TWI606110B - Anisotropic conductive adhesive composition, film adhesive, connection structure, manufacturing method of connection structure and semiconductor device - Google Patents
Anisotropic conductive adhesive composition, film adhesive, connection structure, manufacturing method of connection structure and semiconductor device Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Adhesive Tapes (AREA)
- Wire Bonding (AREA)
Description
本發明是有關於一種異向導電性接著劑組成物。 This invention relates to an anisotropic conductive adhesive composition.
近年來,為了在半導體及液晶顯示器等的領域中將電子零件固定、或進行電路連接,而使用各種接著材料。這些用途中,高密度化、高精細化日益推進,而對接著劑亦要求高的接著力及連接可靠性。 In recent years, various bonding materials have been used in order to fix electronic components or to electrically connect them in the fields of semiconductors, liquid crystal displays, and the like. Among these applications, high density and high refinement are advancing, and high adhesion and connection reliability are required for the adhesive.
特別是作為液晶顯示器與捲帶式封裝(Tape Carrier Package,TCP)的連接、軟性印刷配線基板(Flexible Printed Circuit,FPC)與TCP的連接或FPC與印刷配線板的連接中的電路連接材料,使用在接著劑中分散有導電粒子的異向導電性接著劑。另外,最近,在將半導體矽晶片安裝於基板上時,並非進行先前的打線接合(wire bonding),而是進行將半導體矽晶片直接 安裝於基板上的所謂玻璃覆晶(Chip On Glass,COG)安裝,此處亦應用異向導電性接著劑。 In particular, it is used as a connection between a liquid crystal display and a tape carrier package (TCP), a connection between a flexible printed circuit (FPC) and a TCP, or a circuit connection material in a connection between an FPC and a printed wiring board. An anisotropic conductive adhesive of conductive particles is dispersed in the adhesive. In addition, recently, when a semiconductor germanium wafer is mounted on a substrate, the previous wire bonding is not performed, but the semiconductor germanium wafer is directly processed. A so-called chip on glass (COG) mounted on a substrate is also used here, and an anisotropic conductive adhesive is also applied here.
另外,近年來,在精密電子設備的領域中,電路的高密度化正在推進,而電極寬度及電極間隔變得極窄。因此,在使用先前的環氧樹脂系的電路連接用接著材料的連接條件下,存在產生配線的脫落、剝離、位置錯開等問題,在COG安裝中,存在產生因晶片與基板的熱膨脹差引起的翹曲的問題。而且為了低成本化,而必須提高產量,從而要求低溫(例如100℃~170℃)、短時間(例如10秒鐘以內)、換言之可低溫快速硬化的接著劑。 Further, in recent years, in the field of precision electronic equipment, the density of circuits has been increasing, and the electrode width and electrode spacing have become extremely narrow. Therefore, under the connection conditions of the conventional epoxy-based circuit-connecting bonding material, there are problems such as dropping, peeling, and positional deviation of the wiring, and in the COG mounting, there is a difference in thermal expansion between the wafer and the substrate. The problem of warping. Further, in order to reduce the cost, it is necessary to increase the yield, thereby requiring a low temperature (for example, 100 ° C to 170 ° C), a short time (for example, within 10 seconds), in other words, an adhesive which can be hardened rapidly at a low temperature.
作為陽離子聚合起始劑,例如提出有將下述通式(IX)所示的鋶鹽化合物作為主成分的陽離子聚合性物質的聚合起始劑(專利文獻1)。 As a cationic polymerization initiator, for example, a polymerization initiator of a cationically polymerizable substance having a sulfonium salt compound represented by the following formula (IX) as a main component is proposed (Patent Document 1).
[式(IX)中,Ra表示氫、甲基、乙醯基、甲氧基羰基、乙氧基羰基、苄氧基羰基、苯甲醯基、苯氧基羰基、9-茀基甲氧基羰基的任一種,Rb、Rc獨立地表示氫、鹵素、C1~C4的烷基的任一種,Rd表示C1~C4的烷基,Q表示鄰硝基苄基、間硝基苄基、二硝基苄基、三硝基苄基、α-萘基甲基、β-萘基甲基的任一種。X為 SbF6、AsF6、PF6、BF4的任一種。] [In the formula (IX), R a represents hydrogen, methyl, ethyl fluorenyl, methoxycarbonyl, ethoxycarbonyl, benzyloxycarbonyl, benzhydryl, phenoxycarbonyl, 9-fluorenylmethoxy Any one of the carbonyl groups, R b and R c independently represent any of hydrogen, halogen, C 1 -C 4 alkyl, R d represents a C 1 -C 4 alkyl group, and Q represents an o-nitrobenzyl group. Any of m-nitrobenzyl, dinitrobenzyl, trinitrobenzyl, α-naphthylmethyl, and β-naphthylmethyl. X is any one of SbF 6 , AsF 6 , PF 6 , and BF 4 . ]
另外,作為可藉由加熱而在短時間內使環氧樹脂硬化的聚合起始劑,提出有含有下述通式(X)或下述通式(XI)所示的鋶鹽化合物的陽離子聚合起始劑(專利文獻2)。 Further, as a polymerization initiator which can cure an epoxy resin in a short time by heating, cationic polymerization containing a phosphonium salt compound represented by the following formula (X) or the following formula (XI) is proposed. Starting agent (Patent Document 2).
[式(X)中,Re表示氫原子、烷基、鹵素原子、羧基或烷氧基羰基,Rf表示烷基,Rg表示可經取代的苯基或可經取代的萘基,X表示SbF6、AsF6、PF6或BF4。] [In the formula (X), R e represents a hydrogen atom, an alkyl group, a halogen atom, a carboxyl group or an alkoxycarbonyl group, R f represents an alkyl group, and R g represents a phenyl group which may be substituted or a naphthyl group which may be substituted, X Indicates SbF 6 , AsF 6 , PF 6 or BF 4 . ]
[式(XI)中,Rh表示氫原子、烷基、鹵素原子、羥基、烷氧基、羧基或烷醯基,Ri表示烷基,Rj表示烯基、α-烷基苄基、α,α-二烷基苄基、α-苯基苄基或茀基,X表示SbF6、AsF6、PF6或BF4。] [In the formula (XI), R h represents a hydrogen atom, an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group or an alkylhydrazine group, R i represents an alkyl group, and R j represents an alkenyl group, an α-alkylbenzyl group, α,α-dialkylbenzyl, α-phenylbenzyl or fluorenyl, and X represents SbF 6 , AsF 6 , PF 6 or BF 4 . ]
[專利文獻1]日本專利特開平3-237107號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 3-237107
[專利文獻2]日本專利特開平6-345726號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 6-345726
然而,本發明者等人進行了銳意研究,結果發現,若使用專利文獻1或專利文獻2所記載的陽離子聚合起始劑,則存在所得的異向導電性接著劑容易腐蝕金屬及半導體配線的問題。其原因推測是,在上述聚合起始劑中,雖然具有SbF6、AsF6、PF6或BF4作為X,但在X中,中心原子與氟原子的鍵結弱,而氟離子容易脫離。另外,為了製備可低溫快速硬化的(例如100℃~170℃、10秒鐘以內)接著劑,作為X,在SbF6、AsF6、PF6及BF4中,SbF6的活性最高而較佳,但就環境安全性的觀點而言,SbF6存在問題。 However, the inventors of the present invention conducted intensive studies and found that when the cationic polymerization initiator described in Patent Document 1 or Patent Document 2 is used, the resulting anisotropic conductive adhesive easily corrodes metal and semiconductor wiring. problem. The reason for this is presumed that in the above polymerization initiator, SbF 6 , AsF 6 , PF 6 or BF 4 is used as X, but in X, the bond between the central atom and the fluorine atom is weak, and the fluoride ion is easily removed. In addition, in order to prepare an adhesive capable of rapid hardening at a low temperature (for example, 100 ° C to 170 ° C for less than 10 seconds), as X, SbF 6 has the highest activity and preferably in SbF 6 , AsF 6 , PF 6 and BF 4 . However, there is a problem with SbF 6 from the viewpoint of environmental safety.
本發明是鑒於上述情況而成,目的是提供一種可在低溫短時間內接著、連接可靠性優異、且保存穩定性優異的異向導電性接著劑組成物及將這些組成物形成為膜狀而成的膜狀接著劑。另外,目的是提供一種使用這些異向導電性接著劑組成物的連接結構體及其製造方法以及半導體裝置。 The present invention has been made in view of the above circumstances, and it is an object of the invention to provide an anisotropic conductive adhesive composition which is excellent in connection reliability and excellent in storage stability at a low temperature for a short period of time, and which is formed into a film shape. A film-like adhesive. Further, it is an object of the invention to provide a bonded structure using the anisotropic conductive adhesive composition, a method for producing the same, and a semiconductor device.
本發明提供下述(1)~(10)所述之異向導電性接著劑組成物及將這些組成物形成為膜狀而成的下述(11)所述之膜狀接著劑。另外,提供使用這些異向導電性接著劑組成物的連接結構體及其製造方法以及半導體裝置。 The present invention provides the anisotropic conductive adhesive composition according to the above (1) to (10), and a film-like adhesive agent according to the following (11), which is formed into a film shape. Further, a connection structure using the anisotropic conductive adhesive composition, a method for producing the same, and a semiconductor device are provided.
(1)一種異向導電性接著劑組成物,其含有下述成分而成:(A)下述通式(I)所示的鋶鹽化合物、(B)陽離子聚合性物質、及(C)導電粒子:
[式中,R1表示經取代或未經取代的芳基甲基、或經取代或未經取代的烯丙基,R2及R3分別獨立地表示烷基、或經取代或未經取代的芳基,Y-表示[P(R4)a(F)6-a]-(式中,R4表示氫原子的至少一部分被氟原子取代的烷基,a表示1~6的整數;在a為2以上的整數時,多個存在的R4可彼此相同亦可不同)、或[C((R5)SO2)3]-(式中,R5表示氫原子的至少一部分被氟原子取代的烷基,多個存在的R5可彼此相同亦可不同);其中,R2及R3可鍵結在一起而形成環,在R1為經取代或未經取代的芳基甲基時,R2及R3的至少一個為經取代或未經取代的芳基,在R1為經取代或未經取代的烯丙基時,R2及R3為烷基、或R2及R3為R2與R3鍵結在一起形成的環]。 Wherein R 1 represents a substituted or unsubstituted arylmethyl group, or a substituted or unsubstituted allyl group, and R 2 and R 3 each independently represent an alkyl group, or a substituted or unsubstituted group; An aryl group, Y - represents [P(R 4 ) a (F) 6-a ] - (wherein R 4 represents an alkyl group in which at least a part of a hydrogen atom is substituted by a fluorine atom, and a represents an integer of 1 to 6; When a is an integer of 2 or more, a plurality of R 4 present may be the same or different from each other), or [C((R 5 )SO 2 ) 3 ] - (wherein R 5 represents at least a part of a hydrogen atom is a fluorine atom-substituted alkyl group, a plurality of R 5 present may be the same or different from each other); wherein R 2 and R 3 may be bonded together to form a ring, and R 1 is a substituted or unsubstituted aryl group; In the case of a methyl group, at least one of R 2 and R 3 is a substituted or unsubstituted aryl group, and when R 1 is a substituted or unsubstituted allyl group, R 2 and R 3 are an alkyl group, or R. 2 and R 3 are a ring formed by bonding R 2 and R 3 together].
(2)如上述(1)所述之異向導電性接著劑組成物,其中作為上述(A)成分,含有下述通式(II)所示的鋶鹽化合物:
[式中,Ar1及Ar2分別獨立地表示經取代或未經取代的芳基,Y-與上述同義]。 [wherein, Ar 1 and Ar 2 each independently represent a substituted or unsubstituted aryl group, and Y - is synonymous with the above].
(3)如上述(2)所述之異向導電性接著劑組成物,其中作為上述(A)成分,含有下述通式(III)所示的鋶鹽化合物:
[式中,Y-與上述同義]。 [wherein, Y - is synonymous with the above].
(4)如上述(1)所述之異向導電性接著劑組成物,其中作為上述(A)成分,含有下述通式(IV)所示的鋶鹽化合物:
[式中,A1及A2分別獨立地表示烷基,R6、R7及R8分別獨立地表示氫原子、烷基、或經取代或未經取代的芳基,Y-與上述同義;其中,A1及A2可鍵結在一起而形成環]。 Wherein A 1 and A 2 each independently represent an alkyl group, and R 6 , R 7 and R 8 each independently represent a hydrogen atom, an alkyl group, or a substituted or unsubstituted aryl group, and Y - is synonymous with the above Wherein A 1 and A 2 may be bonded together to form a ring].
(5)如上述(4)所述之異向導電性接著劑組成物,其中作為上述(A)成分,含有通式(V)、通式(VI)、通式(VII)或通式(VIII)所示的鋶鹽化合物:
[式中,Y-與上述同義]。 [wherein, Y - is synonymous with the above].
(6)如上述(1)至(5)中任一項所述之異向導電性接著劑組成物,其中作為上述(A)成分,含有在對與縮水甘油醚型環氧化合物的混合物的示差掃描熱量測定中給出峰值溫度為40℃~150℃的鋶鹽化合物。 The anisotropic conductive adhesive composition according to any one of the above (1), wherein the component (A) is contained in a mixture with a glycidyl ether type epoxy compound. An onium salt compound having a peak temperature of 40 ° C to 150 ° C is given in the differential scanning calorimetry.
(7)如上述(1)至(6)中任一項所述之異向導電性接著劑組成物,其中作為上述(B)成分,含有選自由環氧化合物、氧雜環丁烷化合物(oxetane compound)及乙烯醚化合物所組成的組群的至少一種。 The anisotropic conductive adhesive composition according to any one of the above (1), wherein the component (B) is selected from the group consisting of an epoxy compound and an oxetane compound ( At least one of a group consisting of oxetane compound) and a vinyl ether compound.
(8)如上述(1)至(7)中任一項所述之異向導電性接著劑 組成物,其中進一步含有(D)膜形成性聚合物。 (8) An anisotropic conductive adhesive according to any one of the above (1) to (7) The composition further contains (D) a film-forming polymer.
(9)如上述(1)至(8)中任一項所述之異向導電性接著劑組成物,其用作電路連接用接著劑。 (9) The anisotropic conductive adhesive composition according to any one of the above (1) to (8), which is used as an adhesive for circuit connection.
(10)如上述(1)至(9)中任一項所述之異向導電性接著劑組成物,其藉由加熱而硬化。 (10) The anisotropic conductive adhesive composition according to any one of (1) to (9) above which is hardened by heating.
