TWI605517B - Substrate processing method and equipment - Google Patents

Substrate processing method and equipment Download PDF

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TWI605517B
TWI605517B TW105134791A TW105134791A TWI605517B TW I605517 B TWI605517 B TW I605517B TW 105134791 A TW105134791 A TW 105134791A TW 105134791 A TW105134791 A TW 105134791A TW I605517 B TWI605517 B TW I605517B
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reaction chamber
gas
detection window
etching
shielding gas
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TW201719752A (zh
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Ping Yang
Lei Wan
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Advanced Micro-Fabrication Equipment Inc
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Description

基板處理方法及設備
本發明係提供半導體加工領域，尤其是提供可提高蝕刻終點判斷準確性的基板處理方法與設備。
積體電路製造製程是一種平面製作製程，其結合光刻、蝕刻、沉積、離子注入等多種製程，在同一基底上形成大量各種類型的複雜元件，並將其互相連接以具有完整的電子功能。其中，任何一步製程出現偏差，都可能會導致電路的性能參數偏離設計值。目前，隨著超大型積體電路的元件特徵尺寸不斷地等比例縮小，集成度不斷地提高，對各步製程的控制及其製程結果的精確度提出了更高的要求。
以蝕刻製程為例，積體電路製造中，常需要利用蝕刻技術形成各種蝕刻圖形，如接觸孔/通孔圖形、溝槽隔離圖形或柵極圖形等。而電漿蝕刻(乾式法蝕刻)是習知蝕刻製程中最為常用的方法之一，蝕刻的準確度直接關係到蝕刻圖形的特徵尺寸(CD，Critical Dimension)。因此，電漿蝕刻中蝕刻終點的控制，成為電漿蝕刻中的一個關鍵製程。
光學發射光譜法(OES)是最常用的終點檢測方法之一，是由於它可以很容易集成在蝕刻機上且不影響蝕刻過程的進行，對反應的細微變化可以進行非常靈敏的檢測，可以即時的提供蝕刻過程中的許多有用的資訊。
OES技術主要是監視電漿在光譜的UV/VIS(200nm-1100nm)部分發出的輻射。由發射輻射的光譜確定電漿的成分，特別是反應性蝕刻物質或 蝕刻副產物的存在。在蝕刻製程中，特別是蝕刻終點，由於蝕刻的材料發生轉換，導致電漿的成分發生變化，導致發射光譜的改變。藉由不斷地監視電漿發射，OES終點系統能夠檢測發射光譜的變化並確定何時所蝕刻的膜層被完全清除。
但是，隨著時間的累積，OES終點監測的準確性會逐步降低。
