201243994 41897pif 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種基底夾盤單元、一種包含所述基底夾 盤早元的基底處理裝置，以及一種基底轉移方法，其促進 基底的固持。 【先前技術】 當製造典型的有機發光裝置（OLED)面板時，使用 相對厚的玻璃基底。此類玻璃基底由玻璃基底载體固持和 轉移’所述玻璃基底載體通常用於LCD面板製造過程中。 最近’正積極研究製造包含例如膜或薄片型基底等的薄板 型基底的柔性OLED面板的方法。然而，典型玻璃基底載 體不適於固持薄板型基底。在此情況下，可能難以將薄板 型基底維持在平坦狀態。此外，當在不平坦狀態下處理薄 板型基底時’可能難以穩定地製造柔性〇LED面板，且 OLED面板的品質可能降級。 【發明内容】 本發明提供一種基底夾盤單元、一種包含所述基底夾 盤單元的基底處理裝置，以及一種基底轉移方法，其促進 基底的固持。 〃 本發明還提供一種基底夾盤單元、一種包含所述基底 夾盤單元的基底處理裝置，以及一種基底轉移方法，其促 進柔性薄板型基底的固持。 本發明還提供一種基底夾盤單元、一種包含所述基底 夾盤單it的基底處縣置，錢—種基底轉移方法，其防 201243994,pif 止當將基底放置在載體上或從其移除表面時基底滑脫。 本發明還提供一種基底夾盤單元、一種包含所述基底 夾盤單元的基底處理裝置’以及—齡底轉财法，其促 進即使在真空條件下基底的固持。 根據一不範性實施例，一種基底夾盤單元包含：載 體’其包含平坦主體和所述主體的側表面上的紐夹盤， 且將基底粘附到粘性夹盤的側表面；以及提升杆，其在通 過吸附力㈣基底的同時垂直雜，⑽基底放置在枯性 夾盤的侧表面上或從粘性夾盤移除基底。 載體的主體可具備第一穿孔，且枯性夾盤可具備 一穿孔連通的第二穿孔。 ' 提升杆可具有内部空間和與所述内部空間連通的開 放端’且使職空韻力將基底__述職端，且提 升杆可垂直移動穿過主體的第—穿孔和紐夾盤的第二穿 孔。 基底夾盤單元可進一步包含緊密接觸部件，盆使基底 與用以ϋ縣底的祕錢緊密接觸， 觸 部件包含以下部件中的-者：真空吸附部件，其 吸附力使基底她性錄觸；旋轉料， ^旋轉以產线基底與載«簡觸的壓力；按壓部^ :具基底的上側按壓基底；以及氣體注射部 件〃將亂體/主射到基底的上部部分。 且備：緊含真空吸附部件時，載體的主體可 八備弟-孔’且雜夾盤可具備與第—孔連通的第二孔； 201243994 41897pif 且真空吸附部件可連接到第一孔。 多個第一孔和用以將第一孔彼此連接的具有線形狀 的連接凹座可安置在載體的主體上，且粘性夾盤的第二孔 可與連接凹座連通。 根據另一示範性實施例’ 一種基底處理裝置包含：夾 盤模組，其包含：載體，所述載體包含平坦主體和所述主 體的侧表面上的粘性夾盤；以及提升杆，所述提升杆在通 過吸附力固持基底的同時垂直移動，以將基底放置在粘性 夾盤的側表面上或從粘性夾盤移除基底；多個處理腔室， 其連接到所述夾盤模組以處理基底；以及移動模組，其將 固持基底的载體移動到處理腔室。 载體的主體可具備第一穿孔，且粘性夾盤可具備與第 一穿孔連通的第二穿孔；且提升杆可垂直移動穿過所述第 一穿孔和所述第二穿孔。 基底處理裝置可進一步包含緊密接觸部件，其使基底 與用以固持基底的粘性夾盤緊密接觸，其中所述緊密接觸 部件包含以下部件中的一者：真空吸附部件，其使用真空 吸附力使基底與粘性夹盤緊密接觸；旋轉部件，其在基底 上旋轉以產生使基底與載體緊密接觸的壓力；按壓部件， 其具有板形狀以從基底的上側按壓基底；以及氣體注射部 件，其將氣體注射到基底的上部部分。 當移動基底時，基底可由載體固持使得基底的處理目 標表面向地面定向。 移動模組可將固持基底的載體移動到處理腔室；且當201243994 41897pif VI. Description of the Invention: [Technical Field] The present invention relates to a substrate chuck unit, a substrate processing apparatus including the substrate chuck, and a substrate transfer method which promotes substrate holding. [Prior Art] When a typical organic light-emitting device (OLED) panel is manufactured, a relatively thick glass substrate is used. Such glass substrates are held and transferred by a glass substrate carrier. The glass substrate carrier is typically used in LCD panel manufacturing processes. Recently, a method of manufacturing a flexible OLED panel including a thin plate type substrate such as a film or sheet type substrate has been actively researched. However, typical glass substrate carriers are not suitable for holding a thin plate type substrate. In this case, it may be difficult to maintain the thin plate type substrate in a flat state. Further, when the thin-plate type substrate is processed in an uneven state, it may be difficult to stably manufacture the flexible 〇LED panel, and the quality of the OLED panel may be degraded. SUMMARY OF THE INVENTION The present invention provides a substrate chuck unit, a substrate processing apparatus including the substrate chuck unit, and a substrate transfer method that promotes substrate holding. The present invention also provides a substrate chuck unit, a substrate processing apparatus including the substrate chuck unit, and a substrate transfer method for promoting the holding of the flexible sheet type substrate. The present invention also provides a substrate chuck unit, a substrate containing the base chuck single unit, and a money-based substrate transfer method, which is protected against 201243994, and the pif is used to place or remove the substrate on the carrier. The substrate slips off when the surface is on. The present invention also provides a substrate chuck unit, a substrate processing apparatus comprising the substrate chuck unit, and an age-forwarding method for promoting substrate holding even under vacuum conditions. According to an exemplary embodiment, a substrate chuck unit includes: a carrier that includes a flat body and a button on a side surface of the body, and adheres the substrate to a side surface of the adhesive chuck; and a lift bar It is vertically miscellaneous while passing through the substrate of the adsorption force (iv), and (10) the substrate is placed on the side surface of the dry chuck or the substrate is removed from the adhesive chuck. The body of the carrier may be provided with a first perforation, and the dry chuck may be provided with a second perforation communicating with a perforation. 'The lifting rod can have an internal space and an open end that communicates with the internal space' and allows the duty to move the base __ the description end, and the lifting rod can be vertically moved through the first perforation of the main body and the first clamping plate Two perforations. The base chuck unit may further comprise a close contact member, the basin bringing the substrate into close contact with the secret money for the bottom of the county, the contact member comprising: a vacuum adsorbing member whose adsorption force causes the substrate to be recorded; The rotating material, ^ is rotated to produce the line substrate and the pressure of the simple touch; the pressing portion ^: the upper side of the substrate is pressed against the substrate; and the gas injection member 〃 will scatter the body/main portion to the upper portion of the substrate. And: when the vacuum adsorption component is tightly contained, the main body of the carrier may be provided with a second hole and the hybrid chuck may have a second hole communicating with the first hole; 201243994 41897pif and the vacuum adsorption member may be connected to the first hole. A plurality of first holes and a wire-shaped connecting recess for connecting the first holes to each other may be disposed on the body of the carrier, and the second holes of the adhesive chuck may be in communication with the connecting recess. According to another exemplary embodiment, a substrate processing apparatus includes: a chuck module including: a carrier including a flat body and an adhesive chuck on a side surface of the body; and a lifting lever, the lifting The rod moves vertically while holding the substrate by the adsorption force to place the substrate on or remove the substrate from the adhesive chuck; a plurality of processing chambers connected to the chuck module for processing a substrate; and a moving module that moves the carrier holding the substrate to the processing chamber. The body of the carrier can be provided with a first perforation, and the adhesive chuck can be provided with a second perforation in communication with the first perforation; and the lifting bar can be moved vertically through the first perforation and the second perforation. The substrate processing apparatus may further comprise a close contact member that intimately contacts the substrate with an adhesive chuck for holding the substrate, wherein the close contact member comprises one of: a vacuum adsorption member that uses vacuum suction force to cause the substrate In close contact with the viscous chuck; a rotating member that rotates on the substrate to generate a pressure that brings the substrate into close contact with the carrier; a pressing member that has a plate shape to press the substrate from the upper side of the substrate; and a gas injection member that injects the gas Go to the upper part of the base. When the substrate is moved, the substrate can be held by the carrier such that the processing target surface of the substrate is oriented toward the ground. The moving module can move the carrier holding the substrate to the processing chamber;
