TWI592985B - Wet process equipment having vapor circulating device - Google Patents
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本發明是關於一種濕製程設備,特別是關於一種具有氣體循環裝置之濕製程設備。 This invention relates to a wet process apparatus, and more particularly to a wet process apparatus having a gas circulation device.
隨著科技的發展,濕式製程的技術已趨於成熟使得濕製程設備在各種製造業已被廣泛使用。然而,在傳統的濕製程設備中依然存在諸多問題有待改善,例如:由於部分機構設計不良的關係導致人員維修困難、設備的耗液量大導致生產成本高昂、設備容易發生漏液的問題導致零件受損...等等。再者,在濕式製程中由於是將基板放置在密閉的製程腔體中進行多道化學性的製程,因此製程腔體內部之製程環境是影響濕式製程的關鍵,倘若製程環境變異將會導致基板產生品質不穩定的問題。 With the development of technology, the wet process technology has matured, making wet process equipment widely used in various manufacturing industries. However, there are still many problems to be solved in the traditional wet process equipment. For example, due to the poor design of some mechanisms, the maintenance of personnel is difficult, the liquid consumption of the equipment is large, the production cost is high, and the equipment is prone to liquid leakage. Damaged...etc. Furthermore, in the wet process, since the substrate is placed in a closed process chamber for a plurality of chemical processes, the process environment inside the process chamber is the key to affecting the wet process, and if the process environment is mutated, This causes problems in the quality of the substrate.
在傳統的濕製程設備中一般會在製程腔體的上方設置抽氣設備,用以將製程中所產生的氣體抽出腔體外。然而,由於將氣體抽出後製程腔體的局部位置會呈現負壓狀態,造成製程壓力受到影響,使得製程腔體內部難以保持有穩定的製程環境。 In conventional wet process equipment, a pumping device is generally disposed above the process chamber to draw the gas generated in the process out of the chamber. However, since the local position of the process chamber after the gas is extracted will exhibit a negative pressure state, the process pressure is affected, making it difficult to maintain a stable process environment inside the process chamber.
另一方面,為了提高製程效率通常會採用高溫製程的條件,將製程腔體內部保持在一高溫的條件下以提升各種化學反應的速度。然 而,由於製程效率的提升,使得在單位時間內製程中所產生的氣體量也相對的增多,進而加重抽氣設備的負擔。此外,為了維持製程腔體的內部壓力平衡,當氣體被抽出製程腔體外後會再填補相同的氣體量至該製程腔體內部。然而,由於填補的氣體通常為一種低溫或者是常溫的氣體,容易造成製程腔體內部的溫度下降,使得位於程腔體內部的加熱器必須經常使用及/或保持在高功率的狀態,導致濕製程設備的耗電量大以及加熱器的使用壽命減短。 On the other hand, in order to improve the process efficiency, the conditions of the high temperature process are usually employed, and the inside of the process chamber is maintained at a high temperature to increase the speed of various chemical reactions. Of course However, due to the improvement of the process efficiency, the amount of gas generated in the process per unit time is relatively increased, thereby increasing the burden on the pumping equipment. In addition, in order to maintain the internal pressure balance of the process chamber, the same amount of gas is filled into the interior of the process chamber when the gas is drawn out of the process chamber. However, since the filled gas is usually a low temperature or normal temperature gas, it is easy to cause the temperature inside the process chamber to drop, so that the heater located inside the process chamber must be frequently used and/or maintained in a high power state, resulting in wetness. The power consumption of the process equipment is large and the service life of the heater is shortened.
有鑑於此,有必要提供一種濕製程設備,以解決習知技術所存在的問題。 In view of the above, it is necessary to provide a wet process apparatus to solve the problems of the prior art.
為解決上述技術問題,本發明之目的在於提供一種濕製程設備,具有氣體循環裝置,並且該氣體循環裝置係與該製程腔體連通,用於將該製程腔體內抽出的氣體回送至該製程腔體內部,因而可有效地將該製程腔體內部的溫度與壓力皆維持在穩定的狀態。 In order to solve the above technical problem, an object of the present invention is to provide a wet process apparatus having a gas circulation device, and the gas circulation device is in communication with the process chamber for returning gas extracted from the process chamber to the process chamber The inside of the body can effectively maintain the temperature and pressure inside the process chamber in a stable state.
