TWI604268B - 光罩之製造方法、描繪裝置、光罩之檢查方法、光罩之檢查裝置、及顯示裝置之製造方法 - Google Patents
光罩之製造方法、描繪裝置、光罩之檢查方法、光罩之檢查裝置、及顯示裝置之製造方法 Download PDFInfo
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- TWI604268B TWI604268B TW104144313A TW104144313A TWI604268B TW I604268 B TWI604268 B TW I604268B TW 104144313 A TW104144313 A TW 104144313A TW 104144313 A TW104144313 A TW 104144313A TW I604268 B TWI604268 B TW I604268B
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- substrate
- main surface
- photomask
- pattern
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 57
- 239000000758 substrate Substances 0.000 claims description 202
- 238000012546 transfer Methods 0.000 claims description 163
- 239000010408 film Substances 0.000 claims description 128
- 238000007689 inspection Methods 0.000 claims description 112
- 238000009826 distribution Methods 0.000 claims description 65
- 238000005259 measurement Methods 0.000 claims description 60
- 238000013461 design Methods 0.000 claims description 55
- 230000007246 mechanism Effects 0.000 claims description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 230000000704 physical effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 238000012937 correction Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 239000013598 vector Substances 0.000 description 20
- 238000012360 testing method Methods 0.000 description 13
- 239000000470 constituent Substances 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/706833—Sampling plan selection or optimisation, e.g. select or optimise the number, order or locations of measurements taken per die, workpiece, lot or batch
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015028311A JP6559433B2 (ja) | 2015-02-17 | 2015-02-17 | フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201631381A TW201631381A (zh) | 2016-09-01 |
| TWI604268B true TWI604268B (zh) | 2017-11-01 |
Family
ID=56695537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104144313A TWI604268B (zh) | 2015-02-17 | 2015-12-29 | 光罩之製造方法、描繪裝置、光罩之檢查方法、光罩之檢查裝置、及顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6559433B2 (ko) |
| KR (2) | KR101834062B1 (ko) |
| CN (1) | CN105892227B (ko) |
| TW (1) | TWI604268B (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6963967B2 (ja) * | 2017-10-30 | 2021-11-10 | Hoya株式会社 | パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法 |
| KR102223816B1 (ko) | 2018-11-13 | 2021-03-05 | 정문성 | 쉐도우 마스크의 제조방법 및 이 제조방법에 의해 제조된 쉐도우 마스크 |
| TWI829807B (zh) * | 2018-11-30 | 2024-01-21 | 日商東京威力科創股份有限公司 | 製造製程之假想測定裝置、假想測定方法及假想測定程式 |
| CN113380701B (zh) * | 2021-05-28 | 2023-03-21 | 惠科股份有限公司 | 薄膜晶体管的制作方法和掩膜版 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62159425A (ja) * | 1986-01-08 | 1987-07-15 | Toshiba Mach Co Ltd | 荷電ビ−ム描画方法 |
| JP3393947B2 (ja) * | 1995-03-13 | 2003-04-07 | 株式会社東芝 | 半導体回路パターンの評価方法と評価システム及び描画方法及び描画システム |
| CN1196031C (zh) * | 1999-05-20 | 2005-04-06 | 麦克隆尼克激光系统有限公司 | 在平版印刷中用于减少误差的方法 |
| JP3947177B2 (ja) * | 2001-05-31 | 2007-07-18 | 株式会社東芝 | マスク基板の平坦度シミュレーションシステム |
| JP3675421B2 (ja) * | 2002-03-28 | 2005-07-27 | ソニー株式会社 | マスクパターン補正方法、マスク製造方法、マスクおよび半導体装置の製造方法 |
| JP4856798B2 (ja) * | 2006-10-18 | 2012-01-18 | Ｈｏｙａ株式会社 | 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法 |
| JP5331638B2 (ja) * | 2008-11-04 | 2013-10-30 | Ｈｏｙａ株式会社 | 表示装置製造用フォトマスクの製造方法及び描画装置 |
| JP5376987B2 (ja) * | 2009-02-18 | 2013-12-25 | キヤノン株式会社 | レチクルの製造方法、および面形状計測装置 |
| JP5683930B2 (ja) * | 2010-01-29 | 2015-03-11 | Hoya株式会社 | マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
| WO2011122608A1 (ja) * | 2010-03-30 | 2011-10-06 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| GB201017855D0 (en) * | 2010-10-22 | 2010-12-01 | Pilkington Group Ltd | Coating glass |
| JP5970021B2 (ja) * | 2013-08-20 | 2016-08-17 | Hoya株式会社 | フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法 |
-
2015
- 2015-02-17 JP JP2015028311A patent/JP6559433B2/ja active Active
- 2015-12-29 TW TW104144313A patent/TWI604268B/zh active
-
2016
- 2016-02-06 CN CN201610083100.4A patent/CN105892227B/zh active Active
- 2016-02-15 KR KR1020160017397A patent/KR101834062B1/ko active IP Right Grant
-
2017
- 2017-12-22 KR KR1020170178705A patent/KR101856912B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR101856912B1 (ko) | 2018-05-10 |
| KR20160101675A (ko) | 2016-08-25 |
| CN105892227B (zh) | 2020-01-31 |
| TW201631381A (zh) | 2016-09-01 |
| JP2016151636A (ja) | 2016-08-22 |
| KR20180001539A (ko) | 2018-01-04 |
| CN105892227A (zh) | 2016-08-24 |
| KR101834062B1 (ko) | 2018-03-02 |
| JP6559433B2 (ja) | 2019-08-14 |
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