本發明提供一種基板處理方法，包括將基板送入由複數個壁圍成的反應腔內；向反應腔內通入蝕刻氣體，以對基板進行蝕刻；藉由設置在所述壁上的檢測視窗獲取反應腔內的光學訊號，以確定蝕刻終點；在蝕刻過程中，在檢測視窗處形成保護氣流，以防止或減少蝕刻氣體或蝕刻副產物到達檢測視窗。
較佳地，藉由在檢測視窗所在的壁上形成自上而下的氣幕，而實現防止或減少蝕刻氣體或蝕刻副產物到達檢測視窗。
較佳地，反應腔內設置有環，基板設置在所述環內，檢測視窗所在的壁與所述環共同限定了保護氣流的路徑。
較佳地，所述環在與檢測視窗鄰近處設置有開口，以保證在檢測視窗處可獲得反應腔內的光學訊號。
較佳地，形成保護氣流的氣體包括氬氣或氦氣。
本發明更提供一種基板處理設備，包括由複數個壁圍成的反應腔； 設置在反應腔內的基座，用於固定基板；設置在反應腔內的氣體噴淋頭，用於引入氣體至反應腔內，所述氣體噴淋頭與所述基座之間為電漿處 理區域；檢測視窗，設置在所述反應腔的所述壁上，用於獲取反應腔內的光學訊號，以確定蝕刻終點； 設置在反應腔內的環，所述電漿處理區域位於所述環內，檢測視窗所在的壁與所述環之間形成間隙；保護氣體入口，設置在所述間隙處，用於引入保護氣體至所述間隙內。
較佳地，所述環在與檢測視窗鄰近處設置有開口，以保證在檢測視窗處可獲得反應腔內的光學訊號。
較佳地，所述保護氣體包括氬氣或氦氣。
較佳地，更包括保護氣體源，用於提供保護氣體；視窗清洗氣體源，用於提供視窗清洗氣體；控制器，用於控制保護氣體源在蝕刻過程中藉由保護氣體入口向間隙內提供保護氣體，控制視窗清洗氣體源在清洗階段藉由保護氣體入口向間隙內提供清洗氣體，以清洗檢測視窗。
較佳地，所述清洗氣體包括氧氣。
本發明另提供一種基板處理設備，包括：由複數個壁圍成的反應腔； 設置在反應腔內的基座，用於固定基板；設置在反應腔內的氣體噴淋頭，用於引入氣體至反應腔內，所述氣體噴淋頭與所述基座之間為電漿處理區域；檢測視窗，設置在所述反應腔的所述壁上，用於獲取反應腔內的光學訊號，以確定蝕刻終點；保護氣體入口，用於引入保護氣體至所述反應腔內，自保護氣體入口進入的保護氣體在檢測視窗的表面形成氣流，以防止或減少蝕刻氣體或蝕刻副產物到達檢測視窗。
較佳地，更包括保護氣體源，用於提供保護氣體；視窗清洗氣體源，用於提供視窗清洗氣體；控制器，用於控制保護氣體源在蝕刻過程中藉由保護氣體入口向反應腔提供保護氣體，控制視窗清洗氣體源在清洗階段藉由保護氣體入口向反應腔提供清洗氣體，以清洗檢測視窗。
2‧‧‧反應腔
3‧‧‧基座
4‧‧‧氣體噴淋頭
5‧‧‧檢測視窗
6‧‧‧環
7‧‧‧保護氣體入口
9‧‧‧泵
21、22、23‧‧‧壁
65‧‧‧開口
W‧‧‧基板
G‧‧‧間隙
PS‧‧‧電漿處理區域
第1圖是依據本發明一個實施例的基板處理設備的結構示意圖。
第2圖是第1圖所示設備的另一實施例的結構示意圖。
第3圖是依據本發明一個實施例的基板處理方法的流程圖。
為使本發明的內容更加清楚易懂，以下結合說明書圖式，對本發明的內容作進一步說明。當然本發明並不局限於該具體實施例，本領域內的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。
在常規的基板處理設備中，蝕刻過程所產生的蝕刻副產物(比如，氟碳氣體)可擴散至並沉積於檢測視窗的內側。沉積於檢測視窗的蝕刻副產物可吸收電漿發出的光學訊號(特定波長的光譜)。蝕刻副產物累積的厚度越大，吸收光學訊號的能力越強。然而，位於反應腔外的感測器正是藉由自檢測視窗處獲取的光學訊號來判斷反應腔內化學反應狀態的變化，進而及時、準確地確定蝕刻終點。由於檢測視窗表面附著的蝕刻副產物對光學訊號的吸收，使得透過檢測視窗被檢測到的光學訊號強度明顯小於它的實際強度。這個偏差可明顯影響終點監測的準確度。
