TWI594809B - Thin film formation method and thin film formation apparatus - Google Patents
Thin film formation method and thin film formation apparatus Download PDFInfo
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本發明是關於在基板塗抹液狀的薄膜材料之後,藉使其硬化,形成薄膜的薄膜形成方法及薄膜形成裝置。 The present invention relates to a film forming method and a film forming apparatus for forming a film by applying a liquid film material to a substrate and then curing the film material.
從噴頭(噴射頭)吐出液狀的薄膜材料,使塗抹在基板的薄膜材料硬化,藉此形成薄膜的技術為人所知(例如專利文獻1)。該薄膜形成技術是例如運用在印刷基板的抗焊劑的形成、層疊基板的層間絕緣膜的形成等。 A technique of forming a film by ejecting a liquid film material from a head (jet head) and curing the film material applied to the substrate is known (for example, Patent Document 1). The film forming technique is, for example, formation of a solder resist applied to a printed substrate, formation of an interlayer insulating film of a laminated substrate, and the like.
薄膜材料是使用光硬化性樹脂(例如,紫外線硬化性樹脂)。將薄膜材料液滴化後塗抹於基板時,薄膜材料朝著面內方向擴散。為了提升形成在基板的薄膜圖形的清晰度,以在薄膜材料的彈著後,迅速使薄膜材料硬化為佳。但是,在將薄膜材料塗抹於整體的區域中,薄膜材料的彈著後,迅速使得薄膜材料硬化時,對應各個的液滴,在薄膜的表面會出現凹凸。 The film material is a photocurable resin (for example, an ultraviolet curable resin). When the film material is dropletized and applied to the substrate, the film material spreads in the in-plane direction. In order to enhance the sharpness of the film pattern formed on the substrate, it is preferable to quickly harden the film material after the film material is bounced. However, when the film material is applied to the entire region, after the film material is elasticized, the film material is quickly hardened, and irregularities are formed on the surface of the film corresponding to the respective droplets.
可減輕薄膜的表面凹凸的薄膜形成方法是揭 示在專利文獻2。該方法是首先沿著應形成薄膜的區域邊緣,形成邊緣圖形。在比邊緣圖形的內側塗抹液狀的薄膜材料,以液狀的薄膜材料包覆薄膜形成區域。在液狀的薄膜材料表面呈平坦之後,使薄膜材料硬化,形成薄膜。藉此,可形成表面平坦的薄膜。 A film forming method capable of reducing surface unevenness of a film is disclosed It is shown in patent document 2. The method is to first form an edge pattern along the edge of the area where the film should be formed. A liquid film material is applied to the inner side of the edge pattern, and the film formation region is covered with a liquid film material. After the surface of the liquid film material is flat, the film material is hardened to form a film. Thereby, a film having a flat surface can be formed.
[專利文獻1]日本特許第3544543號公報 [Patent Document 1] Japanese Patent No. 3544543
[專利文獻2]國際公開第2013/011775號 [Patent Document 2] International Publication No. 2013/011775
形成表面平坦的薄膜的習知的方法中,首先,必須依序執行:形成邊緣圖形的步驟;以液狀的薄膜材料包覆較邊緣圖形內側的薄膜形成區域的步驟;及使液狀的薄膜材料硬化的步驟。因此,用於形成薄膜得所需時間會變長。 In a conventional method of forming a film having a flat surface, first, it is necessary to sequentially perform a step of forming an edge pattern, a step of coating a film formation region on the inner side of the edge pattern with a liquid film material, and a liquid film. The step of hardening the material. Therefore, the time required for forming a film becomes long.
本發明為提供薄膜形成方法及薄膜成形裝置,可抑制用於薄膜形成之所需時間的增大,並可形成表面的凹凸減輕的薄膜。 The present invention provides a film forming method and a film forming apparatus which can suppress an increase in time required for film formation and can form a film having reduced surface unevenness.
根據本發明之一觀點時,提供一種薄膜形成 方法,具有:在基板彈著液狀的薄膜材料之後,將彈著後的上述薄膜材料硬化至第1硬化度為止,藉此形成第1薄膜部份的步驟;使一部份與上述第1薄膜部份重疊地,將液狀的上述薄膜材料彈著後,重新使彈著後的上述薄膜材料硬化至第2硬度為止,藉此形成第2薄膜部份的步驟;及在上述第1薄膜部份與上述第2薄膜部份的邊界不能分辨之後,將上述第1薄膜部份及上述第2薄膜部份硬化至比上述第1硬化度及上述第2硬化度其中之一硬化度都高的第3硬化度為止的步驟。 According to one aspect of the present invention, a film formation is provided The method comprises the steps of: forming a first film portion after the elastic film material is bounced on the substrate, and then curing the film material after the filming to the first curing degree; a step of forming a second film portion by buffing the film material in a liquid state, and re-hardening the film material after the filming to the second hardness; and the first film After the boundary between the portion and the second film portion is indistinguishable, the first film portion and the second film portion are cured to be higher than one of the first curing degree and the second curing degree. The steps up to the third degree of hardening.
根據本發明其他的觀點時,提供一種薄膜形成裝置,具有:載台,保持著基板;至少兩個噴頭,設有和保持在上述載台的上述基板相對,朝著上述基板,使光硬化性的薄膜材料液滴化後吐出的複數個噴嘴孔;至少三個硬化用光源,與上述基板相對,對附著在上述基板的上述薄膜材料照射硬化用的光;移動機構,對上述噴頭及上述硬化用光源,使上述基板相對地移動,控制裝置,控制上述硬化用光源,使附著在上述基板的液狀的上述薄膜材料通過與複數的上述硬化用光源分別相對的位置時,藉來自上述硬化用光源的光獲得上述薄膜 材料不同的硬化度,上述控制裝置控制上述噴頭、上述硬化用光源及上述移動機構,使上述基板在掃描方向一邊移動,一邊從上述噴嘴孔吐出上述薄膜材料,對附著在上述基板的上述薄膜材料照射硬化用的光形成薄膜的方式控制上述噴頭、上述硬化用光源及上述移動機構時,在保持於上述載台的上述基板,從上述噴嘴孔彈著液狀的上述薄膜材料之後,對彈著後的上述薄膜材料從上述硬化用光源的至少其中之一照射光,藉此硬化至第1硬化度為止,形成第1薄膜部份,使一部份與第1薄膜部份重疊地將來自上述噴嘴孔的液狀的上述薄膜材料彈著後,重新對彈著後的上述薄膜材料從上述硬化用光源的至少其中之一照射光,藉此硬化至第2硬度為止,形成第2薄膜部份,在上述第1薄膜部份與上述第2薄膜部份的邊界不能分辨之後,對上述第1薄膜部份及上述第2薄膜部份從上述硬化用光源的至少其中之一照射光,藉以使上述第1薄膜部份與上述第2薄膜部份硬化至比上述第1硬化度及上述第2硬化度其中之一硬化度都高的第3硬化度。 According to another aspect of the present invention, a film forming apparatus comprising: a stage holding a substrate; and at least two heads provided opposite to the substrate held on the stage, facing the substrate, and being photocurable a plurality of nozzle holes that are discharged after the film material is dropletized; at least three light sources for curing are opposed to the substrate, and the film material adhering to the substrate is irradiated with light for curing; a moving mechanism for the head and the hardening The light source is used to relatively move the substrate, and the control device controls the light source for curing to cause the liquid film material adhering to the substrate to pass through the plurality of hardening light sources. Light from the light source obtains the above film The control device controls the head, the curing light source, and the moving mechanism to move the substrate in the scanning direction while discharging the film material from the nozzle hole to adhere the film material to the substrate. When the light-receiving light-forming film is used to control the head, the light-receiving light source, and the moving mechanism, the liquid-like film material is bounced from the nozzle hole on the substrate held by the stage, and then the film is bounced. The film material is irradiated with light from at least one of the curing light sources, thereby curing to a first curing degree, and forming a first film portion so that a portion overlaps with the first film portion from the above After the liquid film material of the nozzle hole is bounced, the film material is again irradiated with light from at least one of the curing light source, thereby curing to the second hardness to form the second film portion. After the boundary between the first film portion and the second film portion is indistinguishable, the first film portion and the second thin portion are And irradiating light to at least one of the light source for curing, wherein the first film portion and the second film portion are hardened to be harder than one of the first curing degree and the second curing degree High third degree of hardening.
