TWI620982B - 用於奈米壓印之處理氣體局限技術 - Google Patents

用於奈米壓印之處理氣體局限技術 Download PDF

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Publication number
TWI620982B
TWI620982B TW100104307A TW100104307A TWI620982B TW I620982 B TWI620982 B TW I620982B TW 100104307 A TW100104307 A TW 100104307A TW 100104307 A TW100104307 A TW 100104307A TW I620982 B TWI620982 B TW I620982B
Authority
TW
Taiwan
Prior art keywords
substrate
barrier member
gas
collet
barrier
Prior art date
Application number
TW100104307A
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English (en)
Chinese (zh)
Other versions
TW201144951A (en
Inventor
安柯 傑恩
史帝芬C 夏克里頓
崔炳鎮
Original Assignee
分子壓模公司
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Publication date
Application filed by 分子壓模公司 filed Critical 分子壓模公司
Publication of TW201144951A publication Critical patent/TW201144951A/zh
Application granted granted Critical
Publication of TWI620982B publication Critical patent/TWI620982B/zh

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
TW100104307A 2010-02-09 2011-02-09 用於奈米壓印之處理氣體局限技術 TWI620982B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30273810P 2010-02-09 2010-02-09
US61/302,738 2010-02-09

Publications (2)

Publication Number Publication Date
TW201144951A TW201144951A (en) 2011-12-16
TWI620982B true TWI620982B (zh) 2018-04-11

Family

ID=44353067

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104307A TWI620982B (zh) 2010-02-09 2011-02-09 用於奈米壓印之處理氣體局限技術

Country Status (5)

Country Link
US (1) US20110193251A1 (OSRAM)
EP (1) EP2534536A2 (OSRAM)
JP (1) JP5848263B2 (OSRAM)
TW (1) TWI620982B (OSRAM)
WO (1) WO2011100050A2 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722801B2 (ja) 1987-03-18 1995-03-15 石川島播磨重工業株式会社 中空管の鍛造方法
JP3333115B2 (ja) 1997-07-22 2002-10-07 株式会社神戸製鋼所 大径リングの鍛造装置
JP5787691B2 (ja) * 2011-09-21 2015-09-30 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
WO2013048577A1 (en) * 2011-09-26 2013-04-04 Solarity, Inc. Substrate and superstrate design and process for nano-imprinting lithography of light and carrier collection management devices
JP6064466B2 (ja) * 2012-09-11 2017-01-25 大日本印刷株式会社 インプリント方法およびそれを実施するためのインプリント装置
JP6230041B2 (ja) 2013-04-18 2017-11-15 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP2015056548A (ja) * 2013-09-12 2015-03-23 大日本印刷株式会社 インプリント装置及びインプリント方法
CN103758153A (zh) * 2014-01-17 2014-04-30 国家电网公司 一种具有警示功能的井盖
JP6525567B2 (ja) 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
JP7064310B2 (ja) * 2017-10-24 2022-05-10 キヤノン株式会社 インプリント装置、および物品製造方法
JP7210155B2 (ja) * 2018-04-16 2023-01-23 キヤノン株式会社 装置、方法、および物品製造方法
US11590687B2 (en) 2020-06-30 2023-02-28 Canon Kabushiki Kaisha Systems and methods for reducing pressure while shaping a film

Citations (4)

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US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
US20050072755A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Single phase fluid imprint lithography method
US20070065532A1 (en) * 2005-09-21 2007-03-22 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate
US7462028B2 (en) * 2006-04-03 2008-12-09 Molecular Imprints, Inc. Partial vacuum environment imprinting

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7611348B2 (en) * 2005-04-19 2009-11-03 Asml Netherlands B.V. Imprint lithography
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US20090056575A1 (en) * 2007-08-31 2009-03-05 Bartman Jon A Pattern transfer apparatus
WO2011064021A1 (en) * 2009-11-30 2011-06-03 Asml Netherlands B.V. Imprint lithography apparatus and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
US20050072755A1 (en) * 2003-10-02 2005-04-07 University Of Texas System Board Of Regents Single phase fluid imprint lithography method
US20070065532A1 (en) * 2005-09-21 2007-03-22 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate
US7462028B2 (en) * 2006-04-03 2008-12-09 Molecular Imprints, Inc. Partial vacuum environment imprinting

Also Published As

Publication number Publication date
TW201144951A (en) 2011-12-16
US20110193251A1 (en) 2011-08-11
WO2011100050A2 (en) 2011-08-18
JP2013519228A (ja) 2013-05-23
JP5848263B2 (ja) 2016-01-27
EP2534536A2 (en) 2012-12-19
WO2011100050A3 (en) 2011-11-10

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