TWI614326B - 半導體背面用薄膜 - Google Patents
半導體背面用薄膜 Download PDFInfo
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- TWI614326B TWI614326B TW105129835A TW105129835A TWI614326B TW I614326 B TWI614326 B TW I614326B TW 105129835 A TW105129835 A TW 105129835A TW 105129835 A TW105129835 A TW 105129835A TW I614326 B TWI614326 B TW I614326B
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- adhesive layer
- film
- semiconductor
- semiconductor wafer
- layer
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Landscapes
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- Chemical & Material Sciences (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Mechanical Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
Abstract
本發明係一種半導體背面用薄膜,其課題為提供:可防止半導體晶圓或半導體晶片之彎曲同時,可防止剝落或迴焊裂化之產生之半導體保護用薄膜。
解決手段為本發明之半導體保護用薄膜,係其特徵為具有:為了貼合於半導體晶片的背面之金屬層,和為了連接前述金屬層於前述半導體晶片的背面之接著劑層,而在接著於前述接著劑層之前述半導體晶片側的面,及與前述金屬劑層連接側的面之表面自由能量則同時為35mJ/m2以上,而在B階段之前述接著劑層與前述金屬層之剝離力為0.3N/25mm以上者。
Description
本發明係有關半導體背面用薄膜,特別是有關為了貼合於以倒裝(face down)方式加以安裝之半導體晶片背面之半導體背面用薄膜。
近年,加以更一層要求半導體裝置及其封裝的薄型化,小型化。加以進行使用稱為所謂倒裝(face down)方式之安裝法的半導體裝置之製造。在倒裝方式中,使用為了對於電路面確保導通之稱為突起電極的凸狀之電極所成之半導體晶片,使電路面反轉(face down),成為將電極連接於基板之構造(所謂,覆晶連接)。在如此之半導體裝置中,有經由半導體背面用薄膜而保護半導體晶片的背面,而防止半導體晶片的損傷等之情況(參照專利文獻1)。另外,亦有對於此半導體背面用薄膜而言,施以雷射標識,而提高製品之識別性等之情況(參照專利文獻2)。
作為覆晶連接之代表性的步驟係將加以形成於連接半導體背面用薄膜之半導體晶片表面之焊錫突起電
極等浸漬於助熔劑,之後使突起電極與加以形成於基板上之電極(因應必要而亦於此電極上,加以形成焊錫突起電極)接觸,最後使焊錫突起電極熔融而使焊錫突起電極與電極進行迴焊。助熔劑係將附上焊錫時之焊錫突起電極的洗淨或氧化的防止,焊錫之潤濕性的改善等作為目的而加以使用。經由以上的步驟,可構築半導體晶片與基板之間的良好之電性連接者。
在此,助熔劑係通常,僅使其附著於突起電極部分,但經由作業環境係有附著於貼覆在半導體晶片的背面之背面用薄膜之情況。並且,當保持附著有助熔劑於背面用薄膜而進行迴焊連接時,在背面用薄膜表面產生有來自助熔劑之污痕,而有外觀性或雷射標識性降低之虞。
因此,作為即使附著有助熔劑,亦可防止污痕產生,可製造對於外觀性優越之半導體裝置的半導體背面用薄膜,加以提案有具備:接著劑層,和加以層積於此接著劑層上之保護層,而以玻璃轉移溫度為200℃以上之耐熱性樹脂或金屬而構成保護層之半導體背面用薄膜(參照專利文獻3)。
[專利文獻1]日本特開2007-158026號公報
[專利文獻2]日本特開2008-166451號公報
[專利文獻3]日本特開2012-033626號公報
如上述專利文獻1或專利文獻2,經由放射線或熱而使包含放射線硬化性成分或熱硬化性成分之樹脂加以硬化,形成保護膜之情況,硬化後之保護膜與半導體晶圓之熱膨脹係數差為大之故,而對於加工途中之半導體晶圓或半導體晶片產生有彎曲的問題。本申請發明者們進行檢討的結果,了解到如專利文獻3,經由金屬而形成保護層之情況係亦有助於半導體晶圓或半導體晶片之彎曲防止者。
但,為了接著金屬的保護層於半導體晶圓之接著劑層的接著力並不充分,而接著劑的應力緩和則並不充分之情況,半導體晶圓或半導體晶片之間,或者接著劑層與保護層之間的接著則成為不安定。其結果,於半導體晶圓的切割時,在半導體晶圓或接著層與接著層之間或者接著劑層與保護層之間產生剝離,而對於半導體晶片產生有剝落(缺口)之問題。另外,於封裝時,對於半導體晶片與接著層之間或者接著劑層與保護層之間產生有迴焊裂化,而有信賴性降低之問題。