為達成上述目的,本發明提供一種具有氣體循環裝置之濕製程設備,包含:一製程腔體,包含分別位在該製程腔體之相對兩側壁之一第一排氣孔和一第一進氣孔;以及一氣體循環裝置,包括:一抽氣單元,設置在該製程腔體之外;以及一傳輸管路,與該抽氣單元連接,且與該第一排氣孔和該第一進氣孔連通,其中該抽氣單元將該製程腔體內之一氣體通過該第一排氣孔抽進該傳輸管路,並且該氣體通過該第一進氣孔回送至該製程腔體內部。 In order to achieve the above object, the present invention provides a wet process apparatus having a gas circulation device, comprising: a process chamber including a first exhaust hole and a first intake air respectively located on opposite side walls of the process cavity; And a gas circulation device comprising: an air extraction unit disposed outside the processing chamber; and a transmission line connected to the air extraction unit, and the first air outlet and the first inlet The air vent is connected, wherein the air pumping unit draws a gas in the processing chamber into the transmission line through the first venting hole, and the gas is returned to the inside of the processing cavity through the first air inlet hole.
於本發明其中之一較佳實施例中,該氣體循環裝置之該傳輸 管路包括:一第一管路和一第二管路,其中該第一管路之兩端分別與該第一排氣孔和該抽氣單元連通,以及該第二管路之兩端分別與該抽氣單元和該第一進氣孔連通。 In a preferred embodiment of the invention, the transmission of the gas circulation device The pipeline includes: a first pipeline and a second pipeline, wherein two ends of the first pipeline are respectively connected to the first exhaust hole and the air suction unit, and two ends of the second pipeline are respectively Communicating with the pumping unit and the first intake port.
於本發明其中之一較佳實施例中,該濕製程設備還包含一用於傳送一基板之傳送單元,設置在該製程腔體內部,其中該第一排氣孔係位在該傳送單元之上,以及該第一進氣孔係位在該傳送單元之下。 In a preferred embodiment of the present invention, the wet processing apparatus further includes a transfer unit for transporting a substrate disposed inside the process chamber, wherein the first exhaust hole is located in the transfer unit And the first intake port is below the transfer unit.
於本發明其中之一較佳實施例中,該製程腔體內設置有一液體噴灑單元,用於噴灑一製程液體,其中該第一排氣孔係位在該液體噴灑單元之上,以及該第一進氣孔係位在該液體噴灑單元之下。 In a preferred embodiment of the present invention, a liquid spraying unit is disposed in the processing chamber for spraying a process liquid, wherein the first exhaust hole is located above the liquid spraying unit, and the first The intake port is below the liquid spray unit.
於本發明其中之一較佳實施例中,該製程腔體還包含一第二排氣孔,與一氣體處理單元連通,用於讓該製程腔體內之該氣體排至該氣體處理單元。 In a preferred embodiment of the present invention, the process chamber further includes a second venting opening in communication with a gas processing unit for discharging the gas in the process chamber to the gas processing unit.
於本發明其中之一較佳實施例中,該第二排氣孔位於該製程腔體之一上壁且遠離該第一排氣孔的位置,該上壁與該製程腔體之該相對兩側壁連接。 In a preferred embodiment of the present invention, the second venting hole is located at an upper wall of the processing chamber and away from the first venting opening, and the upper wall and the processing cavity are opposite to each other. Side wall connection.
於本發明其中之一較佳實施例中,該濕製程設備還包含一氣液分離單元,連接在該製程腔體與該氣體處理單元之間,包括:一進氣管路,用於將該製程腔體內之一高濕度氣體輸入該氣液分離單元內;一反應管路,用於容置一過濾元件,使得通過該過濾元件之該高濕度氣體分離為一化學液體和一廢氣;以及一排氣管路延伸穿過該第二排氣孔,與該氣體處理單元連通,用於將該廢氣排入該氣體處理單元。 In a preferred embodiment of the present invention, the wet process apparatus further includes a gas-liquid separation unit coupled between the process chamber and the gas processing unit, including: an intake line for the process a high-humidity gas is introduced into the gas-liquid separation unit; a reaction line for accommodating a filter element, wherein the high-humidity gas passing through the filter element is separated into a chemical liquid and an exhaust gas; and a row A gas line extends through the second venting opening in communication with the gas processing unit for discharging the exhaust gas into the gas processing unit.
