TWI621907B - 光罩、光罩之製造方法、光罩基底及顯示裝置之製造方法 - Google Patents
光罩、光罩之製造方法、光罩基底及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI621907B TWI621907B TW104118949A TW104118949A TWI621907B TW I621907 B TWI621907 B TW I621907B TW 104118949 A TW104118949 A TW 104118949A TW 104118949 A TW104118949 A TW 104118949A TW I621907 B TWI621907 B TW I621907B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- photomask
- transmissive film
- semi
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 238000012546 transfer Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000002834 transmittance Methods 0.000 claims abstract description 64
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 27
- 230000010363 phase shift Effects 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- -1 oxynitrides Chemical class 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 152
- 230000000052 comparative effect Effects 0.000 description 26
- 230000000694 effects Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000013041 optical simulation Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014146847A JP6581759B2 (ja) | 2014-07-17 | 2014-07-17 | フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法 |
| JP2014-146847 | 2014-07-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201604643A TW201604643A (zh) | 2016-02-01 |
| TWI621907B true TWI621907B (zh) | 2018-04-21 |
Family
ID=55247536
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104118949A TWI621907B (zh) | 2014-07-17 | 2015-06-11 | 光罩、光罩之製造方法、光罩基底及顯示裝置之製造方法 |
| TW108100864A TWI690770B (zh) | 2014-07-17 | 2015-06-11 | 光罩及顯示裝置之製造方法 |
| TW107103718A TWI651585B (zh) | 2014-07-17 | 2015-06-11 | 光罩及顯示裝置之製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108100864A TWI690770B (zh) | 2014-07-17 | 2015-06-11 | 光罩及顯示裝置之製造方法 |
| TW107103718A TWI651585B (zh) | 2014-07-17 | 2015-06-11 | 光罩及顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6581759B2 (fr) |
| KR (3) | KR101837247B1 (fr) |
| CN (2) | CN105319831B (fr) |
| TW (3) | TWI621907B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI777402B (zh) * | 2017-03-10 | 2022-09-11 | 日商Ｈｏｙａ股份有限公司 | 顯示裝置製造用光罩、及顯示裝置之製造方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6259509B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
| JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| JP6964029B2 (ja) * | 2017-06-06 | 2021-11-10 | Hoya株式会社 | フォトマスク、及び、表示装置の製造方法 |
| TWI659262B (zh) | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
| TWI691608B (zh) | 2017-09-12 | 2020-04-21 | 日商Ｈｏｙａ股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
| JP7383490B2 (ja) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | フォトマスク |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306547B1 (en) * | 1998-12-16 | 2001-10-23 | Sharp Kabushiki Kaisha | Photomask and manufacturing method thereof, and exposure method using the photomask |
| TW200732832A (en) * | 2006-02-15 | 2007-09-01 | Hoya Corp | Mask blank and photomask |
| US20110183240A1 (en) * | 2009-12-21 | 2011-07-28 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method |
| TW201400977A (zh) * | 2012-06-01 | 2014-01-01 | Hoya Corp | 光罩、光罩之製造方法及圖案之轉印方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315845A (ja) | 1989-06-14 | 1991-01-24 | Hitachi Ltd | マスク及びマスク作製方法 |
| JP3225535B2 (ja) * | 1991-04-26 | 2001-11-05 | ソニー株式会社 | 位相シフトマスク |
| JPH0683031A (ja) * | 1992-08-31 | 1994-03-25 | Sony Corp | 露光マスク形成方法 |