在第1薄膜部份與第2薄膜部份的邊界成為不能分辨之後,硬化至第3硬化度為止,藉此形成薄膜,因此可減輕薄膜表面的凹凸。且,不需事先形成邊緣圖形 等,因此可防止用於形成薄膜所需時間的增大。 After the boundary between the first film portion and the second film portion is indistinguishable, the film is cured until the third curing degree, whereby the film is formed, so that unevenness on the surface of the film can be reduced. And no need to form edge graphics in advance Etc. Therefore, an increase in the time required for forming a film can be prevented.
20‧‧‧基台 20‧‧‧Abutment
21‧‧‧移動機構 21‧‧‧Mobile agencies
22‧‧‧載台 22‧‧‧
30‧‧‧噴嘴單元 30‧‧‧Nozzle unit
31‧‧‧底板 31‧‧‧floor
32‧‧‧噴頭 32‧‧‧ sprinkler
33‧‧‧噴嘴孔 33‧‧‧Nozzle hole
40‧‧‧第1硬化用光源 40‧‧‧1st hardening light source
41‧‧‧第2硬化用光源 41‧‧‧2nd hardening light source
50‧‧‧控制裝置 50‧‧‧Control device
60‧‧‧基板 60‧‧‧Substrate
61‧‧‧薄膜形成區域 61‧‧‧ Film formation area
62‧‧‧開口 62‧‧‧ openings
64‧‧‧第1假設直線 64‧‧‧1st assumed line
65‧‧‧第2假設直線 65‧‧‧2nd hypothetical line
70‧‧‧薄膜 70‧‧‧ film
71‧‧‧液狀的薄膜材料 71‧‧‧Liquid film material
72‧‧‧第1薄膜部份 72‧‧‧1st film part
72a‧‧‧皮膜 72a‧‧‧ film
73‧‧‧液狀的薄膜材料 73‧‧‧Liquid film material
74‧‧‧第2薄膜部份 74‧‧‧2nd film part
74a‧‧‧皮膜 74a‧‧‧ film
76‧‧‧液狀的薄膜材料 76‧‧‧Liquid film material
77‧‧‧第1薄膜部份 77‧‧‧1st film section
78‧‧‧液狀的薄膜材料 78‧‧‧Liquid film material
79‧‧‧第2薄膜部份 79‧‧‧2nd film section
80‧‧‧液狀的薄膜 80‧‧‧Liquid film
81‧‧‧薄膜 81‧‧‧film
85‧‧‧第3薄膜部份 85‧‧‧3rd film section
85a‧‧‧皮膜 85a‧‧ ‧ film
86‧‧‧第4薄膜部份 86‧‧‧4th film part
86a‧‧‧皮膜 86a‧‧ ‧ film
87‧‧‧薄膜 87‧‧‧film
88‧‧‧薄膜部份 88‧‧‧ film part
89‧‧‧薄膜 89‧‧‧film
90‧‧‧薄膜部份 90‧‧‧ film part
91、92‧‧‧薄膜 91, 92‧‧‧ film
第1圖為藉實施例之薄膜形成裝置的概略前視圖。 Fig. 1 is a schematic front view of a film forming apparatus according to an embodiment.
第2A圖為噴嘴單元的透視圖,第2B圖為噴嘴單元的底視圖。 Fig. 2A is a perspective view of the nozzle unit, and Fig. 2B is a bottom view of the nozzle unit.
第3圖為載台、基板及噴嘴單元的上視圖。 Figure 3 is a top view of the stage, substrate and nozzle unit.
第4圖表示應形成於基板的薄膜的上面形狀之一例的上視圖。 Fig. 4 is a top view showing an example of the shape of the upper surface of the film to be formed on the substrate.
第5A圖是基板與噴嘴單元的側視圖,第5B圖是彈著於基板後的薄膜材料的上視圖。 Fig. 5A is a side view of the substrate and the nozzle unit, and Fig. 5B is a top view of the film material after being bounced on the substrate.
第6A圖~第6E圖是藉實施例的薄膜形成方法之中途階段的基板的剖視圖,第6F圖為形成有薄膜的基板的剖視圖。 6A to 6E are cross-sectional views of the substrate in the middle of the film forming method of the embodiment, and FIG. 6F is a cross-sectional view of the substrate on which the thin film is formed.
第7A圖是藉比較例1的薄膜形成方法形成薄模時之基板、噴頭、第1硬化用光源及第2硬化用光源的側視圖,第7B圖~第7D圖是藉比較例1的薄膜形成方法之中途階段的基板的剖視圖,第7E圖是藉比較例1的薄膜形成方法形成薄膜之基板的剖視圖。 7A is a side view of the substrate, the head, the first curing light source, and the second curing light source when the thin film forming method of Comparative Example 1 is used, and FIGS. 7B to 7D are the film of Comparative Example 1. A cross-sectional view of the substrate in the middle of the formation method, and FIG. 7E is a cross-sectional view of the substrate on which the thin film is formed by the thin film formation method of Comparative Example 1.
第8A圖是藉比較例2的薄膜形成方法形成薄模時之基板、噴頭、第1硬化用光源及第2硬化用光源的側視圖,第8B圖~第8D圖是藉比較例2的薄膜形成方法之中途階段的基板的剖視圖,第8E圖是藉比較例2的薄膜形 成方法形成薄膜之基板的剖視圖。 8A is a side view of the substrate, the head, the first curing light source, and the second curing light source when the thin film forming method of Comparative Example 2 is formed, and FIGS. 8B to 8D are the film of Comparative Example 2. A cross-sectional view of the substrate in the middle of the formation method, and FIG. 8E is a film shape of Comparative Example 2. A cross-sectional view of a substrate into which a film is formed.
第9A圖~第9C圖是藉其他實施例的薄膜形成方法的中途階段之基板的剖視圖。 9A to 9C are cross-sectional views of the substrate in the middle of the film forming method of the other embodiment.
第9D圖~第9E圖是藉其他實施例的薄膜形成方法的中途階段之基板的剖視圖。 9D to 9E are cross-sectional views of the substrate in the middle of the film forming method of the other embodiment.
第10A圖~第10F圖為第9A圖~第9E圖表示藉實施例的薄膜形成方法的中途階段之基板的剖視圖,第9F圖為第9A圖~第9E圖表示藉實施例的薄膜形成方法形成薄膜之基板的剖視圖。 10A to 10F are sectional views of the substrate in the middle of the thin film forming method of the embodiment, and FIG. 9F is a 9A to 9E drawing showing the thin film forming method by the embodiment. A cross-sectional view of a substrate on which a film is formed.
第1圖表示藉實施例之薄膜形成裝置的概略前視圖。在基台20之上透過移動機構21支撐著載台22。定義xyz正交座標系使x軸及y軸朝著水平方向,Z軸朝向垂直上方。移動機構21是藉控制裝置50控制,使載台22在x方向及y方向移動。再者,移動機構21也可具有以和z軸平行的方向為旋轉中心使載台22旋轉方向的姿勢變化的功能。 Fig. 1 is a schematic front view showing a film forming apparatus according to an embodiment. The stage 22 is supported by the moving mechanism 21 on the base 20 . The xyz orthogonal coordinate system is defined such that the x-axis and the y-axis are oriented in the horizontal direction and the Z-axis is oriented vertically upward. The moving mechanism 21 is controlled by the control device 50 to move the stage 22 in the x direction and the y direction. Further, the moving mechanism 21 may have a function of changing the posture in the rotation direction of the stage 22 with the direction parallel to the z-axis as the center of rotation.