於本發明其中之一較佳實施例中,該氣液分離單元之該進氣 管路與該反應管路設置在該製程腔體之內部。 In one preferred embodiment of the present invention, the intake of the gas-liquid separation unit The pipeline and the reaction conduit are disposed inside the process chamber.
於本發明其中之一較佳實施例中,該濕製程設備還包含一用於傳送一基板之傳送單元,設置在該製程腔體內部,其中該氣液分離單元之該反應管路係大致沿著該基板的行進方向傾斜延伸。 In a preferred embodiment of the present invention, the wet processing apparatus further includes a transfer unit for transporting a substrate disposed inside the process chamber, wherein the reaction line of the gas-liquid separation unit is substantially along The traveling direction of the substrate extends obliquely.
於本發明其中之一較佳實施例中,該氣液分離單元與該基板相距一橫向距離。 In a preferred embodiment of the present invention, the gas-liquid separation unit is at a lateral distance from the substrate.
於本發明其中之一較佳實施例中,該氣液分離單元大約呈一「倒Y」形的形狀,其中該反應管路有一中央及兩端相對該中央向下傾斜,且該兩端分別與該進氣管路之相對一段連接,以及該排氣管路係和該反應管路的該中央連接並自該中央向上延伸。 In a preferred embodiment of the present invention, the gas-liquid separation unit has an approximately "inverted Y" shape, wherein the reaction tube has a center and two ends inclined downward with respect to the center, and the two ends are respectively A portion of the connection to the intake line and the central connection of the exhaust line and the reaction line extend upwardly from the center.
10、20‧‧‧濕製程設備 10, 20‧‧‧ Wet process equipment
100‧‧‧製程腔體 100‧‧‧Processing cavity
110‧‧‧第一排氣孔 110‧‧‧First vent
120‧‧‧第二排氣孔 120‧‧‧Second vent
130‧‧‧第一進氣孔 130‧‧‧First air intake
102‧‧‧第一側壁 102‧‧‧First side wall
104‧‧‧第二側壁 104‧‧‧second side wall
106‧‧‧上壁 106‧‧‧Upper wall
200‧‧‧氣體循環裝置 200‧‧‧ gas circulation device
210‧‧‧抽氣單元 210‧‧‧Pumping unit
220‧‧‧傳輸管路 220‧‧‧Transportation line
221‧‧‧第一管路 221‧‧‧First line
222‧‧‧第二管路 222‧‧‧Second pipeline
300‧‧‧傳送單元 300‧‧‧Transfer unit
310‧‧‧基板 310‧‧‧Substrate
400‧‧‧液體噴灑單元 400‧‧‧Liquid spray unit
500‧‧‧氣體處理單元 500‧‧‧Gas Handling Unit
610‧‧‧氣體 610‧‧‧ gas
620‧‧‧化學液體 620‧‧‧Chemical liquid
630‧‧‧廢氣 630‧‧‧Exhaust
700‧‧‧氣液分離單元 700‧‧‧ gas-liquid separation unit
710‧‧‧過濾元件 710‧‧‧Filter elements
720‧‧‧進氣管路 720‧‧‧Intake line
722‧‧‧排液口 722‧‧‧Draining port
730‧‧‧反應管路 730‧‧‧Reaction line
740‧‧‧排氣管路 740‧‧‧Exhaust line
X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction
L1‧‧‧橫向距離 L1‧‧‧ lateral distance
第1圖和第2圖分別顯示本發明之第一較佳實施例之濕製程設備之第一視圖和第二視圖;以及第3圖和第4圖分別顯示本發明之第二較佳實施例之濕製程設備之第一視圖和第二視圖。 1 and 2 respectively show a first view and a second view of a wet process apparatus according to a first preferred embodiment of the present invention; and Figs. 3 and 4 respectively show a second preferred embodiment of the present invention The first view and the second view of the wet process device.
