TWI616428B - High purity 2-fluorobutane and method of use thereof - Google Patents
High purity 2-fluorobutane and method of use thereof Download PDFInfo
- Publication number
- TWI616428B TWI616428B TW103107796A TW103107796A TWI616428B TW I616428 B TWI616428 B TW I616428B TW 103107796 A TW103107796 A TW 103107796A TW 103107796 A TW103107796 A TW 103107796A TW I616428 B TWI616428 B TW I616428B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluorobutane
- ppm
- volume
- purity
- butene
- Prior art date
Links
- IXHWZHXLJJPXIS-UHFFFAOYSA-N 2-fluorobutane Chemical compound CCC(C)F IXHWZHXLJJPXIS-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 8
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 abstract description 21
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004821 distillation Methods 0.000 description 30
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 238000010992 reflux Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000002808 molecular sieve Substances 0.000 description 11
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- IAQRGUVFOMOMEM-ONEGZZNKSA-N trans-but-2-ene Chemical compound C\C=C\C IAQRGUVFOMOMEM-ONEGZZNKSA-N 0.000 description 9
- IAQRGUVFOMOMEM-ARJAWSKDSA-N cis-but-2-ene Chemical compound C\C=C/C IAQRGUVFOMOMEM-ARJAWSKDSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000012025 fluorinating agent Substances 0.000 description 6
- 238000004817 gas chromatography Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000000746 purification Methods 0.000 description 6
- 239000003463 adsorbent Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 3
- 239000005457 ice water Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- UPSXAPQYNGXVBF-UHFFFAOYSA-N 2-bromobutane Chemical compound CCC(C)Br UPSXAPQYNGXVBF-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 101000956368 Trittame loki CRISP/Allergen/PR-1 Proteins 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- OSQPUMRCKZAIOZ-UHFFFAOYSA-N carbon dioxide;ethanol Chemical compound CCO.O=C=O OSQPUMRCKZAIOZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- XNMQEEKYCVKGBD-UHFFFAOYSA-N dimethylacetylene Natural products CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 235000003270 potassium fluoride Nutrition 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001577 simple distillation Methods 0.000 description 2
