TWI522021B - Film forming method and thin film forming apparatus - Google Patents

Description

Film forming method and film forming device

The present invention relates to a film forming method and a film forming apparatus for forming a film pattern by discharging droplets of a film material toward a substrate.

A technique of discharging a droplet including a material for forming a thin film pattern from a nozzle head (inkjet head) to form a thin film pattern on the surface of the substrate is known (for example, Patent Document 1).

In such a thin film forming technique, for example, a substrate is printed with a printed wiring substrate, and a thin film material is made of a solder resist. The printed wiring board includes a substrate and wiring, and the electronic component or the like is soldered at a predetermined position. The solder resist exposes the conductor portion of the soldered electronic component or the like and covers the portion that does not need to be soldered. A region where a conductor portion is exposed for soldering of an electronic component or the like is referred to as a terminal region.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 3544543

The film material utilizes a photocurable (for example, ultraviolet curable) liquid material. When the droplets of the film material are bounced on the substrate, the film material spreads in the in-plane direction. In order to improve the resolution of the thin film pattern formed on the substrate, after the droplets are bounced, the film material is quickly irradiated with light to cure it. good. However, in the region where the film is applied to the body, the film material is quickly solidified after the droplets are bounced, and the respective droplets are formed corresponding to the respective droplets.

An object of the present invention is to provide a film forming method and a film forming apparatus which are less likely to cause irregularities on the surface of a film.

According to one aspect of the present invention, there is provided a method of forming a thin film, comprising: bounce of an edge of a region where a thin film pattern is formed in a surface of a substrate by a droplet of a film material, and a film material that has been bounced a step of forming an edge pattern composed of a film material at an edge of a region where the film pattern is formed; and a step of causing a droplet of the film material to be elasticized to separate an inner region of the edge by the edge pattern; The step of curing the film material that is struck in the aforementioned inner region.

According to another aspect of the present invention, there is provided a method of forming a thin film, comprising: (a) a surface of which is divided into a first region including an edge of a thin film pattern to be formed, and a substrate on which a second region forming a solid thin film is formed a step of attaching the photocurable film material to a region where the film is to be formed in the region 1; (b) after the step a, irradiating the film material attached to the first region of the substrate to light the film material Curing step (c) a step of adhering the film material to the second region; and (d) after the step c, irradiating the film material adhering to the substrate of the second region to cure the film material After the second region is adhered, the time until the light is applied to the film material in the step d is longer than the time after the light is applied to the film material in the step b.

According to still another aspect of the present invention, a film forming apparatus includes: a stage for holding a substrate; and a nozzle unit that faces the substrate held by the stage and is provided to discharge the surface of the substrate a plurality of nozzle holes of a droplet of the photocurable film material; and a light source that irradiates the film material attached to the substrate with light for curing; and a moving mechanism that causes one of the nozzle unit and the stage to face the other And moving in a direction parallel to the surface of the substrate; and a control device for storing image data of the thin film pattern formed on the substrate, wherein the control device controls the moving mechanism, the nozzle unit, and the foregoing according to the image data a light source that causes droplets of the film material to impinge on the edge of the film pattern, and light is irradiated from the light source to be bounced on After the edge film material is formed to form an edge pattern, the droplets of the film material are caused to be bombarded inside the region where the film pattern is formed, and the light is irradiated from the light source to the inside of the region of the region where the film is formed. Film material.

According to still another aspect of the present invention, a film forming apparatus including: a substrate holding a substrate; and a nozzle unit provided with a substrate facing the substrate, and having light curability and insulation a liquid material, wherein the liquid material is adhered to the plurality of nozzle holes of the substrate; and a moving mechanism, wherein one of the stage and the nozzle unit is opposite to the other side and faces the surface parallel to the surface of the substrate Moving in a direction; the first light source is disposed away from the plurality of nozzle holes in the Y direction, and the liquid material is cured by irradiating light to the liquid material adhered to the substrate; and the second light source is higher than the first light source The light source is further away from each other and disposed at a position in the Y direction from the plurality of nozzle holes, and the liquid material is cured by irradiating light to the liquid material attached to the substrate; and the control device, the memory definition should be formed Controlling, by the image data, the moving mechanism, the nozzle unit, the first and second light sources, and the image data of the thin film pattern on the surface of the substrate; Means controls the first and second light sources, so that the first light source attached to the liquid material comprises a first edge area of the cured film pattern, the second light source is attached to a thin film pattern formed on The liquid material in the second region of the solid is cured.

After the film material striking the edge of the film pattern is cured, the film material of the film material is blocked from flowing in the area corresponding to the inside of the film pattern, and the cured film material blocks the flow in the in-plane direction of the film material. Therefore, it is not necessary to immediately cure the film material which is bounced in the region corresponding to the inside of the film pattern. The film material becomes capable of being solidified after being diffused in the in-plane direction. Thereby, the surface of the inside of the film pattern can be made flat.

[Example 1]

Fig. 1 is a schematic view showing a film forming apparatus based on Example 1. On the platform 20, the stage 22 is supported by the moving mechanism 21. A substrate 50 such as a printed wiring board is held on the upper surface (holding surface) of the stage 22. An XYZ vertical rectangular coordinate system in which the direction parallel to the holding surface of the stage 22 is defined as the X direction and the Y direction, and the normal direction of the holding surface is defined as the Z direction is defined. The moving mechanism 21 moves the stage 22 in the X direction and the Y direction.

Above the platform 20, the beam 32 is supported by the struts 31. A nozzle unit support mechanism 29 and an image pickup device 30 are mounted on the beam 32. The nozzle unit 23 is supported on the nozzle unit support mechanism 29. The imaging device 30 and the nozzle unit 23 are opposed to the substrate 50 held by the stage 22 . Camera device 30 A wiring pattern formed on the surface of the substrate 50, an alignment mark, a thin film pattern formed on the substrate 50, and the like are taken. The image data obtained by the shooting is input to the control device 40. The nozzle unit 23 discharges droplets of a photocurable (for example, ultraviolet curable) film material from the plurality of nozzle holes toward the substrate 50, for example, discharges droplets such as a solder resist. The discharged film material adheres to the surface of the substrate 50.

The nozzle unit 23 can be fixed to the platform 20 to move the stage 22 instead of moving the nozzle unit 23 relative to the stage 22 and the platform 20.

The control device 40 controls the moving mechanism 21, the nozzle unit 23, and the imaging device 30. In the control device 40, image data or the like defining a raster format of a thin film pattern to be formed on the substrate 50 is stored. The operator inputs various commands (command) or numerical data required for control to the control device 40 through the input device 41. The input device 41 uses, for example, a keyboard, a touch panel, an index device, or the like. The control device 40 outputs various kinds of information to the operator from the output device 42. The output device 42 uses a liquid crystal display or the like.

A perspective view of the nozzle unit 23 is shown in Fig. 2A. A plurality of, for example, four nozzle heads 24 are mounted on the nozzle holder 26. A plurality of nozzle holes 24a are formed in each of the nozzle heads 24. The nozzle holes 24a are arranged in the X direction, and the four nozzle heads 24 are arranged in the Y direction and fixed to the nozzle jig 26.

The ultraviolet light source 25 is disposed between the nozzle heads 24 at the outer side of the nozzle heads 24 at both ends. The ultraviolet light source 25 irradiates the substrate 50 (Fig. 1) with ultraviolet rays. Further, when a material which is cured by a light component other than the wavelength region of the ultraviolet ray is used as the film material, a light source containing light having a wavelength component capable of curing the film material is used instead of the ultraviolet light source 25.

A bottom view of the nozzle head 24 and the ultraviolet light source 25 is shown in Fig. 2B. Two nozzle rows 24b are disposed on each of the bottom surfaces (surfaces facing the substrate 50) of the nozzle head 24. Each of the nozzle rows 24b is composed of a plurality of nozzle holes 24a arranged at a pitch (period) 8P in the X direction. One of the nozzle rows 24b is offset from the other nozzle row 24b in the Y direction, and is shifted only in the X direction by the pitch 4P. That is, when focusing on one nozzle head 24, the nozzle holes 24a are distributed at equal intervals with a pitch 4P in the X direction. The pitch 4P corresponds, for example, to a resolution of 300 dpi.

The four nozzle heads 24 are arranged in the Y direction and are displaced from each other in the X direction to be attached to the nozzle jig 26 (FIG. 2A). In FIG. 2B, when the leftmost nozzle head 24 is used as a reference, the second, third, and fourth nozzle heads 24 are shifted by only 2P, P, and 3P in the negative direction of the X-axis. Therefore, when focusing on the four nozzle heads 24 (as a whole nozzle head), the nozzle holes 24a are arranged at equal intervals in the X direction at a pitch P (corresponding to a distance of 1200 dpi).

The ultraviolet light source 25 is disposed between the nozzle heads 24 and the outer side of the outermost nozzle head 24 in the Y direction. The ultraviolet light source 25 cures the liquid film material attached to the substrate 50 (Fig. 1).

