CN102437136A - 一种键合合金丝及其生产工艺 - Google Patents

一种键合合金丝及其生产工艺 Download PDF

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CN102437136A
CN102437136A CN2011103625311A CN201110362531A CN102437136A CN 102437136 A CN102437136 A CN 102437136A CN 2011103625311 A CN2011103625311 A CN 2011103625311A CN 201110362531 A CN201110362531 A CN 201110362531A CN 102437136 A CN102437136 A CN 102437136A
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gold
base material
bonding
wire
bonding alloy
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CN102437136B (zh
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薛子夜
周钢
赵碎孟
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ZHEJIANG GPILOT TECHNOLOGY Co Ltd
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Abstract

本发明是一种键合合金丝及其生产工艺。键合合金丝包括基材及镀在基材表面的镀层,其中基材为总纯度≥99.9%的银材,且银材中添加有合金元素Ca、Pd、Au,镀层为黄金。本发明键合合金丝的生产工艺包括如下过程:1)将银及合金元素组成的基材进行熔铸;2)将熔铸后的基材进行大拉丝;3)在大拉丝后的基材表面镀金;4)将表面镀金后的基材进行再拉丝;5)将上述再拉丝的镀金基材进行退火工艺处理即得所需键合金丝。本发明以高纯银材为基础,添加合金元素,并在银材表面镀有黄金,其可以大幅度降低成本,同线径的导电率高于传统键合金丝。本发明的键合合金丝适用于集成电路、大规模集成电路微型化封装,也适用于分立器件、LED封装。本发明键合合金丝的生产工艺方便实用。

