TWI624966B - 發光二極體封裝裝置 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
一發光二極體封裝裝置包含一發光元件，一光轉換層，設置於發光元件之上，一封裝層，包覆該光轉換層，一白牆，環繞該封裝層，以及一擴散膜設置於該封裝層與白牆之上。該光轉換層具有一出光面、一相對出光面之一入光面以及一週邊側面，且該入光面面對該發光元件。該白牆環繞該封裝層包覆之光轉換層週邊側面。
Description
本發明係關於一發光二極體封裝裝置，尤其是一含有白牆之發光二極體封裝裝置。
習知發光二極體封裝結構利用藍光晶片搭配陶瓷螢光片、螢光膠片或玻璃螢光片等發光材料達成不同波段的光轉換。螢光片設置在藍光晶片之上，然而，因為螢光片結構與設置位置造成正向〈與螢光片垂直〉與側向〈與螢光片平行〉色溫不同。正向光色溫偏高，側向光色溫偏低，形成常見的發光二極體藍黃圈光源缺陷。藍黃圈雖然可藉由二次光學的設計改善，但是必須針對不同發光二極體結構型態特別設計。因此，由於側向光色溫導致的出光不均勻，為本領域亟需解決的課題。
鑑於上述發光二極體側向光色溫偏差，根據本發明部分實施例提供一種發光二極體封裝裝置包含一發光元件，一光轉換層，設置於發光元件之上，一封裝層，包覆該光轉換層，一白牆，環繞該封裝層，以及一擴散膜設置於
該封裝層與白牆之上。該光轉換層具有一出光面、一相對出光面之一入光面以及一週邊側面，且該入光面面對該發光元件。該白牆環繞該封裝層包覆之光轉換層週邊側面。
藉由設置於環繞側邊的白牆，與光轉換層平行的側向光可被白牆反射，避免色溫偏低的光線散溢，減少出色不均的現象。降低對不同結構的發光二極體封裝裝置設計二次光學的難度，同時提高封裝結構的通用性。
100,200,300,400‧‧‧發光二極體封裝裝置
110,210,310,410‧‧‧發光元件
112,212,312,412‧‧‧導線
114,214,314,414‧‧‧封裝杯
120,220,320,420‧‧‧光轉換層
122,222,322,422‧‧‧出光面
124,224,324,424‧‧‧入光面
126,226,326,426‧‧‧週邊側面
140,240,340,440‧‧‧白牆
230,330,430‧‧‧封裝層
350‧‧‧擴散層
本發明之上述和其他態樣以及特徵請參照說明書內容並配合附加圖式得到更清楚的了解，其中：〔第1圖〕係依照本發明之一實施方式的一發光二極體封裝裝置剖面圖；〔第2圖〕係依照本發明之一實施方式的一發光二極體封裝裝置剖面圖；〔第3圖〕係依照本發明之一實施方式的一發光二極體封裝裝置剖面圖；以及〔第4圖〕係依照本發明之一實施方式的一發光二極體封裝裝置剖面圖。
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下
所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說明。在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。
請參考第1圖。第1圖係依照本發明之一實施方式的發光二極體封裝裝置100剖面圖。發光二極體封裝裝置100包含一發光元件110、導線112、封裝杯114、光轉換層120以及白牆140。發光元件110為一發光二極體，可以為例如水平式晶片、垂直式晶片、倒裝晶片〈flip chip〉、板面晶片〈COB,chip on board〉等。發光二極體透過導線112或其他電性聯結方式在晶片上達成電性連結。該發光元件110可以是一有機發光二極體。
封裝杯114為一半開放式承載元件，發光元件110設置在封裝杯114之平坦底部，封裝杯114之側壁斜向向遠離發光元件110的方向擴張，形成的開口截面積較底部更為寬廣。光轉換層120設置在封裝杯114之上，光轉換層120具有一出光面122、一相對出光面122之入光面124以及一連接上入光面之週邊側面126，光轉換層120之入光面124面對發光二極體的發光面。光轉換層120具有光轉換能力之發光材料，無機發光材料例如：LuYAG、GaYAG、YAG、矽酸鹽、硫化物或氮化物等。有機發光材料可以為具有下列一個或一個以上基團的化合物，例如：二萘嵌苯〈perylene〉、苯井咪唑〈benzimidazole〉、萘
〈naphthalene〉、蔥〈anthracene〉、菲〈phenanthrene〉、茀〈fluorene〉、9-茀〈9-fluorene〉、二亞苯亞胺〈carbazole〉、戊二醯亞胺〈glutarimide〉、1,3-二苯氧基苯〈1,3-diphenylbenzene〉、苯并芘〈benzopyrene〉、芘〈pyrene〉、砒啶〈pyridine〉、聚塞吩〈thiophene〉以及2,3-二氫-1H-苯並異喹啉-1,3-二酮〈2,3-dihydro-1H-benzo[de]isoqunoline-1,3-dione〉。光轉換層120還可包含量子點〈quantum dots,QDs〉。光轉換層120將封裝杯114之開口封閉，形成一個由封裝杯114與光轉換層120界定的密閉空間，根據本發明部分實施例，密閉空間內不填充其他物質，但也可以填充高分子膠材，例如環氧樹脂〈epoxy〉以及矽等。發光元件110發出的光源經過此一密閉空間，經過光轉換層120再由出光面122發散。