By moving the substrate 50 (FIG. 1) in the Y direction and discharging the droplets of the film material from the nozzle holes 24a of the nozzle unit 23, it is possible to form a thin film pattern with a resolution of 1200 dpi in the X direction. . Since the scanning is performed twice by shifting only P/2 in the X direction, the resolution in the X direction can be increased to 2,400 dpi twice. The two scans can be realized by scanning back and forth between the first scan and the second scan. The resolution in the Y direction is derived from the moving speed of the substrate 50 and The discharge cycle of the droplets of the nozzle holes 24a is determined.

3 is a plan view showing the substrate 50 on which the thin film pattern is formed and the nozzle unit 23. On the surface of the substrate 50, a thin film pattern 55 is formed. The substrate 50 is a multi-chamfered substrate in which a plurality of printed wiring boards are arranged in the plane. As an example, a printed wiring board is arranged in a matrix of four rows and two columns in the plane of the substrate 50. The thin film pattern 55 is defined corresponding to the printed wiring board. The thin film pattern 55 is formed, for example, of a solder resist.

The operation of ejecting the droplets of the film material from the nozzle unit 23 while moving the substrate 50 in the Y direction is referred to as "scanning". The area in which the droplets of the film material can be played by one scan is referred to as a unit scanning area 56. The size (width) of the unit scanning region 56 in the X direction is indicated by W. As an example, the width W of the unit scanning region 56 is 1/4 of the dimension of the substrate 50 in the X direction.

A method of forming a thin film according to the first embodiment will be described with reference to FIGS. 4A to 4L and FIGS. 5A to 5C. 4A to 4L represent the substrate 50 shown in Fig. 3, and only the area corresponding to one printed wiring board is shown. Further, for convenience of explanation, although two squares and four circular openings are arranged in the film pattern, a plurality of finer openings are actually arranged.

4A is a plan view showing the substrate 50 and the nozzle unit 23 before and after the first scanning. A cross-sectional view of a dotted line 4B-4B in Fig. 4A is shown in Fig. 4B. A cross-sectional view of a dotted line 5A-5A in Fig. 4A is shown in Fig. 5A.

As shown in FIG. 4A, the substrate 50 is scanned in the negative direction of the Y-axis. at this time, The droplets of the film material are caused to bounce from the nozzle head 24 (Fig. 5A) to the outermost edge of the film pattern 55 and the edge of the opening. During the scanning, the substrate 50 is irradiated with ultraviolet rays from the ultraviolet light source 25 (Fig. 5A) in advance. Therefore, after the droplets of the film material are bounced on the substrate 50, the surface portion of the film material is immediately cured. The ultraviolet light emitted from the ultraviolet light source 25 has insufficient light energy density on the surface of the substrate, so that the inside of the film material is in an uncured state. The reaction in which only the surface layer portion of the film material is cured is referred to as "temporary curing", and the reaction which is cured to the inside is referred to as "formal curing". By the first scanning, a linear edge pattern 60 composed of a temporarily cured film material is formed at the outermost edge of the film pattern in one unit scanning region 56 (Fig. 3) and at the edge of the opening.

4C is a plan view showing the substrate 50 and the nozzle unit 23 before and after the second scanning. A cross-sectional view of a dotted line 4D-4D in Fig. 4C is shown in Fig. 4D. As shown in FIG. 4C, the substrate 50 is moved by a distance equal to the width W of the unit scanning region 56 in the negative direction of the X-axis. Thereafter, the second scanning is performed by moving the substrate 50 in the positive direction of the Y-axis. In the second scanning, droplets of the film material are also ejected from the nozzle unit 23 to the outermost edge of the film pattern 55 and the edge of the opening, and the droplets of the film material are temporarily solidified immediately after the ejection.

In the first scanning, the outermost edge of the thin film pattern 55 in the unit scanning region 56 adjacent to the unit scanning region 56 of the edge pattern 60 is formed, and the temporarily cured edge pattern 61 is formed at the edge of the opening.

4E is a plan view showing the substrate 50 and the nozzle unit 23 before and after the third scanning. Figure 4F shows the dotted line 4F-4F in Figure 4E. In the cross-sectional view, a cross-sectional view of a dotted line 5B-5B in Fig. 4E is shown in Fig. 5E. After the second scanning is completed, the third scanning is performed by moving the substrate 50 in the negative direction of the Y-axis. In the third scanning, droplets of the film material are caused to eject from the nozzle head 24 (Fig. 5B) to the inside (solid area) of the region where the thin film pattern 55 (Fig. 3) is formed. A planar pattern 62 having an edge pattern 61 formed in the second scanning as an edge is formed. In the third scan, the ultraviolet light source 25 (Fig. 5B) is in a closed state. Therefore, the planar pattern 62 remains in an uncured state.

Although the planar pattern 62 is in an uncured state, the edge pattern 61 formed in a region corresponding to the edge of the film pattern 55 blocks the diffusion of the film material in the in-plane direction. Therefore, the uncured film material does not immerse into the inside of the opening. On the boundary line 63 of the unit scanning region 56 (Fig. 3), an edge pattern for blocking the uncured film material is not formed. Therefore, on the boundary line 63 of the unit scanning region 56, the film material is diffused to a balance state in accordance with the wettability with the substrate.

4G shows a plan view of the substrate 50 and the nozzle unit 23 before and after the fourth scanning. A cross-sectional view of a dotted line 4H-4H in Fig. 4G is shown in Fig. 4H. After the third scanning, the substrate 50 is moved in the positive direction of the X-axis by only the distance equal to the width W of the unit scanning region 56 (Fig. 3). The fourth scanning is performed by moving the substrate 50 in the positive direction of the Y-axis in this state. In the fourth scanning, as in the third scanning, droplets of the film material are caused to bounce inside the region where the thin film pattern 55 (Fig. 3) is formed. A planar pattern 64 having edges formed by the edge pattern 60 formed in the first scanning is formed. The ultraviolet light source 25 (Fig. 5B) is also turned off in the fourth scan. status. Therefore, the planar pattern 64 remains in an uncured state.

Since the planar pattern 62 formed in the third scanning and the planar pattern 64 formed in the fourth scanning are both in an uncured state, the film material is mixed in the vicinity of the boundary between the two. Therefore, the boundary line 63 of the unit scanning area 56 becomes a state that is almost indistinct.

Fig. 4I is a plan view showing the substrate 50 and the nozzle unit 23 before and after the fifth scanning. A cross-sectional view of a dotted line 4J-4J in Fig. 4I is shown in Fig. 4J. A cross-sectional view of a dotted line 5C-5C of Fig. 4I is shown in Fig. 5C. After the fourth scan, the fifth scan is performed by moving the substrate 50 in the negative direction of the Y-axis. In the fifth scanning, droplets of the film material are not ejected from the nozzle head 24 (Fig. 5C), and only ultraviolet rays by the ultraviolet light source 25 are irradiated. The planar pattern 64 in the uncured state is temporarily cured by ultraviolet irradiation. In Figure 4I, densely hatched areas are added to the temporarily cured areas, and the uncured areas are sparsely hatched. The other drawings indicated later are also the same.

4K shows a plan view of the substrate 50 and the nozzle unit 23 before and after the sixth scanning. A cross-sectional view of a dotted line 4L-4L in Fig. 4K is shown in Fig. 4L. After the fifth scanning, the substrate 50 is moved in the negative direction of the X-axis by only the distance equal to the width W of the unit scanning region 56 (Fig. 3). The sixth scanning is performed by moving the substrate 50 in the positive direction of the Y-axis in this state. In the sixth scanning, it is not necessary to discharge droplets of the film material from the nozzle head 24 (Fig. 5C), and only the irradiation of the ultraviolet rays by the ultraviolet light source 25 is performed. The uncured state of the planar pattern 62 is temporarily cured by ultraviolet irradiation.

The effects of the film formation method according to the first embodiment will be described with reference to FIGS. 6A and 6B. 6A and 6B are cross-sectional views each showing a film pattern formed by the method based on the comparative example and the first embodiment.

In the comparative example shown in Fig. 6A, the film pattern was formed without distinguishing the edges and the inside of the film pattern 55 (Fig. 3). When the substrate 50 is scanned, the ultraviolet light source 25 (Fig. 2A, Fig. 2B) is opened in advance, and the film material is temporarily cured immediately after the film material is bounced. As shown in FIGS. 2A and 2B, the ultraviolet light source 25 is disposed between the nozzle heads 24. Therefore, after the droplets of the film material ejected from the one nozzle head 24 are bounced on the substrate 50, the film material that is ejected immediately before the droplets of the film material ejected from the next nozzle head 24 are bounced on the substrate 50. Cured.

Therefore, the same one of the droplets 55a of the film material discharged from the nozzle holes 24a (Figs. 2A and 2B) overlaps in a distinguishable state. Concavities and convexities are formed on the surface of the thin film pattern 55 in correspondence with the respective droplets 55a. This unevenness can be observed as a strip pattern extending in the Y direction.