在載台22的上面(保持面),保持著應形成薄膜的基板60。基板60是例如藉真空吸盤固定於載台22。在載台22的上方可自由升降地支撐著噴嘴單元30。噴嘴單元30包括複數個噴頭。噴頭具有與基板60相對的複數個噴嘴孔。從各噴嘴孔朝向基板60的表面使薄膜材料液滴化後吐出。薄膜材料的吐出是藉控制裝置50來控 制。液狀的薄膜材料是使用光硬化性樹脂(例如,紫外線硬化性樹脂)。 On the upper surface (holding surface) of the stage 22, the substrate 60 on which the thin film is to be formed is held. The substrate 60 is fixed to the stage 22 by, for example, a vacuum chuck. The nozzle unit 30 is supported by the upper and lower sides of the stage 22 so as to be freely movable. The nozzle unit 30 includes a plurality of nozzles. The showerhead has a plurality of nozzle apertures opposite the substrate 60. The film material is dropletized from the nozzle holes toward the surface of the substrate 60, and then discharged. The discharge of the film material is controlled by the control device 50 system. The liquid film material is a photocurable resin (for example, an ultraviolet curable resin).
第1圖中,表示將噴嘴單元30靜止於基台 20,使基板60移動的例,但相反地,也可以將基板60靜止於基台20,使噴嘴單元30移動。如上述,只要使基板60與噴嘴單元30的一方相對於另一方相對移動的構成即可。 In Fig. 1, it is shown that the nozzle unit 30 is stationary on the base station. 20, an example in which the substrate 60 is moved, but conversely, the substrate 60 may be stationary on the base 20 to move the nozzle unit 30. As described above, the substrate 60 and the nozzle unit 30 may be relatively moved relative to each other.
第2A圖表示噴嘴單元30的透視圖,在底板 31上,朝y方向排列安裝有複數,例如2個噴頭32。噴頭32分別具有排列於x方向的複數個噴嘴孔33。與y方向相鄰的兩個噴頭32之間,及比兩端的噴頭32更外側,分別安裝有第1硬化光源40。在比最外側的第1硬化用光源40的更外側,分別安裝有第2硬化用光源41。第1硬化用光源40及第2硬化用光源41是對附著在基板60(第1圖)的薄膜材料照射硬化用的光(例如紫外線)。 Figure 2A shows a perspective view of the nozzle unit 30, in the bottom plate On the 31st, a plurality of, for example, two heads 32 are arranged in the y direction. The heads 32 each have a plurality of nozzle holes 33 arranged in the x direction. The first hardened light source 40 is attached to each other between the two heads 32 adjacent to the y direction and the outside of the heads 32 at both ends. The second curing light source 41 is attached to the outer side of the outermost first curing light source 40. The first curing light source 40 and the second curing light source 41 are light (for example, ultraviolet light) that is used to cure the film material adhering to the substrate 60 ( FIG. 1 ).
基板60的表面中,從第2硬化用光源41所 放射的光的功率密度比從第1硬化用光源40所放射的光的功率密度高。塗抹在基板60(第1圖)的液狀的薄膜材料一旦被第1硬化用光源40所放射的光照射時,僅其極薄的表層部硬化形成皮膜,但內部實質上未硬化。僅薄膜材料的表層部硬化的現象稱「假硬化」。在形成有皮膜的薄膜材料之上,一旦彈著有液滴狀的薄膜材料時,會將包覆膜破壞而使得已塗抹的液狀的薄膜材料與新塗抹後的液狀的薄膜材料混合。 The surface of the substrate 60 is from the second curing light source 41. The power density of the emitted light is higher than the power density of the light emitted from the first curing light source 40. When the liquid film material applied to the substrate 60 (Fig. 1) is irradiated with light emitted from the first curing light source 40, only the extremely thin surface layer portion is cured to form a film, but the inside is substantially not cured. The phenomenon in which only the surface layer portion of the film material is hardened is referred to as "false hardening". On the film material on which the film is formed, once the film material having a droplet shape is bounced, the film is broken to mix the applied liquid film material with the freshly applied liquid film material.
對形成有皮膜的薄膜材料,照射從第2硬化 用光源41所放射的光時,會提高薄膜材料的硬化度。例如,硬化至薄膜材料的內部為止。因此,即使對被從第2硬化用光源41放射的光所照射的薄膜材料彈著新的液滴狀的薄膜材料,也不會使兩者混合。 For the film material forming the film, the irradiation is from the second hardening When the light emitted by the light source 41 is used, the degree of hardening of the film material is increased. For example, it hardens to the inside of the film material. Therefore, even if a new liquid droplet-shaped film material is bounced on the film material irradiated with the light emitted from the second curing light source 41, the two are not mixed.
第2B圖為噴嘴單元30的底視圖。兩個噴頭 32被排列配置在y方向。在兩個噴頭32之間及比最外側的噴頭32的更外側,分別配置有第1硬化用光源40。在比第1硬化用光源40的更外側,分別配置有第2硬化用光源41。 FIG. 2B is a bottom view of the nozzle unit 30. Two nozzles 32 are arranged in the y direction. The first curing light source 40 is disposed between the two heads 32 and outside the outermost head 32. The second curing light source 41 is disposed outside the first curing light source 40.
噴頭32的各個噴嘴孔33是在x方向呈鋸齒 狀排列。著眼於一個噴頭32時,其中一例是在x方向以相當於300dpi的間距配置有噴嘴孔33。一方的噴頭32是相對於另一方的噴頭32,僅以相當於300dpi的間距的一半偏位配置於x方向。因此,兩個噴頭32的噴嘴孔33整體是以相當於600dpi的間距(以下,稱噴嘴間距)配置在x方向。 Each nozzle hole 33 of the head 32 is serrated in the x direction Arranged in a shape. When one head 32 is focused on, one example is that the nozzle hole 33 is disposed at a pitch equivalent to 300 dpi in the x direction. One of the heads 32 is disposed in the x direction with respect to the other of the heads 32, with only a half of the pitch corresponding to 300 dpi. Therefore, the nozzle holes 33 of the two heads 32 as a whole are arranged in the x direction at a pitch corresponding to 600 dpi (hereinafter, referred to as a nozzle pitch).
第3圖表示載台22、基板60及噴嘴單元30 的上視圖。載台22的保持面上保持著基板60。在基板60的上方支撐著噴嘴單元30。在底板31上,安裝噴頭32、第1硬化用光源40及第2硬化用光源41。移動機構21藉著來自控制裝置50的控制,使得載台22在x方向及y方向移動。控制裝置50是控制從噴頭32吐出薄膜材料的時機。 3 shows the stage 22, the substrate 60, and the nozzle unit 30. Upper view. The substrate 60 is held on the holding surface of the stage 22. The nozzle unit 30 is supported above the substrate 60. The head 32, the first curing light source 40, and the second curing light source 41 are mounted on the bottom plate 31. The moving mechanism 21 moves the stage 22 in the x direction and the y direction by control from the control device 50. The control device 50 controls the timing at which the film material is discharged from the head 32.
一邊使基板60在y方向移動,一邊從噴嘴孔 33(第2B圖)將薄膜材料液滴化後吐出,藉此以相當於噴嘴間距的清晰度(600dpi)在x方向將薄膜材料彈著在基板60上。彈著於基板60後(塗抹後)的薄膜材料是藉由從位在基板60的移動方向下游側的第1硬化用光源40所放射的光形成假硬化。 Moving the substrate 60 from the nozzle hole while moving the substrate 60 in the y direction 33 (Fig. 2B) The film material was dropletized and discharged, whereby the film material was bounced on the substrate 60 in the x direction at a sharpness (600 dpi) corresponding to the nozzle pitch. The film material that has been bounced on the substrate 60 (after smearing) is pseudo-hardened by light emitted from the first curing light source 40 located on the downstream side in the moving direction of the substrate 60.
