TWI621502B - Double chemical mechanical polishing trimming system and method thereof - Google Patents

Abstract

A dual chemical mechanical polishing trimming system for trimming a surface of a polishing pad, the dual chemical mechanical polishing finishing system comprising a first trimmer and a second trimmer, the first trimmer comprising a first base and a plurality of flat abrasive particles disposed on the first base, the second trimmer comprising a second base and a plurality of pointed abrasive particles disposed on the second base, wherein the first trimmer and The second trimmer trims the surface of the polishing pad. The dual chemical mechanical polishing finishing system has both deglazing and roughening characteristics by disposing the pointed abrasive particles and the flat abrasive particles on the first base and the second base, respectively.

Description

Double chemical mechanical polishing trimming system and method thereof

The invention relates to a chemical mechanical polishing finishing system, in particular to a double chemical mechanical polishing finishing system which has both deglazing and roughening.

In the semiconductor wafer manufacturing process, the wafer is polished using a chemical mechanical polish (CMP) process to planarize the surface of the wafer. A common CMP process uses a polishing pad (or polishing pad) attached to a rotating table to contact and apply a wafer to a spin-on carrier. The rotating table will rotate and provide a polishing slurry to the polishing pad. In general, due to the pressure and velocity movement (Preston equation), the high grinding point on the polishing pad will produce a high temperature glazing phenomenon, and the debris caused by the grinding will accumulate in the holes in the polishing pad, causing it to crystallize The round grinding effect is reduced, so a Conditioner is required to remove the glaze spots on the polishing pad and residual debris.

A conventional dresser, such as the Republic of China Patent Publication No. 201043395, filed by the applicant of the present application, discloses a cutting tool having a plurality of cutting tips, including a base and a plurality of individual abrasive grains having a facing and facing a workpiece. a working surface, the abrasive grain is arranged on the working surface of the base, wherein the abrasive grains are separately formed to have a processing top, and the angle of the wedge angle of the top is 30 to 150 degrees, The contact angle of the abrasive particles with the workpiece is 30 to 150 degrees, and the depth of the top piercing workpiece is less than 20%, and the top is respectively connected to the upper end of the crystal face outside the abrasive grains. In order to improve the wear resistance of the cutting tool, the cutting efficiency and the service life can be improved.

In order to improve the quality and efficiency of the trimming, another technique for integrating the two trimmers into a single system is proposed. Referring to the Republic of China Invention Patent Publication No. 201303992, a method for trimming the chemical mechanical polishing pad is proposed, including: a deglazing The trimming device acts on a working surface of a chemical mechanical polishing pad; the glazing trimmer is used to deglaze the working surface of the chemical mechanical polishing pad; and a rough forming trimmer acts on the chemical mechanical polishing pad a working surface; and roughening the working surface of the chemical mechanical polishing pad with the rough forming conditioner. In addition, the US Patent Publication No. US 2006/0194521 proposes a grinding apparatus for grinding a workpiece, the grinding apparatus comprising a polishing table, a top ring and a grinding unit, the surface of the grinding table being provided with a surface for Polishing a polishing pad of a semiconductor wafer, the top ring is pressed by pressing the semiconductor wafer at a predetermined pressure, and the polishing unit includes a diamond dresser and a trimming unit for trimming the polishing pad.

In the above prior art, the Republic of China Patent Publication No. 201043395 discloses that the tops of the abrasive grains are respectively sharp, ribbed, arcuate and platform-shaped, but the abrasive grains of different shapes are formed on the same base. When the grinding is performed, the surface bulging portion of the polishing pad is easily removed immediately, so the trimming ability is limited. The Republic of China Patent Publication No. 201303992 and the US Patent No. US 2006/0194521 both disclose the use of two dressers for trimming, but they do not have a more detailed definition of the abrasive grain structure design therein, so it is difficult to achieve It is claimed to have both deglazing and roughening effects. It can be seen from the above that the structural design of the chemical mechanical polishing dresser still needs to be improved.

The main object of the present invention is to solve the problem of the conventional chemical mechanical polishing dresser, which is difficult to combine the functions of deglazing and roughening.

To achieve the above object, the present invention provides a dual chemical mechanical polishing trimming system for trimming a surface of a polishing pad, the dual chemical mechanical polishing finishing system comprising a first trimmer and a second trimmer, the first trimming The device includes a first base and a plurality of flat abrasive particles disposed on the first base, the second trimmer includes a second base and a plurality of pointed abrasive particles disposed on the second base Wherein the first trimmer and the second trimmer trim the surface of the polishing pad.

