TWI588892B - 利用鈍化反應的銅之非等向性蝕刻 - Google Patents

利用鈍化反應的銅之非等向性蝕刻 Download PDF

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Publication number
TWI588892B
TWI588892B TW104120667A TW104120667A TWI588892B TW I588892 B TWI588892 B TW I588892B TW 104120667 A TW104120667 A TW 104120667A TW 104120667 A TW104120667 A TW 104120667A TW I588892 B TWI588892 B TW I588892B
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TW
Taiwan
Prior art keywords
containing layer
etching
gas
plasma processing
plasma
Prior art date
Application number
TW104120667A
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English (en)
Chinese (zh)
Other versions
TW201620034A (zh
Inventor
立 陳
郢 張
Original Assignee
東京威力科創股份有限公司
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Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201620034A publication Critical patent/TW201620034A/zh
Application granted granted Critical
Publication of TWI588892B publication Critical patent/TWI588892B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
TW104120667A 2014-06-30 2015-06-26 利用鈍化反應的銅之非等向性蝕刻 TWI588892B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/320,058 US9290848B2 (en) 2014-06-30 2014-06-30 Anisotropic etch of copper using passivation

Publications (2)

Publication Number Publication Date
TW201620034A TW201620034A (zh) 2016-06-01
TWI588892B true TWI588892B (zh) 2017-06-21

Family

ID=54929895

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120667A TWI588892B (zh) 2014-06-30 2015-06-26 利用鈍化反應的銅之非等向性蝕刻

Country Status (7)

Country Link
US (1) US9290848B2 (https=)
EP (1) EP3161861A4 (https=)
JP (1) JP6584022B2 (https=)
KR (1) KR102457878B1 (https=)
SG (1) SG11201610893WA (https=)
TW (1) TWI588892B (https=)
WO (1) WO2016003596A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017045849A (ja) * 2015-08-26 2017-03-02 東京エレクトロン株式会社 シーズニング方法およびエッチング方法
JP6745199B2 (ja) * 2016-06-10 2020-08-26 東京エレクトロン株式会社 銅層をエッチングする方法
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
KR102355416B1 (ko) * 2017-06-22 2022-01-24 어플라이드 머티어리얼스, 인코포레이티드 구리 패터닝을 위한 플라즈마 에칭
JP7066263B2 (ja) * 2018-01-23 2022-05-13 株式会社ディスコ 加工方法、エッチング装置、及びレーザ加工装置
US11104988B2 (en) 2018-02-22 2021-08-31 Universal Display Corporation Modular confined organic print head and system
KR102081614B1 (ko) * 2018-03-29 2020-02-26 인하대학교 산학협력단 구리 박막의 건식 식각방법
KR102830458B1 (ko) * 2018-03-30 2025-07-04 램 리써치 코포레이션 플루오로카본 차단 층들을 사용하는 토포그래픽-선택적이고 영역-선택적인 ald
US11688586B2 (en) * 2018-08-30 2023-06-27 Tokyo Electron Limited Method and apparatus for plasma processing
KR102030548B1 (ko) * 2018-11-15 2019-10-10 인하대학교 산학협력단 구리 박막의 건식 식각방법
US11955318B2 (en) * 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber
US11557487B2 (en) * 2021-06-04 2023-01-17 Tokyo Electron Limited Etching metal during processing of a semiconductor structure
WO2023278171A1 (en) * 2021-06-29 2023-01-05 Lam Research Corporation Multiple state pulsing for high aspect ratio etch
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010966A (en) * 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2926864B2 (ja) * 1990-04-12 1999-07-28 ソニー株式会社 銅系金属膜のエッチング方法
JPH04243134A (ja) * 1991-01-18 1992-08-31 Sony Corp 銅系金属配線の形成方法
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US6284052B2 (en) * 1998-08-19 2001-09-04 Sharp Laboratories Of America, Inc. In-situ method of cleaning a metal-organic chemical vapor deposition chamber
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US7214327B2 (en) 2002-06-28 2007-05-08 Tokyo Electron Limited Anisotropic dry etching of Cu-containing layers
WO2008153674A1 (en) 2007-06-09 2008-12-18 Boris Kobrin Method and apparatus for anisotropic etching
JP2012054304A (ja) 2010-08-31 2012-03-15 Tokyo Electron Ltd エッチング方法及びエッチング装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6010966A (en) * 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers

Also Published As

Publication number Publication date
EP3161861A4 (en) 2018-07-18
US9290848B2 (en) 2016-03-22
SG11201610893WA (en) 2017-01-27
KR102457878B1 (ko) 2022-10-21
JP6584022B2 (ja) 2019-10-02
JP2017520938A (ja) 2017-07-27
EP3161861A1 (en) 2017-05-03
KR20170020530A (ko) 2017-02-22
WO2016003596A1 (en) 2016-01-07
US20150376797A1 (en) 2015-12-31
TW201620034A (zh) 2016-06-01

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