S 201243994 if 目標表面 移動基底時，基底可由載體固持使得基底的處理 向移動模組定向。 根據另一示範性實施例，一種基底轉移方法包含··使 基底與載體的側部部分間隔開；將提升杆移動】 提升杆的-端支撐基底；在提升杆内形成真空以^過吸: 力將基底附接到提升杆；將基底所附接到的提升杆移動到 載體處以將基底放置在載體的側表面上；以及在工蓺流程 方向上轉移固持基底的載體。 王 所述基底轉移方法可進-步包含使基底與用以固持 基底的載體_表面緊密接觸，其中所述對基底進行的動 作包WF操作中的-者··使用通過在載體的孔内形成真 空而產生的真空吸附力；在基底上使旋轉部件旋轉；使用 具有板形狀的觀部件從基底的上側按遵基底；以及將氣 體注射到基底的上部部分。 粘性夾盤可將粘性提供到载體的側部部分；且基底可 緊密接觸賴的絲面，借此祕將基餘_祕爽盤。 所述基底可包含柔性膜或薄片。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例’並配合所關式作詳細說明如下。 【實施方式】 下文中，將參看附圖詳細描述特定實施例。然而，本 ，明可以柯形式體現且残解釋植於本文陳述的實施 二事實上’提供适些實施例使得本發明將為詳盡且完整 、且將把本發明的翻完全傳達給所屬領賴技術人員。 201243994 41897pif 圖1是說明根據一示範性實施例的基底處理裝置的框 圖。圖2疋说明根據當前實施例的包含載體和夾盤模組的 基底夾盤單元的透視圖。圖3是沿著圖2的線A-A，截取的 橫截面圖。圖4是說明根據當前實施例的載體的透視圖。 圖5是說明根據當前實施例的載體的主體的透視圖。圖6 疋说明根據當前實施例的載體的枯性夾盤的透視圖。 參看圖1和2’根據當前實施例的基底處理裝置包含： 基底夾盤單元1000’其用於支撐基底S且將基底s固定到 載體200 ’即固持基底s以便轉移基底s ;處理腔室3〇〇〇， 其用於處理基底S ;第一緩衝腔室2000，其安置在基底夾 盤單元1000的一側與處理腔室3000的一側之間；以及第 二緩衝腔室4000，其安置在基底夾盤單元1〇⑻的另一侧 與處理腔室3000的另一側之間。此外，基底處理裝置包 含·第一閘門G1，其控制基底夾盤單元1〇〇〇與第一緩衝 腔室2000之間的連通；第二閘門G2，其控制第一緩衝腔 至2000與處理腔室3〇〇〇之間的連通；第三閘門G3，其控 制處理腔室3000與第二緩衝腔室4000之間的連通；以及 第四閘門G4，其控制第二緩衝腔室4〇〇〇與基底夾盤單元 1〇〇〇之間的連通。此外，基底處理裝置包含移動模組（未 圖示），其將基底夾盤單元1000、第一緩衝腔室2〇〇〇、處 理腔室3000和第二緩衝腔室4000彼此連接以移動固持基 底S的載體200。 例如膜或薄片等的薄板型基底可用作基底S。然而， 基底s不限於此，且因此，玻璃基底或晶片可用作基底s。S 201243994 if target surface When moving the substrate, the substrate can be held by the carrier such that the processing of the substrate is oriented toward the moving module. In accordance with another exemplary embodiment, a substrate transfer method includes: spacing a substrate from a side portion of the carrier; moving the lift bar] the end of the lift bar supports the substrate; forming a vacuum within the lift bar to: The force attaches the substrate to the lift bar; moves the lift bar to which the substrate is attached to the carrier to place the substrate on the side surface of the carrier; and transfers the carrier holding the substrate in the direction of the process flow. The substrate transfer method may further comprise contacting the substrate with a surface of the carrier to hold the substrate, wherein the action of the substrate is performed in a WF operation by using a hole formed in the carrier Vacuum suction force generated by vacuum; rotating the rotating member on the substrate; using a viewing member having a plate shape to press the substrate from the upper side of the substrate; and injecting gas into the upper portion of the substrate. The viscous chuck provides tack to the side portions of the carrier; and the substrate can be in intimate contact with the surface of the lining, thereby providing a clear scent. The substrate can comprise a flexible film or sheet. In order to make the above features and advantages of the present invention more comprehensible, the following detailed description of the embodiments of the present invention will be described in detail below. [Embodiment] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. However, the present invention may be embodied in the form of the present invention and the invention is described in the context of the present invention. In fact, the present invention will be described in a comprehensive and complete manner, and the present invention will be fully conveyed to the technology of the invention. personnel. 201243994 41897pif FIG. 1 is a block diagram illustrating a substrate processing apparatus in accordance with an exemplary embodiment. Figure 2A illustrates a perspective view of a substrate chuck unit including a carrier and a chuck module in accordance with the current embodiment. Figure 3 is a cross-sectional view taken along line A-A of Figure 2 . Figure 4 is a perspective view illustrating a carrier according to the current embodiment. Figure 5 is a perspective view illustrating a main body of a carrier according to the current embodiment. Figure 6 is a perspective view showing the dry chuck of the carrier according to the current embodiment. 1 and 2', a substrate processing apparatus according to the current embodiment includes: a substrate chuck unit 1000' for supporting a substrate S and fixing a substrate s to a carrier 200', that is, a holding substrate s for transferring a substrate s; a processing chamber 3 〇〇〇, which is used to process the substrate S; a first buffer chamber 2000 disposed between one side of the substrate chuck unit 1000 and one side of the processing chamber 3000; and a second buffer chamber 4000, which is disposed Between the other side of the substrate chuck unit 1 (8) and the other side of the processing chamber 3000. Further, the substrate processing apparatus includes a first gate G1 that controls communication between the substrate chuck unit 1A and the first buffer chamber 2000, and a second gate G2 that controls the first buffer chamber to 2000 and the processing chamber The communication between the chambers 3〇〇〇; the third gate G3, which controls the communication between the processing chamber 3000 and the second buffer chamber 4000; and the fourth gate G4, which controls the second buffer chamber 4〇〇〇 Communication with the substrate chuck unit 1〇〇〇. Further, the substrate processing apparatus includes a moving module (not shown) that connects the base chuck unit 1000, the first buffer chamber 2, the processing chamber 3000, and the second buffer chamber 4000 to each other to move the holding substrate Carrier 200 of S. A thin plate type substrate such as a film or a sheet can be used as the substrate S. However, the substrate s is not limited thereto, and thus, a glass substrate or a wafer can be used as the substrate s.