In an embodiment, the first trimmer further includes a first carrier pillar bonding layer, a first carrier pillar, and a first bonding layer, wherein the first carrier pillar bonding layer is disposed on the plurality of the first pedestal a first accommodating column is disposed on the first carrier column bonding layer and is fixed to the first accommodating groove through the first carrier column bonding layer, and the first bonding layer is disposed on the first accommodating column The flat abrasive particles are disposed on the first bonding layer and are fixed to the first carrier through the first bonding layer.

In an embodiment, the second trimmer further includes a second carrier pillar bonding layer, a second carrier pillar, and a second bonding layer. The second carrier pillar bonding layer is disposed on the plurality of the second pedestal. a second accommodating column is disposed on the second carrier column bonding layer and is fixed to the second accommodating groove through the second carrier column bonding layer, and the second bonding layer is disposed on the second accommodating column The tip abrasive particles are disposed on the second bonding layer and are fixed to the second carrier through the second bonding layer.

In one embodiment, the first trimmer further includes a third bonding layer disposed on a surface of the first pedestal, and the flat abrasive particles are fixed to the first base through the third bonding layer And the first base is a planar substrate.

In an embodiment, the second trimmer further includes a fourth bonding layer disposed on a surface of the second pedestal, and the pointed abrasive particles are fixed to the second through the fourth bonding layer On the pedestal, the second pedestal is a planar substrate.

In one embodiment, the material of the first pedestal is selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

In one embodiment, the material of the second pedestal is selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

In one embodiment, the composition of the first bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the composition of the first carrier pillar bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the composition of the second bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the composition of the second carrier-bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the composition of the third bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the composition of the fourth bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

In one embodiment, the material of the first carrier column is selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

In one embodiment, the material of the second carrier column is selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

In one embodiment, the flat abrasive particles have a negative bevel or a 0 degree angle.

In an embodiment, the negative bevel angle is between 0 degrees and -35 degrees.

To achieve the above object, the present invention further provides a dual chemical mechanical polishing process for trimming a surface of a polishing pad using the dual chemical mechanical polishing process.

The effect of the prior art of the present invention is the same as that of the prior art of the Chinese Patent Publication No. 201043395, No. 201303992, and the US Patent No. US 2006/0194521. In the present invention, the flat-head abrasive particles of the first dresser Used to provide the functions of triming and deglazing to level the surface of the polishing pad, and the pointed abrasive particles of the second dresser provide a roughening effect. The surface of the polishing pad creates a ridge, and therefore, the dual CMP polishing system has an excellent finishing effect by disposing the pointed abrasive particles and the flat abrasive particles on different pedestals, respectively.

The detailed description and technical content of the present invention will now be described as follows:

Referring to FIG. 1 to FIG. 3, respectively, a schematic diagram of a dual chemical mechanical polishing trimming system according to an embodiment of the present invention, a schematic view of the first trimmer according to an embodiment of the present invention, and an implementation of the present invention. A schematic top view of the second conditioner in the example. As shown, the present invention is a dual CMP polishing system 1 for trimming a surface 31 of a polishing pad 30 that is carried on a rotating platform 40. The system 1 includes a first trimmer. 10 and a second dresser 20, the first dresser 10 includes a first base 11 and a plurality of flat abrasive particles 12 disposed on the first base 11, the second trimmer 20 includes a second The base 21 and a plurality of pointed abrasive particles 22 disposed on the second base 21. In one embodiment of the present invention, the first pedestal 11 and/or the second pedestal 21 are made of stainless steel, a metal material, a plastic material, a ceramic material, or a combination thereof. In the embodiment, the flat abrasive particles 12 of the first trimmer 10 and the second trimmer 20 and the pointed abrasive particles 22 are respectively disposed on the first base in a two concentric arrangement. The seat 11 and the second base 21 are on the base. Continuing to refer to FIG. 4 and FIG. 5, in another embodiment, the flat abrasive particles 12 of the first trimmer 10 and the second trimmer 20 and the pointed abrasive particles 22 They are respectively disposed on the first base 11 and the second base 21 in a matrix arrangement. It can be adjusted according to actual needs, not limited to the case of this case.