- IIADOUMJKYSCPM-UHFFFAOYSA-N 2,2-difluorobutane Chemical compound CCC(C)(F)F IIADOUMJKYSCPM-UHFFFAOYSA-N 0.000 description 1
- BQHQZFUAEAVJRE-UHFFFAOYSA-N 2-fluorobuta-1,3-diene Chemical compound FC(=C)C=C BQHQZFUAEAVJRE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 229910000617 Mangalloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- IZKCZVUEJZBDPL-UHFFFAOYSA-N N,N-diethylethanamine 1,1,2,2,3,3-hexafluorocyclobutane Chemical compound CCN(CC)CC.FC1(F)CC(F)(F)C1(F)F IZKCZVUEJZBDPL-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- LTVOKYUPTHZZQH-UHFFFAOYSA-N difluoromethane Chemical compound F[C]F LTVOKYUPTHZZQH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000895 extractive distillation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000012450 pharmaceutical intermediate Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本發明係一種特徵在於純度為99.9容量%以上,且丁烯類的含量為1000容量ppm以下之高純度2-氟丁烷,及將此高純度2-氟丁烷作為乾式蝕刻氣體使用之方法。
依據本發明,可提供適合作為半導體用的電漿反應用氣體之高純度的2-氟丁烷。
Description
本發明係關於一種高純度2-氟丁烷,其係在使用電漿反應的半導體裝置之製造領域中,作為電漿用蝕刻氣體或CVD用氣體,或含氟醫藥中間體之製造原料、氫氟碳化物系溶劑而有用。
近年來,半導體製造技術的微細化在進展中,在最先進製程中已採用線幅為20nm,甚至10nm世代。伴隨著微細化,其加工時的技術難度也升高,而由使用的材料、裝置、加工方法等多方面著手研究進行技術開發。
在這種背景下,以式:CxHyFz(式中,x表示3、4或5,y、z分別表示正整數,且y>z。)所表示之飽和氟化烴(A),被發現具有凌駕於氮化矽膜的蝕刻所使用之一氟甲烷之性能(專利文獻1)。
與本發明相關,作為2-氟丁烷之製造方法,專利文獻2中記載,藉由讓氟化劑之N,N’-二乙基-3-側氧基甲基三氟丙胺與2-丁醇反應,以46%的產率得到2-氟丁烷。專利文獻3記載,藉由讓氟化劑之三乙銨六氟環丁烷與2-丁醇反應,以68%的產率得到2-氟丁烷。專利文獻4記載,藉由讓六氟化硫與二級丁基鋰環己烷之
正己烷溶液接觸,確認生成氟化二級丁基。還有,專利文獻5記載,藉由在觸媒存在下將2-氟丁二烯加以氫化,得到2-氟丁烷。
專利文獻1 國際公開WO2009/123038號
專利文獻2 日本特開昭59-46251號公報
專利文獻3 日本特開平9-48741號公報
專利文獻4 日本特開2009-292749號公報
專利文獻5 美國專利第2550953號公報
本案發明人確認到,作為將積層於矽或矽氧化膜上之氮化矽膜加以選擇性乾式蝕刻之氣體,在使用以上述先前技術所記載之方法得到之2-氟丁烷時,會生成過量的烴系沉澱物,使蝕刻本身停止。
因此本發明之目的係提供一種2-氟丁烷,其即使在使用作為乾式蝕刻氣體之情形,也不會生成烴系沉澱物,適合作為電漿反應用氣體。
本案發明人對於在使用以先前技術所記載之方法所得到之2-氟丁烷的情形,會產生過量烴系沉澱物,發生蝕刻本身停止之現象的原因進一步加以研究時,發現在2-氟丁烷中含有一定量以上作為雜質之丁烯的情形,會發生此問題,而完成本發明。