為了讓本發明之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本發明較佳實施例,並配合所附圖式,作詳細說明如下。 The above and other objects, features and advantages of the present invention will become more <RTIgt;
請參照第1圖和第2圖,其分別顯示本發明之第一較佳實施例之濕製程設備10之第一視圖和第二視圖。該濕製程設備10包含製程腔體100、氣體循環裝置200、傳送單元300、液體噴灑單元400、和氣體處理單 元500。該製程腔體100包含相對的第一側壁102和第二側壁104,以及與該第一側壁102和該第二側壁104連接的上壁106。該製程腔體100之該第一側壁102上形成第一排氣孔110,該第二側壁104上形成第一進氣孔130,以及該上壁106上形成第二排氣孔120。該傳送單元300設置在該製程腔體100內部,用於傳送基板310。該液體噴灑單元400同樣設置在該製程腔體100內部,用於噴灑製程液體以對該基板310進行濕式處理,例如蝕刻。該基板310可為一半導體基板,像是一薄膜電晶體基板(thin film transistor substrate)。又,該氣體處理單元500與該製程腔體100之該第二排氣孔120連通,用於處理濕式製程後所產生的氣體610。該氣體610為一高濕度氣體,內含有化學液體微粒(droplets)。 Referring to Figures 1 and 2, there are shown first and second views, respectively, of the wet process apparatus 10 of the first preferred embodiment of the present invention. The wet processing apparatus 10 includes a process chamber 100, a gas circulation device 200, a transfer unit 300, a liquid spray unit 400, and a gas processing unit Yuan 500. The process chamber 100 includes opposing first and second sidewalls 102, 104, and an upper wall 106 coupled to the first sidewall 102 and the second sidewall 104. A first exhaust hole 110 is formed in the first sidewall 102 of the process chamber 100, a first air inlet hole 130 is formed on the second sidewall 104, and a second exhaust hole 120 is formed in the upper wall 106. The transfer unit 300 is disposed inside the process chamber 100 for transferring the substrate 310. The liquid spray unit 400 is also disposed inside the process chamber 100 for spraying process liquid to wet-process the substrate 310, such as etching. The substrate 310 can be a semiconductor substrate such as a thin film transistor substrate. Moreover, the gas processing unit 500 is in communication with the second exhaust hole 120 of the process chamber 100 for processing the gas 610 generated after the wet process. The gas 610 is a high humidity gas containing chemical liquid droplets.
如第1圖和第2圖所示,該氣體循環裝置200係位於該製程腔體100的外部,並且包含抽氣單元210和傳輸管路220,其中該傳輸管路220包括第一管路221和第二管路222。該傳輸管路220之該第一管路221的兩端分別和該製程腔體100之該第一排氣孔110與該抽氣單元210連通,以及該傳輸管路220之該第二管路222的兩端分別和該製程腔體100之該第一進氣孔130與該抽氣單元210連通。運作時,該氣體循環裝置200之該抽氣單元210提供一動力將該製程腔體100內之氣體610通過該第一排氣孔110抽進該傳輸管路220之該第一管路221內。接著該氣體610經由該抽氣單元210傳輸到該第二管路222內。最後該氣體610通過該第一進氣孔130回送至該製程腔體100內部。 As shown in FIGS. 1 and 2, the gas circulation device 200 is located outside the process chamber 100 and includes an air extraction unit 210 and a transmission line 220, wherein the transmission line 220 includes a first line 221 And a second line 222. The two ends of the first line 221 of the transmission line 220 and the first exhaust hole 110 of the process chamber 100 are respectively connected to the pumping unit 210, and the second line of the transmission line 220 Both ends of the 222 and the first air inlet 130 of the process chamber 100 are in communication with the air extraction unit 210. In operation, the pumping unit 210 of the gas circulation device 200 provides a power to pump the gas 610 in the process chamber 100 into the first conduit 221 of the transmission line 220 through the first exhaust hole 110. . The gas 610 is then transferred to the second line 222 via the pumping unit 210. Finally, the gas 610 is returned to the interior of the process chamber 100 through the first air inlet hole 130.
