TWI593513B - 用於化學機械研磨中研磨速率校正的反饋的方法 - Google Patents
用於化學機械研磨中研磨速率校正的反饋的方法 Download PDFInfo
- Publication number
- TWI593513B TWI593513B TW100116191A TW100116191A TWI593513B TW I593513 B TWI593513 B TW I593513B TW 100116191 A TW100116191 A TW 100116191A TW 100116191 A TW100116191 A TW 100116191A TW I593513 B TWI593513 B TW I593513B
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- Taiwan
- Prior art keywords
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- indicator
- grinding
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Links
- 238000005498 polishing Methods 0.000 title claims description 131
- 238000000034 method Methods 0.000 title claims description 66
- 238000012937 correction Methods 0.000 title claims description 5
- 239000000126 substance Substances 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 288
- 238000001228 spectrum Methods 0.000 claims description 141
- 238000000227 grinding Methods 0.000 claims description 97
- 238000012886 linear function Methods 0.000 claims description 55
- 238000012544 monitoring process Methods 0.000 claims description 32
- 230000003595 spectral effect Effects 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 description 36
- 239000010410 layer Substances 0.000 description 30
- 238000004364 calculation method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 238000007517 polishing process Methods 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000004590 computer program Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000012625 in-situ measurement Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 101100119135 Mus musculus Esrrb gene Proteins 0.000 description 2
- 101150107278 POLD1 gene Proteins 0.000 description 2
- 101150043219 POLD2 gene Proteins 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/781,644 US8190285B2 (en) | 2010-05-17 | 2010-05-17 | Feedback for polishing rate correction in chemical mechanical polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201210742A TW201210742A (en) | 2012-03-16 |
| TWI593513B true TWI593513B (zh) | 2017-08-01 |
Family
ID=44912179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116191A TWI593513B (zh) | 2010-05-17 | 2011-05-09 | 用於化學機械研磨中研磨速率校正的反饋的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8190285B2 (enExample) |
| JP (1) | JP6009436B2 (enExample) |
| KR (1) | KR101769886B1 (enExample) |
| TW (1) | TWI593513B (enExample) |
| WO (1) | WO2011146208A2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5675617B2 (ja) * | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加工時における基板の分光モニタリングを使用した研磨速度の調整 |
| US8579675B2 (en) * | 2008-11-26 | 2013-11-12 | Applied Materials, Inc. | Methods of using optical metrology for feed back and feed forward process control |
| US8190285B2 (en) * | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
| US8666665B2 (en) * | 2010-06-07 | 2014-03-04 | Applied Materials, Inc. | Automatic initiation of reference spectra library generation for optical monitoring |
| US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
| US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
| US10643853B2 (en) * | 2012-02-10 | 2020-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer thinning apparatus having feedback control and method of using |
| WO2013130366A1 (en) * | 2012-02-27 | 2013-09-06 | Applied Materials, Inc. | Feedback control using detection of clearance and adjustment for uniform topography |
| US8563335B1 (en) * | 2012-04-23 | 2013-10-22 | Applied Materials, Inc. | Method of controlling polishing using in-situ optical monitoring and fourier transform |
| US9011202B2 (en) * | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
| US9289875B2 (en) * | 2012-04-25 | 2016-03-22 | Applied Materials, Inc. | Feed forward and feed-back techniques for in-situ process control |
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| US9296084B2 (en) * | 2012-07-19 | 2016-03-29 | Applied Materials, Inc. | Polishing control using weighting with default sequence |
| US20140030956A1 (en) * | 2012-07-25 | 2014-01-30 | Jimin Zhang | Control of polishing of multiple substrates on the same platen in chemical mechanical polishing |
| KR20150085000A (ko) * | 2012-11-16 | 2015-07-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 캐리어 헤드용 센서들에 의한 기록 측정들 |
| US20140242877A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials, Inc. | Spectrographic metrology with multiple measurements |
| WO2014149330A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Dynamic residue clearing control with in-situ profile control (ispc) |
| US9490186B2 (en) | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
| US9375824B2 (en) * | 2013-11-27 | 2016-06-28 | Applied Materials, Inc. | Adjustment of polishing rates during substrate polishing with predictive filters |
| US9997420B2 (en) | 2013-12-27 | 2018-06-12 | Taiwan Semiconductor Manufacturing Company Limited | Method and/or system for chemical mechanical planarization (CMP) |
| US10464184B2 (en) * | 2014-05-07 | 2019-11-05 | Applied Materials, Inc. | Modifying substrate thickness profiles |
| US9610672B2 (en) * | 2014-06-27 | 2017-04-04 | Applied Materials, Inc. | Configurable pressure design for multizone chemical mechanical planarization polishing head |
| KR101679131B1 (ko) * | 2014-12-29 | 2016-11-23 | 주식회사 엘지실트론 | 웨이퍼 연마장치 및 그 연마방법 |