S 201243994 ；f 作為結合裝置的結合模乡且（未圖示）可安置在處理腔室 3000内以將一對基底S1和S2彼此結合。 裝載和卸載基底S的基底夾盤單元1〇〇〇包含：載體 200,其將基底S IU持在其側表面上以移動基底s ;以及失 盤模組400，其將基底S固持在載體2〇〇的侧表面上，或 從載體2〇0移除基底S。將基底s固持在載體2〇〇上或從 載體200移除基底S可在大氣中執行。 參看圖3，載體200包含具有平板形狀的主體21〇， 和安裝在主體210的側表面上的粘性夾盤22〇。主體21〇 具有四角形板雜，但祕於此，且因此可具有對應於基 底S的各種形狀。參看圖2到5，主體21〇具備多個第一 穿孔21卜多個第-孔212和多個連接凹座213。第一穿孔 211在主體210内彼此間隔恒定距離。稍後將描述的提升 杆410垂直移動穿過第一穿孔2U。第一孔212連接到猶 後將描述的緊密接觸部件42〇，使得可在第一孔212中形 成真空或可瓶體供朗其處。#通過緊密接觸部件· 在第-孔212中形成真空時，基底s通過真空吸附力緊密 枯附到枯性夾盤220。相反，當經由緊密接觸部件42〇將 =體注射到第—孔212中時，緊絲附到雜夾盤220的 土底s由於氣體的注射壓力而與粘性夾盤22〇脫離。第— 孔212在主體21〇内彼此間隔恒定距離。第一孔212可安 置在弟穿孔211之間。具有線形狀的連接凹座213將第 孔212彼此連接。即，第一孔212的上部部分與連接凹 座213連通，且其下部部分連接到安置在載體2〇〇外部的 201243994 41897pif 緊密接觸部件420。連接凹座213可具有朝向主體 内部凹入的線形狀，且具有上部開口且安置给的 211之間。 —穿孔 粘性夾盤220具有粘性以固持基底s，且安置 210的頂部表面上。可以薄片形式製造例如基於矽^體 材料、基於壓克力的材料或基於氟的材料等的具有知的 材料以製造粘性夾盤220。粘性夾盤220可小於主體士性的 且小於或大於基底S，且安置在主體21〇的中心部分2^〇， 即，粘性夾盤220經安置以暴露主體21()的邊緣，。 S附接到粘性夾盤220上。因此，當固持基底s的載體 由移動模組（未圖示）移動時，基底s與移動模組間 以借此保護基底S。即，當移動模組（未圖示）移動二 2〇〇時，移動模組支撐載體200的主體21〇的邊緣，借 防止移動模組損壞基底S。 曰 粘性夾盤220具備多個第二穿孔221和多個第二孔 222。第二穿孔221安置在主體210的第一穿孔2U的上側 上以分別與第一穿孔211連通。第二孔222安置在主體21〇 的連接凹座213的上侧上以與連接凹座213連通。因此， 當垂直移動時，提升杆410通過主體21〇的第一穿孔2n， 以及枯性夾盤220的第二穿孔221。當通過緊密接觸部件 420在主體210的第一孔212内形成真空時，也經由與第 一孔212連通的連接凹座213在枯性夾盤220的第二孔222 内形成真空。相反，當經由緊密接觸部件42〇將氣體注射 到主體210的第一孔212内時，經由與第一孔212連通的 201243994/pif 連接凹座213將氣體引入到粘性夾盤220的第二孔222中。 如此，載體200包含在主體210的側表面上的粘性夾 盤220 ’且作為柔性薄板的基底s粘附到粘性夾盤220。 因此，當載體200移動基底S時，基底S維持在平坦狀態。 另外，在移動時，防止基底S在載體200上移動，或防止 歸因於基底S的下垂而發生變形。由於通過枯性夾盤220 的粘性固持基底S，所以基底S即使在真空條件下也有效 地固定到粘性夾盤220。因此，在基底8在大氣中通過夾 盤模組400粘附到載體200的粘性夾盤22〇之後，即使在 固持基底S的載體200被轉移到多個處理腔室3〇〇()中的 真空中時，載體2〇〇也牢固地固持基底s。 β圖7A和7B是說明根據當前實施例的夾盤模組4〇〇 的提1杆410的橫截面圖。圖8是說明根據當前實施例的 夾盤模組400的緊密接觸部件420的橫截面圖。下文中， 現將參看圖2、3以及7Α到8描述夾盤模組4〇〇的提升杆 410和緊密接觸部件420。 參看圖2、3、7Α和w，夾盤模組4〇〇包含：提升杆 ^其通過吸附力固持基底s而垂直移動以將基底s放 枯性夾盤220的側表面上或從枯性夾盤22〇移除基底 穷=及緊密接觸部件42〇，其使基底s與祕失盤22〇緊 觸。此外’夾盤模組彻包含：第一真空形成零件 :，其用於在提升杆彻内形成真空；第一氣體供應零 41) b其用於將氣體供應到提升杆410中；驅動零件 ’其用於垂直移動提升杆_;以及支撐部件，其 11 201243994 41897pif 用於在基底S載入在載體200上或從载體2〇〇卸載時支 载體200。 提升杆410垂直移動以將基底s放置在點性失盤22〇 上，或從枯性夾盤220移除基底S。即，提升杆41〇垂直 移，以通過主體21〇的第-穿孔2n，以及枯性夾盤22〇 的第二穿孔22卜借此將基底S放置在雛爽盤22〇上， 或從粘性夾盤220務除基底S。如圖7八和7B中說明，提 升杆具有擁有内部空間的形狀（例如，管形狀），和 ，部空間連通的開放端。提升杆物連接到用於在提升 ^10内形成真空的第—真空形成零件仙，以及用於供 ，、氣體的第-氣體供應零件411b。第—真空形成零件4Ua 匕含連接到提升杆410的内部的第一真空線路411&_2，和 對，一真空線路41U-2執行抽吸操作的第一泵41 la-1。第 =氣體供應零件4llb包含連接到提升杆彻的内部的第一 乳體供應線路411b-2，和將氣體供應到第一氣體供應線路 4llb，2的第一氣體儲存零件4iib_i。 因此’在如圖7A中所說明的提升杆支撐基底s 3狀態中，當第-真空形成零件411a在提升杆41〇内形成 ，空時，基底S被粘附到提升杆41〇的端部。在此狀態中， =如圖7B中所說明向下移動提升杆41()時，基底s被放 到點性夾盤220上。在此點處，由於基底s钻附到提升 杆410，所以防止當提升杆向下移動以將基底s放置 ^枯性夾盤220上時基底S滑脫^相反，在基底s枯附到 升杆410之後，當提升杆410向上移動時，從粘性夾盤 12 201243994卿f 220移除基底s。在此點處，由於基底s粘附到提升杆41〇, 所以防止當從粘性夾盤220移除基底S時基底S滑脫。當 第一氣體供應零件411b將氣體供應到提升杆41〇令以移除 真空時，可容易從提升杆410移除基底s。 緊密接觸部件420使基底S與粘性夾盤220緊密接 觸，或使基底S與粘性夾盤220脫離。使用真空吸附力使 基底S與粘性夾盤22〇緊密接觸的真空吸附部件被例示為 緊岔接觸部件420。下文中，緊密接觸部件42〇稱為真空 吸附部件420a。參看圖8,真空吸附部件420a具有包含内 部空間的管形狀，和與内部空間連通的開放端。真空吸附 部件420a安置在主體21〇的第一孔212的下侧上以與第一 孔212連通。真空吸附部件4 2 〇 a連接到用於在真空吸附部 件倒a内形成真空的第二真娜成零件他，以及用於 將氣體供應到真空吸附部件偷中的第二氣體供應零件 421b。第二真空形成零件42u包含連接到真空吸附部件 4=的内部的第二真空線路伽-2，和向第二真空線路 二-2提供抽吸功率的第二果他_2。第二氣體供應零件 包含連接到提升杆41G的内部的第二氣體供應線路 2 ’和將氣體供應到第二氣體供應線路421b_2 氣體儲存零件421b-l。 一 …二b’在如圖8中所說明的基底8放置在雑夾盤220 4?0 ^中、’當第二真空形成零件42U在真空吸附部件 笛形錢料’也在與真空吸附部件偷的内部連 L、苐—孔212内形成真空。在此點處，由於第-孔212S 201243994 ; f as a bonding mold of the bonding device and (not shown) may be disposed in the processing chamber 3000 to bond the pair of substrates S1 and S2 to each other. The substrate chuck unit 1 for loading and unloading the substrate S includes a carrier 200 that holds the substrate S IU on its side surface to move the substrate s, and a loss-proof module 400 that holds the substrate S on the carrier 2 The substrate S is removed from the side surface of the crucible or from the carrier 2〇0. Holding the substrate s on or removing the substrate S from the carrier 200 can be performed in the atmosphere. Referring to Fig. 3, the carrier 200 includes a main body 21A having a flat plate shape, and an adhesive chuck 22'' mounted on a side surface of the main body 210. The main body 21 has a quadrangular plate, but is secretive thereto, and thus may have various shapes corresponding to the base S. Referring to Figures 2 through 5, the main body 21A is provided with a plurality of first through holes 21, a plurality of first holes 212 and a plurality of connecting recesses 213. The first perforations 211 are spaced apart from one another by a constant distance within the body 210. The lift lever 410, which will be described later, moves vertically through the first through hole 2U. The first hole 212 is connected to the close contact member 42 犹 which will be described later so that a vacuum can be formed in the first hole 212 or the bottle can be placed therein. # Passing the contact member. When a vacuum is formed in the first hole 212, the substrate s is closely adhered to the dry chuck 220 by vacuum suction. In contrast, when the body is injected into the first hole 212 via the close contact member 42, the soil s attached to the miscible 220 is detached from the adhesive chuck 22 due to the injection pressure of the gas. The first holes 212 are spaced apart from each other by a constant distance within the main body 21''. The first aperture 212 can be placed between the young apertures 211. The connection recesses 213 having a line