一邊使基板60在y方向移動,將薄膜材料液 滴化後從噴嘴孔33(第2B圖)吐出的處理進行「掃描」。使得基板60僅以噴嘴間距的1/4朝著x方向偏位進行四次的掃描,藉此可以在x方向相當於噴嘴間距的清晰度4倍(2400dpi)的清晰度,將薄膜材料彈著於基板60。在四次的掃描中,可使基板60僅朝一方向移動,也可往返移動。 The film material liquid is moved while moving the substrate 60 in the y direction. The process of discharging from the nozzle hole 33 (Fig. 2B) after the dropping is "scanned". The substrate 60 is scanned four times with respect to the 1/4 of the nozzle pitch toward the x direction, whereby the film material can be bounced in the x direction corresponding to the sharpness of the nozzle pitch by 4 times (2400 dpi). On the substrate 60. In the four scans, the substrate 60 can be moved in only one direction or can be moved back and forth.
將可以四次的掃描塗抹薄膜材料的區域設成 一個路徑(通路)。一個路徑的x方向的寬度比基板60的x方向的尺寸狹窄的場合,將基板60的表面區分成複數個路徑,在各路徑形成薄膜,可藉此在基板60的全區域形成薄膜。 Set the area where the film material can be applied four times. A path (pathway). When the width of one path in the x direction is narrower than the dimension of the substrate 60 in the x direction, the surface of the substrate 60 is divided into a plurality of paths, and a film is formed on each path, whereby a film can be formed over the entire area of the substrate 60.
薄膜所要求的清晰度為600dpi的場合,可以 一次的掃描完成一個路徑的處理。又,薄膜所要求的清晰度為2400dpi的場合,使用具有相當於2400dpi的噴嘴間距的噴嘴單元30時,可以一次的掃描完成一個路徑的處理。 When the required resolution of the film is 600 dpi, One scan completes the processing of one path. Further, when the resolution required for the film is 2400 dpi, when the nozzle unit 30 having a nozzle pitch of 2400 dpi is used, the processing of one path can be completed in one scan.
第4圖表示應形成於基板60的薄膜的上面形 狀之一例。在基板60的表面區劃出應形成薄膜的區域(薄膜形成區域)61。第4圖中,在薄膜形成區域61賦予陰影線。如第4圖表示的例中,一個薄膜形成區域61在內部包括圓形或長方形的開口62。其他的薄膜形成區域61為圓形或正方形。將定義薄膜形成區域61的圖形的位映像形式的影像數據記憶於控制裝置50(第1圖)。 其一例為基板60是相當於層疊基板的核心基板,薄膜是相當於層間絕緣膜。 Figure 4 shows the shape of the film which should be formed on the substrate 60. An example of a shape. A region (film formation region) 61 where a film should be formed is drawn in the surface region of the substrate 60. In Fig. 4, hatching is given to the film formation region 61. As in the example shown in Fig. 4, a film forming region 61 includes a circular or rectangular opening 62 therein. The other film forming regions 61 are circular or square. The video data of the bit map format defining the pattern of the thin film formation region 61 is stored in the control device 50 (Fig. 1). In one example, the substrate 60 is a core substrate corresponding to a laminated substrate, and the thin film corresponds to an interlayer insulating film.
第5A圖表示基板60與噴嘴單元30的側視 圖。第2硬化用光源41、第1硬化用光源40、噴頭32、第1硬化用光源40、噴頭32、第1硬化用光源40及第2硬化用光源41是依此順序排列於y方向。將基板60一邊朝著y軸的正方向(第5a圖中的右方向)移動,一邊從兩個噴頭32使薄膜材料液滴化後吐出。 FIG. 5A shows a side view of the substrate 60 and the nozzle unit 30 Figure. The second curing light source 41, the first curing light source 40, the head 32, the first curing light source 40, the head 32, the first curing light source 40, and the second curing light source 41 are arranged in the y direction in this order. The substrate 60 is moved toward the positive direction of the y-axis (the right direction in FIG. 5a), and the film material is dropletized from the two heads 32, and then discharged.
點亮配置在兩個噴頭32的各下游側(y軸的 正的一側)的第1硬化用光源40及配置在下游側端部的第2硬化用光源41。上游側端部的第2硬化用光源41及最上游側的第1硬化用光源40被熄滅而不使用。 The lighting is arranged on each downstream side of the two heads 32 (y-axis The first hardening light source 40 of the positive side and the second curing light source 41 disposed at the downstream end. The second curing light source 41 at the upstream end and the first curing light source 40 on the most upstream side are extinguished and are not used.
第5B圖表示彈著於基板60後的薄膜材料的 上視圖。第5B圖中,以圓形表示彈著時之液滴狀的薄膜材料。從上游側的噴頭32吐出的薄膜材料為彼此平行,且沿著等間隔配置的第1假設直線64,使彈著位置一邊移動進行彈著。從下游側的噴頭32吐出的薄膜材料是在彼此相鄰的第1假設直線64之間,且沿著與第1假設平 行配置的第2假設直線65,使彈著位置一邊移動進行彈著。沿著第2假設直線65彈著的薄膜材料是與沿著其兩側的第1假設直線64彈著的薄膜材料成部分重疊。 Figure 5B shows the film material after being played on the substrate 60. Top view. In Fig. 5B, the film material in the form of a droplet at the time of the bombing is indicated by a circle. The film material discharged from the head 32 on the upstream side is parallel to each other, and the first hypothetical straight line 64 arranged at equal intervals moves the projecting position while being bounced. The film material discharged from the head 32 on the downstream side is between the first hypothetical straight lines 64 adjacent to each other, and is flat along the first assumption. The second hypothetical line 65 arranged in the row moves the projecting position while moving. The film material that is struck along the second hypothetical line 65 is partially overlapped with the film material that is struck along the first hypothetical line 64 on either side thereof.
參閱第6A圖~第6F圖,說明藉實施例的薄膜 形成方法。第6A圖~第6F圖是分別表示第5A圖、第5B圖的一點鏈線6A~6F之位置的基板60及薄膜材料的剖視圖。 Referring to FIGS. 6A to 6F, the film by the embodiment is illustrated. Forming method. 6A to 6F are cross-sectional views showing the substrate 60 and the film material at the positions of the one-dot chain lines 6A to 6F in the fifth and fifth panels, respectively.
如第6A圖表示,從上游側的噴頭32(第5A圖)吐出薄膜材料。藉此,在基板60上塗抹薄膜材料。如第6B圖表示,在液狀的薄膜材料71(第6A圖)通過第1硬化用光源40(第5A圖)的下方時,被從第1硬化用光源40所放射的光所照射。藉此,使薄膜材料71硬化至第1硬化度為止,形成第1薄膜部份72。 As shown in Fig. 6A, the film material is discharged from the head 32 (Fig. 5A) on the upstream side. Thereby, a film material is applied to the substrate 60. As shown in FIG. 6B, when the liquid film material 71 (Fig. 6A) passes under the first curing light source 40 (Fig. 5A), it is irradiated with light emitted from the first curing light source 40. Thereby, the film material 71 is cured to the first degree of curing, and the first film portion 72 is formed.
第1薄膜部份72具有以液狀的薄膜材料薄的皮膜72a包覆的構造。從第1硬化用光源40所放射的光雖然使薄膜材料71(第6A圖)的表層部成薄硬化,但具有未能硬化到內部程度的功率密度。 The first film portion 72 has a structure in which a liquid film 72a having a thin film material is coated. The light emitted from the first curing light source 40 is thinned and hardened to the surface layer portion of the film material 71 (Fig. 6A), but has a power density that cannot be hardened to the inside.
