TWI601834B - 連接線及其製造方法 - Google Patents
連接線及其製造方法 Download PDFInfo
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- TWI601834B TWI601834B TW104123459A TW104123459A TWI601834B TW I601834 B TWI601834 B TW I601834B TW 104123459 A TW104123459 A TW 104123459A TW 104123459 A TW104123459 A TW 104123459A TW I601834 B TWI601834 B TW I601834B
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Description
本發明之一個實施例係關於一種具有改良特性之連接線。
此外,本發明之另一實施例係關於一種具有根據本發明之一個實施例之連接線之微電子組件及/或製造根據本發明之一個實施例之連接線之方法。
連接線用於製造半導體裝置之方法中以便在製造半導體裝置中將積體電路電連接至印刷電路板。此外,使用連接線以便在電力電子應用中將電晶體及二極體電連接至外殼之接腳或墊子。連接線最初使用金來製造,且當前使用諸如銀之低價材料來製造。銀線具有極有利的電導率及熱導率,但銀線之連接本身具有問題。
在本發明中,連接線之術語涵蓋所有截面形狀及所有典型之線直徑。然而,較佳使用具有環形截面及短直徑之連接線。
由於銀比金便宜,因此近期若干研究及發展瞄準核心材料使用銀作為主要複合物之連接線。然而,必需進一步改良連接線本身及連接製程之連接線技術。
此【先前技術】部分中所揭示之上述資訊僅為加強對本發明背景之理解,且因此其可含有不構成我國一般熟習此項技術者已知之先前技術的資訊。
本發明致力於提供改良之連接線。
此外,本發明致力於提供藉由具有有利的可加工性且相互連接無難度而具有降低成本之優點的連接線。
另外,本發明致力於提供具有展現極佳連接性之優點之連接線。
此外,本發明致力於提供具有展現改良之循環特性之優點的連接線。
另外,本發明致力於提供具有解決線之間黏性之優點的連接線。
本發明之一例示性實施例提供連接線,該連接線包括90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質,其中(a)/(b)之比為3至5。
此處,(a)係指在線長度方向上之結晶定向<hkl>中具有<100>定向之晶粒的量,且(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量。
任一實施例之連接線,其中:摻雜劑可為鈣(Ca)。
任一實施例之連接線,其中:摻雜劑可為鈣,鈣含量可為10至100ppm。
任一實施例之連接線,其中:連接線之雙晶粒邊界之數目可為4至14%。
任一實施例之連接線,其中:連接線之(b)/(c)之比可為1.5至8。
此處,(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定
向之晶粒的量,且(c)係指泰勒因子(Taylor factor)。
任一實施例之連接線,其中:晶粒在縱向方向上之平均尺寸可為0.8至1.2μm。
任一實施例之連接線,其中:在線之最終拉製步驟前,線可暴露於中間退火步驟。
任一實施例之連接線,其中:中間退火步驟可進行1至3次。
任一實施例之連接線,其中:中間退火步驟可進行2至3次。
任一實施例之連接線,其中:中間退火步驟可包括第一分批中間退火步驟;第二連續中間退火步驟;及/或第三連續中間退火步驟。
任一實施例之連接線,其中:第一中間退火步驟可在400至800℃下進行50至150分鐘,且可包括冷卻線50至150分鐘之步驟。
任一實施例之連接線,其中:第二中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
