TWI623995B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI623995B
TWI623995B TW105106349A TW105106349A TWI623995B TW I623995 B TWI623995 B TW I623995B TW 105106349 A TW105106349 A TW 105106349A TW 105106349 A TW105106349 A TW 105106349A TW I623995 B TWI623995 B TW I623995B
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semiconductor wafer
substrate
semiconductor device
manufacturing
tape
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TW105106349A
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TW201709381A (zh
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Jun Tanaka
Masaya Shima
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Toshiba Memory Corp
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Publication of TW201709381A publication Critical patent/TW201709381A/zh
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Publication of TWI623995B publication Critical patent/TWI623995B/zh

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Abstract

本發明之實施形態使半導體裝置之製造容易。
本實施形態之半導體裝置之製造裝置具有：載台，其保持與具有第一面及與上述第一面相反側之第二面之半導體晶圓之上述第二面附著之帶；真空機構，其吸附於基板之上方，該基板附著設置於上述第一面；驅動部，其將上述真空機構向遠離上述基板之方向驅動；以及冷卻部，其能冷卻上述帶。又，本實施形態之半導體裝置之製造方法包括：對具有第一面及與上述第一面對向之第二面之半導體晶圓，將基板黏貼於上述第一面之步驟；貫通上述半導體晶圓，於上述第二面形成具有凸部之接點之步驟；將帶貼附於上述第二面之步驟；及藉由使上述帶之彈性模數增加，並拉開上述半導體晶圓與上述基板之距離，而將上述基板剝離之剝離步驟。

Description

半導體裝置之製造方法
[相關申請案]
本申請案享有以日本專利申請案2015-86155號(申請日：2015年4月20日)為基礎申請案之優先權。本申請案藉由參照該基礎申請案而包含基礎申請案之全部內容。
本發明之實施形態係關於一種半導體裝置之製造裝置及製造方法。
半導體晶圓被單片化為半導體晶片。
本發明之實施形態提供一種使半導體裝置之製造容易之半導體裝置之製造裝置及製造方法。
本實施形態之半導體裝置之製造裝置具有：載台，其保持與具有第一面及與上述第一面相反側之第二面之半導體晶圓之上述第二面附著之帶；真空機構，其吸附於基板之上方，該基板附著設置於上述第一面；驅動部，其將上述真空機構向遠離上述基板之方向驅動；以及冷卻部，其能夠冷卻上述帶。又，本實施形態之半導體裝置之製造方法包括：對具有第一面及與上述第一面對向之第二面之半導體晶圓，將基板黏貼於上述第一面之步驟；貫通上述半導體晶圓，於上述第二面形成具有凸部之接點之步驟；將帶貼附於上述第二面之步驟；以及藉由使上述帶之彈性模數增加，並拉開上述半導體晶圓與上述基 板之距離，而將上述基板剝離之剝離步驟。
10‧‧‧半導體晶圓
10'‧‧‧半導體晶圓
10a‧‧‧第一面
10b‧‧‧第二面
10b'‧‧‧第二面
20‧‧‧基板
30‧‧‧接著材層
31‧‧‧焊接凸塊