因此,依據本發明係提供下述(1)~(3)之高純度2-氟丁烷、(4)之使用方法。
(1)一種高純度2-氟丁烷,其特徵在於:純度為99.9容量%以上,且丁烯類的含量為1000容量ppm以下。
(2)如(1)所記載之高純度2-氟丁烷,其氮含量為100容量ppm,氧含量為50容量ppm以下。
(3)如(1)或(2)所記載之高純度2-氟丁烷,其水分含量為50容量ppm以下。
(4)一種如(1)至(3)中任一項之高純度2-氟丁烷之使用方法,其係使用作為乾式蝕刻氣體。
以下,詳細說明本發明。
本發明之2-氟丁烷的特徵在於:純度為99.9重量%以上,且丁烯的含量為1000容量ppm以下。
本發明中,丁烯為1-丁烯、2-丁烯((E)-2-丁烯與(Z)-2-丁烯)及異丁烯的總稱(以下將它們統稱為「丁烯類」),存在於2-氟丁烷中之1種以上的丁烯類均為雜質。
本發明中,2-氟丁烷的純度及丁烯類的含量,係藉由以氫焰游離偵測器(FID)作為檢測器之氣相層析儀從峰面積所算出之值。
丁烯類能藉由氣相層析質量分析進行同定。
2-氟丁烷中的氮與氧的量,係藉由以熱導偵檢器(TCD)作為檢測器之氣相層析儀所測定之值。
又,2-氟丁烷中的水分量係使用FT-IR測定之值。
本發明之2-氟丁烷能藉由以習知的製造方法,例如以2-丁醇為原料而以氟化劑加以氟化之方法,或將2-氟丁烷以氟化鉀或氟化銫等鹼金屬氟化物處理之方法等,將所製造出的粗2-氟丁烷加以蒸餾精製而得到。
作為上述之以2-丁醇為原料而以氟化劑加以氟化來得到2-氟丁烷之方法,更具體來說可舉出:在Journal of Organic Chemistry,Vol.44,3872(1979)、或Bulletin of the Chemical Society of Japan,Vol.52,3377(1979)所記載之方法。前者係以2-丁醇為原料並使用吡啶的聚氟化氫錯合物作為氟化劑之方法,後者係以2-丁醇為原料並使用由六氟丙烯與二乙胺所調製出的N,N’-二乙基胺基六氟丙烷作為氟化劑之方法。
藉由將以上述方法等所製造出的粗2-氟丁烷加以蒸餾精製(精餾)等,把以丁烯類為首之有機系雜質加以除去。
在以蒸餾精製將有機系雜質除去之情形,會使用精餾塔。特別是為了將2-氟丁烷(沸點:24~25℃)與丁烯類:1-丁烯(沸點:-6.3℃)、(E)-2-丁烯(沸點:0.9℃)、(Z)-2-丁烯(沸點:3.7℃)有效率的分離,會使用具有適當的理論板數之精餾塔。理論板數通常10以上、50左右,較佳為20以上、50左右。這些丁烯類由於沸點在常溫以下,故會因為在精餾塔的餾分抽出管線內的氣化現
象,而讓與目的之2-氟丁烷的分離明顯變差。因此,較佳為將餾分抽出管線或儲藏初餾分之容器加以充分冷卻。
藉由將粗2-氟丁烷加以精餾,能讓丁烯類的含量達1000容量ppm以下,較佳達500容量ppm以下。
精餾時的壓力,錶壓通常為常壓(1大氣壓)~10大氣壓,較佳為常壓~5大氣壓左右。
回流量與出料量的比(以下稱為「回流比」),為了有效率的分離容易成為氣體狀態之丁烯類,回流比較佳設定於30:1以上。回流比若過小,則丁烯類無法有效率的分離,不僅2-氟丁烷的純度之提升幅度會變小,初餾分也會變多,使回收的2-氟丁烷之總量變少。相反的回流比若過大,由於每1次抽出到回收需要龐大的時間,故會使精餾本身需要龐大的時間,而生產率差。
精製採用批次式、連續式中的任一種均可,在製造量少的情形適合採用批次式,在製造量多的情形適合採用經過數支精餾塔之連續式。又,也可組合經添加萃取溶劑之萃取蒸餾操作來進行。
又,雖然也要取決於在製造2-氟丁烷時應用之反應,但在反應轉化率低,需要回收原料之情形等,於蒸餾精製時,也可進行例如:在第1次的蒸餾將原料化合物分離,在第2次的蒸餾將雜質對象之丁烯類分離等階段式蒸餾。在此情形,回流比亦較佳為40:1以上。
2-氟丁烷中的氮與氧,在以精餾來進行前述丁烯類之除去的情形,能藉由在0族的非活性氣體中進
行精製之方法,或將2-氟丁烷簡單蒸餾,進行抽出餾分之操作之方法等來除去。
在依據後者之方法的情形,能藉由簡單蒸餾將氮與氧和2-氟丁烷一起抽出,而降低殘留在鍋中的2-氟丁烷中之氮與氧的量。抽出的2-氟丁烷中的量,相對於注入蒸餾鍋的2-氟丁烷,以重量基準計較佳為20~50%,更佳為30~40%。藉由把抽出之2-氟丁烷儲放起來,添加於下一批次,而能回收、再使用。
本發明中,2-氟丁烷的氮之含量較佳為100容量ppm以下,更佳為80容量ppm以下。又,氧的含量較佳為50容量ppm以下,更佳為30容量ppm以下。
作為將2-氟丁烷中的水分除去之方法,能採用讓2-氟丁烷與吸附劑接觸等一般方法。
作為吸附劑,可使用分子篩或氧化鋁等。如日本特開2014-24785號公報(日本特願2012-165797號)所記載,對於如2-氟丁烷、或2,2-二氟丁烷的單或二氟烴之乾燥,較佳使用分子篩3A。分子篩4A及5A等的細孔徑大,2-氟丁烷分子若被捕入細孔內,則會降低減少水分之效果,又,使用帶有鹼性之分子篩,因會引發2-氟丁烷的脫HF反應,在使用時都需要注意。