如第1圖和第2圖所示,該第一排氣孔110較佳地位在該傳送單元300和該液體噴灑單元400之上方位置,以及該第一進氣孔130較佳地位 在該傳送單元300和該液體噴灑單元400之下方位置。並且,該第一排氣孔110和該第二排氣孔120設置在該製程腔體100中大致相對的兩側。更明確地說,該第一排氣孔110是位在該製程腔體100之該第一側壁102,以及該第二排氣孔120是位在該上壁106鄰近該製程腔體100之該第二側壁104之一側上。因此,該第二排氣孔120係遠離該第一排氣孔110。藉此,當第一排氣孔110和該第二排氣孔120同時在抽氣時,該製程腔體100兩側的氣壓平衡,不會產生單邊壓力偏高的問題。並且,通過該氣體循環裝置200將該氣體610回送至該製程腔體100的下方,使得該製程腔體100上下側的氣壓平衡,進而將該製程腔體100內部維持在穩定的製程環境。另一方面,為了維持該製程腔體100的內部壓力平衡,當該氣體610經由該第二排氣孔120被抽入該氣體處理單元500後會再填補相同的氣量的製程氣體至該製程腔體100內部。然而,由於本發明之該氣體循環裝置200會將氣體回送至該製程腔體100內部,因而可有效的減少製程氣體的使用量。再者,由於經由該氣體循環裝置200回送至該製程腔體100內的該氣體610的溫度與製程腔體100內部的溫度相當,因而可避免因導入大量的製程氣體導致降低該製程腔體100內部環境溫度的問題,故可有效的降低該製程腔體100內部之加熱器的使用時間及/或功率,以提高該加熱器的使用壽命。 As shown in FIGS. 1 and 2, the first exhaust hole 110 is preferably positioned above the transfer unit 300 and the liquid spray unit 400, and the first intake hole 130 is preferably positioned. Below the transfer unit 300 and the liquid spray unit 400. Moreover, the first exhaust hole 110 and the second exhaust hole 120 are disposed on substantially opposite sides of the process cavity 100. More specifically, the first exhaust hole 110 is located at the first sidewall 102 of the process chamber 100, and the second exhaust hole 120 is located adjacent to the process chamber 100. On one side of the second side wall 104. Therefore, the second exhaust hole 120 is away from the first exhaust hole 110. Thereby, when the first exhaust hole 110 and the second exhaust hole 120 are simultaneously pumping, the air pressure on both sides of the process chamber 100 is balanced, and the problem of high unilateral pressure is not generated. Moreover, the gas 610 is returned to the lower side of the process chamber 100 by the gas circulation device 200, so that the air pressure on the upper and lower sides of the process chamber 100 is balanced, thereby maintaining the interior of the process chamber 100 in a stable process environment. On the other hand, in order to maintain the internal pressure balance of the process chamber 100, when the gas 610 is drawn into the gas processing unit 500 via the second exhaust hole 120, the same amount of process gas is filled into the process chamber. Inside the body 100. However, since the gas circulation device 200 of the present invention returns gas to the inside of the process chamber 100, the amount of process gas used can be effectively reduced. Moreover, since the temperature of the gas 610 fed back into the process chamber 100 via the gas circulation device 200 is equivalent to the temperature inside the process chamber 100, the process chamber 100 can be prevented from being lowered due to the introduction of a large amount of process gas. The problem of the internal ambient temperature can effectively reduce the service time and/or power of the heater inside the process chamber 100 to improve the service life of the heater.
請參照第3圖和第4圖,其分別顯示本發明之第二較佳實施例之濕製程設備20之第一視圖和第二視圖。本發明之第二較佳實施例之濕製程設備20相似於本發明之第一實施例之該濕製程設備10,同樣包含製程腔體100、氣體循環裝置200、傳送單元300、液體噴灑單元400、和氣體處理單元500,故在此不加以贅述。相較於本發明之第一實施例之該濕製程設備 10,第二較佳實施例之濕製程設備20還包含氣液分離單元700。該氣液分離單元700連接在該製程腔體100與該氣體處理單元500之間,用於將該製程腔體100內之濕式製程後產生的氣體610進行氣液分離。該氣體處理單元500用於處理氣液分離後的廢氣630。該傳送單元300設置在該製程腔體100內部,用於將基板310朝Y方向傳送。 Referring to Figures 3 and 4, there are shown first and second views, respectively, of the wet processing apparatus 20 of the second preferred embodiment of the present invention. The wet processing apparatus 20 of the second preferred embodiment of the present invention is similar to the wet processing apparatus 10 of the first embodiment of the present invention, and also includes the process chamber 100, the gas circulation device 200, the transfer unit 300, and the liquid spray unit 400. And the gas processing unit 500, so it will not be described here. The wet process apparatus compared to the first embodiment of the present invention 10. The wet process apparatus 20 of the second preferred embodiment further includes a gas-liquid separation unit 700. The gas-liquid separation unit 700 is connected between the process chamber 100 and the gas processing unit 500 for gas-liquid separation of the gas 610 generated after the wet process in the process chamber 100. The gas processing unit 500 is for processing the exhaust gas 630 after the gas-liquid separation. The transfer unit 300 is disposed inside the process chamber 100 for transporting the substrate 310 in the Y direction.
