JP6009436B2 - 化学機械研磨における研磨速度補正のためのフィードバック - Google Patents

化学機械研磨における研磨速度補正のためのフィードバック Download PDF

Info

Publication number
JP6009436B2
JP6009436B2 JP2013511174A JP2013511174A JP6009436B2 JP 6009436 B2 JP6009436 B2 JP 6009436B2 JP 2013511174 A JP2013511174 A JP 2013511174A JP 2013511174 A JP2013511174 A JP 2013511174A JP 6009436 B2 JP6009436 B2 JP 6009436B2
Authority
JP
Japan
Prior art keywords
polishing
time
substrate
section
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013511174A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013529386A (ja
JP2013529386A5 (enExample
Inventor
チュン チエン，
チュン チエン，
チャールズ シー． ギャレットソン，
チャールズ シー． ギャレットソン，
シヴァクマール ダンダパーニ，
シヴァクマール ダンダパーニ，
ジェフリー ドリュー デーヴィッド，
ジェフリー ドリュー デーヴィッド，
ハリー キュー． リー，
ハリー キュー． リー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013529386A publication Critical patent/JP2013529386A/ja
Publication of JP2013529386A5 publication Critical patent/JP2013529386A5/ja
Application granted granted Critical
Publication of JP6009436B2 publication Critical patent/JP6009436B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2013511174A 2010-05-17 2011-04-26 化学機械研磨における研磨速度補正のためのフィードバック Active JP6009436B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/781,644 US8190285B2 (en) 2010-05-17 2010-05-17 Feedback for polishing rate correction in chemical mechanical polishing
US12/781,644 2010-05-17
PCT/US2011/033998 WO2011146208A2 (en) 2010-05-17 2011-04-26 Feedback for polishing rate correction in chemical mechanical polishing

Publications (3)

Publication Number Publication Date
JP2013529386A JP2013529386A (ja) 2013-07-18
JP2013529386A5 JP2013529386A5 (enExample) 2014-06-19
JP6009436B2 true JP6009436B2 (ja) 2016-10-19

Family

ID=44912179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013511174A Active JP6009436B2 (ja) 2010-05-17 2011-04-26 化学機械研磨における研磨速度補正のためのフィードバック

Country Status (5)

Country Link
US (3) US8190285B2 (enExample)
JP (1) JP6009436B2 (enExample)
KR (1) KR101769886B1 (enExample)
TW (1) TWI593513B (enExample)
WO (1) WO2011146208A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5675617B2 (ja) * 2008-09-04 2015-02-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 加工時における基板の分光モニタリングを使用した研磨速度の調整
US8579675B2 (en) * 2008-11-26 2013-11-12 Applied Materials, Inc. Methods of using optical metrology for feed back and feed forward process control
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8666665B2 (en) * 2010-06-07 2014-03-04 Applied Materials, Inc. Automatic initiation of reference spectra library generation for optical monitoring
US20120034844A1 (en) * 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
US8694144B2 (en) 2010-08-30 2014-04-08 Applied Materials, Inc. Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing
US10643853B2 (en) * 2012-02-10 2020-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer thinning apparatus having feedback control and method of using
WO2013130366A1 (en) * 2012-02-27 2013-09-06 Applied Materials, Inc. Feedback control using detection of clearance and adjustment for uniform topography
US8563335B1 (en) * 2012-04-23 2013-10-22 Applied Materials, Inc. Method of controlling polishing using in-situ optical monitoring and fourier transform
US9011202B2 (en) * 2012-04-25 2015-04-21 Applied Materials, Inc. Fitting of optical model with diffraction effects to measured spectrum
US9289875B2 (en) * 2012-04-25 2016-03-22 Applied Materials, Inc. Feed forward and feed-back techniques for in-situ process control
US9248544B2 (en) * 2012-07-18 2016-02-02 Applied Materials, Inc. Endpoint detection during polishing using integrated differential intensity
US9296084B2 (en) * 2012-07-19 2016-03-29 Applied Materials, Inc. Polishing control using weighting with default sequence
US20140030956A1 (en) * 2012-07-25 2014-01-30 Jimin Zhang Control of polishing of multiple substrates on the same platen in chemical mechanical polishing
KR20150085000A (ko) * 2012-11-16 2015-07-22 어플라이드 머티어리얼스, 인코포레이티드 캐리어 헤드용 센서들에 의한 기록 측정들
US20140242877A1 (en) * 2013-02-26 2014-08-28 Applied Materials, Inc. Spectrographic metrology with multiple measurements
WO2014149330A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Dynamic residue clearing control with in-situ profile control (ispc)
US9490186B2 (en) 2013-11-27 2016-11-08 Applied Materials, Inc. Limiting adjustment of polishing rates during substrate polishing
US9375824B2 (en) * 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
US9997420B2 (en) 2013-12-27 2018-06-12 Taiwan Semiconductor Manufacturing Company Limited Method and/or system for chemical mechanical planarization (CMP)
US10464184B2 (en) * 2014-05-07 2019-11-05 Applied Materials, Inc. Modifying substrate thickness profiles
US9610672B2 (en) * 2014-06-27 2017-04-04 Applied Materials, Inc. Configurable pressure design for multizone chemical mechanical planarization polishing head
KR101679131B1 (ko) * 2014-12-29 2016-11-23 주식회사 엘지실트론 웨이퍼 연마장치 및 그 연마방법
JP6575463B2 (ja) * 2016-08-24 2019-09-18 信越半導体株式会社 ウェーハの研磨方法
US10562148B2 (en) * 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
JP6847811B2 (ja) * 2017-10-24 2021-03-24 株式会社荏原製作所 研磨方法および研磨装置
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
US12447578B2 (en) 2018-09-26 2025-10-21 Applied Materials, Inc. Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
US11989492B2 (en) * 2018-12-26 2024-05-21 Applied Materials, Inc. Preston matrix generator
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
JP7436684B2 (ja) * 2020-06-26 2024-02-22 アプライド マテリアルズ インコーポレイテッド 変形可能な基板チャック
JP7389718B2 (ja) * 2020-06-29 2023-11-30 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
JP7637482B2 (ja) * 2020-08-11 2025-02-28 株式会社荏原製作所 基板処理装置及び研磨部材のドレッシング制御方法
US12311494B2 (en) * 2021-03-03 2025-05-27 Applied Materials, Inc. Pressure signals during motor torque monitoring to provide spatial resolution
US11969854B2 (en) 2021-03-05 2024-04-30 Applied Materials, Inc. Control of processing parameters during substrate polishing using expected future parameter changes
JP7547275B2 (ja) * 2021-03-31 2024-09-09 株式会社荏原製作所 ワークピースの膜厚を推定するモデルを作成する方法、そのようなモデルを用いてワークピースの研磨中に膜厚を推定する方法、およびコンピュータにこれらの方法を実行させるためのプログラム
CN113246012B (zh) * 2021-05-14 2022-08-09 上海华力集成电路制造有限公司 化学机械研磨的控制方法、设备和存储介质
JP2024040885A (ja) * 2022-09-13 2024-03-26 株式会社荏原製作所 研磨装置におけるグラフの表示方法およびコンピュータプログラム
CN115946036B (zh) * 2022-12-15 2025-08-05 北京晶亦精微科技股份有限公司 一种研磨压力修整方法、装置、计算机设备及介质
CN117140200A (zh) * 2023-09-19 2023-12-01 安徽久泰电气有限公司 一种打磨机器人全自动打磨抛光控制方法及系统