32‧‧‧導電層
33‧‧‧接點
34‧‧‧絕緣膜
35‧‧‧配線層
36‧‧‧絕緣層
37‧‧‧電極
38‧‧‧接觸孔
40‧‧‧槽
50‧‧‧半導體晶片
55‧‧‧晶片
60‧‧‧輥
80‧‧‧第一帶
90‧‧‧第一支撐環
91‧‧‧載台
92‧‧‧冷卻管
93‧‧‧冷卻機構
94‧‧‧真空泵
95‧‧‧配管
96‧‧‧載台槽
97‧‧‧吸附機構
100‧‧‧剝離部
101‧‧‧第二驅動部
103‧‧‧治具
104‧‧‧第一驅動部
110‧‧‧第二支撐環
120‧‧‧第二帶
140‧‧‧吸附吸嘴
150‧‧‧拾取機構
200‧‧‧紫外線照射裝置
210‧‧‧紫外線
S1‧‧‧區域
S2‧‧‧區域
S3‧‧‧區域
圖1係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖2係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖3係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖4係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖5係將圖4之區域S1放大之模式性之剖視圖。
圖6係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖7係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖8係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖9係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖10係將圖9之區域S2放大之模式性之剖視圖。
圖11係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖12係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖13係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖14係將圖13之區域S3放大之模式性之剖視圖。
圖15係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖16係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖17係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之立體圖。
圖18係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖19係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖20係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖21係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖22係說明第一實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
圖23係與第一帶相接之載台之溫度與彈性模數之關係。
圖24係說明第二實施形態之半導體裝置之製造裝置及半導體製造方法之模式性之剖視圖。
以下，參照附圖對實施形態進行說明。於以下之說明中，對於大致相同之構成要素標註相同符號。
(第1實施形態)
圖1~圖22係說明第一實施形態之半導體裝置之製造裝置及製造方法之圖。
如圖1及圖2所示，於半導體晶圓10之第一面10a側，設置接著材層30。於接著材層30上設置基板20。再者，如下所述，於半導體晶圓10與接著材層30之間配置絕緣層36，但於圖1及圖2中，省略了關於絕緣層36之圖示。
半導體晶圓10具有第一面10a及第二面10b。第一面10a為形成有NAND元件、電晶體、配線等(未圖示)之元件面。第二面10b為第一面10a之相反側之面。