根據本發明部分實施例，發光二極體封裝裝置100的白牆140形成於光轉換層120之週邊側面126，環繞光轉換層120，白牆140之高度與光轉換層120的厚度相同。白牆140為具有光反射性質且不漏光之材料，例如玻璃、石英、光反射貼片以及高分子塑料。高分子塑料可以為下列一個或一個以上的組合，例如聚甲基丙烯酸甲脂〈poly(methyl methacrylate),PMMA〉、乙烯對苯二甲酸酯〈polyethylene terephthalate,PET〉、聚苯乙烯〈polystyrene,PS〉、聚乙烯〈polypropylene,PP〉、尼龍〈polyamide,PA〉、聚碳酸酯〈polycarbonate,PC〉、
環氧樹脂〈epoxy〉以及矽等。白牆140的光反射能力可以藉由添加其他填充粒子而改變。填充粒子可以具有不同粒徑或不同材質的複合材料。填充粒子的材料可以為例如二氧化鈦〈TiO2〉、二氧化矽〈SiO2〉、三氧化二鋁〈Al2O3〉、氮化硼〈BN〉、氧化鋅〈ZnO〉等。
當發光二極體發出光源，光線傳導路徑經過密閉空間再到光轉換層120。如先前所述，光線傳導路徑分歧，一部分光線垂直於光轉換層120，自出光面122射出，一部分光線透過與光轉換層120之夾角小於90°的角度射出，而另外一部分光線朝向光轉換層120之週邊側面126傳導。朝向光轉換層120之週邊側面126發散之光線，因為白牆140的遮蔽、反射效果，與光轉換層120幾近平行的光線〈側向光〉將被白牆140反彈，防止色溫偏差的光線散溢，使得由發光二極體封裝裝置100射出的光線角度與光轉換層120垂直或接近垂直。藉由白牆140的設置，避免因為側向光色溫不同，導致出色有漸層色差，例如藍黃圈的現象。
請參考第2圖。第2圖係依照本發明之一實施方式的發光二極體封裝裝置200剖面圖。發光二極體封裝裝置200包含一發光元件210、導線212、封裝杯214、光轉換層220、封裝層230以及白牆240。發光元件210可為發光二極體，透過導線212或其他聯結方式在晶片上達成電性連結。
發光二極體封裝裝置200之發光元件210設置在封裝杯214的平坦底部。發光二極體封裝裝置100與200不同之處在於，發光二極體封裝裝置200還包含一封裝層
230。如第2圖所示，封裝層230包覆光轉換層220的上入光面222、224以及週邊側面226，封裝杯214的開口由包覆光轉換層220的封裝層230密封。白牆240設置在封裝層230兩側，白牆240的高度等同於封裝層230與光轉換層220兩者的合併厚度，白牆240與封裝層230接觸，但其設置位置仍相對應於光轉換層220週邊側面226。
當發光二極體發出光源，光線傳導路徑經過密閉空間，先穿越封裝層230，接著經過光轉換層220。一部分光線垂直於光轉換層220，自出光面222射出，一部分光線透過與光轉換層220之夾角小於90°的角度射出，而另外一部分光線朝向光轉換層220之週邊側面226傳導。因為白牆240的遮蔽、反射效果，與光轉換層220幾近平行的光線〈側向光〉被白牆240反彈，防止色溫偏差的光線散溢，使得發光二極體封裝裝置200射出的光線色溫接近，色溫較為偏差的側向光則藉由白牆240的設置被阻擋，避免出光不均勻的現象。
請參考第3圖。第3圖係依照本發明之一實施方式的發光二極體封裝裝置300剖面圖。發光二極體封裝裝置300包含一發光元件310、導線312、封裝杯314、光轉換層320、封裝層330、白牆340以及擴散層350。發光元件310可為發光二極體，透過導線312或其他聯結方式在晶片上達成電性連結。
發光二極體封裝裝置300之發光元件310設置在封裝杯314的平坦底部。發光二極體封裝裝置300與200
不同之處在於，發光二極體封裝裝置300還包含一擴散層350。如第3圖所示，封裝杯314的開口由包覆光轉換層320的封裝層330密封。白牆340設置在封裝層330兩側，相對應於光轉換層320的週邊側面326，白牆340的高度等同於封裝層330與光轉換層320兩者的合併厚度。白牆340以及封裝層330兩者共平面，擴散層350設置於白牆340以及封裝層330共同形成的平坦介面上。擴散層350具有改變光路徑能力，擴散層350透過塗佈或是貼合的方式形成在白牆340以及封裝層330之上。擴散層350的材料可以是含有填充粒子的高分子材料。高分子材料可以為具有透光性的材料例如：聚甲基丙烯酸甲脂、乙烯對苯二甲酸酯、聚苯乙烯、聚乙烯、尼龍、聚碳酸酯、環氧樹脂以及矽等。填充粒子之材料可以為，例如二氧化鈦、二氧化矽、三氧化二鋁、氮化硼、氧化鋅等。填充粒子可以為包含一或一個以上不同化合物所組成之複合材料，且粒徑大小可以不同。