又,氧化鋁較佳為藉由氧化鋁水合物之加熱脫水所生成之結晶性低的活性氧化鋁。
在接觸2-氟丁烷前,若藉由燒成等的操作事先使分子篩或氧化鋁等吸附劑更活性化,因能吸附更多的水分而為較佳。藉由讓2-氟丁烷與吸附劑接觸,能將2-氟丁
烷中的水分含量減少至50容量ppm以下。若水分含量多,則在蝕刻加工基板後於加工面會有水分吸附殘存,因恐怕會在銅等配線形成步驟引起積層膜剝離、或埋設的配線腐蝕,故較佳為盡可能減少水分含量。
由此觀點來看,2-氟丁烷的水分含量較佳為50容量ppm以下,更佳為20容量ppm以下。
還有,若將包含源自於水分除去步驟使用之分子篩的粒子之2-氟丁烷保存於填充容器內,則隨時間會引起純度下降。因此,為了抑制容器內的2-氟丁烷之純度下降,2-氟丁烷的0.1μm以上之微粒數較佳為50個/ml以下。因此,於水分除去步驟,在讓分子篩與2-氟丁烷接觸後,較佳為將2-氟丁烷以過濾器過濾回收。
如以上說明,經過藉由精餾,讓反應粗產物中所包含的粗2-氟丁烷成為純度99.9容量%以上,且讓丁烯類成為1000容量ppm以下之步驟,接下來藉由使其與吸附劑接觸,將水分除去之步驟,及藉由將2-氟丁烷予以簡單蒸餾,把2-氟丁烷中的氮、氧濃度降低至100容量ppm以下、50容量ppm以下之步驟,能取得適合作為電漿反應用氣體之高純度2-氟丁烷。
像這樣,藉由減少2-氟丁烷中所含的雜質數量,而能提高使用2-氟丁烷之乾式蝕刻時的加工安定性。
2-氟丁烷不僅是作為氮化矽膜的乾式蝕刻氣體,作為氮化氧化矽膜或氮化鈦膜等的乾式蝕刻氣體也是有用的。
依據本發明,於電漿條件下使用處理氣體之電漿蝕刻方法中,藉由使用包含本發明之高純度2-氟丁烷的處理氣體,能有效率、高選擇性地蝕刻例如覆蓋在形成於被處理體上的矽氧化膜之矽氮化膜、氮化氧化矽膜、氮化矽膜。
以下,依實施例進一步詳細說明本發明,但本發明不因以下實施例而限縮其範圍。另外,除非有特別說明,否則「%」係表示「重量%」。
以下採用的分析條件係如下所述。
(1)氣相層析分析(GC分析)
裝置:HP-6890(安捷倫公司製)
管柱:GL Sciences公司製Inert Cap-1,長度60m,內徑0.25mm、膜厚1.5μm
管柱溫度:於40℃保持10分鐘,接下來以20℃/分鐘升溫,然後於240℃保持10分鐘
注射溫度:200℃
載體氣體:氮
分流比:100/1
檢測器:FID
(2)雜質種類之鑑定(氣相層析質量分析)
GC部分:HP-6890(安捷倫公司製)
管柱:GL Sciences公司製Inert Cap-1,長度60m,內徑0.25mm,膜厚1.5μm
管柱溫度:於40℃保持10分鐘,接下來以20℃/分鐘升溫,然後於240℃保持10分鐘
MS部分:安捷倫公司製5973 NETWORK
檢測器EI型(加速電壓:70eV)
(3)1H-NMR及19F-NMR測定
裝置:JNM-ECA-400(日本電子公司製)400MHz
(4)氮.氧含量之測定(氣相層析分析)
GC部分:HP-7890(安捷倫公司製)
管柱:安捷倫公司製HP-5長度30m,內徑
0.32mm,膜厚0.25μm
管柱溫度:於40℃保持5分鐘,接下來以5℃/分鐘升溫,然後於65℃保持1分鐘
氣體採樣器:50℃
載體氣體:氦
檢測器:TCD+脈衝放電型
(5)水分含量之測定(FT-IR)
IG-1000(大塚電子公司製)
槽長度:10m
於備有攪拌機及蛇形冷凝管之容量500ml的玻璃製反應器中加入116g的噴霧乾燥氟化鉀(Aldrich公司製)、137g的2-溴丁烷(東京化成工業公司製)、及200ml的丙二醇,置於氮氣氣體環境下。將反應器浸漬於油浴中,以95~100℃加熱12小時。讓冷卻至-10℃之冷媒循環於蛇形冷凝管中。12小時後,讓油浴的溫度降至80
℃,將2個浸漬於乾冰-乙醇浴之玻璃製阱串聯連接至反應器。接下來,將壓力調節器及真空泵連接至玻璃製阱的出口。起動真空泵,使用壓力調節器讓系統內的壓力為50~45kPa,接下來階段性的下降至35~30kPa,然後下降至30~25kPa,將揮發成分回收於玻璃阱中。將2個玻璃製阱的內容物合起來以氣相層析儀分析的結果,其係包含0.71面積(容量)%的(E)-2-丁烯、0.68面積(容量)%的(Z)-2-丁烯、21.23面積(容量)%的2-氟丁烷、及77.35面積(容量)%的2-溴丁烷之混合物。
於備有滴液漏斗之容量500ml的玻璃製反應器中放入攪拌子,加入44g的2-丁醇、200ml的乾燥1,2-二氯乙烷,置於氮環境下。以冰水冷卻反應器,從滴液漏斗花1小時將溶解於120ml的乾燥1,2-二氯乙烷120ml之164g的六氟丙烯-二乙胺錯合物(東京化成工業公司製)滴入。滴入結束後,將反應器維持於0℃ 3小時,接下來,繼續於室溫(25℃)攪拌2小時。以氣相層析儀確認原料幾乎消失後,將冰水加入反應液,再以10%碳酸鉀水溶液、飽和食鹽水洗淨後,以無水硫酸鎂加以乾燥。
