TWI618821B - 製造印刷電路板線路的方法 - Google Patents

製造印刷電路板線路的方法 Download PDF

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TWI618821B
TWI618821B TW106113528A TW106113528A TWI618821B TW I618821 B TWI618821 B TW I618821B TW 106113528 A TW106113528 A TW 106113528A TW 106113528 A TW106113528 A TW 106113528A TW I618821 B TWI618821 B TW I618821B
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copper layer
plating
reverse
ratio
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葉錠強
楊豐吉
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萬億股份有限公司
葉錠強
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Abstract

本發明是關於一種製造印刷電路板線路的方法,可提昇高密度互連(HDI)技術中有關類載板型態PCB線路之佈線等級。第一段係藉由還原氧化石墨烯(rGO)導電層的運用,完成電鍍填孔及超薄表面銅層。第二段則以週期性脈衝反向(PPR)電鍍程序增厚線路,再蝕刻去除不需要的銅層。本發明方法製作的線路不僅滿足線寬/線距小於30/30um的要求,且高度均勻而線型方正。

Description

製造印刷電路板線路的方法
本發明是關於一種製造印刷電路板線路方法,特別是藉由還原氧化石墨烯(rGO)導電層及週期性脈衝反向(PPR)電鍍的運用,可提昇高密度互連(HDI)技術中有關類載板型態PCB線路之佈線等級。
印刷電路板(Printed Circuit Board,PCB)是在絕緣基材上,配以電導線路的一種結構性電子元件。當積體電路製程進入微米(um)時代時,PCB之線寬、線距則以毫米(mm)為設計目標。如今,積體電路已進入奈米(nano)製程,而PCB亦步入微米時代,因此,高密度互連(High-Density Interconnection,HDI)技術已廣泛應用在PCB產業。
由於PCB與IC的線寬/線距有相當差異,傳統製程上會先封裝IC於載板上,例如覆晶載板(Flip Chip,FC),再黏貼於PCB上。藉由載板線路,可將IC線路與PCB線路連結。然而,隨著電子產品以輕、薄、短小為發展方向,省略IC載板而將IC直接封裝所謂類載板型態之PCB上,必然成為趨勢。但首先必須克服PCB線路極細化這個難題。
改良半加成法(Modified Semi-Additive Process,MSAP)為目前用於PCB較可行之製程,主要包括:在鑽孔的銅箔基板上化學沉積形成表面銅層,接著以圖形電鍍填孔及增厚線路,最後去除抗鍍膜及蝕刻掉非線路區的銅箔及表面銅層,得到獨立的線路。
然而,習知MSAP在製作30/30um以下的細線路時,如第1圖所示,仍存在下列問題:
A.表面銅層的厚度不均勻。
B.去除面銅層時易發生側蝕。
C.電鍍增厚線路的高度不均勻。
D.線路無法達到線型方正之截面
本發明的目的在於提供一種製造印刷電路板線路的方法,在無需大幅修改既有製程,亦不需要昂貴的器材或材料的情況下,便可製作高密度且線型優異的細電路。
本發明方法主要包括下列步驟:A.提供一完成鑽孔的覆銅基板,將還原氧化石墨烯(rGO)導電層修飾在孔內壁;B.實施電鍍程序,同時完成該孔內部鍍填銅與表面銅層,該表面銅層的厚度為1~20um,且高低差不大於10%;C.在該表面銅層表面的非線路區形成抗鍍乾膜,線路區則包括寬度為5~50um的細線路,線距為5~50um;D.實施週期性脈衝反向電鍍程序,於線路區 形成一增厚銅層,其高度為5~50um,且高低差不大於15%;E.去除抗鍍乾膜;F.實施蝕刻程序,去除非線路區的表面銅層。
週期性脈衝反向電鍍程序的正向電流密度較佳為0.5~5 ASD,正向與反向的電流密度比較佳為1:1~1:10,更佳為1:1~1:5;正向與反向的時間比較佳為2:1~50:1,更佳為10:1~25:1。
第1圖顯示習知MSAP在製作30/30um以下的細線路時,電鍍增厚線路的高度不均勻且無法達到線型方正之截面。第2圖為第1圖之比較圖,但盲孔底部保留金屬層。
第2圖顯示互連基板之盲孔,可藉由rGO之運用,得到極薄之表面銅層及良好之填孔效果。