將所有的單體橋接成聚合物狀態的硬化度定義為100%。硬化度例如可藉著傅立葉變換紅外線拉曼分光法評估。第1薄膜部份72由於在內部的液狀的薄膜材料包括未橋接的聚合物,所以第1硬化度為遠較100%低的值。 The degree of hardening of bridging all monomers into a polymer state is defined as 100%. The degree of hardening can be evaluated, for example, by Fourier transform infrared Raman spectroscopy. Since the first film portion 72 includes an unbridged polymer in the liquid film material inside, the first degree of hardening is a value which is much lower than 100%.
如第6C圖表示,從下游側的噴頭32(第5A圖)吐出薄膜材料。藉此,與第1薄膜部份72部份重疊 地將液狀的薄膜材料73彈著於基板60。藉液狀的薄膜材料73的彈著,使皮膜72a的一部份破損。而可以使第1薄膜部份72內部的液狀的薄膜材料與新彈後的液狀的薄膜材料73彼此混合。 As shown in Fig. 6C, the film material is discharged from the head 32 (Fig. 5A) on the downstream side. Thereby, partially overlapping the first film portion 72 The liquid film material 73 is bounced on the substrate 60. The ejection of the liquid film material 73 causes a part of the film 72a to be broken. Further, the liquid film material inside the first film portion 72 and the liquid film material 73 after the new bomb can be mixed with each other.
如第6D圖表示,在液狀的薄膜材料73通過 下游側的第1硬化用光源40(第5A圖)的下方時,利用從第1硬化用光源40所放射的光,將液狀的薄膜部份材料73(第6C圖)硬化至第2硬化度為止。藉此,形成第2薄膜部份74。第2薄膜部份74是與第1薄膜部份72同樣,具有以液狀的薄膜材料薄的皮膜74a所包覆的構造。 As shown in Fig. 6D, the liquid film material 73 passes through In the lower side of the first curing light source 40 (Fig. 5A), the liquid film portion material 73 (Fig. 6C) is hardened to the second hardening by the light emitted from the first curing light source 40. So far. Thereby, the second thin film portion 74 is formed. Similarly to the first thin film portion 72, the second thin film portion 74 has a structure in which a liquid film 74a having a thin film material is coated.
第2硬化度也是與第1硬化度同樣為遠低於100%的值。 形成第1薄膜部份72(第6B圖)時的光的功率密度與形成第2薄膜部份74時的光的功率密度相等時,則第1硬化度與第2硬化度大致相等。 The second degree of hardening is also a value far below 100% as in the first degree of hardening. When the power density of light when forming the first thin film portion 72 (Fig. 6B) is equal to the power density of light when the second thin film portion 74 is formed, the first hardening degree and the second hardening degree are substantially equal.
第6E圖表示從第6D圖的狀態經過某時間之 時間點的基板60的剖視圖。由於第1薄膜部份72的皮膜72a及第2薄膜部份74的皮膜74a(第6D圖)充分地薄,所以可藉第1薄膜部份72及第2薄膜部份74(第6D圖)之液狀的薄膜材料的表面張力,使皮膜72a、74a變形,使其表面平坦化。表面一旦平坦化時,第1薄膜部份72與第2薄膜部份74的邊界則成為不能分辨。 Figure 6E shows the state from the 6D picture after a certain time A cross-sectional view of the substrate 60 at a time point. Since the film 72a of the first film portion 72 and the film 74a of the second film portion 74 (Fig. 6D) are sufficiently thin, the first film portion 72 and the second film portion 74 can be borrowed (Fig. 6D). The surface tension of the liquid film material deforms the films 72a and 74a to flatten the surface. When the surface is flattened, the boundary between the first film portion 72 and the second film portion 74 becomes indistinguishable.
如第6F圖表示,第1薄膜部份72及第2薄 膜部份74,藉著來自配置在y軸正的一側端部的第2硬化用光源41(第5A圖)的光的照射,使其硬化至第3硬 化度為止。在此,「第3硬化度」是意味著藉薄膜材料的彈著而不變形程度的硬度。第3硬化度比第1硬化度及第2硬化度任一硬化度都高。藉硬化至第3硬化度為止,形成薄膜70。在此時間點,第3硬化度並無達到薄膜70所要求的硬化度為止的必要。第3硬化度在未到達應形成薄膜所要求之硬化度的場合,將基板60從載台22(第1圖)取出之後,對薄膜70照射強的光,使其硬化至成為目標之硬化度為止即可。 As shown in Fig. 6F, the first film portion 72 and the second thin film The film portion 74 is hardened to the third hard by irradiation of light from the second curing light source 41 (Fig. 5A) disposed at one end of the y-axis positive side. Until then. Here, the "third degree of hardening" means the hardness by which the film material is bounced without being deformed. The third degree of hardening is higher than any of the first curing degree and the second curing degree. The film 70 is formed by hardening to the third degree of hardening. At this point of time, the third degree of hardening does not have to reach the degree of hardening required for the film 70. When the third degree of hardening does not reach the degree of hardening required to form a film, after the substrate 60 is taken out from the stage 22 (Fig. 1), the film 70 is irradiated with strong light to be cured to a desired degree of hardening. That's it.
接著,一邊將上述實施例的薄膜形成方法的 效果與比較例1及比較例2的薄膜形成方法進行對比一邊說明。 Next, while the film forming method of the above embodiment is The effects will be described in comparison with the film formation methods of Comparative Example 1 and Comparative Example 2.
第7A圖表示藉比較例1的薄膜形成方法形成 薄膜時之基板60、噴頭32、第1硬化用光源40及第2硬化用光源41的側視圖。比較例1為熄滅第2硬化用光源41。並且,從第1硬化用光源40所放射的光之基板60表面的功率密度是與從第5A圖表示實施例之薄膜形成方法的第2硬化用光源41所放射的光之基板60表面的功率密度大致相等。 Fig. 7A shows the formation of the film formation method of Comparative Example 1. A side view of the substrate 60, the head 32, the first curing light source 40, and the second curing light source 41 in the case of a film. In the comparative example 1, the second hardening light source 41 is extinguished. The power density of the surface of the substrate 60 of the light emitted from the first curing light source 40 is the power of the surface of the substrate 60 which is the light emitted from the second curing light source 41 of the film forming method of the fifth embodiment. The densities are roughly equal.
第7B圖~第7E圖表示各第7A圖之一點鏈線 7B~7E的位置之基板60的剖視圖。如第7B圖表示,從上游側的噴頭32(第7A圖)吐出薄膜材料,藉此將薄膜材料76塗抹於基板60。 7B to 7E show a point chain of each of the 7A A cross-sectional view of the substrate 60 at the position of 7B to 7E. As shown in Fig. 7B, the film material is discharged from the head 32 (Fig. 7A) on the upstream side, whereby the film material 76 is applied to the substrate 60.
如第7C圖表示,藉來自下游側之第1硬化用光源40的光,將液狀的薄膜材料76(第7B圖)硬化至 第3硬化度為止,藉此形成第1薄膜部份77。實施例中,如第6B圖表示,第1薄膜部份72雖是僅表層部硬化的狀態,但是比較例1中,第1薄膜部份77是硬化至內部為止。 As shown in Fig. 7C, the liquid film material 76 (Fig. 7B) is hardened by the light from the first curing light source 40 on the downstream side. The first thin film portion 77 is formed by the third curing degree. In the embodiment, as shown in Fig. 6B, the first film portion 72 is in a state in which only the surface layer portion is cured. However, in the first embodiment, the first film portion 77 is cured to the inside.