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6024630A (en) * 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US5681215A (en) * 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
JP3932836B2 (ja) 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6945845B2 (en) * 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
US6991516B1 (en) * 2003-08-18 2006-01-31 Applied Materials Inc. Chemical mechanical polishing with multi-stage monitoring of metal clearing
US7074109B1 (en) * 2003-08-18 2006-07-11 Applied Materials Chemical mechanical polishing control system and method
JP4464642B2 (ja) * 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
WO2005123335A1 (en) * 2004-06-21 2005-12-29 Ebara Corporation Polishing apparatus and polishing method
JP4689367B2 (ja) * 2004-07-09 2011-05-25 株式会社荏原製作所 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置
KR101361875B1 (ko) * 2005-05-26 2014-02-12 가부시키가이샤 니콘 Ｃｍｐ 연마 장치에서의 연마 종료점 검출 방법, ｃｍｐ연마 장치, 및 반도체 디바이스의 제조 방법
KR101521414B1 (ko) * 2005-08-22 2015-05-19 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US8260446B2 (en) * 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
JP5534672B2 (ja) * 2005-08-22 2014-07-02 アプライド マテリアルズ インコーポレイテッド 化学機械的研磨のスペクトルに基づく監視のための装置および方法
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
KR101678082B1 (ko) * 2007-02-23 2016-11-21 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
JP5675617B2 (ja) * 2008-09-04 2015-02-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 加工時における基板の分光モニタリングを使用した研磨速度の調整
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
WO2010062497A2 (en) * 2008-10-27 2010-06-03 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US20100114532A1 (en) * 2008-11-03 2010-05-06 Applied Materials, Inc. Weighted spectrographic monitoring of a substrate during processing
US20100120331A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
US8295967B2 (en) 2008-11-07 2012-10-23 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
US8579675B2 (en) * 2008-11-26 2013-11-12 Applied Materials, Inc. Methods of using optical metrology for feed back and feed forward process control
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing

Also Published As

Publication number Publication date
TWI593513B (zh) 2017-08-01
JP2013529386A (ja) 2013-07-18
WO2011146208A2 (en) 2011-11-24
KR20130079441A (ko) 2013-07-10
TW201210742A (en) 2012-03-16
US8755927B2 (en) 2014-06-17
US20110281501A1 (en) 2011-11-17
WO2011146208A3 (en) 2012-03-01
US8467896B2 (en) 2013-06-18
KR101769886B1 (ko) 2017-08-21
US20120231701A1 (en) 2012-09-13
US8190285B2 (en) 2012-05-29
US20130273812A1 (en) 2013-10-17

Similar Documents

Publication Publication Date Title
JP6009436B2 (ja) 化学機械研磨における研磨速度補正のためのフィードバック
US8694144B2 (en) Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing
US9579767B2 (en) Automatic generation of reference spectra for optical monitoring of substrates
KR101944325B1 (ko) 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출
US8666665B2 (en) Automatic initiation of reference spectra library generation for optical monitoring
US8616935B2 (en) Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
US8295967B2 (en) Endpoint control of multiple-wafer chemical mechanical polishing
US20100120331A1 (en) Endpoint control of multiple-wafer chemical mechanical polishing
US20110282477A1 (en) Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing
KR20150132524A (ko) 인-시튜 프로파일 제어(ｉｓｐｃ)를 이용한 동적 잔류물 클리어링 제어
KR20110093866A (ko) 다중-웨이퍼 화학 기계적 연마의 종료점 제어
KR101762837B1 (ko) 광 모니터링을 위한 기준 스펙트럼들의 자동 발생
KR101587008B1 (ko) 기판상의 다중 구역들의 모니터링을 위한 선택 기준 라이브러리들

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140425

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140425

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150702

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150707

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151001

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160419

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160427

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160816

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160914

R150 Certificate of patent or registration of utility model

Ref document number: 6009436

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250