Description

一种键合合金丝及其生产工艺
技术领域
本发明是一种可适用于集成电路、也适用于分立器件、LED封装的键合合金丝及其生产工艺,属于键合金丝及其生产工艺的改造技术。
背景技术
现有的黄金键合金丝存在的缺点是生产成本高,价格高昂,直接影响生产企业的经济效益,也直接影响其推广应用。黄金价格随着国际形势飞速猛涨,由去年同期的250元/克涨到现在的350元/克,价格增长了40%,例如一卷500米长,直径为25微米的金线,去年同期价格为1000元左右,现在价格为:1400元左右,而封装行业产品中,金线在整个产品中的比重为30%左右,就是说,总体产品成本增长了12%,而现实市场封装产品的价格却只降不升。封装行业企业生产的利润空间一般为15%-20%,这样被压缩了12%,是任何企业都无法承受的。所以,新产品的呼声一浪高过一浪。
键合银丝具有明显的价格优势,一卷直径为25微米的键合银丝价格仅为200元左右,是键合金丝价格的七分之一。大大降低了企业生产成本。且白银的导电率大于黄金,同规格的键合银丝熔断电流大于金丝,制成产品的发热率低,利于提高产品使用寿命。
发明内容
本发明的目的在于考虑上述问题而提供一种可大幅度降低成本,且导电率高的键合丝。
本发明的另一目的在于提供一种操作方便的键合丝的生产工艺。
本发明的技术方案是:本发明的键合合金丝,包括有基材及镀在基材表面的镀层,其中基材为总纯度≥99.9%的银材,且银材中添加有合金元素钙、钯、金,镀层为黄金。
上述基材中还添加有铟、镍、铜、铈、钇、铝或镁,含量分别为:5-100ppm。
上述基材中添加的每种合金元素钙、钯或金,含量含量分别为:5-100ppm。
上述基材表面镀有的黄金的膜厚为基材直径的0.4%-0.8%。
上述基材表面镀有的黄金的膜厚为0.01-0.2微米,基材的直径大,基材表面镀有的黄金的膜厚也大,基材的直径小,基材表面镀有的黄金的膜厚也小。
本发明的键合合金丝的生产工艺,包括如下过程:
1)将银及合金元素组成的基材进行熔铸;使用连铸炉,熔铸温度为1200℃,引出速度为60mm/min。直接将块材制成Φ7mm合金银棒。
2)将熔铸后的Φ7mm合金银棒基材进行大拉丝;使用连续拉丝机,模具加工率为12%,拉制到Φ0.5mm丝材。
3)在大拉丝后的丝材表面镀金;要求镀软金,采用线式直镀方法。
4)将表面镀金后的基材进行再拉丝;使用多台连续拉丝机,模具加工率为9%,按照客户需求,拉制到Φ0.025mm、Φ0.023mm、Φ0.020mm、Φ0.018mm等规格丝材。
5)将上述再拉丝的镀金基材进行退火工艺处理即得所需键合金丝。使用线式退火炉,退火温度为300-400℃,将丝材退火至软态。退火时需要高纯氮气保护。
退火性能要求。(使用拉力测试仪,预置长度100mmm,拉伸速度12mm/min)
Figure BSA00000613411200021
上述退火工艺后还设置绕线工艺。绕线长度为500m/卷或1000m/卷。
上述绕线工艺后还设置真空封装工艺。
上述步骤4)的再拉丝工艺包括有中拉、细拉、超微细拉伸。
上述步骤5)的退火工艺处理包括有成品退火、性能测试、防氧化气体保护处理过程。
本发明由于采用以高纯银材为基础,添加合金元素,并在银材表面镀有起到防氧化作用的黄金的结构,因此,其可以大幅度降低成本,价格仅为键合金丝的15%-30%,同线径的导电率高于传统键合金丝。本发明制成的键合合金丝表面为金黄色,外观与传统键合金丝完全一致。本发明制造的产品适用于集成电路、大规模集成电路微型化封装要求,也适用于分立器件、LED封装的低成本要求。本发明键合合金丝的生产工艺方便实用。
已有键合银丝专利产品:200910017009.2键合银丝及其制备方法、201110128217.7银基微合金键合丝及其制备方法。与本产品的根本区别在于是否有镀金保护层。无保护层的银丝,在键合后由于余温的存在,其表面会生成氧化银,在制成封装产品后,氧化银会进一步扩散,影响产品品质及寿命。而镀金层正好可以防止氧化银的产生,提高产品品质。
在已有专利,一种银基覆金的键合丝线及其制造方法,专利号200910152916.8,中,要求银的纯度≥99.9995%,金的纯度≥99.999%,是没有任何添加元素的产品。而此专利申请要求银纯度≥99.9%,电镀软金纯度≥99%。
我们通过对市场了解,对200910152916.8专利所生产的产品使用者进行确认,发现,200910152916.8专利产品在键合过程中存在很大缺陷。由于高纯银的成球性能极差,不利于键合。所以致使其产品在使用时存在以下缺陷:
1、键合时必须使用保护气体,否则焊接不牢固;
2、键合时机台键合参数需要调的很大,否则无法焊接;键合参数调高后,容易造成打碎芯片等缺陷,造成产品不良。
3、滑球严重,造成漏电,致使产品不良。
本发明产品,添加微量元素,可以改善丝材焊接性能,使材料软化,便于键合;同时可以改善银材的成球性能,减少滑球。
使用微恒公司自动键合机,Φ20微米线材焊接参数对比
Figure BSA00000613411200041
具体实施方式
实施例1:
本发明的键合合金丝,包括有基材及镀在基材表面的镀层,其中基材为总纯度≥99.9%的银材,且银材中添加有合金元素钙、钯、金,镀层为黄金。
上述基材中还添加有铟、镍、铜、铈、钇、铝、镁。
上述基材中添加的每种合金元素钙、钯、金的含量为:5-100ppm。ppm是指金属含量的单位,1ppm=0.0001%含量,每种合金元素在实际添加时有的多有的少,主要是按照其在合金中所起到的作用而定。
本实施例中,添加的合金元素的含量如下,单位为ppm:
钙=10
钯=50
金=30
铟=30
镍=10
铈=30
上述基材表面镀有的黄金的膜厚与基材的直径有直接关联,基材的直径大,基材表面镀有的黄金的膜厚也大,基材的直径小,基材表面镀有的黄金的膜厚也小。基材表面镀有的黄金的膜厚一般为基材直径的0.4%-0.8%。
上述基材表面镀有的黄金的膜厚为0.01-0.2微米,本实施例中,基材的直径为Φ25微米,镀膜厚度为0.15微米,当基材的直径为Φ23微米时,镀膜厚度为0.14微米。
本发明的键合合金丝的生产工艺,包括如下过程:
1)将银及合金元素组成的基材进行熔铸;
2)将熔铸后的基材进行大拉丝;
3)在大拉丝后的基材表面镀金;
4)将表面镀金后的基材进行再拉丝;
5)将上述再拉丝的镀金基材进行退火工艺处理即得所需键合金丝。
上述退火工艺后还设置绕线工艺。
上述绕线工艺后还设置真空封装工艺。
上述步骤4)的再拉丝工艺包括有中拉、细拉、超微细拉伸。
上述步骤5)的退火工艺处理包括有成品退火、性能测试、防氧化气体保护处理过程。
本发明键合合金丝的生产工艺,其包括如下过程:
1)将银及合金元素组成的基材进行熔铸;
2)将熔铸后的基材进行大拉丝;
3)在大拉丝后的基材表面镀金;
4)将表面镀金后的基材进行再拉丝;
5)将上述再拉丝的镀金基材进行退火工艺处理即得所需键合金丝。
上述退火工艺后还设置绕线工艺。
退火性能如下
采用拉力测试仪,预置长度100mm,拉伸速度12mm/min。与键合金丝一致。
以线径Φ23微米为例
  延伸率%   抗拉强度cN   最小熔断电
  流
  键合金丝   3-5%   8.0-9.0   0.35A
  键合合金丝   11-14%   8.5-9.2   0.41A
上述绕线工艺后还设置真空封装工艺。
上述步骤4)的再拉丝工艺包括有中拉、细拉、超微细拉伸。
上述步骤5)的退火工艺处理包括有成品退火、性能测试、防氧化气体保护处理过程。
实施例2:
本发明实施例与实施例1的不同之处在于基材中添加如下合金,添加的合金元素的含量如下,单位为ppm:
钙=8
钯=15
金=25
铟=10
铜=10
钇=20
铝=30
镁=10
本实施例中,基材的直径为
Figure BSA00000613411200061
微米,镀膜厚度为0.10微米,基材的直径为
Figure BSA00000613411200062
微米时,镀膜厚度为0.08微米。
退火性能如下
采用拉力测试仪,预置长度100mm,拉伸速度12mm/min。与键合金丝一致。
以线径Φ20微米为例
实施例3:
本发明实施例与实施例1、2的不同之处在于基材中添加如下合金,添加的合金元素含量如下,单位为ppm:
钙=40
金=80
铟=40
铈=30
镁=25
本实施例中,基材的直径为Φ25微米,镀膜厚度为0.15微米,基材直径为Φ23微米时,镀膜厚度为0.14微米。
退火性能如下
采用拉力测试仪,预置长度100mm,拉伸速度12mm/min。与键合金丝一致。
以线径Φ25微米为例
Figure BSA00000613411200072