As shown in FIG. 6B, in the method of Embodiment 1, edge patterns 60, 61 are formed at the edges of the film pattern 55, and planar patterns 62, 64 are formed inside the film pattern 55. The film material constituting the edge patterns 60, 61 is the same as in the case of Fig. 6A, and the liquid droplets 55a are overlapped in a distinguishable state. That is to say, the other droplets are bounced and temporarily solidified in a partially overlapping manner on the film material which is bounced on the substrate 50 and temporarily cured. Therefore, edge patterns 60, 61 having a height higher than that of the film material formed by temporarily curing one droplet can be obtained. However, in the planar patterns 62 and 64, a plurality of droplets of the film material are diffused in the in-plane direction of the substrate to form a film having a substantially uniform thickness. After (Fig. 4G), it was temporarily cured (Fig. 4I, Fig. 4K). Therefore, the surfaces of the planar patterns 62, 64 become substantially flat.

In order to flatten the surface of the planar patterns 62, 64, in the step of FIG. 4E, the film material that is bounced on the substrate is diffused in the in-plane direction of the substrate, and the film material that is bounced on the plurality of impact points is continuous and becomes indistinguishable from each other. After the adjacent impact point, in the step of FIG. 4K, the film material of the planar pattern 62 is cured to be preferable.

In the first embodiment, as shown in FIGS. 4A and 4B, the edge patterns 60 and 61 are formed in the region corresponding to the edge of the thin film pattern 55 in the one unit scanning region 56 (FIG. 3) by one-pass scanning. . It is only deviated from the X direction by a distance corresponding to 1/2 of the pitch P (Fig. 2B), and by scanning back and forth, the resolution in the X direction can be increased by a factor of two.

The step of forming the planar pattern 62 shown in FIG. 4E and the step of forming the planar pattern 64 shown in FIG. 4G do not require the droplets of the film material to be bounced on the image data of the raster format defining the thin film pattern 55. All pixels within the physical area. As an example, the arrangement pitch of the pixels is about 10 μm, and a circular pattern having a diameter of about 50 μm is formed by the droplets that are bounced on one pixel. Therefore, the pixels in the physical area can be spaced to extract the impact point. That is, the distribution density of the impact points when the planar patterns 62, 64 are formed can be made lower than the distribution density of the impact points when the edge patterns 60, 61 are formed. Further, the distribution density of the impact point when the planar patterns 62 and 64 are formed can be reduced, and the droplet volume discharged from the nozzle hole 24a (Fig. 2A) can be increased every time. By increasing the droplet volume, the planar patterns 62, 64 can be set to a desired thickness even if the distribution density of the impact point is lowered.

[Embodiment 2]

Next, a method of forming a thin film according to the second embodiment will be described with reference to FIGS. 7A to 7E. Hereinafter, differences from the first embodiment will be described, and the description of the same configurations will be omitted. The edge pattern 60 shown in Fig. 4A of the first embodiment is formed by the first scanning.

Fig. 7A is a plan view showing the substrate 50 and the nozzle unit 23 before and after the second scanning. After the first scan, the second scan is performed by moving the substrate 50 in the positive direction of the Y-axis. In the second scanning, an uncured planar pattern 64 is formed in the unit scanning region 56 which is the same as the unit scanning region 56 (FIG. 3) in which the edge pattern 60 is formed.

Fig. 7B is a plan view showing the substrate 50 and the nozzle unit 23 before and after the third scanning. After the second scanning, the third scanning is performed by moving the substrate 50 in the negative direction of the Y-axis without deviating in the X direction. In the third scanning, droplets of the film material are not ejected from the nozzle unit 23, and only ultraviolet rays from the ultraviolet rays 25 (Figs. 2A and 2B) are irradiated. Thereby, the planar pattern 64 is temporarily cured.

Fig. 7C is a plan view showing the substrate 50 and the nozzle unit 23 before and after the fourth scanning. After the third scanning, the substrate 50 is shifted by a distance equal to the width W of the unit scanning region 56 (Fig. 3) in the negative direction of the X-axis. Thereafter, the fourth scanning is performed by moving the substrate 50 in the positive direction of the Y-axis. In the fourth scanning, the edge pattern 60 is formed in the first to third scanning, and the thin film pattern 55 is formed in the unit scanning region 56 adjacent to the unit scanning region 56 (FIG. 3) formed by the planar pattern 64. The edge corresponds to the edge pattern 61. The edge pattern 61 is temporarily cured during the fourth scan.

As shown in FIG. 7D, the uncured planar pattern 62 is formed by performing the fifth scanning. As shown in FIG. 7E, the planar pattern 62 is temporarily cured by performing the sixth scanning. The steps of FIGS. 7D and 7E are the same as the steps of forming the planar pattern 64 shown in FIGS. 7A and 7B.

In the first embodiment, after the edge patterns 60 and 61 are formed on the portions corresponding to the edges of the thin film pattern 55 (Fig. 3) (Figs. 4A to 4D), the planar patterns 62 and 64 are formed (Figs. 4E to 4L). In the second embodiment, after forming the edge pattern and the planar pattern in one unit scanning region 56 (FIG. 3), the edge pattern and the planar pattern in the side unit scanning region 56 are formed. Also in the second embodiment, as in the case of the first embodiment, the surfaces of the planar patterns 62 and 64 become flat.

In the second embodiment, after the planar pattern 64 (FIG. 7B) is temporarily cured, the planar pattern 62 in the side unit scanning region 56 (FIG. 7D) is formed, and therefore, it is easier to observe than in the first embodiment. The dividing line 63 of the unit scan area 56 (Fig. 7E). However, a plurality of strip patterns corresponding to the number of nozzle holes 24a cannot be observed.

[Example 3]

A method of forming a film based on Example 3 will be described with reference to Figs. 8A to 8D. Hereinafter, differences from the second embodiment will be described, and the description of the same configurations will be omitted. The nozzle unit 23 (Fig. 2A) of the film forming apparatus used in the second embodiment includes four nozzle heads 24. Used in Example 3 The nozzle unit 23 of the film forming apparatus includes eight nozzle heads 24.

FIG. 8A is a plan view showing the substrate 50 and the nozzle unit 23 before and after the first scanning. The nozzle unit 23 is composed of two subunits 23A and 23B. The respective structures of the subunits 23A, 23B are the same as those of the nozzle unit 23 (Fig. 2A) of the first embodiment. The subunits 23A and 23B are arranged at a predetermined interval in the Y direction. The sub-unit 23A is disposed on the positive side of the Y-axis than the sub-unit 23B.

The first scanning is performed by moving the substrate 50 in the negative direction of the Y-axis. In the first scan, the edge pattern 60 is formed by the sub-unit 23A. The ultraviolet light source 25 of the sub-unit 23A is opened in advance. Therefore, the formed edge pattern 60 becomes a temporarily cured state.

During the first scanning period, the sub-unit 23B is further used to form the planar pattern 64. The ultraviolet light source 25 of the subunit 23B is turned off in advance. Therefore, the formed planar pattern 64 is in an uncured state. After the edge pattern 60 is temporarily cured, the film material for forming the planar pattern 64 is discharged from the sub-unit 23B. In order to block the film material discharged from the sub-unit 23B, the edge pattern 60 does not immerse into the opening.

FIG. 8B is a plan view showing the substrate 50 and the nozzle unit 23 before and after the second scanning. After the first scanning, the second scanning is performed by moving the substrate 50 in the positive direction of the Y-axis without deviating in the X direction. In the second scanning, at least one of the ultraviolet light sources 25 of the subunits 23A and 23B is opened in advance. Thereby, the planar pattern 64 is temporarily cured.

As shown in FIG. 8C, after the second scanning, the substrate 50 is moved only in the negative direction of the X-axis to be equal to the width W of the unit scanning region 56 (FIG. 3). The distance. By performing the third scanning in this state, the temporarily cured edge pattern 61 and the uncured surface pattern 62 are formed. The third scan is the same as the first scan shown in Fig. 8A.

As shown in FIG. 8D, the fourth scan is performed in the same manner as the second scan shown in FIG. 8B. The planar pattern 62 is temporarily cured by the fourth scanning.

In the second embodiment, a thin film pattern is formed in one unit scanning region 56 (Fig. 3) by three scanning operations. In the third embodiment, a thin film pattern can be formed in one unit scanning region 56 (FIG. 3) by two scanning operations.

[Example 4]

A method of forming a thin film according to the fourth embodiment will be described with reference to FIGS. 9 and 10A to 10C. Hereinafter, differences from the third embodiment will be described, and the description of the same configurations will be omitted.

Fig. 9 is a plan view showing a nozzle unit 23 based on the film forming apparatus of the fourth embodiment. The nozzle unit 23 includes two subunits 23A, 23B. Each of the subunits 23A and 23B is attached to the same nozzle jig 26, and has the same configuration as the nozzle unit 23 (Figs. 2A and 2B) of the first embodiment. That is, each of the sub-units 23A, 23B includes four nozzle heads 24 and five ultraviolet light sources 25. The two sub-units 23A, 23B are disposed at the same position in the X direction. The sub-unit 23A is disposed on the positive side of the Y-axis than the sub-unit 23B.

Further, the nozzle unit 23 of the fourth embodiment has two ultraviolet light sources 70 for solid areas. Each of the physical regions has a shape in which the ultraviolet light source 70 has a long length in the X direction, and the opposite subunits 23A, 23B are fixed to the negative X axis. The direction is only shifted from the position equal to 1/2 of the width W of the unit scanning area 56 (Fig. 3). In the Y direction, the two physical regions are arranged by the ultraviolet light source 70 to sandwich the two subunits 23A, 23B.