當發光二極體發出光源，光線傳導路徑經過密閉空間，穿越封裝層330，接著經過光轉換層320入光面324。一部分光線垂直於光轉換層320，經過出光面322、封裝層330，最後經由擴散層350射出，一部分光線透過與光轉換層320之夾角小於90°的角度射出，而另外一部分光線朝向光轉換層320之週邊側面326傳導。因為白牆340的遮蔽、反射效果，側向光被白牆340反彈，防止色溫偏差的光線散溢，使得發光二極體封裝裝置300射出的光線色溫接近，色溫偏差的側向光藉由白牆340的設置被阻擋，其他正
向光線還經過擴散層350修飾再發散，減少光源因色溫造成的色差，使得光源漸層現象減少。
請參考第4圖。第4圖係依照本發明之一實施方式的發光二極體封裝裝置400剖面圖。發光二極體封裝裝置400包含一發光元件410、導線412、封裝杯414、光轉換層420、封裝層430以及白牆440。發光元件410可為發光二極體，透過導線412或其他聯結方式在晶片上達成電性連結。
發光二極體封裝裝置400之發光元件410設置在封裝杯414的平坦底部。發光二極體封裝裝置400與200不同之處在於，發光二極體封裝裝置400之封裝層430設置於光轉換層420的入光面424，並沒有包覆光轉換層420。如第4圖所示，封裝杯414的開口由封裝層430密封，光轉換層420設置在封裝層430之上，光轉換層420透過入光面424與封裝層430接觸，光轉換層420之出光面422不受封裝層430包覆。白牆440設置在光轉換層420之週邊側面426以及封裝層430兩側，白牆440的高度等同於封裝層430與光轉換層420兩者的合併厚度，且與光轉換層420的出光面422共平面。
當發光二極體發出光源，光線傳導路徑經過密閉空間，穿越封裝層430，接著經過光轉換層420入光面424。一部分光線垂直於光轉換層420，經過出光面422射出。一部分光線透過與封裝層430以及光轉換層420之夾角小於90°的角度射出，而另外一部分光線朝向光轉換層420之週邊側面426以及與封裝層430接近平行的方向傳導。因
為白牆440的遮蔽、反射效果，側向光被白牆440反彈，防止在封裝層430以及光轉換層420橫向進行的光線散溢，使得發光二極體封裝裝置400射出的光線色溫接近，色溫偏差減少，使得光源漸層現象減少。
根據本發明部分實施例，藉由設置於環繞側邊的白牆，與光轉換層或封裝層平行的側向光可被白牆反射，避免色溫偏低的光線散溢，減少出色不均的現象，還可增加一擴散層在光轉換層之上，透過擴散層的光學特性，微調射出光的光學效果。白牆的設置可以應用於不同結構的發光二極體封裝裝置，降低設計二次光學的難度，同時提高封裝結構的通用性。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
Claims (10)
- 一種發光二極體封裝裝置，包含：一封裝杯，具有一底部及一側壁，該側壁設置於該底部上並環繞該底部之一邊緣以定義出一開口，其中該側壁具有一頂表面；一發光元件，設置於該封裝杯之該開口內；一擴散膜，設置於該封裝杯上；以及一光轉換部件，設置於該側壁之該頂表面上，並夾置於該封裝杯與該擴散膜之間，該光轉換部件包含：一光轉換層；一封裝層，包覆該光轉換層；以及一白牆，環繞該封裝層。
- 如請求項1所述之發光二極體封裝裝置，其中該光轉換層具有一出光面、一相對於出光面之一入光面以及一週邊側面，且該入光面面對該發光元件。
- 如請求項2所述之發光二極體封裝裝置，其中該封裝層係包覆該光轉換層之出光面、入光面以及週邊側面。
- 如請求項3所述之發光二極體封裝裝置，其中該白牆環繞該封裝層包覆之光轉換層週邊側 面。
- 如請求項2所述之發光二極體封裝裝置，其中該封裝層係包覆該光轉換層之入光面。
- 如請求項5所述之發光二極體封裝裝置，其中該白牆係環繞該封裝層以及該光轉換層之週邊側面。
- 如請求項1所述之發光二極體封裝裝置，其中該光轉換層包含量子點〈quantum dots,QDs〉發光材料。
- 如請求項1所述之發光二極體封裝裝置，其中該白牆之材料係選自玻璃、石英、光反射貼片、高分子塑料及其組合。
- 如請求項1所述之發光二極體封裝裝置，其中該發光元件係指一發光二極體。
- 如請求項9所述之發光二極體封裝裝置，其中該發光二極體係指一板面晶片〈COB〉。
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| TWM448063U (zh) * | 2012-09-06 | 2013-03-01 | Chi Lin Technology Co Ltd | 發光裝置 |
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| TWM448063U (zh) * | 2012-09-06 | 2013-03-01 | Chi Lin Technology Co Ltd | 發光裝置 |
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