第3圖顯示以PPR方式進行圖型電鍍,無論高低電流區其大平面、密集線路區、或孔疏孔密,其厚度均勻度及線型方正之截面均可得良好之效果。
以下實施步驟的操作條件可視環境逕行調整搭配,文中所述僅為建議之較佳範圍。
實施例1
A. 修飾rGO於孔洞中(SLOTOGO)
取表面鑽好盲孔的銅箔基板,銅箔厚度為3um,盲孔 的直徑為75um,深度為50um,盲孔間距最小為0.3mm。將基板浸入調節劑(PVI金屬鹽類Polyvinylimidazole,PVI)水溶液中,使盲孔底面及內壁形成高分子層。調節劑水溶液濃度為4-10g/L,控制在pH 3-6,溫度為60℃。10分鐘後,取出水洗並吹乾。
接著,將基板浸入氧化石墨烯(Graphene Oxide,GO)水溶液中,使氧化石墨烯吸附並鍵結於孔洞內壁的PVI層。氧化石墨烯溶液濃度為0.1-1g/L,控制在pH 3-6,溫度為60℃。10分鐘後,取出水洗並吹乾。
對基板施予H2之電漿,進行還原作業10分鐘。使孔洞內壁的氧化石墨烯(GO)還原為還原氧化石墨烯(rGO)。
B. 電鍍填孔及表面銅層
電鍍前,先以酸性清潔劑(SCHLOTTER公司的產品SLOTOCLEAN S 20,0.5-5%)清洗基板,除去表面的雜質。15-30℃下進行3-10分鐘後,取出水洗。接著,將基板浸入微蝕刻溶液(SCHLOTTER公司的產品SLOTOETCH 584,10-40g/L)中,進一步除去氧化皮膜。15-30℃下進行3-10分鐘後,取出水洗。
將清洗後的基板浸入電鍍溶液中進行電鍍作業,使用SCHLOETTER的2.5L電解槽。電鍍溶液包括CuSO4(220g/L),H2SO4(40g/L),氯離子(60ppm),載運劑(SCHLOTTER公司的產品SLOTOCOUP 31,5ml/L),光澤劑(SCHLOTTER公司的產品SLOTOCOUP 32,0.2ml/L),整平劑(SCHLOTTER公司的產品 SLOTOCOUP 33,0.18ml/L)。電流密度為10 ASF,較低攪拌強度,時間為50分鐘。銅離子與rGO鍵結後沉積在盲孔中,並在基板表面形成均勻銅層,含銅箔的總厚度只有6.2um,如第2圖所示。
C. 非線路區抗鍍處理
對表面銅層進行清潔、微蝕刻後,貼覆一層抗電鍍油墨。藉由曝光顯影,在非線路區的表面形成抗鍍乾膜。線路區的細線路設計寬度為30um,線距為30um。
D. PPR電鍍增厚線路
對線路區實施週期性脈衝反向(Periodic Pulse Reverse,PPR)垂直電鍍程序,電鍍溶液包括CuSO4(80g/L),H2SO4(200g/L),氯離子(100ppm),添加劑(SCHLOTTER公司的產品SLOTOCOUP CU211,10ml/L;SLOTOCOUP CU212,0.15ml/L)。正向電流密度為2 ASD,正向與反向的電流密度比為1:2,正向與反向的時間比為20:1,正常攪拌強度,電鍍時間為60分鐘。
E. 去除抗鍍乾膜及表面銅層
將抗鍍乾膜剝除後,實施差分蝕刻(differential etching)程序,快速去除非線路區的面銅層,留下獨立的細線路。
第3圖顯示以進行PPR電鍍所得到的細線路,其中(a)為平行線路方向的縱剖面,線高範圍為22.02~22.81um,高低差僅 3.5%;(b)~(d)為垂直的縱剖面,線高範圍為20.59~21.73um,高低差僅5.2%。
由上圖可得知,本發明製程具有下列特徵及優點:
A.以rGO運用之PTH製程,實施全板填孔電鍍(PANEL PLATING)不僅填孔效果良好,表面銅層的厚度及均勻度皆可達到要求。
B.最後進行蝕刻程序時,可快速移除薄而均勻的表面銅層,不會有側蝕問題發生。
C.以PPR電鍍方式實施圖電增厚(PATTERN PLATING),不僅線寬線距滿足精細線路規格(表層均勻及線型方正),且線路高度均勻。

Claims (3)

  1. 一種製造印刷電路板線路的方法,包括下列步驟:A.提供一完成鑽孔的覆銅基板,將還原氧化石墨烯(rGO)導電層修飾在孔內壁;B.實施電鍍程序,同時完成該孔內部鍍填銅與表面銅層,該表面銅層的厚度為1~20um,且高低差不大於10%;C.在該表面銅層表面的非線路區形成抗鍍乾膜,線路區則包括寬度為5~50um的細線路,線距為5~50um;D.實施週期性脈衝反向電鍍程序,於線路區形成一增厚銅層,其高度為5~50um,且高低差不大於15%;E.去除抗鍍乾膜;F.實施蝕刻程序,去除非線路區的表面銅層。
  2. 如請求項1的方法,其中該週期性脈衝反向電鍍程序的正向電流密度為0.5~5 ASD,正向與反向的電流密度比為1:1~1:10,正向與反向的時間比為2:1~50:1。
  3. 如請求項2的方法,其中該正向與反向的電流密度比為1:1~1:5,正向與反向的時間比為10:1~25:1。
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