FIG. 10A is a plan view showing the substrate 50 and the nozzle unit 23 before and after the first scanning. The subunits 23A, 23B are disposed at positions corresponding to the unit scanning region 56 corresponding to the most negative side in the X direction. The first scanning is performed by moving the substrate 50 in the negative direction of the Y-axis.

In the first scanning, the nozzle head 24 and the ultraviolet light source 25 of the subunit 23A are operated to form the edge pattern 60. At the same time, the nozzle head 24 of the subunit 23B is operated to form the planar pattern 64. Further, by opening the solid area ultraviolet light source 70 disposed on the negative side of the Y-axis, the half area of the negative side of the X-direction of the planar pattern 64 is temporarily solidified. The droplets of the thin film material discharged from the nozzle head 24 of the subunit 23B are temporarily solidified by the ultraviolet light source 70 in the solid region, and are diffused in the in-plane direction than the droplets of the thin film material adhering to the substrate, and are planar. The time required for the pattern 64 to become a uniform film thickness is long. Therefore, the surface of the portion of the planar pattern 64 that has been temporarily cured becomes substantially flat. The time from the adhesion of the film material to the temporary curing can be controlled by adjusting the interval between the sub-unit 23B and the solid region on the negative side in the Y direction by the ultraviolet light source 70.

FIG. 10B is a plan view showing the substrate 50 and the nozzle unit 23 before and after the second scanning. After the first scanning, the substrate 50 is moved in the negative direction of the X-axis by only the distance equal to the width W of the unit scanning region 56. The second scanning is performed by moving the substrate 50 in the positive direction of the Y-axis in this state. In the second scan, the nozzle head 24 of the subunit 23B is The ultraviolet light source 25 operates to form the edge pattern 61. The nozzle head 24 of the subunit 23A is operated to form the planar pattern 62. Further, by opening the ultraviolet light source 70 for the solid region disposed on the positive side in the Y direction, the uncured portion of the planar pattern 64 and a portion of the planar pattern 62 on the negative side in the X direction are temporarily cured.

Fig. 10C is a plan view showing the substrate 50 and the nozzle unit 23 before and after the third scanning. After the second scanning, the substrate 50 is moved in the negative direction of the X-axis by only the distance equal to the width W of the unit scanning region 56. The third scanning is performed by moving the substrate 50 in the negative direction of the Y-axis in this state. The third scan is performed in the same order as the first scan. Thereby, the edge pattern 65 and the planar pattern 66 are formed in the unit scanning region 56 adjacent to the positive side in the X direction with respect to the unit scanning region 56 in which the thin film pattern is formed in the second scanning. At this time, the uncured portion of the planar pattern 62 is temporarily cured by ultraviolet rays from the ultraviolet light source 70 from the solid region, and a portion of the negative side of the X-direction of the planar pattern 66 is temporarily cured. By performing the same scanning in reverse, a thin film pattern can be formed over the entire area of the substrate 50.

In Example 4, the formation of the edge pattern, the formation of the planar pattern, and the temporary curing of a part of the planar pattern were performed in one scan. Therefore, compared with the third embodiment, the thin film pattern can be formed with a small number of scans.

In the fourth embodiment, when focusing only on the inner region (physical region) of the thin film pattern 55 (Fig. 3), the following steps are sequentially performed.

First, the substrate 50 is moved in the Y direction, and the droplet of the film material is caused to slide in the X direction to the first unit scan of the first width W. Within area 56 (Fig. 10A). Thereby, the planar pattern 64 is formed in the first unit scanning region 56. During the scanning period, a portion of the film material adhering to the negative side in the X direction in the first unit scanning region 56 is temporarily cured.

Thereafter, while the substrate 50 is moved in the Y direction, droplets of the film material are caused to be in the second unit scanning region 56 adjacent to the positive side in the X direction of the first unit scanning region (FIG. 10B). Thereby, the planar pattern 62 is formed in the second unit scanning region 56. During the scanning period, the film material adhered to the uncured portion on the positive side in the X direction and the portion on the negative side in the X direction in the second unit scanning region 56 in the first unit scanning region 56 is temporarily cured.

As described above, only one portion of the planar patterns 64, 62 is temporarily cured in one scan. With the same scanning, the film material is attached to the temporarily cured region and the region remaining in the uncured state, so that the boundary between the two can be made inconspicuous. Further, in FIG. 10B, the film material for forming the planar pattern 62 is adhered to the substrate 50, and the region on the positive side in the X direction of the planar pattern 64 is not temporarily cured. Therefore, the film materials are mixed with each other in the vicinity of the boundary between the planar pattern 64 and the planar pattern 62. Therefore, the boundary line between the planar pattern 62 and the planar pattern 64 can be made inconspicuous.

[Example 5]

A method of forming a film based on Example 5 will be described with reference to Figs. 11 to 17B. Hereinafter, differences from the first embodiment will be described, and the description of the same configurations will be omitted. Before the description of Example 5, the evaluation test will be described.

Fig. 11 is a bottom view showing the nozzle unit used in the evaluation test. The nozzle unit 23R includes a nozzle head 24, a light source 25, and a nozzle holder (support mechanism) 26 that supports the nozzle head and the light source. The nozzle head 24 is provided with a plurality of nozzle holes 24a which are arranged in a regular manner and which discharge a solder resist. Each of the nozzle holes 24a includes, for example, a piezoelectric element, and discharges a solder resist in accordance with application of a voltage pulse. The discharge of the solder resist from the nozzle holes 24a is controlled by the control device 40. The light sources 25 are disposed on both sides of the nozzle holes 24a in the direction in which they are arranged. The interval between the light source 25 and the nozzle hole 24a is indicated by L. The light source 25 photocures the solder resist that is discharged from the nozzle holes 24a and adheres to the substrate. The light source 25 is provided with an optical system that makes the emitted light into parallel light. Further, the nozzle head 24 is disposed on the light source 25 on the positive side of the Y-axis, and when the substrate is scanned in the positive direction of the Y-axis, the solder resist adhering to the substrate 50 (FIG. 1) is photocured. The nozzle head 24 is disposed on the light source 25 on the negative side of the Y-axis, and when the substrate 50 is scanned in the negative direction of the Y-axis, the solder resist adhering to the substrate is photocured. Therefore, the light source 25 can be disposed only on one side of the arrangement of the nozzle holes 24a in accordance with the scanning method of the substrate.

FIG. 12 is a side view showing the substrate 50 being scanned. The control device 40 (FIG. 1) moves the substrate 50 at a constant conveyance speed with respect to the nozzle unit 23R, for example, in the negative direction of the Y-axis. Further, the control device 40 applies a voltage pulse to the nozzle hole 24a at a predetermined cycle in accordance with the image data stored in advance, and discharges the solder resist from the nozzle hole 24a. The nozzle hole 24a discharges a solder resist toward the surface of the substrate 50 vertically below the nozzle hole 24a by the application of a voltage pulse starting from the time T1. The droplets of the solder resist discharged from the nozzle holes 24a gradually expand toward the in-plane direction of the substrate 50 after being bounced on the substrate 50. Scattered. The solder resist adhered to the substrate 50 and diffused in the in-plane direction moves in the negative direction of the Y-axis in association with the movement of the substrate 50. At time T2 when moving from the nozzle hole 24a away from the vertical direction of the light source 25 of the space L, the solder resist is cured by the light from the light source 25. The step of discharging and curing is repeated, and a thin film pattern made of a solder resist is formed on the surface of the substrate 50.

A plan view of a film pattern to be formed on the substrate 50 is shown in Fig. 13A. The thin film pattern to be formed on the substrate 50 includes an insulating region 51 in which a solder resist is formed and a terminal region 52 in which a solder resist is not formed. Further, the fine region 50a including the terminal region 52 and the insulating region 51 cover the entire solid region 50b. Further, in the figure, hatching is added to the insulating region 51. The control device 40 (Fig. 1) causes the substrate 50 to be ejected from the nozzle holes 24a while moving the substrate 50 relative to the nozzle unit 23R in accordance with the image data of the film pattern. The solder resist adhering to the substrate 50 is cured by light from the light source 25 to form a thin film pattern composed of a solder resist. The droplets of the solder resist discharged from the nozzle holes 24a gradually spread toward the in-plane direction of the substrate 50 after being bounced on the substrate 50. The solder resist is cured by light irradiation from the light source 25 to maintain its shape.