(11)一種膜狀接著劑,其將如上述(1)至(10)中任一項所述之異向導電性接著劑組成物形成為膜狀而成。 (11) A film-like adhesive comprising the anisotropic conductive adhesive composition according to any one of the above (1) to (10) in a film form.
(12)一種連接結構體,其具備:具有第一電路電極的第一電路構件,具有第二電路電極的第二電路構件,以及配置於上述第一電路構件及上述第二電路構件之間、且將上述第一電路電極與上述第二電路電極進行電性連接的電路連接構件;上述電路連接構件包含如上述(1)至(10)中任一項所述之異向導電性接著劑組成物的硬化物。 (12) A connection structure comprising: a first circuit member having a first circuit electrode; a second circuit member having a second circuit electrode; and being disposed between the first circuit member and the second circuit member, And a circuit connecting member electrically connecting the first circuit electrode and the second circuit electrode; wherein the circuit connecting member comprises the anisotropic conductive adhesive according to any one of (1) to (10) above Hardened matter.
(13)一種連接結構體的製造方法,其具備以下步驟:在具有第一電路電極的第一電路構件、與具有第二電路電極的第二電路構件之間,配置如上述(1)至(10)中任一項所述之異向導電性接著劑組成物,經由上述異向導電性接著劑組成物,將上述第一電路構件及上述第二電路構件加熱及加壓,而將上述第一電路電極及上述第二電路電極進行電性連接。 (13) A method of manufacturing a connection structure comprising the steps of: (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) to (1) The anisotropic conductive adhesive composition according to any one of the preceding claims, wherein the first circuit member and the second circuit member are heated and pressurized via the anisotropic conductive adhesive composition; A circuit electrode and the second circuit electrode are electrically connected.
(14)一種半導體裝置,其具備:半導體元件,具有電路圖案的基板,以及配置於上述半導體元件及上述基板之間、且將上述半導體元件與上述電路圖案進行電性連接的半導體元件連接構 件;上述半導體元件連接構件包含如上述(1)至(10)中任一項所述之異向導電性接著劑組成物的硬化物。 (14) A semiconductor device comprising: a semiconductor element; a substrate having a circuit pattern; and a semiconductor element connection structure disposed between the semiconductor element and the substrate and electrically connecting the semiconductor element and the circuit pattern The semiconductor element connecting member includes the cured product of the anisotropic conductive adhesive composition according to any one of the above (1) to (10).
本發明進而可關於一種作為如上述(1)至(10)中任一項所述之異向導電性接著劑組成物或如上述(11)所述之膜狀接著劑的電路連接用接著劑的應用、或用以製造該異向導電性接著劑組成物或膜狀接著劑的電路連接用接著劑的應用。 The present invention further relates to an adhesive for circuit connection as the composition of the anisotropic conductive adhesive according to any one of the above (1) to (10) or the film-like adhesive according to the above (11) Application, or application of an adhesive for circuit connection for producing the anisotropic conductive adhesive composition or film-like adhesive.
根據本發明,可提供一種能在低溫短時間內接著、連接可靠性優異、且保存穩定性優異的異向導電性接著劑組成物及將這些組成物形成為膜狀而成的膜狀接著劑。另外,可提供一種使用這些異向導電性接著劑組成物的連接結構體及其製造方法以及半導體裝置。 According to the present invention, it is possible to provide an anisotropic conductive adhesive composition which is excellent in connection reliability and excellent in storage stability at a low temperature for a short period of time, and a film-like adhesive which is formed into a film shape by using these compositions. . Further, a connection structure using the anisotropic conductive adhesive composition, a method for producing the same, and a semiconductor device can be provided.
1‧‧‧膜狀接著劑 1‧‧‧membranous adhesive
2‧‧‧半導體裝置 2‧‧‧Semiconductor device
5‧‧‧接著劑成分 5‧‧‧Binder ingredients
7‧‧‧導電粒子((C)成分) 7‧‧‧Conducting particles ((C) composition)
10‧‧‧電路連接構件 10‧‧‧Circuit connection components
11‧‧‧絕緣性物質 11‧‧‧Insulating substances
20‧‧‧第一電路構件 20‧‧‧First circuit component
21‧‧‧電路基板(第一電路基板) 21‧‧‧Circuit board (first circuit board)
21a‧‧‧主面 21a‧‧‧Main face
22‧‧‧電路電極(第一電路電極) 22‧‧‧Circuit electrode (first circuit electrode)
30‧‧‧第二電路構件 30‧‧‧Second circuit components
31‧‧‧電路基板(第二電路基板) 31‧‧‧Circuit board (second circuit board)
31a‧‧‧主面 31a‧‧‧Main face
32‧‧‧電路電極(第二電路電極) 32‧‧‧Circuit electrode (second circuit electrode)
50‧‧‧半導體元件 50‧‧‧Semiconductor components
60‧‧‧基板 60‧‧‧Substrate
60a‧‧‧主面 60a‧‧‧ main face
61‧‧‧電路圖案 61‧‧‧ circuit pattern
70‧‧‧密封材 70‧‧‧ Sealing material
80‧‧‧半導體元件連接構件 80‧‧‧Semiconductor component connecting member
A、B‧‧‧箭頭 A, B‧‧ arrows
圖1是表示膜狀接著劑的一個實施形態的示意剖面圖。 Fig. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive.
圖2是表示連接結構體的一個實施形態的示意剖面圖。 Fig. 2 is a schematic cross-sectional view showing an embodiment of a connection structure.
圖3中的(a)~(c)分別是製造連接結構體的一系列的步驟圖。 (a) to (c) in Fig. 3 are a series of step diagrams for manufacturing a connection structure, respectively.
圖4是表示半導體裝置的一個實施形態的部分剖面圖。 4 is a partial cross-sectional view showing an embodiment of a semiconductor device.
圖5是表示硬化率測定試驗中所得的實施例1~實施例4、以及比較例1及比較例4的膜狀接著劑的硬化溫度與硬化率的關係的圖表。 5 is a graph showing the relationship between the curing temperature and the curing rate of the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 and 4 obtained in the curing rate measurement test.
以下,對本發明的較佳的實施形態進行詳細地說明。但本發明並不限定於以下實施形態。 Hereinafter, preferred embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.
[異向導電性接著劑組成物] [Anisotropic Conductive Adhesive Composition]
本實施形態的異向導電性接著劑組成物(以下,亦簡稱為「接著劑組成物」)含有:(A)通式(I)所示的鋶鹽化合物(以下,根據情況稱為「(A)成分」)、(B)陽離子聚合性物質(以下,根據情況稱為「(B)成分」)、及(C)導電粒子。 The anisotropic conductive adhesive composition (hereinafter also referred to simply as "adhesive composition") of the present embodiment contains: (A) an onium salt compound represented by the general formula (I) (hereinafter, referred to as "( A) component "), (B) a cationically polymerizable substance (hereinafter referred to as "(B) component"), and (C) conductive particles.
上述鋶鹽化合物為下述通式(I)所示的化合物。 The onium salt compound is a compound represented by the following formula (I).
式中,R1表示經取代或未經取代的芳基甲基、或經取代或未經取代的烯丙基,R2及R3分別獨立地表示烷基、或經取代或未經取代的芳基,Y-表示抗衡陰離子。其中,R2及R3可鍵結在一起而形成環。 In the formula, R 1 represents a substituted or unsubstituted arylmethyl group, or a substituted or unsubstituted allyl group, and R 2 and R 3 each independently represent an alkyl group, or a substituted or unsubstituted one. Aryl, Y - represents a counter anion. Wherein R 2 and R 3 may be bonded together to form a ring.
作為烷基,例如可列舉:碳數1~6的烷基。更具體而言,可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、己基。這些可具有取代基,取代基的取代位置並無特別限定,可為任一位置。 Examples of the alkyl group include an alkyl group having 1 to 6 carbon atoms. More specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a pentyl group, and a hexyl group are mentioned. These may have a substituent, and the substitution position of the substituent is not particularly limited and may be any position.
作為芳基,例如可列舉:碳數6~12的芳基。更具體而 言,可列舉:苯基、1-萘基、2-萘基。這些可具有取代基,取代基的取代位置並無特別限定,可為任一位置。 Examples of the aryl group include an aryl group having 6 to 12 carbon atoms. More specific In addition, a phenyl group, a 1-naphthyl group, and a 2-naphthyl group are mentioned. These may have a substituent, and the substitution position of the substituent is not particularly limited and may be any position.
作為芳基甲基,例如可列舉:甲基中的氫原子的1個被上述芳基取代而成者。更具體而言,可列舉:苄基、1-萘基甲基、2-萘基甲基。這些可具有取代基,取代基的取代位置並無特別限定,可為任一位置。 Examples of the arylmethyl group include those in which one of hydrogen atoms in the methyl group is substituted with the above aryl group. More specifically, a benzyl group, a 1-naphthylmethyl group, and a 2-naphthylmethyl group are mentioned. These may have a substituent, and the substitution position of the substituent is not particularly limited and may be any position.
作為R2及R3可鍵結在一起而形成的環,可列舉:下述式(α)所示者。這些可具有取代基,取代基的取代位置並無特別限定,可為任一位置。 Examples of the ring formed by bonding R 2 and R 3 together include those represented by the following formula (α). These may have a substituent, and the substitution position of the substituent is not particularly limited and may be any position.
作為上述各基團可具有的取代基,例如可列舉:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、己基等烷基;苯基、萘基等芳基;甲氧基、乙氧基、丙氧基、丁氧基等烷氧基;乙醯氧基、丙醯氧基、癸基羰氧基、十二烷基羰氧基等烷氧基羰基;甲氧基羰基、乙氧基羰基、苯甲醯氧基等酯基;氟、氯、溴、碘等鹵素原子;氰基、硝基、羥基。這些取代基的取代位置並無特別限定,可為任一位置。 Examples of the substituent which each of the above groups may have include an alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tributyl group, a pentyl group or a hexyl group; and a phenyl group; An aryl group such as a naphthyl group; an alkoxy group such as a methoxy group, an ethoxy group, a propoxy group or a butoxy group; an ethoxy group, a propenyloxy group, a decylcarbonyloxy group or a dodecylcarbonyloxy group; An alkoxycarbonyl group; an ester group such as a methoxycarbonyl group, an ethoxycarbonyl group or a benzylideneoxy group; a halogen atom such as fluorine, chlorine, bromine or iodine; a cyano group, a nitro group and a hydroxyl group. The substitution position of these substituents is not particularly limited and may be any position.
另外,在具有取代基的烯丙基中,在具有順反異構物(cis-trans isomer)時,可為任意的異構物。 Further, in the allyl group having a substituent, when it has a cis-trans isomer, it may be any isomer.
Y-所示的抗衡陰離子為[P(R4)a(F)6-a]-(式中,R4表示氫原子的至少一部分被氟原子取代的烷基,a表示1~6的整數。a為2以上的整數時,多個存在的R4可彼此相同亦可不同)、或[C((R5)SO2)3]-(式中,R5表示氫原子的至少一部分被氟原子取代的烷基,多個存在的R5可彼此相同亦可不同)。Y-較佳為親核性低。 The counter anion represented by Y - is [P(R 4 ) a (F) 6-a ] - (wherein R 4 represents an alkyl group in which at least a part of a hydrogen atom is substituted by a fluorine atom, and a represents an integer of 1 to 6 When a is an integer of 2 or more, a plurality of R 4 present may be the same or different), or [C((R 5 )SO 2 ) 3 ] - (wherein R 5 represents at least a part of a hydrogen atom is The fluorine atom-substituted alkyl group, a plurality of R 5 present may be the same or different from each other). Y - preferably has a low nucleophilicity.
另外,作為[P(R4)a(F)6-a]-,較佳為R4的烷基中的氫原子的80%以上被氟原子取代,更佳為R4的烷基中的氫原子的90%以上被氟原子取代,尤佳為R4為直鏈或支鏈的全氟烷基。具體而言,可列舉:[P(CF3)3(F)3]-、[P(C2F5)3(F)3]-及[P(n-C3F7)3(F)3]-等。這些抗衡陰離子可單獨使用,亦可組合2種以上而使用。 Further, [P (R 4) a ( F) 6-a] -, preferably is less than 80% R-fluoro-4 alkyl group in which the hydrogen atoms replaced by an atom, more preferably R 4 is an alkyl group More than 90% of the hydrogen atoms are substituted by a fluorine atom, and it is particularly preferred that R 4 is a linear or branched perfluoroalkyl group. Specifically, [P(CF 3 ) 3 (F) 3 ] - , [P(C 2 F 5 ) 3 (F) 3 ] - and [P(nC 3 F 7 ) 3 (F) 3 ] - Wait. These counter anions may be used singly or in combination of two or more.
另外,作為[C((R5)SO2)3]-,較佳為R5的烷基中的氫原子的80%以上被氟原子取代,更佳為R5的烷基中的氫原子的90%以上被氟原子取代,尤佳為R5為直鏈或支鏈的全氟烷基。具體而言,可列舉:[C(CF3SO2)3]-、[C(C2F5SO2)3]-及[C(n-C3F7SO2)3]-等。這些抗衡陰離子可單獨使用,亦可組合2種以上而使用。 Further, as [C ((R 5) SO 2) 3] -, substituted with a fluorine atom is preferably 80% or more of the hydrogen atoms in the R 5 alkyl group, more preferably a hydrogen atom R is an alkyl group in the 5 More than 90% of the fluorine atoms are substituted by a fluorine atom, and it is particularly preferred that R 5 is a linear or branched perfluoroalkyl group. Specific examples thereof include [C(CF 3 SO 2 ) 3 ] - , [C(C 2 F 5 SO 2 ) 3 ] - and [C(nC 3 F 7 SO 2 ) 3 ] - and the like. These counter anions may be used singly or in combination of two or more.
作為鋶鹽化合物,較佳為上述R1為經取代或未經取代的芳基甲基、上述R2為經取代或未經取代的芳基、R3為甲基的通式(II)所示的鋶鹽化合物。含有此種鋶鹽化合物而成的接著劑組成物,保存穩定性與低溫快速硬化性優異。 As the onium salt compound, the above formula (II) wherein R 1 is a substituted or unsubstituted arylmethyl group, the above R 2 is a substituted or unsubstituted aryl group, and R 3 is a methyl group is preferred. The guanidinium salt compound shown. The adhesive composition containing such an onium salt compound is excellent in storage stability and rapid low-temperature hardenability.