因此,本發明係其課題為提供:防止半導體晶圓或半導體晶片之彎曲同時,可防止剝落或迴焊裂化之產生的半導體背面用薄膜。
為了解決以上的課題,有關本發明之半導體背面用薄膜係其特徵為具有:為了貼合於半導體晶片的背面之金屬層,和為了連接前述金屬層於前述半導體晶片的背面之接著劑層,而在接著於前述接著劑層之前述半導體晶片側的面,及與前述金屬劑層連接側的面之表面自由能量則同時為35mJ/m2以上,而在B階段之前述接著劑層與前述金屬層之剝離力為0.3N/25mm以上者。
前述半導體背面用薄膜係前述接著劑層的吸水率為1.5vol%以下者為佳。
另外,前述半導體背面用薄膜係前述接著劑層的飽和吸濕率為1.0vol%以下者為佳。
另外,前述半導體背面用薄膜係前述接著劑層的殘存揮發分為3.0wt%以下者為佳。
另外,前述半導體背面用薄膜係具有擁有基材薄膜與黏著劑層之切割膠帶,於前述黏著劑層上加以設置前述金屬層者為佳。
另外,前述半導體背面用薄膜,係前述黏著劑層則為經由放射線的照射而黏著力降低之放射線硬化型黏著劑層者為佳。
如根據本發明,可防止半導體晶圓或半導體
晶片之彎曲同時,可防止剝落或迴焊裂化之產生者。
10‧‧‧半導體背面用薄膜
11‧‧‧基材薄膜
12‧‧‧黏著劑層
13‧‧‧切割膠帶
14‧‧‧金屬層
15‧‧‧接著劑層
圖1係模式性地顯示有關本發明之實施形態的半導體背面用薄膜之構造的剖面圖。
圖2係為了說明有關本發明之實施形態的半導體背面用薄膜之使用方法的剖面圖。
以下,對於本發明之實施形態,詳細地加以說明。
圖1係顯示有關本發明之實施形態的半導體背面用薄膜10之剖面圖。本實施形態之半導體背面用薄膜10係切割膠帶一體型之半導體背面用薄膜10。此半導體背面用薄膜10係具有基材薄膜11,和加以設置於基材薄膜11上之黏著劑層12所成之切割膠帶13,而對於黏著劑層12上,係加以設置有為了保護半導體晶片C(參照圖2)之金屬層14,和加以設置於金屬層14上之接著劑層15。
接著劑層15係與接觸於金屬層14的面相反側的面則經由間隔件(剝離襯墊)而加以保護者為佳(未圖示)。間隔件係具有作為提供實用為止保護接著劑層15之保護材之機能。另外,切割膠帶一體型之半導體背面用薄
膜10之情況,間隔件係可作為貼合金屬層14於切割膠帶13之基材薄膜11上的黏著劑層12時之支持基材而使用者。
黏著劑層12,金屬層14及接著劑層15係配合使用工程或裝置而預先切斷(按規格裁切)成特定形狀亦可。更且,本發明之半導體背面用薄膜10係亦可為切斷為各半導體晶圓W1片分之形態,而將加以複數形成切斷為各半導體晶圓W1片分者之長尺的薄片,捲成為滾軸狀的形態亦可。在以下,對於各構成要素加以說明。
作為基材薄膜11係如為以往公知的構成,可未特別地限制而使用,但對於作為後述之黏著劑層12而使用放射線硬化性的材料之情況,係使用具有放射線透過性之構成者為佳。
例如,作為其材料,可列舉聚乙烯,聚丙烯,乙烯-丙烯共聚物,聚丁烯-1,聚-4-甲基戊烯-1,乙烯/醋酸乙烯酯共聚物,乙烯-丙烯酸乙基共聚物,乙烯-丙烯酸甲基共聚物,乙烯-丙烯酸共聚物,離子聚合物等之α-烯烴之單獨聚合物或共聚物,或者此等之混合物,聚氨酯,苯乙烯-乙烯-丁烯或戊烯共聚物,聚醯胺-聚醇共聚物等之熱可塑性合成橡膠,及此等混合物者。另外,基材薄膜11係亦可為加以混合選自此等的群之2種以上的材料者,而此等則加以作為單層或複層化者亦可。
基材薄膜11之厚度係無特別加以限定者,而適宜地作設定即可,但50~200μm為佳。
為了使基材薄膜11與黏著劑層12之密著性提升,於基材薄膜11的表面,施以鉻酸處理,臭氧暴露,火焰暴露,高壓電擊暴露,離子化放射線處理等之化學性或物理性表面處理。
另外,在本實施形態中,於基材薄膜11上方,直接設置黏著劑層12,但藉由為了提升密著性之底漆層,或為了切割時之切削性提升之固定層,應力緩和層,靜電防止層等而間接性地設置亦可。
作為使用於黏著劑層12之樹脂,係無特別加以限定者,而可使用加以使用於黏著劑之公知的氯化聚丙烯樹脂,丙烯酸樹脂,聚酯樹脂,聚氨酯樹脂,環氧樹脂等。對於黏著劑層12之樹脂係適宜調配丙烯酸系黏著劑,放射線聚合性化合物,光聚合開始劑,硬化劑等而調製黏著劑者為佳。黏著劑層12之厚度係無特別加以限定者,而適宜地作設定即可,但5~30μm為佳。
可將放射線聚合性化合物調配於黏著劑層12,經由放射線硬化而容易自金屬層14剝離者。其放射線聚合性化合物係例如,加以使用於經由光照射而可得到三次元網狀化之分子內至少具有2個以上光聚合碳-碳雙重結合之低分量化合物。
具體而言,係可適用三羥甲基丙烷三丙烯酸酯,三丙烯酸季戊四醇酯,四丙烯酸季戊四醇酯,二季戊四醇單羥基丙烯酸酯,雙季戊四醇六丙烯酸酯,1,4-丁二醇二丙烯酸酯,1,6-己二醇二丙烯酸酯,聚乙二醇雙丙烯酸酯,或寡酯丙烯酸酯等。
另外,除了如上述之丙烯酸酯系化合物之外,亦可使用胺基甲酸酯丙烯酸酯系寡聚物者。胺基甲酸酯丙烯酸酯系寡聚物係於使聚酯型或聚醚型等之聚醇化合物,與多價異氰酸酯化合物(例如,2,4-甲苯二異氰酸酯,2,6-甲苯二異氰酸酯,1,3-苯二甲撐二異氰酸酯,1,4-苯二甲撐二異氰酸酯,二苯甲烷4,4-二異氰酸酯等)反應所得到之末端異氰酸酯氨基甲酸乙酯預聚物,使具有羥基之丙烯酸酯或者甲基丙烯酸酯(例如,2-羥乙基甲基丙烯酸酯,2-甲基丙烯酸羥乙酯,2-丙烯酸羥丙酯,2-甲基丙烯酸羥丙酯,聚乙二醇丙烯酸酯,聚乙二醇甲基丙烯酸酯等)反應而加以得到。黏著劑層12係亦可為加以混合選自上述樹脂之2種類以上者。