如第3圖所示,該氣液分離單元700包含一對進氣管路720、一反應管路730、一排氣管路740以及設置在該反應管路730內的過濾元件710,其中該對進氣管路720、該反應管路730、和該排氣管路740係沿著一縱向方向(Z方向)依序向上延伸,使得該排氣管路740位於一相對較高的位置以及該對進氣管路720位於一相對較低的位置。另外,該反應管路730係大致沿著該基板310行進方向Y傾斜延伸。如此,該氣液分離單元700有一大致為「倒Y」形的形狀。 As shown in FIG. 3, the gas-liquid separation unit 700 includes a pair of intake lines 720, a reaction line 730, an exhaust line 740, and a filter element 710 disposed in the reaction line 730, wherein The intake line 720, the reaction line 730, and the exhaust line 740 extend sequentially in a longitudinal direction (Z direction) such that the exhaust line 740 is located at a relatively high position and The pair of intake lines 720 are in a relatively low position. In addition, the reaction line 730 extends obliquely substantially along the traveling direction Y of the substrate 310. As such, the gas-liquid separation unit 700 has a substantially "inverted Y" shape.
如第3圖所示,該對進氣管路720設置在該反應管路730的兩端,以及該排氣管路740設置在該反應管路730的中央並向上延伸。該反應管路730的兩端自其中央朝離開彼此的方向向下傾斜延伸。該對進氣管路720用於將該製程腔體100產生的氣體610輸入該氣液分離單元700之該反應管路730內。該氣體610為一高濕度氣體,內含有化學液體微粒(droplets)。該反應管路730是用於容置該過濾元件710。當該氣體610通過該過濾元件710時,該氣體610中之化學液體微粒會凝結和附著在該過濾元件710上,藉此將該氣體610分離為化學液體620和廢氣630。該排氣管路740穿過位在該製程腔體100上方的第二排氣孔120來延伸至該製程腔體100的外部,以將氣液分離後的該廢氣630排入與其連通的該氣體處理單元500內。 As shown in FIG. 3, the pair of intake lines 720 are disposed at both ends of the reaction line 730, and the exhaust line 740 is disposed at the center of the reaction line 730 and extends upward. Both ends of the reaction line 730 extend obliquely downward from the center thereof in a direction away from each other. The pair of intake lines 720 are used to input the gas 610 generated by the process chamber 100 into the reaction line 730 of the gas-liquid separation unit 700. The gas 610 is a high humidity gas containing chemical liquid droplets. The reaction line 730 is for accommodating the filter element 710. When the gas 610 passes through the filter element 710, chemical liquid particles in the gas 610 will condense and adhere to the filter element 710, thereby separating the gas 610 into a chemical liquid 620 and an exhaust gas 630. The exhaust line 740 extends through the second exhaust hole 120 located above the process chamber 100 to the outside of the process chamber 100 to discharge the gas-liquid separated exhaust gas 630 into the same Inside the gas processing unit 500.
如第3圖所示,該氣液分離單元700之該對進氣管路720與該反應管路730皆係設置在該製程腔體100之內部。再者,該反應管路730係設計為兩側相對一水平面(即XY平面)傾斜的結構,即,該反應管路730之中央相對於其兩端設置在較高的位置,使得氣液分離後的該化學液體620會沿著傾斜的管壁,經由位在該進氣管路720下方的排液口722流回至該製程腔體100之底部;接著藉由一連通至該製程腔體100之底部的液體回收單元(未繪示於圖中)收集該化學液體620以進行回收再利用,進而降低生產成本。另一方面,由於本發明的氣液分離反應是在該製程腔體100內部完成,使得氣液分離後的該化學液體620不會流到該製程腔體100的外部,進而避免造成該製程腔體100的損壞以及危害到操作人員的安全。此外,由於該氣液分離單元700的大部分元件是設置在該製程腔體100的內部,使得人員在維修和保養該氣液分離單元700時較為方便。 As shown in FIG. 3, the pair of intake lines 720 and the reaction line 730 of the gas-liquid separation unit 700 are disposed inside the process chamber 100. Furthermore, the reaction line 730 is designed to be inclined at both sides with respect to a horizontal plane (ie, the XY plane), that is, the center of the reaction line 730 is disposed at a higher position relative to both ends thereof, so that the gas-liquid separation The subsequent chemical liquid 620 will flow back along the inclined pipe wall to the bottom of the process chamber 100 via the liquid discharge port 722 located below the intake pipe 720; and then communicated to the process chamber by a connection The liquid recovery unit (not shown) at the bottom of 100 collects the chemical liquid 620 for recycling and reuse, thereby reducing production costs. On the other hand, since the gas-liquid separation reaction of the present invention is completed inside the process chamber 100, the chemical liquid 620 after the gas-liquid separation does not flow to the outside of the process chamber 100, thereby avoiding the process chamber. Damage to the body 100 and the safety of the operator. In addition, since most of the components of the gas-liquid separation unit 700 are disposed inside the process chamber 100, it is convenient for a person to repair and maintain the gas-liquid separation unit 700.