另外,亦較佳為上述R1為經取代或未經取代的烯丙基、上述R2及R3為烷基、或R2及R3為R2與R3鍵結在一起形成的環 的通式(IV)所示的鋶鹽化合物。含有此種鋶鹽化合物而成的接著劑組成物,保存穩定性與低溫快速硬化性優異。 Further, it is also preferred that the above R 1 is a substituted or unsubstituted allyl group, the above R 2 and R 3 are an alkyl group, or R 2 and R 3 are a ring in which R 2 and R 3 are bonded together. An onium salt compound represented by the formula (IV). The adhesive composition containing such an onium salt compound is excellent in storage stability and rapid low-temperature hardenability.
作為鋶鹽化合物的具體例,可列舉:α-萘基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、聯苯甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、苯基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、1-甲基-苯基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、2-甲基-苯基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、茀基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、α-萘基甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、聯苯甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、苯基甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、1-甲基-苯基甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、2-甲基-苯基甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、茀基甲基-4-乙醯基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、α-萘基甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、聯苯甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、苯基甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、1-甲基-苯基甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、2-甲基-苯基甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、茀基甲基-4-甲氧基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、2-丁烯基二甲基鋶三(全氟乙基)三氟磷酸鹽、3-甲基-2-丁烯基二甲基鋶三(全氟乙基)三氟磷酸鹽、肉桂基二甲基鋶三(全氟乙基)三氟磷酸鹽、2-丁烯基四亞甲基鋶三(全氟乙基)三氟磷酸 鹽、3-甲基-2-丁烯基四亞甲基鋶三(全氟乙基)三氟磷酸鹽、肉桂基四亞甲基鋶三(全氟乙基)三氟磷酸鹽、α-萘基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、聯苯甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、苯基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、1-甲基-苯基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、2-甲基-苯基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、茀基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、α-萘基甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、聯苯甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、苯基甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、1-甲基-苯基甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、2-甲基-苯基甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、茀基甲基-4-乙醯基苯基甲基鋶三(三氟甲磺醯基)甲基化物、α-萘基甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、聯苯甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、苯基甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、1-甲基-苯基甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、2-甲基-苯基甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、茀基甲基-4-甲氧基苯基甲基鋶三(三氟甲磺醯基)甲基化物、2-丁烯基二甲基鋶三(三氟甲磺醯基)甲基化物、3-甲基-2-丁烯基二甲基鋶三(三氟甲磺醯基)甲基化物、肉桂基二甲基鋶三(三氟甲磺醯基)甲基化物、2-丁烯基四亞甲基鋶三(三氟甲磺醯基)甲基化物、3-甲基-2-丁烯基四 亞甲基鋶三(三氟甲磺醯基)甲基化物、肉桂基四亞甲基鋶三(三氟甲磺醯基)甲基化物等。作為(A)成分,可單獨使用鋶鹽化合物中的一種,亦可組合二種以上而使用。 Specific examples of the onium salt compound include α-naphthylmethyl-4-hydroxyphenylmethylsulfonium tris(perfluoroethyl)trifluorophosphate and biphenylmethyl-4-hydroxyphenylmethyl Tris(perfluoroethyl)trifluorophosphate, phenylmethyl-4-hydroxyphenylmethyltris(perfluoroethyl)trifluorophosphate, 1-methyl-phenylmethyl-4- Hydroxyphenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate, 2-methyl-phenylmethyl-4-hydroxyphenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate, fluorenyl Methyl-4-hydroxyphenylmethyltris(perfluoroethyl)trifluorophosphate, α-naphthylmethyl-4-ethenylphenylmethyltris(perfluoroethyl)trifluorophosphate Salt, biphenylmethyl-4-ethenylphenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate, phenylmethyl-4-ethenylphenylmethyl sulfonium tris(perfluoroethyl Trifluorophosphate, 1-methyl-phenylmethyl-4-ethenylphenylmethyltris(perfluoroethyl)trifluorophosphate, 2-methyl-phenylmethyl-4- Ethyl phenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate, decylmethyl-4-ethenyl phenylmethyl hydrazine tris(perfluoroethyl)trifluorophosphate, α-naphthalene Methyl-4-methoxyphenylmethyl Tris(perfluoroethyl)trifluorophosphate, biphenylmethyl-4-methoxyphenylmethylsulfonium tris(perfluoroethyl)trifluorophosphate, phenylmethyl-4-methoxybenzene Methyl hydrazine tris(perfluoroethyl)trifluorophosphate, 1-methyl-phenylmethyl-4-methoxyphenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate, 2- Methyl-phenylmethyl-4-methoxyphenylmethylsulfonium tris(perfluoroethyl)trifluorophosphate, mercaptomethyl-4-methoxyphenylmethylhydrazine III (perfluoro Trifluorophosphate, 2-butenyl dimethyl sulfonium tris(perfluoroethyl)trifluorophosphate, 3-methyl-2-butenyl dimethyl sulfonium tris(perfluoroethyl) Fluorophosphate, cinnamyl dimethyl sulfonium tris(perfluoroethyl)trifluorophosphate, 2-butenyltetramethylene sulfonium tris(perfluoroethyl)trifluorophosphate Salt, 3-methyl-2-butenyltetramethylenesulfonium tris(perfluoroethyl)trifluorophosphate, cinnamyltetramethylenesulfonium tris(perfluoroethyl)trifluorophosphate, α- Naphthylmethyl-4-hydroxyphenylmethylsulfonium tris(trifluoromethanesulfonyl)methide, biphenylmethyl-4-hydroxyphenylmethylsulfonium tris(trifluoromethanesulfonyl)methyl Compound, phenylmethyl-4-hydroxyphenylmethyl sulfonium tris(trifluoromethanesulfonyl) methide, 1-methyl-phenylmethyl-4-hydroxyphenylmethyl sulfonium tris(trifluoro Methanesulfonyl)methylate, 2-methyl-phenylmethyl-4-hydroxyphenylmethylsulfonium tris(trifluoromethanesulfonyl)methide, mercaptomethyl-4-hydroxyphenyl Methyl sulfonium tris(trifluoromethanesulfonyl) methide, α-naphthylmethyl-4-ethenyl phenylmethyl sulfonium tris(trifluoromethanesulfonyl) methide, biphenylmethyl -4-Ethylphenylmethyl sulfonium tris(trifluoromethanesulfonyl) methide, phenylmethyl-4-ethenylphenylmethyl sulfonium tris(trifluoromethanesulfonyl)methyl , 1-methyl-phenylmethyl-4-ethenylphenylmethyl sulfonium tris(trifluoromethanesulfonyl) methide, 2-methyl-phenylmethyl-4-ethenyl Phenylmethyl hydrazine tris(trifluoromethanesulfonyl) methylation , mercaptomethyl-4-ethoxymethylphenylmethyltris(trifluoromethanesulfonyl)methide, α-naphthylmethyl-4-methoxyphenylmethylhydrazine three (three Fluoromethanesulfonyl)methide, biphenylmethyl-4-methoxyphenylmethyltris(trifluoromethanesulfonyl)methide, phenylmethyl-4-methoxyphenyl Methyl sulfonium tris(trifluoromethanesulfonyl) methide, 1-methyl-phenylmethyl-4-methoxyphenylmethyl sulfonium tris(trifluoromethanesulfonyl) methide, 2 -methyl-phenylmethyl-4-methoxyphenylmethylsulfonium tris(trifluoromethanesulfonyl)methide, mercaptomethyl-4-methoxyphenylmethylhydrazine three (three Fluoromethanesulfonyl)methide, 2-butenyldimethylsulfonium tris(trifluoromethanesulfonyl)methide, 3-methyl-2-butenyldimethylsulfonium tris(trifluoro Methanesulfonyl)methylate, cinnamyl dimethyl sulfonium tris(trifluoromethanesulfonyl) methide, 2-butenyltetramethylene sulfonium tris(trifluoromethanesulfonyl) methide 3-methyl-2-butenyl four Methylene sulfonium tris(trifluoromethanesulfonyl) methide, cinnamyltetramethylene sulfonium tris(trifluoromethanesulfonyl) methoxide, and the like. As the component (A), one of the phosphonium salt compounds may be used alone or two or more of them may be used in combination.
特別是含有α-萘基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽、3-甲基-2-丁烯基二甲基鋶三(全氟乙基)三氟磷酸鹽、肉桂基二甲基鋶三(全氟乙基)三氟磷酸鹽、3-甲基-2-丁烯基四亞甲基鋶三(全氟乙基)三氟磷酸鹽、肉桂基四亞甲基鋶三(全氟乙基)三氟磷酸鹽、α-萘基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物、3-甲基-2-丁烯基二甲基鋶三(三氟甲磺醯基)甲基化物、肉桂基二甲基鋶三(三氟甲磺醯基)甲基化物、3-甲基-2-丁烯基四亞甲基鋶三(三氟甲磺醯基)甲基化物、肉桂基四亞甲基鋶三(三氟甲磺醯基)甲基化物而成的接著劑組成物,保存穩定性與低溫快速硬化性更優異。 In particular, it contains α-naphthylmethyl-4-hydroxyphenylmethylsulfonium tris(perfluoroethyl)trifluorophosphate, 3-methyl-2-butenyldimethylsulfonium tris(perfluoroethyl) Trifluorophosphate, cinnamyl dimethyl sulfonium tris(perfluoroethyl)trifluorophosphate, 3-methyl-2-butenyltetramethylene sulfonium tris(perfluoroethyl)trifluorophosphate , cinnamyltetramethylenesulfonium tris(perfluoroethyl)trifluorophosphate, α-naphthylmethyl-4-hydroxyphenylmethylsulfonium tris(trifluoromethanesulfonyl)methide, 3- Methyl-2-butenyl dimethyl sulfonium tris(trifluoromethanesulfonyl) methide, cinnamyl dimethyl sulfonium tris(trifluoromethanesulfonyl) methide, 3-methyl-2 An adhesive composition of butenyltetramethylenesulfonium tris(trifluoromethanesulfonyl)methide and cinnamyltetramethylenesulfonium tris(trifluoromethanesulfonyl)methide It is more excellent in stability and rapid hardening at low temperatures.
就含有(A)成分而成的接著劑組成物的保存穩定性的觀點而言,作為(A)成分,較佳為在對(A)成分與縮水甘油醚型環氧化合物YL980(日本環氧樹脂(Japan Epoxy Resins)股份有限公司製品名、雙酚A型環氧樹脂)的混合物的示差掃描熱量測定中給出發熱峰值為40℃~150℃者。特別是給出發熱峰值為70℃~130℃者更佳。 From the viewpoint of the storage stability of the adhesive composition containing the component (A), the component (A) is preferably a component (A) and a glycidyl ether epoxy compound YL980 (Japanese epoxy). The differential scanning calorimetry of the mixture of resin (Japan Epoxy Resins Co., Ltd. product name, bisphenol A type epoxy resin) gives a peak of heat generation of 40 ° C to 150 ° C. In particular, it is better to give a peak of heat generation of 70 ° C ~ 130 ° C.
本實施形態的接著劑組成物中的(A)成分的含有比例,以(B)成分的總量基準計,較佳為0.5質量%~50質量%,更佳為設為2質量%~25質量%。若(A)成分的含有比例為0.5質量 %以上,則有獲得更充分的硬化的傾向,若為50質量%以下,則有接著力進一步提高的傾向。 The content ratio of the component (A) in the adhesive composition of the present embodiment is preferably 0.5% by mass to 50% by mass, and more preferably 2% by mass to 25% based on the total amount of the component (B). quality%. If the content of the component (A) is 0.5 mass When it is 50% by mass or more, the adhesive strength tends to be further improved.
作為(B)成分,可列舉:環氧化合物、氧雜環丁烷化合物、乙烯醚化合物等,作為環氧化合物,可例示:縮水甘油醚型環氧化合物、脂環式環氧化合物。 Examples of the component (B) include an epoxy compound, an oxetane compound, and a vinyl ether compound. Examples of the epoxy compound include a glycidyl ether epoxy compound and an alicyclic epoxy compound.
作為縮水甘油醚型環氧化合物,只要為在分子中具有縮水甘油醚基的化合物、且在硬化劑的存在下或不存在下藉由活性光線的照射或加熱而硬化者即可。其中,在1分子中具有2個以上環氧基者,進行硬化時的交聯密度變高,因此較佳。作為縮水甘油醚型環氧化合物,若為具有縮水甘油醚基的化合物,則並無特別限制,可使用公知者。更具體而言,可列舉:由表氯醇與雙酚A或雙酚F等衍生的雙酚型環氧樹脂及具有將這些雙酚型環氧樹脂的芳香族結構進行氫化而得的脂環結構的縮水甘油醚型環氧化合物,甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂等酚醛清漆型縮水甘油醚化合物,縮水甘油胺系環氧化合物,縮水甘油酯系環氧化合物,聯苯二縮水甘油醚,異三聚氰酸三縮水甘油酯,聚甲基丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯,可與其共聚合的乙烯系單體的共聚物等。這些可單獨使用,亦可組合2種以上而使用。 The glycidyl ether type epoxy compound may be a compound which has a glycidyl ether group in the molecule and which is hardened by irradiation or heating of active rays in the presence or absence of a curing agent. Among them, those having two or more epoxy groups in one molecule are preferred because the crosslinking density at the time of curing is increased. The glycidyl ether type epoxy compound is not particularly limited as long as it is a compound having a glycidyl ether group, and a known one can be used. More specifically, a bisphenol type epoxy resin derived from epichlorohydrin, bisphenol A or bisphenol F, and an alicyclic ring obtained by hydrogenating an aromatic structure of these bisphenol type epoxy resins may be mentioned. Structure of glycidyl ether type epoxy compound, cresol novolak type epoxy resin, phenol novolak type epoxy resin and other novolac type glycidyl ether compounds, glycidylamine epoxy compound, glycidyl ester epoxy compound , biphenyl diglycidyl ether, triglycidyl isocyanurate, polyglycidyl methacrylate or glycidyl methacrylate, a copolymer of a vinyl monomer copolymerizable therewith, and the like. These may be used alone or in combination of two or more.