任一實施例之連接線,其中:第三中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
任一實施例之連接線,其中:線可藉由垂直連續鑄造方法暴露於鑄造步驟,且垂直連續鑄造方法可在1150至1350℃下進行。
任一實施例之連接線,其中:垂直連續鑄造方法可在4至9cm/min之鑄造速度下進行。
本發明之另一例示性實施例提供微電子組件封裝,該微電子組件封裝包括由如上所述根據本發明之一個實施例之連接線彼此連接之電子裝置及基板。
本發明之又一例示性實施例提供製造連接線之方法,該方法包括提供線原材料;藉由垂直連續鑄造方法鑄造線原材料;依序拉製鑄造線直至達到最終直徑;及使拉製線退火,其中在線之最終拉製步驟前進行1至3次中間退火步驟,且線原材料包括90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質。
製造任一實施例之連接線的方法,其中:摻雜劑可為鈣,且鈣含量可為10至100ppm。
製造任一實施例之連接線的方法,其中:中間退火步驟可包括第一分批中間退火步驟;第二連續中間退火步驟;及/或第三連續中間退火步驟。
製造任一實施例之連接線的方法,其中:第一中間退火步驟可在400至800℃下進行50至150分鐘,且包括冷卻線50至150分鐘之步驟。
製造任一實施例之連接線的方法,其中:第二中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
製造任一實施例之連接線的方法,其中:第三中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
製造任一實施例之連接線的方法,其中:在藉由垂直連續鑄造方法鑄造線原材料中,垂直連續鑄造方法可在1150至1350℃下進行。
製造任一實施例之連接線的方法,其中:垂直連續鑄造方法可在4至9cm/min之鑄造速度下進行。
製造任一實施例之連接線的方法,其中:藉由該方法製造之連接線的(a)/(b)之比可為3至5。
此處,(a)係指在線長度方向上之結晶定向<hkl>中具有<100>定向之晶粒的量,且(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量。
製造任一實施例之連接線的方法,其中:藉由該方法製造之連接線之雙晶粒邊界的數目可為4至14%。
製造任一實施例之連接線的方法,其中:藉由該方法製造之連接線的(b)/(c)之比可為1.5至8。
此處,(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量,且(c)係指泰勒因子。
製造任一實施例之連接線的方法,其中:藉由該方法製造之連接線之晶粒在縱向方向上的平均尺寸可為0.8至1.2μm。
製造任一實施例之連接線的方法,其中:藉由該方法製造之連接線可為根據本發明之各種實施例之連接線。
根據本發明之一個實施例,可提供能夠藉由具有有利的可加工性及不具有相互連接之必要性來降低製造成本之連接線。
此外,可提供具有改良之結合特性之連接線。
此外,可提供具有改良之循環特性之連接線。
另外,可提供能夠解決線之間黏性之連接線。
圖1說明藉由評價根據本發明之一例示性實施例之連接線之循環
特性獲得的資料。
圖2說明藉由評價根據本發明之例示性實施例之連接線之連接特性獲得的相片。
在下文中,將詳細描述本發明之實施例。此等實施例僅藉由舉例方式呈現,且不欲限制本發明。實際上,本發明僅由所附申請專利範圍之類別定義。
發現根據本發明之一個實施例之線解決了前述一或多個目標。此外,發現製造線之方法克服了製造線中的一或多個問題。此外,發現包括本發明之線之系統在另一電氣元件與根據本發明之線之間的界面上較可靠。
本發明之一個實施例之一或多個目標由申請專利範圍獨立項之標的物達成。申請專利範圍獨立項之附屬項表示本發明之較佳態樣,且一或多個前述目標亦由申請專利範圍附屬項之標的物達成。