Continuing to refer to FIG. 6 , which is a side view of the AA direction of FIG. 2 , in an embodiment, the first pedestal 11 includes a plurality of first accommodating slots 111 , and the first trimming The device 10 further includes a plurality of first carrier pillar bonding layers 13 , a plurality of first carrier pillars 14 , and a plurality of first bonding layers 15 disposed on the first carrier pillars 14 . The first carrier pillar bonding layer 13 is disposed on the first bonding pillars 13 . The first receiving groove 111 is disposed on the first carrier-bonding layer 13 and is fixed to the first receiving groove 111 through the first carrier-bonding layer 13 . The first bonding layer 15 is fixed on the first supporting column 14 , and the flat grinding particle 12 has a flat top surface 121 ; or a cross-sectional view in the BB direction of FIG. 3 as shown in FIG. 7 . The second base 21 includes a plurality of second receiving slots 211. The second trimmer 20 further includes a plurality of second carrying post bonding layers 23, a plurality of second carrying posts 24, and a plurality of second carrying posts. a second bonding layer 25 on the column 24, the second carrier column bonding layer 23 is disposed on the second receiving layer a groove 211, the second carrier column 24 is disposed on the second carrier column bonding layer 23 and is fixed to the second receiving groove 211 through the second carrier column bonding layer 23, and the pointed abrasive particles 22 pass through the second bonding Layer 25 is secured to the second carrier post 24 and the pointed abrasive particle 22 has a tip apex 221 .

Continuing to refer to FIG. 8 , which is a side view of the CC direction of FIG. 4 , the first pedestal 11 is a planar substrate, and the first trimmer 10 further includes a third bonding layer 16 . The third bonding layer 16 is disposed on the surface of the first pedestal 11, and the grading abrasive particles 12 are fixed on the first pedestal 11 through the third bonding layer 16; or as shown in FIG. The second pedestal 21 is a planar substrate, and the second aligner 20 further includes a fourth bonding layer 26, and the fourth bonding layer 26 is disposed on the second pedestal. The surface of the surface of the 21, the pointed abrasive particles 22 are fixed to the second base 21 through the fourth bonding layer 26.

In an embodiment of the invention, the material of the first carrier column 14 and/or the second carrier column 24 may be stainless steel, metal material, plastic material, ceramic material or the combination thereof. The material of the first carrier pillar bonding layer 13, the second carrier pillar bonding layer 23, the first bonding layer 15, the second bonding layer 25, the third bonding layer 16, and/or the fourth bonding layer 26 may be It is a ceramic material, a brazing material, a plating material, a metal material or a polymer material, wherein the brazing material may be iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, boron, carbon metal or alloy. In one embodiment, the brazing material may be a Nicrobraz LM alloy having a composition of 7 wt.% Cr, 3.1 wt.% B, 4.5 wt.% Si, 3.0 wt.% Fe, 0.06 wt. % C, the rest is Ni. The polymer material may be an epoxy resin, a polyester resin, a polyacryl resin or a phenol resin. In the present invention, the first base 11, the second base 21, the first carrier 14 and/or the second carrier 24 are preferably made of stainless steel, but the invention is not limited thereto. The user can change according to the needs. The first carrier pillar bonding layer 13 and the second carrier pillar bonding layer 23 are preferably a polymer material, such as an epoxy resin or an acrylic resin, and the first bonding layer 15 and the second bonding layer 25 are relatively Preferably, the third bonding layer 16 and the fourth bonding layer 26 are brazing materials or polymer materials.

Please refer to FIG. 10 to FIG. 13 , which are schematic diagrams showing a first aspect, a second aspect, a third aspect, and a fourth aspect of the pointed abrasive particle according to an embodiment of the present invention. The shape of the pointed abrasive particles 22 may be an octahedron, as shown in FIG. 10, however, the pointed abrasive particles 22 of the shape of FIG. 10 are not easy to obtain in practice, so that it is easy to obtain. The pointed abrasive particle 22 having a shape of a six-octahedron, as shown in FIG. 11 to FIG. 13 , wherein the first aspect, the second aspect, the third aspect, and the fourth aspect The V(100)/V(111) of the pointed abrasive particles 22 were 1.65, 1.30, 1.155, and 1.00, respectively, and α was 2.85, 2.25, 2.00, and 1.73, respectively. The above is merely illustrative, and the pointed abrasive particles 22 referred to in the present invention should include any abrasive particles having the tip apex 221 of the tip. Please refer to FIG. 14 to FIG. 17 respectively, which are schematic diagrams showing the first aspect, the second aspect, the third aspect and the fourth aspect of the flat-polished abrasive particles according to an embodiment of the present invention. The shape of the flat-head abrasive particles 12 may be a hexahedron, as shown in FIG. 14 . However, the flat-head abrasive particles 12 of the shape of FIG. 14 are not easily obtained in practice, and thus the shape that can be easily obtained is selected. The flat-head abrasive particles 12 of the six-octahedron, as shown in FIG. 15 to FIG. 17, wherein the flat-surface abrasive particles of the first state, the second state, the third state, and the fourth aspect are V(100)/V(111) of 12 is 0.60, 0.70, 0.80, and 0.87, respectively, and α is 1.04, 1.21, 1.39, and 1.50, respectively. In the present embodiment, the flat-head abrasive particles 12 in "Fig. 6" and "Fig. 8" are made of the flat-head abrasive particles 12 having a shape of a six-octahedron as shown in Fig. 15. The above is merely illustrative, and the flat abrasive particles 12 referred to in the present invention should include any abrasive particles having the flat top surface 121.