Claims (10)

1.一种键合合金丝,包括有基材及镀在基材表面的镀层,其特征在于基材为总纯度≥99.9%的银材,且银材中添加有合金元素钙、钯、金,镀层为黄金。
2.根据权利要求1所述的键合合金丝,其特征在于上述基材中还添加有铟、镍、铜、铈、钇、铝、镁。
3.根据权利要求1所述的键合合金丝,其特征在于上述基材中添加的每种合金元素钙、钯、金的含量为:5-100ppm。
4.根据权利要求1所述的键合合金丝,其特征在于上述基材表面镀有的黄金的膜厚为基材直径的0.4%-0.8%。
5.根据权利要求4所述的键合合金丝,其特征在于上述基材表面镀有的黄金的膜厚为0.01-0.2微米,基材的直径大,基材表面镀有的黄金的膜厚也大,基材的直径小,基材表面镀有的黄金的膜厚也小。
6.一种根据权利要求1所述的键合合金丝的生产工艺,其特征在于包括如下过程:
1)将银及合金元素组成的基材进行熔铸;
2)将熔铸后的基材进行大拉丝;
3)在大拉丝后的基材表面镀金;
4)将表面镀金后的基材进行再拉丝;
5)将上述再拉丝的镀金基材进行退火工艺处理即得所需键合金丝。
7.根据权利要求1所述的键合合金丝的生产工艺,其特征在于上述退火工艺后还设置绕线工艺。
8.根据权利要求5所述的键合合金丝的生产工艺,其特征在于上述绕线工艺后还设置真空封装工艺。
9.根据权利要求5所述的键合合金丝的生产工艺,其特征在于上述步骤4)的再拉丝工艺包括有中拉、细拉、超微细拉伸。
10.根据权利要求5所述的键合合金丝的生产工艺,其特征在于上述步骤5)的退火工艺处理包括有成品退火、性能测试、防氧化气体保护处理过程。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479241A (ja) * 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP2001176912A (ja) * 1999-12-16 2001-06-29 Noge Denki Kogyo:Kk 金被覆した銀線ボンディングワイヤ
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0479241A (ja) * 1990-07-20 1992-03-12 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP2001176912A (ja) * 1999-12-16 2001-06-29 Noge Denki Kogyo:Kk 金被覆した銀線ボンディングワイヤ
CN101667566A (zh) * 2009-09-20 2010-03-10 宁波康强电子股份有限公司 一种银基覆金的键合丝线及其制造方法

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