TWI612066B - Block copolymer - Google Patents
Block copolymer Download PDFInfo
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- TWI612066B TWI612066B TW104132192A TW104132192A TWI612066B TW I612066 B TWI612066 B TW I612066B TW 104132192 A TW104132192 A TW 104132192A TW 104132192 A TW104132192 A TW 104132192A TW I612066 B TWI612066 B TW I612066B
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- Prior art keywords
- block copolymer
- structural formula
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- block
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00428—Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
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- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/12—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an ether radical
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- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
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- C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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Abstract
本申請案提出嵌段共聚物和其用途。本申請案之嵌段共聚物展現極佳的自組性質或相分離性質,且可以無限制地被賦予各種所需的功能。 This application proposes block copolymers and their uses. The block copolymer of the present application exhibits excellent self-organizing properties or phase separation properties, and can be endowed with various required functions without limitation.
Description
本發明係關於嵌段共聚物和其用途。 The present invention relates to block copolymers and uses thereof.
嵌段共聚物所具有的分子結構中,各具有不同化學結構的聚合物嵌段藉共價鍵彼此連接。嵌段共聚物可藉相分離形成規則排列的結構,如球、圓柱和層狀結構。因嵌段共聚物的自組現象而形成的結構所具有的區段的尺寸可在寬範圍內調整,且該區段可製成各種形式,這些形式可用於各種下一代的奈米裝置、磁性儲存介質、和圖案(藉蝕刻之類):特定言之,製造高密度磁性記錄介質、奈米線、量子點、金屬點之類。 The block copolymer has a molecular structure in which polymer blocks each having a different chemical structure are connected to each other by a covalent bond. Block copolymers can be phase-separated to form regularly arranged structures such as spheres, cylinders, and layered structures. The size of the segment of the structure formed by the self-assembly phenomenon of the block copolymer can be adjusted within a wide range, and the segment can be made into various forms, which can be used in various next-generation nano devices, magnetic Storage media and patterns (by etching or the like): Specifically, high-density magnetic recording media, nanowires, quantum dots, metal dots, and the like are manufactured.
本申請案提供嵌段共聚物和其用途。 This application provides block copolymers and their uses.
除非特定指明,否則本說明書中的“烷基”是指具1至20個碳原子,1至16個碳原子,1至12個碳原子,1至8個碳原子或1至4個碳原子的烷基。以上烷基可為直鏈型、支鏈型或環型,且其可經一或更多個取代基任意地部分取代。 Unless specifically stated, "alkyl" in this specification means having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms, or 1 to 4 carbon atoms Alkyl. The above alkyl group may be linear, branched, or cyclic, and it may be optionally partially substituted with one or more substituents.
除非特定指明,否則本說明書中的“烷氧基”是指具1至20個碳原子,1至16個碳原子,1至12個碳原子,1至8個碳原子或1至4個碳原子的烷氧基。以上烷氧基可為直鏈型、支鏈型或環型,且其可經一或更多個取代基任意地部分取代。 Unless specifically stated, "alkoxy" in this specification means having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms, or 1 to 4 carbon atoms. Atomic alkoxy. The above alkoxy group may be a linear type, a branched type, or a cyclic type, and it may be optionally partially substituted with one or more substituents.
除非特定指明,否則本說明書中的“烯基”或“炔基”是指具2至20個碳原子,2至16個碳原子,2至12個碳原子,2至8個碳原子或2至4個碳原子的烯基或炔基。以上烯基或炔基可為直鏈型、支鏈型或環型,且其可經一或更多個取代基任意地部分取代。 Unless specified otherwise, "alkenyl" or "alkynyl" in this specification means having 2 to 20 carbon atoms, 2 to 16 carbon atoms, 2 to 12 carbon atoms, 2 to 8 carbon atoms, or 2 Alkenyl or alkynyl to 4 carbon atoms. The above alkenyl or alkynyl may be linear, branched or cyclic, and it may be optionally partially substituted with one or more substituents.
除非特定指明,否則本說明書中的“伸烷基”是指具1至20個碳原子,1至16個碳原子,1至12個碳原子,1至8個碳原子或1至4個碳原子的伸烷基。以上伸烷基可為直鏈型、支鏈型或環型,且其可經一或更多個取代基任意地部分取代。 Unless specifically stated, "alkylene" in this specification means having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms, or 1 to 4 carbon atoms. Atomic alkylene. The above alkylene may be linear, branched, or cyclic, and it may be optionally partially substituted with one or more substituents.
除非特定指明,否則本說明書中的“伸烯基”或“伸炔基”是指具2至20個碳原子,2至16個碳原子,2至12個碳原子,2至8個碳原子或2至4個碳原子的伸烯基或伸炔基。以上伸烯基或伸炔基可為直鏈型、支鏈型 或環型,且其可經一或更多個取代基任意地部分取代。 Unless specified otherwise, "alkenyl" or "alkynyl" in this specification means having 2 to 20 carbon atoms, 2 to 16 carbon atoms, 2 to 12 carbon atoms, and 2 to 8 carbon atoms. Or an alkenyl or alkynyl group of 2 to 4 carbon atoms. The above alkenyl or alkynyl can be linear or branched Or cyclic, and it may be optionally partially substituted with one or more substituents.
除非特定指明,否則本說明書中的“芳基”或“伸芳基”是指單羥基或二羥基部分,其係衍生自具有苯環結構的化合物或者二或更多個苯環彼此連接(藉共享一或兩個碳原子或藉任何鏈接物)的結構之化合物或衍生自以上化合物的衍生物。除非特定指明,否則以上芳基或伸芳基是指具有,例如,6至30個碳原子,6至25個碳原子,6至21個碳原子,6至18個碳原子,或6至13個碳原子的芳基或伸芳基。 Unless specified otherwise, "aryl" or "arylene" in this specification refers to a monohydroxy or dihydroxy moiety derived from a compound having a benzene ring structure or two or more benzene rings are connected to each other (by Compounds that share the structure of one or two carbon atoms or borrow any link) or derivatives derived from the above compounds. Unless specified otherwise, the above aryl or arylene refers to having, for example, 6 to 30 carbon atoms, 6 to 25 carbon atoms, 6 to 21 carbon atoms, 6 to 18 carbon atoms, or 6 to 13 Aryl or arylene of carbon atoms.
本申請案中,“芳族結構”是指以上芳基或伸芳基。 In the present application, "aromatic structure" refers to the above aryl or arylene.
本說明書中,除非特定指明,否則“脂環狀環結構”是指,芳環結構以外的環型烴原子結構。除非特定指明,否則以上脂環狀環結構是指具有,例如,3至30個碳原子,3至25個碳原子,3至21個碳原子,3至18個碳原子,或3至13個碳原子的脂環狀環結構。 In this specification, unless specified otherwise, "alicyclic structure" means a cyclic hydrocarbon atom structure other than an aromatic ring structure. Unless specified otherwise, the above alicyclic structure means having, for example, 3 to 30 carbon atoms, 3 to 25 carbon atoms, 3 to 21 carbon atoms, 3 to 18 carbon atoms, or 3 to 13 carbon atoms. Carbon atom alicyclic ring structure.
本申請案中,“單鍵”是指特別的原子不存在於對應區域中之情況。例如,B代表A-B-C所示結構中的單鍵時,可視為沒有特別的原子存在於標記為B的區域,造成介於A和C之間直接連接而形成A-C所示結構。 In the present application, "single bond" refers to a case where a particular atom does not exist in the corresponding region. For example, when B represents a single bond in the structure shown by A-B-C, it can be considered that no special atom exists in the region labeled B, resulting in a direct connection between A and C to form the structure shown in A-C.
本申請案中,可任意取代烷基、烯基、炔基、伸烷基、伸烯基、伸炔基、烷氧基、芳基、伸芳基、鏈、芳族結構之類的一或更多個部分的取代基的例子可包括,但不限於,羥基、鹵原子、羧基、環氧丙基、丙烯醯 基、甲基丙烯醯基、丙烯醯氧基、甲基丙烯醯氧基、巰基、烷基、烯基、炔基、伸烷基、伸烯基、伸炔基、烷氧基、和芳基等。 In this application, alkyl, alkenyl, alkynyl, alkenyl, alkenyl, alkenyl, alkoxy, aryl, arylene, chain, aromatic structure or the like can be arbitrarily substituted Examples of the substituents of more parts may include, but are not limited to, a hydroxyl group, a halogen atom, a carboxyl group, an epoxy group, and acrylidine Methacryl, methacryl, methacryl, methacryl, thiol, alkyl, alkenyl, alkynyl, alkylene, alkenyl, alkenyl, alkoxy, and aryl Wait.
本申請案之嵌段共聚物可含有含以下結構式1所示結構單元之嵌段(下文中稱為嵌段1)。該嵌段1可以僅由以下結構式1所示結構單元所組成或除了以上結構式1所示結構單元以外亦含有另一結構單元。 The block copolymer of the present application may contain a block containing a structural unit represented by the following structural formula 1 (hereinafter referred to as block 1). The block 1 may be composed of only the structural unit represented by the following structural formula 1 or may contain another structural unit in addition to the structural unit represented by the above structural formula 1.
結構式1中,R代表氫原子或烷基;X代表單鍵、氧原子、硫原子、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1代表氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基;Y代表單羥基取代基,其包括含括8或更多個成鏈原子的直鏈連接至彼的環結構。 In Structural Formula 1, R represents a hydrogen atom or an alkyl group; X represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , a carbonyl group, an alkylene group, an alkenyl group, an alkynyl group, -C ( = O) -X 1 -or -X 1 -C (= O)-, wherein X 1 represents an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, or an alkynyl group; Y represents a monohydroxy substituent, which includes a ring structure containing 8 or more chain-forming atoms connected directly to each other.
另一例子中,結構式1的X代表單鍵、氧原子、羰基、-C(=O)-O-、-O-C(=O)-、或-C(=O)-O-,雖未限於此。 In another example, X of Structural Formula 1 represents a single bond, an oxygen atom, a carbonyl group, -C (= O) -O-, -OC (= O)-, or -C (= O) -O-, although Limited to this.
結構式1的Y所示單羥基取代基包括藉至少8個成鏈原子所構成的鏈結構。 The monohydroxy substituent represented by Y in Structural Formula 1 includes a chain structure composed of at least 8 chain-forming atoms.
