JP6411675B2 - 堆積速度を測定するための方法及び堆積速度制御システム - Google Patents

堆積速度を測定するための方法及び堆積速度制御システム Download PDF

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Publication number
JP6411675B2
JP6411675B2 JP2017557378A JP2017557378A JP6411675B2 JP 6411675 B2 JP6411675 B2 JP 6411675B2 JP 2017557378 A JP2017557378 A JP 2017557378A JP 2017557378 A JP2017557378 A JP 2017557378A JP 6411675 B2 JP6411675 B2 JP 6411675B2
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Japan
Prior art keywords
deposition rate
measurement
deposition
evaporation
measuring
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Expired - Fee Related
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JP2017557378A
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English (en)
Japanese (ja)
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JP2018519415A (ja
Inventor
ホセ マヌエル ディエゲス−カンポ，
ホセ マヌエル ディエゲス−カンポ，
ハイケ ランドグラフ，
ハイケ ランドグラフ，
トーマス コック，
トーマス コック，
シュテファン バンゲルト，
シュテファン バンゲルト，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2018519415A publication Critical patent/JP2018519415A/ja
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Publication of JP6411675B2 publication Critical patent/JP6411675B2/ja
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B21/00—Systems involving sampling of the variable controlled
    • G05B21/02—Systems involving sampling of the variable controlled electric

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2017557378A 2015-06-17 2015-06-17 堆積速度を測定するための方法及び堆積速度制御システム Expired - Fee Related JP6411675B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2015/063636 WO2016202387A1 (fr) 2015-06-17 2015-06-17 Procédé de mesure de taux de dépôt et système de contrôle de taux de dépôt

Publications (2)

Publication Number Publication Date
JP2018519415A JP2018519415A (ja) 2018-07-19
JP6411675B2 true JP6411675B2 (ja) 2018-10-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017557378A Expired - Fee Related JP6411675B2 (ja) 2015-06-17 2015-06-17 堆積速度を測定するための方法及び堆積速度制御システム

Country Status (5)

Country Link
JP (1) JP6411675B2 (fr)
KR (2) KR20180112123A (fr)
CN (1) CN107709604A (fr)
TW (1) TWI612167B (fr)
WO (1) WO2016202387A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112912533B (zh) * 2018-11-28 2023-10-24 应用材料公司 用于沉积蒸发的材料的沉积源、沉积装置及其方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793193B2 (ja) * 1990-05-30 1995-10-09 シャープ株式会社 薄膜ｅｌ素子の製造方法
JPH11222670A (ja) * 1998-02-06 1999-08-17 Ulvac Corp 膜厚モニター及びこれを用いた成膜装置
US6558735B2 (en) * 2001-04-20 2003-05-06 Eastman Kodak Company Reusable mass-sensor in manufacture of organic light-emitting devices
DE10134013A1 (de) * 2001-07-12 2003-01-30 Siemens Ag Überwachung eines Messsignals, insbesondere in der Automatisierungstechnik
JP4706380B2 (ja) * 2005-08-04 2011-06-22 ソニー株式会社 蒸着装置及び蒸着方法
WO2008111398A1 (fr) * 2007-03-06 2008-09-18 Tokyo Electron Limited Appareil pour commander un appareil de dépôt et procédé pour commander un appareil de dépôt
JP2009185344A (ja) * 2008-02-07 2009-08-20 Sony Corp 蒸着方法、蒸着装置、および表示装置の製造方法
US8229691B2 (en) * 2008-06-09 2012-07-24 International Business Machines Corporation Method for using real-time APC information for an enhanced lot sampling engine
EP2261388A1 (fr) * 2009-06-12 2010-12-15 Applied Materials Inc. a Corporation of the State of Delaware Dispositif de surveillance du taux de dépôt, évaporateur, installation de revêtement, procédé pour appliquer de la vapeur sur un substrat et procédé d'exploitation d'un dispositif de surveillance du taux de dépôt
EP2508645B1 (fr) * 2011-04-06 2015-02-25 Applied Materials, Inc. Système d'évaporation avec unité de mesure

Also Published As

Publication number Publication date
KR20180112123A (ko) 2018-10-11
CN107709604A (zh) 2018-02-16
JP2018519415A (ja) 2018-07-19
KR101950959B1 (ko) 2019-02-21
TW201710536A (zh) 2017-03-16
WO2016202387A1 (fr) 2016-12-22
TWI612167B (zh) 2018-01-21
KR20170141230A (ko) 2017-12-22

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