接著材層30藉由塗佈或貼附於第一面10a側而形成。接著材層30具有芳香族烴樹脂、熱可塑樹脂、矽酮樹脂、熱硬化樹脂、或該等之積層膜等。接著材層30之厚度例如為30~60μm左右。基板20使用半導體基板或其以外之各種基板。基板20之厚度典型而言為600μm~800μm左右。
如圖3及圖4所示，半導體晶圓10、接著材層30、及基板20被上下反轉。然後，藉由將第二面10b研削，而將半導體晶圓10薄膜化。第二面10b'為將第二面10b薄膜化之後之面。薄膜化後之半導體晶圓10'之厚度，典型而言為30~50μm。進而，自第二面10b'貫通至第一面10a形成接點33。
圖5係圖4之區域S1之放大圖，係接點33之放大圖。
接點33具有導電層32及焊接凸塊31。導電層32貫通半導體晶圓10'而設置。導電層32與設置於半導體晶圓10'之第一面10a之配線層35等連接，並且與設置於第二面10b'側之焊接凸塊31連接。導電層32包含複數個例如銅、鎳、鈦、氮化鈦等導電體，亦可為該等膜之積層膜。焊接凸塊31與導電層32連接而配置。而且，至少焊接凸塊31係相對於第二面10b'朝向外側突出而配置。即，焊接凸塊31具有自第二面10b'突出之部分，且自第二面10b'配置為凸形狀。因此，接點33自半導體晶圓10'之第二面10b'之表面突出而配置為凸形狀。
配線層35配置於半導體晶圓10'之第一面10a側。配線層35亦可具有複數個配線及複數個接點。絕緣層36配置於配線層35之周圍。電極37與配線層35連接，且配置於第一面10a之外側。
接點33之形成方法例如如下所述。
接觸孔38係利用例如微影法之遮罩圖案之形成、及RIE(Reactive Ion Etching，反應性離子蝕刻)，將半導體晶圓10'及絕緣層36蝕刻加工而形成。接觸孔38例如到達配線層35而形成。配線層35中係至少接觸孔38到達之部分例如使用鎢、銅或金屬矽化物。鎢或金屬矽化物係相對於半導體晶圓10易使RIE之蝕刻之選擇比變低。因此，能夠精度良好地形成接觸孔38。接著，使矽氧化物等之絕緣膜34成膜。於覆蓋配線層35形成絕緣膜34之情形時，將覆蓋配線層35之絕緣膜34去除。
然後，利用金屬鍍敷法或濺鍍法形成導電層32。導電層32例如利用微影與RIE而圖案化。接著，於導電層32上形成焊料層。藉由將焊料層利用加熱回焊，而形成焊接凸塊31。
再者，於圖3中，為方便起見省略了接點33，於以後之附圖中只要未特別說明之情形，亦為方便起見省略接點33之記載。
如圖6及圖7所示，於半導體晶圓10'形成槽40，而單片化成複數個半導體晶片50及缺角晶片55。此處，半導體晶片50係指作為半導體裝置之製品而出貨之晶片，缺角晶片55係指不作為半導體裝置之製品而出貨之晶片。例如，藉由將半導體晶圓10'切割加工，而形成槽40。槽40到達接著材層30而設置。由於半導體晶片50及缺角晶片55係利用接著材層30貼附，故不會離散。於以下之說明中，為方便起見將複數個半導體晶片50及缺角晶片55之集合體繼續稱為半導體晶圓10'。再者，未必有將半導體晶圓10'單片化為半導體晶片50及缺角晶片55之必要。於該情形時，只要於下述拾取之時間點之前單片化即可。
如圖8及圖9所示，於半導體晶圓10'之周圍，配置第一支撐環90。然後，將第一帶80使用輥60接著於半導體晶圓10'之第二面10b'、第一支撐環90。
第一帶80例如使用聚對苯二甲酸乙二酯、聚烯烴、環氧樹脂、聚醯亞胺、丙烯酸樹脂、矽酮樹脂之膜、或該等之積層膜等。第一帶80之厚度典型而言為100μm~300μm。
圖10係圖9之區域S2之放大圖，係貼附第一帶80之中途之接點33附近之放大圖。
如上所述，半導體晶圓10'具有接點33。如上所述，接點33於第二面10b'上具有凸形狀即突出之部分。又，若於貼附第一帶80時，於第一帶80與第二面10b'之間存在多數間隙，則存在下述接著材層30之去除時之藥液處理中於第一帶80與第二面10b之間隙殘留藥液或溶解於藥液中之接著材層30之可能性。又，若於第一帶80與第二面10b之間存在間隙，則存在第一帶80與半導體晶圓10之接著力變低，而於下述將基板20剝離之步驟中半導體晶圓10'自第一帶80剝離之可能性。因此，較理想的是於第一帶80與第二面10b'之間儘量無間隙地密接貼附。
於貼附時，一面對第一帶80施加張力一面貼附。而且，為了無間隙地貼附第一帶80，較理想的是變形較少。即，較理想的是第一帶80之彈性模數較小。
圖11及圖12係表示於貼附了第一帶80之後，上下反轉之狀態之模式性之圖。
如圖13及圖14所示，將第一帶80自半導體晶圓10'剝離。圖14係圖13之區域S3之模式性之放大圖。