本申請書中,“成鏈原子”是指形成預定鏈之 直鏈結構的原子。此鏈可為直鏈型或支鏈型,但成鏈原子數僅以形成最長直鏈的原子數計,且鍵結至以上成鏈原子的其他原子(如,當成鏈原子係碳原子時,鍵結至碳原子的氫原子之類)不列入計算。在支鏈型鏈的情況中,成鏈原子數為形成最長鏈之成鏈原子數。例如,鏈是正戊基時,所有的成鏈原子是碳且成鏈原子數是5,而當鏈是2-甲基戊基時,所有的成鏈原子是碳且成鏈原子數是5。成鏈原子的例子可包括碳、氧、硫、和氮;適當的成鏈原子可為碳、氧和氮中之任一者,或碳和氧中之任一者。在鏈中的成鏈原子數可為8或更多,9或更多,10或更多,11或更多,或12或更多。鏈中的成鏈原子數亦可為30或更少,25或更少,20或更少,或16或更少。 In this application, "chain-forming atoms" refer to those that form a predetermined chain Atoms in linear structure. This chain can be straight or branched, but the number of chained atoms is only based on the number of atoms forming the longest straight chain, and is bonded to other atoms of the above chained atoms (for example, when the chained atom is a carbon atom, (Such as hydrogen atoms bonded to carbon atoms) are not included in the calculation. In the case of a branched chain, the number of chain forming atoms is the number of chain forming atoms forming the longest chain. For example, when the chain is n-pentyl, all chain-forming atoms are carbon and the number of chain-forming atoms is 5, and when the chain is 2-methylpentyl, all chain-forming atoms are carbon and the number of chain-forming atoms is 5. Examples of chain-forming atoms may include carbon, oxygen, sulfur, and nitrogen; suitable chain-forming atoms may be any of carbon, oxygen, and nitrogen, or any of carbon and oxygen. The number of chain-forming atoms in the chain may be 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more. The number of chain-forming atoms in the chain may also be 30 or less, 25 or less, 20 or less, or 16 or less.
結構式1所示結構單元可提供所屬的以上嵌段共聚物極佳的自組性質。 The structural unit shown in Structural Formula 1 can provide excellent self-assembly properties of the above block copolymers.
一個例子中,上述鏈可為直鏈烴鏈,如直鏈烷基。此處,該烷基可為具8或更多個碳原子,8至30個碳原子,8至25個碳原子,8至20個碳原子,或8至16個碳原子的烷基。以上烷基中的一或更多個碳原子各者可被氧原子任意地取代,且烷基中的至少一個氫原子可被另一取代基任意地取代。 In one example, the above-mentioned chain may be a linear hydrocarbon chain, such as a linear alkyl group. Here, the alkyl group may be an alkyl group having 8 or more carbon atoms, 8 to 30 carbon atoms, 8 to 25 carbon atoms, 8 to 20 carbon atoms, or 8 to 16 carbon atoms. Each of the one or more carbon atoms in the above alkyl group may be optionally substituted with an oxygen atom, and at least one hydrogen atom in the alkyl group may be optionally substituted with another substituent.
結構式1中,Y可包括環結構,且以上鏈可連接至環結構。此環結構可用以進一步改良該單體所屬嵌段共聚物的自組性質等。該環結構可為芳族結構或脂環狀結構。 In Structural Formula 1, Y may include a ring structure, and the above chain may be connected to the ring structure. This ring structure can be used to further improve the self-organizing properties of the block copolymer to which the monomer belongs. The ring structure may be an aromatic structure or an alicyclic structure.
以上鏈可直接或藉連接物連接至以上環結構。連接物的例子可包括氧原子、硫原子、-NR1-、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-和-X1-C(=O)-,其中R1代表氫原子、烷基、烯基、炔基、烷氧基或芳基,且X1代表單鍵、氧原子、硫原子、-NR2-、-S(=O)2-、伸烷基、伸烯基或伸炔基,其中R2代表氫原子、烷基、烯基、炔基、烷氧基、或芳基。適當連接物的例子包括氧原子和氮原子。以上鏈可連接至芳族結構,例如,藉氧原子或氮原子。此處,以上連接物可為氧原子或-NR1-(其中R1代表氫原子、烷基、烯基、炔基、烷氧基、或芳基)。 The upper chain can be connected to the upper ring structure directly or through a linker. Examples of the linker may include an oxygen atom, a sulfur atom, -NR 1- , -S (= O) 2- , a carbonyl group, an alkylene group, an alkenyl group, an alkenyl group, -C (= O) -X 1- And -X 1 -C (= O)-, wherein R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, or an aryl group, and X 1 represents a single bond, an oxygen atom, a sulfur atom, -NR 2- , -S (= O) 2- , alkylene, alkenyl or alkynyl, wherein R 2 represents a hydrogen atom, alkyl, alkenyl, alkynyl, alkoxy, or aryl. Examples of suitable linkers include oxygen and nitrogen atoms. The above chain may be attached to an aromatic structure, for example, an oxygen atom or a nitrogen atom. Here, the above linker may be an oxygen atom or -NR 1- (where R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, or an aryl group).
一個例子中,結構式1的Y可為以下結構式2所示者。 In one example, Y in Structural Formula 1 may be one shown in Structural Formula 2 below.
[結構式2]-P-Q-Z[Structure formula 2] -P-Q-Z
結構式2中,P代表伸芳基;Q代表單鍵、氧原子或-NR3-,其中R3代表氫原子、烷基、烯基、炔基、烷氧基或芳基;且Z代表具8或更多個成鏈原子的前述鏈。當結構式1的Y是結構式2所示取代基時,結構式2的P可直接連接至結構式1的X。 In Structural Formula 2, P represents an arylene group; Q represents a single bond, an oxygen atom, or -NR 3- , wherein R 3 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, or an aryl group; and Z represents The aforementioned chain having 8 or more chain-forming atoms. When Y of Structural Formula 1 is a substituent represented by Structural Formula 2, P of Structural Formula 2 may be directly connected to X of Structural Formula 1.
結構式2的P的適當例子包括,但不限於,具6至12個碳原子的伸芳基,例如,伸苯基。 Suitable examples of P of Structural Formula 2 include, but are not limited to, arylene having 6 to 12 carbon atoms, for example, phenylene.
結構式2的Q的適當例子包括氧原子和-NR1-(其中R1代表氫原子、烷基、烯基、炔基、烷氧基、或 芳基)。 Suitable examples of Q of Structural Formula 2 include an oxygen atom and -NR 1- (wherein R 1 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, or an aryl group).
結構式1之結構單元的適當例子可包括結構式1的結構單元,其中R代表氫原子或烷基(如,具1至4個碳原子的烷基),X代表-C(=O)-O-,且Y為結構式2所示者,其中P代表伸苯基或具6至12個碳原子的伸芳基,Q代表氧原子,且Z代表含8或更多個成鏈原子的前述鏈。 Suitable examples of the structural unit of Structural Formula 1 may include the structural unit of Structural Formula 1, wherein R represents a hydrogen atom or an alkyl group (for example, an alkyl group having 1 to 4 carbon atoms), and X represents -C (= O)- O-, and Y is represented by Structural Formula 2, wherein P represents phenylene or aryl having 6 to 12 carbon atoms, Q represents an oxygen atom, and Z represents a group containing 8 or more chain-forming atoms The aforementioned chain.
因此,結構式1之適當的例示結構單元可包括以下結構式3所示結構單元。 Therefore, a suitable exemplary structural unit of Structural Formula 1 may include a structural unit shown in Structural Formula 3 below.
結構式3中,R代表氫原子或具1至4個碳原子的烷基,X代表-C(=O)-O-,P代表具6至12個碳原子的伸芳基,Q代表氧原子,且Z代表含8或更多個成鏈原子的前述鏈。 In Structural Formula 3, R represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, X represents -C (= O) -O-, P represents an arylene group having 6 to 12 carbon atoms, and Q represents oxygen Atom, and Z represents the aforementioned chain containing 8 or more chain-forming atoms.
另一例子中,嵌段1的結構單元(結構式1所示者)亦可為以下結構式4所示者。 In another example, the structural unit (shown in Structural Formula 1) of block 1 may be shown in Structural Formula 4 below.
結構式4中,R1和R2各者獨立地代表氫原子或具1至4個碳原子的烷基;X代表單鍵、氧原子、硫原子、-S(=O)2-、羰基、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基;T代表單鍵或伸芳基;Q代表單鍵或羰基;且Y代表含有8或更多個成鏈原子的鏈。 In Structural Formula 4, R 1 and R 2 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; X represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , a carbonyl group , Alkylene, alkenyl, alkynyl, -C (= O) -X 1 -or -X 1 -C (= O)-, where X 1 represents a single bond, oxygen atom, sulfur atom, -S (= O) 2- , alkylene, alkenyl or alkynyl; T represents a single bond or an arylene; Q represents a single bond or a carbonyl group; and Y represents a chain containing 8 or more chain-forming atoms.
結構式4中,X代表單鍵、氧原子、羰基、-C(=O)-O-、或-O-C(=O)-。 In Structural Formula 4, X represents a single bond, an oxygen atom, a carbonyl group, -C (= O) -O-, or -O-C (= O)-.
結構式4的Y的鏈的特定例子可類似於關於結構式1所述者。 A specific example of the chain of Y of Structural Formula 4 may be similar to that described with respect to Structural Formula 1.
另一例子中,嵌段1的任一結構單元(結構式1、3和4所示者)中所含的鏈(具8或更多個成鏈原子)的至少一個成鏈原子之陰電性為3或更高。另一例子中,以上原子的陰電性可為3.7或更低。陰電性為3或更高之以上原子的例子可包括,但不限於,氮原子和氧原子。 In another example, the negative charge of at least one chain-forming atom of a chain (having 8 or more chain-forming atoms) contained in any structural unit of block 1 (shown by structural formulae 1, 3, and 4) Sex is 3 or higher. In another example, the anionic property of the above atom may be 3.7 or less. Examples of the atom having an anionic property of 3 or more may include, but are not limited to, a nitrogen atom and an oxygen atom.
與嵌段1一起含於嵌段共聚物中的嵌段2,其含有上述結構單元,可至少含有以下結構式5所示的結構單元。 The block 2 contained in the block copolymer together with the block 1 may contain the above-mentioned structural unit, and may contain at least the structural unit represented by the following structural formula 5.
結構式5中,X2代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基;R1至R5各者獨立地代表氫原子、烷基、鹵烷基、鹵原子或以下結構式6所示取代基,其中標記為R1至R5的位置中所含之結構式6所示取代基的數目為1或更多。 In Structural Formula 5, X 2 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, an alkynyl group, -C (= O) -X 1 -or- X 1 -C (= O)-, where X 1 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, or an alkynyl group; each of R 1 to R 5 Each independently represents a hydrogen atom, an alkyl group, a haloalkyl group, a halogen atom or a substituent represented by the following structural formula 6, wherein the number of the substituent represented by the structural formula 6 contained in the positions labeled R 1 to R 5 is 1 or more.
結構式6中,Y代表烷基,且X3代表氧原子、羰基、-C(=O)-O-、或-O-C(=O)-。 In Structural Formula 6, Y represents an alkyl group, and X 3 represents an oxygen atom, a carbonyl group, -C (= O) -O-, or -OC (= O)-.
嵌段2可以僅由結構式5所示結構單元所構成或含有一或更多個將述於本說明書下文中的額外結構單 元。嵌段2除了結構式5所示結構單元以外,含有一或更多個額外的結構單元時,各結構單元可在嵌段2中形成獨立的次嵌段,或可不規則地位於嵌段2中。 Block 2 may be composed of only the structural unit shown in Structural Formula 5 or contain one or more additional structural units to be described later in this specification. yuan. When Block 2 contains one or more additional structural units in addition to the structural unit shown in Formula 5, each structural unit may form an independent subblock in Block 2 or may be irregularly located in Block 2 .
