TWI620288B - 用於高功率半導體裝置的封裝 - Google Patents

用於高功率半導體裝置的封裝 Download PDF

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Publication number
TWI620288B
TWI620288B TW103104655A TW103104655A TWI620288B TW I620288 B TWI620288 B TW I620288B TW 103104655 A TW103104655 A TW 103104655A TW 103104655 A TW103104655 A TW 103104655A TW I620288 B TWI620288 B TW I620288B
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TW
Taiwan
Prior art keywords
thermally conductive
conductive layer
package
coupled
layer
Prior art date
Application number
TW103104655A
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English (en)
Chinese (zh)
Other versions
TW201444034A (zh
Inventor
塔拉克Ａ 雷卡爾
迪普Ｃ 都卡
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三胞半導體公司
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Application filed by 三胞半導體公司 filed Critical 三胞半導體公司
Publication of TW201444034A publication Critical patent/TW201444034A/zh
Application granted granted Critical
Publication of TWI620288B publication Critical patent/TWI620288B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW103104655A 2013-02-18 2014-02-13 用於高功率半導體裝置的封裝 TWI620288B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/769,729 2013-02-18
US13/769,729 US8946894B2 (en) 2013-02-18 2013-02-18 Package for high-power semiconductor devices

Publications (2)

Publication Number Publication Date
TW201444034A TW201444034A (zh) 2014-11-16
TWI620288B true TWI620288B (zh) 2018-04-01

Family

ID=51263970

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103104655A TWI620288B (zh) 2013-02-18 2014-02-13 用於高功率半導體裝置的封裝

Country Status (4)

Country Link
US (2) US8946894B2 (enExample)
JP (1) JP6527666B2 (enExample)
DE (1) DE102014001217A1 (enExample)
TW (1) TWI620288B (enExample)

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Publication number Priority date Publication date Assignee Title
EP1973190A1 (en) 2007-03-20 2008-09-24 Rohm and Haas Electronic Materials LLC Integrated electronic components and methods of formation thereof
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
US10003149B2 (en) 2014-10-25 2018-06-19 ComponentZee, LLC Fluid pressure activated electrical contact devices and methods
US10847469B2 (en) * 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
WO2017082926A1 (en) * 2015-11-13 2017-05-18 Intel Corporation Apparatus and method for mitigating surface imperfections on die backside film
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
EP3208841B1 (de) * 2016-02-19 2020-12-09 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer wärmespreizplatte, wärmespreizplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
EP3208842A1 (de) * 2016-02-19 2017-08-23 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer substratplatte, substratplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
US9984951B2 (en) * 2016-07-29 2018-05-29 Nxp Usa, Inc. Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof
US20200368804A1 (en) * 2019-05-24 2020-11-26 Trusval Technology Co., Ltd. Manufacturing process for heat sink composite having heat dissipation function and manufacturing method for its finished product
US11862718B2 (en) 2020-10-12 2024-01-02 Bae Systems Information And Electronic Systems Integration Inc. III-nitride thermal management based on aluminum nitride substrates
US12224337B2 (en) * 2020-12-23 2025-02-11 Intel Corporation PGaN enhancement mode HEMTs with dopant diffusion spacer

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20030141518A1 (en) * 2000-11-21 2003-07-31 Toshiya Yokogawa Semiconductor device and equipment for communication system
US20040238946A1 (en) * 2002-11-07 2004-12-02 Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Heat spreader and semiconductor device and package using the same
US20050250250A1 (en) * 2002-10-11 2005-11-10 Chien-Min Sung Diamond composite heat spreader having thermal conductivity gradients and associated methods

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JPS6027188B2 (ja) * 1981-12-15 1985-06-27 住友電気工業株式会社 半導体素子塔載用基板
JPH04213863A (ja) * 1990-12-11 1992-08-04 Fujitsu Ltd Ｉｃ実装用パッケージ／キャリア
US6127724A (en) * 1996-10-31 2000-10-03 Tessera, Inc. Packaged microelectronic elements with enhanced thermal conduction
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
US6617683B2 (en) * 2001-09-28 2003-09-09 Intel Corporation Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material
JP2004172406A (ja) * 2002-11-20 2004-06-17 Kobe Steel Ltd セラミックス付き半導体基板、セラミックス付き半導体ウエハ及びその製造方法
JP2005056967A (ja) * 2003-08-01 2005-03-03 Olympus Corp 半導体コンポーネント
US7579687B2 (en) * 2004-09-03 2009-08-25 Entorian Technologies, Lp Circuit module turbulence enhancement systems and methods
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
JP2006202938A (ja) * 2005-01-20 2006-08-03 Kojiro Kobayashi 半導体装置及びその製造方法
JP4914900B2 (ja) * 2005-11-18 2012-04-11 クリー インコーポレイテッド 固体照明パネル用タイル
US7719816B2 (en) * 2007-05-22 2010-05-18 Centipede Systems, Inc. Compliant thermal contactor
JP5520861B2 (ja) * 2010-03-26 2014-06-11 古河電気工業株式会社 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材
JP5525335B2 (ja) * 2010-05-31 2014-06-18 株式会社日立製作所 焼結銀ペースト材料及び半導体チップ接合方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141518A1 (en) * 2000-11-21 2003-07-31 Toshiya Yokogawa Semiconductor device and equipment for communication system
US20050250250A1 (en) * 2002-10-11 2005-11-10 Chien-Min Sung Diamond composite heat spreader having thermal conductivity gradients and associated methods
US20040238946A1 (en) * 2002-11-07 2004-12-02 Kabushik Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Heat spreader and semiconductor device and package using the same

Also Published As

Publication number Publication date
DE102014001217A1 (de) 2014-08-21
JP2014158025A (ja) 2014-08-28
US20160155681A9 (en) 2016-06-02
JP6527666B2 (ja) 2019-06-05
US8946894B2 (en) 2015-02-03
TW201444034A (zh) 2014-11-16
US9559034B2 (en) 2017-01-31
US20140231815A1 (en) 2014-08-21
US20150104906A1 (en) 2015-04-16

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