| JP6575463B2 (ja) * | 2016-08-24 | 2019-09-18 | 信越半導体株式会社 | ウェーハの研磨方法 |
| US10562148B2 (en) * | 2016-10-10 | 2020-02-18 | Applied Materials, Inc. | Real time profile control for chemical mechanical polishing |
| JP6847811B2 (ja) * | 2017-10-24 | 2021-03-24 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| TWI825075B (zh) | 2018-04-03 | 2023-12-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
| US12447578B2 (en) | 2018-09-26 | 2025-10-21 | Applied Materials, Inc. | Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring |
| US11989492B2 (en) * | 2018-12-26 | 2024-05-21 | Applied Materials, Inc. | Preston matrix generator |
| TWI810069B (zh) | 2020-06-08 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品 |
| CN115038549B (zh) | 2020-06-24 | 2024-03-12 | 应用材料公司 | 使用研磨垫磨损补偿的基板层厚度确定 |
| JP7436684B2 (ja) * | 2020-06-26 | 2024-02-22 | アプライド マテリアルズ インコーポレイテッド | 変形可能な基板チャック |
| JP7389718B2 (ja) * | 2020-06-29 | 2023-11-30 | 株式会社荏原製作所 | 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体 |
| JP7637482B2 (ja) * | 2020-08-11 | 2025-02-28 | 株式会社荏原製作所 | 基板処理装置及び研磨部材のドレッシング制御方法 |
| US12311494B2 (en) * | 2021-03-03 | 2025-05-27 | Applied Materials, Inc. | Pressure signals during motor torque monitoring to provide spatial resolution |
| US11969854B2 (en) | 2021-03-05 | 2024-04-30 | Applied Materials, Inc. | Control of processing parameters during substrate polishing using expected future parameter changes |
| JP7547275B2 (ja) * | 2021-03-31 | 2024-09-09 | 株式会社荏原製作所 | ワークピースの膜厚を推定するモデルを作成する方法、そのようなモデルを用いてワークピースの研磨中に膜厚を推定する方法、およびコンピュータにこれらの方法を実行させるためのプログラム |
| CN113246012B (zh) * | 2021-05-14 | 2022-08-09 | 上海华力集成电路制造有限公司 | 化学机械研磨的控制方法、设备和存储介质 |
| JP2024040885A (ja) * | 2022-09-13 | 2024-03-26 | 株式会社荏原製作所 | 研磨装置におけるグラフの表示方法およびコンピュータプログラム |
| CN115946036B (zh) * | 2022-12-15 | 2025-08-05 | 北京晶亦精微科技股份有限公司 | 一种研磨压力修整方法、装置、计算机设备及介质 |
| CN117140200A (zh) * | 2023-09-19 | 2023-12-01 | 安徽久泰电气有限公司 | 一种打磨机器人全自动打磨抛光控制方法及系统 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200607604A (en) * | 2004-06-21 | 2006-03-01 | Ebara Corp | Polishing apparatus and polishing method |
| TW200717637A (en) * | 2005-08-22 | 2007-05-01 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW200849416A (en) * | 2007-02-23 | 2008-12-16 | Applied Materials Inc | Using spectra to determine polishing endpoints |
| US20100120331A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6024630A (en) * | 1995-06-09 | 2000-02-15 | Applied Materials, Inc. | Fluid-pressure regulated wafer polishing head |
| US5681215A (en) * | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
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| JP3932836B2 (ja) | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
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| JP4464642B2 (ja) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
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| KR101361875B1 (ko) * | 2005-05-26 | 2014-02-12 | 가부시키가이샤 니콘 | Cmp 연마 장치에서의 연마 종료점 검출 방법, cmp연마 장치, 및 반도체 디바이스의 제조 방법 |
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| JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
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| JP5675617B2 (ja) * | 2008-09-04 | 2015-02-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 加工時における基板の分光モニタリングを使用した研磨速度の調整 |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| WO2010062497A2 (en) * | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US20100114532A1 (en) * | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
| US8295967B2 (en) | 2008-11-07 | 2012-10-23 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
| US8579675B2 (en) * | 2008-11-26 | 2013-11-12 | Applied Materials, Inc. | Methods of using optical metrology for feed back and feed forward process control |
| US8190285B2 (en) * | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
-
2010
- 2010-05-17 US US12/781,644 patent/US8190285B2/en active Active
-
2011
- 2011-04-26 WO PCT/US2011/033998 patent/WO2011146208A2/en not_active Ceased
- 2011-04-26 JP JP2013511174A patent/JP6009436B2/ja active Active
- 2011-04-26 KR KR1020127032822A patent/KR101769886B1/ko active Active
- 2011-05-09 TW TW100116191A patent/TWI593513B/zh active
-
2012
- 2012-05-24 US US13/480,434 patent/US8467896B2/en active Active
-
2013
- 2013-06-17 US US13/919,144 patent/US8755927B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200607604A (en) * | 2004-06-21 | 2006-03-01 | Ebara Corp | Polishing apparatus and polishing method |
| TW200717637A (en) * | 2005-08-22 | 2007-05-01 | Applied Materials Inc | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| TW200849416A (en) * | 2007-02-23 | 2008-12-16 | Applied Materials Inc | Using spectra to determine polishing endpoints |
| US20100120331A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6009436B2 (ja) | 2016-10-19 |
| JP2013529386A (ja) | 2013-07-18 |
| WO2011146208A2 (en) | 2011-11-24 |
| KR20130079441A (ko) | 2013-07-10 |
| TW201210742A (en) | 2012-03-16 |
| US8755927B2 (en) | 2014-06-17 |
| US20110281501A1 (en) | 2011-11-17 |
| WO2011146208A3 (en) | 2012-03-01 |
| US8467896B2 (en) | 2013-06-18 |
| KR101769886B1 (ko) | 2017-08-21 |
| US20120231701A1 (en) | 2012-09-13 |
| US8190285B2 (en) | 2012-05-29 |
| US20130273812A1 (en) | 2013-10-17 |
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