TWI603026B - Apparatus for holding substrate - Google Patents

Apparatus for holding substrate Download PDF

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Publication number
TWI603026B
TWI603026B TW103129118A TW103129118A TWI603026B TW I603026 B TWI603026 B TW I603026B TW 103129118 A TW103129118 A TW 103129118A TW 103129118 A TW103129118 A TW 103129118A TW I603026 B TWI603026 B TW I603026B
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TW
Taiwan
Prior art keywords
substrate
suction
holding table
holding
channels
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TW103129118A
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Chinese (zh)
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TW201508200A (en
Inventor
梁相熙
白聖煥
金戊一
金鐘元
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Ap系統股份有限公司
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Publication of TW201508200A publication Critical patent/TW201508200A/en
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Publication of TWI603026B publication Critical patent/TWI603026B/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303Apparatus specially adapted to the manufacture of LCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68309Auxiliary support including alignment aids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68313Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices

Description

用於固持基底的設備 Device for holding a substrate

本發明是有關於一種固持基底的設備,且特別是有關於一種能夠在固持台上穩定地固持基底的設備。 The present invention relates to an apparatus for holding a substrate, and more particularly to an apparatus capable of stably holding a substrate on a holding table.

總地來說,用於固持基底的設備安置在用於製造例如液晶顯示器(light crystal display,LCD)、有機發光二極體(organic light emitting diode,OLED)等顯示裝置的處理腔室中。通用基底固持設備包含上面固持著基底的固持台,和多個垂直地穿過固持台並且被抬高的提升桿(lift bar)。所述提升桿輔助在固持台上支撐基底。當基底位於固持台上方時,提升桿被提升以支撐基底的下部部分,並且接著降低以允許在基底固持台上固持基底。 In general, the apparatus for holding a substrate is disposed in a processing chamber for manufacturing a display device such as a light crystal display (LCD), an organic light emitting diode (OLED), or the like. The universal substrate holding device includes a holding table on which the substrate is held, and a plurality of lift bars that are vertically passed through the holding table and raised. The lifter assists in supporting the substrate on the holding table. When the substrate is above the holding table, the lift bar is lifted to support the lower portion of the substrate and then lowered to allow the substrate to be held on the substrate holding table.

用於例如LCD、OLED等顯示裝置的玻璃基底的尺寸逐漸增加。當基底固持設備的所述多個提升桿支撐大型基底時,基底會因為自身的重量而發生彎曲,並且在基底固持在固持台上時發生滑動。因而,不方便再次對準基底,並且因此處理時間延長。 The size of a glass substrate used for a display device such as an LCD, an OLED, or the like is gradually increased. When the plurality of lift bars of the substrate holding device support the large substrate, the substrate may bend due to its own weight and slip when the substrate is held on the holding table. Thus, it is inconvenient to align the substrate again, and thus the processing time is extended.

第10-2004-0115542號韓國專利公開案中揭露了一種液晶顯示裝置的真空裝置。這裡,真空裝置包含:基座,上面固持 著基底;頭部,安置成對應於基底的背面,並且具有對應於基座一側的長度的預定寬度;以及提升桿,由穿過基座以便使頭部在真空腔室中垂直地移動的主體構成。 A vacuum apparatus of a liquid crystal display device is disclosed in Korean Patent Publication No. 10-2004-0115542. Here, the vacuum device comprises: a base, which is held on top a base; a head disposed to correspond to a back surface of the substrate and having a predetermined width corresponding to a length of one side of the base; and a lift rod passing through the base to vertically move the head in the vacuum chamber The main body is composed.

本發明提供一種用於在固持台上穩定地固持基底的設備。 The present invention provides an apparatus for stably holding a substrate on a holding table.

本發明還提供一種用於固持基底的設備,其能夠在固持台上固持基底時防止基底滑動。 The present invention also provides an apparatus for holding a substrate that is capable of preventing the substrate from sliding when the substrate is held on the holding table.

根據示範性實施例,一種用於在其頂面上固持基底的設備包含:固持台,所述基底固持在所述固持台的頂面上;多個抽吸通道(suction channel),垂直地穿過所述固持台的至少一個部分,並且所述多個抽吸通道佈置在所述固持台的寬度方向上以通過使用真空吸力來支撐所述基底;多個通風通道,垂直地穿過所述固持台的至少一個部分,所述多個通風通道佈置在所述固持台的所述寬度方向上,使得所述多個通風通道位於所述多個抽吸通道之間以通過所述多個通風通道釋放所述基底與所述固持台之間的氣體;以及多個基底支撐件,佈置在所述固持台的所述寬度方向上,所述多個基底支撐件升高或降低以允許在所述固持台上載入所述基底以及從所述固持台卸載所述基底。 According to an exemplary embodiment, an apparatus for holding a substrate on a top surface thereof includes: a holding table that is held on a top surface of the holding table; a plurality of suction channels that are vertically worn Passing through at least one portion of the holding table, and the plurality of suction channels are arranged in a width direction of the holding table to support the substrate by using vacuum suction; a plurality of ventilation passages vertically passing through the At least one portion of the holding station, the plurality of ventilation passages being disposed in the width direction of the holding table such that the plurality of ventilation passages are located between the plurality of suction passages to pass the plurality of ventilation passages a channel releases gas between the substrate and the holding table; and a plurality of substrate supports disposed in the width direction of the holding table, the plurality of substrate supports being raised or lowered to allow Loading the substrate on the holding table and unloading the substrate from the holding table.

所述多個抽吸通道的多個部分可以在所述固持台的X方向上延伸,並且在Y方向上彼此間隔開,並且其餘所述多個抽吸 通道可以在所述固持台的Y方向上延伸,並且在所述X方向上彼此間隔開。 A plurality of portions of the plurality of suction passages may extend in the X direction of the holding table and are spaced apart from each other in the Y direction, and the remaining plurality of suctions The passages may extend in the Y direction of the holding table and are spaced apart from each other in the X direction.

在X方向上延伸的抽吸通道與在Y方向上延伸的抽吸通道可以彼此交叉。 The suction passage extending in the X direction and the suction passage extending in the Y direction may cross each other.