A cross-sectional view taken along line 13-13 of Fig. 13A is shown in Figs. 13B and 13C. When the gap L (Fig. 11) of the nozzle hole 24a of the nozzle unit 23R and the light source 25 is small, the solder resist which is bounced on the substrate 50 is photocured at a relatively early time. Since the solder resist that is bounced on the substrate 50 is cured before being largely diffused, it can be formed corresponding to the fine film pattern as shown in the fine region 50a of FIG. 13B. On the other hand, the shape of the droplets is slightly residual, such as As shown in the solid region 50b of Fig. 13B, the film thickness of the formed thin film pattern becomes uneven (concavities and convexities appear on the surface). Further, when the interval L between the nozzle holes 24a and the light source 25 is large, the solder resist which is bounced on the substrate 50 is solidified at a later time point. Since the solder resist that is bounced on the substrate 50 is solidified after being largely diffused, the terminal region 52 is covered with the solder resist as shown in the fine region 50a of FIG. 13C, and the formation of the fine thin film pattern cannot be performed. On the other hand, as shown in the solid region 50b of Fig. 13C, the film thickness of the formed thin film pattern becomes uniform (the surface becomes flat).

When the thin film pattern is formed in the fine region 50a, it is preferable to cure the solder resist impinging on the substrate 50 at a relatively early point in time to improve the positional accuracy of the thin film pattern. When the thin film pattern is formed in the solid region 50b, it is preferable that the solder resist that is placed on the substrate 50 is cured at a relatively late point in time from the viewpoint of appearance to make the film thickness of the thin film pattern uniform.

Fig. 14 is a bottom view showing the nozzle unit according to the fifth embodiment. The nozzle unit 23 according to the fifth embodiment includes a nozzle head 24, light sources 25a and 25b, and a nozzle holder (support mechanism) 26 that supports the nozzle head and the light source. A plurality of nozzle holes 24a arranged in a regular manner are disposed on the nozzle head 24. For example, the opening diameter of the nozzle hole 24a is about 30 μm, and the pitch of each nozzle hole 24a is about 80 μm. The light sources 25a and 25b are arranged on both sides of the nozzle hole 24a. The interval between the light source 25a and the nozzle hole 24a is indicated by L1. The interval L2 between the light source 25b and the nozzle hole 24a is larger than the interval L1. For example, the interval L1 between the nozzle hole 24a and the light source 25a is about 0.3 mm, and the interval L2 between the nozzle hole 24a and the light source 25b is about 1.0 mm. The light sources 25a and 25b are provided with an optical system that makes the emitted light into parallel light. Discharge of solder resist from nozzle hole 24a The on/off of the light sources 25a, 25b is controlled by the control unit 40. Further, the light source 25a, 25b disposed on the positive side of the Y-axis with respect to the nozzle head 24 solidifies the solder resist adhering to the substrate 50 when the substrate 50 (FIG. 1) moves in the positive direction of the Y-axis. The light source 25a, 25b disposed on the positive side of the Y-axis with respect to the nozzle head 24 solidifies the solder resist adhering to the substrate 50 when the substrate 50 moves in the negative direction of the Y-axis. Therefore, the light sources 25a and 25b can be disposed only on one side of the arrangement of the nozzle holes 24a in accordance with the scanning method of the substrate 50.

15A and 15B are side views showing the nozzle unit 23 and the substrate 50 when a thin film pattern is formed by the method of the fifth embodiment. The control device 40 (FIG. 1) moves the substrate 50 at a constant conveyance speed with respect to the nozzle unit 23, for example, in the negative direction of the Y-axis. The control device 40 applies a voltage pulse to the nozzle hole 24a at a predetermined cycle in accordance with the image data of the film pattern to discharge the solder resist from the nozzle hole 24a. For example, the substrate 50 has a transport speed of about 300 mm/s, and the nozzle head 24 discharges the solder resist at a frequency of about 30 kHz. Further, the height from the substrate 50 to the nozzle head 24 is about 0.5 mm to 1 mm, and the height of the light sources 25a and 25b is about 20 mm to 30 mm. When the region where the solder resist is bounced is the fine region 50a (Fig. 13A), as shown in Fig. 15A, the control device 40 cures the solder resist by light irradiation from the light source 25a disposed at a position relatively close to the nozzle hole 24a. For example, the solder resist that is bounced on the fine region 50a is cured after about 0.1 s after being bounced on the substrate 50. When the region where the solder resist is bounced is the solid region 50b (Fig. 13A), as shown in Fig. 15B, the solder resist is cured by light irradiation from the light source 25b disposed at a position relatively far from the nozzle hole 24a. For example, playing The solder resist in the solid region 50b is cured after about 0.3 s after being bounced on the substrate 50.

Fig. 16A is a plan view showing a film pattern formed on the substrate 50, and Fig. 16B is a cross-sectional view taken along the arrow line 16B-16B of Fig. 16A. The thin film pattern to be drawn on the substrate 50 includes a fine region 50a in which the terminal region 52 is dense, and a solid region 50b in which the insulating region 51 covers the entire surface. In Fig. 16A, hatching is added to the insulating region 51. In the fifth embodiment, the zoning information of the fine region 50a and the solid region 50b of the thin film pattern to be formed is previously stored in the control device 40 (FIG. 1). For example, the fine area 50a corresponds to an area in which an integrated circuit device (IC, LSI) having a package such as a BGA (Ball Grid Array) is actually mounted. Further, the solid region 50b corresponds to a region where the discrete component is actually mounted, or a region where the entire surface is covered by the thin film pattern of the solder resist. The control device 40 (Fig. 1) causes the substrate 50 to be ejected from the nozzle holes 24a while moving the substrate 50 relative to the nozzle unit 23 in accordance with the image data of the film pattern. Further, according to the zoning information of the fine region 50a and the solid region 50b, the solder resist adhering to the fine region 50a is cured by light from the light source 25a, and the solder resist attached to the solid region 50b is irradiated with light from the light source 25b. Cured. As shown in Fig. 16B, by such a thin film pattern forming operation, the positional accuracy of the edge of the thin film pattern can be improved in the fine region 50a of the substrate 50, and the film thickness of the formed thin film pattern can be made uniform in the solid region 50b. . Further, the control device 40 can automatically set the fine region 50a and the solid region 50b from the image data of the thin film pattern in accordance with the size of the insulating region 51 and the terminal region 52 and their density.

17A and 17B are plan views showing a nozzle unit and a substrate according to a modification of the fifth embodiment. As shown in FIG. 17A, the number of light sources provided in the nozzle unit 23 is not limited to two, and may be three or more, and a mechanism capable of changing the arrangement position may be provided. Alternatively, the light source may be formed by a plurality of light emitting diodes (LEDs) arranged along the arrangement of the nozzle holes. A plurality of LEDs can be individually controlled to be turned on/off by the control device. With such a configuration, the region irradiated by one LED is a unit region, and the fine region 50a and the solid region 50b can be more precisely arranged in the X-axis direction. Further, the light source may be separated from the nozzle unit 23 and attached to, for example, a frame of the film forming apparatus. The light source mounted to the frame can be provided with a mechanism capable of changing the position of the arrangement.

Further, as shown in Fig. 17B, the nozzle head 24 provided in the nozzle unit 23 may have a structure in which the nozzle holes 24a are arranged in a meander shape (zigzag shape). The plurality of nozzle holes 24a constitute, for example, nozzle rows 24I and 24J which are arranged in two rows in the Y-axis direction. The nozzle holes 24a constituting each of the nozzle rows 24I and 24J are arranged at a pitch 8P in the X-axis direction. The nozzle hole 24a constituting one of the nozzle rows 24I is disposed to face the nozzle hole 24a of the other nozzle row 24J, and is disposed only by 4P in the X-axis direction. By providing the nozzle head 24 in such a configuration, it is possible to easily improve the resolution in the X-axis direction without being restricted by the supply mechanism of the solder resist to the nozzle holes 24a or the size or arrangement of the piezoelectric elements.

[Embodiment 6]

Referring to FIGS. 18A to 20B, a film forming method based on Example 6 Be explained. The differences from the fifth embodiment will be described below, and the description of the same configurations will be omitted.

18A to 18C are side views showing the nozzle unit 23 and the substrate 50 of the thin film forming apparatus of the sixth embodiment. The nozzle unit 23 of the film forming apparatus according to the sixth embodiment includes a nozzle head 24, a light source 25, and a rotating mechanism 27 that can rotate the light source 25 around the rotation axis parallel to the X-axis direction. The rotation mechanism 27 can move the irradiation position of the light emitted from the light source 25 on the surface of the substrate 50 in the Y-axis direction by rotating the light source 25. The light source 25 is controlled by the control device 40 based on the rotation of the rotating mechanism 27.

The control device 40 moves the substrate 50 at a constant conveyance speed with respect to the nozzle unit 23, for example, in the negative direction of the Y-axis. The control device 40 applies a voltage pulse to the nozzle hole 24a at a predetermined cycle in accordance with the stored image data to discharge the solder resist from the nozzle hole 24a. For example, the substrate 50 has a transport speed of about 300 mm/s, and the nozzle head 24 discharges the solder resist at a frequency of about 30 kHz. Further, the height from the substrate 50 to the nozzle head 24 is about 0.5 mm to 1 mm, and the height from the light source 25 is about 20 mm to 30 mm.