在本發明之一個實施例中,提供連接線,該連接線包括90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質,其中(a)/(b)之比為3至5。
(a)係指在線長度方向上之結晶定向<hkl>中具有<100>定向之晶粒的量,且(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量。
此處,複合物之所有含量或份額表示為基於重量之份額。特定言之,表示為百分比單位之複合物份額係指wt%,且表示為ppm(百萬分率)之複合物份額係指重量-ppm。與具有預定尺寸及/或定向之晶粒有關之百分比值係指全部粒子數目之份額。
為了確定晶粒尺寸及/或晶粒定向,製造線樣本,且使用EBSD(電子背向散射繞射)量測並評價所製造之線。在下文中,本發明之所主張之特徵的精確定義將參考本發明之例示性實施例之描述。
當任何複合物之份額大於參考材料之所有其他複合物之份額時,複合物為「主要複合物」。
較佳地,主要複合物佔材料總重量之50至100%。
在一較佳實施例中,線包括銀作為主要複合物。
當(a)/(b)之比為至少3至5時,由於晶粒之常量較大,因此可降低連接線之機械特性及電學特性以及根據產品之特性的變化。
更具體而言,摻雜劑可為鈣(Ca)。
鈣含量可為10至100ppm。可藉由使用鈣摻雜劑控制線之偏行及/或蛇形現象。本發明不受該範圍限制,且可視所需要之特性而定選擇適合之含量。
更具體而言,連接線之(b)/(c)之比可為1.5至8。
(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量,且(c)係指泰勒因子。
泰勒因子為用於描述各晶粒之變形行為與晶粒方向之間的關係的因子,且當因子滿足(b)/(c)之比率範圍時可改良連接特性。
更具體而言,連接線之雙晶粒邊界之數目可為4至14%。當雙晶粒邊界之數目滿足該範圍時,可降低受雙晶粒邊界之數目影響之電特性劣化。
更具體而言,晶粒在縱向方向上之平均尺寸可為0.8至1.2μm。
晶粒之尺寸特別均勻,且促成線性質之有利的再現性。
在大部分有利實施例中,晶粒之尺寸之標準差可為0.1至0.5μm。更佳地,晶粒之尺寸標準差可為0.1至0.4μm,或0.1μm至0.25μm。發現當晶粒之尺寸特別均勻時,線之品質及其再現性明顯增
加。
一般而言,晶粒之額外結構(諸如晶粒尺寸及定向)可藉由適當選擇已知製造參數加以調節。製造參數為其他參數,諸如拉製步驟之數目及直徑之減小,包括退火參數,諸如退火溫度及暴露時間。
在本發明之一個較佳實施例中,線可在最終拉製步驟前暴露於中間退火步驟中。中間退火意謂在影響線之微結構之步驟前進行退火。
中間退火步驟可進行1至3次。可藉由三個中間退火步驟改良線之黏性特性。
更具體而言,中間退火步驟可包括第一分批中間退火步驟;第二連續中間退火步驟;及/或第三連續中間退火步驟。
對於特定實例,第一中間退火步驟可在400至800℃下進行50至150分鐘,且可包括冷卻線50至150分鐘之步驟。
對於特定實例,第二中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
對於特定實例,第三中間退火步驟可在100至300rpm之速度下在400至800℃下進行。
中間退火步驟之製程條件可為經由複數個重複實驗獲得之結果,且可影響連接線之特性。
應理解,在連接製程中使用線前將線暴露於退火步驟通常為中間退火步驟或最終退火步驟。最終退火步驟為影響線微結構之線製造過程之最終步驟。最終退火步驟之參數在此項技術中熟知。
當線暴露於最終退火步驟時,中間退火步驟最佳提前進行,且此意謂在線製造過程中進行不同退火步驟中之兩至三者。在拉製步驟中時,影響線之微結構之過程可在中間退火步驟及最終退火步驟之間進行。此過程可特定最佳化本發明之線之晶體結構。
線可藉由垂直連續鑄造方法暴露於鑄造步驟,且垂直連續鑄造方法可在1150至1350℃下進行。