第一帶80及半導體晶圓10'等配置於載台91上。載台91例如具有經由配管95而連接於真空泵94之載台槽96。真空泵94經由配管95，自 載台槽96抽吸，藉此保持載台91上之第一帶80等。即，載台91具有保持機構。而且，載台91經由第一帶80，而保持半導體晶圓10'、接著材層30。
載台91具有冷卻管92，且利用於冷卻管92中流通之冷媒而被冷卻。藉此，第一帶80或載台91例如被冷卻於-15度至5度或10度之範圍。藉由被冷卻，如下所述，第一帶80變得不易變形。具體而言，第一帶80之彈性模數成為0.1MPa以上。
冷卻管92例如配置於載台91之內部或下方。冷卻管92與冷卻機構93連接。冷卻機構93例如將氟氯碳化物等冷媒壓縮，使冷媒液化。然後，例如，藉由於冷卻管92中使冷媒汽化，而產生潛熱，使得載台91被冷卻。
再者，上述冷卻管92及冷卻機構93為一例，能夠使用任意之冷卻機構。例如，亦可不設置冷卻管92而利用冷卻機構93直接冷卻。亦可於冷卻管92中流通與冷卻機構93之內部所使用之冷媒不同之冷媒。冷媒並不限定於氟氯碳化物，亦可為任意之冷媒，例如亦可為代替氟氯碳化物等。又，亦可為不使用冷媒而使用珀爾貼元件等之冷卻方法。
於第一帶80被冷卻之狀態下，如下所述，將第一帶80剝離。
於基板20之上表面，接著有具備吸附機構97之剝離部100。吸附機構97例如包含與真空裝置等真空泵連接之槽或孔。剝離部100例如利用包含馬達等之第二驅動部101能夠向特定之方向移動。藉由剝離部100將基板20提拉，而將基板20自接著材層30剝離。或者，接著材層30於基板20與半導體晶圓10'之間伸展。換言之，剝離部100藉由擴大基板20與載台91之間之距離而將基板20剝離。
進而，於基板20及接著材層30之交界插入前端部較細地設置之治具103。治具103例如利用包含馬達等之第一驅動部104，能夠沿著 接著材層30而移動。
藉由插入治具103，進而，基板20自接著材層30剝離。即，治具103之至少前端部對基板20施加向上之力。基板20自接著材層30逐漸剝離。若換個別的說法，治具103係藉由擴大基板20與載台91之間之距離而將基板20剝離。再者，治具103亦可將於基板20與半導體晶圓10'之間伸展之接著材層30切斷。
又，亦可於基板20之背面附著接著材層30之一部分。進而，第一驅動部104、第二驅動部101亦可均具有複數個馬達。
圖15及圖16係表示剝離了第一帶80之狀態之模式性之圖。
如圖17及圖18所示，利用溶劑等而將接著材層30剝離。接著材層30例如利用藥液處理等而剝離。如上所述，存在該接著材層30之去除時之藥液於與第二面10b之間隙殘留藥液或溶解於藥液中之接著材層30之可能性。又，若於第一帶80與第二面10b存在間隙，則存在第一帶與半導體晶圓10之接著力變低，而於下述之將基板20剝離之步驟中半導體晶圓10自第一帶剝離之可能性。因此，較理想的是於第一帶80與第二面10b'之間儘量不存在間隙。
如圖19所示，第一帶80於半導體晶圓10'與第一支撐環90之間之區域被切斷。被切斷之第一帶之80之一部分與第一支撐環90被卸除。
如圖20所示，將半導體晶圓10'等上下反轉。於半導體晶圓10'之周圍配置第二支撐環110。而且，於半導體晶圓10'、第二支撐環110之上表面接著第二帶120。
如圖21所示，將半導體晶圓10'等上下反轉。然後，將第一帶80剝離。半導體晶圓10'隔著第二帶120貼附於第二支撐環110。因此，第一帶80能夠剝離。
如圖22所示，自半導體晶圓10'，將半導體晶片50例如利用具備吸附吸嘴140之拾取機構150拾取，並向對基板或其他半導體晶片安裝 之步驟等半導體裝置之特定製造步驟搬送。再者，於半導體晶圓10'未被單片化為半導體晶片之情形時，只要於拾取之前，利用研磨、擴展、切割等任意之方法單片化為半導體晶片即可。
(關於本實施形態之效果)
根據本實施形態，於將至少第一帶80之至少剝離部位冷卻之載台冷卻為-15度至5度或10度之範圍之狀態下，將基板20剝離。尤其為載台被冷卻為5度以下之狀態，則更加理想。藉由將第一帶80冷卻，能夠容易地將基板20剝離。
以下，就該理由進行說明。如圖14中所說明，基板20自剝離部100及治具103被施加向上之力。然後，該向上之力經由與基板20接著之接著材層30及半導體晶圓10'，亦施加至第一帶80。