As shown in FIG. 18A, when the region where the solder resist is bounced is the fine region 50a (FIG. 16A), the control device 40 is placed closer to the nozzle hole 24a, for example, at a position vertically lower than the light source 25, so as to be attached to the substrate 50. The rotation mechanism 27 is controlled in such a manner that the solder resist is photocured. For example, the solder resist that is bounced on the fine region 50a is cured after about 0.1 s after being bounced on the substrate 50. Further, as shown in FIG. 18B, when the region where the solder resist is bounced is the solid region 50b (FIG. 16A), for example, at a position farther from the nozzle hole 24a than the position vertically below the light source 25, the adhesion to the substrate 50 is blocked. weld The rotating mechanism 27 is controlled in such a manner that the agent cures. For example, the solder resist that is bounced on the solid region 50b is cured after about 0.3 s after being bounced on the substrate 50.

Further, the mechanism for moving the irradiation position of the light beam from the light source 25 to the substrate is not limited to the rotation mechanism. As shown in Fig. 18C, the irradiation position of the light emitted from the light source 25 toward the substrate can also be moved by the optical system 28.

Fig. 19A is a plan view showing the substrate 50 on which the thin film pattern is formed and the nozzle unit 23. A cross-sectional view of the arrow line 19B-19B of Fig. 19A is shown in Fig. 19B. The film pattern to be formed on the substrate 50 is the same as that of the fifth embodiment, and includes a fine region 50a in which the terminal region 52 is dense, and a solid region 50b in which the entire surface is covered with the insulating region 51. In Fig. 19A, hatching is added to the insulating region 51.

The control device 40 (Figs. 18A to 18C) causes the substrate 50 to be ejected from the nozzle holes 24a while moving the substrate 50 relative to the nozzle unit 23 in accordance with the image data of the film pattern. The control device 40 controls the rotation mechanism 27 based on the division information of the fine area 50a and the physical area 50b. The solder resist impinging on the fine region 50a is solidified to a position relatively close to the nozzle hole 24a (Fig. 18A). The solder resist impinging on the solid region 50b is cured to a position relatively far from the nozzle hole 24a (Fig. 18B).

As shown in Fig. 19B, by such a film forming operation, the positional accuracy of the edge of the film pattern can be improved in the fine region 50a of the substrate 50, and the film pattern of the formed solder resist can be formed in the solid region 50b. The thickness becomes uniform.

A nozzle unit according to a modification of the embodiment 6 is shown in Fig. 20 . As shown in FIG. 20, the irradiation position moving mechanism for moving the light sources 25a to 25c of the nozzle unit and the irradiation position of the light emitted from the light sources 25a to 25c to the substrate is not limited to one, and may be two or more. There is a mechanism that can change the configuration position. For example, the light sources 25a to 25c are composed of a plurality of light emitting diodes (LEDs) arranged along the arrangement of the nozzle holes 24a. A plurality of irradiation position moving mechanisms capable of moving the irradiation position of the light emitted from the respective LEDs to the substrate may be included. The plurality of irradiation position moving mechanisms can be independently controlled by the control device 40 (Figs. 18A to 18C). By providing such a configuration, the area irradiated by one LED is a unit area, and the fine area 50a and the solid area 50b can be arranged more precisely in the X-axis direction. Further, the light sources 25a to 25c and the irradiation position moving mechanism may be separated from the nozzle unit 23, and may be attached to, for example, a frame of the film forming apparatus. Further, the light sources 25a to 25c and the irradiation position moving mechanism may be provided with a mechanism capable of changing the arrangement position.

[Embodiment 7]

Next, a film forming method based on Example 7 will be described with reference to Figs. 21A to 21D. Hereinafter, differences from the first embodiment will be described, and the description of the same configurations will be omitted.

In the first to sixth embodiments, a film pattern of a solder resist was formed on the surface of the printed wiring board. In Example 7, an insulating film of the inner layer of the build-up substrate was formed.

As shown in FIG. 21A, on the surface of the core substrate 80, copper or the like is formed. The first wiring pattern 81 is configured. The first wiring pattern 81 is formed by, for example, forming a conductive film formed by a plating method.

As shown in FIG. 21B, an insulating film (thin film pattern) 82 is formed on the core substrate 80 and the first wiring pattern 81. The film formation method based on Examples 1 to 6 can be applied to the formation of the insulating film 82. The insulating film 82 is made of, for example, an epoxy resin. The insulating film 82 made of an epoxy resin can be formed by discharging droplets of epoxy resin from the nozzle unit 23 (FIG. 1 and the like). A plurality of through holes 83 are provided in the insulating film 82. A part of the first wiring pattern 81 is exposed in the through hole 83. By applying the thin film formation methods according to the first to sixth embodiments, the through holes 83 can be formed in the insulating film 82 without performing processing such as lithography or etching.

As shown in FIG. 21C, a second wiring pattern 84 made of copper or the like is formed on the insulating film 82. For the formation of the second wiring pattern 84, for example, a semi-additive method can be applied. The second wiring pattern 84 is connected to the first wiring pattern 81 via the through hole 83. Since the formation of the insulating film 82 is performed by the thin film forming methods of the first to sixth embodiments, the surface of the insulating film 82 can be made flat. Since the surface of the underlayer on which the second wiring pattern 84 is formed is flat, the formation of the second wiring pattern 84 can be applied to the same semi-additive method as in the related art.

As shown in FIG. 21D, an insulating film 85 is formed on the insulating film 82 and the second wiring pattern 84. The film formation method based on Examples 1 to 6 can be applied to the formation of the insulating film 85. When the second wiring pattern 84 is the uppermost wiring pattern, the insulating film 85 is made of a solder resist. When a wiring pattern is further formed on the insulating film 85, the insulating film 85 is made of an epoxy resin or the like.

[Embodiment 8]

A bottom view of the nozzle unit 23 based on the thin film forming apparatus of the eighth embodiment is shown in Fig. 22A. Hereinafter, differences from the first embodiment will be described, and the description of the same configurations will be omitted.

In the first embodiment, a plurality of nozzle heads 24 are arranged in the Y-axis direction, that is, in the scanning direction of the substrate 50 (Fig. 1). In the eighth embodiment, a plurality of (for example, three) nozzle heads 24 are arranged in the X-axis direction, that is, in the direction perpendicular to the scanning direction. The arrangement direction of the nozzle holes 24a is the same as that of the first embodiment, and is parallel to the X-axis. An ultraviolet light source 25 is disposed on each of both sides (positive side and negative side of the Y axis) of each nozzle head 24.

The spacing of the nozzle heads 24 is equal to the width W of the unit scanning area 56 (Fig. 3). By scanning the substrate 50 once in the Y-axis direction (FIG. 1), droplets of the thin film material can be bounced in three unit scanning regions 56 (FIG. 3) arranged at intervals W in the X direction. By merely shifting the distance W in the X-axis direction and further scanning in the Y-axis direction, the droplets of the film material can be bounced in the six unit scanning regions 56 that are continuous in the X-axis direction. By increasing the number of scanning in the Y-axis direction with respect to one unit scanning area 56, the resolution of the thin film pattern in the X-axis direction can be improved.

As shown in FIG. 22B, the nozzle head 24 can be arranged in a matrix in the X-axis direction and the Y-axis direction. The plurality of (for example, four) nozzle heads 24 arranged in the Y-axis direction are the same as those of the nozzle head 24 according to the first embodiment shown in FIGS. 2A and 2B. By arranging the nozzle heads 24 in a matrix, the number of scans required to form a thin film pattern can be reduced.

[Embodiment 9]

Fig. 23 is a bottom view showing the nozzle unit 23 of the film forming apparatus of the ninth embodiment. Hereinafter, differences from the first embodiment will be described, and the description of the same configurations will be omitted.

In the first embodiment, although a plurality of nozzle heads 24 are arranged in the Y-axis direction, a plurality of (for example, four) nozzle heads 24 in the ninth embodiment are arranged in the X-axis direction. As the entire four nozzle heads 24, the nozzle holes 24a are arranged at equal intervals in the X-axis direction (the pitch is 4P in Fig. 2B). The relative positions of the nozzle heads 24 in the X direction are also adjusted between the nozzle heads 24 adjacent to each other in the X-axis direction so that the pitch of the nozzle holes is equal to the pitch of the nozzle holes in the nozzle head 24. For this adjustment, the nozzle heads 24 adjacent in the X-axis direction are arranged to be offset from each other in the Y-axis direction. By the four nozzle heads 24, the droplets of the film material can be ejected in a region having a width of 4 W by one scanning.

The sequence in which the edge pattern 60 is formed will be described with reference to FIGS. 24A to 24D. The edge pattern 60 is composed of, for example, a plurality of pixels arranged at a pitch P. The edge pattern 60 after the end of the first to fourth scans is shown in Figs. 24A to 24D, respectively. In Figs. 24A to 24D, the pixels in which the thin film material is bombarded are indicated by black circles, and the pixels in which the thin film material is not present are indicated by open circles.

By the first scanning, the film material is bounced on every three pixels in the X-axis direction. After the first scanning is completed, the substrate 50 (FIG. 1) is shifted from the nozzle unit 23 by the distance equal to the pitch P in the X-axis direction to perform the second scanning. Similarly, by performing the 3rd and 4th sweeps The film material can be caused to bounce all of the pixels constituting the edge pattern 60. After the edge pattern 60 is formed, the planar patterns 62 and 64 are formed in the same manner as in the first embodiment (Figs. 4G to 4L).