將所得到的1,2-二氯乙烷溶液簡單蒸餾後,浸漬於乾冰-乙醇浴之接收器內捕集到31.9g的液體。對此液體以氣相層析、及氣相層析質量分析計分析,其係由2.36面積(容量)%的1-丁烯、19.45面積%的(E)-2-丁烯、16.78面積(容量)%的(Z)-2-丁烯、58.51面積(容量)%的2-氟丁烷、及溶媒2.9面積(容量)%的1,2-二氯乙烷所構成之混合物。
(1)1次蒸餾:將4340g重複製造例1的反應所得到之2-氟丁烷的粗產物加入蒸餾鍋,使用KS型精餾塔(東科精機公司製,管柱長:30cm,填充劑:Heli Pack No.1),進行蒸餾。讓-5℃的冷媒循環於冷凝管中。將蒸餾鍋加溫至90℃,使其全回流1小時讓系統內安定後,以回流比30:1進行餾分之抽出。蒸餾鍋係一邊觀察冷凝管的回流情況,一邊從90℃適當升溫,加溫至125℃。對所得到的餾分作氣相層析分析之結果,得到93.24面積(容量)%的2-氟丁烷648g,其係包含作為雜質之1-丁烯、(E)-2-丁烯、及(Z)-2-丁烯,其分別為1.47面積(容量)%、1.98面積(容量)%、及2.48面積(容量)%。
(2)2次蒸餾:將648g的1次蒸餾所得之粗2-氟丁烷加入蒸餾鍋,使用KS型精餾塔(東科精機製、管柱長60cm、填充劑Heli Pack No.1),進行蒸餾。讓-10℃的冷媒循環於冷凝管中,進行約1小時全回流。蒸餾鍋係一邊考慮塔頂部的溫度及鍋內部的殘餘量,一邊以45~70℃加溫。全回流後,以45:1~15:1之間的回流比進行餾分之抽出。其結果,得到99.952面積(容量)%的2-氟丁烷498g,其係包含作為雜質之1-丁烯、(E)-2-丁烯、及(Z)-2-丁烯,其分別為53.4面積(容量)ppm、57.8面積(容量)ppm、及85.0面積(容量)ppm。
2-氟丁烷之光譜資料
1H-NMR(CDCl3,TMS)δ(ppm):0.88(t、3H)、1.17(dq、3H),1.73(m、2H),4.35(m、1H)
19F-NMR(CDCl3、CFCl3)δ(ppm)-173(m,F)
於放入100g的分子篩3A(和光純藥工業公司製)之容量1.2L的SUS316製容器(內面:電解拋光處理)中,加入498g的在實施例1蒸餾精製而得之2-氟丁烷,使其於室溫浸漬22小時。
然後,在容量1L的SUS316製鍋的上部組裝上安裝有短管柱及冷凝管、及接收器之簡單蒸餾裝置,讓-10℃的冷卻水循環於冷凝管中。於鍋中加入進行過水分去除之2-氟丁烷427g,將鍋加溫至50℃。以氣相層析儀測定此時2-氟丁烷中的氮及氧濃度時,分別為515容量ppm及138容量ppm。在相對於加入之2-氟丁烷,抽出約30重量%至接收器時,停止簡單蒸餾,將鍋冷卻至室溫。將鍋內的2-氟丁烷填充309g至備有隔膜閥之容量1L的錳剛製缸(內面粗度:1S)中。測定2-氟丁烷中的氮、氧、及水分含量,其係68容量ppm、20容量ppm、及16容量ppm。
將2060g重複製造例1的反應所得到之粗2-氟丁烷加入蒸餾鍋,使用KS型精餾塔(東科精機公司製,管柱長:60cm,填充劑:Heli Pack No.1),進行蒸餾。讓-10℃的冷媒循環於冷凝管中,進行全回流約1小時。蒸餾鍋係一邊考慮塔頂部的溫度、及鍋內部的殘餘量,一邊從90加溫至125℃。全回流後,以30:1~15:1之間的回流比進行餾分之抽出。其結果,得到99.903
面積(容量)%的2-氟丁烷309g,其係包含作為雜質之1-丁烯、(E)-2-丁烯、及(Z)-2-丁烯,其分別為108面積(容量)ppm、378面積(容量)ppm、及362面積(容量)ppm。
將309g實施例3所得到之2-氟丁烷在容量1.2L的不銹鋼製容器內,與60g的分子篩3A(和光純藥工業公司製)在室溫下浸漬20小時。以不銹鋼管將不銹鋼容器與容量1L的錳鋼製缸連接,透過孔徑0.2μm的金屬製過濾器,在減壓下將2-氟丁烷填充至缸內。將缸以冰水冷卻,透過壓力調節器,在5~10kPa壓力下,一邊以真空泵減壓,一邊抽出約30g的2-氟丁烷。回到室溫,靜置一陣子後,測定2-氟丁烷中的氮.氧、及水分含量,分別為36容量ppm、18容量ppm、及44容量ppm。
將604g重複製造例2的反應所得到之粗2-氟丁烷加入蒸餾鍋,使用KS型精餾塔(東科精機公司製、管柱長:60cm、填充劑:Heli Pack No.1),進行蒸餾。讓-10℃的冷媒循環於冷凝管中,進行全回流約1小時。蒸餾鍋係一邊考慮塔頂部的溫度及鍋內部的殘餘量,一邊以45~70℃加溫。全回流後,以回流比10:1進行餾分之抽出。其結果,得到99.892面積%的2-氟丁烷282g。此2-氟丁烷中,其係包含作為雜質之1-丁烯、(E)-2-丁烯、及(Z)-2-丁烯,其分別為223面積(容量)ppm、516面積(容量)ppm、及551面積(容量)ppm。然後,進行與實施例4相同之操作,將230g的2-氟丁烷
填充至缸。測定2-氟丁烷中的氮.氧、及水分含量,其分別為40容量ppm、11容量ppm、及26容量ppm。