所述多個通風通道中的每一者可以界定在所述多個抽吸通道之間,其中所述多個通風通道的多個部分在固持台的X方向上延伸,並且在Y方向上彼此間隔開,而其餘所述多個通風通道在所述固持台的Y方向上延伸,並且在X方向上彼此間隔開。 Each of the plurality of ventilation passages may be defined between the plurality of suction passages, wherein portions of the plurality of ventilation passages extend in the X direction of the holding table and are mutually in the Y direction The plurality of ventilation passages are spaced apart in the Y direction of the holding table and are spaced apart from each other in the X direction.

在X方向上延伸的通風通道與在Y方向上延伸的通風通道可以彼此交叉。 The ventilation passages extending in the X direction and the ventilation passages extending in the Y direction may cross each other.

所述多個基底支撐件中支撐所述基底的邊緣的基底支撐件的高度可以大於支撐所述基底的中心區域的支撐件的高度。 The height of the substrate support supporting the edge of the substrate in the plurality of substrate supports may be greater than the height of the support supporting the central region of the substrate.

所述多個抽吸通道可包含:中心抽吸通道,界定在所述基底的中心區域在上面支撐在所述固持台上的區域中;以及周邊抽吸通道,界定在中心抽吸通道外部的周邊中。 The plurality of suction channels may include: a central suction channel defined in a region on a central portion of the substrate supported on the holding table; and a peripheral suction channel defined outside the central suction channel In the surrounding area.

所述用於固持基底的設備可以進一步包含抽吸控制單元,所述抽吸控制單元連接到所述多個抽吸通道,其中所述抽吸控制單元控制所述抽吸通道,使得從中心抽吸通道到周邊抽吸通道以一時間間隔連續地產生真空吸力。 The apparatus for holding a substrate may further include a suction control unit connected to the plurality of suction passages, wherein the suction control unit controls the suction passage such that the suction passage is drawn from the center The suction passage to the peripheral suction passage continuously generates vacuum suction at a time interval.

100‧‧‧固持台 100‧‧‧Guide

110‧‧‧主體 110‧‧‧ Subject

120‧‧‧支撐板 120‧‧‧Support board

200‧‧‧通風通道 200‧‧‧ ventilation passage

300‧‧‧抽吸通道 300‧‧‧sucking channel

310‧‧‧中心抽吸通道 310‧‧‧Center suction channel

321、322、331、332‧‧‧抽吸通道 321, 322, 331, 332 ‧ ‧ suction channel

400a、400b‧‧‧基底支撐件 400a, 400b‧‧‧ base support

500a、500b‧‧‧傳動部分 500a, 500b‧‧‧ transmission part

600‧‧‧抽吸控制單元 600‧‧‧sucking control unit

610‧‧‧真空泵 610‧‧‧vacuum pump

620‧‧‧儲氣槽 620‧‧‧ gas storage tank

630‧‧‧真空閥 630‧‧‧Vacuum valve

631‧‧‧真空管線 631‧‧‧vacuum pipeline

640‧‧‧氣體閥 640‧‧‧ gas valve

641‧‧‧氣體管線 641‧‧‧ gas pipeline

650‧‧‧連接管線 650‧‧‧Connected pipeline

660‧‧‧中心管線 660‧‧‧Central Pipeline

661‧‧‧第一管線 661‧‧‧First pipeline

662‧‧‧第二管線 662‧‧‧Second pipeline

663‧‧‧第三管線 663‧‧‧ Third pipeline

664‧‧‧第四管線 664‧‧‧fourth pipeline

670‧‧‧中心閥 670‧‧‧ center valve

671‧‧‧第一閥 671‧‧‧First valve

672‧‧‧第二閥 672‧‧‧Second valve

673‧‧‧第三閥 673‧‧‧third valve

674‧‧‧第四閥 674‧‧‧fourth valve

S‧‧‧基底 S‧‧‧ base

通過結合附圖進行的以下描述可以更詳細地理解示範性實施例,其中:圖1和圖2是根據示範性實施例的用於固持基底的設備的三維視圖。 The exemplary embodiments may be understood in more detail by the following description in conjunction with the accompanying drawings in which: FIG. 1 and FIG. 2 are three-dimensional views of an apparatus for holding a substrate, according to an exemplary embodiment.

圖3是沿圖1的A-A’線截取的用於固持基底的設備的橫截面圖。 Figure 3 is a cross-sectional view of the apparatus for holding a substrate taken along line A-A' of Figure 1.

圖4是沿圖1的B-B’線截取的用於固持基底的設備的橫截面圖。 Figure 4 is a cross-sectional view of the apparatus for holding a substrate taken along line B-B' of Figure 1.

圖5至圖8的(b)是說明在基底固持設備上固持基底的過程的視圖。 FIGS. 5 to 8(b) are views illustrating a process of holding a substrate on a substrate holding device.

下文中將參看附圖詳細描述具體實施例。但是,本發明可以用不同形式實施,並且不應被解釋為限於本文所闡述的實施例。實際上,提供這些實施例是為了使得本發明將是徹底並且完整的,並且將把本發明的範圍完整地傳達給所屬領域的技術人員。全文中,相同的參考標號指代相同的元件。 Specific embodiments will be described in detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed to those skilled in the art. Throughout the text, the same reference numerals will be used to refer to the same elements.

圖1和圖2是根據示範性實施例的用於固持基底的設備的三維視圖。這裡,圖1是說明多個基底支撐件升高以從固持台向上突出的狀態的視圖,並且圖2是說明所述多個基底支撐件降低以使得所述多個基底支撐件安置在固持台內部的狀態的視圖。圖3是沿圖1的A-A’線截取的用於固持基底的設備的橫截面 圖,並且圖4是沿圖1的B-B’線截取的用於固持基底的設備的橫截面圖。 1 and 2 are three-dimensional views of an apparatus for holding a substrate, according to an exemplary embodiment. Here, FIG. 1 is a view illustrating a state in which a plurality of substrate supports are raised to protrude upward from a holding table, and FIG. 2 is a view illustrating that the plurality of substrate supports are lowered such that the plurality of substrate supports are placed on a holding table A view of the internal state. Figure 3 is a cross section of the apparatus for holding a substrate taken along line A-A' of Figure 1 Figure 4, and Figure 4 is a cross-sectional view of the apparatus for holding a substrate taken along line B-B' of Figure 1.