As shown in the ninth embodiment, when a plurality of nozzle heads 24 are arranged in the X-axis direction (direction perpendicular to the scanning direction), the range of the X-axis direction of the film material can be made to be changed by one scanning. width.

Although the invention has been described above based on the above embodiments, the invention is not limited thereto. Those skilled in the art will appreciate that various modifications, improvements, combinations, and the like can be made.

20‧‧‧ platform

21‧‧‧Mobile agencies

22‧‧‧stage

23, 23R‧‧‧ nozzle unit

24‧‧‧Nozzle head

24a‧‧‧ nozzle hole

24I, 24J‧‧‧ nozzle column

25, 25a, 25b‧‧‧ ultraviolet light source

26‧‧‧Nozzle fixture

27‧‧‧Rotating mechanism

28‧‧‧Optical system

29‧‧‧Nozzle unit support mechanism

30‧‧‧ Camera

31‧‧‧ pillar

32‧‧‧ beams

40‧‧‧Control device

41‧‧‧ Input device

42‧‧‧output device

50‧‧‧Substrate

50a‧‧‧Micro-area

50b‧‧‧ physical area

51‧‧‧Insulated area

52‧‧‧Terminal area

55‧‧‧film pattern

55a‧‧‧ droplets

56‧‧‧Unit scanning area

60, 61‧‧‧ edge pattern

62‧‧‧Face pattern

63‧‧‧ dividing line of unit scanning area

64‧‧‧Face pattern

65‧‧‧Edge pattern

66‧‧‧Face pattern

70‧‧‧Ultra-region ultraviolet light source

80‧‧‧ core substrate

81‧‧‧1st wiring pattern

82‧‧‧Insulation film

83‧‧‧through hole

84‧‧‧2nd wiring pattern

85‧‧‧Insulation film

Fig. 1 is a schematic view of a film forming apparatus based on Example 1.

2A is a perspective view of a nozzle unit used in the film forming apparatus of Embodiment 1, and FIG. 2B is a bottom view of the nozzle unit.

3 is a plan view of a substrate having a film pattern formed by the film formation method of Example 1, and a nozzle unit.

4-1: FIG. 4A is a plan view of a substrate and a nozzle unit before and after the first scanning based on the film forming method of Embodiment 1, and FIG. 4B is a cross-sectional view taken along a dashed line 4B-4B of FIG. 4A, and FIG. 4C is a cross-sectional view of FIG. A plan view of the substrate and the nozzle unit before and after the second scanning based on the thin film forming method of the first embodiment, and FIG. 4D is a cross-sectional view taken along the dashed line 4D-4D of FIG. 4C.

4-2: FIG. 4E is a plan view of the substrate and the nozzle unit before and after the third scanning based on the film forming method of Embodiment 1, and FIG. 4F is a cross-sectional view taken along a dashed line 4F-4F of FIG. 4E, and FIG. 4G is based on Thin of Example 1 A plan view of the substrate and the nozzle unit before and after the fourth scanning of the film forming method, and FIG. 4H is a cross-sectional view taken along a dashed line 4H-4H of FIG. 4G.

4-3: FIG. 4I is a plan view of the substrate and the nozzle unit before and after the 5th scan of the film forming method of Embodiment 1, and FIG. 4J is a cross-sectional view taken along the dashed line 4J-4J of FIG. 4I, and FIG. 4K is based on A plan view of the substrate and the nozzle unit before and after the sixth scanning of the film forming method of Example 1, and FIG. 4L is a cross-sectional view taken along a dashed line 4L-4L of FIG. 4K.

5A, 5B, and 5C are cross-sectional views taken along a dashed line 5A-5A of Fig. 4A, a cross-sectional view taken along a dashed line 5B-5B of Fig. 4E, and a cross-sectional view taken along a dotted line 5C-5C of Fig. 4I, respectively.

6A and 6B are cross-sectional views of a film pattern formed by a method based on Comparative Example and Example 1, respectively.

7-1: FIG. 7A is a plan view of a substrate and a nozzle unit before and after the second scanning based on the film forming method of Example 2, and FIG. 7B is a substrate before and after the third scanning based on the film forming method of Example 2. Plan view of the nozzle unit.

7A is a plan view of the substrate and the nozzle unit before and after the fourth scanning based on the film forming method of the second embodiment, and FIG. 7D is a substrate before and after the fifth scanning based on the film forming method of the second embodiment; Plan view of the nozzle unit.

Fig. 7-3: Fig. 7E is a plan view of the substrate and the nozzle unit before and after the sixth scanning based on the film forming method of the second embodiment.

8-1: FIG. 8A is a plan view of a substrate and a nozzle unit before and after the first scanning based on the thin film forming method of Example 3, and FIG. 8B is based on A plan view of the substrate and the nozzle unit before and after the second scanning of the film forming method of Example 3.

8-2 is a plan view of the substrate and the nozzle unit before and after the third scanning based on the film forming method of Example 3, and FIG. 8D is a substrate before and after the fourth scanning based on the film forming method of Example 3. Plan view of the nozzle unit.

Figure 9 is a plan view of a nozzle unit based on the thin film forming apparatus of Embodiment 4.

Fig. 10-1 is a plan view showing a substrate and a nozzle unit before and after the first scanning based on the film forming method of the fourth embodiment.

Fig. 10-2: Fig. 10B is a plan view of the substrate and the nozzle unit before and after the second scanning based on the film forming method of the fourth embodiment.

Fig. 10-3: Fig. 10C is a plan view of the substrate and the nozzle unit before and after the third scanning based on the film forming method of the fourth embodiment.

Figure 11 is a bottom plan view of the nozzle unit used in the evaluation test of Example 5.

Figure 12 is a partial side view of a film forming apparatus based on Example 5.

Fig. 13A is a plan view of a film pattern and a nozzle unit formed on a substrate, and Figs. 13B and 13C are cross-sectional views taken along a dashed line 13-13 of Fig. 13A.

Figure 14 is a bottom view of the nozzle unit based on Embodiment 5.

15A and 15B are side views of a nozzle unit and a substrate when a thin film pattern is formed by the method of the fifth embodiment.

Fig. 16A is a plan view showing a film pattern and a nozzle unit formed on a substrate by the method of Example 5, and Fig. 16B is a cross-sectional view taken along a dashed line 16B-16B of Fig. 16A.

17A and 17B are plan views of a nozzle unit and a substrate based on a modification of the fifth embodiment.

18A and 18B are side views of a nozzle unit and a substrate when a thin film pattern is formed by the method of the sixth embodiment, and FIG. 18C is a side of the nozzle unit and the substrate when the thin film pattern is formed by the method according to the modification of the sixth embodiment. view.

Fig. 19A is a plan view showing a film pattern and a nozzle unit formed on a substrate by the method of Example 6, and Fig. 19B is a cross-sectional view taken along a dotted line 19B-19B of Fig. 19A.

Fig. 20 is a plan view showing a film pattern and a nozzle unit formed by the method according to the modification of the embodiment 6.

21A to 21D are cross-sectional views showing a middle stage of manufacture of a semiconductor device fabricated by the method of the seventh embodiment.

22A and 22B are bottom views showing the arrangement of the nozzle heads of the film forming apparatus according to the eighth embodiment and its modifications, respectively.

Figure 23 is a bottom view showing the arrangement of a nozzle head of the film forming apparatus of Example 9.

24A, 24B, 24C, and 24D show the edge patterns after the first, second, third, and fourth scans are completed when the edge pattern is formed by the thin film forming apparatus of the ninth embodiment. , a plan view of a pixel that has a thin film material.

20‧‧‧ platform

21‧‧‧Mobile agencies

22‧‧‧stage

23‧‧‧Nozzle unit

29‧‧‧Nozzle unit support mechanism

30‧‧‧ Camera

31‧‧‧ pillar

32‧‧‧ beams

40‧‧‧Control device

41‧‧‧ Input device

42‧‧‧output device

50‧‧‧Substrate

Claims (26)