垂直連續鑄造方法為主要鑄造線原材料之方法,且在此項技術中熟知。可在該步驟中將鑄造溫度範圍控制至1150至1350℃。在此情況下,可解決諸如當形成連接線之自由空氣球(FAB)時所引起之蘋果啃咬球狀及蛇皮表層之問題。此外,可降低線之連接特性之中偏離中心球(Off Centered Ball,OCB)的出現。
更具體而言,垂直連續鑄造方法可在4至9cm/min之鑄造速度下進行。在該情況下,可獲得比現有鑄造結構緻密之樹狀結構,且該均一且緻密結構可改良連接特性。
特定言之,本發明之一個實施例係關於細的連接線。觀測到的作用為特別具有控制細線之晶粒尺寸及晶粒定向之優點。在此情況下,「細線」之術語定義為具有在8μm至80μm範圍內之直徑之線。更佳地,根據本發明之細線具有14至25μm之直徑。在細線中,本發明之複合物及退火製程特別有助於獲得有利性質。
儘管並非強制性的,但大多數細線具有實質上圓形的截面視圖。在本發明之上下文中,術語「截面視圖」意謂線之切開表面,且其切開表面垂直於線之縱向方向上之擴展線。截面視圖在線之縱向方向上之擴展線上的任意位置處可見。截面中貫穿線之「最長路徑」為可在截面視圖之平面上貫穿線之截面置放之最長弦。截面中貫穿線之「最短路徑」為上文所定義之截面視圖之平面上垂直於最長路徑之最長弦。當線具有完美的圓形截面時,最長路徑及最短路徑不突出,且共用相同的值。術語「直徑」為在任意平面上及任意方向上所有幾何直徑之算術平均值,且所有平面垂直於線之縱向方向上之擴展線。
本發明之另一實施例係關於微電子組件,該微電子組件包括由根據本發明之一個實施例之連接線彼此連接之電子裝置及基板。
根據本發明之一個實施例之連接線可應用於各種組件封裝,且視所需要組件之特性而定,可部分地控制線之特性。
在本發明之又一實施例中,提供製造連接線之方法。該方法包括提供線原材料;藉由垂直連續鑄造方法鑄造線原材料;依序拉製鑄造線直至達到最終直徑;及在最低退火溫度下使拉製線退火最少退火時間。中間退火步驟在線之最終拉製步驟前進行1至3次,且線原材料包括90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質。
應理解,原材料之拉製可在各個步驟中進行。應理解,線原材料具有根據本發明之一個實施例之線之複合物。可藉由使用藉由熔融限制量之銀且添加限制量之額外複合物形成的均勻混合物簡單獲得線原材料。其後,可藉由任意已知方法使用熔融合金或固化合金鑄造或模製線原材料。
當描述根據本發明之一個實施例之線時,已呈現對線原材料之摻雜劑之描述,且因此,將不呈現對其之描述。
在本發明之一個較佳實施例中,在方法中,中間退火步驟可在線之最終拉製步驟前進行1至3次。
在額外中間退火步驟中,在線之拉製步驟中引起劇烈的機械變形前,最佳化晶體結構。發現中間退火在最後獲得線之微結構中有利。舉例而言,中間退火步驟有助於降低最終產物中之晶粒尺寸之偏差,且有助於改良晶粒之定向。中間退火之參數可經調節以適合於所需要的線參數。
對中間退火之描述如上所述。
此外,對垂直連續鑄造方法之描述如上所述。
製造線之方法之一更佳特定實施例係指結合最佳化退火參數對
本發明之線的描述。
在下文中,描述本發明之一較佳例示性實施例及比較實例。然而,以下例示性實施例僅為本發明之一較佳例示性實施例,且不欲限制本發明。
本發明由例示性實施例更具體例示。例示性實施例呈現本發明之例示性描述,且不欲限制申請專利範圍或本發明之範疇。
合金由以下充分混合之複合物(單位:wt%)製造,該充分混合之複合物藉由熔融預定量之純銀且添加預定量之純金、鈀及鈣來獲得:銀:(94或大於94bal.)%、金:(0.2至2)%、鈀:(1至5)%、鈣(0.001至0.01)%
線原材料藉由將經熔融之混合物鑄造成模製目標物且冷卻模製目標物來獲得。線原材料之直徑為6至10mm。此時,鑄造條件為1200℃,鑄造速度為7cm/min,且冷卻溫度為20℃。
隨後,最終退火藉由進行若干次拉製且進行三個中間退火步驟來進行。
首先,藉由經由第一拉製步驟來拉製具有6mm直徑之線來獲得具有2mm直徑之線。此時,拉製速度為10MPM,且此製程進行約17次。