根據示範性實施例的用於固持基底設備可以是一種用於固持玻璃基底、具體來說是用於固持大型基底的設備。所述基底固持設備安置在用於處理基底的處理腔室(未圖示)中。舉例來說,其中安置著根據示範性實施例的基底固持設備的處理腔室可以是在其中執行雷射誘導熱成像(laser induced thermal imaging,LITI)的腔室。 The apparatus for holding a substrate according to an exemplary embodiment may be an apparatus for holding a glass substrate, specifically for holding a large substrate. The substrate holding device is disposed in a processing chamber (not shown) for processing the substrate. For example, a processing chamber in which a substrate holding device according to an exemplary embodiment is disposed may be a chamber in which laser induced thermal imaging (LITI) is performed.

參看圖1至圖3,根據示範性實施例的基底固持設備包含:固持台100,具有上面固持著基底的上部部分;多個抽吸通道300,垂直地穿過所述固持台100的至少一個部分以通過使用真空吸力來支撐基底;多個通風通道200,垂直地穿過所述固持台100的至少一個部分以充當釋放基底與固持台100之間的氣體所經過的通路(passage);抽吸控制單元600,連接到所述多個抽吸通道300中的每一者以產生真空吸力;多個基底支撐件400a和400b,佈置在固持台100的寬度方向上,所述多個基底支撐件400a和400b被抬升以支援對基底的負載/卸載;以及多個傳動單元500a和500b,用於抬升所述多個基底支撐件400a和400b。 Referring to FIGS. 1 through 3, a substrate holding device according to an exemplary embodiment includes a holding table 100 having an upper portion on which a substrate is held, and a plurality of suction channels 300 vertically passing through at least one of the holding stations 100 Partially to support the substrate by using vacuum suction; a plurality of ventilation passages 200 vertically passing through at least a portion of the holding table 100 to serve as a passage through which gas between the release substrate and the holding table 100 passes; a suction control unit 600 connected to each of the plurality of suction channels 300 to generate vacuum suction; a plurality of substrate supports 400a and 400b disposed in a width direction of the holding table 100, the plurality of substrate supports The pieces 400a and 400b are raised to support loading/unloading of the substrate; and a plurality of transmission units 500a and 500b for lifting the plurality of substrate supports 400a and 400b.

固持台100可以是用於在其上部部分上安放基底以便支撐基底的單元。固持台100包含主體110和安置在主體110上以支撐基底的支撐板120。這裡,支撐板120的尺寸小於主體110的尺寸,並且支撐板120安置在主體110上。主體110的面積大於 基底的面積。雖然根據示範性實施例的支撐板120具有舉行板形狀,但是本發明不限於此。舉例來說,支撐板120可以製造成對應於基底形狀的多種形狀。 The holding table 100 may be a unit for placing a substrate on an upper portion thereof to support the substrate. The holding stage 100 includes a body 110 and a support plate 120 disposed on the body 110 to support the substrate. Here, the size of the support plate 120 is smaller than the size of the body 110, and the support plate 120 is disposed on the body 110. The area of the main body 110 is larger than The area of the substrate. Although the support plate 120 according to an exemplary embodiment has a holding plate shape, the present invention is not limited thereto. For example, the support plate 120 can be fabricated in a variety of shapes that correspond to the shape of the substrate.

抽吸通道300沿固持台100的兩個寬度方向以線形形狀延伸,由此在固持台100上形成晶格圖案形狀(lattice pattern shape)。具體來說,所述多個抽吸通道300的多個部分在固持台100的X方向上延伸,並且在Y方向上彼此間隔開,如圖1和圖2所說明。其餘所述多個抽吸通道300在固持台100的Y方向上延伸,並且在X方向上彼此間隔開。也就是說,在X方向上延伸的多個抽吸通道300和在Y方向上延伸的多個抽吸通道300的至少多個部分彼此交叉。所述多個抽吸通道300可經配置以填充在支撐板120中。 The suction passage 300 extends in a linear shape along both width directions of the holding stage 100, thereby forming a lattice pattern shape on the holding stage 100. Specifically, portions of the plurality of suction passages 300 extend in the X direction of the holding table 100 and are spaced apart from each other in the Y direction, as illustrated in FIGS. 1 and 2. The remaining plurality of suction passages 300 extend in the Y direction of the holding table 100 and are spaced apart from each other in the X direction. That is, at least a plurality of portions of the plurality of suction channels 300 extending in the X direction and the plurality of suction channels 300 extending in the Y direction cross each other. The plurality of suction channels 300 can be configured to be filled in the support plate 120.

當在固持台100上固持基底時,基底被固持,使得基底從基底的中心區域朝向基底的邊緣區域連續接觸支撐板120。為此,使用稍後將描述的抽吸控制單元600來控制抽吸通道300,使得從在多個抽吸通道300的基底固持區域的中心區域中界定的抽吸通道310朝向在多個抽吸通道300的邊緣區域中界定的抽吸通道321、322、331和332連續地產生真空吸力。 When the substrate is held on the holding table 100, the substrate is held such that the substrate continuously contacts the support plate 120 from the central region of the substrate toward the edge region of the substrate. To this end, the suction channel 300 is controlled using a suction control unit 600, which will be described later, such that the suction channel 310 defined from the central region of the substrate holding region of the plurality of suction channels 300 is oriented toward a plurality of suctions. Suction channels 321, 322, 331, and 332 defined in the edge regions of channel 300 continuously create vacuum suction.