如第7D圖表示,從下游側的噴頭32(第7A圖)吐出薄膜材料,藉此將薄膜材料78塗抹於基板60。薄膜材料78是與第1薄膜部份77部份重疊。由於第1薄膜部份77是硬化至內部為止,所以薄膜材料78與第1薄膜部份77不溶合。 As shown in Fig. 7D, the film material is discharged from the head 32 (Fig. 7A) on the downstream side, whereby the film material 78 is applied to the substrate 60. The film material 78 partially overlaps the first film portion 77. Since the first film portion 77 is hardened to the inside, the film material 78 is not fused with the first film portion 77.
如第7E圖表示,薄膜材料78(第7D圖)為來自第1硬化用光源40的光所照射而硬化至第3硬化度為止,藉此形成第2薄膜部份79。 As shown in Fig. 7E, the film material 78 (Fig. 7D) is formed by irradiating light from the first curing light source 40 and curing to the third curing degree, thereby forming the second film portion 79.
比較例1中,第1薄膜材料77與第2薄膜部份79彼此不溶合。因此,會在所形成的薄膜表面殘留凹凸。根據該等凹凸,可以肉眼觀察與掃描方向(y方向)平行的細條紋。 In Comparative Example 1, the first film material 77 and the second film portion 79 were not fused to each other. Therefore, irregularities remain on the surface of the formed film. According to the unevenness, fine streaks parallel to the scanning direction (y direction) can be visually observed.
第8A圖表示藉比較例2的薄膜形成方法形成薄模時之基板60、噴頭32、第1硬化用光源40及第2硬化用光源41的側視圖。比較例2為熄滅第1硬化用光源40。又,從第2硬化用光源41所放射的光之基板60表面的功率密度和從第5A圖表示實施例之薄膜形成方法的第2硬化用光源41所放射的光之基板60表面的功率密度大致相等。 8A is a side view showing the substrate 60, the head 32, the first curing light source 40, and the second curing light source 41 when the thin film is formed by the thin film forming method of Comparative Example 2. In Comparative Example 2, the first curing light source 40 was turned off. Moreover, the power density of the surface of the substrate 60 of the light emitted from the second curing light source 41 and the power density of the surface of the substrate 60 of the light emitted from the second curing light source 41 of the thin film forming method of the fifth embodiment are shown in FIG. Almost equal.
第8B圖~第8E圖是分別表示第8A圖的一點 鏈線8B~8E之位置的基板60的剖視圖。如第8B圖表示,從上游側的噴頭32(第8A圖)吐出薄膜材料,藉此將薄膜材料76塗抹於基板60。如第8C圖表示,從下游側的噴頭32(第8A圖)吐出薄膜材料,藉此將薄膜材料78塗抹於基板60。由於薄膜材料76及薄膜材料78為液體狀態,所以兩者可容易混合。 Fig. 8B to Fig. 8E are points showing Fig. 8A, respectively. A cross-sectional view of the substrate 60 at the position of the chain lines 8B to 8E. As shown in Fig. 8B, the film material is discharged from the head 32 (Fig. 8A) on the upstream side, whereby the film material 76 is applied to the substrate 60. As shown in Fig. 8C, the film material is discharged from the head 32 (Fig. 8A) on the downstream side, whereby the film material 78 is applied to the substrate 60. Since the film material 76 and the film material 78 are in a liquid state, they can be easily mixed.
如第8D圖表示,在薄膜材料78的彈著後,藉第2硬化用光源41進行光的照射之前,將薄膜材料76與薄膜材料78混合,形成表面平坦的液狀的薄膜80。又,液狀的薄膜80的邊緣仍是液狀的狀態,所以彈著於最外圍的薄膜材料76會向面內擴散而產生滲透。 As shown in Fig. 8D, after the film material 78 is bounced, the film material 76 and the film material 78 are mixed by the second curing light source 41 to form a liquid film 80 having a flat surface. Further, since the edge of the liquid film 80 is still in a liquid state, the film material 76 which is projected on the outermost periphery diffuses into the surface to cause penetration.
如第8E圖表示,藉來自第2硬化用光源41的光照射於液狀的薄膜80(第8D圖)而硬化。藉此形成薄膜81。比較例2中,薄膜81的表面雖呈平坦化,但邊緣易產生滲透。 As shown in Fig. 8E, the light from the second curing light source 41 is irradiated onto the liquid film 80 (Fig. 8D) to be cured. Thereby, the film 81 is formed. In Comparative Example 2, although the surface of the film 81 was flattened, the edge was liable to permeate.
第1圖~第6F圖表示的實施例是在液狀的薄膜材料71(第6A圖)彈著於基板60之後,藉位在吐出薄膜材料71後之噴頭32下游側的第1硬化用光源40,立即硬化至第1硬化度為止。如第8D圖表示,塗抹於基板60的薄膜材料仍是液狀的狀態時,薄膜材料會向面內方向擴散,產生滲透。實施例是在薄膜材料的彈著後,以短時間硬化至第1硬化度為止,之後不會產生滲透。因此,可減輕薄膜70(第6F圖)邊緣的滲透。從下游側的噴頭32(第5A圖)吐出的薄膜材料73(第6C圖)形成 薄膜70的場合,也同樣可減輕滲透。 The first to sixth embodiments show the first curing light source on the downstream side of the head 32 after the film material 71 is ejected after the liquid film material 71 (Fig. 6A) is bounced on the substrate 60. 40, immediately hardened until the first degree of hardening. As shown in Fig. 8D, when the film material applied to the substrate 60 is still in a liquid state, the film material diffuses in the in-plane direction to cause penetration. In the embodiment, after the film material is bounced, it is hardened to the first degree of hardening in a short time, and then no penetration occurs. Therefore, the penetration of the edge of the film 70 (Fig. 6F) can be alleviated. Formed from the film material 73 (Fig. 6C) discharged from the head 32 (Fig. 5A) on the downstream side In the case of the film 70, the penetration can be similarly reduced.
從薄膜材料彈著於基板60後,到硬化至第1 硬化度為止的時間是依存於從薄膜材料的彈著地點到其下游側的第1硬化用光源40(第5A圖)的照射區域為止的距離及基板60的移動速度。為獲得充分減輕滲透的效果,設從薄膜材料彈著於基板60後,到硬化至第1硬化度為止的時間短於0.2秒為佳。同樣地,設從薄膜材料彈著於基板60後,到硬化至第2硬化度為止的時間也短於0.2秒為佳。 After the film material is bounced on the substrate 60, it is hardened to the first The time until the degree of hardening is dependent on the distance from the impact point of the film material to the irradiation region of the first curing light source 40 (Fig. 5A) on the downstream side and the moving speed of the substrate 60. In order to obtain an effect of sufficiently reducing the penetration, it is preferable that the time from the film material being bounced on the substrate 60 to the time of curing to the first degree of hardening is less than 0.2 second. Similarly, it is preferable that the time from the film material being bounced on the substrate 60 to the second curing degree is less than 0.2 second.
硬化至第2硬化度為止的第2薄膜部份74(第6D圖),被硬化至第3硬化度而形成薄膜70(第6F圖)為止的時間是依存於基板60的表面之中,從最下游側的第1硬化用光源40(第5A圖)的照射區域到配置在下游側端部的第2硬化用光源41之照射區域為止的距離及基板60的移動速度。為使第1薄膜部份72與第2薄膜部份74(第6D圖)溶合,確保表面平坦化為止的時間,設硬化至第2硬化度為止的第2薄膜部份74(第6D圖)被硬化至第3硬化度為止的經過時間以長於0.5秒為佳。 The second film portion 74 (Fig. 6D) which is cured to the second degree of hardening is cured to the third degree of hardening and the time until the film 70 (Fig. 6F) is formed depends on the surface of the substrate 60. The distance from the irradiation region of the first curing light source 40 (Fig. 5A) on the most downstream side to the irradiation region of the second curing light source 41 disposed at the downstream end portion, and the moving speed of the substrate 60. In order to fuse the first film portion 72 and the second film portion 74 (Fig. 6D), the second film portion 74 is cured until the second curing degree is ensured by the time until the surface is flattened (Fig. 6D). The elapsed time until it is hardened to the third degree of hardening is preferably longer than 0.5 seconds.