作為脂環式環氧化合物,只要為在分子中具有包含構成環狀烴骨架的碳原子中的二個與氧原子的環氧基的化合物、且在硬化劑的存在下或不存在下藉由活性光線的照射或加熱而硬化者 即可。其中,在1分子中具有2個以上環氧基者,進行硬化時的交聯密度變高,因此較佳。作為脂環式環氧化合物,若為具有脂環式環氧基的化合物,則並無特別限制,可使用公知者。例如可列舉:將含有環己烯環的化合物氧化而得的含有環氧環己烷(cyclohexene oxide)的化合物、及將含有環戊烯環的化合物氧化而得的含有環氧環戊烷的化合物。更具體而言,可列舉:2-(3,4-環氧環己基-5,5-螺-3,4-環氧)環己烷-間二噁烷、3,4-環氧-1-甲基己烷甲酸3,4-環氧-1-甲基環己酯、3,4-環氧-3-甲基環己烷甲酸3,4-環氧-3-甲基環己基甲酯、3,4-環氧-5-甲基環己烷甲酸3,4-環氧-5-甲基環己基甲酯、3,4-環氧-6-甲基環己基甲酸酯、3,4-環氧環己烷甲酸3,4-環氧環己基甲酯、6-甲基-3,4-環氧環己烷甲酸6-甲基-3,4-環氧環己基甲酯、伸乙基二(3,4-環氧環己烷甲酸酯)、二環戊二烯二環氧化物、己二酸雙(3,4-環氧環己基甲基)酯、亞甲基雙(3,4-環氧環己烷)等。這些可單獨使用,亦可組合2種以上而使用。 The alicyclic epoxy compound is a compound having an epoxy group containing two of the carbon atoms constituting the cyclic hydrocarbon skeleton in the molecule and in the presence or absence of the hardener. Hardened by irradiation or heating of active light Just fine. Among them, those having two or more epoxy groups in one molecule are preferred because the crosslinking density at the time of curing is increased. The alicyclic epoxy compound is not particularly limited as long as it is a compound having an alicyclic epoxy group, and a known one can be used. For example, a cyclohexene oxide-containing compound obtained by oxidizing a cyclohexene ring-containing compound and an epoxycyclopentane-containing compound obtained by oxidizing a cyclopentene ring-containing compound may be mentioned. . More specifically, 2-(3,4-epoxycyclohexyl-5,5-spiro-3,4-epoxy)cyclohexane-m-dioxane, 3,4-epoxy-1 -3,4-epoxy-1-methylcyclohexyl methyl hexanecarboxylate, 3,4-epoxy-3-methylcyclohexanecarboxylic acid 3,4-epoxy-3-methylcyclohexyl Ester, 3,4-epoxy-5-methylcyclohexanecarboxylic acid 3,4-epoxy-5-methylcyclohexylmethyl ester, 3,4-epoxy-6-methylcyclohexylformate, 3,4-epoxycyclohexanemethyl 3,4-epoxycyclohexanecarboxylate, 6-methyl-3,4-epoxycyclohexanecarboxylic acid 6-methyl-3,4-epoxycyclohexyl Ester, ethyl bis(3,4-epoxycyclohexanecarboxylate), dicyclopentadiene diepoxide, bis(3,4-epoxycyclohexylmethyl) adipate, sub Methyl bis(3,4-epoxycyclohexane) and the like. These may be used alone or in combination of two or more.
作為氧雜環丁烷化合物,只要為分子中具有氧雜環丁基的氧雜環丁烷化合物、且在硬化劑的存在下或不存在下藉由活性光線的照射或加熱而硬化者即可。其中,具有2個以上氧雜環丁烷環的化合物,進行硬化時的交聯密度變高,因此較佳。而且,在分子中具有2個~6個氧雜環丁烷環、且具有1個~6個羥基的脂肪族系或脂環系化合物,就硬化性優異的觀點而言較佳。 The oxetane compound can be cured by irradiation or heating with active rays in the presence or absence of a curing agent as long as it is an oxetane compound having an oxetanyl group in the molecule. . Among them, a compound having two or more oxetane rings is preferred because it has a high crosslinking density at the time of curing. Further, an aliphatic or alicyclic compound having two to six oxetane rings in the molecule and having one to six hydroxyl groups is preferred from the viewpoint of excellent curability.
作為氧雜環丁烷化合物,可列舉:下述通式(XII)所示的化合物。 The oxetane compound is a compound represented by the following formula (XII).
式中,R9表示氫原子、氟原子或1價烴基,R10表示氫原子、n價脂肪族烴基或n價芳香族烴基,n表示1~6的整數。其中,在R10為氫原子時,n為1。在n為2以上的整數時,與R10鍵結的多個氧原子可彼此與R10的同一碳原子鍵結,亦可與R10的不同的碳原子鍵結。 In the formula, R 9 represents a hydrogen atom, a fluorine atom or a monovalent hydrocarbon group, R 10 represents a hydrogen atom, an n-valent aliphatic hydrocarbon group or an n-valent aromatic hydrocarbon group, and n represents an integer of 1 to 6. Here, when R 10 is a hydrogen atom, n is 1. When n is an integer of 2 or more, and more oxygen atoms R 10 may be bonded to each other with the same carbon atom bonded to R 10, and R may be bonded to different carbon atoms of 10.
作為氧雜環丁烷化合物,更具體而言,可列舉:1,4-二[(3-氧雜環丁基-正丁氧基)甲基]苯、4,4'-雙[(3-氧雜環丁基-正丁氧基)甲基]聯苯、3-乙基-3{[(3-乙基氧雜環丁烷-3-基)甲氧基]甲基}氧雜環丁烷、3-乙基-3-羥基甲基氧雜環丁烷、2-乙基己基氧雜環丁烷等。 More specifically, as the oxetane compound, 1,4-bis[(3-oxetanyl-n-butoxy)methyl]benzene, 4,4'-bis[(3) -oxetanyl-n-butoxy)methyl]biphenyl, 3-ethyl-3{[(3-ethyloxetan-3-yl)methoxy]methyl}oxa Cyclobutane, 3-ethyl-3-hydroxymethyloxetane, 2-ethylhexyloxybutane, and the like.
作為乙烯醚化合物,只要為在分子中具有乙烯醚基的化合物、且在硬化劑的存在下或不存在下藉由活性光線的照射或加熱而硬化者即可。其中,在1分子中具有2個以上乙烯醚基者,進行硬化時的交聯密度變高,因此較佳。 The vinyl ether compound may be a compound which has a vinyl ether group in its molecule and which is hardened by irradiation or heating of active light in the presence or absence of a curing agent. Among them, those having two or more vinyl ether groups in one molecule are preferred because the crosslinking density at the time of curing is increased.
作為乙烯醚化合物,可列舉:下述通式(XIII)所示的化合物。 The vinyl ether compound is a compound represented by the following formula (XIII).
式中,R11表示m價脂肪族烴基或m價芳香族烴基,m表示1~4的整數。在m為2以上的整數時,與R11鍵結的多個氧原子可彼此與R11的同一碳原子鍵結,亦可與R11的不同的碳原子鍵結。 In the formula, R 11 represents an m-valent aliphatic hydrocarbon group or an m-valent aromatic hydrocarbon group, and m represents an integer of 1 to 4. When m is an integer of 2 or more, and more oxygen atoms R 11 may be bonded to each other with the same carbon atom bonded to R 11, and R 11 is also different carbon atoms bonded.
作為乙烯醚化合物,更具體而言,可列舉:1,4-丁二醇二乙烯醚、環己烷二甲醇二乙烯醚、二乙二醇二乙烯醚、三乙二醇二乙烯醚等。 More specifically, examples of the vinyl ether compound include 1,4-butanediol divinyl ether, cyclohexane dimethanol divinyl ether, diethylene glycol divinyl ether, and triethylene glycol divinyl ether.
(B)成分的陽離子聚合性取代基當量較佳為43~1000,更佳為50~800,尤佳為73~600。若陽離子聚合性取代基當量為43~1000,則有在後述的電極的連接時,接著強度進一步提高傾向。另外,所謂陽離子聚合性取代基當量,是指將所含有的陽離子聚合性物質的一分子的平均分子量除以陽離子聚合性物質的一分子中的陽離子聚合性取代基數而得的值、即每單位陽離子聚合性取代基的平均分子量。 The cationically polymerizable substituent equivalent of the component (B) is preferably from 43 to 1,000, more preferably from 50 to 800, still more preferably from 73 to 600. When the cationically polymerizable substituent equivalent is from 43 to 1,000, the strength tends to increase further when the electrode is connected later. In addition, the cationically polymerizable substituent equivalent is a value obtained by dividing the average molecular weight of one molecule of the cationically polymerizable substance by the number of cationically polymerizable substituents in one molecule of the cationically polymerizable substance, that is, per unit. The average molecular weight of the cationically polymerizable substituent.
作為(B)成分,就防腐蝕的觀點而言,較佳為使用將雜質離子(Na+、Cl-等)及水解性氯等的含量降低至300ppm以下的高純度品。 As the component (B), from the viewpoint of corrosion prevention, it is preferred to use a high-purity product in which the content of impurity ions (Na + , Cl - , etc.) and hydrolyzable chlorine is reduced to 300 ppm or less.
本實施形態的接著劑組成物中的(B)成分的含有比例, 以接著劑組成物的總量基準計,較佳為10質量%~90質量%,更佳為25質量%~75質量%。若(B)成分的含有比例為10質量%以上,則有製成硬化物時的物性(彈性模數等)進一步提高的傾向,若為90質量%以下,則有硬化收縮小、且接著力進一步提高的傾向。 The content ratio of the component (B) in the adhesive composition of the present embodiment, It is preferably 10% by mass to 90% by mass, and more preferably 25% by mass to 75% by mass based on the total amount of the adhesive composition. When the content of the component (B) is 10% by mass or more, the physical properties (elastic modulus, etc.) when the cured product is formed tend to be further improved. When the content is 90% by mass or less, the curing shrinkage is small and the adhesive force is small. The tendency to further improve.
本實施形態的接著劑組成物中,(B)成分可單獨使用,亦可組合2種以上而使用。 In the adhesive composition of the present embodiment, the component (B) may be used singly or in combination of two or more.
本實施形態的接著劑組成物進一步含有(C)導電粒子。作為導電粒子,例如可列舉:Au、Ag、Ni、Cu、焊料等金屬粒子及碳。另外,亦可為將非導電性的玻璃、陶瓷、塑膠等作為核,並在該核上被覆上述金屬、金屬粒子或碳者。在導電粒子為將塑膠作為核、並在該核上被覆上述金屬、金屬粒子或碳而成者及熱熔融金屬粒子時,藉由加熱加壓而變形,而在連接時與電極的接觸面積增加,並且連接可靠性提高,因此較佳。另外,將這些導電粒子的表面進一步藉由高分子樹脂等被覆而成的微粒子,在增加導電粒子的調配量時,可抑制因粒子彼此的接觸引起的短路,並提高電極電路間的絕緣性。因此,可適當單獨使用將導電粒子的表面藉由高分子樹脂等被覆而成的微粒子,或與導電粒子混合而使用。 The adhesive composition of the present embodiment further contains (C) conductive particles. Examples of the conductive particles include metal particles such as Au, Ag, Ni, Cu, and solder, and carbon. Further, a non-conductive glass, ceramic, plastic or the like may be used as a core, and the metal, metal particles or carbon may be coated on the core. When the conductive particles are made of a metal as a core and coated with the metal, the metal particles or the carbon, and the hot-melt metal particles, the conductive particles are deformed by heating and pressing, and the contact area with the electrode is increased at the time of connection. And the connection reliability is improved, so it is preferable. In addition, when the surface of the conductive particles is further coated with a polymer resin or the like, when the amount of the conductive particles is increased, short-circuiting due to contact between the particles can be suppressed, and insulation between the electrode circuits can be improved. Therefore, the fine particles obtained by coating the surface of the conductive particles with a polymer resin or the like may be used singly or in combination with the conductive particles.
該導電粒子的平均粒徑可藉由掃描型電子顯微鏡(Scanning Electron Microscope,SEM)觀察而求出。就分散性及導電性變得良好的觀點而言,導電粒子的平均粒徑較佳為1μm~ 18μm。本實施形態的接著劑組成物中的導電粒子的含有比例並無特別限制,相對於接著劑組成物100體積%,較佳為0.1體積%~30體積%,更佳為0.1體積%~10體積%。若導電粒子的含有比例為0.1體積%以上,則有導電性進一步提高的傾向,若為30體積%以下,則可進一步防止電路的短路。另外,「體積%」是根據硬化前的各成分在23℃時的體積而確定,各成分的體積亦可利用比重將質量進行轉換而算出。另外,各成分的體積亦可在量筒等中加入適當的溶劑(水、醇等)而成者中,投入上述成分根據所增加的體積量而求出。另外,所謂適當的溶劑,是指不將上述成分溶解或膨潤、而充分潤濕者。 The average particle diameter of the conductive particles can be determined by observation with a scanning electron microscope (SEM). The average particle diameter of the conductive particles is preferably 1 μm from the viewpoint that the dispersibility and the conductivity become good. 18 μm. The content ratio of the conductive particles in the adhesive composition of the present embodiment is not particularly limited, and is preferably 0.1% by volume to 30% by volume, and more preferably 0.1% by volume to 10% by volume based on 100% by volume of the adhesive composition. %. When the content ratio of the conductive particles is 0.1% by volume or more, the conductivity tends to be further improved, and if it is 30% by volume or less, the short circuit of the circuit can be further prevented. In addition, "vol%" is determined based on the volume of each component before hardening at 23 ° C, and the volume of each component can also be calculated by converting the mass by specific gravity. Further, the volume of each component may be obtained by adding an appropriate solvent (water, alcohol, or the like) to a measuring cylinder or the like, and the above-mentioned components are obtained in accordance with the increased volume. Further, the term "appropriate solvent" means that the above components are not sufficiently dissolved or swollen, and are sufficiently wetted.
為了防止被黏接體的腐蝕,本實施形態的接著劑組成物可添加、混合包含金屬氫氧化物或金屬氧化物的防腐蝕劑。作為防腐蝕劑,更具體而言,較佳為選自由氫氧化鋁、氫氧化鎂、氫氧化鈣、氧化矽、氧化鋁、氧化鎂、氧化銻、氧化錫、氧化鈦、氧化錳及氧化鋯所組成的組群的至少一種以上。在防腐蝕劑為粒子狀時,就在接著劑組成物中的分散、在被黏接體上的高接著化及被黏接體的防腐蝕能力的觀點而言,其粒徑較佳為10μm以下。 In order to prevent corrosion of the adherend, the adhesive composition of the present embodiment may be added or mixed with an anticorrosive agent containing a metal hydroxide or a metal oxide. As the anticorrosive agent, more specifically, it is preferably selected from the group consisting of aluminum hydroxide, magnesium hydroxide, calcium hydroxide, cerium oxide, aluminum oxide, magnesium oxide, cerium oxide, tin oxide, titanium oxide, manganese oxide, and zirconium oxide. At least one or more of the group consisting of. When the anticorrosive agent is in the form of particles, the particle size is preferably 10 μm or less from the viewpoint of dispersion in the adhesive composition, high adhesion to the adherend, and corrosion resistance of the adherend. .