shape connect the first holes 212 to each other. That is, the upper portion of the first hole 212 is in communication with the connection recess 213, and the lower portion thereof is connected to the 201243994 41897pif close contact member 420 disposed outside the carrier 2 . The connection recess 213 may have a line shape recessed toward the inside of the body, and has an upper opening and is disposed between the 211. - Perforation The adhesive chuck 220 has adhesiveness to hold the substrate s and is disposed on the top surface of the 210. The viscous chuck 220 can be manufactured in a sheet form, for example, based on a squeezing material, an acryl-based material, or a fluorine-based material. The viscous chuck 220 can be smaller than the body and smaller or larger than the substrate S, and disposed at the central portion 2 of the body 21, i.e., the viscous chuck 220 is disposed to expose the edge of the body 21(). S is attached to the adhesive chuck 220. Therefore, when the carrier holding the substrate s is moved by the moving module (not shown), the substrate s and the moving module are thereby protected by the substrate S. That is, when the moving module (not shown) moves two inches, the moving module supports the edge of the main body 21 of the carrier 200 to prevent the moving module from damaging the substrate S.粘性 The adhesive chuck 220 is provided with a plurality of second through holes 221 and a plurality of second holes 222. The second through holes 221 are disposed on the upper side of the first through holes 2U of the main body 210 to communicate with the first through holes 211, respectively. The second hole 222 is disposed on the upper side of the coupling recess 213 of the main body 21A to communicate with the coupling recess 213. Therefore, when moving vertically, the lift lever 410 passes through the first through hole 2n of the main body 21, and the second through hole 221 of the dry chuck 220. When a vacuum is formed in the first hole 212 of the body 210 by the close contact member 420, a vacuum is also formed in the second hole 222 of the dry chuck 220 via the connection recess 213 communicating with the first hole 212. In contrast, when gas is injected into the first hole 212 of the body 210 via the close contact member 42 ,, gas is introduced into the second hole of the viscous chuck 220 via the 201243994/pif connection recess 213 in communication with the first hole 212. 222. Thus, the carrier 200 includes the adhesive chuck 220' on the side surface of the main body 210 and adheres to the adhesive chuck 220 as the substrate s of the flexible thin plate. Therefore, when the carrier 200 moves the substrate S, the substrate S is maintained in a flat state. Further, when moving, the substrate S is prevented from moving on the carrier 200, or deformation due to sagging of the substrate S is prevented. Since the substrate S is held by the viscosity of the dry chuck 220, the substrate S is effectively fixed to the adhesive chuck 220 even under vacuum conditions. Therefore, after the substrate 8 is adhered to the adhesive chuck 22 of the carrier 200 by the chuck module 400 in the atmosphere, even if the carrier 200 holding the substrate S is transferred to the plurality of processing chambers 3() When in a vacuum, the carrier 2〇〇 also firmly holds the substrate s. 7A and 7B are cross-sectional views illustrating the lifter 410 of the chuck module 4A according to the current embodiment. Figure 8 is a cross-sectional view illustrating the close contact member 420 of the chuck module 400 in accordance with the current embodiment. Hereinafter, the lift lever 410 and the close contact member 420 of the chuck module 4A will now be described with reference to Figs. 2, 3 and 7A through 8. Referring to Figures 2, 3, 7 and w, the chuck module 4A includes: a lifting rod that is vertically moved by the holding force to hold the substrate s to place the substrate s on the side surface of the dry chuck 220 or from the dead The chuck 22 〇 removes the substrate poor = and the close contact member 42 〇 which causes the substrate s to be in close contact with the lost disk 22 . In addition, the 'chuck module includes: a first vacuum forming part: which is used to form a vacuum inside the lifting rod; a first gas supply zero 41) b for supplying gas into the lifting rod 410; driving the part ' It is used to vertically move the lifting rod _; and a support member, 11 201243994 41897pif for supporting the carrier 200 when the substrate S is loaded on or unloaded from the carrier 2 . The lift bar 410 moves vertically to place the substrate s on the pointless disk 22 or remove the substrate S from the dry chuck 220. That is, the lifting lever 41 is vertically moved to pass the first through hole 2n of the main body 21, and the second through hole 22 of the dry chuck 22, thereby placing the substrate S on the crisp disk 22, or from the sticky The chuck 220 removes the substrate S. As illustrated in Figures 7 and 7B, the lifting rod has a shape having an internal space (e.g., a tube shape), and an open end in which the space is communicated. The lifting bar is connected to a first vacuum forming part for forming a vacuum in the lift ^10, and a first gas supply part 411b for supplying gas. The