如前述者,結構式5所示結構單元含有至少一個結構式6所示的前述取代基。藉由含有此取代基,嵌段共聚物可以更有效地形成自組結構並實現較細的相分離結構,因此,在形成圖案的期間內,形成微圖案的效率獲顯著改良。 As described above, the structural unit represented by Structural Formula 5 contains at least one of the aforementioned substituents represented by Structural Formula 6. By containing this substituent, the block copolymer can more effectively form a self-organizing structure and achieve a finer phase separation structure. Therefore, the efficiency of forming a micropattern is significantly improved during the pattern formation period.
對於可含於結構式5所示結構單元中之取代基(結構式6所示者)的類型沒有特別的限制,只要滿足以上結構式即可。以上取代基的例子可為結構式6所示結構單元,其中X3代表氧原子、羰基、-C(=O)-O-、或-O-C(=O)-。 There is no particular limitation on the type of the substituent (the one shown in Structural Formula 6) that can be contained in the structural unit shown in Structural Formula 5, as long as the above structural formula is satisfied. Examples of the above substituent may be a structural unit shown in Structural Formula 6, wherein X 3 represents an oxygen atom, a carbonyl group, -C (= O) -O-, or -OC (= O)-.
此外,代表以上取代基之結構式6的Y可為具1至20個碳原子,1至16個碳原子,1至12個碳原子,或1至8個碳原子的支鏈型烷基。 In addition, Y of Structural Formula 6 representing the above substituents may be a branched alkyl group having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, or 1 to 8 carbon atoms.
結構式5所示結構單元可含有1或更多個結構式6所示取代基;例如,至少R3代表結構式6所示的以上取代基。 The structural unit represented by Structural Formula 5 may contain one or more substituents represented by Structural Formula 6; for example, at least R 3 represents the above substituent represented by Structural Formula 6.
除了結構式6所示的以上取代基之外,結構式5所示結構單元可含有1或更多,2或更多,3或更多,4或更多,或5或更多個鹵原子(如,氟原子)。結構單元所含鹵原子(如氟原子)的數目亦可為10或更少,9或更少,8或更少,7或更少,或6或更少。 In addition to the above substituents represented by Structural Formula 6, the structural unit represented by Structural Formula 5 may contain 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more halogen atoms. (E.g., fluorine atom). The number of halogen atoms (such as fluorine atoms) contained in the structural unit may also be 10 or less, 9 or less, 8 or less, 7 or less, or 6 or less.
結構式5所示結構單元中,R1至R5中之至少一,1至3或1至2者可代表結構式6所示的以上取代基。 In the structural unit represented by Structural Formula 5 , at least one of R 1 to R 5 , and 1 to 3 or 1 to 2 may represent the above substituents represented by Structural Formula 6.
結構式5所示結構單元中,1或更多,2或更多,3或更多,4或更多,或5或更多個鹵原子含於標記為R1至R5的位置。含於標記為R1至R5的位置處之鹵原子的數目亦可為10或更少,9或更少,8或更少,7或更少,或6或更少。 In the structural unit shown in Structural Formula 5, 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more halogen atoms are contained at positions labeled R 1 to R 5 . The number of halogen atoms contained at the positions labeled R 1 to R 5 may also be 10 or less, 9 or less, 8 or less, 7 or less, or 6 or less.
嵌段2除了結構式5所示結構單元以外,含有額外結構單元時,結構式5所示結構單元的比例可調整至可維持或改良嵌段共聚物之自組性質的範圍內。例如,以上結構單元(結構式5所示者)在嵌段2中的比例可為約0.1mol%至5mol%,0.5mol%至5mol%,1mol%至5mol%,1.5mol%至5mol%,1.5mol%至4mol%,或1.5mol%至3mol%,此以嵌段2中之結構單元的總莫耳數計。可取決於嵌段共聚物中所含結構單元或嵌段的類型而調整此比例。 When the block 2 contains an additional structural unit in addition to the structural unit shown in Structural Formula 5, the proportion of the structural unit shown in Structural Formula 5 can be adjusted within a range that can maintain or improve the self-organizing properties of the block copolymer. For example, the proportion of the above structural unit (shown in Structural Formula 5) in the block 2 may be about 0.1 mol% to 5 mol%, 0.5 mol% to 5 mol%, 1 mol% to 5 mol%, 1.5 mol% to 5 mol%, 1.5 mol% to 4 mol%, or 1.5 mol% to 3 mol%, which is based on the total moles of the structural units in block 2. This ratio can be adjusted depending on the type of structural unit or block contained in the block copolymer.
嵌段共聚物的嵌段2除了結構式5所示結構單元以外,可含有另一結構單元。此處,未特別限制額外含有之結構單元的類型。 The block 2 of the block copolymer may contain another structural unit in addition to the structural unit represented by Structural Formula 5. Here, the type of the structural unit additionally contained is not particularly limited.
例如,嵌段2可額外含有聚乙烯基吡咯啶酮結構單元、聚乳酸結構單元、聚(乙烯基吡啶)結構單元、聚苯乙烯結構單元(如聚苯乙烯和聚(三甲基矽基苯乙烯))、聚伸烷化氧結構單元(如聚伸乙化氧)、聚丁 二烯結構單元、聚異戊烯結構單元、或聚烯烴結構單元(如聚乙烯)。 For example, block 2 may additionally contain a polyvinylpyrrolidone structural unit, a polylactic acid structural unit, a poly (vinylpyridine) structural unit, a polystyrene structural unit (such as polystyrene and poly (trimethylsilylbenzene) Ethylene)), polyalkylene oxide structural units (e.g. poly (ethylene oxide)), polybutylene Diene structural unit, polyisoprene structural unit, or polyolefin structural unit (such as polyethylene).
一個例子中,嵌段2除了結構式5所示結構單元以外,可含有具一或更多個鹵原子之芳族結構的結構單元。 In one example, the block 2 may include a structural unit having an aromatic structure having one or more halogen atoms in addition to the structural unit shown in Structural Formula 5.
嵌段2的此第二結構單元可為,例如,以下結構式7所示結構單元。 This second structural unit of the block 2 may be, for example, a structural unit represented by the following structural formula 7.
結構式7中,B代表具有具一或更多個鹵原子的芳族結構之單羥基取代基。 In Structural Formula 7, B represents a monohydroxy substituent having an aromatic structure having one or more halogen atoms.
藉由與其他嵌段(如嵌段1)具有極佳的交互作用,含有以上結構單元的嵌段可賦予所屬嵌段共聚物極佳的自組性質。 By having excellent interaction with other blocks (such as block 1), the blocks containing the above structural units can impart excellent self-organizing properties to the block copolymers to which they belong.
結構式7中,芳族結構可為,例如,具6至18個碳原子或6至12個碳原子的芳族結構。 In Structural Formula 7, the aromatic structure may be, for example, an aromatic structure having 6 to 18 carbon atoms or 6 to 12 carbon atoms.
結構式7的鹵原子的例子可為氟原子或氯原子,且較佳地選擇氟原子,雖未限於此。 Examples of the halogen atom of Structural Formula 7 may be a fluorine atom or a chlorine atom, and a fluorine atom is preferably selected, although not limited thereto.
一個例子中,結構式7的B可為具有含有6至12個碳原子且經1或更多,2或更多,3或更多,4或更多,或5或更多個鹵原子部分取代的芳族結構之單羥基取代基。以上描述中,對於鹵原子數沒有特別的限制,且 可以有,例如,10或更少,9或更少,8或更少,7或更少,或6或更少個鹵原子存在。 In one example, B of Structural Formula 7 may have a moiety containing 6 to 12 carbon atoms and having 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more halogen atoms. A monohydroxy substituent of a substituted aromatic structure. In the above description, there is no particular limitation on the number of halogen atoms, and There may be, for example, 10 or less, 9 or less, 8 or less, 7 or less, or 6 or less halogen atoms present.
此處,以上結構單元(結構式7所示者)亦可為以下結構式8所示者。 Here, the above structural unit (the one shown in Structural Formula 7) may be the one shown in the following Structural Formula 8.
結構式8中,X2代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基;且W代表包括至少一個鹵原子的芳基。W可為經至少一個鹵原子部分取代的芳基;例如,其可為具6至12個碳原子且經2或更多,3或更多,4或更多,或5或更多個鹵原子部分取代的芳基。 In Structural Formula 8, X 2 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, an alkynyl group, -C (= O) -X 1 -or- X 1 -C (= O)-, wherein X 1 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, or an alkynyl group; and W stands for including at least one An aryl group of a halogen atom. W may be an aryl group partially substituted with at least one halogen atom; for example, it may be 6 to 12 carbon atoms and be substituted with 2 or more, 3 or more, 4 or more, or 5 or more halogens Atom partially substituted aryl.
另一例子中,以上結構單元(結構式7所示者)亦可為以下結構式9所示者。 In another example, the above structural unit (the one shown in Structural Formula 7) may be the one shown in the following Structural Formula 9.
結構式9中,X2代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基、伸炔基、-C(=O)-X1-或-X1-C(=O)-,其中X1代表單鍵、氧原子、硫原子、-S(=O)2-、伸烷基、伸烯基或伸炔基;且R1至R5各者獨立地代表氫原子、烷基、鹵烷基或鹵原子,其中標示為R1至R5的位置所含的鹵原子數為1或更多。 In Structural Formula 9, X 2 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, an alkynyl group, -C (= O) -X 1 -or- X 1 -C (= O)-, wherein X 1 represents a single bond, an oxygen atom, a sulfur atom, -S (= O) 2- , an alkylene group, an alkenyl group, or an alkynyl group; and R 1 to R 5 Each independently represents a hydrogen atom, an alkyl group, a haloalkyl group, or a halogen atom, and the number of halogen atoms contained in the positions designated as R 1 to R 5 is 1 or more.
另一例子中,結構式9的X2可代表單鍵、氧原子、伸烷基、-C(=O)-O-、或-O-C(=O)-。 In another example, X 2 of Structural Formula 9 may represent a single bond, an oxygen atom, an alkylene group, -C (= O) -O-, or -OC (= O)-.
結構式9中,R1至R5各者獨立地代表氫原子、烷基、鹵烷基或鹵原子,且有1或更多,2或更多,3或更多,4或更多,或5或更多個鹵原子(如,氟原子)含於標記為R1至R5的位置。標記為R1至R2的位置所含的鹵原子(如,氟原子)數亦可為10或更少,9或更少,8或更少,7或更少,或6或更少。 In Structural Formula 9, each of R 1 to R 5 independently represents a hydrogen atom, an alkyl group, a haloalkyl group, or a halogen atom, and has 1 or more, 2 or more, 3 or more, 4 or more, or 5 or more halogen atoms (e.g., fluorine atom) contained in the marker for the location of the R 1 to R 5. The number of halogen atoms (eg, fluorine atoms) contained in the positions labeled R 1 to R 2 may also be 10 or less, 9 or less, 8 or less, 7 or less, or 6 or less.
嵌段2除了結構式5所示結構單元以外,含有以上具有一或更多個鹵原子的芳族結構之結構單元 (如,結構式7至9之任一者所示結構單元)時,以上具有一或更多個鹵原子的芳族結構之結構單元的莫耳數(DH)對結構式5所示結構單元的莫耳數(D5)之比(DH/D5)可為約35至65,約40至60,或約40至50。 In addition to the structural unit shown in Structural Formula 5, the block 2 contains a structural unit having an aromatic structure having one or more halogen atoms as described above. (E.g., the structural unit shown in any one of structural formulae 7 to 9), the Mohr number (DH) of the structural unit of the above aromatic structure having one or more halogen atoms to the structural unit shown in structural formula 5 The molar number (D5) ratio (DH / D5) may be about 35 to 65, about 40 to 60, or about 40 to 50.