使用光聚合開始劑之情況,例如可使用異丙基安息香乙醚,異丁烯安息香乙醚,二苯甲酮,米希勒酮,氯噻噸酮,十二烷基噻噸酮,二甲基噻噸酮,二乙基噻噸酮,安息香二甲醚,α-羥基環己基苯基甲酮,2-羥基甲基苯基丙烷等者。此等光聚合開始劑的調配量係對於丙烯酸系共聚物100質量份而言,0.01~5質量份為佳。
作為構成金屬層14之金屬係未特別加以限定,而例如,選自不鏽鋼,鋁,鐵,鈦,錫及銅所成的群之至少1種者,則從雷射標識性的點為佳。在此等之中,從防止半導體晶圓W或者半導體晶片C的彎曲的觀點,不鏽鋼則特別理想。
金屬層14之厚度係考慮半導體晶圓W或者半導體晶片C之彎曲的防止及加工性等而可作適宜決定,通常為2~200μm之範圍,而3~100μm者為佳,4~80μm者為更佳,5~50μm者為特別理想。金屬層係成為200μm以上時,捲曲則變為困難,而成為50μm以上時,自加工性的問題而生產性則降低。另一方面,作為彎曲抑制的效果,最低至少必須為2μm以上。
接著劑層15係預先將接著劑作為薄膜化之構成,而在接著於半導體晶片C側的面及與金屬層14接著側的面之表面自由能量,則同時為35mJ/m2以上。在本發明中,表面自由能量係作為測定水及二碘甲烷之接觸角(液滴容量:水2μL、二碘甲烷3μL、讀取時間:滴下30秒後),自以下式所算出的值。接著於半導體晶片C側的面之表面自由能量係在使用前加以貼合間隔件等於接著於半導體晶片C側的面之情況,係剝離此之後的表面自由能
量,而與金屬層14接著側的面之表面自由能量係剝離金屬層14之後的表面自由能量。
γ s :表面自由能量
θ H :對於固體表面而言之水的接觸角
θ I :對於固體表面而言之二碘甲烷之接觸角
在接著於接著劑層15之半導體晶片C側的面及與金屬層14接著側的面之表面自由能量則不足35mJ/m2時,潤濕性則不充分之故而容易產生進入有空隙之同時,金屬層14與接著層15之密著性則成為不充分,而於半導體晶片C與接著劑層15之間或者接著劑層15與金屬層14之間產生有迴焊裂化,而信賴性則降低。在接著於接著劑層15之半導體晶片C側的面及與金屬層14接著側的面之表面自由能量係55mJ/m2以下為實用性。
另外,接著劑層15係在B階段(未硬化狀態或半硬化狀態)中,與金屬層14之剝離力(23℃、剝離角度180度、線速300mm/分)則為0.3N/25mm以上。剝離力則不足0.3N/25mm時,於半導體晶圓W之切割時,在半導體晶圓W或半導體晶片C與接著劑層15之間或者接著劑層15與金屬層14之間產生有剝離,而對於半導體晶片C產生有剝落(缺口)。
接著劑層15之吸水率係為1.5vol%以下者為佳。吸水率之測定方法係如以下。即,將50×50mm尺寸之接著劑層15(薄膜狀接著劑)作為取樣,使取樣,在真空乾燥機中,以120℃,進行3小時乾燥,在乾燥器中放冷後,測定乾燥質量而作為M1。將取樣,以室溫浸漬24小時於蒸餾水之後取出,以濾紙擦拭取樣表面,馬上進行秤量而作為M2。吸水率係經由下式(1)而加以算出。
吸水率(vol%)=[(M2-M1)/(M1/d)]×100 (1)在此,d係薄膜之密度。
當吸水率超出1.5vol%時,經由吸水的水分,在焊錫迴焊時,有產生迴焊裂化之虞。
接著劑層15之飽和吸濕率係為1.0vol%以下者為佳。飽和吸濕率之測定方法係如以下。即,將直徑100mm之圓形之接著劑層15(薄膜狀接著劑)作為取樣,使取樣,在真空乾燥機中,以120℃,進行3小時乾燥,在乾燥器中放冷後,測定乾燥質量而作為M1。將取樣,在85℃、85%RH的恆溫恆濕槽中進行168小時吸濕之後取
出,馬上進行秤量而作為M2。飽和吸濕率係經由下式(2)而加以算出。
飽和吸濕率(vol%)=[(M2-M1)/(M1/d)]×100 (2)在此,d係薄膜之密度。
當飽和吸濕率超出1.0vol%時,經由迴焊時之吸濕而蒸氣壓的值則變高,無法得到良好的迴焊特性。
接著劑層15之殘存揮發分係為3.0wt%以下者為佳。殘存揮發分之測定方法係如以下。即,將50×50mm尺寸之接著劑層15(薄膜狀接著劑)作為取樣,測定取樣之初期的質量而作為M1,將取樣,在熱風循環恆溫槽中,以200℃進行2小時加熱後,進行秤量而作為M2。殘存揮發分係經由下式(3)而加以算出。
殘存揮發分(wt%)=[(M2-M1)/M1]×100 (3)
當殘存揮發分超出3.0wt%時,經由封裝時之加熱而溶媒則產生揮發,於接著劑層15之內部產生有空隙,而成為封裝破裂之要因。
對於接著劑層15,係例如,可使用加以使用於接著劑之公知的聚醯亞胺樹脂,聚醯胺樹脂,聚醚醯亞胺樹脂,聚醯胺醯亞胺樹脂,聚酯樹脂,聚亞醯胺酯樹脂,苯氧基樹脂,聚碸樹脂,聚醚碸樹脂,聚苯硫醚樹脂,聚二醚酮樹脂,氯化聚丙烯樹脂,丙烯酸樹脂,聚氨酯樹脂,環氧樹脂,聚丙烯醯胺樹脂,三聚氰胺樹脂等或其混合物,但從接著劑層15之接著性與信賴性的觀點,包含丙烯酸系共聚物,環氧樹脂,而丙烯酸系共聚物之