下文中,在多個抽吸通道300的在基底板120的中心區域中界定的抽吸通道稱為“中心抽吸通道310”,並且在中心抽吸通道310的周邊區域中界定的抽吸通道稱為“周邊抽吸通道321、322、331和332”。參看圖3,周邊抽吸通道321、322、331 和332是在中心抽吸通道310的兩個方向上界定的。可以將在中心抽吸通道310的一個方向上界定的周邊抽吸通道321和322中的每一者劃分成多個通道。並且,可以將在中心抽吸通道310的其它方向上界定的周邊抽吸通道331和332中的每一者劃分成多個通道。舉例來說,可以在中心抽吸通道310的一個方向上界定兩個周邊抽吸通道321和322,並且可以在中心抽吸通道310的另一個方向上界定兩個周邊抽吸通道331和332。下文中,在中心抽吸通道310的一個方向上界定的兩個周邊抽吸通道321和322稱為“第一和第二周邊抽吸通道321和322”。這裡,相對鄰近於中心抽吸通道310而界定的抽吸通道稱為第一周邊抽吸通道321,而另一個抽吸通道稱為第二周邊抽吸通道322。並且,在中心抽吸通道310的另一個方向上界定的兩個周邊抽吸通道331和332稱為“第三和第四周邊抽吸通道331和332”。這裡,相對鄰近於中心抽吸通道310而界定的抽吸通道稱為第三周邊抽吸通道331,而另一個抽吸通道稱為第四周邊抽吸通道332。 Hereinafter, a suction channel defined in a central region of the plurality of suction channels 300 in the base plate 120 is referred to as a "central suction channel 310", and a suction channel defined in a peripheral region of the central suction channel 310 It is referred to as "peripheral suction passages 321, 322, 331, and 332". Referring to Figure 3, the peripheral suction channels 321, 322, 331 The sum 332 is defined in both directions of the central suction channel 310. Each of the peripheral suction channels 321 and 322 defined in one direction of the central suction channel 310 may be divided into a plurality of channels. Also, each of the peripheral suction channels 331 and 332 defined in other directions of the central suction channel 310 can be divided into a plurality of channels. For example, two peripheral suction channels 321 and 322 can be defined in one direction of the central suction channel 310, and two peripheral suction channels 331 and 332 can be defined in the other direction of the central suction channel 310. Hereinafter, the two peripheral suction passages 321 and 322 defined in one direction of the center suction passage 310 are referred to as "first and second peripheral suction passages 321 and 322". Here, the suction passage defined adjacent to the central suction passage 310 is referred to as a first peripheral suction passage 321 and the other suction passage is referred to as a second peripheral suction passage 322. Also, the two peripheral suction passages 331 and 332 defined in the other direction of the center suction passage 310 are referred to as "third and fourth peripheral suction passages 331 and 332". Here, the suction passage defined relative to the central suction passage 310 is referred to as a third peripheral suction passage 331 and the other suction passage is referred to as a fourth peripheral suction passage 332.

雖然如下所述,使用抽吸控制單元600從中心抽吸通道310向周邊抽吸通道321、322、331和332連續地提供真空吸力。更具體來說,按照中心抽吸通道310、第一和第三周邊抽吸通道321和331以及第二和第四周邊抽吸通道322和332的次序連續地提供真空吸力。 Although suction control unit 600 is used to continuously supply vacuum suction from the center suction passage 310 to the peripheral suction passages 321, 322, 331, and 332 as described below. More specifically, the vacuum suction is continuously provided in the order of the center suction passage 310, the first and third peripheral suction passages 321 and 331 and the second and fourth peripheral suction passages 322 and 332.

在前述描述中,上文參看說明沿圖1的A-A’線切出的截面的圖3來描述中心抽吸通道310和周邊抽吸通道321、322、 331和332的配置和佈置。雖然未單獨圖示,但是可以在沿垂直於圖1的A-A’線的一條線的橫截面中說明中心抽吸通道310、在中心抽吸通道310的一個方向上界定的第一和第二周邊抽吸通道321和322以及在中心抽吸通道310的另一個方向上界定的第三和第四周邊抽吸通道331和332。 In the foregoing description, the central suction passage 310 and the peripheral suction passages 321, 322 are described above with reference to Fig. 3 illustrating a section cut along the line A-A' of Fig. 1. Configuration and arrangement of 331 and 332. Although not separately illustrated, the central suction channel 310, the first and the first defined in one direction of the central suction channel 310, may be illustrated in a cross section along a line perpendicular to line AA' of FIG. Two peripheral suction channels 321 and 322 and third and fourth peripheral suction channels 331 and 332 defined in the other direction of the central suction channel 310.

在多個抽吸通道300之間界定通風通道200,以沿固持台100的兩個寬度方向以線形形狀延伸,由此在固持台100上形成晶格圖案形狀。更具體來說,如在圖1和圖2中所說明,在抽吸通道300之間界定多個通風通道200中的每一者。這裡,多個通風通道200的多個部分在固持台100的X方向上延伸,並且在Y方向上佈置且彼此間隔開。其餘多個通風通道200在固持台的Y方向上延伸,並且在X方向上佈置且彼此間隔開。也就是說,在X和Y方向上延伸的多個通風通道200的至少多個部分彼此交叉。多個通風通道200可以填充在固持台100的至少支撐板120內,並且可以延伸,使得通風通道的兩個末端都位於固持台100上的支撐板120外部。 The ventilation passage 200 is defined between the plurality of suction passages 300 to extend in a linear shape along both width directions of the holding table 100, thereby forming a lattice pattern shape on the holding table 100. More specifically, as illustrated in FIGS. 1 and 2, each of the plurality of ventilation passages 200 is defined between the suction passages 300. Here, the plurality of portions of the plurality of ventilation passages 200 extend in the X direction of the holding table 100, and are arranged in the Y direction and spaced apart from each other. The remaining plurality of ventilation passages 200 extend in the Y direction of the holding table and are arranged in the X direction and spaced apart from each other. That is, at least portions of the plurality of ventilation passages 200 extending in the X and Y directions cross each other. A plurality of ventilation passages 200 may be filled in at least the support plate 120 of the holding table 100 and may be extended such that both ends of the ventilation passages are located outside the support plate 120 on the holding table 100.

抽吸控制單元600連接到以晶格形狀提供的多個抽吸通道300中的每一者,以允許抽吸通道300從在固持台100的中心區域中界定的抽吸通道300朝向在固持台100的邊緣中界定的抽吸通道300連續產生真空吸力。這裡,在所有方向上從在支撐板120的中心中界定的抽吸通道300連續產生真空吸力。 The suction control unit 600 is coupled to each of the plurality of suction passages 300 provided in a lattice shape to allow the suction passage 300 to be directed from the suction passage 300 defined in the central region of the holding table 100 toward the holding table The suction channel 300 defined in the edge of 100 continuously produces vacuum suction. Here, vacuum suction is continuously generated from the suction passages 300 defined in the center of the support plate 120 in all directions.

下文中,作為一實例,將描述連接到在Y方向上延伸並 且在X方向上佈置且彼此間隔開的多個抽吸通道(參見圖3)的抽吸控制單元600。 Hereinafter, as an example, the description will be made to connect to extend in the Y direction and And a suction control unit 600 of a plurality of suction channels (see FIG. 3) arranged in the X direction and spaced apart from each other.