本申請案之嵌段共聚物係由前述嵌段1和嵌段2各者中之一或更多者所構成的嵌段共聚物。其可為僅由兩種類型的嵌段所構成的二嵌段共聚物,或其可為三嵌段或多嵌段(具有超過三種類型的嵌段)共聚物,其含有嵌段1和嵌段2之一或二者中之二或更多者或除了嵌段1和嵌段2以外另含有其他類型的嵌段。 The block copolymer of the present application is a block copolymer composed of one or more of each of the aforementioned block 1 and block 2. It may be a diblock copolymer composed of only two types of blocks, or it may be a triblock or multiblock (with more than three types of blocks) copolymer, which contains blocks 1 and One or two or more of block 2 or other types of blocks in addition to block 1 and block 2.
以上嵌段共聚物可固有地展現極佳的相分離或極佳的自組性質。藉由適當地選擇和合併嵌段及滿足本發明書中將於以下描述的一或更多個參數,可進一步改良此相分離或自組性質。 The above block copolymers can inherently exhibit excellent phase separation or excellent self-organizing properties. This phase separation or self-organizing property can be further improved by appropriately selecting and merging the blocks and satisfying one or more parameters to be described later in the present specification.
嵌段共聚物含有2或更多個藉共價鍵彼此連接的聚合物鏈,並因此發生相分離。本申請案之嵌段共聚物展現相分離性質且,必要時,經由微相分離,可形成奈米尺寸結構。此奈米結構的形式和尺寸可由嵌段共聚物的尺寸(分子量之類)或嵌段間的相對比控制。可經由相分離而形成之結構的例子可包括球、圓柱、螺旋二十四面體(gyroid)、層狀物和反轉結構,且可將該嵌段共聚物形成此結構的能力稱為“自組(self-assembling)”。本發明者識別出,在本說明書之前述各種嵌段共聚物中,嵌段共聚物滿足本說明書中以下將描述的各種參數中之至少一者 時,此嵌段共聚物固有地展現顯著改良的自組性質。本申請案之嵌段共聚物滿足任一參數,或同時滿足2或更多個參數。特別地,識別出藉由滿足一或更多個適當的參數,嵌段共聚物可展現垂直定向。本申請案中,“垂直定向(vertical orientation)”是指嵌段共聚物定向的方向且是指嵌段共聚物所形成的奈米結構之定向垂直於基板方向。用於控制嵌段共聚物之自組結構水平或垂直於各種基板上的技術大多仰賴嵌段共聚物的實際施用。嵌段共聚物膜中的奈米結構之定向通常由構成嵌段共聚物之嵌段中的嵌段暴於表面或在空氣中決定。通常,基板大多為極性且空氣為非極性;因此,構成嵌段共聚物中之具有較高極性的嵌段潤濕基板,而具有較低極性的嵌段潤濕與空氣之界面。因此,提出數種技巧以有助於嵌段共聚物之各具有不同性質之不同類型的嵌段同時潤濕基板面,最具代表性的是製造中性表面以控制定向。但是,在本申請案的一方面中,適當地控制以下參數時,嵌段聚合物亦垂直定向於未以任何方法(如表面中和化處理,此為此領域中習知者)事先處理過的基板上。本申請案的另一方面中,藉由熱退火,亦可在短時間內在大面積上誘發以上的垂直定向。 Block copolymers contain 2 or more polymer chains connected to each other by covalent bonds, and thus phase separation occurs. The block copolymers of the present application exhibit phase separation properties and, if necessary, can form nano-sized structures via microphase separation. The form and size of this nanostructure can be controlled by the size (such as molecular weight) of the block copolymer or the relative ratio between the blocks. Examples of structures that can be formed by phase separation may include spheres, cylinders, gyroids, layers, and inverted structures, and the ability of the block copolymer to form this structure is called " Self-assembling ". The inventors have identified that among the aforementioned various block copolymers in the present specification, the block copolymer satisfies at least one of various parameters described below in the present specification. This block copolymer inherently exhibits significantly improved self-organizing properties. The block copolymer of the present application satisfies any one parameter, or at the same time satisfies two or more parameters. In particular, it is recognized that by satisfying one or more appropriate parameters, the block copolymer can exhibit vertical orientation. In this application, “vertical orientation” refers to the direction in which the block copolymer is oriented and refers to the orientation of the nanostructure formed by the block copolymer perpendicular to the substrate direction. The techniques used to control the self-organizing structure of block copolymers either horizontally or vertically on various substrates rely mostly on the actual application of the block copolymers. The orientation of the nanostructure in the block copolymer film is usually determined by the blocks in the blocks constituting the block copolymer being exposed to the surface or in the air. Generally, the substrate is mostly polar and the air is non-polar; therefore, the block copolymer with a higher polarity in the block copolymer constitutes a wetting substrate, and the block with a lower polarity wets the interface with air. Therefore, several techniques are proposed to help different types of blocks of block copolymers with different properties simultaneously wet the substrate surface. The most representative is to make a neutral surface to control the orientation. However, in one aspect of the present application, when the following parameters are appropriately controlled, the block polymer is also vertically oriented without being processed in advance by any method (such as surface neutralization treatment, which is known in the art). On the substrate. In another aspect of the present application, the above-mentioned vertical orientation can be induced in a large area in a short time by thermal annealing.
本發明的一方面之嵌段共聚物能夠形成膜,其在低掠角小角度X射線散射(grazing-incidence small-angle X-ray scattering)(GISAXS)期間內,在疏水表面上製造平面內繞射圖。以上嵌段共聚物能夠形成膜,該膜在GISAXS期間內,在疏水表面上製造平面內繞射圖(in- p1ane diffraction pattern)。 The block copolymer of one aspect of the present invention is capable of forming a film that produces an in-plane winding on a hydrophobic surface during a grazing-incidence small-angle X-ray scattering (GISAXS) period Shooting map. The above block copolymers are capable of forming a film, which produces an in-plane diffraction pattern (in- p1ane diffraction pattern).
本申請案中,在GISAXS期間內,製造平面內繞射圖是指在GISAXS分析期間內,在GISAXS繞射圖中,出現垂直於x-分量的峰。此峰因為嵌段共聚物的垂直定向而被察覺。因此,嵌段共聚物製造平面內繞射圖代表垂直定向。另一例子中,在GISAXS繞射圖的x-分量上觀察到的前述峰的數目可為至少2,且當有數個峰存在時,所觀察到的峰的散射向量(q值)具有整數比,各情況中,可進一步改良嵌段共聚物的相分離效率。 In the present application, during the GISAXS period, manufacturing an in-plane diffraction pattern means that during the GISAXS analysis period, a peak perpendicular to the x-component appears in the GISAXS diffraction pattern. This peak was noticed due to the vertical orientation of the block copolymer. Therefore, in-plane diffraction patterns for block copolymer fabrication represent vertical orientation. In another example, the number of the aforementioned peaks observed on the x-component of the GISAXS diffraction pattern may be at least two, and when there are several peaks, the observed scattering vector (q value) of the peaks has an integer ratio In each case, the phase separation efficiency of the block copolymer can be further improved.
本申請案中,“垂直”可以有誤差;例如,此詞彙的定義可包括在±10度,±8度,±6度,±4度,或±2度範圍內的誤差。 In this application, "vertical" may have errors; for example, the definition of this term may include errors in the range of ± 10 degrees, ± 8 degrees, ± 6 degrees, ± 4 degrees, or ± 2 degrees.
能夠形成在親水表面和疏水表面二者上製造平面內繞射圖的膜之嵌段共聚物可在未經任何特別的方法事先處理以誘發垂直定向的各種表面上展現垂直定向。本申請案中,“親水表面”是指對於經純化的水的潤濕角度在5度至20度範圍內的表面。親水表面的例子包括,但不限於,以氧電漿、硫酸或食人魚溶液(piranha solution)進行過表面處理的矽表面。本申請案中,“疏水表面”是指對於經純化的水的潤濕角度在50度至70度範圍內的表面。疏水表面的例子可包括,但不限於,以氧電漿進行過表面處理的聚二甲基矽氮烷(PDMS)表面、以六甲基二矽氮烷(HMDS)進行過表面處理的矽表面,及以氟化氫(HF)進行過表面處理的矽表面。 Block copolymers capable of forming a film that produces an in-plane diffraction pattern on both hydrophilic and hydrophobic surfaces can exhibit vertical orientation on a variety of surfaces that have not been previously processed to induce vertical orientation by any particular method. In the present application, the "hydrophilic surface" refers to a surface having a wetting angle to purified water in a range of 5 to 20 degrees. Examples of hydrophilic surfaces include, but are not limited to, silicon surfaces surface-treated with an oxygen plasma, sulfuric acid, or a piranha solution. In the present application, a "hydrophobic surface" refers to a surface having a wetting angle to purified water in a range of 50 degrees to 70 degrees. Examples of the hydrophobic surface may include, but are not limited to, a polydimethylsilazane (PDMS) surface surface treated with an oxygen plasma, and a silicon surface surface treated with hexamethyldisilazane (HMDS). , And silicon surfaces that have been surface treated with hydrogen fluoride (HF).
除非特定指明,否則可視本申請案中之溫度而改變的性質(如潤濕角度)的數值係於室溫測得。“室溫”是指於其未加熱或冷卻的常態溫度,且可以是指約10℃至30℃,約25℃,或約23℃的溫度。 Unless otherwise specified, values (such as wetting angles) that can be changed depending on the temperature in this application are measured at room temperature. "Room temperature" refers to a normal temperature at which it is not heated or cooled, and may refer to a temperature of about 10 ° C to 30 ° C, about 25 ° C, or about 23 ° C.
形成於親水或疏水表面上且在GISAXS期間內製造平面內繞射圖的膜可為已進行過熱退火處理的膜。用於GISAXS測定的膜可藉由,例如,以上嵌段共聚物以約0.7重量%濃度溶於溶劑(如,氟苯)中而製得的溶液以約25nm厚度和2.25cm2(寬:1.5cm,長:1.5cm)塗覆面積施於親水或疏水表面上及熱退火此塗層而形成。此熱退火可藉例如使得以上的膜維持於約160℃溫度約1小時的方式進行。GISAXS可藉以前述方式製得的膜上的X-射線入射測定,其入射角度在約0.12至0.23度範圍內。膜散射的繞射圖藉本領域習知的測定裝置(如2D mar CCD)得到。使用繞射圖證實平面內繞射圖之存在與否之方法為本領域習知者。 The film formed on the hydrophilic or hydrophobic surface and producing the in-plane diffraction pattern during the GISAXS period may be a film that has been subjected to an overheat annealing treatment. The film used for the GISAXS measurement can be, for example, a solution prepared by dissolving the above block copolymer in a solvent (eg, fluorobenzene) at a concentration of about 0.7% by weight at a thickness of about 25 nm and a thickness of 2.25 cm 2 (width: 1.5 cm, length: 1.5 cm) The coating area is formed on a hydrophilic or hydrophobic surface and the coating is thermally annealed. This thermal annealing can be performed, for example, by maintaining the above film at a temperature of about 160 ° C. for about 1 hour. GISAXS can be measured by X-ray incidence on a film made in the aforementioned manner, and its angle of incidence is in the range of about 0.12 to 0.23 degrees. The diffraction pattern of the film scattering is obtained by a measurement device known in the art (such as a 2D mar CCD). The method of using a diffraction pattern to verify the existence of an in-plane diffraction pattern is known to those skilled in the art.