Tg為0℃以上40℃以下、重量平均分子量為10萬以上100萬以下者為佳。更理想之重量平均分子量為60萬以上90萬以下。
然而,重量平均分子量係作為經由膠凝體色層分析(GPC)法而使用經由標準聚苯乙烯之檢量曲線而測定者。
使用機器:高速液體層析儀LC-20AD[日本島津製作所(股份有限公司)製、商品名]
圓柱體:Shodex Colμmn GPC KF-805[日本島津製作所(股份有限公司)、商品名]
溶析液:三氯甲烷
測定溫度:45℃
流量:3.0ml/min
RI檢出器:RID-10A
丙烯酸系共聚物之聚合方法係無特別限制,例如,可舉出珠狀聚合,溶液聚合,懸浮聚合等,經由此等方法而得到共聚物。耐熱性優越之故而懸浮聚合為佳,作為如此之丙烯酸系共聚物,係例如,可舉出ParacronW-197C(日本根上工業股份有限公司製、商品名)。
丙烯酸系共聚物係包含丙烯腈者為佳。對於丙烯酸系共聚物而言,理想為10~50質量%、更理想為20~40質量%則為丙烯腈。由丙烯腈為10質量%以上者,可提升接著劑層15之Tg,而使接著性提升者,但為50質量%以上
時,接著劑層15之流動性變差,而有接著性下降之情況。經由含有丙烯腈之懸浮聚合的丙烯酸系共聚物者則特別理想。
丙烯酸系共聚物係為了使接著性提升,而具有官能基亦可。作為官能基係雖無特別加以限定者,例如,可舉出胺基,胺甲酸乙酯基,醯亞胺基,氫氧基,羧基,環氧丙基等,其中,氧化丙烯基為佳。氧化丙烯基係與熱硬化樹脂之環氧的反應性為佳,而與氫氧基等比較時,不易與黏著劑層12反應之故,而不易引起表面自由能量的變化。
接著劑層15係含有無機填充物亦可,但當添加量為多時,流動性則下降,而接著性降低之故而不足40質量%為佳,更理想為不足20質量%,又更理想為不足15質量%。另外,粒徑為大時,於接著面的表面產生凹凸,而接著性下降之故,平均粒徑不足1μm為佳,而更理想為不足0.5μm,而又更理想為不足0.1μm。對於無機填充物之粒徑的下限無特別限制,但為0.003μm以上情況則為實際性。
為了控制表面自由能量,而將矽烷偶合劑或鈦酸酯偶合劑,或氟接枝共聚物作為添加劑而加上亦可。含有硫氫基或氧化丙烯基者為佳。
接著劑層15之厚度係雖無特別限制者,通常3~100μm為佳,而5~20μm更佳。
對於金屬層14之線膨脹係數之接著劑層15
之線膨脹係數而言的比(金屬層14之線膨脹係數/接著劑層15之線膨脹係數)係為0.2以上者為佳。當該比不足0.2時,成為在金屬層14與接著劑層15之間容易產生剝離,而在封裝時,產生有迴焊破裂,而有信賴性降低之虞。
在本實施形態中,於黏著劑層12上直接性地設置金屬層14,但藉由為了使拾取性提升之剝離層,或半導體晶片C,金屬層14,與接著劑層15同時自黏著劑層12剝離而為了賦予機能於半導體晶片C之機能層(例如,散熱層等),間接性地設置亦可。另外,於金屬層14與接著劑層15之間設置機能層亦可。
間隔件係將接著劑層15之處理性作為良好之同時,為了保護接著劑層15的構成。作為間隔件係可使用聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烴(PP、PE)系、共聚物(EVA、EEA、EBA)系、另外將此等材料作一部分置換,更提升接著性或機械性強度之薄膜者。另外,亦可為此等之薄膜的層積體。
間隔件之厚度係無特別加以限定者,而適宜地作設定即可,但25~50μm為佳。
對於有關本實施形態之切割膠帶一體型之半導體背面
用薄膜10之製造方法加以說明。首先,接著劑層15係可利用調製樹脂組成物,而形成為薄膜狀的層之慣用方法而形成者。具體而言,例如,可舉出於適當的間隔件(剝離紙等)上,塗佈前述樹脂組成物而進行乾燥(在熱硬化為必要之情況等中,因應必要而施以加熱處理進行乾燥),形成接著劑層15之方法等。前述樹脂組成物係亦可為溶液,以及分散液。接著,貼合所得到之接著劑層15與另外準備之金屬層14。作為金屬層14係如使用市售的金屬箔即可。之後,使用壓切刀而將接著劑層15及金屬層14按規格裁切為特定尺寸之圓形標籤形狀,除去周邊的不需要部分。
接著,製作切割膠帶13。基材薄膜11係可經由以往公知的製膜方法而進行製膜者。作為該製膜方法係例如,可例示日曆製膜法,在有機溶媒中之鑄造法,在密閉系統之充氣壓出法,T字模壓出法,共壓出法,乾式層疊法等。接著,於基材薄膜11上塗佈黏著劑組成物,使其乾燥(因應必要而使其加熱交聯)而形成黏著劑層12。作為塗佈方式係可舉出滾輪塗工,網版印刷塗工,凹版印刷塗工等。然而,將黏著劑層12組成物直接塗佈於基材薄膜11,而於基材薄膜11上形成黏著劑層12亦可,另外,將黏著劑組成物,塗佈於對於表面進行剝離處理之剝離紙等而使黏著劑層12形成之後,使該黏著劑層12轉印於基材薄膜11亦可。經由此,加以製作形成黏著劑層12於基材薄膜11上之切割膠帶13。
之後,金屬層14與黏著劑層12則呈接觸地,於加以設置有圓形之金屬層14及接著劑層15之間隔件,疊層切割膠帶13,而根據情況係切割膠帶13亦經由按規格裁切為特定尺寸之圓形標籤形狀等之時,加以製作切割膠帶一體型之半導體背面用薄膜10。
接著,對於使用本實施形態之切割膠帶一體型之半導體背面用薄膜10而製作半導體裝置之方法,參照圖2同時加以說明。