乾式蝕刻評價:使用於表面形成有氮化矽膜之晶圓與於表面形成有矽氧化膜之晶圓,對各晶圓分別進行蝕刻。然後,測定氮化矽膜及矽氧化膜各自的蝕刻速度,依據這些測定結果由對矽氧化膜之氮化矽膜的蝕刻速度比求取選擇比(SiN膜/SiO2膜)。
把於表面形成有氮化矽膜之晶圓與於表面形成有矽氧化膜之晶圓分別設置在平行平板型電漿蝕刻裝置的蝕刻腔體內,讓系統內真空後,使用於實施例2調製之2-氟丁烷,以下述蝕刻條件下實施蝕刻。結果示於表1。
混合氣體之壓力:6.7Pa
上部電極之高頻電源電力:200W
下部電極之高頻電源電力:100W
上部電極與下部電極之間隔:50mm
電極溫度:20℃
氣體流量
O2氣體:60sccm
2-氟丁烷:50sccm
蝕刻時間:180秒
除了將2-氟丁烷替代為於實施例4所調製者以外,與實施例6同樣地實施,進行蝕刻評價。
除了將2-氟丁烷替代為於實施例5所調製者以外,與實施例6同樣地實施,進行蝕刻評價。結果示於表1
將900g重覆實施例1並蒸餾精製而得之純度99.924容量%的2-氟丁烷放入容量2公升的SUS316製容器(內面:電解拋光處理),該2-氟丁烷係包含作為雜質之1-丁烯、(E)-2-丁烯、及(Z)-2-丁烯,其分別為92面積(容量)ppm、361面積(容量)ppm、及307面積(容量)ppm。接下來,將該容器、與填充有聚四氟乙烯製過濾器(Nihon Pall公司製,孔徑0.05μm)和45g的分子篩3A(TOSOH公司製,產品名「ZEORUM(註冊商標)A-3」)之圓筒狀不銹鋼製塔連接,藉以讓從容器流出的2-氟丁烷經過分子篩的填充塔,通過過濾器再回到容器。接下來,使前述容器內的2-氟丁烷,以0.1公升/分鐘的速度進行泵循環,使其乾燥12小時。乾燥後的2-氟丁烷之水分值為9容量ppm。
然後,將放入有水分值為9容量ppm的2-氟丁烷之前述SUS316製容器冷卻至5℃,靜置3小時後,透過閥
連接至設置於無塵室內之液中粒子計數器(RION公司製,係由光散射式液體微粒檢測器「KS-40A」、微粒計數器「KE-40」、及加壓採樣器所構成),以10ml/分鐘的速度將2-氟丁烷加以輸液,測定2-氟丁烷中的微粒數。其結果,0.1μm以上的微粒數為37個/ml。
Claims (6)
- 一種高純度2-氟丁烷,其特徵在於:純度為99.9容量%以上,且丁烯類的含量為1000容量ppm以下。
- 如請求項1之高純度2-氟丁烷,其氮含量為100容量ppm,氧含量為50容量ppm以下。
- 如請求項2之高純度2-氟丁烷,其水分含量為50容量ppm以下。
- 如請求項1之高純度2-氟丁烷,其水分含量為50容量ppm以下。
- 如請求項1至4中任一項之高純度2-氟丁烷,其中0.1μm以上之微粒數為50個/ml以下。
- 一種如請求項1至5中任一項之高純度2-氟丁烷之使用方法,其係使用作為乾式蝕刻氣體。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013045131 | 2013-03-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201437187A TW201437187A (zh) | 2014-10-01 |
TWI616428B true TWI616428B (zh) | 2018-03-01 |
Family
ID=51491385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103107796A TWI616428B (zh) | 2013-03-07 | 2014-03-07 | High purity 2-fluorobutane and method of use thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US9659787B2 (zh) |
EP (1) | EP2966053B1 (zh) |
JP (1) | JP6256462B2 (zh) |
KR (1) | KR20150125005A (zh) |
CN (1) | CN105008316A (zh) |
TW (1) | TWI616428B (zh) |
WO (1) | WO2014136877A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101814406B1 (ko) * | 2013-10-30 | 2018-01-04 | 제온 코포레이션 | 고순도 불소화 탄화수소, 플라즈마 에칭용 가스로서의 사용, 및, 플라즈마 에칭 방법 |
JP6380764B2 (ja) | 2013-12-20 | 2018-08-29 | 日本ゼオン株式会社 | フッ素化炭化水素化合物の精製方法 |
WO2015122386A1 (ja) | 2014-02-12 | 2015-08-20 | 日本ゼオン株式会社 | フッ素化炭化水素の製造方法 |