first vacuum forming part 4Ua includes a first vacuum line 411 & _2 connected to the inside of the lift rod 410, and a first pump 41 la-1 which performs a suction operation on a vacuum line 41U-2. The first gas supply part 4llb includes a first milk supply line 411b-2 connected to the inside of the lift rod, and a first gas storage part 4iib_i that supplies gas to the first gas supply line 411b, 2. Therefore, in the state of the lift lever supporting base s 3 as illustrated in FIG. 7A, when the first vacuum forming member 411a is formed in the lift lever 41, when empty, the substrate S is adhered to the end of the lift lever 41〇. . In this state, when the lift lever 41 () is moved downward as illustrated in Fig. 7B, the substrate s is placed on the spot chuck 220. At this point, since the substrate s is drilled to the lifting rod 410, the substrate S is prevented from slipping when the lifting rod is moved downward to place the substrate s on the dry chuck 220, and the substrate s is attached to the liter. After the rod 410, when the lift rod 410 moves upward, the substrate s is removed from the adhesive chuck 12 201243994. At this point, since the substrate s is adhered to the lift lever 41〇, the substrate S is prevented from slipping when the substrate S is removed from the adhesive chuck 220. When the first gas supply part 411b supplies gas to the lift lever 41 to remove the vacuum, the substrate s can be easily removed from the lift rod 410. The close contact member 420 brings the substrate S into close contact with the adhesive chuck 220 or disengages the substrate S from the adhesive chuck 220. A vacuum suction member that uses the vacuum suction force to bring the substrate S into close contact with the adhesive chuck 22 is exemplified as the contact member 420. Hereinafter, the close contact member 42 is referred to as a vacuum adsorption member 420a. Referring to Fig. 8, the vacuum suction member 420a has a tube shape including an inner space, and an open end communicating with the inner space. The vacuum suction member 420a is disposed on the lower side of the first hole 212 of the main body 21''' to communicate with the first hole 212. The vacuum suction member 4 2 〇 a is connected to a second sinusoidal component for forming a vacuum in the vacuum adsorption member, and a second gas supply member 421b for supplying gas to the vacuum adsorption member. The second vacuum forming part 42u includes a second vacuum line gamma-2 connected to the inside of the vacuum adsorption section 4=, and a second fruit _2 which supplies the suction power to the second vacuum line 2-4. The second gas supply part includes a second gas supply line 2' connected to the inside of the lift rod 41G and supplies the gas to the second gas supply line 421b_2 gas storage part 421b-1. One...two b' is placed in the crucible chuck 220 4?0 ^ as shown in Fig. 8, and 'when the second vacuum forming part 42U is in the vacuum adsorption part flute money' is also in the vacuum adsorption part The inside of the stolen L-, 苐-hole 212 forms a vacuum. At this point, due to the first hole 212
13 S 201243994 41897pif 經由連接凹座213與粘性失盤220的第二孔222連通，因 此也在第二孔222内形成真空。因此，第二孔222 =真* 吸附力使基底S與枯性爽盤220緊密接觸，且枯性般1二 的粘性固持基底S。 因此，夾盤模組400促進將基底s粘附到载體 ^生爽盤220。即’基底S在平坦狀態中枯附到枯性夹盤 圖9是說明根據-示範性實施例的緊密接觸部件 底與粘性夾盤緊密接觸的方法的橫截面圖。圖1〇是說^ 據另一實施例的緊密接觸部件使基底與粘性夾盤g宓^ 的方法的橫截關。圖11是說明根據另—實施例的^ 觸部件使基底與雌夾盤緊密翻的方法的橫截面圖。 下文中，現將參看圖9到11描述根據示範性 的緊密接觸部件使基底S與雜錢22G緊密接觸 法。根據圖9的實施例的緊密接觸部件42〇稱為旋轉 4 2 〇 b。根據圖i 〇的實施例的緊密接觸部件稱為按壓 < 420c。根據圖11的實施例的緊密接觸 體注射部件·d。為了方便描述，在= 省略第-孔212、連接凹座213和第二孔222中攸载體 儘管在先前實施例中將真空吸附部件42013 S 201243994 41897pif communicates with the second aperture 222 of the viscous loss plate 220 via the connection recess 213, thus also creating a vacuum within the second aperture 222. Therefore, the second hole 222 = true * adsorption force causes the substrate S to be in close contact with the dryness plate 220, and the sturdy adhesion of the substrate S is suppressed. Thus, the chuck module 400 facilitates adhering the substrate s to the carrier plate 220. That is, the substrate S is attached to the dry chuck in a flat state. Fig. 9 is a cross-sectional view illustrating a method in which the bottom of the close contact member is in close contact with the adhesive chuck according to the exemplary embodiment. Figure 1 is a cross-sectional view of a method in which a close contact member of another embodiment causes a substrate to be adhered to a viscous chuck. Figure 11 is a cross-sectional view illustrating a method of tightly flipping a substrate and a female chuck according to another embodiment. Hereinafter, a method of bringing the substrate S into close contact with the miscellaneous 22G according to an exemplary close contact member will now be described with reference to Figs. The close contact member 42 according to the embodiment of Fig. 9 is referred to as a rotation 4 2 〇 b. The close contact member according to the embodiment of Fig. i is referred to as pressing < 420c. The close contact injection member d according to the embodiment of Fig. 11 . For convenience of description, the carrier is omitted in the =-hole 212, the connection recess 213, and the second hole 222. Although the vacuum adsorption member 420 is used in the previous embodiment.