本實施形態的接著劑組成物中的防腐蝕劑的含有比例,以(A)成分的總量基準計,較佳為0.1質量%~60質量%,更佳為1質量%~30質量%。若防腐蝕劑的含有比例為0.1質量%以上,則可充分地發揮出防腐蝕效果,若為60質量%以下,則有分散性提高、且接著劑組成物的連接可靠性進一步提高的傾向。 The content ratio of the anticorrosive agent in the adhesive composition of the present embodiment is preferably 0.1% by mass to 60% by mass, and more preferably 1% by mass to 30% by mass based on the total amount of the component (A). When the content ratio of the anticorrosive agent is 0.1% by mass or more, the anticorrosive effect can be sufficiently exhibited. When the content is 60% by mass or less, the dispersibility is improved and the connection reliability of the adhesive composition tends to be further improved.
本實施形態的接著劑組成物可進一步含有:在1分子中具有2個以上醚鍵的鏈狀醚化合物或環狀醚化合物。特別是在含有脂環式環氧化合物作為(B)成分時,藉由進一步含有鏈狀或環狀醚化合物,而可更容易且更可靠地控制脂環式環氧化合物的硬化行為。 The adhesive composition of the present embodiment may further contain a chain ether compound or a cyclic ether compound having two or more ether bonds in one molecule. In particular, when the alicyclic epoxy compound is contained as the component (B), the hardening behavior of the alicyclic epoxy compound can be controlled more easily and more reliably by further containing a chain or cyclic ether compound.
作為鏈狀或環狀醚化合物,若為在1分子中具有2個以上醚鍵者,則並無特別限制,可使用公知者。作為鏈狀醚化合物,可列舉:三乙二醇、四乙二醇等聚乙二醇類;藉由醚鍵或酯鍵將聚乙二醇類的末端羥基進行官能化的衍生物;環氧乙烷、環氧丙烷、環氧環己烷等單官能環氧化合物的聚合物;多官能環氧化合物的聚合物;單官能或多官能氧雜環丁烷化合物的聚合物;單官能或多官能四氫呋喃類的聚合物等。另外,作為環狀醚化合物,可列舉:12-冠-4-醚、14-冠-4-醚、15-冠-5-醚、18-冠-6-醚、21-冠-7-醚、24-冠-8-醚、30-冠-7-醚、苯并-18-冠-6-醚、二苯并-18-冠-6-醚、三苯并-18-冠-6-醚、聚乙二醇類的環化物、環氧化合物的聚合物的環化物等。這些可單獨使用,亦可組合2種以上而使用。 The chain or cyclic ether compound is not particularly limited as long as it has two or more ether bonds in one molecule, and a known one can be used. Examples of the chain ether compound include polyethylene glycols such as triethylene glycol and tetraethylene glycol; and derivatives in which a terminal hydroxyl group of a polyethylene glycol is functionalized by an ether bond or an ester bond; a polymer of a monofunctional epoxy compound such as ethane, propylene oxide or cyclohexene oxide; a polymer of a polyfunctional epoxy compound; a polymer of a monofunctional or polyfunctional oxetane compound; monofunctional or poly A functional tetrahydrofuran-based polymer or the like. Further, examples of the cyclic ether compound include 12-crown-4-ether, 14-crown-4-ether, 15-crown-5-ether, 18-crown-6-ether, and 21-crown-7-ether. , 24-crown-8-ether, 30-crown-7-ether, benzo-18-crown-6-ether, dibenzo-18-crown-6-ether, tribenzo-18-crown-6- An ether, a diol of a polyethylene glycol, a cyclized product of a polymer of an epoxy compound, or the like. These may be used alone or in combination of two or more.
上述中,就反應調節能力的觀點而言,較佳為環狀醚化合物,更佳為12-冠-4-醚、14-冠-4-醚、15-冠-5-醚、18-冠-6-醚、21-冠-7-醚、24-冠-8-醚、30-冠-7-醚、苯并-18-冠-6-醚、二苯并-18-冠-6-醚、三苯并-18-冠-6-醚。 Among the above, from the viewpoint of reaction accommodation ability, a cyclic ether compound is preferred, and more preferred are 12-crown-4-ether, 14-crown-4-ether, 15-crown-5-ether, and 18-crown. -6-ether, 21-crown-7-ether, 24-crown-8-ether, 30-crown-7-ether, benzo-18-crown-6-ether, dibenzo-18-crown-6- Ether, triphenyl-18-crown-6-ether.
相對於(A)成分,本實施形態的接著劑組成物中的鏈 狀或環狀醚化合物的含量,較佳為設為0.005莫耳%~10莫耳%,更佳為設為0.01莫耳%~5莫耳%。若鏈狀或環狀醚化合物的含量為0.005莫耳%以上,則接著強度進一步提高,若為20莫耳%以下,則有促進硬化、且交聯密度進一步提高的傾向。 The chain in the adhesive composition of the present embodiment with respect to the component (A) The content of the cyclic or cyclic ether compound is preferably from 0.005 mol% to 10 mol%, more preferably from 0.01 mol% to 5 mol%. When the content of the chain-like or cyclic ether compound is 0.005 mol% or more, the subsequent strength is further improved, and when it is 20 mol% or less, the curing tends to be promoted and the crosslinking density tends to be further improved.
若為不損害本發明的效果的範圍內,則本實施形態的接著劑組成物亦可含有公知的各種添加劑,例如:無機填充劑;強化劑;著色劑;穩定劑(熱穩定劑、耐候性改良劑等);增量劑;黏度調節劑;以萜烯苯酚共聚物、萜烯樹脂、松香衍生物及脂環族系烴樹脂等為代表的黏著賦予劑;阻燃劑;紫外線吸收劑;抗氧化劑;抗變色劑;抗菌劑;防黴劑;抗老化劑;抗靜電劑;塑化劑;潤滑劑;發泡劑;脫模劑等。 The adhesive composition of the present embodiment may contain various known additives such as an inorganic filler, a reinforcing agent, a coloring agent, a stabilizer (heat stabilizer, weather resistance), insofar as the effect of the present invention is not impaired. Modifier, etc.; extender; viscosity modifier; adhesion imparting agent represented by terpene phenol copolymer, terpene resin, rosin derivative and alicyclic hydrocarbon resin; flame retardant; ultraviolet absorber; Antioxidant; anti-tarnishing agent; antibacterial agent; anti-fungal agent; anti-aging agent; antistatic agent; plasticizer; lubricant; foaming agent;
作為上述著色劑,可列舉:直接染料、酸性染料、鹼性染料、金屬錯鹽染料等染料;碳黑、雲母等無機顏料;偶合偶氮系、縮合偶氮系、蒽醌系、硫靛藍系、二噁酮系及酞菁系等有機顏料等。另外,作為上述穩定劑,可列舉:受阻酚系、肼系、磷系、二苯甲酮系、苯并三唑系及草酸醯替苯胺(oxalic acid anilide)系等化合物。作為上述無機填充劑,可列舉:玻璃纖維;石棉纖維;碳纖維;二氧化矽纖維;氧化鋁(alumina)纖維;氧化鋯(zirconia)纖維;氮化硼纖維;氮化矽纖維;鹼性硫酸鎂纖維;硼纖維;不鏽鋼纖維;鋁、鈦、銅、黃銅及鎂等無機質及包含這些的金屬纖維;銅、鐵、鎳、鋅、錫、鉛、不鏽鋼、鋁、金及銀等金屬粉末;木粉;矽酸鋁;滑石;黏土;碳酸鹽;硫酸鹽;磷 酸鹽;硼酸鹽;硼矽酸鹽;鋁矽酸鹽;鈦酸鹽;鹼性硫酸鹽及鹼性碳酸鹽等鹼性鹽;玻璃中空球及玻璃碎片(glass flake)等玻璃材料;碳化矽;氮化鋁;富鋁紅柱石(mullite);堇青石(cordierite)等。 Examples of the coloring agent include dyes such as direct dyes, acid dyes, basic dyes, and metal-salted dyes; inorganic pigments such as carbon black and mica; and azo-based, condensed azo, lanthanide, and thio-blue Organic pigments such as dioxone and phthalocyanine. Further, examples of the stabilizer include compounds such as hindered phenol, lanthanide, phosphorus, benzophenone, benzotriazole, and oxalic acid anilide. Examples of the inorganic filler include glass fiber; asbestos fiber; carbon fiber; cerium oxide fiber; alumina fiber; zirconia fiber; boron nitride fiber; cerium nitride fiber; Fiber; boron fiber; stainless steel fiber; inorganic materials such as aluminum, titanium, copper, brass and magnesium, and metal fibers containing the same; metal powders such as copper, iron, nickel, zinc, tin, lead, stainless steel, aluminum, gold and silver; Wood powder; aluminum citrate; talc; clay; carbonate; sulfate; Acid salt; borate; borosilicate; aluminosilicate; titanate; basic salt such as alkali sulfate and alkali carbonate; glass material such as glass hollow sphere and glass flake; Aluminum nitride; mullite; cordierite, etc.
為了增黏化及膜化,本實施形態的接著劑組成物可適當含有各種聚合物。作為所含有的聚合物,若為不會大大阻礙(B)成分的硬化者,則並無限制,可使用公知的聚合物。作為此種聚合物,可使用:苯氧樹脂類、聚甲基丙烯酸酯類、聚丙烯酸酯類、聚酯類、聚乙烯縮丁醛類、SBS(苯乙烯丁二烯苯乙烯(Styrene-Butadiene-Styrene)嵌段共聚物)及其環氧改質體、以及SEBS(苯乙烯乙烯丁烯苯乙烯(Styrene-Ethylene-Butylene-Styrene)嵌段共聚物)及其改質體等。這些聚合物可單獨使用,亦可組合2種以上而使用。而且,這些聚合物中可含有矽氧烷鍵或氟取代基。這些聚合物若為所混合的樹脂彼此完全相溶、或產生微相分離而產生白濁的狀態,則可較佳地用作接著劑組成物。特別是在以膜化為目的時,較佳為含有苯氧樹脂類、聚乙烯縮丁醛類等膜形成性聚合物。 In order to increase the viscosity and film formation, the adhesive composition of the present embodiment may suitably contain various polymers. The polymer to be contained is not limited as long as it does not significantly inhibit the curing of the component (B), and a known polymer can be used. As such a polymer, phenoxy resin, polymethacrylate, polyacrylate, polyester, polyvinyl butyral, SBS (styrene butadiene styrene (Styrene-Butadiene) can be used. -Styrene) block copolymers and their epoxy modified bodies, and SEBS (Styrene-Ethylene-Butylene-Styrene block copolymer) and modified bodies thereof. These polymers may be used singly or in combination of two or more. Moreover, these polymers may contain a decane or a fluorine substituent. These polymers are preferably used as an adhesive composition if the mixed resins are completely compatible with each other or are subjected to microphase separation to cause white turbidity. In particular, when it is intended for film formation, it is preferred to contain a film-forming polymer such as a phenoxy resin or a polyvinyl butyral.
若上述聚合物的分子量大,則容易獲得膜形成性,且可將對接著劑組成物的流動性造成影響的熔融黏度設定在寬範圍。上述聚合物的重量平均分子量並無特別限制,較佳為5000~150000,更佳為10000~80000。在重量平均分子量為5000以上時,有膜形成性更優異的傾向,在重量平均分子量為150000以下 時,有與其他成分的相溶性變得更佳的傾向。此處所謂重量平均分子量,是指根據下述所示的條件,藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC),使用藉由標準聚苯乙烯的校準曲線而測定的值。 When the molecular weight of the above polymer is large, film formability is easily obtained, and the melt viscosity which affects the fluidity of the adhesive composition can be set in a wide range. The weight average molecular weight of the above polymer is not particularly limited, and is preferably from 5,000 to 150,000, more preferably from 10,000 to 80,000. When the weight average molecular weight is 5,000 or more, the film formability tends to be more excellent, and the weight average molecular weight is 150,000 or less. At the time, compatibility with other components tends to be better. Here, the weight average molecular weight means a value measured by a gel permeation chromatography (GPC) using a calibration curve of standard polystyrene according to the conditions shown below.
(測定條件) (measurement conditions)
裝置:東曹(Tosoh)股份有限公司製造的GPC-8020 Device: GPC-8020 manufactured by Tosoh Co., Ltd.
檢測器:東曹股份有限公司製造的RI-8020 Detector: RI-8020 manufactured by Tosoh Corporation
管柱:日立化成工業股份有限公司製造的Gelpack GL-A-160-S+GL-A150 Pipe column: Gelpack GL-A-160-S+GL-A150 manufactured by Hitachi Chemical Co., Ltd.
試樣濃度:120mg/3mL Sample concentration: 120mg/3mL
溶劑:四氫呋喃 Solvent: tetrahydrofuran
注入量:60μL Injection volume: 60μL
壓力:2.9MPa(30kgf/cm2) Pressure: 2.9MPa (30kgf/cm 2 )
流量:1.00mL/min Flow rate: 1.00mL/min
相對於(B)成分100質量份,本實施形態的接著劑組成物中的上述聚合物的含量,較佳為20質量份~320質量份,更佳為50質量份~150質量份。若上述聚合物的含有比例為20質量份~320質量份,則有接著劑組成物的流動性及接著性進一步提高的傾向。 The content of the polymer in the adhesive composition of the present embodiment is preferably 20 parts by mass to 320 parts by mass, and more preferably 50 parts by mass to 150 parts by mass, per 100 parts by mass of the component (B). When the content ratio of the above polymer is from 20 parts by mass to 320 parts by mass, the fluidity and adhesion of the adhesive composition tend to be further improved.
本實施形態的接著劑組成物在常溫下為液狀時,能以膏狀使用。本實施形態的接著劑組成物在室溫下為固體時,除了進行加熱而使用外,亦可使用溶劑進行膏化。作為可使用的溶劑, 若為與接著劑組成物及添加劑無反應性,且表現出充分的溶解性者,則並無特別限制,較佳為在常壓下的沸點為50℃~150℃者。沸點為50℃以上的溶劑,即便在常溫下放置亦難以揮發,在開放體系中使用時的限制少。另外,沸點為150℃以下的溶劑,有容易使溶劑揮發,接著後的連接可靠性進一步提高的傾向。 When the adhesive composition of the present embodiment is liquid at normal temperature, it can be used in the form of a paste. When the adhesive composition of the present embodiment is a solid at room temperature, it may be paste-formed using a solvent in addition to heating. As a solvent that can be used, There is no particular limitation on the case of being non-reactive with the adhesive composition and the additive, and exhibiting sufficient solubility, and it is preferred that the boiling point at normal pressure is from 50 ° C to 150 ° C. A solvent having a boiling point of 50 ° C or higher is less likely to volatilize even when left at room temperature, and has less restriction when used in an open system. Further, a solvent having a boiling point of 150 ° C or less tends to volatilize the solvent, and the subsequent connection reliability tends to be further improved.
