TWI611253B - 遮罩基底用基板、遮罩基底、轉印用遮罩及其等之製造方法以及半導體元件之製造方法 - Google Patents
遮罩基底用基板、遮罩基底、轉印用遮罩及其等之製造方法以及半導體元件之製造方法 Download PDFInfo
- Publication number
- TWI611253B TWI611253B TW106117095A TW106117095A TWI611253B TW I611253 B TWI611253 B TW I611253B TW 106117095 A TW106117095 A TW 106117095A TW 106117095 A TW106117095 A TW 106117095A TW I611253 B TWI611253 B TW I611253B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mask
- transfer
- film
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 368
- 238000012546 transfer Methods 0.000 title claims abstract description 160
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 claims description 56
- 238000012937 correction Methods 0.000 claims description 39
- 238000004364 calculation method Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000001419 dependent effect Effects 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 14
- 230000007261 regionalization Effects 0.000 claims description 14
- 230000000873 masking effect Effects 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 139
- 230000003287 optical effect Effects 0.000 description 64
- 230000004075 alteration Effects 0.000 description 47
- 239000000523 sample Substances 0.000 description 45
- 238000009826 distribution Methods 0.000 description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 238000005286 illumination Methods 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 29
- 239000000463 material Substances 0.000 description 24
- 230000010363 phase shift Effects 0.000 description 24
- 230000006870 function Effects 0.000 description 23
- 239000012528 membrane Substances 0.000 description 18
- 238000005498 polishing Methods 0.000 description 18
- 229910052723 transition metal Inorganic materials 0.000 description 16
- 150000003624 transition metals Chemical class 0.000 description 15
- 238000010276 construction Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000011651 chromium Substances 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 239000013074 reference sample Substances 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000003908 quality control method Methods 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007863 gel particle Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 230000036555 skin type Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- -1 transition metal cerium compound Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Surface Treatment Of Glass (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013130443 | 2013-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201732416A TW201732416A (zh) | 2017-09-16 |
| TWI611253B true TWI611253B (zh) | 2018-01-11 |
Family
ID=52104687
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106117095A TWI611253B (zh) | 2013-06-21 | 2014-06-19 | 遮罩基底用基板、遮罩基底、轉印用遮罩及其等之製造方法以及半導體元件之製造方法 |
| TW103121129A TWI591423B (zh) | 2013-06-21 | 2014-06-19 | A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103121129A TWI591423B (zh) | 2013-06-21 | 2014-06-19 | A mask base substrate, a mask base, a transfer mask, a method of manufacturing the same, and a method of manufacturing the semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9690189B2 (enExample) |
| JP (2) | JP5690981B1 (enExample) |
| KR (2) | KR101992711B1 (enExample) |
| TW (2) | TWI611253B (enExample) |
| WO (1) | WO2014203961A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6266286B2 (ja) * | 2013-09-27 | 2018-01-24 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| US20170363952A1 (en) | 2014-12-19 | 2017-12-21 | Hoya Corporation | Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| TWI694304B (zh) * | 2015-06-08 | 2020-05-21 | 日商Ａｇｃ股份有限公司 | Ｅｕｖ微影術用反射型光罩基底 |
| JP6094708B1 (ja) * | 2015-09-28 | 2017-03-15 | 旭硝子株式会社 | マスクブランク |
| US10948814B2 (en) * | 2016-03-23 | 2021-03-16 | AGC Inc. | Substrate for use as mask blank, and mask blank |
| CN109463000B (zh) * | 2016-07-27 | 2022-03-29 | Hoya株式会社 | 掩模坯料用基板、掩模坯料、转印用掩模以及它们的制造方法、半导体器件的制造方法 |