根據發明人的上述理論，蝕刻持續的時間越長，檢測視窗表面累積的蝕刻副產物越厚，終點監測的準確度理論上會越差。生產實踐的經驗也與這個推論相符。
基於上述認識和理論，發明人提出一種新的基板處理設備與方法，其藉由在檢測視窗內側的表面形成氣流，防止或減少蝕刻副產物到達檢測視窗，以避免或減少蝕刻副產物在檢測視窗的沉積，從而保證終點監測的準確性。
第1圖是依據本發明一個實施例的基板處理設備的結構示意圖。基板處理設備可為電漿蝕刻設備，比如，電容耦合式電漿設備或電感耦合式電漿設備。如第1圖所示，基板處理設備包括由複數個壁21、22與23圍成的反應腔2，其中，壁21為底壁，壁22為側壁，壁23為頂壁。反應腔2內設置有用於固定基板W的基座3、用於引入蝕刻氣體至反應腔2內的氣體噴淋頭4，氣體噴淋頭4與基座3之間為電漿處理區域PS。基板處理設備還可包括電漿產生裝置，用於將電漿處理區域PS的蝕刻氣體解離為電漿與自由基。到達基板W上表面的電漿與自由基可將基板W蝕刻成預定的圖案。蝕刻所產生的蝕刻副產物與未來得及參與反應的蝕刻氣體會被泵9抽出反應腔2。
反應腔2的壁22上設置有檢測視窗5，用於獲取反應腔2內的光學訊號，以確定蝕刻終點(何時結束蝕刻)。為避免或減少蝕刻副產物累積在檢測視窗5上，基板處理設備更設置有環6與保護氣體入口7。其中，環6設置在反應腔2內，並環繞電漿處理區域PS(即，電漿處理區域PS位於環6內)。檢測視窗5所在的壁22與環6之間形成間隙G。
保護氣體入口7設置在間隙G處，用於引入保護氣體至間隙G內。保護氣體可包括氬氣、氦氣或其它不活潑的氣體。自保護氣體入口7進入的保護氣體可在間隙G內形成自上而下的氣流(也可稱之為氣幕或保護層)，該氣流可避免或減少蝕刻副產物到達檢測視窗5。另外，環6的存在也可減少到達檢測視窗5的蝕刻副產物或電漿、自由基。
環6在與檢測視窗5相鄰近的位置處可設置開口65，開口65大小與位置的設置與檢測視窗5處感測器採集光學訊號的角度相關，以保證在檢測視窗5處可充分獲得反應腔2內的光學訊號。
為保護氣體入口7供應氣體的源可包括兩個：用於提供保護氣體的保護氣體源(未圖示)，用於提供視窗清洗氣體的視窗清洗氣體源(未圖示)。清洗氣體包括氧氣或其它可去除蝕刻副產物的氣體。一控制器(未圖示)可用於控制該兩氣體源與保護氣體入口7的連通狀態。比如，在蝕刻過程中，可使保護氣體入口7僅被保護氣體源供應保護氣體，以減少副產物在檢測視窗5表面的累積；在視窗清洗階段，可使保護氣體入口7僅被視窗清洗氣體源供應清洗氣體，以清洗檢測視窗5。
第2圖是第1圖所示設備的另一實施例。除不包含第1圖所示的環6外，第2圖所示設備的結構、工作機理與工作流程與第1圖所示設備相同，這裡不再贅述。第2圖中，雖無部件嚴格約束自保護氣體入口7進入的保護氣體的路徑，但藉由設定進入的保護氣體的氣流強度(即，保護氣體的流量)，也可保證保護氣體主要沿壁22自上向下流動，藉此可避免或減少蝕刻副產物到達檢測視窗5，進而保證終點檢測的準確性和可靠性。
第3圖是基板處理方法的流程圖。第1與2圖所示設備均可依該方法進行操作。該方法主要包括以下步驟：將基板W送入由複數個壁圍成的反應腔2內；向反應腔2內通入蝕刻氣體，以對基板W進行蝕刻；藉由設置在壁22上的檢測視窗5獲取反應腔2內的光學訊號，以確定蝕刻終點；在蝕刻過程中，在檢測視窗5處形成保護氣流，以防止或減少蝕刻氣體或蝕刻副產物接近檢測視窗5。