A method for forming a thin film, comprising: blacing an edge of a region where a thin film pattern is formed in a surface of a substrate by repeated deposition of a thin film material, and curing of the stretched film material, in a region where the thin film pattern is formed a step of forming an edge pattern of a film material; a step of causing droplets of the film material to be separated from an inner region of the edge by the edge pattern; and a step of curing the film material that is impinging on the inner region In the step of forming the edge pattern, the nozzle unit formed with the plurality of nozzle holes for discharging the film material is moved relative to the other of the stages holding the substrate, and the film material is made from the foregoing The nozzle hole is ejected, whereby the edge pattern is formed, and the droplet of the film material is bounced in the inner region of the edge separated by the edge pattern, and the substrate is held in the stage And forming a nozzle unit having a plurality of nozzle holes for discharging the film material, and holding the substrate Wherein while one of the mobile station relative to the other, by forming the nozzle unit used in the construction of the edges of the pattern, so that the thin film materials in the inner region of impact, by this, a thin film is formed on the inner region. The film forming method according to claim 1, wherein in the step of forming the edge pattern, the film material is discharged from the nozzle unit toward the substrate, and the film material that is bounced on the substrate is cured, and the foregoing The stage moves. The film forming method of claim 2, wherein the film material is a photocurable material which is cured by light irradiation, in the step of forming the edge pattern, by using a light source for emitting light for curing the film material, One of the substrates moves relative to the other, and a step of curing the film material on the substrate and further applying the film material to the cured film material and curing the film is performed, thereby forming the edge pattern . The method of forming a thin film according to claim 3, wherein in the step of forming the edge pattern, during the scanning period, light is irradiated from the light source to a film material that is impinging on the substrate, so that the film material is bounced in the inner region. In the step, after the scanning is not performed during the scanning, the scanning of the step of the film material is performed on the inner region, and then the light source and the substrate are moved relative to each other, and the inner region is bounced toward the inner region. The film material illuminates the light. The method of forming a film according to claim 3, wherein in the step of forming the edge pattern, the other film of the film material is caused to be elastically adhered to the edge of the region where the film pattern is formed, and the cured film material portion is obtained. The overlapping patterns are bounced and cured such that the edge pattern is higher than the height of the film material formed by curing one droplet of the film material. The method of forming a film according to claim 3, wherein in the step of forming the edge pattern, the surface layer portion of the film material that is springed on the substrate is cured, and the interior is in an uncured state. Into the aforementioned edge pattern. The film forming method according to claim 3, wherein a distribution density of the impact point when the film material is caused to bounce in the inner region is lower than a distribution density of the impact point when the film material is bounced when the edge pattern is formed. The film forming method of claim 7, wherein the droplet volume when the film material is bounced in the inner region is larger than the droplet volume when the edge pattern is formed. The method of forming a film according to claim 3, wherein after the film material is bounced in the inner region, the film material is cured until the film material is bounced on the edge of the region where the film pattern is formed, until the film material is cured. The time is long. The method for forming a thin film according to claim 3, wherein, when the surface of the substrate is divided into at least two regions by a boundary line, the boundary line means an imaginary boundary line intersecting an edge of a region where the thin film pattern is formed. a step of forming the edge pattern, a step of causing droplets of the film material to be bounced on the inner region, and a step of curing the film material that is played on the inner region to perform a process on one of the sides of the virtual boundary line Thereafter, the region on the other side of the aforementioned virtual boundary line is executed. The method of forming a film according to claim 3, wherein the film material that is bounced in the inner region is diffused in the in-plane direction of the substrate, and the film material that is bounced on the plurality of impact points is continuous, and becomes impossible. After distinguishing the adjacent impact points, the film material that is springed on the inner region is cured. The method of forming a film according to claim 3, wherein the film material is a photocurable material, and the droplets of the film material are caused to impinge on the inner region, so that droplets of the film material are imploded in the inner region. After one of the boundary lines, the droplet of the film material is bounced on the other side, and in the step of solidifying the film material that is played in the inner region, the region irradiated with the light is moved along the imaginary boundary line. At the same time, the film material on both sides of the aforementioned imaginary dividing line is cured. The film forming method according to claim 3, wherein the first wiring pattern is formed on the surface of the substrate, the step of forming the edge pattern, the step of causing droplets of the film material to be played on the inner region, and the beating In the step of curing the thin film material in the inner region, the formed thin film pattern covers the substrate and the first wiring pattern, and includes a plurality of through holes exposing a portion of the first wiring pattern to be bounced After the step of curing the thin film material in the inner region, a step of forming a second wiring pattern connected to the first wiring pattern through the through hole is formed on the thin film pattern. A film forming method comprising: (a) attaching a photocurable film material to a first region in which a surface region is divided into an edge including a film pattern to be formed, and the first region of a substrate forming a second region of the solid film The area where the film should be formed in the area Step (b) after the step a, irradiating the film material adhering to the first region of the substrate with light to cure the film material, and (c) adhering the film material to the second region And (d) after the step c, irradiating the film material adhering to the substrate of the second region with light to adhere the film material to the second region, and then to the step d The film formation method is characterized in that the time until the light is applied to the film material is longer than the time period after the light is applied to the film material after the first region is adhered to the step b, and the film forming method is characterized in that the step a is formed. a nozzle unit that discharges a plurality of nozzle holes of the film material moves relative to one of the stages holding the substrate, and discharges the film material from the nozzle hole, and in the step c, The nozzle unit used in the step a moves the film material from the front while moving relative to the other of the stages holding the substrate Ejection nozzle holes. A film forming apparatus comprising: a stage for holding a substrate; and a nozzle unit facing the substrate held by the stage, and provided with a surface of the substrate and discharging a droplet of the photocurable film material a plurality of nozzle holes, and a light source that irradiates the film material adhering to the substrate with light for curing; and a moving mechanism that faces at least one of the nozzle unit and the stage toward the surface of the substrate And a control device for storing image data of the film pattern formed on the substrate, wherein the control device controls the moving mechanism, the nozzle unit and the light source according to the image data, so that the nozzle unit and the foregoing While one of the stages moves relative to the other, the droplets of the film material are caused to impinge on the edge of the film pattern, and after the light is irradiated from the light source to the film material that is played on the edge to form an edge pattern, While moving the one of the nozzle unit and the stage opposite to the other, the droplets of the film material are caused to play inside the region where the thin film pattern is formed, and the light is irradiated from the light source to form the aforementioned The aforementioned film material inside the region of the film. The film forming apparatus according to claim 15, wherein the control device moves the droplet of the film material from the nozzle hole while moving the one of the nozzle unit and the stage toward the first direction The light source emits light from a position where the film material is ejected from the nozzle hole and is displaced from the first direction. The thin film forming apparatus of claim 15 or 16, wherein the intensity of light irradiated to the film material by the light source is At least the surface layer portion of the film material of the substrate is cured. The film forming apparatus according to claim 15 or 16, wherein the control device causes the film material to be ejected from the nozzle hole while moving the one of the nozzle unit and the substrate toward the other direction In one scan, the edge pattern is formed by performing a plurality of scans on one area of the substrate. The film forming apparatus of claim 18, wherein the control means realizes the plurality of scans by scanning back and forth. The thin film forming apparatus according to claim 15 or 16, wherein the control device has a distribution density of a bounce point when the film material is bounced in the inner region, and is lower than a distribution of the bounce point when the film material is bounced when the edge pattern is formed. The density is used to control the aforementioned nozzle unit. The film forming apparatus of claim 20, wherein the control means controls the nozzle unit in such a manner that a droplet volume when the film material is bounced in the inner region is larger than a droplet volume when the edge pattern is formed. The film forming apparatus of claim 16, wherein the nozzle unit includes a plurality of nozzle heads arranged in the first direction, and each of the nozzle heads is provided with a plurality of the nozzle holes, and the nozzles are the nozzle nozzles as a whole The holes are arranged at equal intervals in a direction perpendicular to the first direction, and the light sources are disposed between the nozzle heads and outside the nozzle heads disposed on the outermost side. The film forming apparatus of claim 15, wherein when the XY vertical coordinate system is defined on a surface of the substrate of the stage, the nozzle unit includes a nozzle row formed by a plurality of nozzle holes arranged in the X direction, the light source The edge curing light source and the solid region curing light source are disposed, and the edge curing light source is disposed on a side of the nozzle row, and irradiates light to a region where droplets are discharged from the nozzle row in the X direction, and the solid region is cured. The light source is irradiated with light in the X direction in a region shifted from the region irradiated by the edge curing light source to the negative side in the X direction. A film forming apparatus comprising: a stage for holding a substrate; and a nozzle unit provided with a liquid material that is photo-curable and insulating toward a substrate held by the stage, and that discharges the liquid material a plurality of nozzle holes attached to the substrate; and a moving mechanism for moving one of the stage and the nozzle unit to move in a Y direction parallel to a surface of the substrate; the first light source is from the plurality of nozzles The hole is arranged away from the Y direction, and the liquid material is solidified by irradiating light to the liquid material adhered to the substrate; the second light source is further away from the first light source in the Y direction from the plurality of nozzle holes Arranged by attaching a liquid material to the aforementioned substrate Irradiating the light to cure the liquid material; and controlling the device to define image data of the film pattern formed on the surface of the substrate, and controlling the moving mechanism, the nozzle unit, and the first according to the image data And the second light source, wherein the control device controls the moving mechanism, the nozzle unit, and the first and second light sources such that the movement unit moves one of the nozzle unit and the stage relative to the other while Applying the liquid material from the nozzle unit to an edge of the thin film pattern of the substrate, and the first light source solidifies the liquid material adhered to the first region including the edge of the thin film pattern by the aforementioned The moving mechanism moves the liquid material as the solid from the nozzle unit to the inner region of the edge of the thin film pattern on which the substrate is formed, while moving the one of the nozzle unit and the other of the stages toward the other. The second light source cures the liquid material adhered to the second region of the solid film pattern. The thin film forming apparatus according to claim 24, wherein the control means memorizes the information on the thin film pattern as the information of the first region and the second region. The thin film forming apparatus according to claim 24 or 25, wherein the first and second light source systems are formed by a plurality of light emitting diodes arranged along an arrangement of the plurality of nozzles, and the plurality of light emitting diodes are each independently Switch control is performed on the ground.