本實施形態的接著劑組成物可藉由加熱而硬化。加熱溫度較佳為40℃~180℃、更佳為50℃~150℃,加熱時間較佳為0.1秒鐘~10小時、更佳為1秒鐘~1小時。若加熱溫度為40℃以上,則有硬化速度進一步提高的傾向,若為180℃以下,則有抑制不理想的副反應、且連接可靠性進一步提高的傾向。另外,若加熱時間為0.1秒鐘以上,則有硬化反應容易進行的傾向,若為10小時以下,則有硬化物的生產性進一步提高,並且不理想的副反應難以進行,連接可靠性進一步提高的傾向。 The adhesive composition of the present embodiment can be cured by heating. The heating temperature is preferably from 40 ° C to 180 ° C, more preferably from 50 ° C to 150 ° C, and the heating time is preferably from 0.1 second to 10 hours, more preferably from 1 second to 1 hour. When the heating temperature is 40° C. or more, the curing rate tends to be further improved. When the temperature is 180° C. or lower, undesired side reactions are suppressed, and the connection reliability tends to be further improved. In addition, when the heating time is 0.1 second or longer, the curing reaction tends to proceed easily. When the heating time is 10 hours or shorter, the productivity of the cured product is further improved, and undesirable side reactions are difficult to be performed, and the connection reliability is further improved. Propensity.
本實施形態的接著劑組成物可併用加熱及加壓而使被黏接體接著。併用加熱及加壓而接著時的加熱溫度並無特別限制,較佳為50℃~190℃的溫度。壓力若為不對被黏接體造成損傷的範圍,則並無特別限制,在TCP及覆晶薄膜(Chip on Flex,COF)時,通常較佳為0.1MPa~30MPa。另外,在COG安裝時,較佳為10MPa~100MPa。這些加熱及加壓較佳為在0.5秒鐘~120秒鐘的範圍內進行。 In the adhesive composition of the present embodiment, the adherend can be subsequently joined by heating and pressurization. The heating temperature by heating and pressurization is not particularly limited, and is preferably 50 ° C to 190 ° C. The pressure is not particularly limited as long as it does not cause damage to the bonded body. In the case of TCP and chip on TFT (COF), it is usually preferably 0.1 MPa to 30 MPa. Further, when the COG is mounted, it is preferably 10 MPa to 100 MPa. These heating and pressurization are preferably carried out in the range of 0.5 second to 120 seconds.
本實施形態的接著劑組成物可用作熱膨脹係數不同的不同種類的被黏接體的接著劑,亦可形成為膜狀而使用。具體而 言,可用作:以銀膏及銀膜等為代表的將具有電路電極的電路構件間接著的電路連接用接著劑,以及以晶片尺寸封裝(Chip Size Package,CSP)用彈性體、CSP用底部填充(under fill)材料及引線覆晶(Lead On Chip,LOC)膠帶等為代表的將半導體元件與具有電路圖案的半導體元件搭載用指示構件接著的半導體元件連接用接著劑。 The adhesive composition of the present embodiment can be used as an adhesive for different types of adherends having different thermal expansion coefficients, and can be used in the form of a film. Specifically In other words, it can be used as an adhesive for connecting circuit elements between circuit members having circuit electrodes, such as silver paste and silver film, and for elastomers and CSPs for chip size packages (CSP). An underlayer for connecting a semiconductor element to a semiconductor element mounting instruction member having a circuit pattern, such as an underfill material and a lead on chip (LOC) tape.
[膜狀接著劑] [membrane adhesive]
圖1是表示膜狀接著劑的一個實施形態的示意剖面圖。圖1所示的膜狀接著劑1是包含接著劑成分5及導電粒子7、且將上述接著劑組成物形成為膜狀者。根據該膜狀接著劑1,操作容易,可容易地設置在被黏接體上,並可容易地進行連接作業。 Fig. 1 is a schematic cross-sectional view showing an embodiment of a film-like adhesive. The film-like adhesive 1 shown in FIG. 1 is a film containing the adhesive component 5 and the conductive particle 7, and the above-mentioned adhesive composition is formed into a film shape. According to the film-like adhesive 1, the operation is easy, and it can be easily provided on the adherend, and the joining operation can be easily performed.
另外,膜狀接著劑1亦可設為包含使用不同種類的接著劑組成物的2層以上的層的多層構成(未圖示)。在上述2層以上的層中,可將各層的Tg(玻璃轉移溫度)設為例如5℃以上的不同溫度者。 Further, the film-like adhesive 1 may be a multilayer structure (not shown) including two or more layers using different types of adhesive compositions. In the above two or more layers, the Tg (glass transition temperature) of each layer can be set to, for example, a different temperature of 5 ° C or higher.
膜狀接著劑1例如可藉由以下方式製作:使用塗敷裝置將在溶劑中溶解有接著劑組成物而成者塗佈於支撐體(聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)膜等)上,在接著劑組成物不硬化的溫度下熱風乾燥特定時間。另外,膜狀接著劑1的厚度例如可設為10μm~50μm。 The film-like adhesive 1 can be produced, for example, by applying a binder composition in a solvent to a support (polyethylene terephthalate (PET)) using a coating device. On the film or the like, it is dried by hot air at a temperature at which the adhesive composition is not hardened for a specific period of time. Further, the thickness of the film-like adhesive 1 can be, for example, 10 μm to 50 μm.
[連接結構體] [connection structure]
圖2是表示連接結構體的一個實施形態的示意剖面圖。如圖2 所示,本實施形態的連接結構體具備彼此對向的第一電路構件20及第二電路構件30,在第一電路構件20與第二電路構件30之間,設置將這些電路構件連接的電路連接構件10。第一電路構件20或第二電路構件30可包含無機材料。另外,與連接構件的被黏接面的至少一部分可包含無機材料。 Fig. 2 is a schematic cross-sectional view showing an embodiment of a connection structure. Figure 2 As shown in the figure, the connection structure of the present embodiment includes the first circuit member 20 and the second circuit member 30 that face each other, and a circuit that connects the circuit members is provided between the first circuit member 20 and the second circuit member 30. Connecting member 10. The first circuit member 20 or the second circuit member 30 may comprise an inorganic material. Further, at least a portion of the bonded surface of the connecting member may contain an inorganic material.
第一電路構件20具備:電路基板(第一電路基板)21、及形成於電路基板21的主面21a上的電路電極(第一電路電極)22。另外,在電路基板21的主面21a上,根據情況可形成絕緣層(未圖示)。 The first circuit member 20 includes a circuit board (first circuit board) 21 and a circuit electrode (first circuit electrode) 22 formed on the main surface 21 a of the circuit board 21 . Further, an insulating layer (not shown) may be formed on the main surface 21a of the circuit board 21 as the case may be.
另一方面,第二電路構件30具備:電路基板(第二電路基板)31、及形成於電路基板31的主面31a上的電路電極(第二電路電極)32。另外,在電路基板31的主面31a上,亦可根據情況形成絕緣層(未圖示)。 On the other hand, the second circuit member 30 includes a circuit board (second circuit board) 31 and a circuit electrode (second circuit electrode) 32 formed on the main surface 31a of the circuit board 31. Further, an insulating layer (not shown) may be formed on the main surface 31a of the circuit board 31 as the case may be.
作為第一電路構件20及第二電路構件30,若為形成有必須電性連接的電極者,則並無特別限制。具體而言,可列舉:可用於液晶顯示器的由氧化銦錫(Indium Tin Oxide,ITO)等形成電極的玻璃或塑膠基板、印刷配線板、陶瓷配線板、軟性配線板、半導體矽晶片等,這些根據需要可組合而使用。如此,在本實施形態中,可使用以印刷配線板或包含聚醯亞胺等有機物的材質為代表,如包含銅、鋁等金屬或ITO(Indium Tin Oxide)、氮化矽(SiNx)、二氧化矽(SiO2)等無機材料的材質般,具有各種各樣的表面狀態的電路構件。 The first circuit member 20 and the second circuit member 30 are not particularly limited as long as they are formed with electrodes that are required to be electrically connected. Specifically, a glass or plastic substrate, a printed wiring board, a ceramic wiring board, a flexible wiring board, a semiconductor germanium wafer, etc., which can be used for forming an electrode, such as an indium tin oxide (ITO), can be used for a liquid crystal display. It can be used in combination as needed. As described above, in the present embodiment, a material such as a printed wiring board or an organic material containing polyimide or the like may be used, and a metal such as copper or aluminum or ITO (Indium Tin Oxide) or tantalum nitride (SiN x ) may be used. A circuit member having various surface states like a material of an inorganic material such as cerium oxide (SiO 2 ).
電路連接構件10藉由上述接著劑組成物的硬化物而形成,含有絕緣性物質11及導電粒子7。導電粒子7不僅配置於對向的電路電極22與電路電極32之間,而且亦配置於主面21a與主面31a之間。在連接結構體中,電路電極22及電路電極32經由導電粒子7而電性連接。即,導電粒子7與電路電極22及電路電極32這兩者直接接觸。 The circuit connecting member 10 is formed of a cured product of the above-described adhesive composition, and contains an insulating material 11 and conductive particles 7. The conductive particles 7 are disposed not only between the opposing circuit electrode 22 and the circuit electrode 32 but also between the main surface 21a and the main surface 31a. In the connection structure, the circuit electrode 22 and the circuit electrode 32 are electrically connected via the conductive particles 7. That is, the conductive particles 7 are in direct contact with both the circuit electrode 22 and the circuit electrode 32.
在該連接結構體中,如上所述般,對向的電路電極22與電路電極32經由導電粒子7而電性連接。因此,可充分地降低電路電極22及電路電極32間的連接電阻。因此,可使電路電極22及電路電極32間的電流的流通順暢,並可充分地發揮出電路所具有的功能。 In the connection structure, as described above, the opposing circuit electrode 22 and the circuit electrode 32 are electrically connected via the conductive particles 7. Therefore, the connection resistance between the circuit electrode 22 and the circuit electrode 32 can be sufficiently reduced. Therefore, the flow of current between the circuit electrode 22 and the circuit electrode 32 can be made smooth, and the function of the circuit can be sufficiently exhibited.
[連接結構體的製造方法] [Manufacturing method of connection structure]
繼而,對上述連接結構體的製造方法進行說明。 Next, a method of manufacturing the above-described bonded structure will be described.
首先,準備上述第一電路構件20、與膜狀接著劑1(參照圖3中的(a))。 First, the first circuit member 20 and the film-like adhesive 1 are prepared (see (a) of FIG. 3).
膜狀接著劑1的厚度較佳為10μm~50μm。藉由將膜狀接著劑1的厚度設為10μm以上,而能可靠地填充電路電極22及電路電極32間的電路連接材料。另一方面,藉由將膜狀接著劑1的厚度設為50μm以下,而可進一步高度地防止電路電極22及電路電極32間的電路連接材料溢出。 The thickness of the film-like adhesive 1 is preferably from 10 μm to 50 μm. By setting the thickness of the film-like adhesive 1 to 10 μm or more, the circuit connecting material between the circuit electrode 22 and the circuit electrode 32 can be reliably filled. On the other hand, by setting the thickness of the film-like adhesive 1 to 50 μm or less, it is possible to further prevent the circuit connecting material between the circuit electrode 22 and the circuit electrode 32 from overflowing.
繼而,將膜狀接著劑1載置於第一電路構件20的形成有電路電極22的面上。另外,在膜狀接著劑1附著於支撐體(未 圖示)上時,將膜狀接著劑1側以面向第一電路構件20的方式載置於第一電路構件20上。此時,膜狀接著劑1為膜狀,而操作容易。因此,可使膜狀接著劑1容易介在於第一電路構件20與第二電路構件30之間,並可容易地進行第一電路構件20與第二電路構件30的連接作業。 Then, the film-like adhesive 1 is placed on the surface of the first circuit member 20 on which the circuit electrode 22 is formed. In addition, the film-like adhesive 1 is attached to the support (not In the case of the above, the film-like adhesive 1 side is placed on the first circuit member 20 so as to face the first circuit member 20. At this time, the film-like adhesive 1 is in the form of a film, and the handling is easy. Therefore, the film-like adhesive 1 can be easily interposed between the first circuit member 20 and the second circuit member 30, and the connection work of the first circuit member 20 and the second circuit member 30 can be easily performed.
繼而,將膜狀接著劑1朝著圖3中的(a)的箭頭A及箭頭B方向加壓,使膜狀接著劑1與第一電路構件20暫時連接(參照圖3中的(b))。此時,可一邊加熱一邊加壓。 Then, the film-like adhesive 1 is pressurized in the direction of the arrow A and the arrow B of (a) in FIG. 3 to temporarily connect the film-like adhesive 1 to the first circuit member 20 (refer to (b) in FIG. 3 ). At this time, it can be pressurized while heating.
繼而,如圖3中的(c)所示般,將第二電路構件30以使第二電路電極32面向第一電路構件20的方式(即,以第一電路電極22與第二電路電極32對向配置的狀態),載置於膜狀接著劑1上。另外,在膜狀接著劑1附著於支撐體(未圖示)上時,將支撐體剝離後將第二電路構件30載置於膜狀接著劑1上。 Then, as shown in (c) of FIG. 3, the second circuit member 30 is oriented such that the second circuit electrode 32 faces the first circuit member 20 (ie, the first circuit electrode 22 and the second circuit electrode 32). The state of the opposite arrangement is placed on the film-like adhesive 1. Further, when the film-like adhesive 1 is attached to a support (not shown), the second circuit member 30 is placed on the film-like adhesive 1 after the support is peeled off.
繼而,一邊加熱膜狀接著劑1,一邊朝著圖3中的(c)的箭頭A及箭頭B方向,經由第一電路構件20及第二電路構件30加壓。如此,將膜狀接著劑1進行硬化處理,並進行正式連接,而獲得如圖2所示的連接結構體。 Then, while the film-like adhesive 1 is heated, it is pressurized via the first circuit member 20 and the second circuit member 30 in the directions of the arrow A and the arrow B in (c) of FIG. 3 . In this manner, the film-like adhesive 1 was subjected to a hardening treatment and officially joined to obtain a bonded structure as shown in FIG. 2 .