部件420 ’但本發明不限於此，且因此各種部件可 用作緊密接觸部件。 J 舉例來說’如圖9中說明，旋轉部件42〇b可 植接觸部件42〇 ’且通過在基底s上_所述旋轉部件 201243994 ——/pif 420b將基底S緊密粘附到粘性夾盤220 〇對於另一實例， 如圖10中說明，具有板形狀的按壓部件42〇c可從基底s 的上侧按壓基底S。在此點處，按壓部件420c的壓力使基 底S與粘性夾盤220緊密接觸。 對於另一實例，如圖11中說明，氣體注射部件42〇d 可安置在基底S上以將Ar氣或空氣注射到基底s的上部 部分。在此點處，Ar氣或空氣的注射壓力使基底s與粘性 夾盤220緊密接觸。如此，旋轉部件420b、按壓部件42〇c 和氣體注射部件420d不僅可在大氣中使用，而且可在真空 條件下使用。 ~ 當然，本發明不限於此，且因此各種部件可用作緊密 接觸部件420。 圖12疋s兑明根據一示範性實施例的基底處理裝置的 操作的示意圖。圖13是說明根據當前實施例的移動模組移 動所固持的基底S的狀態的透視圖。下文中，現將參看圖 1到13根據一示範性實施例描述使用基底處理裝置的基底 處理方法。當前實施例的與先前實施例相同的部分將予以 簡要描述，或將省略其描述。 根據當前實施例的基底處理裝置用於將0 LED面板製 造為柔性薄板。為此’將例如膜或薄片等的薄板型基底用 作下表面S2和上部基底S1。舉例來說，第一電極、有機 層和第二電極可堆疊在下表面S2上，且上部基底S1可為 用於覆蓋第一電極、有機層和第二電極的覆蓋基底。下文 中，現將描述夾盤模組400將上部基底S1粘附到載體2〇〇 15 201243994 4l897pif 的方法。 裁俨fnf目12 ’基底夾鮮元嶋的支撐部件460支撐 且上部基底S1安置在載體細上，其間存t 的端部支撐上部基底S1。接著，當第一直= 提t杆彻内形成真純，上部基底S1點 邱A底S1於番〇。隨後’當提升杆410向下移動時，將上 =底放置在枯性夾盤220上，如圖7B和12中說明。 I點處’由於上部基底S1 ,制谓提升杆㈣的端部，The member 420' is not limited thereto, and thus various members can be used as the close contact member. J For example, 'as illustrated in Fig. 9, the rotating member 42〇b can implant the contact member 42〇' and adhere the substrate S to the adhesive chuck by on the substrate s_the rotating member 201243994-/pif 420b 220 〇 For another example, as illustrated in FIG. 10, the pressing member 42A having a plate shape can press the substrate S from the upper side of the substrate s. At this point, the pressure of the pressing member 420c brings the substrate S into close contact with the adhesive chuck 220. For another example, as illustrated in Fig. 11, a gas injection part 42〇d may be disposed on the substrate S to inject Ar gas or air into the upper portion of the substrate s. At this point, the injection pressure of Ar gas or air brings the substrate s into close contact with the viscous chuck 220. Thus, the rotating member 420b, the pressing member 42〇c, and the gas injection member 420d can be used not only in the atmosphere but also under vacuum conditions. Of course, the invention is not limited thereto, and thus various components can be used as the close contact member 420. Figure 12 is a schematic illustration of the operation of a substrate processing apparatus in accordance with an exemplary embodiment. Figure 13 is a perspective view illustrating a state of the substrate S held by the movement of the moving module according to the current embodiment. Hereinafter, a substrate processing method using a substrate processing apparatus will now be described with reference to Figs. 1 through 13 in accordance with an exemplary embodiment. The same portions of the current embodiment as those of the previous embodiment will be briefly described, or a description thereof will be omitted. The substrate processing apparatus according to the current embodiment is for manufacturing a 0 LED panel as a flexible sheet. For this purpose, a thin-plate type substrate such as a film or a sheet is used as the lower surface S2 and the upper substrate S1. For example, the first electrode, the organic layer, and the second electrode may be stacked on the lower surface S2, and the upper substrate S1 may be a cover substrate for covering the first electrode, the organic layer, and the second electrode. Hereinafter, a method in which the chuck module 400 adheres the upper substrate S1 to the carrier 2 201243994 4l897pif will now be described. The support member 460 of the base member 12 is supported and the upper substrate S1 is placed on the carrier fine, and the end portion between the supports t supports the upper substrate S1. Then, when the first straight = the t-bar is formed into true purity, the upper base S1 points to the bottom of the bottom S1 in Panyu. Then, when the lift lever 410 is moved downward, the upper/bottom is placed on the dry chuck 220 as illustrated in Figs. 7B and 12. At the point I, due to the upper base S1, the end of the lifter (four) is made.
滑^防止在上部基底S1放置在祕夾盤22G上時基底S 接著，緊密接觸部件420使上部基底S1與钻性夾盤 0緊费接觸。在此點處’真空吸附部件4施用作緊密接 觸部件420。即’真空吸附部件42加與第一孔212連通， ^第-真空形成零件421a在真空吸附部件4施内形成真 空。由於第-孔212和連接凹座213與真空吸附部件 420a 的内部連通，所以經由第一孔212*連接凹座213在枯性 夾盤220的第二孔222内形成真空。在此點處，第二孔222 内產生的真空吸附力使上部基底S1與紐夾盤22〇緊密 接觸，且粘性夾盤220的粘性固持上部基底S1。 接著，移動模組在工藝流程方向上移動載體2〇〇，即， 循序將載體200移動到第一緩衝腔室2〇〇〇和處理腔室 3000。在此點處，固持上部基底S1的載體2〇〇可顛倒。 即，在移動載體200的同時，可將移動模組5〇〇安置在載 16 201243994 -----pif 體200的上部基底S1 _附到的下部部分處 底S1可安置在載體200與移動模組5〇〇之 /基 後續工藝中，將上部基底81安置在下部基底 下部基底S2。如圖i3中說明的傳送機 ^ •參看圖13,移動模組5⑻包含_51== 二轴510的兩端的多個幸昆52〇。此外，移動模組包 3用於向輥520施加扭矩的扭矩供應零件（未圖示 告 =動模組500移動載體200時，油〇旋轉，從二“ =:的邊緣。即，當輥52〇旋轉時，觀52〇支__ 3^ 220的主體210的邊緣。輥52〇可具有大於轴51〇 的外徑的外徑。因此，當報52〇支樓主體21㈣邊緣時， 2 510與上部基底S1間隔開。因此，當移動模組移 動载體200所固持的上部基底S1 _，可保護上部基底si 免受移動模組500影響。 - 如上所述，將傳送機用作移動模組5〇〇，其 和軸510'然而，本發明不限於此，且因此任何用於轉移 固持基底S的載體200的部件均可用作移動模組5〇〇。另 外，如上所述，載體2〇〇與在載體2〇〇與移動模組5〇〇之 間的基底S —起移動。然而，本發明不限於此。因此，當 载體2〇0移動時，载體2〇〇可安置在移動模組$⑻上且^ 底s可安置在載體200上。 田移動模組500經由第一緩衝腔室2〇〇〇將載體2〇〇 轉移到處理腔室3〇〇〇時’在處理腔室3〇〇〇内處理基底s。 上部基底S1和下部基底S2在處理腔室3〇〇〇中彼此結合Sliding prevents the substrate S from being placed on the upper chuck S22. Next, the close contact member 420 brings the upper substrate S1 into contact with the drill chuck 0. At this point, the vacuum suction member 4 is applied as the close contact member 420. That is, the vacuum suction member 42 is connected to the first hole 212, and the first vacuum forming member 421a forms a vacuum in the vacuum suction member 4. Since the first hole 212 and the coupling recess 213 communicate with the inside of the vacuum suction member 420a, the vacuum is formed in the second hole 222 of the dry chuck 220 via the first hole 212* connecting the recess 213. At this point, the vacuum suction force generated in the second hole 222 brings the upper substrate S1 into close contact with the chuck 22, and the viscosity of the adhesive chuck 220 holds the upper substrate S1. Next, the mobile module moves the carrier 2 in the process flow direction, i.e., sequentially moves the carrier 200 to the first buffer chamber 2 and the processing chamber 3000. At this point, the carrier 2 which holds the upper substrate S1 can be reversed. That is, while the carrier 200 is being moved, the mobile module 5 can be placed at the lower portion of the upper substrate S1_ attached to the upper substrate S1_-pif body 200. The bottom S1 can be placed on the carrier 200 and moved. In