雖然本發明已以較佳實施例揭示如上，然所述諸多實施例僅為了便於說明而舉例而已，並非用以限定本發明，本領域的技術人員在不脫離本發明精神和範圍的前提下可作若干的更動與潤飾，本發明所主張的保護範圍應以權利要求書所述為準。
2‧‧‧反應腔
3‧‧‧基座
4‧‧‧氣體噴淋頭
5‧‧‧檢測視窗
6‧‧‧環
7‧‧‧保護氣體入口
9‧‧‧泵
21、22、23‧‧‧壁
65‧‧‧開口
W‧‧‧基板
PS‧‧‧電漿處理區域

Claims (10)

  1. 一種基板處理方法，包括：將一基板送入由複數個壁圍成的一反應腔內；向該反應腔內通入一蝕刻氣體，以對該基板進行蝕刻；藉由設置在該壁上的一檢測視窗獲取該反應腔內的光學訊號，以確定蝕刻終點；在蝕刻過程中，在該檢測視窗處形成一保護氣流，以防止或減少該蝕刻氣體或一蝕刻副產物到達該檢測視窗；其中，該反應腔內設置有一環，該基板設置在該環內，該檢測視窗所在的該壁與該環共同限定了該保護氣流的路徑。
  2. 如申請專利範圍第1項所述之基板處理方法，其中藉由在該檢測視窗所在的該壁上形成自上而下的一氣幕，而實現防止或減少該蝕刻氣體或該蝕刻副產物到達該檢測視窗。
  3. 如申請專利範圍第1項所述之基板處理方法，其中該環在與該檢測視窗鄰近處設置有一開口，以保證在該檢測視窗處可獲得該反應腔內的光學訊號。
  4. 如申請專利範圍第1項所述之基板處理方法，其中形成該保護氣流的氣體包括氬氣或氦氣。
  5. 一種基板處理設備，包括：由複數個壁圍成的一反應腔；設置在該反應腔內的一基座，用於固定一基板；設置在該反應腔內的一氣體噴淋頭，用於引入氣體至該反應腔內，該氣體噴淋頭與該基座之間為電漿處理區域； 一檢測視窗，設置在該反應腔的該壁上，用於獲取該反應腔內的光學訊號，以確定蝕刻終點；設置在該反應腔內的一環，該電漿處理區域位於該環內，該檢測視窗所在的該壁與該環之間形成一間隙；一保護氣體入口，設置在該間隙處，用於引入保護氣體至該間隙內。
  6. 如申請專利範圍第5項所述之基板處理設備，其中該環在與該檢測視窗鄰近處設置有一開口，以保證在該檢測視窗處可獲得該反應腔內的光學訊號。
  7. 如申請專利範圍第5項所述之基板處理設備，其中該保護氣體包括氬氣或氦氣。
  8. 如申請專利範圍第5項所述之基板處理設備，其更包括：一保護氣體源，用於提供保護氣體；一視窗清洗氣體源，用於提供視窗一清洗氣體；一控制器，用於控制該保護氣體源在蝕刻過程中，藉由該保護氣體入口向一間隙內提供保護氣體，控制該視窗清洗氣體源在清洗階段，藉由該保護氣體入口向該間隙內提供該清洗氣體，以清洗該檢測視窗。
  9. 如申請專利範圍第8項所述之基板處理設備，其中該清洗氣體包括氧氣。
  10. 一種基板處理設備，包括：由複數個壁圍成的一反應腔；設置在該反應腔內的一基座，用於固定該基板； 設置在該反應腔內的一氣體噴淋頭，用於引入氣體至該反應腔內，該氣體噴淋頭與該基座之間為電漿處理區域；一檢測視窗，設置在該反應腔的該壁上，用於獲取該反應腔內的光學訊號，以確定蝕刻終點；一保護氣體入口，用於引入保護氣體至該反應腔內，自該保護氣體入口進入的保護氣體在該檢測視窗的表面形成一氣流，以防止或減少一蝕刻氣體或一蝕刻副產物到達該檢測窗口；一保護氣體源，用於提供保護氣體；一視窗清洗氣體源，用於提供視窗一清洗氣體；控制器，用於控制保護氣體源在蝕刻過程中，藉由保護氣體入口向該反應腔提供保護氣體，控制該視窗清洗氣體源在清洗階段，藉由保護氣體入口向該反應腔提供該清洗氣體，以清洗該檢測視窗。
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