觀察到在GISAXS期間內具有前述峰之嵌段共聚物展現極佳的自組性質,其亦可取決於目的而經有效地控制。 It was observed that the block copolymer having the aforementioned peaks during the GISAXS period exhibits excellent self-organizing properties, which can also be effectively controlled depending on the purpose.
在X-射線繞射(XRD)分析期間內,本申請案之嵌段共聚物有至少一個峰出現於預定的散射向量q範圍內。 During the X-ray diffraction (XRD) analysis period, at least one peak of the block copolymer of the present application appears in a predetermined scattering vector q range.
例如,在XRD分析期間內,以上嵌段共聚物具有至少一個峰在0.5nm-1至10nm-1的散射向量q範圍 內。另一例子中,出現以上峰的散射向量q可為0.7nm-1或更高,0.9nm-1或更高,1.1nm-1或更高,1.3nm-1或更高,或1.5nm-1或更高。另一例子中,出現以上峰的散射向量q亦可為9nm-1或更低,8nm-1或更低,7nm-1或更低,6nm-1或更低,5nm-1或更低,4nm-1或更低,3.5nm-1或更低,或3nm-1或更低。 For example, during the XRD analysis, the above block copolymer has at least one peak in a range of a scattering vector q ranging from 0.5 nm -1 to 10 nm -1 . In another example, a peak appears above the scattering vector q may 0.7nm -1 or greater, 0.9nm -1 or greater, 1.1nm -1 or greater, 1.5nm 1.3nm -1 or higher, or - 1 or higher. In another example, the scattering vector q where the above peak appears may also be 9 nm -1 or lower, 8 nm -1 or lower, 7 nm -1 or lower, 6 nm -1 or lower, 5 nm -1 or lower, 4nm -1 or lower, 3.5nm -1 or lower, or 3nm -1 or lower.
在以上散射向量q範圍內觀察到的峰的半高寬(FWHM)在0.2至0.9nm-1範圍內。另一例子中,以上FWHM可為0.25nm-1或更高,0.3nm-1或更高,或0.4nm-1或更高。另一例子中,以上FWHM亦可為0.85nm-1或更低,0.8nm-1或更低,或0.75nm-1或更低。 The full width at half maximum (FWHM) of the peak observed in the above scattering vector q range is in the range of 0.2 to 0.9 nm -1 . In another example, the above FWHM may be 0.25 nm -1 or higher, 0.3 nm -1 or higher, or 0.4 nm -1 or higher. In another example, the above may also be 0.85nm -1 FWHM or less, 0.8nm -1 or less, or 0.75 nm -1 or less.
本申請案中,“FWHM”是指最大峰於最大高度一半處的寬度(即,兩個極端散射向量q值之間的差)。 In this application, "FWHM" refers to the width of the maximum peak at half the maximum height (ie, the difference between the two extreme scattering vector q values).
XRD分析中的以上散射向量q和FWHM係將施用最小平方回歸之數值分析法用於XRD分析結果而得到的數值。以上方法中,將對應於XRD繞射圖之最低強度的部分設定為基線且最低強度設定為零,之後對以上XRD圖的峰型進行Gaussian擬合,自擬合結果得到前述散射向量q和FWHM。進行以上的Gaussian擬合時,R-平方值是至少0.9或更高,0.92或更高,0.94或更高,或0.96或更高。自XRD分析得到資訊之方法,如前述者,為本領域習知者;例如,可使用數值分析程式,如Origin。 The above scattering vectors q and FWHM in the XRD analysis are values obtained by applying a numerical analysis method of least squares regression to the results of the XRD analysis. In the above method, the part corresponding to the lowest intensity of the XRD diffraction pattern is set to the baseline and the lowest intensity is set to zero. Then, the peak shape of the above XRD pattern is subjected to Gaussian fitting, and the aforementioned scattering vectors q and FWHM are obtained from the fitting results . When the above Gaussian fitting is performed, the R-squared value is at least 0.9 or higher, 0.92 or higher, 0.94 or higher, or 0.96 or higher. Methods for obtaining information from XRD analysis, such as those mentioned above, are known in the art; for example, numerical analysis programs such as Origin can be used.
在前述散射向量q範圍中製造具有前述 FWHM值的峰之嵌段共聚物具有適用於自組的晶狀區域。已證實在前述散射向量q範圍中之嵌段共聚物能夠展現極佳的自組性質。 Fabricated with the aforementioned in the aforementioned range of scattering vectors q The block copolymer of the peak of the FWHM value has a crystalline region suitable for self-assembly. It has been confirmed that block copolymers in the aforementioned range of scattering vectors q can exhibit excellent self-organizing properties.
XRD分析可藉由使得X-射線穿透嵌段共聚物試樣及之後測定散射強度與散射向量的關係而得。XRD分析可以在此嵌段共聚物上進行,無須任何特別的前處理;例如,可藉由在適當條件下乾燥該嵌段共聚物及之後以X-射線穿透的方式進行。可使用垂直尺寸為0.023mm且水平尺寸為0.3mm的X-射線。經由擷取得自試樣散射的2D繞射圖(其係藉由使用測量裝置(如2D mar CCD)及以前述方法擬合所得的繞射圖之影像形式),可得到散射向量和FWHM。 XRD analysis can be obtained by making X-rays penetrate the block copolymer sample and then measuring the relationship between the scattering intensity and the scattering vector. XRD analysis can be performed on this block copolymer without any special pretreatment; for example, it can be performed by drying the block copolymer under appropriate conditions and then X-ray penetrating. X-rays having a vertical dimension of 0.023 mm and a horizontal dimension of 0.3 mm can be used. The scattering vector and FWHM can be obtained by capturing the 2D diffraction pattern scattered from the sample (by using a measuring device (such as a 2D mar CCD) and the image form of the diffraction pattern fitted by the aforementioned method).
構成嵌段共聚物之嵌段中之至少一者含有本說明書將於以下描述的前述鏈時,該鏈中的成鏈原子數n滿足散射向量q(其自前述XRD分析得到)和以下數學式1二者。 When at least one of the blocks constituting the block copolymer contains the aforementioned chain to be described later in this specification, the number of chain-forming atoms n in the chain satisfies the scattering vector q (which is obtained from the aforementioned XRD analysis) and the following mathematical formula 1 both.
[數學式1]3nm-1至5nm-1=nq/(2×π) [Mathematical formula 1] 3nm -1 to 5nm -1 = nq / (2 × π)
在數學式1中,n代表前述成鏈原子數,而q代表在以上嵌段共聚物進行XRD分析的期間內,可偵測到的峰的最小散射向量或觀察到具有最大峰面積之峰的散射向量。此外,數學式1中,π代表圓周對其直徑的比。 In Formula 1, n represents the aforementioned number of chain-forming atoms, and q represents the minimum scattering vector of a detectable peak or the peak with the largest peak area observed during the XRD analysis of the above block copolymer. Scattering vector. In addition, in Mathematical Formula 1, π represents the ratio of the circumference to its diameter.
代入以上數學式1中的q等係以如前述XRD分析法描述之相同方式得到的數值。 The q and the like substituted into the above formula 1 are numerical values obtained in the same manner as described in the foregoing XRD analysis method.
數學式1的q等可為,例如,在0.5nm-1至10nm-1範圍內的散射向量。另一例子中,數學式1的q可為0.7nm-1或更高,0.9nm-1或更高,1.1nm-1或更高,1.3nm-1或更高,或1.5nm-1或更高。另一例子中,數學式1中的q亦可為9nm-1或更低,8nm-1或更低,7nm-1或更低,6nm-1或更低,5nm-1或更低,4nm-1或更低,3.5nm-1或更低,或3nm-1或更低。 Q and the like of Mathematical Formula 1 may be, for example, a scattering vector in a range of 0.5 nm -1 to 10 nm -1 . In another example, equation q 1 may be 0.7nm -1 or greater, 0.9nm -1 1.5nm -1 or higher, 1.1nm -1 or greater, 1.3nm -1 or higher, or, or higher. In another example, q in Mathematical Formula 1 may also be 9nm -1 or lower, 8nm -1 or lower, 7nm -1 or lower, 6nm -1 or lower, 5nm -1 or lower, 4nm -1 or lower, 3.5 nm -1 or lower, or 3 nm -1 or lower.
數學式1描述當嵌段共聚物自組形成相分離結構時,各含有前述鏈的嵌段之間的距離D和成鏈原子數之間的關係。當含有前述鏈的嵌段共聚物中之成鏈原子數滿足數學式1時,鏈的晶度提高,並藉此可明顯改良相分離或垂直定向性質。另一例子中,數學式1中的nq/(2×π)可為4.5nm-1或更低。以上描述中,藉由使用數學式,D=2×π/q,可計算出含有以上鏈之嵌段中的距離(D,單位:nm),其中D代表嵌段間的上述距離(D,單位:nm),且π和q如數學式1中之定義。 Mathematical Formula 1 describes the relationship between the distance D between the blocks containing the aforementioned chains and the number of chain-forming atoms when the block copolymer self-assembles to form a phase separation structure. When the number of chain-forming atoms in the block copolymer containing the aforementioned chain satisfies Mathematical Formula 1, the crystallinity of the chain is increased, and thereby phase separation or vertical alignment properties can be significantly improved. In another example, nq / (2 × π) in Formula 1 may be 4.5 nm -1 or lower. In the above description, by using the mathematical formula, D = 2 × π / q, the distance (D, unit: nm) in the block containing the above chain can be calculated, where D represents the above-mentioned distance (D, Unit: nm), and π and q are as defined in Formula 1.
本申請案的一個方面,介於嵌段共聚物中之嵌段1的表面能量和嵌段2的表面能量之間的差的絕對值可為10mN/m或更低,9mN/m或更低,8mN/m或更低,7.5mN/m或更低,或7mN/m或更低。且,介於以上表面能量之間的差的絕對值亦可為1.5mN/m,2mN/m,或2.5mN/m或更高。表面能量之間的差的絕對值在以上範圍內之嵌段1和嵌段2彼此藉共價鍵連接的結構能夠誘發相分離,此因不互溶程度足夠之故。以上描述中,嵌段 1可為,例如,含有前述鏈的前述嵌段。 In one aspect of the present application, the absolute value of the difference between the surface energy of block 1 and the surface energy of block 2 in the block copolymer may be 10 mN / m or less, and 9 mN / m or less 8mN / m or less, 7.5mN / m or less, or 7mN / m or less. Also, the absolute value of the difference between the above surface energies may also be 1.5 mN / m, 2 mN / m, or 2.5 mN / m or more. The structure in which the absolute value of the difference between the surface energies is within the above range, and the blocks 1 and 2 are connected to each other by a covalent bond can induce phase separation because the degree of immiscibility is sufficient. In the above description, the block 1 may be, for example, the aforementioned block containing the aforementioned chain.