the subsequent process of the module 5, the upper substrate 81 is placed on the lower substrate lower substrate S2. The conveyor as illustrated in Figure i3. Referring to Figure 13, the mobile module 5 (8) includes a plurality of stunned 52 _ at both ends of the _51 == two-axis 510. In addition, the moving module package 3 is used for a torque supply component that applies torque to the roller 520 (not shown) when the movable module 500 moves the carrier 200, the oil 〇 rotates from the edge of the two "=:", that is, when the roller 52 When the crucible is rotated, the edge of the main body 210 of the __ 3^ 220 is viewed. The roller 52A may have an outer diameter larger than the outer diameter of the shaft 51. Therefore, when the edge of the main body 21 (four) of the slab is reported, 2 510 It is spaced apart from the upper substrate S1. Therefore, when the moving module moves the upper substrate S1_ held by the carrier 200, the upper substrate si can be protected from the mobile module 500. - As described above, the conveyor is used as a moving mode Group 5〇〇, and the shaft 510' However, the invention is not limited thereto, and thus any component for transferring the carrier 200 holding the substrate S can be used as the moving module 5〇〇. In addition, as described above, the carrier 2〇〇 moves with the substrate S between the carrier 2〇〇 and the mobile module 5〇〇. However, the invention is not limited thereto. Therefore, when the carrier 2〇0 moves, the carrier 2 Placed on the mobile module $(8) and the bottom s can be placed on the carrier 200. The field mobile module 500 is first buffered The chamber 2〇〇〇 processes the substrate s in the processing chamber 3〇〇〇 when transferring the carrier 2〇〇 to the processing chamber 3〇〇〇. The upper substrate S1 and the lower substrate S2 are in the processing chamber 3〇〇〇 Combine with each other
S 17 201243994 41897pif 且接合。為此，單獨的移動模組（未圖示）將下部基底S2 作為薄板引入到處理腔室3000中。所述用於引入下部基底 S2的移動模組（未圖示）可與用於移動上部基底S1的傳 送機相同。當放置在用於下部基底S2的移動模組（未圖 示）上的下部基底S2移動時，下部基底S2的接合表面可 向上定向。儘管未圖示，但第一電極、空穴注入層（Hil)、 空八傳輸層（HTL)、發射層（EML)、電子傳輸層（etl)、 電子注入層（EIL)和第二電極堆疊在下部基底S2上。將 作為粘合劑的密封劑施加到下部基底S2的邊緣。或者， 可將密封劑施加到上部基底S1的邊緣，或上部基底S1與 下部基底S2兩者的邊緣。處理腔室3〇〇〇容納：上表面板 (未圖示），其用於支撐固持上部基底S1的載體2〇〇;下 表面板（未圖示），其用於支撐下部基底S2;以及固化模 組（未圖示），其用於使密封劑固化。當將固持上部基底 S1的載體200引入到處理腔室3000中時，上表面板（未 圖示）支撐上部基底S1，且下表面板（未圖示）支撐下部 基底S2。當上表面板（未圖示）支撐上部基底si時，載 體200可固持上部基底S1。此後，使上表面板（未圖示） 和下表面板（未圖示）中的至少一者垂直移動以使上部基 底S1與下部基底S2彼此緊密接觸。接著，固化模組（未 圖示）使上部基底S1與下部基底S2之間的密封劑固化以 將上部基底S1與下部基底S2彼此接合。 當上部基底S1與下部基底S2在處理腔室3000内彼 此完全接合時，將固持上部基底S1和下部基底S2的載體 S I. 18 201243994 200放置在移動模組500上，且接著經由第二緩衝腔室4〇〇〇 移動到夾盤模組400。接著，從載體200移除上部基底S1 和下部基底S2。為此，將載體2〇〇放置在夾盤模組4〇〇的 支撐部件460上，且接著將緊密接觸部件42〇 (即，真空 吸附部件420a)連接到主體21〇的第一孔212。當真空吸 附牛420a與第一孔212連通時，第二氣體供應零件 421b 將氣體供應到真空吸附部件42〇a中。在此點處，氣體經由 真工及附。卩件420a注射到第一孔212、連接凹座213和第 一孔222中，且氣體的注射壓力克服粘性夾盤22〇與上部 基底S1之間的枯性。因此，上部基底S1與枯性央盤22〇 脫離。接下來，提升杆410穿過載體2〇〇的第一穿孔211 和第二穿孔221向上移動’使得提升杆41G的端部支樓基 底S。隨後，當在提升杆41〇内形成真空時，第一孔Μ〗、 ，接凹座213和第二孔222的真空吸附力將上部基底si f附到提升杆410。接著，提升杆彻從祕夾盤22〇向 移動以從祕夾盤22〇移除上部基底S1。在此點處由 =部基底S2接合到上部基底S1，所以下部基底s2和上 。丨基底S1兩者均被從載體2〇〇移除。 ^彼此結合且接合^而’本發明不限於此n ς體 。因此，#體S 17 201243994 41897pif and joined. To this end, a separate moving module (not shown) introduces the lower substrate S2 as a thin plate into the processing chamber 3000. The moving module (not shown) for introducing the lower substrate S2 may be the same as the conveyor for moving the upper substrate S1. When the lower substrate S2 placed on the moving module (not shown) for the lower substrate S2 is moved, the joint surface of the lower substrate S2 can be oriented upward. Although not illustrated, the first electrode, the hole injection layer (Hil), the empty eight transport layer (HTL), the emission layer (EML), the electron transport layer (etl), the electron injection layer (EIL), and the second electrode stack On the lower substrate S2. A sealant as an adhesive is applied to the edge of the lower substrate S2. Alternatively, a sealant may be applied to the edge of the upper substrate S1, or the edge of both the upper substrate S1 and the lower substrate S2. The processing chamber 3 〇〇〇 accommodates: an upper surface plate (not shown) for supporting the carrier 2 holding the upper substrate S1; a lower surface panel (not shown) for supporting the lower substrate S2; A curing module (not shown) for curing the sealant. When the carrier 200 holding the upper substrate S1 is introduced into the processing chamber 3000, an upper surface plate (not shown) supports the upper substrate S1, and a lower surface panel (not shown) supports the lower substrate S2. When the upper surface plate (not shown) supports the upper substrate si, the carrier 200 can hold the upper substrate S1. Thereafter, at least one of the upper surface plate (not shown) and the lower surface panel (not shown) is vertically moved to bring the upper substrate S1 and the lower substrate S2 into close contact with each other. Next, a curing module (not shown) cures the sealant between the upper substrate S1 and the lower substrate S2 to bond the upper substrate S1 and the lower substrate S2 to each other. When the upper substrate S1 and the lower substrate S2 are completely engaged with each other in the processing chamber 3000, the carrier S I. 18 201243994 200 holding the upper substrate S1 and the lower substrate S2 is placed on the mobile module 500, and then via the second buffer. The chamber 4 is moved to the chuck module 400. Next, the upper substrate S1 and the lower substrate S2 are removed from the carrier 200. To this end, the carrier 2 is placed on the support member 460 of the chuck module 4, and then the close contact member 42 (i.e., the vacuum suction member 420a) is attached to the first hole 212 of the body 21''. When the vacuum suction cattle 420a is in communication with the first hole 212, the second gas supply part 421b supplies the gas into the vacuum adsorption member 42A. At this point, the gas is passed through the real work and attached. The jaw 420a is injected into the first hole 212, the coupling recess 213, and the first hole 222, and the injection pressure of the gas overcomes the dryness between the viscous chuck 22 and the upper substrate S1. Therefore, the upper substrate S1 is separated from the dry central disk 22〇. Next, the lifting rod 410 is moved upward through the first perforation 211 and the second perforation 221 of the carrier 2' so that the end of the lifting rod 41G supports the base S. Subsequently, when a vacuum is formed in the lift rod 41, the vacuum force of the first hole 、, the recess 213 and the second hole 222 attaches the upper substrate si f to the lift rod 410. Then, the lift lever is moved from the secret chuck 22 to remove the upper base S1 from the secret chuck 22'. At this point, the sub-base S2 is bonded to the upper substrate S1, so the lower substrate s2 and upper. Both of the crucible substrates S1 are removed from the carrier 2〇〇. ^ are bonded to each other and joined to each other' and the present invention is not limited to this n body. Therefore, #体
