TWI594844B - Chemical mechanical polishing device and grinding device polishing pad partial wear detection method - Google Patents

Chemical mechanical polishing device and grinding device polishing pad partial wear detection method Download PDF

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Publication number
TWI594844B
TWI594844B TW103111190A TW103111190A TWI594844B TW I594844 B TWI594844 B TW I594844B TW 103111190 A TW103111190 A TW 103111190A TW 103111190 A TW103111190 A TW 103111190A TW I594844 B TWI594844 B TW I594844B
Authority
TW
Taiwan
Prior art keywords
polishing
polishing pad
value
detecting
change
Prior art date
Application number
TW103111190A
Other languages
English (en)
Chinese (zh)
Other versions
TW201446419A (zh
Inventor
小菅隆一
曾根忠一
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW201446419A publication Critical patent/TW201446419A/zh
Application granted granted Critical
Publication of TWI594844B publication Critical patent/TWI594844B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW103111190A 2013-03-29 2014-03-26 Chemical mechanical polishing device and grinding device polishing pad partial wear detection method TWI594844B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013072399A JP6113552B2 (ja) 2013-03-29 2013-03-29 研磨装置及び摩耗検知方法

Publications (2)

Publication Number Publication Date
TW201446419A TW201446419A (zh) 2014-12-16
TWI594844B true TWI594844B (zh) 2017-08-11

Family

ID=51592265

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103111190A TWI594844B (zh) 2013-03-29 2014-03-26 Chemical mechanical polishing device and grinding device polishing pad partial wear detection method

Country Status (5)

Country Link
US (2) US9144878B2 (https=)
JP (1) JP6113552B2 (https=)
KR (1) KR102014274B1 (https=)
CN (1) CN104070445B (https=)
TW (1) TWI594844B (https=)

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CN105500183B (zh) * 2015-11-26 2018-08-10 上海集成电路研发中心有限公司 一种研磨垫及其使用周期检测方法
CN107471113B (zh) * 2016-06-08 2019-12-27 中芯国际集成电路制造（天津）有限公司 研磨垫修整器及研磨垫修整方法
JP6753247B2 (ja) 2016-09-27 2020-09-09 オムロン株式会社 制御装置、制御プログラムおよび制御方法
JP6484286B2 (ja) * 2017-05-12 2019-03-13 ファナック株式会社 ワイヤ放電加工機および表示方法
CN107971931B (zh) * 2017-11-24 2019-12-03 上海华力微电子有限公司 一种化学机械研磨垫磨损的检测装置及工作方法
JP7098311B2 (ja) * 2017-12-05 2022-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
JP6970601B2 (ja) * 2017-12-06 2021-11-24 株式会社荏原製作所 半導体製造装置の設計方法
KR102279523B1 (ko) * 2018-01-30 2021-07-20 주식회사 케이씨텍 브러쉬 세정 장치
CN108296931B (zh) * 2018-02-02 2024-06-21 成都精密光学工程研究中心 一种带磨损补偿的偏摆式平面抛光装置
US10967480B2 (en) * 2018-10-29 2021-04-06 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and methods for chemical mechanical polishing
CN110116365A (zh) * 2019-06-25 2019-08-13 吉姆西半导体科技（无锡）有限公司 化学机械研磨设备机台监控系统
CN110363756A (zh) * 2019-07-18 2019-10-22 佛山市高明金石建材有限公司 一种用于磨头的磨损检测系统及检测方法
JP7374710B2 (ja) * 2019-10-25 2023-11-07 株式会社荏原製作所 研磨方法および研磨装置
JP7220648B2 (ja) * 2019-12-20 2023-02-10 株式会社荏原製作所 基板処理装置および基板処理方法
CN112454159A (zh) * 2020-11-26 2021-03-09 华虹半导体(无锡)有限公司 化学机械研磨工艺异常报警处理方法、程式及装置
CN115401597A (zh) * 2021-05-26 2022-11-29 天工精密股份有限公司 钢珠研磨机的健康损坏预测系统
CN113334238A (zh) * 2021-06-22 2021-09-03 上海华虹宏力半导体制造有限公司 化学机械研磨的控制方法和设备
CN114536162B (zh) * 2022-03-04 2022-12-13 嘉兴学院 一种机器人制造用打磨机抛光砂轮耗损检测装置
CN116967926A (zh) * 2023-09-11 2023-10-31 北京晶亦精微科技股份有限公司 基于修整器的扫描电机扭矩的抛光垫使用寿命监测方法
CN117260407B (zh) * 2023-11-20 2024-03-12 铭扬半导体科技(合肥)有限公司 一种抛光设备的检测方法
CN118595910B (zh) * 2024-07-01 2024-11-22 宁波意尔达五金工贸有限公司 一种传动轴智能磨削系统

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JPH11207572A (ja) * 1997-11-05 1999-08-03 Aplex Inc 研磨パッドの摩耗監視手段を組み込んだ研磨装置及びその操作方法
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Also Published As

Publication number Publication date
JP6113552B2 (ja) 2017-04-12
TW201446419A (zh) 2014-12-16
CN104070445A (zh) 2014-10-01
US9144878B2 (en) 2015-09-29
US20140295737A1 (en) 2014-10-02
CN104070445B (zh) 2018-02-13
US9530704B2 (en) 2016-12-27
KR102014274B1 (ko) 2019-08-26
US20150364391A1 (en) 2015-12-17
KR20140118903A (ko) 2014-10-08
JP2014195847A (ja) 2014-10-16

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