若以如上述的方式製造連接結構體,則在所得的連接結構體中,可使導電粒子7與對向的電路電極22及電路電極32這兩者接觸,並可充分地降低電路電極22及電路電極32間的連接電阻。 When the connection structure is manufactured as described above, in the obtained connection structure, the conductive particles 7 can be brought into contact with both the opposing circuit electrode 22 and the circuit electrode 32, and the circuit electrode 22 can be sufficiently reduced. The connection resistance between the circuit electrodes 32.
另外,藉由膜狀接著劑1的加熱,而在充分地減小電路 電極22與電路電極32之間的距離的狀態下,接著劑成分5發生硬化而成為絕緣性物質11,並且第一電路構件20與第二電路構件30經由電路連接構件10而牢固地連接。即,在所得的連接結構體中,電路連接構件10包含含有上述接著劑組成物的電路連接材料的硬化物,因此電路連接構件10對於第一電路構件20或第二電路構件30的接著強度充分地提高,特別是在高溫高濕條件下接著強度充分地提高。另外,在連接結構體中,接著強度充分高的狀態可長期地持續。因此,所得的連接結構體可充分地防止電路電極22及電路電極32間的距離的經時的變化,電路電極22及電路電極32間的電氣特性的長期可靠性優異。 In addition, the circuit is sufficiently reduced by the heating of the film-like adhesive 1 In a state where the distance between the electrode 22 and the circuit electrode 32 is the same, the adhesive component 5 is cured to become the insulating material 11, and the first circuit member 20 and the second circuit member 30 are firmly connected via the circuit connecting member 10. That is, in the obtained connection structure, the circuit connecting member 10 includes the cured material of the circuit connecting material containing the above-described adhesive composition, and therefore the bonding strength of the circuit connecting member 10 to the first circuit member 20 or the second circuit member 30 is sufficient. The grounding is improved, especially under high temperature and high humidity conditions, and the strength is sufficiently increased. Further, in the joined structure, the state in which the strength is sufficiently high can be continued for a long period of time. Therefore, the obtained connection structure can sufficiently prevent the temporal change of the distance between the circuit electrode 22 and the circuit electrode 32, and the electrical reliability between the circuit electrode 22 and the circuit electrode 32 is excellent in long-term reliability.
另外,在上述實施形態中,使用膜狀接著劑1製造連接結構體,但亦可使用未形成為膜狀的接著劑組成物代替膜狀接著劑1。該情況下,若使接著劑組成物溶解於溶劑,並將該溶液塗佈於第一電路構件20或第二電路構件30的任一電路構件上進行乾燥,則可使接著劑組成物介在於第一電路構件20及第二電路構件30間。 Further, in the above embodiment, the bonded structure is produced using the film-like adhesive 1, but the film-like adhesive 1 may be used instead of the adhesive composition which is not formed into a film. In this case, if the adhesive composition is dissolved in a solvent and the solution is applied to any of the first circuit member 20 or the second circuit member 30 to be dried, the adhesive composition can be interposed. Between the first circuit member 20 and the second circuit member 30.
[半導體裝置] [semiconductor device]
繼而,對本發明的半導體裝置的實施形態進行說明。圖4是表示本發明的半導體裝置的一個實施形態的概略剖面圖。如圖4所示般,本實施形態的半導體裝置2具備:半導體元件50、及成為半導體元件的支撐構件的基板60,在半導體元件50及基板60之間,可設置將這些進行電性連接的半導體元件連接構件80。另 外,半導體元件連接構件80積層於基板60的主面60a上,半導體元件50進一步積層於該半導體元件連接構件80上。 Next, an embodiment of the semiconductor device of the present invention will be described. Fig. 4 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention. As shown in FIG. 4, the semiconductor device 2 of the present embodiment includes a semiconductor element 50 and a substrate 60 serving as a supporting member of the semiconductor element. The semiconductor element 50 and the substrate 60 can be electrically connected to each other. The semiconductor element connection member 80. another Further, the semiconductor element connecting member 80 is laminated on the main surface 60a of the substrate 60, and the semiconductor element 50 is further laminated on the semiconductor element connecting member 80.
基板60具備電路圖案61,電路圖案61在基板60的主面60a上經由半導體元件連接構件80或直接與半導體元件50進行電性連接。繼而,藉由密封材料70將這些進行密封,而形成半導體裝置2。 The substrate 60 is provided with a circuit pattern 61 that is electrically connected to the semiconductor element 50 via the semiconductor element connection member 80 on the main surface 60a of the substrate 60. Then, these are sealed by the sealing material 70 to form the semiconductor device 2.
作為半導體元件50的材料,並無特別限制,可使用:矽、鍺的4族的半導體元件,GaAs、InP、GaP、InGaAs、InGaAsP、AlGaAs、InAs、GaInP、AlInP、AlGaInP、GaNAs、GaNP、GaInNAs、GaInNP、GaSb、InSb、GaN、AlN、InGaN、InNAsP等的III-V族化合物半導體元件,HgTe、HgCdTe、CdMnTe、CdS、CdSe、MgSe、MgS、ZnSe、ZeTe等的II-VI族化合物半導體元件,以及CuInSe(CIS)等各種者。 The material of the semiconductor element 50 is not particularly limited, and a semiconductor device of four groups of germanium or germanium may be used, and GaAs, InP, GaP, InGaAs, InGaAsP, AlGaAs, InAs, GaInP, AlInP, AlGaInP, GaNAs, GaNP, GaInNAs. Group III-V compound semiconductor device such as GaInNP, GaSb, InSb, GaN, AlN, InGaN, InNAsP, etc., II-VI compound semiconductor device such as HgTe, HgCdTe, CdMnTe, CdS, CdSe, MgSe, MgS, ZnSe, ZeTe, etc. And various people such as CuInSe (CIS).
半導體元件連接構件80藉由上述本發明的接著劑組成物的硬化物形成,含有絕緣性物質11及導電粒子7。導電粒子7不僅配置於半導體元件50與電路圖案61之間,而且亦配置於半導體元件50與主面60a之間。在本實施形態的半導體裝置2中,半導體元件50與電路圖案61經由導電粒子7而電性連接。因此,可充分地降低半導體元件50及電路圖案61間的連接電阻。因此,可使半導體元件50及電路圖案61間的電流的流通順暢,並可充分地發揮半導體所具有的功能。另外,藉由將該導電粒子7設為上述的調配比例,而亦可表現出電性連接的各向異性。 The semiconductor element connecting member 80 is formed of the cured product of the adhesive composition of the present invention described above, and contains the insulating material 11 and the conductive particles 7. The conductive particles 7 are disposed not only between the semiconductor element 50 and the circuit pattern 61 but also between the semiconductor element 50 and the main surface 60a. In the semiconductor device 2 of the present embodiment, the semiconductor element 50 and the circuit pattern 61 are electrically connected via the conductive particles 7. Therefore, the connection resistance between the semiconductor element 50 and the circuit pattern 61 can be sufficiently reduced. Therefore, the flow of current between the semiconductor element 50 and the circuit pattern 61 can be made smooth, and the function of the semiconductor can be sufficiently exhibited. Further, by setting the conductive particles 7 to the above-described blending ratio, the anisotropy of the electrical connection can also be exhibited.
半導體元件連接構件80包含含有上述本發明的接著劑組成物的電路連接材料的硬化物。因此,半導體元件連接構件40對於半導體元件50及基板60的接著強度充分地提高,且可充分地降低半導體元件50及電路圖案61間的連接電阻。並且,可使該狀態長期地持續。另外,可藉由低溫短時間內的加熱而形成半導體元件連接構件,因此可減小對半導體元件等的影響。因此,可充分地提高半導體元件50及基板60間的電氣特性的長期可靠性。 The semiconductor element connecting member 80 includes a cured product of a circuit connecting material containing the above-described adhesive composition of the present invention. Therefore, the bonding strength of the semiconductor element connecting member 40 to the semiconductor element 50 and the substrate 60 is sufficiently improved, and the connection resistance between the semiconductor element 50 and the circuit pattern 61 can be sufficiently reduced. Also, this state can be continued for a long time. Further, since the semiconductor element connecting member can be formed by heating at a low temperature for a short period of time, the influence on the semiconductor element or the like can be reduced. Therefore, the long-term reliability of the electrical characteristics between the semiconductor element 50 and the substrate 60 can be sufficiently improved.
以上,對本發明的較佳的實施形態進行了說明,但本發明並不限定於上述實施形態。 Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the above embodiments.
以下,根據實施例及比較例對本發明進行更具體地說明,但本發明並不受實施例任何限定。 Hereinafter, the present invention will be more specifically described based on examples and comparative examples, but the present invention is not limited by the examples.
(實施例1) (Example 1)
使用TA-60(三亞普羅(San-Apro)股份有限公司製品名、α-萘基甲基-4-羥基苯基甲基鋶三(全氟乙基)三氟磷酸鹽)作為(A)成分、縮水甘油醚型環氧化合物YL980(日本環氧樹脂股份有限公司製品名、雙酚A型環氧樹脂)作為(B)成分。使用苯氧樹脂(YP-70、東都化成股份有限公司製商品名)作為膜形成性聚合物。另外,製作使用平均粒徑為3μm、比重為2.5的導電粒子,上述導電粒子是在以聚苯乙烯為核的粒子的表面,設置厚度為0.2μm的鎳層,並在該鎳層的外側設置厚度為0.02μm的金層而成。另外,使用氫氧化鋁粉末作為防腐蝕劑。 TA-60 (San-Apro Co., Ltd. product name, α-naphthylmethyl-4-hydroxyphenylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate) was used as the component (A) A glycidyl ether type epoxy compound YL980 (product name of Japan Epoxy Resin Co., Ltd., bisphenol A type epoxy resin) is used as the component (B). A phenoxy resin (YP-70, trade name, manufactured by Tohto Kasei Co., Ltd.) was used as the film-forming polymer. Further, conductive particles having an average particle diameter of 3 μm and a specific gravity of 2.5 were used, and the conductive particles were provided with a nickel layer having a thickness of 0.2 μm on the surface of particles having polystyrene as a core, and were disposed outside the nickel layer. It is made of a gold layer with a thickness of 0.02 μm. In addition, aluminum hydroxide powder is used as an anticorrosive agent.
以表1所示的混合比調配(A)成分、(B)成分及膜形成性聚合物,繼而調配分散8體積%的導電粒子,並使用塗敷裝置塗佈於厚度為40μm的PET樹脂膜上,在70℃下藉由5分鐘的熱風乾燥,而獲得接著劑層的厚度為20μm的膜狀接著劑。 The component (A), the component (B), and the film-forming polymer were blended at a mixing ratio shown in Table 1, and then 8 vol% of conductive particles were dispersed and applied to a PET resin film having a thickness of 40 μm using a coating device. On the other hand, a film-like adhesive having a thickness of the adhesive layer of 20 μm was obtained by hot air drying at 70 ° C for 5 minutes.
(實施例2) (Example 2)
使用α-萘基甲基-4-羥基苯基甲基鋶三(三氟甲磺醯基)甲基化物(PMNS TFSM)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 The same method as in Example 1 except that α-naphthylmethyl-4-hydroxyphenylmethyltris(trifluoromethanesulfonyl)methide (PMNS TFSM) was used as the component (A). A film-like adhesive was obtained. Table 1 shows the mixing ratio of each component.
(實施例3) (Example 3)
使用3-甲基-2-丁烯基四亞甲基鋶三(全氟乙基)三氟磷酸酯(MBTS TFEP)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 The same procedure as in Example 1 was carried out except that 3-methyl-2-butenyltetramethylenesulfonium tris(perfluoroethyl)trifluorophosphate (MBTS TFEP) was used as the component (A). Film-like adhesive. Table 1 shows the mixing ratio of each component.
(實施例4) (Example 4)
使用肉桂基四亞甲基鋶三(全氟乙基)三氟磷酸酯(CMS TFEP)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 A film-like adhesive agent was obtained in the same manner as in Example 1 except that cinnamyltetramethylenesulfonium tris(perfluoroethyl)trifluorophosphate (CMS TFEP) was used as the component (A). Table 1 shows the mixing ratio of each component.
(比較例1) (Comparative Example 1)
使用SI-60(三新化學工業股份有限公司製品名、α-萘基甲基-4-羥基苯基甲基鋶六氟銻酸鹽)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 The SI-60 (product name of Sanshin Chemical Industry Co., Ltd., α-naphthylmethyl-4-hydroxyphenylmethyl hexafluoroantimonate) was used as the component (A), and the examples were A film-like adhesive was obtained in the same manner. Table 1 shows the mixing ratio of each component.
(比較例2) (Comparative Example 2)
使用CPI-100A(三亞普羅股份有限公司製品名、4-苯基苯硫基二苯基鋶六氟銻酸鹽)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 A film was obtained in the same manner as in Example 1 except that CPI-100A (product name of Sanya Pro Co., Ltd., 4-phenylphenylthiodiphenylphosphonium hexafluoroantimonate) was used as the component (A). Binder. Table 1 shows the mixing ratio of each component.
(比較例3) (Comparative Example 3)
使用CPI-200K(三亞普羅股份有限公司製品名、4-苯基苯硫基二苯基鋶三(全氟乙基)三氟磷酸鹽)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 CPI-200K (product name of Sanya Pro Co., Ltd., 4-phenylphenylthiodiphenylphosphonium tris(perfluoroethyl)trifluorophosphate) was used as the component (A), and the examples were A film-like adhesive was obtained in the same manner. Table 1 shows the mixing ratio of each component.
(比較例4) (Comparative Example 4)
使用四亞甲基α-萘基甲基鋶三(全氟乙基)三氟磷酸酯(MPS TFEP)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。 A film-like adhesive agent was obtained in the same manner as in Example 1 except that tetramethylene α-naphthylmethyl sulfonium tris(perfluoroethyl)trifluorophosphate (MPS TFEP) was used as the component (A). . Table 1 shows the mixing ratio of each component.
(比較例5) (Comparative Example 5)
使用4-羥基苯基甲基肉桂基鋶三(全氟乙基)三氟磷酸酯(PMCS TFEP)作為(A)成分,除此以外,以與實施例1相同的方法獲得膜狀接著劑。表1表示各成分的混合比。另外,表1中混合比以質量份表示。 A film-like adhesive agent was obtained in the same manner as in Example 1 except that 4-hydroxyphenylmethylcinnamyltris(perfluoroethyl)trifluorophosphate (PMCS TFEP) was used as the component (A). Table 1 shows the mixing ratio of each component. In addition, the mixing ratio in Table 1 is represented by parts by mass.