其後,進行第一中間退火步驟。第一中間退火步驟以分批方式進行,且在400℃下進行退火60分鐘後,冷卻線90分鐘。第一中間退火步驟在Ar條件下進行。
隨後,經由額外拉製步驟獲得直徑自2mm減小至0.4mm之線。此時,拉製速度為30MPM。
其後,經由額外拉製步驟獲得直徑自0.4mm減小至0.1mm之線。此時,拉製速度為100MPM。
其後,經由額外拉製步驟獲得直徑自0.1mm減小至0.05mm之
線。此時,拉製速度為250MPM。
隨後,進行第二中間退火步驟。第二中間退火步驟以連續方式在200rpm下在500℃下進行。
在第二中間退火步驟後,經由額外拉製步驟獲得直徑自0.05mm減小至0.03之線。此時,拉製速度為250MPM。
其後,進行第三中間退火步驟。第三中間退火步驟以連續方式在200rpm下在500℃下進行。
隨後,經由微拉製步驟獲得具有0.7密耳直徑之線。此時,拉製速度為300MPM。
其後,最後進行最終退火。
使用例示性實施例中製造之線檢查定向。
使用EBSD設備進行檢查。經檢查,<100>/<111>之比為3.3。
經檢查,經製造之例示性實施例之雙邊界的數目為9%。
經檢查,經製造之例示性實施例之泰勒因子為2.8,且作為定向<111>之數目對泰勒因子之比的<111>/泰勒因子之值為1.67。
經檢查,經製造之例示性實施例之晶粒尺寸為10μm。
使用根據本發明之例示性實施例獲得之線進行各種測試。
首先,該線與類似於本發明之例示性實施例之線使用銀合金作為基礎材料的現有線相比較。
由Heraeus Holding製造之AgUltra產品用作現有奈米線。
比較量測值包括連接特性、循環特性及解纏繞測試之資料。對線之該等性質進行作為線連接領域中之標準之測試過程。
圖1說明藉由評價根據本發明之例示性實施例之連接線的循環特性獲得之資料。可以看出,與現有產品相比,本發明之例示性實施例
中之蛇形、偏行及短缺陷得到顯著解決。
圖2為藉由評價根據本發明之例示性實施例之連接線的連接特性獲得之相片。
當藉由形成線之FAB(自由空氣球)在連接墊中進行球連接時,連接球形狀之連接直徑需定位於墊子中間,且連接直徑內各側之連接環之長度需恆定。
表1表示圖2之量測資料。A為等級A,且連接直徑定位於連接墊之中心。此外,A意謂連接環之長度在各別位置處恆定相等,且可以看出,當與現有產品相比時,等級A之多種所得產品由本發明製造。
表2表示解纏繞測試之結果。特定地,在將線自由下落50至70cm的同時,評價線之解纏繞特性。當在解纏繞期間線退繞停止且藉由輕輕觸碰線再次退繞時,計數線退繞停止之數目,且另外,當線需要變形時,計數扭結之數目。表3表示7天之評價結果,且可以看出,本發明之例示性實施例之扭結為10至1,000ppm,且其筆直特性及黏性特性得到改良。
本發明不限於例示性實施例,且可以各種不同形式製造。熟習此項技術者應理解,可在不改變本發明之技術精神及基本特徵的情況下以不同的特定形式實施例示性實施例。因此,應理解,上述例示性實施例在所有態樣中為說明性的而非限制性的。
Claims (27)
- 一種連接線,其包括:90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質,其中(a)/(b)之比為3至5:(a)係指在線長度方向上之結晶定向<hkl>中具有<100>定向之晶粒的量,且(b)係指在該線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量。
- 如請求項1之連接線,其中:該等摻雜劑為鈣(Ca)。
- 如請求項2之連接線,其中:該鈣之含量為10至100ppm。
- 如請求項1之連接線,其中:該連接線之雙晶粒邊界之數目為4至14%。
- 如請求項1之連接線,其中:該連接線之(b)/(c)之比為1.5至8:(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量,且(c)係指泰勒因子(Taylor factor)。
