TWI602016B - Photoresist composition and photoresist pattern formation method - Google Patents

Photoresist composition and photoresist pattern formation method Download PDF

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Publication number
TWI602016B
TWI602016B TW103104411A TW103104411A TWI602016B TW I602016 B TWI602016 B TW I602016B TW 103104411 A TW103104411 A TW 103104411A TW 103104411 A TW103104411 A TW 103104411A TW I602016 B TWI602016 B TW I602016B
Authority
TW
Taiwan
Prior art keywords
group
atom
substituent
alkyl group
acid
Prior art date
Application number
TW103104411A
Other languages
English (en)
Chinese (zh)
Other versions
TW201443556A (zh
Inventor
Tsuyoshi Nakamura
Kazuishi Tanno
Naoto Motoike
Tomoyuki Hirano
Yoshiyuki Utsumi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW201443556A publication Critical patent/TW201443556A/zh
Application granted granted Critical
Publication of TWI602016B publication Critical patent/TWI602016B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW103104411A 2013-03-26 2014-02-11 Photoresist composition and photoresist pattern formation method TWI602016B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013064408A JP6186149B2 (ja) 2013-03-26 2013-03-26 レジスト組成物及びレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW201443556A TW201443556A (zh) 2014-11-16
TWI602016B true TWI602016B (zh) 2017-10-11

Family

ID=51837389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103104411A TWI602016B (zh) 2013-03-26 2014-02-11 Photoresist composition and photoresist pattern formation method

Country Status (3)

Country Link
JP (1) JP6186149B2 (ja)
KR (1) KR102206691B1 (ja)
TW (1) TWI602016B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6706530B2 (ja) * 2016-03-31 2020-06-10 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP7033849B2 (ja) * 2017-01-25 2022-03-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP7058711B1 (ja) * 2020-12-16 2022-04-22 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010138330A (ja) * 2008-12-12 2010-06-24 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法
TW201239536A (en) * 2011-03-30 2012-10-01 Fujifilm Corp Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device
TW201305734A (zh) * 2011-06-22 2013-02-01 Shinetsu Chemical Co 圖案形成方法及光阻組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4857231B2 (ja) * 2006-09-26 2012-01-18 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5358102B2 (ja) * 2007-03-09 2013-12-04 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
JP5009015B2 (ja) 2007-03-22 2012-08-22 株式会社ダイセル 電子吸引性置換基及びラクトン骨格を含む多環式エステル及びその高分子化合物、フォトレジスト組成物
JP2009025723A (ja) 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP2009053690A (ja) * 2007-07-30 2009-03-12 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5910361B2 (ja) * 2011-07-14 2016-04-27 信越化学工業株式会社 パターン形成方法及びレジスト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010138330A (ja) * 2008-12-12 2010-06-24 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及びそれを用いたパターン形成方法
TW201239536A (en) * 2011-03-30 2012-10-01 Fujifilm Corp Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device
TW201305734A (zh) * 2011-06-22 2013-02-01 Shinetsu Chemical Co 圖案形成方法及光阻組成物

Also Published As

Publication number Publication date
KR102206691B1 (ko) 2021-01-22
TW201443556A (zh) 2014-11-16
JP2014191061A (ja) 2014-10-06
JP6186149B2 (ja) 2017-08-23
KR20140117288A (ko) 2014-10-07

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