將實施例及比較例中所用的(A)成分的鋶鹽化合物表示於表2。 The onium salt compounds of the component (A) used in the examples and the comparative examples are shown in Table 2.
[示差掃描熱量測定] [Differential scanning calorimetry]
進行實施例及比較例中所得的膜狀接著劑的示差掃描熱量測 定,調查發熱峰值的有無。 The differential scanning calorimetry of the film-like adhesive obtained in the examples and the comparative examples was carried out. Determine whether to investigate the presence or absence of fever peaks.
在比較例2及比較例3中所得的膜狀接著劑中,未辨認出發熱峰值。另外,比較例5中所得的膜狀接著劑在測定前硬化。實施例1~實施例4以及比較例1及比較例4中所得的膜狀接著劑給出發熱峰值。將此時的溫度表示於表3。 In the film-like adhesive obtained in Comparative Example 2 and Comparative Example 3, the onset heat peak was not recognized. Further, the film-like adhesive obtained in Comparative Example 5 was hardened before the measurement. The film-like adhesives obtained in Examples 1 to 4 and Comparative Examples 1 and 4 gave heat generation peaks. The temperature at this time is shown in Table 3.
在示差掃描熱量測定中,在(A)成分為具有α-萘基甲基-4-羥基苯基甲基鋶的TA-60(Y-=[P(C2F5)3F3]-、實施例1)及PMNS TFSM(Y-=[C(CF3SO2)3]-、實施例2)時,與SI-60(Y-=[SbF6]-、比較例1)同樣地在110℃左右觀測到發熱峰值,並辨認出同等的低溫硬化性。 In the differential scanning calorimetry, the component (A) is TA-60 (Y - = [P(C 2 F 5 ) 3 F 3 ] - having α-naphthylmethyl-4-hydroxyphenylmethylhydrazine In the case of Example 1) and PMNS TFSM (Y - = [C(CF 3 SO 2 ) 3 ] - , and Example 2), similarly to SI-60 (Y - = [SbF 6 ] - , Comparative Example 1) A peak of heat generation was observed at about 110 ° C, and the same low-temperature hardenability was recognized.
另外,在示差掃描熱量測定中,在(A)成分為具有3個芳基的鋶鹽化合物(比較例2及比較例3)時,未辨認出發熱峰值,但在(A)成分為具有經取代的芳基甲基與經取代的芳基的鋶鹽化合物(實施例1及實施例2以及比較例1)時,在110℃左右 存在發熱峰值,在(A)成分為具有經甲基或苯基取代的烯丙基與烷基的鋶鹽化合物(實施例3及實施例4)時,在120℃左右存在發熱峰值,並分別辨認出同等的低溫硬化性。另一方面,在(A)成分為具有經取代的芳基甲基及烷基的鋶鹽化合物(比較例4)時,在150℃左右存在發熱峰值,與實施例的(A)成分相比,在高溫下辨認出硬化性。在(A)成分為具有經取代的烯丙基與經取代的芳基的鋶鹽化合物(比較例5)時,確認到在測定前進行硬化,並且保存穩定性差。 Further, in the differential scanning calorimetry, when the component (A) is a sulfonium salt compound having three aryl groups (Comparative Example 2 and Comparative Example 3), the starting heat peak is not recognized, but the component (A) has a When the substituted arylmethyl group and the substituted aryl group sulfonium salt compound (Example 1 and Example 2 and Comparative Example 1) are at about 110 ° C There is a peak of heat generation, and when the component (A) is an onium salt compound having an allyl group and an alkyl group substituted by a methyl group or a phenyl group (Examples 3 and 4), there is a peak of heat generation at about 120 ° C, and respectively The same low temperature hardenability is recognized. On the other hand, when the component (A) is a phosphonium salt compound having a substituted arylmethyl group and an alkyl group (Comparative Example 4), there is a peak of heat generation at about 150 ° C, which is comparable to the component (A) of the example. , the hardenability is recognized at high temperatures. When the component (A) is an onium salt compound having a substituted allyl group and a substituted aryl group (Comparative Example 5), it was confirmed that the component was hardened before the measurement, and the storage stability was poor.
[硬化率測定試驗] [hardening rate measurement test]
在加熱板上、在100℃~160℃下,將實施例1~實施例4以及比較例1及比較例4的膜狀接著劑分別加熱10秒鐘使其硬化。藉由紅外線吸收光譜,求出將加熱前後的環氧基的訊號強度的面積值的差除以加熱前的訊號強度的面積值而得者作為硬化率。將結果表示於圖5。 The film-like adhesives of Examples 1 to 4 and Comparative Examples 1 and 4 were each heated on a hot plate at 100 ° C to 160 ° C for 10 seconds to be cured. From the infrared absorption spectrum, the difference between the area value of the signal intensity of the epoxy group before and after heating was divided by the area value of the signal intensity before heating, and the curing rate was obtained. The results are shown in Fig. 5.
使用作為α-萘基甲基-4-羥基苯基甲基鋶鹽化合物的TA-60(Y-=[P(C2F5)3F3]-)的實施例1及使用PMNS TFSM(Y-=[C(CF3SO2)3]-)的實施例2,與使用SI-60(Y-=[SbF6]-)的比較例1同樣,在10秒鐘的短時間內表現出高的硬化率,並辨認出同等的低溫快速硬化性。 Example 1 using TA-60 (Y - = [P(C 2 F 5 ) 3 F 3 ] - ) as α-naphthylmethyl-4-hydroxyphenylmethyl phosphonium salt compound and using PMNS TFSM ( Example 2 of Y - = [C(CF 3 SO 2 ) 3 ] - ), in the same manner as Comparative Example 1 using SI-60 (Y - = [SbF 6 ] - ), exhibited in a short time of 10 seconds The high hardening rate is obtained, and the same low temperature rapid hardening property is recognized.
使用具有經甲基或苯基取代的烯丙基與烷基的鋶鹽化合物的實施例3及實施例4,表現出與實施例1及實施例2以及比較例1同樣的低溫快速硬化性。另一方面,使用具有經取代的芳 基甲基與烷基的鋶鹽化合物的比較例4,幾乎未進行硬化。 Examples 3 and 4 using an onium salt compound having an allyl group and an alkyl group substituted with a methyl group or a phenyl group exhibited the same low-temperature rapid hardenability as in Example 1 and Example 2 and Comparative Example 1. On the other hand, use a substituted aromatic In Comparative Example 4, a sulfonium salt compound of a methyl group and an alkyl group, hardening was hardly performed.
[保存穩定性試驗] [storage stability test]
將實施例1~實施例4及比較例1~比較例5的膜狀接著劑在40℃的恆溫裝置中放置5天。藉由紅外線吸收光譜,求出放置後的硬化率。將結果表示於表3。 The film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 were allowed to stand in a thermostat at 40 ° C for 5 days. The hardening rate after standing was determined by the infrared absorption spectrum. The results are shown in Table 3.
在實施例1~實施例4及比較例1~比較例4中,幾乎未進行硬化而保存穩定性良好。另一方面,比較例5在試驗前硬化而保存穩定性低。 In Examples 1 to 4 and Comparative Examples 1 to 4, hardening was hardly performed and storage stability was good. On the other hand, Comparative Example 5 was hardened before the test and the storage stability was low.
[氟離子濃度的測定] [Measurement of fluoride ion concentration]
藉由純水將實施例1~實施例4及比較例1~比較例5的膜狀接著劑稀釋至100倍後,在121℃/100%RH的環境下加熱15小時並萃取。將萃取水過濾後藉由陰離子層析儀(戴安(DIONEX)公司製造的IC-20)測定氟離子濃度。將結果表示於表3。 The film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 were diluted to 100 times with pure water, and then heated in an environment of 121 ° C / 100% RH for 15 hours and extracted. The filtered water was filtered, and the fluoride ion concentration was measured by an anion chromatograph (IC-20 manufactured by DIONEX). The results are shown in Table 3.
在使用具有[P(C2F5)3F3]-或[C(CF3SO2)3]-作為Y-的鋶鹽化合物的實施例1~實施例4及比較例3~比較例5中,氟離子濃度小於100ppm而低,但在使用具有[SbF6]-的鋶鹽化合物的比較例1及比較例2中,確認到氟離子濃度分別為10500ppm、6800ppm而極高。 Examples 1 to 4 and Comparative Examples 3 to Comparative Examples using an onium salt compound having [P(C 2 F 5 ) 3 F 3 ] - or [C(CF 3 SO 2 ) 3 ] - as Y - 5, the fluoride ion concentration of less than 100ppm low, but having [SbF 6] - Comparative Example 1 and the sulfonium salt compound in Comparative Example 2, it was confirmed that the fluoride ion concentration is 10500ppm, 6800ppm and high.
[連接結構體的製作] [Production of connection structure]
在玻璃基板(康寧(Corning)#1737、外形38mm×28mm、厚度為0.5mm、表面具有ITO(氧化銦錫)配線圖案(圖案寬度為50μm、間距為50μm)者)上,以2mm×20mm的大小,自 PET樹脂膜轉印實施例1~實施例4及比較例1~比較例5的各膜狀接著劑。在表4所示的安裝條件(溫度與時間)下,對IC晶片(外形1.7mm×17.2mm、厚度為0.55mm、凸塊(bump)的大小為50μm×50μm、凸塊的間距為50μm),施加80MPa(凸塊面積換算)負荷進行加熱加壓而安裝。另外,保存穩定性試驗後的膜狀接著劑亦同樣地安裝。 On a glass substrate (Corning #1737, shape 38 mm × 28 mm, thickness 0.5 mm, surface ITO (indium tin oxide) wiring pattern (pattern width 50 μm, pitch 50 μm), 2 mm × 20 mm Size, from Each of the film-like adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 was transferred to the PET resin film. Under the mounting conditions (temperature and time) shown in Table 4, the IC wafer (outer shape 1.7 mm × 17.2 mm, thickness 0.55 mm, bump size 50 μm × 50 μm, bump pitch 50 μm) Then, a load of 80 MPa (contrast area conversion) was applied and heated and pressurized to be mounted. Further, the film-like adhesive after the storage stability test was also mounted in the same manner.
[連接電阻的評價] [Evaluation of connection resistance]
測定以如上述方式製作的連接結構體的鄰接電路間的電阻值(14個端子測定中的最大值)。將所得的結果表示於表4。 The resistance value (the maximum value among the 14 terminal measurements) between the adjacent circuits of the bonded structure produced as described above was measured. The results obtained are shown in Table 4.
在使用實施例1~實施例4及比較例1的膜狀接著劑時,在保存穩定性試驗前後均小於5Ω而表現出良好的值。在使用比較例2及比較例3的膜狀接著劑時,未進行硬化而無法連接。另外,在使用比較例4的膜狀接著劑時,成為高的電阻值。在比較例5中,在連接結構體的製作前進行了硬化。 When the film-like adhesives of Examples 1 to 4 and Comparative Example 1 were used, they were all less than 5 Ω before and after the storage stability test, and showed good values. When the film-like adhesives of Comparative Example 2 and Comparative Example 3 were used, they were not cured and could not be joined. Further, when the film-like adhesive of Comparative Example 4 was used, it became a high resistance value. In Comparative Example 5, the connection structure was hardened before the production of the bonded structure.
[連接結構體的配線腐蝕的觀察] [Observation of wiring corrosion of connected structures]
觀察將以如上述方式製作的連接結構體(使用未進行保存穩定性試驗的膜狀接著劑者)在85℃85%RH的環境下處理24小時後的ITO配線的外觀。將所得的結果表示於表4。 The appearance of the ITO wiring after the treatment of the bonded structure (the film-form adhesive which was not subjected to the storage stability test) prepared in the above manner was treated in an environment of 85 ° C and 85% RH for 24 hours. The results obtained are shown in Table 4.
在使用具有[SbF6]-作為Y-的鋶鹽化合物的比較例1及比較例2中,辨認出了顯著的配線的腐蝕的產生,但在使用具有[P(C2F5)3F3]-或[C(CF3SO2)3]-作為Y-的鋶鹽化合物的實施例1~實施例4及比較例3~比較例5中,未辨認出腐蝕。 In Comparative Example 1 and Comparative Example 2 using a sulfonium salt compound having [SbF 6 ] - as Y - , significant occurrence of corrosion of wiring was recognized, but using [P(C 2 F 5 ) 3 F 3 ] - or [C(CF 3 SO 2 ) 3 ] - In Examples 1 to 4 and Comparative Examples 3 to 5 as Y - onium salt compounds, corrosion was not recognized.
根據以上所述判明,含有Y-以[P(R4)a(F)6-a]-或[C((R5)SO2)3]-表示、特別是[P(C2F5)3F3]-或[C(CF3SO2)3]-的上述通式(I)所示的鋶鹽化合物而成的接著劑組成物,與含有[SbF6]-而成者具有同等的低溫快速硬化性及保存穩定性,而且氟離子難以脫離,因此可抑制腐蝕的產生,並且連接可靠性優異。另外判明,上述通式(I)所示的鋶鹽化合物在為R1為經取代或未經取代的芳基甲基、R2為經取代或未經取代的芳基、R3為甲基時,或在R1為經取代或未經取代的烯丙基、R2及R3為烷基、或R2及R3為R2與R3鍵結在一起形成的環時,適合於可在低溫短時間內連接的接著劑組成物的聚合起始劑。 According to the above, it is found that Y - is represented by [P(R 4 ) a (F) 6-a ] - or [C((R 5 )SO 2 ) 3 ] - , especially [P(C 2 F 5 ) An adhesive composition of 3 F 3 ] - or [C(CF 3 SO 2 ) 3 ] - an onium salt compound represented by the above formula (I), and a composition containing [SbF 6 ] - The same low-temperature rapid hardenability and storage stability, and the fluorine ions are hard to be detached, so that the occurrence of corrosion can be suppressed and the connection reliability is excellent. Further it was found, sulfonium salt compound of the formula (I) is represented by the R 1 is a substituted or unsubstituted arylmethyl group, R 2 is a substituted or unsubstituted aryl group, R 3 is methyl Or when R 1 is a substituted or unsubstituted allyl group, R 2 and R 3 are alkyl groups, or R 2 and R 3 are a ring formed by bonding R 2 and R 3 together, A polymerization initiator which can be attached to the adhesive composition at a low temperature for a short time.
1‧‧‧膜狀接著劑 1‧‧‧membranous adhesive
5‧‧‧接著劑成分 5‧‧‧Binder ingredients
7‧‧‧導電粒子 7‧‧‧Electrical particles
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