KR20170103933A (ko) * | 2015-01-22 | 2017-09-13 | 니폰 제온 가부시키가이샤 | 불소화 탄화수소 화합물 충전 완료 가스 충전 용기 |
JP6551064B2 (ja) * | 2015-08-31 | 2019-07-31 | 日本ゼオン株式会社 | 2−フルオロブタン又は2,2−ジフルオロブタンの精製方法 |
JPWO2017047470A1 (ja) * | 2015-09-14 | 2018-06-28 | 日本ゼオン株式会社 | フッ素化炭化水素化合物充填済みガス充填容器、ガス充填容器の製造方法、及びフッ素化炭化水素化合物の保存方法 |
EP3432347A4 (en) * | 2016-03-15 | 2019-11-06 | Zeon Corporation | DRYING COMPOSITION AND CONTAINER OF DRYING COMPOSITION OF FILLED CONTAINERS |
KR20180132051A (ko) * | 2016-03-30 | 2018-12-11 | 니폰 제온 가부시키가이샤 | 필터 및 그 제조 방법, 그리고, 드라이 에칭용 장치 및 드라이 에칭 방법 |
EP3505505A4 (en) | 2016-08-25 | 2020-03-25 | Zeon Corporation | METHOD FOR CONVERTING BUTENES AND METHOD FOR PURIFYING MONOFLUOROBUTANE |
CN110520403B (zh) * | 2017-03-31 | 2022-07-12 | 中央硝子株式会社 | α,α-二氟乙醛半缩醛的制造方法 |
CN111406083B (zh) * | 2017-12-07 | 2022-11-11 | 路博润先进材料公司 | 抗化学性和抗污性热塑聚氨基甲酸酯组合物 |
JP7181486B1 (ja) * | 2021-06-23 | 2022-12-01 | ダイキン工業株式会社 | モノフルオロアルカンの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2534905A (en) * | 1945-07-02 | 1950-12-19 | Phillips Petroleum Co | Distillation of fluorohydrocarbons |
US20110068086A1 (en) * | 2008-03-31 | 2011-03-24 | Zeon Corporation | Plasma etching method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2550953A (en) * | 1944-12-08 | 1951-05-01 | Du Pont | Catalytic hydrogenation of unsaturated fluorohydrocarbons |
US4049728A (en) * | 1976-03-23 | 1977-09-20 | Phillips Petroleum Company | Hydrofluorination process |
JPS5946251A (ja) * | 1982-08-31 | 1984-03-15 | Daikin Ind Ltd | フツ素化剤 |
US5718807A (en) | 1994-09-20 | 1998-02-17 | E. I. Du Pont De Nemours And Company | Purification process for hexafluoroethane products |
DE19525727A1 (de) | 1995-07-14 | 1997-01-16 | Hoechst Ag | Verfahren zur selektiven Herstellung von Monofluorderivaten |
TW486733B (en) * | 1999-12-28 | 2002-05-11 | Toshiba Corp | Dry etching method and manufacturing method of semiconductor device for realizing high selective etching |
JP5104075B2 (ja) * | 2007-07-04 | 2012-12-19 | ダイキン工業株式会社 | ペンタフルオロエタンの精製方法 |
JP5163296B2 (ja) | 2008-06-04 | 2013-03-13 | 宇部興産株式会社 | フッ素化有機化合物の製造方法 |