抽吸控制單元600包含:真空泵610,產生真空吸力;儲氣槽620,儲存氣體以用於在卸載基底時釋放真空;真空管線631,其一個末端連接到真空泵610;氣體管線641,其一個末端連接到儲氣槽620;中心管線660,連接到中心抽吸通道310;第一和第二管線661和662,分別連接到第一和第二周邊抽吸通道321和322;第三和第四管線663和664,分別連接到第三和第四周邊抽吸通道331和332;中心管線660;以及連接管線650,將第一到第四管線661到664連接到真空管線631與氣體管線641之間的管線。並且,抽吸控制單元600包含:真空閥630,安置在真空管線631中以控制連接管線650與真空泵610之間的連通;氣體閥640,安置在氣體管線641中以控制連接管線650與儲氣槽620之間的連通;中心閥670,安置在中心管線660中以控制中心抽吸通道310與連接管線650之間的連通;以及第一到第四閥671到674,分別安置在第一到第四管線661到664中,以控制第一到第四周邊抽吸通道321、322、331和332與連接管線650之間的連通。這裡,可以將儲存在儲氣槽620中的氣體供應到抽吸通道310、321、322、331和332中以幫助卸載基底。這裡,可以使用多種惰性氣體(例如氮氣、氬氣等)或空氣作為所述氣體。 The suction control unit 600 includes a vacuum pump 610 that generates vacuum suction, a gas storage tank 620 that stores gas for releasing the vacuum when the substrate is unloaded, a vacuum line 631 that has one end connected to the vacuum pump 610, and one gas end 641, one end of which Connected to the gas storage tank 620; a central line 660 connected to the central suction passage 310; first and second lines 661 and 662 connected to the first and second peripheral suction passages 321 and 322, respectively; third and fourth Lines 663 and 664 are connected to the third and fourth peripheral suction passages 331 and 332, respectively; a center line 660; and a connection line 650 connecting the first to fourth lines 661 to 664 to the vacuum line 631 and the gas line 641 Pipeline between. Also, the suction control unit 600 includes a vacuum valve 630 disposed in the vacuum line 631 to control communication between the connection line 650 and the vacuum pump 610, and a gas valve 640 disposed in the gas line 641 to control the connection line 650 and the gas storage a communication between the slots 620; a center valve 670 disposed in the center line 660 to control communication between the center suction passage 310 and the connecting line 650; and first to fourth valves 671 to 674, respectively disposed at the first to The fourth lines 661 to 664 control the communication between the first to fourth peripheral suction passages 321, 322, 331, and 332 and the connection line 650. Here, the gas stored in the gas storage tank 620 may be supplied into the suction passages 310, 321, 322, 331, and 332 to help unload the substrate. Here, a plurality of inert gases (for example, nitrogen, argon, etc.) or air may be used as the gas.

當在固持台100上固持基底時,真空泵610操作以打開真空閥630,並且接著相繼打開中心閥670、第一和第三閥671和 673以及第二和第四閥672和674。因而,按照中心抽吸通道310、第一和第三周邊抽吸通道321和331以及第二和第四周邊抽吸通道322和332的次序產生吸力以便允許基底從基底的中心區域到基底的邊緣區域連續接觸或連續緊密地附接到固持台100的頂面。並且,因為基底從中心區域到邊緣區域連續緊密地附接到固持台100的頂面,所以基底與固持台100之間剩餘的氣體(即空氣)通過通風通道200釋放。這裡,因為基底從中心區域到邊緣區域連續緊密地附接到固持台100,所以空氣從在支撐板120的中心中界定的通風通道200流動到在支撐板120的邊緣中界定的通風通道200,並且接著釋放到支撐板120的外部。因而,因為當在固持台100上固持基底時自然地釋放空氣,所以基底無需被提升就可以緊密地附接和固定到固持台100。 When the substrate is held on the holding table 100, the vacuum pump 610 operates to open the vacuum valve 630, and then successively opens the center valve 670, the first and third valves 671, and 673 and second and fourth valves 672 and 674. Thus, suction is generated in the order of the central suction channel 310, the first and third peripheral suction channels 321 and 331 and the second and fourth peripheral suction channels 322 and 332 to allow the substrate to pass from the central region of the substrate to the edge of the substrate. The region is continuously contacted or continuously attached tightly to the top surface of the holding table 100. Also, since the substrate is continuously and tightly attached to the top surface of the holding table 100 from the center region to the edge region, the gas remaining between the substrate and the holding table 100 (i.e., air) is released through the venting passage 200. Here, since the substrate is continuously and tightly attached to the holding table 100 from the central region to the edge region, air flows from the ventilation passage 200 defined in the center of the support plate 120 to the ventilation passage 200 defined in the edge of the support plate 120, And then released to the outside of the support plate 120. Thus, since the air is naturally released when the substrate is held on the holding table 100, the substrate can be closely attached and fixed to the holding table 100 without being lifted.

基底支撐件400a和400b在固持台上固持基底,或者將所固持的基底與固持台100分開。基底支撐件400a和400b中的每一者具有桿形狀以垂直地穿過固持台100並且提供多個基底支撐件。舉例來說,如圖1中所說明,基底支撐件400a和400b包含在X方向上佈置在固持台100的支撐板120的邊緣外部的多個第一基底支撐件400b,和安置在支撐板120內部並且在X方向上佈置的多個第二基底支撐件400a。這裡,第一基底支撐件400b分別在X方向上安置在支撐板120的兩個邊緣外部以面向彼此。也就是說,第一基底支撐件400b安置成兩行以面向彼此。與第一基底支撐件400b一樣,第二基底支撐件400a也安置成兩行,並且 因而第二基底支撐件400a安置在安置成兩行的第一基底支撐件400b之間。第一基底支撐件400b中的每一者的頂部末端位於比第二基底支撐件400a中的每一者的頂部末端的位置更高的位置處。因而,當參看圖1從Y方向觀看多個基底支撐件400a和400b時,兩個第二基底支撐件400a(其各自具有高度相對較低的頂部末端)安置在兩個第一基底支撐件400b(其各自具有高度相對較高的頂部末端)之間。參看圖4,支撐基底的邊緣的第一基底支撐件400b的頂部末端位於比支撐基底的中心的第二基底支撐件400a的頂部末端的高度更高的高度處。考慮到因為大型基底的自身的重量引起的下垂所產生的高度差,界定第一基底支撐件400b和第二基底支撐件400a的高度差。 The substrate supports 400a and 400b hold the substrate on the holding table or separate the held substrate from the holding table 100. Each of the substrate supports 400a and 400b has a rod shape to pass vertically through the holding table 100 and provide a plurality of substrate supports. For example, as illustrated in FIG. 1 , the substrate supports 400 a and 400 b include a plurality of first substrate supports 400 b disposed outside the edges of the support plates 120 of the holding table 100 in the X direction, and are disposed on the support plate 120 A plurality of second substrate supports 400a disposed inside and in the X direction. Here, the first substrate supports 400b are respectively disposed outside the two edges of the support plate 120 in the X direction to face each other. That is, the first substrate supports 400b are disposed in two rows to face each other. Like the first substrate support 400b, the second substrate support 400a is also disposed in two rows, and Thus the second substrate support 400a is disposed between the first substrate supports 400b disposed in two rows. The top ends of each of the first substrate supports 400b are located at a higher position than the top end of each of the second substrate supports 400a. Thus, when viewing a plurality of substrate supports 400a and 400b from the Y direction with reference to Figure 1, two second substrate supports 400a (each having a relatively lower top end) are disposed on the two first substrate supports 400b Between (each having a relatively high top end). Referring to FIG. 4, the top end of the first substrate support 400b supporting the edge of the substrate is located at a height higher than the height of the top end of the second substrate support 400a at the center of the support substrate. The height difference between the first substrate support 400b and the second substrate support 400a is defined in consideration of the height difference due to the sag caused by the weight of the large substrate itself.