半導體裝置之製造方法係至少具備:於切割膠帶一體型之半導體背面用薄膜10上,貼著半導體晶圓W之工程(裝入工程),和切割半導體晶圓W而形成半導體晶片C之工程(切割工程),和將半導體晶片C,與半導體背面用薄膜10同時,自切割膠帶13之黏著劑層12剝離之工程(拾取工程),和將半導體晶片C覆晶連接於被著體16上工程(覆晶連接工程)。
首先,適宜地剝離任意地加以設置於切割膠帶一體型之半導體背面用薄膜10上之間隔件,如在圖2(A)所示地,將接著劑層15貼著於半導體晶圓W,使其接著保持而固定(裝入工程)。此時,接著劑層15係位於未硬化狀態(包含半硬化狀態)。另外,切割膠帶一體型之半導體背
面用薄膜10係加以貼著於半導體晶圓W之背面。半導體晶圓W之背面係指:意味與電路面相反側的面(亦稱為非電路面,非電極形成面等)。貼著方法係無特別加以限定,但經由壓著之方法為佳。壓著係通常,經由壓著滾輪等之按壓手段而按壓同時加以進行。
接著,如在圖2(B)所示地,進行半導體晶圓W之切割。經由此,將半導體晶圓W切斷為特定的尺寸而作為個片化(小片化),製造半導體晶片C。切割係例如,自半導體晶圓W之電路面側,依照常用方法而加以進行。另外,在本工程中,例如,可採用至半導體背面用薄膜10為止進行切入之稱為全切割之切斷方式等。作為在本工程所使用之切割裝置係無特別加以限定,而可使用以往公知者。另外,半導體晶圓W係因經由半導體背面用薄膜10而以優越的密著性加以接著固定之故,可抑制晶片缺陷或晶片飛散之同時,亦可抑制半導體晶圓W之破損。然而,進行切割膠帶一體型之半導體背面用薄膜10之擴充之情況,該擴充係可使用以往公知的擴充裝置而進行者。
如在圖3(C)所示,進行半導體晶片C之拾取,將半導體晶片C,與接著劑層15及金屬層14同時,使其自切
割膠帶13剝離。作為拾取之方法係無特別加以限定,而可採用以往公知的各種方法。例如,可舉出經由針狀物,自半導體背面用薄膜10之基材薄膜11側,將各個半導體晶片C往上頂,將往上頂之半導體晶片C,經由拾取裝置而拾取之方法等。然而,所拾取之半導體晶片C係其背面則經由金屬層14而加以保護。
所拾取之半導體晶片C係如在圖3(D)所示,於基板等之被著體16,經由覆晶接合方式(覆晶安裝方式)而使其固定。具體而言,將半導體晶片C,在半導體晶片C之電路面(亦稱為表面,電路圖案形成面,電極形成面等)則與被著體16對向的形態,於被著體16,依照常用方法而使其固定。例如,首先,於作為加以形成於半導體晶片C之電路面側的連接部之突起電極17,使助熔劑附著。接著,經由使半導體晶片C之突起電極17,接觸於由被著體16之連接墊片所被著之接合用的導電材18(焊錫等)而按壓之同時,使突起電極17及導電材18熔融之時,確保半導體晶片C與被著體16之電性導通,而可使半導體晶片C固定於被著體16(覆晶接合工程)。此時,對於半導體晶片C與被著體16之間係加以形成有空隙,而其空隙間距離係一般為30μm~300μm程度。然而,將半導體晶片C覆晶接合(覆晶連接)於被著體16上之後,洗淨除去殘存於半導體晶片C與被著體16之對向面或間隙之助熔劑,
而於該間隙,使封閉材(封閉樹脂等)充填而封閉。
作為被著體16係可使用引線架或電路基板(配線電路基板等)等之各種基板者。作為如此之基板的材質係無特別加以限定者,但可舉出陶瓷基板,塑料基板等。作為塑料基板係例如,可舉出環氧基板,雙馬來酸酐縮亞胺三嗪基板,聚醯亞胺基板等。
在本實施形態中,對於切割膠帶一體型之半導體背面用薄膜10加以說明過,但即使未與切割膠帶13作為一體化亦可。接著劑層15及金屬層14則未加以層積於切割膠帶13之半導體背面用薄膜之情況,與接著劑層15之金屬層14接觸面的相反側的面係經由具有剝離層之間隔件而加以保護者為佳。在使用時係適宜剝離間隔件,於接著劑層15貼合半導體晶圓W之背面。接著劑層15及金屬層14則未加以按規格裁切為特定形狀的情況,係將切斷成特定形狀,所得到之層積體之金屬層14側,貼合於另外個體之切割膠帶的黏著劑層,再與上述之切割工程之後的工程同樣作為,製造半導體裝置即可。
接著,為了將本發明之效果作為更明確,而對於實施例及比較例加以詳細說明,但本發明係未加以限定於此等實施例者。
首先,對於含於有關各實施例及各比較例之半導體背面用薄膜之接著劑層的丙烯系聚合物之製作方法加以說明。
於具備攪拌機之玻璃製之四口圓底燒瓶,放入水300質量份,作為分散安定劑而溶解聚乙烯醇0.7質量份,經由攪拌翼而以300rpm進行攪拌同時,作為丙烯酸乙酯65質量份,丙烯酸丁酯23質量份,甲基丙烯酸環氧丙酯2質量份,丙烯晴12質量份所成之單量體混合物與聚合開始劑,而一次投入N,N’-偶氮二異丁腈1質量份,作成懸浮液。
使此,在攪拌繼續下,使反應系統內升溫至68℃,4小時保持為一定而加以反應。之後,冷卻至室溫(約25℃)為止。接著,固液分離反應物,以水充分地洗淨之後,使用乾燥機而以70℃進行12小時乾燥,接著,加上2-丁酮而固形分則呈成為15%而進行調整,得到丙烯系聚合物(1)。自調配比加以計算之Tg係為-22℃。此聚合物之重量平均分子量係40萬,分散度係3.8。重量平均分子量係作為經由膠凝體色層分析(Gel Permeation Chromatography:GPC)法而使用經由標準聚苯乙烯之檢量曲線而測定者。
將丙烯酸乙酯作為43質量份,丙烯酸丁酯作為15質
量份,甲基丙烯酸環氧丙酯作為5質量份,丙烯晴作為37質量份以外,係經由與丙烯系聚合物(1)同樣的製作法而製作丙烯系聚合物(2)。自調配比加以計算之Tg係為12℃。經由此聚合物之膠凝體色層分析法的重量平均分子量係70萬,分散度係3.6。
將丙烯酸乙酯作為43質量份,丙烯酸丁酯作為15質量份,甲基丙烯酸環氧丙酯作為5質量份,丙烯晴作為36質量份,加上變性矽離子1質量份以外,係經由與丙烯系聚合物(1)同樣的製作法而製作丙烯系聚合物(3)。自調配比加以計算之Tg係為12℃。經由此聚合物之膠凝體色層分析法的重量平均分子量係60萬,分散度係4.0。
將丙烯酸乙酯作為34質量份,丙烯酸丁酯作為15質量份,甲基丙烯酸環氧丙酯作為2質量份,丙烯晴作為49質量份以外,係經由與丙烯系聚合物(1)同樣的製造法而製作丙烯系聚合物(4)。自調配比加以計算之Tg係為21℃。經由此聚合物之膠凝體色層分析法的重量平均分子量係12萬,分散度係2.3。
對於上述丙烯系聚合物(1)100質量份而言,甲酚酚醛清漆型環氧樹脂(環氧當量197、分子量1200、軟化點70℃)25質量份、二甲苯撐基酚醛樹脂(氫氧基當量104、軟化點80℃)60質量份,作為充填材而加上平均粒徑0.045μm之二氧化矽填充料20質量份而得到熱硬化性的接著劑組成物。將此接著劑組成物,塗佈於構成間隔件之PET薄膜,以120℃進行10分鐘加熱乾燥,形成乾燥後之厚度20μm之B階段狀態的塗膜,而得到PET薄膜/接著劑層(1)/PET薄膜之層積體。
然而,PET薄膜係使用加以矽釋放處理之PET薄膜(日本帝人:HYUPIREKUSUS-314(商品名)、厚度25μm)。
取代上述丙烯系聚合物(1)而使用丙烯系聚合物(2)以外係以與接著劑層(1)同樣的方法,得到接著劑層(2)。
取代上述丙烯系聚合物(1)而使用丙烯系聚合物(3)以外係以與接著劑層(1)同樣的方法,得到接著劑層(3)。
取代上述丙烯系聚合物(1)而使用丙烯系聚合物(4)以外係以與接著劑層(1)同樣的方法,得到接著劑層(4)。
將與接著劑層(1)同樣的接著劑組成物,塗佈於構成間隔件之PET薄膜,以120℃進行6分鐘加熱乾燥以外,係以與接著劑層(1)同樣的方法,得到接著劑層(5)。
使丙烯酸丁酯65質量份,2-甲基丙烯酸羥乙酯25質量份,丙烯酸10質量份自由基聚合,而於使2-甲基丙烯酸異氰基乙酯滴下反應而合成之重量平均分子量80萬的丙烯酸共聚物,作為硬化劑而加上聚異氰酸酯3質量份,作為光聚合開始劑而加上1-羥基環己基苯基酮1質量份而混合,作為黏著劑層組成物(1)。
於丙烯酸2-乙基己基77質量份,2-丙烯酸羥丙酯23質量份聚合之重量平均分子量80萬的丙烯酸共聚物,作為硬化劑而加上聚異氰酸酯3質量份而混合,作為黏著劑層組成物(2)。
於丙烯酸2-乙基己基77質量份,2-丙烯酸羥丙酯23質量份聚合之重量平均分子量80萬的丙烯酸共聚物,作
為添加劑而加上變性矽離子3質量份,作為硬化劑而加上聚異氰酸酯3質量份而混合,作為黏著劑層組成物(3)。
將所製作之黏著劑層組成物(1),乾燥膜厚則呈成為10μm地,塗佈於構成間隔件之PET薄膜,以120℃進行3分鐘乾燥。由使塗工於此PET薄膜之黏著劑層組成物,轉印於基材薄膜之厚度100μm之聚丙烯-合成橡膠(PP:HSBR=80:20之合成橡膠)樹脂薄膜上者,製作切割膠帶(1)。然而,聚丙烯(PP)係使用Japan Polychem Corporation製之NOVATECFG4(商品名),而氫添加苯乙烯丁二烯(HSBR)係使用日本JSR股份有限公司製之DYNARON1320P(商品名)。另外,PET薄膜係使用加以矽釋放處理之PET薄膜(日本帝人:HYUPIREKUSUS-314(商品名)、厚度25μm)。
取代於黏著劑層組成物(1),而使用黏著劑層組成物(2)以外係與切割膠帶(1)同樣作為而製作切割膠帶(2)。另外,取代於黏著劑層組成物(1),而使用黏著劑層組成物(3)以外係與切割膠帶(1)同樣作為而製作切割膠帶(3)。
(5)切割膠帶一體型之半導體背面用薄膜之製
作。
疊層貼合如以上作為所得到之接著劑層(1)與50μm厚之SUS304製金屬箔而得到層積體,更且層積體之接著劑層則呈與黏著劑層接觸地貼合黏著薄膜(1)與層積體,得到依基材薄膜,黏著劑層,金屬層,接著劑層,間隔件的順序加以層積之附有間隔件之半導體背面用薄膜。將此半導體背面用薄膜作為實施例1之取樣。
使用所得到之上述接著層(2)與黏著薄膜(2),以與實施例1同樣的方法而作成實施例2之半導體背面用薄膜。
使用所得到之上述接著層(3)與黏著薄膜(2),作為金屬層而使用50μm厚之銅箔,以與實施例1同樣的方法而作成實施例3之半導體背面用薄膜。
使用所得到之上述接著層(4)與黏著薄膜(3),以與實施例1同樣的方法而作成比較例1之半導體背面用薄膜。
使用所得到之上述接著層(1)與黏著薄膜(1),接著層與黏著層則呈接觸地貼合,得到依基材薄膜,黏著劑層,接著劑層,間隔件的順序加以層積之附有間隔件之半導體背面用薄膜。將此半導體背面用薄膜作為比較例2之取樣。
使用所得到之上述接著層(5)與黏著薄膜(2),作為金屬層而使用50μm厚之銅箔,以與實施例1同樣的方法而作成比較例3之半導體背面用薄膜。
對於有關實施例1~3及比較例1~3之半導體背面用薄膜,進行以下的測定,評估。將其結果示於表1。
在有關上述實施例,比較例之半導體背面用薄膜的接著劑層中,將自間隔件剝離的面,作為A面,而自金屬層剝落的面作為B面。測定(液滴容量:水2μL、二碘甲烷3μL、讀取時間:滴下後30秒)對於此等A面及B面而言的水及二碘甲烷之接觸角,再從經由測定而加以得到之水及二碘甲烷之接觸角,使用幾何平均法,經由下述的算出式而算出表面自由能量。然而,比較例2係未有金屬層之故而省略測定。
γ s :表面自由能量
θ H :對於固體表面而言之水的接觸角
θ I :對於固體表面而言之二碘甲烷之接觸角
將有關各實施例,比較例之半導體背面用薄膜之接著劑層的間隔件剝落,切割為25mm寬度之長形狀,而製作依基材薄膜與黏著劑層,金屬層,接著劑層的順序加以層積之試驗片。經由2kg之滾輪而貼合形成狀保持膠帶(日本積水化學工業公司製、商品名:FORTE)於接著劑層的表面而製作之試驗片,經由日本東洋精機製作所股份有限公司製之拉張強度試驗機VE10)而分為「切割膠帶及金屬層」,和「接著劑層及補強膠帶」之各層積體而把握,以線速300mm/min而測定接著劑層與金屬層之間的剝離力。然而,剝離力之單位係[N/25mm]。然而,比較例2係
未有金屬層之故而省略測定。
將有關各實施例,比較例之半導體背面用薄膜之接著劑層切斷為50×50mm尺寸而作為取樣,使取樣,在真空乾燥機中,以120℃,進行3小時乾燥,在乾燥器中放冷後,測定乾燥質量而作為M1。將取樣,以室溫浸漬24小時於蒸餾水之後取出,以濾紙擦拭取樣表面,馬上進行秤量而作為M2。經由下式(1)而加以算出吸水率。
吸水率(vol%)=[(M2-M1)/(M1/d)]×100 (1)在此,d係薄膜之密度。
將有關各實施例,比較例之半導體背面用薄膜之接著劑層切斷為直徑100mm之圓形而作為取樣,使取樣,在真空乾燥機中,以120℃,進行3小時乾燥,在乾燥器中放冷後,測定乾燥質量而作為M1。將取樣,在85℃、85%RH的恆溫恆濕槽中進行吸濕之後取出,馬上進行秤量而作為M2。經由下式(2)而加以算出飽和吸濕率。
飽和吸濕率(vol%)=[(M2-M1)/(M1/d)]×100 (2)在此,d係薄膜之密度。
將有關各實施例,比較例之半導體背面用薄膜之接著
劑層切斷為50×50mm尺寸而作為取樣,測定取樣之初期的質量而作為M1,將取樣,在熱風循環恆溫槽中,以200℃進行2小時加熱後,進行秤量而作為M2。經由下式(3)而加以算出殘存揮發分。
殘存揮發分(wt%)=[(M2-M1)/M1]×100 (3)
剝離有關各實施例,比較例之半導體背面用薄膜之間隔件,將接著劑層,以70℃進行10秒加熱貼合於厚度50μm之矽晶圓之後,切割成10mm×10mm之晶片。取出切割成之晶片,計測晶片的缺口,而將缺口尺寸為10μm以下者作為良品而評估為「○」、缺口尺寸為超過10μm者作為不良品而評估為「×」。
剝離有關各實施例,比較例之半導體背面用薄膜之間隔件,將接著劑層,以70℃進行10秒加熱貼合於厚度50μm之矽晶圓之後,切割成10mm×10mm之晶片,將切割成之層積體放置於玻璃基板上。此時,晶片則呈成為玻璃基板側地放置,測定層積體與玻璃板之距離的最大值,作為晶片彎曲量。
剝離有關各實施例,比較例之半導體背面用薄膜之間
隔件,將接著劑層,貼覆於厚度200μm之矽晶圓的背面,將上述的接著劑層(1)更加貼合於矽晶圓的表面,切割成7.5mm×7.5mm之後,於加以銀電鍍處理之引線架上,以溫度160℃、壓力0.1MPa、時間1秒的條件進行裝入。更且,以封閉材(KE-1000SV、日本京瓷股份有限公司製、商品名)進行鑄造,對於各實施例及各比較例而製作各20個之取樣。
將取樣,在85℃/60質量%RH之恆溫恆濕層進行196小時處理之後,於取樣表面之最高溫度則為260℃呈成為20秒而設定之IR(紅外線)迴焊爐,通過取樣,反覆3次經由室溫放置而進行冷卻的處理。對於各實施例及各比較例,對於進行如上述之處理的20個取樣而言,觀察有無破裂,顯示產生有20個之取樣中之破裂之取樣的個數。然而,對於觀察有無破裂時,係使用超音波探査裝置(Scanning Acoustic Tomograph:SAT)而以透過法觀察各取樣,而於各構件間看到剝離者係全作為破裂。
如表1所示,有關實施例1~3之半導體背面用薄膜係在接著於接著劑層之半導體晶片側的面(A面)及與金屬劑層接著側的面(B面)之表面自由能量,則同時為35mJ/m2以上,而在B階段之接著劑層與金屬層之剝離力則為0.3N/25mm以上之故,剝落,晶片彎曲,信賴性(迴焊時裂化)同時成為良好的結果。
對此,有關比較例1之半導體背面用薄膜係在接著於接著劑層之半導體晶片側的面(A面)及與金屬劑層接著側的面(B面)之表面自由能量,則為不足35mJ/m2之故,而產生有迴焊時裂化。另外,有關比較例2之半導體背面用薄膜係未具有金屬層之故,而對於晶片產生有彎曲,因此彎曲而引起而亦產生有迴焊時裂化。有關比較例3之半導體背面用薄膜係在B階段之接著劑層與金屬層之剝離力則不足0.3N/25mm之故,而在切割時,在半導體晶圓或半導體晶片與接著層之間,或者接著劑層與金屬層之間,產生有剝離,而於半導體晶片產生有剝落(缺口),亦產生有迴焊時裂化。
10‧‧‧半導體背面用薄膜
11‧‧‧基材薄膜
12‧‧‧黏著劑層
13‧‧‧切割膠帶
14‧‧‧金屬層
15‧‧‧接著劑層
Claims (6)
- 一種半導體保護用薄膜,其特徵為具有:為了貼合於半導體晶片的背面之金屬層,和為了接著前述金屬層於前述半導體晶片的背面之接著劑層;在前述接著劑層之接著於前述半導體晶片側的面,及與前述金屬劑層接著側的面之表面自由能量則同時為35mJ/m2以上;在B階段之前述接著劑層與前述金屬層之剝離力為0.3N/25mm以上者。
- 如申請專利範圍第1項記載之半導體保護用薄膜,其中,前述接著劑層的吸水率為1.5vol%以下者。
- 如申請專利範圍第1項或第2項記載之半導體保護用薄膜,其中,前述接著劑層的飽和吸濕率為1.0vol%以下者。
- 如申請專利範圍第1項或第2項記載之半導體保護用薄膜,其中,前述接著劑層的殘存揮發分為3.0wt%以下者。
- 如申請專利範圍第1項或第2項記載之半導體保護用薄膜,其中,具有擁有基材薄膜與黏著劑層之切割膠帶;於前述黏著劑層上加以設置前述金屬層者。
- 如申請專利範圍第5項記載之半導體保護用薄膜,其中,前述黏著劑層則為經由放射線的照射而黏著力降低之放射線硬化型黏著劑層者。
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WO2014080918A1 (ja) * | 2012-11-20 | 2014-05-30 | 古河電気工業株式会社 | 半導体チップの製造方法およびそれに用いる薄膜研削用表面保護テープ |
WO2015076236A1 (ja) * | 2013-11-19 | 2015-05-28 | 積水化学工業株式会社 | 半導体接合用接着フィルム |
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2015
- 2015-09-16 JP JP2015182394A patent/JP6265954B2/ja active Active
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2016
- 2016-06-17 WO PCT/JP2016/068031 patent/WO2017047183A1/ja active Application Filing
- 2016-06-17 KR KR1020167035015A patent/KR101870066B1/ko active IP Right Grant
- 2016-06-17 CN CN201680001818.2A patent/CN107078102A/zh active Pending
- 2016-09-13 TW TW105129835A patent/TWI614326B/zh active
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2018
- 2018-02-27 US US15/905,888 patent/US20180190532A1/en not_active Abandoned
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JPH1167699A (ja) * | 1997-08-13 | 1999-03-09 | Texas Instr Japan Ltd | 半導体装置の製造方法 |
US20100109156A1 (en) * | 2008-11-04 | 2010-05-06 | Advanced Chip Engineering Technology Inc. | Back side protective structure for a semiconductor package |
TW201243902A (en) * | 2011-06-24 | 2012-11-01 | Furukawa Electric Co Ltd | Tape for wafer processing |
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TW201712089A (zh) | 2017-04-01 |
WO2017047183A1 (ja) | 2017-03-23 |
JP6265954B2 (ja) | 2018-01-24 |
US20180190532A1 (en) | 2018-07-05 |
KR101870066B1 (ko) | 2018-06-22 |
KR20170048251A (ko) | 2017-05-08 |
JP2017059648A (ja) | 2017-03-23 |
CN107078102A (zh) | 2017-08-18 |
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