表面能量可藉由使用Drop Shape Analyzer DSA100(KRUSS GmbH生產)測定。特定言之,在藉由將塗覆液(待測標的試樣(即,嵌段共聚物或均聚物)溶於氟苯中至固體濃度約2重量%而製得)以厚度約50nm且塗覆面積為4cm2(寬:2cm,長:2cm)施用在基板上,於室溫乾燥約1小時,及之後於160℃熱退火約1小時而製得的膜上可測得表面能量。重複5次藉由將本領域已知其表面張力的去離子水滴在以上經熱退火的膜上以測定接觸角度的程序,並將這5個測得的接觸角度值加以平均。類似地,重複5次藉由將本領域已知其表面張力的二碘甲烷滴在以上經熱退火的膜上以測定接觸角度的程序,並將這5個測得的接觸角度值加以平均。然後,使用分別以去離子水和二碘甲烷測得之接觸角度的平均值,將對應於溶劑之表面張力的數值(Strom值)代入根據Owens-Wendt-Rabel-Kaelble方法的數學式中,能夠得到表面能量。藉由將上述方法用於僅由構成以上嵌段之單體所構成的均聚物上,可得到對應於嵌段共聚物的各嵌段之表面能量的數值。 The surface energy can be measured by using a Drop Shape Analyzer DSA100 (manufactured by KRUSS GmbH). In particular, it is prepared by dissolving a coating solution (a target sample to be measured (i.e., a block copolymer or a homopolymer) in fluorobenzene to a solid concentration of about 2% by weight) at a thickness of about 50 nm and The coating area is 4 cm 2 (width: 2 cm, length: 2 cm), and the surface energy can be measured on the film prepared by applying the substrate on, drying at room temperature for about 1 hour, and thermal annealing at 160 ° C. for about 1 hour. The procedure of measuring the contact angle by repeating 5 times of deionized water droplets whose surface tension is known in the art on the above annealed film was repeated five times, and the five measured contact angle values were averaged. Similarly, the procedure of measuring the contact angle by dropping diiodomethane whose surface tension is known in the art on the above thermally annealed film was repeated 5 times, and the 5 measured contact angle values were averaged. Then, using the average value of the contact angles measured with deionized water and diiodomethane, respectively, and substituting the numerical value (Strom value) corresponding to the surface tension of the solvent into the mathematical formula according to the Owens-Wendt-Rabel-Kaelble method, Get the surface energy. By applying the above method to a homopolymer composed of only the monomers constituting the above blocks, a value corresponding to the surface energy of each block of the block copolymer can be obtained.
嵌段共聚物含有前述鏈時,含有該鏈的嵌段所具有的表面能量高於其他嵌段所具有的表面能量。例如,當嵌段共聚物的嵌段1中含有以上鏈時,嵌段1的表面能量高於嵌段2。此處,嵌段1的表面能量可在約20mN/m至40mN/m範圍內。以上嵌段1的表面能量可為 22mN/m或更高,24mN/m或更高,26mN/m或更高,或28mN/m或更高。以上嵌段1的表面能量亦可為38mN/m或更低,36mN/m或更低,34mN/m或更低,或32mN/m或更低。前述之含有嵌段1且嵌段1的表面能量不同於嵌段2之嵌段共聚物可展現極佳的自組性質。 When the block copolymer contains the aforementioned chain, the surface energy of the block containing the chain is higher than that of other blocks. For example, when the above chain is contained in block 1 of the block copolymer, the surface energy of block 1 is higher than that of block 2. Here, the surface energy of the block 1 may be in a range of about 20 mN / m to 40 mN / m. The surface energy of the above block 1 can be 22mN / m or higher, 24mN / m or higher, 26mN / m or higher, or 28mN / m or higher. The surface energy of the above block 1 may also be 38 mN / m or lower, 36 mN / m or lower, 34 mN / m or lower, or 32 mN / m or lower. The aforementioned block copolymer containing block 1 and having a surface energy different from that of block 2 can exhibit excellent self-assembly properties.
嵌段共聚物中,介於嵌段1和嵌段2之間之密度差的絕對值可為0.25g/cm3或更高,0.3g/cm3或更高,0.35g/cm3或更高,0.4g/cm3或更高,或0.45g/cm3或更高。前述密度差的絕對值可為0.9g/cm3或更高,0.8g/cm3或更低,0.7g/cm3或更低,0.65g/cm3或更低,或0.6g/cm3或更低。嵌段1和嵌段2之密度差的絕對值在以上範圍內且彼此藉共價鍵連接之結構因為足夠的不互溶程度造成的相分離而可誘發有效的微相分離。 In block copolymers, the absolute value of the density difference between block 1 and block 2 may be 0.25 g / cm 3 or higher, 0.3 g / cm 3 or higher, 0.35 g / cm 3 or higher High, 0.4 g / cm 3 or higher, or 0.45 g / cm 3 or higher. The absolute value of the foregoing density difference may be 0.9 g / cm 3 or higher, 0.8 g / cm 3 or lower, 0.7 g / cm 3 or lower, 0.65 g / cm 3 or lower, or 0.6 g / cm 3 Or lower. The absolute value of the density difference between the blocks 1 and 2 is within the above range and the structures connected to each other by covalent bonds can induce effective microphase separation due to phase separation caused by a sufficient degree of immiscibility.
以上嵌段共聚物中之各嵌段的密度可藉由使用本領域中習知的浮力法測定;例如,可藉由分析嵌段共聚物在溶劑(如乙醇,已知其於空氣中質量和密度)中的質量而測得密度。 The density of each block in the above block copolymers can be determined by using buoyancy methods known in the art; for example, by analyzing the block copolymer in a solvent such as ethanol, its mass in air and Density).
嵌段共聚物含有前述鏈時,含有此鏈的嵌段所具有的密度低於其他嵌段。例如,嵌段共聚物的嵌段1中含有前述鏈時,嵌段1的密度低於嵌段2。此處,嵌段1的密度可在約0.9g/cm3至1.5g/cm3範圍內。以上嵌段1的密度可為0.95g/cm3或更高。以上嵌段1的密度可為1.4g/cm3或更低,1.3g/cm3或更低,1.2g/cm3或更低,1.1g/cm3或更低,或1.05g/cm3或更低。含有以上嵌段1 (其密度不同於上述嵌段2)之嵌段共聚物可展現極佳的自組性質。上述表面能量和密度可為於室溫測得的數值。 When a block copolymer contains the aforementioned chain, the density of the block containing the chain is lower than that of other blocks. For example, when the above-mentioned chain is contained in block 1 of the block copolymer, the density of block 1 is lower than that of block 2. Here, the density of the block 1 may be in a range of about 0.9 g / cm 3 to 1.5 g / cm 3 . The density of the above block 1 may be 0.95 g / cm 3 or higher. The density of the above block 1 may be 1.4 g / cm 3 or lower, 1.3 g / cm 3 or lower, 1.2 g / cm 3 or lower, 1.1 g / cm 3 or lower, or 1.05 g / cm 3 Or lower. The block copolymer containing the above block 1 (the density is different from the above block 2) can exhibit excellent self-assembly properties. The above surface energy and density may be values measured at room temperature.
嵌段共聚物可含有體積分率在0.4至0.8範圍內的嵌段和體積分率在0.2至0.6範圍內的嵌段。嵌段共聚物含有上述鏈時,含有鏈之嵌段的體積分率可在0.4至0.8範圍內。例如,此鏈含於嵌段1中時,嵌段1的體積分率可在0.4至0.8範圍內,而嵌段2的體積分率可在0.2至0.6範圍內。嵌段1和嵌段2的體積分率的和等於1。含有上述體積分率之各嵌段之嵌段共聚物展現極佳的自組性質。基於嵌段的密度和分子量(其藉凝膠穿透層析法(GPC)測得)得到嵌段共聚物中之各嵌段的體積分率。 The block copolymer may contain blocks having a volume fraction ranging from 0.4 to 0.8 and blocks having a volume fraction ranging from 0.2 to 0.6. When the block copolymer contains the above-mentioned chain, the volume fraction of the chain-containing block may be in the range of 0.4 to 0.8. For example, when this chain is contained in block 1, the volume fraction of block 1 can be in the range of 0.4 to 0.8, and the volume fraction of block 2 can be in the range of 0.2 to 0.6. The sum of the volume fractions of blocks 1 and 2 is equal to 1. The block copolymer containing each of the above-mentioned volume fractions exhibits excellent self-organizing properties. The volume fraction of each block in the block copolymer is obtained based on the density and molecular weight of the blocks, as measured by gel permeation chromatography (GPC).
嵌段共聚物的數量平均分子量(Mn)可為,例如,在3,000至300,000範圍內。本說明書中,“數量平均分子量”是指以GPC測得並基於聚苯乙烯標準品校正的值,且在本說明書中,除非特定指明,否則“分子量”是指數量平均分子量。另一例子中,Mn可為,例如,3000或更高,5000或更高,7000或更高,9000或更高,11000或更高,13000或更高,或15000或更高。又另一例子中,Mn可為約250000或更低,200000或更低,180000或更低,160000或更低,140000或更低,120000或更低,100000或更低,90000或更低,80000或更低,70000或更低,60000或更低,50000或更低,40000或更低,30000或更低,或25000或更低。嵌段共聚物的多分散性(Mw/Mn)可以在1.01至1.60的範圍內。另一例子 中,Mw/Mn可為約1.1或更高,約1.2或更高,約1.3或更高,或約1.4或更高。 The number average molecular weight (Mn) of the block copolymer may be, for example, in a range of 3,000 to 300,000. In the present specification, the "quantity average molecular weight" refers to a value measured by GPC and corrected based on a polystyrene standard, and in this specification, unless specified otherwise, "molecular weight" is an exponential average molecular weight. In another example, Mn may be, for example, 3000 or higher, 5000 or higher, 7000 or higher, 9000 or higher, 11000 or higher, 13000 or higher, or 15000 or higher. In yet another example, Mn may be about 250,000 or less, 200,000 or less, 180,000 or less, 160,000 or less, 140,000 or less, 120,000 or less, 100,000 or less, 90,000 or less, 80,000 or less, 70,000 or less, 60,000 or less, 50,000 or less, 40,000 or less, 30,000 or less, or 25,000 or less. The polydispersity (Mw / Mn) of the block copolymer may be in the range of 1.01 to 1.60. Another example In this case, Mw / Mn may be about 1.1 or higher, about 1.2 or higher, about 1.3 or higher, or about 1.4 or higher.
在此範圍內,嵌段共聚物可展現足夠的自組性。可以考慮感興趣的自組結構等,調整嵌段共聚物的Mn等。 Within this range, the block copolymer can exhibit sufficient self-assembly. The self-assembly structure and the like of interest can be considered, and the Mn and the like of the block copolymer can be adjusted.
嵌段共聚物至少含有前述嵌段1和嵌段2時,嵌段1(如,含有前述鏈的嵌段之比例)在以上嵌段共聚物中之比例可在10mol%至90mol%範圍內。 When the block copolymer contains at least the aforementioned block 1 and block 2, the proportion of the block 1 (eg, the proportion of the block containing the aforementioned chain) in the above block copolymer may be in the range of 10 mol% to 90 mol%.