傳動部分500a和500b用於抬升多個基底支撐件400a和400b中的每一者,並且提供多個傳動部分。傳動部分500a和500b的數目可以對應於多個基底支撐件400a和400b的數目,從而抬升基底支撐件中的每一者。本發明不限於傳動部分的所述數目。舉例來說,傳動部分的數目可以小於多個基底支撐件400a和400b的數目,從而同時抬升佈置在相同線上的多個基底支撐件。當然,可以提供一個傳動部分以一次抬升多個基底支撐件400a和400b。 The transmission portions 500a and 500b are used to lift each of the plurality of substrate supports 400a and 400b and provide a plurality of transmission portions. The number of transmission portions 500a and 500b may correspond to the number of the plurality of substrate supports 400a and 400b to lift each of the substrate supports. The invention is not limited to the stated number of transmission parts. For example, the number of transmission portions may be less than the number of the plurality of substrate supports 400a and 400b, thereby simultaneously lifting a plurality of substrate supports disposed on the same line. Of course, a transmission portion can be provided to lift the plurality of substrate supports 400a and 400b at a time.

雖然根據實施例的傳動部分500a和500b中的每一者為汽缸,但是本發明不限於此。舉例來說,傳動部分可包含能夠使基底支撐件400a和400b垂直地往復運動的各種單元,舉例來說,包含電機的單元。 Although each of the transmission portions 500a and 500b according to the embodiment is a cylinder, the present invention is not limited thereto. For example, the transmission portion can include various units that can cause the substrate supports 400a and 400b to reciprocate vertically, for example, a unit that includes a motor.

圖5至圖8的(b)是說明在基底固持設備上固持基底的過程的視圖。 FIGS. 5 to 8(b) are views illustrating a process of holding a substrate on a substrate holding device.

下文中,將參看圖1至圖8的(b)描述在基底固持設備上固持基底的過程,並且還將簡單地描述或省略重複的描述。 Hereinafter, a process of holding a substrate on a substrate holding device will be described with reference to FIGS. 1 to 8(b), and a repetitive description will be simply described or omitted.

根據示範性實施例的一種使用基底固持設備來固持基底的方法包含:在固持台100上方的對應位置處定位基底S的過程;提升多個基底支撐件400a和400b以允許在基底支撐件400a和400b上支撐基底S的過程;允許多個基底支撐件400a和400b降低的過程;以及從在支撐板120的中心區域中界定的抽吸通道310到在支撐板120的邊緣中界定的抽吸通道321、322、331和332連續產生真空吸力以便在支撐板120上緊密地附接基底S的過程。 A method of holding a substrate using a substrate holding device according to an exemplary embodiment includes: a process of positioning a substrate S at a corresponding position above the holding table 100; lifting a plurality of substrate supports 400a and 400b to allow the substrate support 400a and The process of supporting the substrate S on 400b; the process of allowing the plurality of substrate supports 400a and 400b to be lowered; and the suction channel defined in the central region of the support plate 120 to the suction channel defined in the edge of the support plate 120 321 , 322 , 331 , and 332 continuously generate vacuum suction to closely attach the substrate S to the support plate 120 .

下文中,將詳細描述固持基底的方法。 Hereinafter, a method of holding a substrate will be described in detail.

首先,使用臂將基底S(舉例來說,玻璃基底)定位在固持台100上提供的支撐板120上方的對應位置處。傳動部分500a和500b操作以提升多個基底支撐件400a和400b,使得多個基底支撐件400a和400b從固持台100向上突出,以允許多個基底支撐件400a和400b的頂部末端接觸基底S的底面,如圖6中所說明。這裡,因為第一基底支撐件400b的頂部末端位於比第二基底支撐件400a的頂部末端的高度更高的高度處,所以基底S的邊緣區域支撐在比基底的中心區域的位置更高的位置處。因而,基底的中心區域下垂。 First, the substrate S (for example, a glass substrate) is positioned at a corresponding position above the support plate 120 provided on the holding table 100 using an arm. The transmission portions 500a and 500b operate to lift the plurality of substrate supports 400a and 400b such that the plurality of substrate supports 400a and 400b protrude upward from the holding table 100 to allow the top ends of the plurality of substrate supports 400a and 400b to contact the substrate S The bottom surface is as illustrated in FIG. 6. Here, since the top end of the first substrate support 400b is located at a higher height than the height of the top end of the second substrate support 400a, the edge region of the substrate S is supported at a position higher than the position of the central region of the substrate. At the office. Thus, the central area of the substrate hangs down.