Further, in an embodiment of the invention, the flat abrasive particles 12 have a negative bevel or a 0 degree angle, wherein the negative bevel angle is between 0 and -35 degrees. Please refer to FIG. 18, which is a schematic view showing a cutting angle of a negative oblique angle according to an embodiment of the present invention. The flat abrasive particle 12 has a cutting surface 122 on the surface 31 of the polishing pad 30. When the trimming is performed, a cutting angle θ is formed. When the cutting angle θ is greater than 90 degrees, the negative oblique angle is obtained. As shown in FIG. 18, when the cutting angle θ is less than 90 degrees, it is a positive oblique angle. The angle, when the cutting angle θ is equal to 90 degrees, is the 0 degree angle.

In actual operation, please continue to refer to FIG. 1 , in which the wafer is planarized by the polishing pad 30 , and when the polishing pad 30 is used multiple times, the polishing pad 30 is used. The embossing will gradually passivate and produce debris, so the polishing pad 30 needs to be trimmed by a trimmer. When the dual chemical mechanical polishing trimming system 1 of the present invention is used, the trimming can be performed in three ways, wherein the first one uses the first trimmer 10 first, and then the second trimmer 20; the second is used first The second trimmer 20, the first trimmer 10 is used again; or the third is to use the first trimmer 10 and the second trimmer 20 simultaneously. In the present invention, the flat abrasive particles 12 are used to provide trimming and deglazing functions to level the surface 31 of the polishing pad 30, and the pointed abrasive particles 22 provide a roughening finish for the polishing The surface 31 of the pad 30 creates a ridge; and in order to prevent the second dresser 20 from being embossed on the surface 31 of the polishing pad 30, the ridge is removed and leveled by the first dresser 10. The first trimmer 10 and the second trimmer 20 are sequentially used.

In summary, the effect of the present invention over the prior art is that the flat-head abrasive particles are used to provide trimming and de-glazing functions to level the surface of the polishing pad while the pointed abrasive particles provide roughening The trimming effect creates a ridge on the surface of the polishing pad. Therefore, the dual CMP polishing system has excellent trimming effect by disposing the pointed abrasive particles and the flat grinding particles on different pedestals respectively. .

The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

1: Double chemical mechanical polishing dressing system 10: First trimmer 11: First base 111: First receiving groove 12: Flat grinding particles 121: Flat top surface 122: Cutting surface 13: First bearing column bonding layer 14 : first carrier column 15 : first bonding layer 16 : third bonding layer 20 : second trimmer 21 : second pedestal 211 : second accommodating groove 22 : pointed abrasive particles 221 : tip apex 23 : second Bearing column bonding layer 24: second carrier column 25: second bonding layer 26: fourth bonding layer 30: polishing pad 31: surface 40: rotating platform θ: cutting angle