本申請案中,對於製備以上嵌段共聚物的詳細方法沒有特別的限制,只要該方法包括藉由使用可形成前述結構單元各者之單體而形成嵌段共聚物的至少一個嵌段即可。 In this application, the detailed method for preparing the above block copolymer is not particularly limited as long as the method includes forming at least one block of the block copolymer by using a monomer that can form each of the aforementioned structural units .
例如,使用以上單體,在活性自由基聚合(LRP)方法中製得嵌段共聚物。該方法的例子包括藉陰離子聚合反應合成,其中有機稀土金屬錯合物或有機鹼金屬化合物作為聚合反應引發劑,此在鹼金屬和無機酸鹽(如鹼土金屬)存在下進行;藉陰離子聚合法合成,其中有機鹼金屬化合物作為聚合反應引發劑,此在有機鋁化合物存在下進行;原子轉移自由基聚合反應(ATRP)方法,其中ATRP劑作為聚合反應控制劑;藉電子轉移再生活化劑(ARGET)ATRP方法,其中ATRP劑作為聚合反應控制劑,但聚合反應發生於有機或無機還原劑(其產生電子)存在時;用於連續活化劑再生之引發劑(ICAR)ATRP方法;藉可逆性加成-裂鏈轉移(RAFT)方法之聚 合反應,其中,使用無機還原劑和RAFT劑;及使用有機碲化合物作為引發劑之方法,可自其中選用適當的方法。 For example, using the above monomers, a block copolymer is prepared in a living radical polymerization (LRP) method. Examples of this method include synthesis by anionic polymerization, in which an organic rare earth metal complex or an organic alkali metal compound is used as a polymerization initiator, which is performed in the presence of an alkali metal and an inorganic acid salt (such as an alkaline earth metal); by anionic polymerization Synthesis, in which an organic alkali metal compound is used as a polymerization initiator, which is performed in the presence of an organoaluminum compound; an atom transfer radical polymerization (ATRP) method, in which an ATRP agent is used as a polymerization control agent; ARGET) ATRP method, where the ATRP agent is used as a polymerization reaction control agent, but the polymerization reaction occurs in the presence of an organic or inorganic reducing agent (which generates electrons); an initiator (ICAR) ATRP method for continuous activator regeneration; Convergence of Addition-Split Chain Transfer (RAFT) Methods In the reaction, an inorganic reducing agent and a RAFT agent are used; and an organic tellurium compound is used as an initiator, and an appropriate method can be selected therefrom.
例如,前述嵌段共聚物可經由反應物(其包括能夠形成前述嵌段的單體)之聚合反應,藉由活性自由基聚合法,在自由基引發劑和活性自由基聚合反應劑存在下進行。 For example, the aforementioned block copolymer may be polymerized through a reactant (which includes a monomer capable of forming the aforementioned block) by a living radical polymerization method in the presence of a radical initiator and a living radical polymerization reaction agent. .
對於形成在製備嵌段共聚物的期間內與前述單體形成的嵌段一併含於嵌段共聚物中之的另一嵌段之方法沒有特別的限制;可以考慮用於形成其他嵌段之感興趣的嵌段類型,適當地選擇單體。 There is no particular limitation on the method of forming another block that is included in the block copolymer with the block formed by the aforementioned monomer during the preparation of the block copolymer; For the type of block of interest, the monomer is appropriately selected.
製備嵌段共聚物之程序可進一步包括,例如,使經由以上程序製得的聚合反應產物沉澱於非溶劑中。 The procedure for preparing the block copolymer may further include, for example, precipitating the polymerization reaction product obtained through the above procedure in a non-solvent.
對於自由基引發劑的類型沒有特別的限制,且可以考慮聚合效能,適當地選擇自由基引發劑;例如,可以使用偶氮化合物(如偶氮基雙異丁腈(AIBN)和2,2’-偶氮基雙-(2,4-二甲基戊腈)或過氧化物系列(如苄醯過氧化物(BPO)和二-三級丁基過氧化物(DTBP))。 There is no particular limitation on the type of the radical initiator, and the polymerization efficiency may be considered in consideration of the polymerization efficiency; for example, an azo compound such as azobisisobutyronitrile (AIBN) and 2,2 'may be used. -Azobis- (2,4-dimethylvaleronitrile) or peroxide series (such as benzamidine peroxide (BPO) and di-tertiary butyl peroxide (DTBP)).
活性自由基聚合程序可以,例如,在溶劑(如二氯甲烷、1,2-二氯乙烷、氯苯、二氯苯、苯、甲苯、丙酮、氯仿、四氫呋喃、二噁烷、單甘二甲醚(monoglyme)、二甘二甲醚(diglyme)、二甲基甲醯胺、二甲亞碸、和二甲基乙醯胺)中進行。 Living radical polymerization procedures can, for example, be performed in solvents such as dichloromethane, 1,2-dichloroethane, chlorobenzene, dichlorobenzene, benzene, toluene, acetone, chloroform, tetrahydrofuran, dioxane, monoglycan Monoglyme, diglyme, dimethylformamide, dimethylformamide, and dimethylacetamide).
非溶劑的例子包括,但不限於,醇(如甲醇、乙醇、正丙醇、和異丙醇)、二醇(如乙二醇)、正己烷、環己烷、正庚烷、和醚(如石油醚)。 Examples of non-solvents include, but are not limited to, alcohols (such as methanol, ethanol, n-propanol, and isopropanol), glycols (such as ethylene glycol), n-hexane, cyclohexane, n-heptane, and ether ( (Such as petroleum ether).
本申請案亦係關於含有前述嵌段共聚物之聚合物膜。該聚合物膜可用於各種應用(例如,各種電子或電力設備)、用於形成前述圖案之程序、用於磁性儲存記錄介質(如快閃記憶體)或用於生物感知器。 This application is also related to polymer films containing the aforementioned block copolymers. The polymer film can be used in various applications (for example, various electronic or electric equipment), a procedure for forming the aforementioned pattern, a magnetic storage recording medium such as a flash memory, or a biosensor.
一個例子中,前述嵌段共聚物可經由在前述聚合物膜中之自組而實現規則結構,如球、圓柱、螺旋二十四面體或層狀物。 In one example, the aforementioned block copolymer may realize a regular structure, such as a sphere, a cylinder, a spiral icosahedron or a layer, through self-assembly in the aforementioned polymer film.
例如,嵌段1、嵌段2或(在共價鍵結至嵌段1和嵌段2中之任一者之其他嵌段的鏈段中)鏈段在嵌段共聚物中形成規則結構,如層狀物形式或圓柱形式。 For example, block 1, block 2 or (in a segment covalently bonded to the other block of either block 1 or block 2) a segment forms a regular structure in a block copolymer, Such as layer form or cylindrical form.
本申請案中之以上聚合物膜可具有平面內繞射圖,其係在GISAXS分析期間內垂直於GISAXS繞射圖的x-分量的峰。另一例子中,在以上GISAXS繞射圖的x-分量上觀察到的峰數可為至少2,且,當有數個峰存在時,可觀察到的峰之散射向量q值為整數比。 The above polymer films in this application may have an in-plane diffraction pattern, which is a peak perpendicular to the x-component of the GISAXS diffraction pattern during the GISAXS analysis period. In another example, the number of peaks observed on the x-component of the above GISAXS diffraction pattern may be at least two, and when there are several peaks, the observed scattering vector q of the peaks is an integer ratio.
本申請案亦係關於藉由使用前述嵌段共聚物形成聚合物膜之方法。該方法可包括以自組狀態在基板上形成含有以上嵌段共聚物之聚合物膜。例如,以上方法包括藉澱積之類,在基板上形成以上嵌段共聚物的層或塗覆溶液(其中嵌段共聚物溶於適當溶劑中)的層,且,必要時,亦可包括對以上層進行退火或熱處理的程序。 This application also relates to a method for forming a polymer film by using the aforementioned block copolymer. The method may include forming a polymer film containing the above block copolymer on a substrate in a self-assembled state. For example, the above method includes forming a layer of the above block copolymer or a coating solution (where the block copolymer is dissolved in a suitable solvent) on the substrate by deposition or the like, and, if necessary, it may also include The procedure of annealing or heat treating the above layers.
以上退火或熱處理可以,例如,基於嵌段共聚物的相轉變溫度或玻璃轉變溫度而進行;例如,可以在等於或大於以上玻璃轉變溫度或相轉變溫度的溫度進行。未特別限制此熱處理的期間且可為,例如,在約1分鐘至72小時的範圍內,雖可視須要地加以改變。聚合物薄膜的熱處理溫度亦可為,例如,約100℃至250℃,其可取決於所用嵌段共聚物而改變。 The above annealing or heat treatment may be performed, for example, based on the phase transition temperature or glass transition temperature of the block copolymer; for example, it may be performed at a temperature equal to or greater than the above glass transition temperature or phase transition temperature. The period of this heat treatment is not particularly limited and may be, for example, in a range of about 1 minute to 72 hours, although it may be changed as necessary. The heat treatment temperature of the polymer film may also be, for example, about 100 ° C to 250 ° C, which may vary depending on the block copolymer used.
另一例子中,以上方式形成的層可以在室溫非極性溶劑和/或極性溶劑中進行約1分鐘至72小時的溶劑退火。 In another example, the layer formed in the above manner may be subjected to a solvent annealing in a non-polar solvent and / or a polar solvent at room temperature for about 1 minute to 72 hours.
本申請案亦係關於形成圖案之方法。以上方法可包括,例如,從由基板和形成於該基板上並含有以上自組的嵌段共聚物之聚合物膜所製成的積層物選擇性地移除該嵌段共聚物的嵌段1或嵌段2之方法。以上方法可為在以上基板上形成圖案之方法。例如,以上方法可包括在基板上形成含有以上嵌段共聚物的聚合物膜,選擇性地移除存在於以上膜中之嵌段共聚物的任一或更多個嵌段,及之後蝕刻此基板。以上方法有助於形成微細圖案,例如,奈米尺寸。此外,藉以上方法亦可形成多種圖案(如奈米條和奈米孔),此取決於聚合物膜中的嵌段共聚物結構。必要時,以上嵌段共聚物可以與另一共聚物、均聚物之類混合以形成圖案。未特別限制以上方法所施用之基板的類型且可經選擇以適合該施用;例如,可使用氧化矽。 This application also relates to a method for forming a pattern. The above method may include, for example, selectively removing blocks 1 of the block copolymer from a laminate made of a substrate and a polymer film formed on the substrate and containing the above self-assembled block copolymer. Or block 2 method. The above method may be a method of forming a pattern on the above substrate. For example, the above method may include forming a polymer film containing the above block copolymer on a substrate, selectively removing any one or more blocks of the block copolymer present in the above film, and then etching this Substrate. The above method helps to form fine patterns, for example, nanometer size. In addition, various patterns (such as nano-stripes and nano-pores) can be formed by the above method, which depends on the block copolymer structure in the polymer film. If necessary, the above block copolymer may be mixed with another copolymer, a homopolymer or the like to form a pattern. The type of substrate applied by the above method is not particularly limited and may be selected to suit the application; for example, silicon oxide may be used.