接著,傳動部分500a和500b操作以允許多個基底支撐 件400a和400b降低,由此在支撐板120上固持基底S的底面。這裡,由於第一和第二基底支撐件400b和400a之間的高度差,基底S的底面的中心區域首先接觸支撐板120,並且接著基底S的底面從中心區域朝向邊緣連續接觸支撐板120,如圖7的(a)和圖7的(b)中所說明。因而,支撐板120的整個頂面與基底S的底面接觸,如圖8的(a)和圖8的(b)中所說明。通過傳動部分500a和500b降低基底支撐件400a和400b使基底S的底面與固持台100的頂面貼合。 Then, the transmission portions 500a and 500b operate to allow a plurality of substrate supports The pieces 400a and 400b are lowered, thereby holding the bottom surface of the substrate S on the support plate 120. Here, due to the difference in height between the first and second substrate supports 400b and 400a, the central region of the bottom surface of the substrate S first contacts the support plate 120, and then the bottom surface of the substrate S continuously contacts the support plate 120 from the central region toward the edge, This is illustrated in (a) of FIG. 7 and (b) of FIG. 7. Thus, the entire top surface of the support plate 120 is in contact with the bottom surface of the substrate S as illustrated in (a) of FIG. 8 and (b) of FIG. The base supports 400a and 400b are lowered by the transmission portions 500a and 500b such that the bottom surface of the substrate S is fitted to the top surface of the holding table 100.

如上所述,當基底S的底面從中心區域到邊緣區域連續接觸支撐板120時,抽吸控制單元600允許抽吸通道300連續產生真空吸力,由此將基底S緊密附接到支撐板120上。 As described above, when the bottom surface of the substrate S continuously contacts the support plate 120 from the central region to the edge region, the suction control unit 600 allows the suction passage 300 to continuously generate vacuum suction, thereby closely attaching the substrate S to the support plate 120. .

下文中,將參看圖3詳細描述使用抽吸通道緊密附接基底的過程。 Hereinafter, a process of closely attaching a substrate using a suction channel will be described in detail with reference to FIG.

當基底S的底面的中心區域接觸支撐板120的頂面時,中心閥670打開以允許中心抽吸通道310產生真空吸力。這裡,由於中心抽吸通道310中的真空吸力,基底S的底面緊密附接到支撐板的頂面。 When the central area of the bottom surface of the substrate S contacts the top surface of the support plate 120, the center valve 670 opens to allow the central suction passage 310 to generate vacuum suction. Here, due to the vacuum suction in the central suction passage 310, the bottom surface of the substrate S is closely attached to the top surface of the support plate.

接著,基底S的底面從基底S的底面的中心區域到邊緣區域連續接觸支撐板120。這裡,向在對應於閥區域的區域中界定的周邊抽吸通道321、322、331和332提供真空吸力。舉例來說,參看圖3,打開第一和第三閥671和673以將真空吸力提供到相對靠近中心抽吸通道310的第一和第三周邊抽吸通道321和331中,並且接著以預定時間間隔打開第二和第四閥672和674以將真空吸力提供到第二和第四周邊抽吸通道322和332中。因而,基底S 的底面從基底S的中心區域到邊緣區域連續地緊密附接到支撐板的頂面。 Next, the bottom surface of the substrate S continuously contacts the support plate 120 from the central region to the edge region of the bottom surface of the substrate S. Here, vacuum suction is provided to the peripheral suction passages 321, 322, 331, and 332 defined in the region corresponding to the valve region. For example, referring to FIG. 3, the first and third valves 671 and 673 are opened to provide vacuum suction into the first and third peripheral suction passages 321 and 331 relatively close to the center suction passage 310, and then to be predetermined The time intervals open the second and fourth valves 672 and 674 to provide vacuum suction into the second and fourth peripheral suction channels 322 and 332. Thus, the substrate S The bottom surface is continuously and tightly attached from the central portion of the substrate S to the edge region to the top surface of the support plate.

如上所述,因為基底S的底面連續地緊密附接到固持台100的頂面,所以基底S與支撐板120之間剩餘的氣體(即,空氣)通過通風通道200釋放。這裡,因為基底S從中心區域到邊緣區域連續附接到固持台100,所以空氣從在支撐板120的中心中界定的通風通道200流動到在支撐板120的邊緣中界定的通風通道200,並且接著釋放到支撐板120的外部。因而,因為當在固持台上固持基底S時自然地釋放空氣,所以基底無需被提升就可以緊密地附接和固定到支撐板。 As described above, since the bottom surface of the substrate S is continuously closely attached to the top surface of the holding stage 100, the gas remaining between the substrate S and the support plate 120 (i.e., air) is released through the ventilation passage 200. Here, since the substrate S is continuously attached to the holding stage 100 from the central area to the edge area, air flows from the ventilation passage 200 defined in the center of the support plate 120 to the ventilation passage 200 defined in the edge of the support plate 120, and It is then released to the outside of the support plate 120. Thus, since the air is naturally released when the substrate S is held on the holding table, the substrate can be closely attached and fixed to the support plate without being lifted.

在前述描述中,基底可以在支撐板120的一個方向上從中心區域到邊緣區域連續地緊密附接到支撐板120上,並且在支撐板120的另一個方向上連續地緊密附接到邊緣區域上,如圖3中所說明。然而,雖然未單獨描述,但是可以在所有方向上從在支撐板120的中心區域中界定的抽吸通道到支撐板120的邊緣連續產生真空吸力以便將基底緊密附著到支撐板120。 In the foregoing description, the substrate may be continuously and tightly attached to the support plate 120 from the central region to the edge region in one direction of the support plate 120, and continuously attached to the edge region continuously in the other direction of the support plate 120. Above, as illustrated in Figure 3. However, although not separately described, vacuum suction may be continuously generated from the suction passage defined in the central region of the support plate 120 to the edge of the support plate 120 in all directions to closely attach the substrate to the support plate 120.

如上所述,基底固持設備從基底S的底面的中心區域朝向邊緣區域將基底S的底部連續地緊密附接到固持台100上。因而,基底固持設備可以防止當在固持台100上固持大型基底S時大型基底S由於其自身的重量而發生滑動。因此,基底固持設備可以使基底S的未對準最小化,縮短處理時間並且使設施穩定。 As described above, the substrate holding device continuously and closely attaches the bottom of the substrate S to the holding stage 100 from the central region of the bottom surface of the substrate S toward the edge region. Thus, the substrate holding device can prevent the large substrate S from slipping due to its own weight when the large substrate S is held on the holding table 100. Therefore, the substrate holding device can minimize misalignment of the substrate S, shorten processing time, and stabilize the facility.