FIG. 1 is a schematic view of a dual chemical mechanical polishing trimming system according to an embodiment of the present invention. FIG. 2 is a schematic top view of the first dresser according to an embodiment of the invention. FIG. 3 is a schematic top view of the second trimmer according to an embodiment of the invention. FIG. 4 is a schematic top view of the first trimmer according to another embodiment of the present invention. FIG. 5 is a schematic top view of the second trimmer according to another embodiment of the present invention. "Fig. 6" is a side view of the A-A direction of "Fig. 2". Fig. 7 is a schematic cross-sectional view taken along line B-B of Fig. 3 . Fig. 8 is a side view showing the C-C direction of Fig. 4 . FIG. 9 is a schematic cross-sectional view taken along the line D-D of FIG. 5. FIG. 10 is a schematic view showing the first aspect of the pointed abrasive particles in an embodiment of the present invention. Figure 11 is a schematic view showing the second aspect of the pointed abrasive particles in an embodiment of the present invention. Fig. 12 is a schematic view showing a third aspect of the pointed abrasive particles in an embodiment of the present invention. Figure 13 is a schematic view showing the fourth aspect of the pointed abrasive particles in an embodiment of the present invention. Figure 14 is a schematic view showing the first aspect of the flat-polished abrasive particles in an embodiment of the present invention. Figure 15 is a schematic view showing the second aspect of the flat-head abrasive particles in an embodiment of the present invention. Figure 16 is a schematic view showing a third aspect of the flat-head abrasive particles in an embodiment of the present invention. Figure 17 is a schematic view showing the fourth aspect of the flat-head abrasive particles in an embodiment of the present invention. FIG. 18 is a schematic view showing a cutting angle of a negative oblique angle in an embodiment of the present invention.

Claims (14)

A dual CMP polishing process for trimming a surface of a polishing pad, the dual CMP polishing system comprising: a first trimmer comprising a first pedestal and a plurality of pedestals disposed on the first pedestal The flat-head abrasive particles, wherein the first dresser further comprises a first carrier-bonding layer, a first carrier, and a first bonding layer, the first carrier-bonding layer being disposed on the plurality of the first pedestals a first accommodating column is disposed on the first carrier column bonding layer and is fixed to the first accommodating groove through the first carrier column bonding layer, and the first bonding layer is disposed on the first accommodating column The flat-head abrasive particles are disposed on the first bonding layer and fixed to the first carrier through the first bonding layer; and a second trimmer includes a second pedestal and a plurality of the second pedestals a tip-grinding particle on the pedestal, wherein the second dresser further includes a second carrier-bonding layer, a second carrier, and a second bonding layer, wherein the second carrier-bonding layer is disposed on the second substrate Multiple of the seat a second accommodating column is disposed on the second carrier column bonding layer and is fixed to the second accommodating groove through the second carrier column bonding layer, and the second bonding layer is disposed on the second carrier column The pointed abrasive particles are disposed on the second bonding layer and are fixed to the second carrier through the second bonding layer; wherein the first trimmer and the second trimmer perform the surface of the polishing pad trim. The dual chemical mechanical polishing finishing system according to claim 1, wherein the composition of the first bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. The dual chemical mechanical polishing trimming system according to claim 1, wherein the composition of the first bearing pillar bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. group. The dual chemical mechanical polishing finishing system according to claim 1, wherein the composition of the second bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. The dual chemical mechanical polishing finishing system according to claim 1, wherein the composition of the second carrier-bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. group. The double chemical mechanical polishing finishing system according to claim 1, wherein the material of the first bearing column is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. The double chemical mechanical polishing finishing system according to claim 1, wherein the material of the second bearing column is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. A dual CMP polishing process for trimming a surface of a polishing pad, the dual CMP polishing system comprising: a first trimmer comprising a first pedestal and a plurality of pedestals disposed on the first pedestal The flat-head abrasive particles, wherein the first trimmer further comprises a third bonding layer disposed on a surface of the first pedestal, the flat-head abrasive particles being fixed to the first base through the third bonding layer a second base is a planar substrate; and a second trimmer includes a second base and a plurality of pointed abrasive particles disposed on the second base, wherein the second trimmer Further comprising a fourth bonding layer disposed on a surface of the second pedestal, the pointed abrasive particles being fixed to the second pedestal through the fourth bonding layer, wherein the second pedestal is a planar substrate; wherein the first trimmer and the second trimmer trim the surface of the polishing pad. The dual chemical mechanical polishing finishing system according to claim 8, wherein the composition of the third bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. The dual chemical mechanical polishing finishing system according to claim 8, wherein the composition of the fourth bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials. The dual chemical mechanical polishing finishing system according to claim 1 or 8, wherein the material of the first base is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. The dual chemical mechanical polishing finishing system according to claim 1 or 8, wherein the material of the second base is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. The dual chemical mechanical polishing finishing system of claim 1 or 8, wherein the flat abrasive particles have a negative oblique angle or a 0 degree angle, and the negative oblique angle is between 0 degrees and -35 degrees. between. A dual chemical mechanical polishing method for trimming a surface of a polishing pad using a dual CMP polishing system of claim 1 or 8.