如上所述，基底處料置使下縣底S2與上部基底 面。因此’可在平坦狀態愧附作為薄板型基底的基底〇 201243994 41897pif 因此，可穩定地製造薄板型顯示器面板，且基底可有效地 固持在真空條件下。 田使基底垂直移動時’載體和夾盤模組將基底附接到 提升杆’借此防土基底滑脫。由於將真空吸附部件用作緊 密接觸部件’所以可容易地絲底與祕夾盤"接觸了 在基底上旋轉的旋轉部件、具有板形狀以從基底的上 側按壓基底的觀料以縣 的氣體注射部件中的—者可㈣緊密 件H刀 二==及氣體注射部件可不僅在大氣中而=真 工條件下使基底與粘性夾盤緊密接觸。 A其考特定示範性實施例描述基底夾盤單元、包 ί的緑處理裝置和基底轉財法，但直不 脫離所附二人員將容易理解，可在不 對其作出==的本發明的精神和範圍的情況下 本發上’然其並非用以限定 發明之伴當可作些許之更動與潤飾，故本 【圖式當視後附之申糊 圖；圖1是說明根據-示範性實施例的基底處轉置的框 圖2疋說明根據一示範性實施例的包含巷+Jia 組的基底失盤單元的透視圖；載體和夹盤模As described above, the substrate is placed to lower the bottom of the county S2 and the upper substrate. Therefore, the substrate can be attached as a thin-plate type substrate in a flat state. 201243994 41897pif Therefore, a thin-plate type display panel can be stably manufactured, and the substrate can be effectively held under vacuum conditions. When the substrate moves the substrate vertically, the carrier and the chuck module attach the substrate to the lifting rod, thereby preventing the soil substrate from slipping off. Since the vacuum suction member is used as the close contact member', it is possible to easily contact the rotating member that rotates on the substrate with the spinning chuck, and has a plate shape to press the substrate from the upper side of the substrate. Among the injection parts, the four pieces of the tight parts H = 2 and the gas injection part can make the substrate in close contact with the adhesive chuck not only in the atmosphere but under the real conditions. A specific exemplary embodiment describes a substrate chuck unit, a green processing device and a substrate transfer method, but it will be easily understood without departing from the attached two persons, and the spirit of the present invention can be made without == And in the case of the scope of the present invention, it is not intended to limit the invention, and may be used for some modification and retouching. Therefore, the drawings are attached to the accompanying drawings; FIG. 1 is a diagram illustrating an exemplary embodiment according to an exemplary embodiment. Block diagram of a substrate transposed 2A illustrates a perspective view of a substrate loss unit including a lane + Jia group according to an exemplary embodiment; a carrier and a chuck mold
20 S 201243994 plf 圖3是沿著圖2的線A_A，截取的橫截面圖； 圖4是說明根據一示範性實施例的載體的透視圖； 圖5是說明根據一示範性實施例的載體的主體的透視 圖； 圖6疋忒明根據一示範性實施例的載體的粘性夾盤的 透視圖， 圖7 A和7 B是說明根據一示範性實施例的夾盤模組的 提升杆的橫戴面圖； 圖8是說明根據一示範性實施例的夾盤模組的緊密接 觸部件的橫截面圖； 圖9是說明根據一示範性實施例的緊密接觸部件使基 底與粘性夾盤緊密接觸的方法的橫截面圖； 圖1〇是說明根據另一實施例的緊密接觸部件使基底 與粘性夾盤緊密接觸的方法的橫截面圖； 圖11是說明根據另一實施例的緊密接觸部件使基底 與粘性夾盤緊密接觸的方法的橫截面圖； 圖12是說明根據一示範性實施例的基底處理裝置的 操作的示意圖；以及 圖13是說明根據一示範性實施例的移動模組移動所 固持的基底的狀態的透視圖。 【主要元件符號說明】 1000 :夾盤單元 2000 .第一緩衝腔室 3000 .處理腔室 21 201243994 41897pif 4000 :第二緩衝腔室 G1 :第一閘門 G2 :第二閘門 G3 :第三閘門 G4 :第四閘門 S、SI、S2 :基底 200 :載體 210 :主體 211 :第一穿孔 212 :多個第一孔 213 :多個連接凹座 220 :粘性夾盤 221 :第二穿孔 222 :第二孔 400 :夾盤模組 410 :提升杆 411a :第一真空形成零件 411a-l :第一泵 41 la-2 :第一真空線路 411b :第一氣體供應零件 411b-l :第一氣體儲存零件 411b-2 :第一氣體供應線路 412 :驅動零件 420 :緊密接觸部件 22 ^ 201243 994 plf 420a :吸附部件 421a :第二真空形成零件 421a-l :第二泵 421a-2 :第二真空線路 421b :第二氣體供應零件 421b-l :第二氣體儲存零件 42lb-2 :第二氣體供應線路 460 支撐部件 500 可將移動模組 510 軸 520 輥 2320 S 201243994 plf FIG. 3 is a cross-sectional view taken along line A_A of FIG. 2; FIG. 4 is a perspective view illustrating a carrier according to an exemplary embodiment; FIG. 5 is a diagram illustrating a carrier according to an exemplary embodiment FIG. 6 is a perspective view of an adhesive chuck of a carrier according to an exemplary embodiment, and FIGS. 7A and 7B are cross-sectional views illustrating a lifter of the chuck module according to an exemplary embodiment. FIG. 8 is a cross-sectional view illustrating a close contact member of a chuck module, according to an exemplary embodiment; FIG. 9 is a view illustrating a close contact member in close contact with a viscous chuck according to an exemplary embodiment. FIG. 1A is a cross-sectional view illustrating a method of bringing a substrate into close contact with an adhesive chuck according to another embodiment; FIG. 11 is a view illustrating a close contact member according to another embodiment. A cross-sectional view of a method in which a substrate is in intimate contact with an adhesive chuck; FIG. 12 is a schematic view illustrating operation of a substrate processing apparatus according to an exemplary embodiment; and FIG. 13 is a diagram illustrating movement according to an exemplary embodiment Group moves a perspective view of the substrate holding the solid state. [Main component symbol description] 1000: chuck unit 2000. First buffer chamber 3000. Processing chamber 21 201243994 41897pif 4000: second buffer chamber G1: first gate G2: second gate G3: third gate G4: The fourth gate S, SI, S2: the substrate 200: the carrier 210: the main body 211: the first perforation 212: the plurality of first holes 213: the plurality of connection recesses 220: the adhesive chuck 221: the second perforation 222: the second hole 400: chuck module 410: lift rod 411a: first vacuum forming part 411a-1: first pump 41 la-2: first vacuum line 411b: first gas supply part 411b-1: first gas storage part 411b -2 : First gas supply line 412 : Drive part 420 : Close contact part 22 ^ 201243 994 plf 420a : Adsorption part 421a : Second vacuum forming part 421a-1 : Second pump 421a-2 : Second vacuum line 421b : Second gas supply part 421b-1: second gas storage part 42lb-2: second gas supply line 460 support part 500 can move module 510 shaft 520 roll 23