如第4圖所示,從側面視之時,該氣液分離單元700與該基板310分別保持在相距一橫向距離L1的位置,使得從該氣液分離單元700滴落的該化學液體620不會影響到濕製程的進行,因而避免該化學液體620對該基板310的反應液體造成汙染。 As shown in FIG. 4, the gas-liquid separation unit 700 and the substrate 310 are respectively maintained at a position separated by a lateral distance L1 when viewed from the side, so that the chemical liquid 620 dropped from the gas-liquid separation unit 700 is not The progress of the wet process is affected, thereby preventing the chemical liquid 620 from contaminating the reaction liquid of the substrate 310.
綜上所述,本發明通過設置與該製程腔體100連通的該氣體循環裝置200,使得該製程腔體100內部可維持在穩定的製程壓力。再者,由於經由該氣體循環裝置200回送至該製程腔體100內的該氣體610的溫度與製程腔體100內部的溫度相當,因而可有效的降低該製程腔體100內部之加熱器的使用時間及/或功率,以提高該加熱器的使用壽命。另一方面,本發明通過將該氣液分離單元700之一部分設置在該製程腔體100的內部,使 得氣液分離反應是在該製程腔體100內部完成。因此,氣液分離後的該化學液體620不會流到該製程腔體100的外部,進而避免造成該製程腔體100的損壞以及危害到操作人員的安全。 In summary, the present invention maintains a stable process pressure inside the process chamber 100 by providing the gas circulation device 200 in communication with the process chamber 100. Moreover, since the temperature of the gas 610 fed back into the process chamber 100 via the gas circulation device 200 is equivalent to the temperature inside the process chamber 100, the use of the heater inside the process chamber 100 can be effectively reduced. Time and / or power to increase the life of the heater. On the other hand, the present invention provides a portion of the gas-liquid separation unit 700 in the interior of the process chamber 100 so that The gas-liquid separation reaction is completed inside the process chamber 100. Therefore, the chemical liquid 620 after the gas-liquid separation does not flow to the outside of the process chamber 100, thereby avoiding damage to the process chamber 100 and endangering the safety of the operator.
雖然本發明已用較佳實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the invention has been described above in terms of the preferred embodiments, the invention is not intended to limit the invention, and the invention may be practiced without departing from the spirit and scope of the invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims.
10‧‧‧濕製程設備 10‧‧‧ Wet process equipment
100‧‧‧製程腔體 100‧‧‧Processing cavity
110‧‧‧第一排氣孔 110‧‧‧First vent
120‧‧‧第二排氣孔 120‧‧‧Second vent
130‧‧‧第一進氣孔 130‧‧‧First air intake
102‧‧‧第一側壁 102‧‧‧First side wall
104‧‧‧第二側壁 104‧‧‧second side wall
106‧‧‧上壁 106‧‧‧Upper wall
200‧‧‧氣體循環裝置 200‧‧‧ gas circulation device
210‧‧‧抽氣單元 210‧‧‧Pumping unit
220‧‧‧傳輸管路 220‧‧‧Transportation line
221‧‧‧第一管路 221‧‧‧First line
222‧‧‧第二管路 222‧‧‧Second pipeline
300‧‧‧傳送單元 300‧‧‧Transfer unit
310‧‧‧基板 310‧‧‧Substrate
400‧‧‧液體噴灑單元 400‧‧‧Liquid spray unit
500‧‧‧氣體處理單元 500‧‧‧Gas Handling Unit
610‧‧‧氣體 610‧‧‧ gas
X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction
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