例如,以上方法可形成展現高深寬比的氧化 矽奈米尺寸圖案。可實現各種形式(如奈米條和奈米孔),例如,藉由在氧化矽上形成以上的聚合物膜,選擇性地移除以上聚合物膜(其中,嵌段共聚物構成預定結構)中之嵌段共聚物的任一嵌段,及之後藉各種技巧(例如,藉反應性離子蝕刻)中之任一者蝕刻氧化矽。以上方法亦有助於實現具有高深寬比的奈米圖案。 For example, the above methods can form oxides that exhibit high aspect ratios Silicon nano size pattern. Various forms (such as nano strips and nanopores) can be realized, for example, by forming the above polymer film on silicon oxide, the above polymer film can be selectively removed (where the block copolymer constitutes a predetermined structure) Either any block of the block copolymer, and later by any of a variety of techniques (e.g., by reactive ion etching) to etch the silicon oxide. The above method also helps to achieve a nano pattern with a high aspect ratio.
例如,可以數十奈米尺寸實現以上圖案,且此圖案可用於各種應用包括,例如,用於下一代資訊和電子產品的磁性記錄介質。 For example, the above pattern can be implemented in a size of tens of nanometers, and this pattern can be used in various applications including, for example, magnetic recording media for next-generation information and electronic products.
例如,可藉以上方法形成其寬度約3nm至40nm的奈米結構(如奈米線)間隔配置(如,間隔6nm至80nm)的圖案。另一例子中,亦可實現其寬度(如直徑)為約3nm至40nm之奈米孔以約6nm至80nm間隔配置的結構。 For example, the above method can be used to form a pattern of nanostructures (such as nanowires) with a width of about 3nm to 40nm, such as 6nm to 80nm. In another example, a structure in which nanopores having a width (such as a diameter) of about 3 nm to 40 nm are arranged at intervals of about 6 nm to 80 nm can be realized.
此外,以上結構中的奈米線或奈米孔可製成具有高深寬比。 In addition, the nanowires or nanopores in the above structure can be made to have a high aspect ratio.
以上方法中,對於選擇性地移除嵌段共聚物之任一嵌段的方法沒有特別的限制;例如,可以使用使得聚合膜以適當電磁波(如紫外射線)照射以移除相對軟嵌段之方法。此處,紫外射線照射條件由嵌段共聚物中的嵌段類型決定;例如,其可包括照射波長約254nm的紫外射線經1分鐘至60分鐘。 In the above method, there is no particular limitation on a method for selectively removing any block of the block copolymer; for example, a polymer film can be irradiated with an appropriate electromagnetic wave (such as ultraviolet rays) to remove relatively soft blocks method. Here, the ultraviolet irradiation conditions are determined by the type of the block in the block copolymer; for example, it may include irradiating ultraviolet rays having a wavelength of about 254 nm for 1 minute to 60 minutes.
此外,紫外射線照射之後,可藉由以酸之類處理聚合物膜的方式,進行進一步移除已事先藉紫外射線 瓦解之鏈段的程序。 In addition, after UV radiation, the polymer film can be further removed by treating the polymer film with an acid or the like. Procedures for disintegrating links.
此外,對於使用經選擇性地移除某些嵌段的聚合物膜作為遮罩,蝕刻基板之程序沒有特別的限制;例如,以上蝕刻可以經由以CF4/Ar離子之類的反應性離子蝕刻進行。以上蝕刻之後可經由氧電漿處理之類進行自基板移除聚合物膜的程序。 In addition, there is no particular limitation on the procedure for etching a substrate using a polymer film that selectively removes certain blocks as a mask; for example, the above etching can be performed by reactive ion etching such as CF 4 / Ar ions get on. After the above etching, the process of removing the polymer film from the substrate may be performed by an oxygen plasma treatment or the like.
本申請案提出嵌段共聚物及其用途。本申請案之嵌段共聚物展現極佳的自組性質或相分離性質,並因此而可以無限制地被賦予各種所要求的功能。 This application proposes block copolymers and uses thereof. The block copolymer of the present application exhibits excellent self-organizing properties or phase separation properties, and thus can be endowed with various required functions without limitation.
圖1出示實例1之聚合物膜的AFM結果。 FIG. 1 shows the AFM results of the polymer film of Example 1.
下文將藉由根據本申請案之實例更詳細地描述本申請案,但本申請案之範圍不限於下文提出的實例。 Hereinafter, the present application will be described in more detail by examples based on the present application, but the scope of the application is not limited to the examples set forth below.
藉以下方法合成以下結構式A所示化合物(1,2,4,5-四氟苯乙烯-3-三級戊酸酯):將五氟苯乙烯 (25g,129mmol)加至三級丁醇和氫氧化鉀(37.5g,161mmol)的400mL混合溶液中,使所得者全數迴流2小時;此反應物冷卻至室溫並於之後添加1200mL水;此加合物以二乙醚(300mL)萃取3次,使得先前反應中使用之殘留的丁醇揮發;含水溶液層以10重量%氫氯酸溶液酸化至pH約3以使得標的物沉澱;再度以二乙醚(300mL)萃取3次,收集有機層,以MgSO4脫水,並移除溶劑以得到粗產物(3-羥基-1,2,4,5-四氟苯乙烯);此粗產物以管柱層析法,使用己烷和二氯甲烷(DCM)作為流動相加以純化,以得到無色液體3-羥基-1,2,4,5-四氟苯乙烯(11.4g)。以上物質的NMR分析結果如下。 The following formula (1,2,4,5-tetrafluorostyrene-3-tertiary valerate) was synthesized by the following method: Pentafluorostyrene (25 g, 129 mmol) was added to tertiary butanol and In a 400 mL mixed solution of potassium hydroxide (37.5 g, 161 mmol), the resulting mixture was refluxed for 2 hours; the reaction was cooled to room temperature and then 1200 mL of water was added; the adduct was extracted 3 times with diethyl ether (300 mL) The residual butanol used in the previous reaction was volatilized; the aqueous solution layer was acidified to a pH of about 3 with a 10% by weight hydrochloric acid solution to precipitate the target substance; extracted again with diethyl ether (300 mL) 3 times, and the organic layer was collected, Dehydrate with MgSO 4 and remove the solvent to give the crude product (3-hydroxy-1,2,4,5-tetrafluorostyrene); this crude product was subjected to column chromatography using hexane and dichloromethane ( DCM) was purified as a mobile phase to give 3-hydroxy-1,2,4,5-tetrafluorostyrene (11.4 g) as a colorless liquid. The NMR analysis results of the above substances are as follows.
1H-NMR(DMSO-d):δ11.7(s,1H);δ6.60(dd,1H);δ5.89(d,1H);δ5.62(d,1H) 1 H-NMR (DMSO-d): δ11.7 (s, 1H); δ6.60 (dd, 1H); δ5.89 (d, 1H); δ5.62 (d, 1H)
將3-羥基-1,2,4,5-四氟苯乙烯(4.0g,21mmol)溶於DCM(200mL)中,於其中依序添加甲基丙烯酸(2.0g,23mmol)、N,N'-二環己基碳化二醯亞胺(DCC)(4.7g,23mmol)和對-二甲基胺基吡啶(DMAP)(1.g,8.4mmol);使此物質反應24小時,過濾移除脲副產物,移除溶劑,之後藉管柱層析法,使用DCM/己烷溶液純化,以得到透明的液態標的化合物1,2,4,5-四氟苯乙烯-3-三級戊酸酯(5.1g,19mmol,88%),其為以下結構式A所示者。以上化合物的NMR 分析結果如下。 3-Hydroxy-1,2,4,5-tetrafluorostyrene (4.0 g, 21 mmol) was dissolved in DCM (200 mL), and methacrylic acid (2.0 g, 23 mmol), N, N 'were sequentially added thereto. -Dicyclohexylcarbodiimide (DCC) (4.7 g, 23 mmol) and p-dimethylaminopyridine (DMAP) (1.g, 8.4 mmol); react this material for 24 hours, remove urea by filtration By-product, the solvent was removed, and then purified by column chromatography using DCM / hexane solution to obtain the transparent liquid target compound 1,2,4,5-tetrafluorostyrene-3-terevalerate (5.1 g, 19 mmol, 88%), which is represented by the following structural formula A. NMR of the above compounds The analysis results are as follows.
1H-NMR(CDCl3):δ6.64(dd,1H);δ6.07(d,1H);δ5.68(d,1H);δ1.38(s,9H). 1 H-NMR (CDCl3): δ6.64 (dd, 1H); δ6.07 (d, 1H); δ5.68 (d, 1H); δ1.38 (s, 9H).
為使用合成的單體聚合嵌段共聚物,使用偶氮基雙異丁腈(AIBN)作為聚合反應引發劑,其與可逆性加成-裂鏈轉移(RAFT)劑(2-氰基-2-丙基十二烷基三硫代碳酸酯)和以上化合物(結構式A所示者)以30:2:0.2(結構式A所示化合物:RAFT劑:AIBN)的重量比溶於苯甲醚中(固體濃度:30重量%)。使以上溶液在氮氣氛下於70℃反應4小時以合成巨引發劑(數量平均分子量:6800,分子量分佈:1.16),其與五氟苯乙烯和AIBN以1:490:10:0.5(巨引發劑:五氟苯乙烯:結構 式A所示化合物:AIBN)的重量比溶於苯甲醚中(固體濃度:70重量%)。使所製得的溶液在氮氣氛下於70℃反應5小時以製備嵌段共聚物。所製得的嵌段共聚物的數量平均分子量和分子量分佈分別是13800和1.15。 In order to use synthetic monomers to polymerize block copolymers, azobisisobutyronitrile (AIBN) is used as a polymerization initiator, which is combined with a reversible addition-chain-splitting transfer (RAFT) agent (2-cyano-2 -Propyl dodecyl trithiocarbonate) and the above compound (shown in Structural Formula A) are dissolved in benzyl in a weight ratio of 30: 2: 0.2 (Compound shown in Structural Formula A: RAFT agent: AIBN). In ether (solid concentration: 30% by weight). The above solution was reacted at 70 ° C. for 4 hours under a nitrogen atmosphere to synthesize a macroinitiator (number average molecular weight: 6800, molecular weight distribution: 1.16), which was 1: 490: 10: 0.5 (pentapriming) with pentafluorostyrene and AIBN. Agent: Pentafluorostyrene: Structure The weight ratio of the compound represented by Formula A: AIBN) was dissolved in anisole (solid concentration: 70% by weight). The prepared solution was reacted at 70 ° C. for 5 hours under a nitrogen atmosphere to prepare a block copolymer. The number average molecular weight and molecular weight distribution of the obtained block copolymer were 13,800 and 1.15, respectively.
使用實例1中合成的嵌段共聚物形成自組聚合物膜,並觀察其結果。此嵌段共聚物以0.7重量%的濃度溶於溶劑中,之後以3000rpm的速率旋轉塗覆於矽晶圓上約60秒以形成聚合物薄膜。此膜於160℃熱退火1小時以誘發微相分離,其結果示於以下圖1。 An ad hoc polymer film was formed using the block copolymer synthesized in Example 1, and the results were observed. This block copolymer was dissolved in a solvent at a concentration of 0.7% by weight, and then spin-coated on a silicon wafer at a rate of 3000 rpm for about 60 seconds to form a polymer film. This film was thermally annealed at 160 ° C for 1 hour to induce microphase separation. The results are shown in Figure 1 below.
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