為滿足上述條件,設從最下游側之第1硬化用光源40的照射區域到最下游側的第2硬化用光源41之照射區域為止的距離較從來自下游側的噴頭32之薄膜材料的彈著地點到其下游側的第1硬化用光源40的照射區域為止的距離長為佳。 In order to satisfy the above conditions, the distance from the irradiation region of the first curing light source 40 on the most downstream side to the irradiation region of the second curing light source 41 on the most downstream side is larger than that from the film material of the head 32 from the downstream side. The distance from the spot to the irradiation region of the first curing light source 40 on the downstream side is preferably long.
接著,參閱第9A圖~第10F圖,針對其他實 施形態的薄膜形成裝置及薄膜形成方法說明。以下,針對與第1圖~第6F圖表示之實施例的不同點說明,針對相同的構成簡略其說明。該實施例是在每一掃描,僅噴嘴間距的1/4朝著x方向偏位進行四次的掃描,藉此在一個路徑內形成薄膜。 Next, refer to Figure 9A to Figure 10F for other realities. A film forming apparatus and a film forming method will be described. Hereinafter, differences from the embodiments shown in FIGS. 1 to 6F will be described, and the same configurations will be briefly described. In this embodiment, only four scans of the 1/4 of the nozzle pitch are offset in the x direction for each scan, thereby forming a film in one path.
第9A圖表示第一次掃描中的基板60、噴頭 32及第1硬化用光源40的側視圖。該實施例中,不使用第2硬化用光源41(第2A圖、第2B圖)。第1硬化用光源40是藉由控制裝置50(第1圖)的控制,可將放射的光的強度成兩階段切換。 Figure 9A shows the substrate 60 and the head in the first scan. 32 and a side view of the first curing light source 40. In this embodiment, the second curing light source 41 (Fig. 2A, Fig. 2B) is not used. The first curing light source 40 is controlled by the control device 50 (Fig. 1) to switch the intensity of the emitted light in two stages.
從第1硬化用光源40所放射的光的強度低時 (以下,稱此時的強度為「低強度」),可以將塗抹在基板60的薄膜材料硬化至第1硬化度或第2硬化度為止。 亦即,如第6B圖及第6D圖表示,僅使得薄膜材料的表層部成薄的硬化,形成皮膜。從第1硬化用光源40所放射的光的強度高時(以下,稱此時的強度為「高強度」),可以將塗抹在基板60的薄膜材料硬化至第3硬化度為止。亦即,如第6F圖表示,可使薄膜材料硬化至內部為止。 When the intensity of light emitted from the first curing light source 40 is low (Hereinafter, the strength at this time is referred to as "low strength"), and the film material applied to the substrate 60 can be cured to the first curing degree or the second curing degree. That is, as shown in Figs. 6B and 6D, only the surface layer portion of the film material is thinned and hardened to form a film. When the intensity of the light emitted from the first curing light source 40 is high (hereinafter, the intensity at this time is "high strength"), the film material applied to the substrate 60 can be cured to the third curing degree. That is, as shown in Fig. 6F, the film material can be hardened to the inside.
第1次的掃描是關於基板60的移動方向(y 軸的正方向)從配置在噴頭32的各下游側的第1硬化用光源40以低強度的光放射的狀態進行。 The first scan is about the moving direction of the substrate 60 (y The positive direction of the shaft is performed in a state in which the first curing light source 40 disposed on each downstream side of the head 32 is radiated with low intensity light.
第10A圖表示來自最下游側的第1硬化用光 源40的光所照射隨後(第9A圖的一點鏈線10A的位置)之基板60的剖視圖。與第6D圖表示的狀態同樣地,形成以皮膜72a所包覆的第1薄膜部份72,及以皮膜74a所包覆的第2薄膜部份74。第1薄膜部份72及第2薄膜部份74的內部仍是液體狀態。 Fig. 10A shows the first hardening light from the most downstream side A cross-sectional view of the substrate 60 after the light of the source 40 is irradiated (the position of the one-point chain line 10A in Fig. 9A). Similarly to the state shown in Fig. 6D, the first film portion 72 covered with the film 72a and the second film portion 74 covered with the film 74a are formed. The inside of the first film portion 72 and the second film portion 74 are still in a liquid state.
第9B圖表示第2次掃描中的基板60、噴頭 32及第1硬化用光源40的剖視圖。在第1次掃描結束時,使基板60的移動方向反轉,並使基板60朝著x方向僅偏移噴嘴間距的1/4,進行第2次的掃描。第2次的掃描是從最上游側(y軸的最正的一側)的第1硬化用光源40放射高強度的光,從其他的兩個第1硬化用光源40放射低強度的光。 Figure 9B shows the substrate 60 and the head in the second scan. 32 and a cross-sectional view of the first curing light source 40. At the end of the first scanning, the moving direction of the substrate 60 is reversed, and the substrate 60 is shifted by only 1/4 of the nozzle pitch in the x direction, and the second scanning is performed. In the second scanning, the first curing light source 40 from the most upstream side (the most positive side of the y-axis) radiates high-intensity light, and the other two first curing light sources 40 emit low-intensity light.
第10B圖表示高強度的光照射之瞬間前(第 9B圖的一點鏈線10B的位置)的基板60的剖視圖。藉第1薄膜部份72及第2薄膜部份74的液狀部份的表面張力,使皮膜72a及74b變形成為平坦。藉以使第1薄膜部份72及第2薄膜部份74的邊界不能分辨。 Figure 10B shows the moment before the high-intensity light irradiation (the first A cross-sectional view of the substrate 60 in the position of the one-point chain line 10B of Fig. 9B. The surface tension of the liquid portions of the first film portion 72 and the second film portion 74 deforms the films 72a and 74b to be flat. Thereby, the boundaries of the first film portion 72 and the second film portion 74 are indistinguishable.
第10C圖表示高強度的光照射之隨後(第9B 圖的一點鏈線10C的位置)的基板60的剖視圖。藉硬化至第1薄膜部份72及第2薄膜部份74(第10B圖)的內部為止,形成薄膜70。薄膜70的表面為平坦。如此一來,在某次掃描時假硬化的薄膜材料會在下一次掃描時,硬化至第3的硬化度為止。 Figure 10C shows the subsequent high-intensity light irradiation (9B) A cross-sectional view of the substrate 60 at the position of the point chain 10C of the figure. The film 70 is formed by hardening to the inside of the first film portion 72 and the second film portion 74 (Fig. 10B). The surface of the film 70 is flat. As a result, the film material that is pseudo-hardened during a certain scan hardens to the third degree of hardening on the next scan.
第10D圖表示通過最下游側(第9B圖中y軸 的負的一側)的第1硬化用光源40之下方隨後(第9B圖的一點鏈線10D的位置)的基板60的剖視圖。在塗抹於第1次掃描時的薄膜70之上,形成第3薄膜部份85及第4薄膜部份86。第3薄膜部份85及第4薄膜部份86的薄膜材料是分別從第1次掃描時所形成的第2薄膜部份74及第1薄膜部份72的彈著地點,在x方向彈著於僅偏離噴嘴間距1/4的地點。在此時間點,第3薄膜部份85及第4薄膜部份86是在表面形成有皮膜85a及86a的狀態,內部仍是液體的狀態。因此,時間經過的同時,第3薄膜部份85及第4薄膜部份86的表面成平坦化。 Figure 10D shows the most downstream side (the y-axis in Figure 9B) The negative side of the first curing light source 40 is followed by a cross-sectional view of the substrate 60 (the position of the one-point chain line 10D in FIG. 9B). The third film portion 85 and the fourth film portion 86 are formed on the film 70 applied to the first scanning. The film materials of the third film portion 85 and the fourth film portion 86 are the bounce locations of the second film portion 74 and the first film portion 72 formed from the first scanning, respectively, and are bounced in the x direction. At a point that is only 1/4 of the nozzle pitch. At this point of time, the third film portion 85 and the fourth film portion 86 are in a state in which the films 85a and 86a are formed on the surface, and the inside is still in a liquid state. Therefore, the surface of the third film portion 85 and the fourth film portion 86 is flattened while the time passes.