| EP3364247A1 (en) * | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
| JP6229807B1 (ja) * | 2017-02-22 | 2017-11-15 | 旭硝子株式会社 | マスクブランク |
| US10552569B2 (en) * | 2017-09-11 | 2020-02-04 | Globalfoundries Inc. | Method for calculating non-correctable EUV blank flatness for blank dispositioning |
| JP6899080B2 (ja) | 2018-09-05 | 2021-07-07 | 信越半導体株式会社 | ウェーハ形状データ化方法 |
| US10859905B2 (en) | 2018-09-18 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Photomask and method for forming the same |
| JP6821865B2 (ja) * | 2018-09-27 | 2021-01-27 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
| JP2022551429A (ja) * | 2019-09-27 | 2022-12-09 | コーニング インコーポレイテッド | 平坦さ機能要件を満たすフォトマスクブランクを仕上げるための目標トポグラフィマップの生成提供装置、システムおよび方法 |
| JP2023088773A (ja) * | 2021-12-15 | 2023-06-27 | キオクシア株式会社 | 描画方法、原版製造方法および描画装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011122608A1 (ja) * | 2010-03-30 | 2011-10-06 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| TW201202866A (en) * | 2010-03-30 | 2012-01-16 | Zeiss Carl Smt Gmbh | Method for operating a projection exposure apparatus for microlithography with correction of imaging aberrations induced by rigorous effects of the mask |
| JP2013016710A (ja) * | 2011-07-05 | 2013-01-24 | Canon Inc | 決定方法、プログラム及び露光方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6440267A (en) | 1987-08-07 | 1989-02-10 | Shinetsu Chemical Co | Manufacture of precisely polished glass |
| JP2002184667A (ja) * | 2000-12-14 | 2002-06-28 | Nikon Corp | 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法 |
| JP3627805B2 (ja) | 2001-04-20 | 2005-03-09 | 信越化学工業株式会社 | フォトマスク用ガラス基板及びその製造方法 |
| JP4077288B2 (ja) * | 2002-09-30 | 2008-04-16 | 株式会社東芝 | フォトマスクの設計方法およびプログラム |
| JP2004296939A (ja) * | 2003-03-27 | 2004-10-21 | Toshiba Corp | 位置歪み補正装置、露光システム、露光方法及び位置歪み補正プログラム |
| JP4647510B2 (ja) | 2006-02-08 | 2011-03-09 | 東京エレクトロン株式会社 | 基板の欠陥検査方法及びプログラム |
| US7372633B2 (en) | 2006-07-18 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus, aberration correction device and device manufacturing method |
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| EP2219077A1 (en) * | 2009-02-12 | 2010-08-18 | Carl Zeiss SMT AG | Projection exposure method, projection exposure system and projection objective |
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2014
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- 2014-06-19 KR KR1020167003193A patent/KR101992711B1/ko active Active
- 2014-06-19 KR KR1020157024697A patent/KR101597186B1/ko active Active
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- 2014-06-19 WO PCT/JP2014/066263 patent/WO2014203961A1/ja not_active Ceased
- 2014-06-19 JP JP2014550578A patent/JP5690981B1/ja active Active
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2015
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| WO2011122608A1 (ja) * | 2010-03-30 | 2011-10-06 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| TW201202866A (en) * | 2010-03-30 | 2012-01-16 | Zeiss Carl Smt Gmbh | Method for operating a projection exposure apparatus for microlithography with correction of imaging aberrations induced by rigorous effects of the mask |
| JP2013016710A (ja) * | 2011-07-05 | 2013-01-24 | Canon Inc | 決定方法、プログラム及び露光方法 |
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| US9690189B2 (en) | 2017-06-27 |
| TWI591423B (zh) | 2017-07-11 |
| KR101597186B1 (ko) | 2016-02-24 |
| US20170248841A1 (en) | 2017-08-31 |
| JP6320944B2 (ja) | 2018-05-09 |
| JP5690981B1 (ja) | 2015-03-25 |
| JPWO2014203961A1 (ja) | 2017-02-23 |
| US10168613B2 (en) | 2019-01-01 |
| TW201514613A (zh) | 2015-04-16 |
| KR20160021899A (ko) | 2016-02-26 |
| JP2015111283A (ja) | 2015-06-18 |
| KR101992711B1 (ko) | 2019-06-25 |
| KR20150119121A (ko) | 2015-10-23 |
| TW201732416A (zh) | 2017-09-16 |
| WO2014203961A1 (ja) | 2014-12-24 |
| US20160109797A1 (en) | 2016-04-21 |
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