假設，將第一帶80容易伸縮之情況作為比較例進行研究。若第一帶80因向上之力而伸展，則施加至基板20之向上之力因第一帶80伸展而削弱。即，施加至基板20之力中施加至基板20與接著材層30之間之力變小。
相對於此，根據本實施形態，將第一帶80冷卻至例如10度以下或5度以下。而且，第一帶80藉由冷卻難以伸縮。即，施加至基板20之力充分施加至基板20與接著材層30之間。
尤其，相對於接著材層30之厚度為30~50μm，半導體晶圓10'之厚度為30~50μm，而第一帶80之厚度為100~200μm。即，第一帶80較接著材層30之厚度厚，甚至較接著材層30之厚度與半導體晶片50之厚度之和更厚。因此，於第一帶80伸展之情形時，自治具103施加之力中被削弱之比例變大。即，藉由提高上述彈性模數來抑制伸縮之效果大。
圖23係表示3種第一帶80之溫度與彈性模數之關係之曲線圖。圖23之橫軸為與第一帶80相接之載台之溫度，縱軸表示第一帶80之彈性 模數。如圖23所示，只要第一帶80為上文所述之材料，則於10度以下彈性模數變大。尤其，於5度以下彈性模數變大。第一帶80之彈性模數大意味著第一帶80不易伸展。即，根據本實施形態，能夠將基板20自接著材層30容易地剝離。再者，第一帶80即便不為上文所述之材料，只要為於10度以下彈性模數變大之類似之材料即可。
進而，根據本實施形態，於將第一帶80接著時，由於彈性模數較低，故與設置於半導體晶片50之接點33中所包含之焊接凸塊31之階差無關，容易使間隙較少地接著。
若於第一帶80與半導體晶圓10'之間存在間隙，則存在將接著材層30剝離時之藥液進入至間隙之可能性。即，存在第一帶80因將接著材層30剝離之藥液而剝離之可能性。根據本實施形態，亦能夠避免此種不良情況。
(第二實施形態)
第二實施形態與第一實施形態於第一帶之彈性模數之上升之方法上不同。即，於第二實施形態中，藉由對第一帶80照射紫外線(光)，而使彈性模數變大。
如圖24所示，第一帶80被紫外線照射裝置200照射紫外線210。藉由照射紫外線210，而第一帶80之彈性模數變大。
紫外線照射裝置200自第一帶80之下方即剝離部100之相反側照射。紫外線照射裝置200例如為鹵素燈或水銀燈等。
再者，於本實施形態中，以紫外線為例進行了說明，但並不限定於此，只要第一帶80之彈性模數變大，亦可為可見光或紅外光。
對本發明之實施形態進行了說明，但本實施形態係作為示例而提出，並不意圖限定發明之範圍。該等新穎之實施形態能夠以其他各種形態實施，於不脫離發明之主旨之範圍內，能夠進行各種省略、替換、變更。本實施形態或其變化包含於發明之範圍或主旨中，並且包 含於申請專利範圍所記載之發明與其均等之範圍中。

Claims (9)

  1. 一種半導體裝置之製造方法，其包括：對具有第一面及與上述第一面對向之第二面之半導體晶圓，介由黏著劑層將基板黏貼於上述第一面之步驟；貫通上述半導體晶圓，於上述第二面形成包含凸部之接點之步驟；將帶貼附於上述第二面之步驟，上述帶具有大於上述半導體晶圓之膜厚與上述黏著劑層之膜厚之和的膜厚；使上述帶之彈性模數增加之步驟；及於使上述帶之彈性模數增加之步驟之後，從上述半導體晶圓將上述基板剝離之剝離步驟。
  2. 如請求項1之半導體裝置之製造方法，其中於黏貼上述基板之步驟之前，進而包含於上述半導體晶圓之上述第一面側形成配線層、及覆蓋上述配線層而配置之絕緣層之步驟；且上述接點與上述配線層連接。
  3. 如請求項1之半導體裝置之製造方法，其中使上述帶之彈性模數增加之步驟係使保持上述帶之載台冷卻。
  4. 如請求項3之半導體裝置之製造方法，其中藉由上述冷卻，上述載台被冷卻至-15度至10度之範圍。
  5. 如請求項1之半導體裝置之製造方法，其中使上述帶之彈性模數增加之步驟係對上述帶照射紫外線。
  6. 如請求項1之半導體裝置之製造方法，其中使上述帶之彈性模數增加之步驟係使上述帶之上述彈性模數增加至0.1MPa以上。
  7. 如請求項1之半導體裝置之製造方法，其中上述剝離步驟係使用：於上述基板之上方吸附之真空裝置、及能於上述基板與上述半導體晶圓之間插入其前端部之治具。
  8. 如請求項1之半導體裝置之製造方法，其中上述帶包含具有根據其溫度而變化之彈性模數的材料。
  9. 如請求項1之半導體裝置之製造方法，其進而包含：從上述半導體晶圓將上述基板分離前，研削上述半導體晶圓之表面。
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