第9C圖表示第3次掃描中的基板60、噴頭 32及第1硬化用光源40的側視圖。在第2次掃描結束時,使基板60的移動方向反轉,並使基板60朝著x方向僅偏移噴嘴間距的1/4,進行第3次的掃描。第3次的掃描是從最上游側(y軸的最負的一側)的第1硬化用光源40放射高強度的光,從其他的兩個第1硬化用光源40放射低強度的光。 Figure 9C shows the substrate 60 and the head in the third scan. 32 and a side view of the first curing light source 40. At the end of the second scanning, the moving direction of the substrate 60 is reversed, and the substrate 60 is shifted by only 1/4 of the nozzle pitch in the x direction, and the third scanning is performed. In the third scanning, the first curing light source 40 from the most upstream side (the most negative side of the y-axis) radiates high-intensity light, and the other two first curing light sources 40 emit low-intensity light.
第10E圖表示高強度的光照射隨後(第9C圖 的一點鏈線10E的位置)的基板60的剖視圖。使第3薄膜部份85及第4薄膜部份86(第10D圖)硬化,形成薄膜87。之後,如第9C圖表示,在薄膜87之上,塗抹從噴頭32吐出的薄膜材料,藉假硬化,形成薄膜部份88。 Figure 10E shows high intensity light illumination followed (Fig. 9C) A cross-sectional view of the substrate 60 of the position of the point line 10E. The third film portion 85 and the fourth film portion 86 (Fig. 10D) are cured to form a film 87. Thereafter, as shown in Fig. 9C, the film material discharged from the head 32 is applied over the film 87, and the film portion 88 is formed by pseudo-hardening.
第9D圖表示第4次掃描中的基板60、噴頭32及第1硬化用光源40的側視圖。在第3次掃描結束 時,使基板60的移動方向反轉,並使基板60朝著x方向僅偏移噴嘴間距的1/4,進行第4次的掃描。第4次的掃描是與第2次的掃描(第9B圖)同樣地,從最上游側(y軸的最正的一側)的第1硬化用光源40放射高強度的光,從其他的兩個第1硬化用光源40放射低強度的光。 藉著使第3次掃描時所形成的薄膜部份88硬化至第3硬化度為止,形成薄膜89。之後,在薄膜89之上,塗抹從噴頭32吐出的薄膜材料,藉假硬化,形成薄膜部份90。 Fig. 9D is a side view showing the substrate 60, the head 32, and the first curing light source 40 in the fourth scanning. At the end of the 3rd scan At this time, the moving direction of the substrate 60 is reversed, and the substrate 60 is shifted by only 1/4 of the nozzle pitch in the x direction, and the fourth scanning is performed. In the fourth scanning, the first curing light source 40 from the most upstream side (the most positive side of the y-axis) emits high-intensity light, similar to the second scanning (Fig. 9B). The two first curing light sources 40 emit low intensity light. The film 89 is formed by curing the film portion 88 formed at the time of the third scanning to the third degree of hardening. Thereafter, on the film 89, the film material discharged from the head 32 is applied, and the film portion 90 is formed by pseudo-hardening.
如第9E圖表示,在第4次的掃描結束時,使 基板60的移動方向反轉。從至少一個第1硬化用光源40,以放射高強度的光的狀態,移動基板60。不進行從噴頭32之薄膜材料的吐出。 As shown in Fig. 9E, at the end of the fourth scan, The moving direction of the substrate 60 is reversed. The substrate 60 is moved from at least one of the first curing light sources 40 while emitting high-intensity light. The discharge of the film material from the head 32 is not performed.
第10F圖表示高強度的光照射之後(第9E圖的一點鏈線10F的位置)的基板60的剖視圖。將薄膜部份90(第9E圖)硬化至第3硬化度為止,形成薄膜91。進行第4次掃描時,藉最後硬化用之基板60的移動(第9E圖),形成薄膜70、87、89、91所成的薄膜92。 Fig. 10F is a cross-sectional view showing the substrate 60 after high-intensity light irradiation (the position of the one-point chain line 10F in Fig. 9E). The film portion 90 (Fig. 9E) is cured until the third degree of hardening to form the film 91. At the time of the fourth scanning, the film 92 formed of the films 70, 87, 89, and 91 is formed by the movement of the substrate 60 for final hardening (Fig. 9E).
第9A圖~第10F圖表示的實施例中,可形成表面平坦,且滲透少的薄膜92。此外,可提升所形成薄膜的清晰度。例如,兩個噴頭32的噴嘴間距整體相當於600dpi的場合,藉進行四次的掃描,可以2400pdi的清晰度形成薄膜92。 In the embodiment shown in Figs. 9A to 10F, the film 92 having a flat surface and little penetration can be formed. In addition, the clarity of the formed film can be improved. For example, when the nozzle pitch of the two heads 32 is equivalent to 600 dpi as a whole, the film 92 can be formed with a resolution of 2400 pdi by performing four scans.
沿著以上實施例已說明本發明,但本發明不限於此。例如,可進行種種的變更、改良、組合等為該業 者所自明。 The invention has been described along the above embodiments, but the invention is not limited thereto. For example, various changes, improvements, combinations, etc. can be made for the industry. Self-evident.
60‧‧‧基板 60‧‧‧Substrate
70‧‧‧薄膜 70‧‧‧ film
71‧‧‧液狀的薄膜材料 71‧‧‧Liquid film material
72‧‧‧第1薄膜部份 72‧‧‧1st film part
72a‧‧‧皮膜 72a‧‧‧ film
73‧‧‧液狀的薄膜材料 73‧‧‧Liquid film material
74‧‧‧第2薄膜部份 74‧‧‧2nd film part
74a‧‧‧皮膜 74a‧‧‧ film
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Publication number | Priority date | Publication date | Assignee | Title |
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US7045012B2 (en) * | 2002-07-09 | 2006-05-16 | Seiko Epson Corporation | Jetting method of liquid, jetting apparatus of liquid, production method of substrate for electro-optical apparatus and production method of electro-optical apparatus |
JP3791518B2 (en) * | 2003-10-29 | 2006-06-28 | セイコーエプソン株式会社 | Film forming method and film forming apparatus |
US7399051B2 (en) * | 2004-02-19 | 2008-07-15 | Seiko Epson Corporation | Ejection device, material coating method, method of manufacturing color filter substrate, method of manufacturing electroluminescence display device, and method of manufacturing plasma display device |
TWI312701B (en) * | 2006-02-13 | 2009-08-01 | Seiko Epson Corporatio | Method for forming deposit, droplet ejection apparatus, electro-optic device, and liquid crystal display |
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JP3791518B2 (en) * | 2003-10-29 | 2006-06-28 | セイコーエプソン株式会社 | Film forming method and film forming apparatus |
US7399051B2 (en) * | 2004-02-19 | 2008-07-15 | Seiko Epson Corporation | Ejection device, material coating method, method of manufacturing color filter substrate, method of manufacturing electroluminescence display device, and method of manufacturing plasma display device |
TWI312701B (en) * | 2006-02-13 | 2009-08-01 | Seiko Epson Corporatio | Method for forming deposit, droplet ejection apparatus, electro-optic device, and liquid crystal display |
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