JP5500692B2 (ja) | 2011-02-10 | 2014-05-21 | サミー株式会社 | スロットマシン |
JP2013095669A (ja) * | 2011-10-28 | 2013-05-20 | Nippon Zeon Co Ltd | 含フッ素化アルカンの製造方法 |
JP5929588B2 (ja) | 2012-07-26 | 2016-06-08 | 日本ゼオン株式会社 | フッ素化炭化水素化合物の精製方法 |
-
2014
- 2014-03-06 US US14/773,043 patent/US9659787B2/en active Active
- 2014-03-06 EP EP14759957.5A patent/EP2966053B1/en not_active Not-in-force
- 2014-03-06 WO PCT/JP2014/055778 patent/WO2014136877A1/ja active Application Filing
- 2014-03-06 KR KR1020157027491A patent/KR20150125005A/ko not_active Application Discontinuation
- 2014-03-06 CN CN201480012705.3A patent/CN105008316A/zh active Pending
- 2014-03-06 JP JP2015504385A patent/JP6256462B2/ja active Active
- 2014-03-07 TW TW103107796A patent/TWI616428B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2534905A (en) * | 1945-07-02 | 1950-12-19 | Phillips Petroleum Co | Distillation of fluorohydrocarbons |
US20110068086A1 (en) * | 2008-03-31 | 2011-03-24 | Zeon Corporation | Plasma etching method |
Also Published As
Publication number | Publication date |
---|---|
CN105008316A (zh) | 2015-10-28 |
WO2014136877A1 (ja) | 2014-09-12 |
EP2966053A1 (en) | 2016-01-13 |
EP2966053B1 (en) | 2018-09-05 |
US9659787B2 (en) | 2017-05-23 |
KR20150125005A (ko) | 2015-11-06 |
JP6256462B2 (ja) | 2018-01-10 |
EP2966053A4 (en) | 2016-10-19 |
US20160016869A1 (en) | 2016-01-21 |
TW201437187A (zh) | 2014-10-01 |
JPWO2014136877A1 (ja) | 2017-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI616428B (zh) | High purity 2-fluorobutane and method of use thereof | |
JP6788176B2 (ja) | ドライエッチングガスおよびドライエッチング方法 | |
JP2014185111A (ja) | 高純度2,2−ジフルオロブタン | |
TWI653213B (zh) | High-purity 1-fluorobutane and plasma etching method | |
KR101962191B1 (ko) | 플라즈마 에칭 가스 및 플라즈마 에칭 방법 | |
US9984896B2 (en) | High-purity fluorinated hydrocarbon, use as a plasma etching gas, and plasma etching method | |
JP2015038054A (ja) | 2−フルオロブタンの精製方法 | |
JP2018093233A (ja) | ドライエッチング方法 | |
US10472308B2 (en) | Butene conversion method and monofluorobutane purification method | |
JP6551064B2 (ja) | 2−フルオロブタン又は2,2−ジフルオロブタンの精製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |