TWI612167B - 用以測量一沈積率之方法、沈積控制系統與應用其之蒸發源及沈積設備 - Google Patents

用以測量一沈積率之方法、沈積控制系統與應用其之蒸發源及沈積設備 Download PDF

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Publication number
TWI612167B
TWI612167B TW105119014A TW105119014A TWI612167B TW I612167 B TWI612167 B TW I612167B TW 105119014 A TW105119014 A TW 105119014A TW 105119014 A TW105119014 A TW 105119014A TW I612167 B TWI612167 B TW I612167B
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TW
Taiwan
Prior art keywords
deposition rate
measurement
measuring device
measuring
deposition
Prior art date
Application number
TW105119014A
Other languages
English (en)
Chinese (zh)
Other versions
TW201710536A (zh
Inventor
喬斯曼紐 地古坎柏
海格 藍德葛瑞夫
湯瑪士 寇和
史丹分 班格特
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201710536A publication Critical patent/TW201710536A/zh
Application granted granted Critical
Publication of TWI612167B publication Critical patent/TWI612167B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00—Systems involving sampling of the variable controlled
    • G05B21/02—Systems involving sampling of the variable controlled electric

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW105119014A 2015-06-17 2016-06-16 用以測量一沈積率之方法、沈積控制系統與應用其之蒸發源及沈積設備 TWI612167B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/EP2015/063636 2015-06-17
PCT/EP2015/063636 WO2016202387A1 (fr) 2015-06-17 2015-06-17 Procédé de mesure de taux de dépôt et système de contrôle de taux de dépôt

Publications (2)

Publication Number Publication Date
TW201710536A TW201710536A (zh) 2017-03-16
TWI612167B true TWI612167B (zh) 2018-01-21

Family

ID=53489935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105119014A TWI612167B (zh) 2015-06-17 2016-06-16 用以測量一沈積率之方法、沈積控制系統與應用其之蒸發源及沈積設備

Country Status (5)

Country Link
JP (1) JP6411675B2 (fr)
KR (2) KR20180112123A (fr)
CN (1) CN107709604A (fr)
TW (1) TWI612167B (fr)
WO (1) WO2016202387A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112912533B (zh) * 2018-11-28 2023-10-24 应用材料公司 用于沉积蒸发的材料的沉积源、沉积装置及其方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030140858A1 (en) * 2001-04-20 2003-07-31 Marcus Michael A. Reusable mass-sensor in manufacture of organic light-emitting devices
US20040133387A1 (en) * 2001-07-12 2004-07-08 Thomas Volkel Monitoring of measuring signal, in particular in automation technology
US20090306803A1 (en) * 2008-06-09 2009-12-10 International Business Machines Corporation Method for using real-time apc information for an enhanced lot sampling engine
US20100086681A1 (en) * 2007-03-06 2010-04-08 Tokyo Electron Limited Control device of evaporating apparatus and control method of evaporating apparatus
US20100316788A1 (en) * 2009-06-12 2010-12-16 Applied Materials, Inc. Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793193B2 (ja) * 1990-05-30 1995-10-09 シャープ株式会社 薄膜ｅｌ素子の製造方法
JPH11222670A (ja) * 1998-02-06 1999-08-17 Ulvac Corp 膜厚モニター及びこれを用いた成膜装置
JP4706380B2 (ja) * 2005-08-04 2011-06-22 ソニー株式会社 蒸着装置及び蒸着方法
JP2009185344A (ja) * 2008-02-07 2009-08-20 Sony Corp 蒸着方法、蒸着装置、および表示装置の製造方法
EP2508645B1 (fr) * 2011-04-06 2015-02-25 Applied Materials, Inc. Système d'évaporation avec unité de mesure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030140858A1 (en) * 2001-04-20 2003-07-31 Marcus Michael A. Reusable mass-sensor in manufacture of organic light-emitting devices
US20040133387A1 (en) * 2001-07-12 2004-07-08 Thomas Volkel Monitoring of measuring signal, in particular in automation technology
US20100086681A1 (en) * 2007-03-06 2010-04-08 Tokyo Electron Limited Control device of evaporating apparatus and control method of evaporating apparatus
US20090306803A1 (en) * 2008-06-09 2009-12-10 International Business Machines Corporation Method for using real-time apc information for an enhanced lot sampling engine
US20100316788A1 (en) * 2009-06-12 2010-12-16 Applied Materials, Inc. Deposition rate monitor device, evaporator, coating installation, method for applying vapor to a substrate and method of operating a deposition rate monitor device

Also Published As

Publication number Publication date
KR20180112123A (ko) 2018-10-11
CN107709604A (zh) 2018-02-16
JP2018519415A (ja) 2018-07-19
KR101950959B1 (ko) 2019-02-21
TW201710536A (zh) 2017-03-16
JP6411675B2 (ja) 2018-10-24
WO2016202387A1 (fr) 2016-12-22
KR20170141230A (ko) 2017-12-22

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