| JPH0695360A (ja) * | 1992-09-10 | 1994-04-08 | Fujitsu Ltd | 光学マスク |
| JP3353124B2 (ja) * | 1992-11-27 | 2002-12-03 | 大日本印刷株式会社 | 位相シフトフォトマスク |
| JPH0764274A (ja) * | 1993-08-30 | 1995-03-10 | Sony Corp | 位相シフトマスク及びその製造方法 |
| JP2000019710A (ja) * | 1998-07-07 | 2000-01-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2002323746A (ja) * | 2001-04-24 | 2002-11-08 | Matsushita Electric Ind Co Ltd | 位相シフトマスク及び、それを用いたホールパターン形成方法 |
| US7147975B2 (en) * | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
| JP3746497B2 (ja) * | 2003-06-24 | 2006-02-15 | 松下電器産業株式会社 | フォトマスク |
| JP4684584B2 (ja) * | 2003-07-23 | 2011-05-18 | キヤノン株式会社 | マスク及びその製造方法、並びに、露光方法 |
| JP2005150494A (ja) * | 2003-11-18 | 2005-06-09 | Sony Corp | 半導体装置の製造方法 |
| JP4645076B2 (ja) * | 2004-06-28 | 2011-03-09 | 凸版印刷株式会社 | 位相シフトマスクおよびその製造方法およびパターン転写方法 |
| JP3971775B2 (ja) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | フォトマスク |
| JP3971774B2 (ja) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | パターン形成方法 |
| JP6186719B2 (ja) | 2011-12-21 | 2017-08-30 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
| JP6139826B2 (ja) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| JP6081716B2 (ja) * | 2012-05-02 | 2017-02-15 | Hoya株式会社 | フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法 |
| JP5916680B2 (ja) * | 2012-10-25 | 2016-05-11 | Hoya株式会社 | 表示装置製造用フォトマスク、及びパターン転写方法 |
| JP6322250B2 (ja) * | 2016-10-05 | 2018-05-09 | Hoya株式会社 | フォトマスクブランク |
-
2014
- 2014-07-17 JP JP2014146847A patent/JP6581759B2/ja active Active
-
2015
- 2015-06-11 TW TW104118949A patent/TWI621907B/zh active
- 2015-06-11 TW TW108100864A patent/TWI690770B/zh active
- 2015-06-11 TW TW107103718A patent/TWI651585B/zh active
- 2015-07-10 KR KR1020150098602A patent/KR101837247B1/ko active IP Right Grant
- 2015-07-16 CN CN201510418721.9A patent/CN105319831B/zh active Active
- 2015-07-16 CN CN201910982223.5A patent/CN110673436B/zh active Active
-
2017
- 2017-10-11 KR KR1020170129263A patent/KR102168149B1/ko active IP Right Grant
-
2020
- 2020-10-14 KR KR1020200132749A patent/KR102195658B1/ko active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306547B1 (en) * | 1998-12-16 | 2001-10-23 | Sharp Kabushiki Kaisha | Photomask and manufacturing method thereof, and exposure method using the photomask |
| TW200732832A (en) * | 2006-02-15 | 2007-09-01 | Hoya Corp | Mask blank and photomask |
| US20110183240A1 (en) * | 2009-12-21 | 2011-07-28 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method |
| TW201400977A (zh) * | 2012-06-01 | 2014-01-01 | Hoya Corp | 光罩、光罩之製造方法及圖案之轉印方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI777402B (zh) * | 2017-03-10 | 2022-09-11 | 日商Ｈｏｙａ股份有限公司 | 顯示裝置製造用光罩、及顯示裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI651585B (zh) | 2019-02-21 |
| CN105319831A (zh) | 2016-02-10 |
| JP6581759B2 (ja) | 2019-09-25 |
| CN110673436B (zh) | 2023-10-27 |
| KR102195658B1 (ko) | 2020-12-28 |
| TWI690770B (zh) | 2020-04-11 |
| KR20200120599A (ko) | 2020-10-21 |
| TW201816503A (zh) | 2018-05-01 |
| KR101837247B1 (ko) | 2018-03-09 |
| KR20160010322A (ko) | 2016-01-27 |
| TW201921091A (zh) | 2019-06-01 |
| CN110673436A (zh) | 2020-01-10 |
| TW201604643A (zh) | 2016-02-01 |
| CN105319831B (zh) | 2019-11-12 |
| JP2016024264A (ja) | 2016-02-08 |
| KR102168149B1 (ko) | 2020-10-20 |
| KR20170117987A (ko) | 2017-10-24 |
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