根據本發明的實施例,基底固持設備從基底S的底面的 中心區域朝向邊緣區域將基底S的底部連續地緊密附接到固持台100上。因而,基底固持設備可以防止當在固持台100上固持大型基底S時大型基底S由於其自身的重量而發生滑動。因此,基底固持設備可以防止基底未對準,並且縮短處理時間,因為不必要重新對準基底。 According to an embodiment of the invention, the substrate holding device is from the bottom surface of the substrate S The central region faces the edge region continuously and tightly attaches the bottom of the substrate S to the holding table 100. Thus, the substrate holding device can prevent the large substrate S from slipping due to its own weight when the large substrate S is held on the holding table 100. Therefore, the substrate holding device can prevent the substrate from being misaligned and shorten the processing time because it is not necessary to realign the substrate.

雖然本發明基底固持設備已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the substrate holding device of the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some changes without departing from the spirit and scope of the present invention. The scope of protection of the present invention is defined by the scope of the appended claims.

100‧‧‧固持台 100‧‧‧Guide

110‧‧‧主體 110‧‧‧ Subject

120‧‧‧支撐板 120‧‧‧Support board

200‧‧‧通風通道 200‧‧‧ ventilation passage

300‧‧‧抽吸通道 300‧‧‧sucking channel

Claims (7)

一種用於固持基底的設備,所述設備包括:固持台,包含支撐板,所述支撐板用於將所述基底固持在所述固持台的頂面上;多個抽吸通道,垂直地穿過所述固持台的至少一個部分,並且所述多個抽吸通道佈置在所述固持台的寬度方向上以通過使用真空吸力來支撐所述基底;多個通風通道,所述多個通風通道中的每一個在垂直方向上局部地定義於所述固持台中,且在所述固持台的寬度方向上延伸,其中所述通風通道具有延伸以位於所述固持台上的所述支撐板外部的兩端,使得所述基底與所述固持台之間的氣體以所述支撐板的寬度方向釋放至外部;以及多個基底支撐件,佈置在所述固持台的所述寬度方向上,所述多個基底支撐件升高或降低以允許在所述固持台上載入所述基底以及從所述固持台卸載所述基底,其中所述多個通風通道佈置在所述固持台的所述寬度方向上,使得所述多個通風通道位於所述多個抽吸通道之間,其中提升多個所述基底支撐件,以使多個所述基底支撐件中的支撐所述基底的邊緣的所述基底支撐件的高度高於支撐所述基底的中心區域的所述支撐件的高度。 An apparatus for holding a substrate, the apparatus comprising: a holding table comprising a support plate for holding the substrate on a top surface of the holding table; a plurality of suction channels, vertically penetrating Passing at least one portion of the holding table, and the plurality of suction channels are arranged in a width direction of the holding table to support the substrate by using vacuum suction; a plurality of ventilation channels, the plurality of ventilation channels Each of the plurality is vertically defined in the holding table and extends in a width direction of the holding table, wherein the ventilation passage has an extension to be external to the support plate on the holding table Both ends such that gas between the substrate and the holding stage is released to the outside in the width direction of the support plate; and a plurality of substrate supports disposed in the width direction of the holding table, A plurality of substrate supports are raised or lowered to allow loading and unloading the substrate from the holding table, wherein the plurality of ventilation channels are disposed at the holding table In the width direction, the plurality of ventilation channels are located between the plurality of suction channels, wherein a plurality of the substrate supports are lifted to support an edge of the substrate in a plurality of the substrate supports The height of the substrate support is higher than the height of the support supporting the central region of the substrate. 如申請專利範圍第1項所述的設備,其中所述多個抽吸通道的多個部分在所述固持台的X方向上延伸,並且在Y方向上彼 此間隔開,並且其餘所述多個抽吸通道在所述固持台的所述Y方向上延伸,並且在所述X方向上彼此間隔開。 The apparatus of claim 1, wherein the plurality of portions of the plurality of suction passages extend in the X direction of the holding table, and in the Y direction This is spaced apart, and the remaining plurality of suction channels extend in the Y direction of the holding table and are spaced apart from each other in the X direction. 如申請專利範圍第2項所述的設備,其中在所述X方向上延伸的所述抽吸通道與在所述Y方向上延伸的所述抽吸通道彼此交叉。 The apparatus of claim 2, wherein the suction passage extending in the X direction and the suction passage extending in the Y direction cross each other. 如申請專利範圍第2項所述的設備,其中所述多個通風通道中的每一者是在所述多個抽吸通道之間界定的,其中所述多個通風通道的多個部分在所述固持台的所述X方向上延伸,並且在所述Y方向上彼此間隔開,並且其餘所述多個通風通道在所述固持台的所述Y方向上延伸,並且在所述X方向上彼此間隔開。 The apparatus of claim 2, wherein each of the plurality of ventilation channels is defined between the plurality of suction channels, wherein portions of the plurality of ventilation channels are The X-direction of the holding table extends and is spaced apart from each other in the Y direction, and the remaining plurality of ventilation channels extend in the Y direction of the holding table, and in the X direction They are spaced apart from each other. 如申請專利範圍第4項所述的設備,其中在所述X方向上延伸的所述通風通道與在所述Y方向上延伸的所述通風通道彼此交叉。 The apparatus of claim 4, wherein the ventilation passage extending in the X direction and the ventilation passage extending in the Y direction cross each other. 如申請專利範圍第1項所述的設備,其中所述多個抽吸通道包括:中心抽吸通道,界定在一個區域中,所述基底的中心區域在所述區域上面被支撐在所述固持台上;以及周邊抽吸通道,界定在所述中心抽吸通道外部的周邊中。 The apparatus of claim 1, wherein the plurality of suction channels comprise: a central suction channel defined in a region, a central region of the substrate being supported above the region at the retention And a peripheral suction channel defined in a periphery of the exterior of the central suction channel. 如申請專利範圍第6項所述的設備,進一步包括連接到所述多個抽吸通道的抽吸控制單元,其中所述抽吸控制單元控制所述抽吸通道,使得從所述中心 抽吸通道到所述周邊抽吸通道以一時間間隔連續產生所述真空吸力。 The apparatus of claim 6, further comprising a suction control unit coupled to the plurality of suction channels, wherein the suction control unit controls the suction channel such that from the center The suction channel to the peripheral suction channel continuously produces the vacuum suction at a time interval.
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