- 如請求項1之連接線,其中:該等晶粒在縱向方向上之平均尺寸為0.8至1.2μm。
- 如請求項1之連接線,其中:在該線之最終拉製步驟前,該線暴露於中間退火步驟。
- 如請求項7之連接線,其中:該中間退火步驟進行1至3次。
- 如請求項8之連接線,其中:該中間退火步驟包括第一分批中間退火步驟;第二連續中間退火步驟;及/或第三連續中間退火步驟。
- 如請求項9之連接線,其中:該第一中間退火步驟在400至800℃下進行50至150分鐘,且包括冷卻該線50至150分鐘之步驟。
- 如請求項9之連接線,其中:該第二中間退火步驟在100至300rpm之速度下在400至800℃下進行。
- 如請求項9之連接線,其中:該第三中間退火步驟在100至300rpm之速度下在400至800℃下進行。
- 如請求項1之連接線,其中:該線藉由垂直連續鑄造方法暴露於鑄造步驟,且該垂直連續鑄造方法在1150至1350℃下進行。
- 如請求項13之連接線,其中:該垂直連續鑄造方法在4至9cm/min之鑄造速度下進行。
- 一種微電子組件封裝,其包括由如請求項1至14中任一項之連接線彼此連接之電子裝置及基板。
- 一種製造連接線之方法,其包含:提供線原材料;藉由垂直連續鑄造方法鑄造該線原材料;依序拉製該鑄造線直至達到最終直徑;及使該拉製線退火, 其中在該線之最終拉製步驟前進行1至3次中間退火步驟,及該線原材料包括90.0至99.0wt%之銀(Ag);0.2至2.0wt%之金(Au);0.2至4.0wt%之鈀(Pd)、鉑(Pt)或銠(Rh),或其組合;10至1000ppm之摻雜劑;及不可避免的雜質;且其中該連接線之(a)/(b)之比為3至5:(a)係指在線長度方向上之結晶定向<hkl>中具有<100>定向之晶粒的量,且(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量。
- 如請求項16之製造連接線之方法,其中:該等摻雜劑為鈣,且該鈣之含量為10至100ppm。
- 如請求項16之製造連接線之方法,其中:該中間退火步驟包括第一分批中間退火步驟;第二連續中間退火步驟;及/或第三連續中間退火步驟。
- 如請求項18之製造連接線之方法,其中:該第一中間退火步驟在400至800℃下進行50至150分鐘,且包括冷卻該線50至150分鐘之步驟。
- 如請求項18之製造連接線之方法,其中:該第二中間退火步驟在100至300rpm之速度下在400至800℃下進行。
- 如請求項18之製造連接線之方法,其中:該第三中間退火步驟在100至300rpm之速度下在400至800℃下進行。
- 如請求項18之製造連接線之方法,其中:該第二中間退火步驟及該第三中間退火步驟具有相同的製程條件。
- 如請求項16之製造連接線之方法,其中:在藉由該垂直連續鑄造方法鑄造該線原材料中,該垂直連續鑄造方法在1150至1350℃下進行。
- 如請求項23之製造連接線之方法,其中:該垂直連續鑄造方法在4至9cm/min之鑄造速度下進行。
- 如請求項16之製造連接線之方法,其中:該連接線之雙晶粒邊界的數目為4至14%。
- 如請求項16之製造連接線之方法,其中:該連接線之(b)/(c)之比為1.5至8:(b)係指在線長度方向上之結晶定向<hkl>中具有<111>定向之晶粒的量,且(c)係指泰勒因子。
- 如請求項16之製造連接線之方法,其中:該連接線之晶粒在縱向方向上的平均尺寸為0.8至1.2μm。
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JP2013187508A (ja) * | 2012-03-09 | 2013-09-19 | Tatsuta Electric Wire & Cable Co Ltd | Agボンディングワイヤおよびその製造方法 |
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