TWI592766B - 微影投影曝光設備的光學系統 - Google Patents
微影投影曝光設備的光學系統 Download PDFInfo
- Publication number
- TWI592766B TWI592766B TW102146156A TW102146156A TWI592766B TW I592766 B TWI592766 B TW I592766B TW 102146156 A TW102146156 A TW 102146156A TW 102146156 A TW102146156 A TW 102146156A TW I592766 B TWI592766 B TW I592766B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- polarization
- reflective surfaces
- mirror
- light
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims description 72
- 230000010287 polarization Effects 0.000 claims description 96
- 238000005286 illumination Methods 0.000 claims description 30
- 210000001747 pupil Anatomy 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 230000003116 impacting effect Effects 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 230000001427 coherent effect Effects 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 239000003574 free electron Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
- G02B5/3091—Birefringent or phase retarding elements for use in the UV
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Polarising Elements (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012223233.8A DE102012223233A1 (de) | 2012-12-14 | 2012-12-14 | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201435515A TW201435515A (zh) | 2014-09-16 |
| TWI592766B true TWI592766B (zh) | 2017-07-21 |
Family
ID=50821372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102146156A TWI592766B (zh) | 2012-12-14 | 2013-12-13 | 微影投影曝光設備的光學系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9720327B2 (enExample) |
| JP (1) | JP6510979B2 (enExample) |
| CN (1) | CN104854510B (enExample) |
| DE (1) | DE102012223233A1 (enExample) |
| TW (1) | TWI592766B (enExample) |
| WO (1) | WO2014090635A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| JP7102218B2 (ja) * | 2018-05-09 | 2022-07-19 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び方法 |
| US10962885B2 (en) * | 2018-09-28 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet (EUV) polarization splitter |
| DE102019200193B3 (de) * | 2019-01-09 | 2020-02-06 | Carl Zeiss Smt Gmbh | Optisches System für eine Projektionsbelichtungsanlage |
| CN115901786A (zh) * | 2022-12-09 | 2023-04-04 | 彩虹显示器件股份有限公司 | 一种线扫描相机检测玻璃边缘的装置及方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108131A (en) * | 1998-05-14 | 2000-08-22 | Moxtek | Polarizer apparatus for producing a generally polarized beam of light |
| US6208463B1 (en) | 1998-05-14 | 2001-03-27 | Moxtek | Polarizer apparatus for producing a generally polarized beam of light |
| US6137618A (en) * | 1999-02-08 | 2000-10-24 | J. A. Woollam Co. Inc. | Compact, high extinction coefficient combination brewster angle and other than brewster angle polarizing system, and method of use |
| EP1356476B1 (de) | 2001-01-26 | 2006-08-23 | Carl Zeiss SMT AG | Schmalbandiger spektralfilter und seine verwendung |
| JP3652296B2 (ja) * | 2001-10-26 | 2005-05-25 | キヤノン株式会社 | 光学装置 |
| GB2408588A (en) * | 2003-11-27 | 2005-06-01 | Sharp Kk | Polarisation conversion optical system eg with dispersion compensation for liquid crystal projection |
| WO2006111319A2 (en) * | 2005-04-20 | 2006-10-26 | Carl Zeiss Smt Ag | Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system |
| US7525642B2 (en) * | 2006-02-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102008009601A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren |
| DE102008002749A1 (de) * | 2008-06-27 | 2009-12-31 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die Mikrolithografie |
| DE102008041801A1 (de) | 2008-09-03 | 2010-03-04 | Carl Zeiss Smt Ag | Spektralfilter für die EUV-Mikrolithographie |
| JP4794649B2 (ja) * | 2009-04-24 | 2011-10-19 | 株式会社アマダ | レーザ加工用偏光変換器 |
| DE102009045135A1 (de) | 2009-09-30 | 2011-03-31 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
| DE102011003928B4 (de) | 2011-02-10 | 2012-10-31 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
| DE102012219936A1 (de) | 2012-10-31 | 2014-04-30 | Carl Zeiss Smt Gmbh | EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage |
| DE102013200137A1 (de) | 2013-01-08 | 2013-11-14 | Carl Zeiss Smt Gmbh | Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102013202645A1 (de) | 2013-02-19 | 2014-02-27 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
| DE102013205957A1 (de) | 2013-04-04 | 2014-04-30 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
-
2012
- 2012-12-14 DE DE102012223233.8A patent/DE102012223233A1/de not_active Withdrawn
-
2013
- 2013-12-03 WO PCT/EP2013/075383 patent/WO2014090635A1/en not_active Ceased
- 2013-12-03 JP JP2015546938A patent/JP6510979B2/ja active Active
- 2013-12-03 CN CN201380065563.2A patent/CN104854510B/zh active Active
- 2013-12-13 TW TW102146156A patent/TWI592766B/zh active
-
2015
- 2015-05-26 US US14/721,426 patent/US9720327B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9720327B2 (en) | 2017-08-01 |
| JP2016503186A (ja) | 2016-02-01 |
| TW201435515A (zh) | 2014-09-16 |
| CN104854510A (zh) | 2015-08-19 |
| DE102012223233A1 (de) | 2014-06-18 |
| US20150253677A1 (en) | 2015-09-10 |
| WO2014090635A1 (en) | 2014-06-19 |
| JP6510979B2 (ja) | 2019-05-08 |
| CN104854510B (zh) | 2017-07-18 |
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