SG11201610893WA - Anisotropic etch of copper using passivation - Google Patents
Anisotropic etch of copper using passivationInfo
- Publication number
- SG11201610893WA SG11201610893WA SG11201610893WA SG11201610893WA SG11201610893WA SG 11201610893W A SG11201610893W A SG 11201610893WA SG 11201610893W A SG11201610893W A SG 11201610893WA SG 11201610893W A SG11201610893W A SG 11201610893WA SG 11201610893W A SG11201610893W A SG 11201610893WA
- Authority
- SG
- Singapore
- Prior art keywords
- passivation
- copper
- anisotropic etch
- anisotropic
- etch
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/320,058 US9290848B2 (en) | 2014-06-30 | 2014-06-30 | Anisotropic etch of copper using passivation |
PCT/US2015/034259 WO2016003596A1 (en) | 2014-06-30 | 2015-06-04 | Anisotropic etch of copper using passivation |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201610893WA true SG11201610893WA (en) | 2017-01-27 |
Family
ID=54929895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201610893WA SG11201610893WA (en) | 2014-06-30 | 2015-06-04 | Anisotropic etch of copper using passivation |
Country Status (7)
Country | Link |
---|---|
US (1) | US9290848B2 (en) |
EP (1) | EP3161861A4 (en) |
JP (1) | JP6584022B2 (en) |
KR (1) | KR102457878B1 (en) |
SG (1) | SG11201610893WA (en) |
TW (1) | TWI588892B (en) |
WO (1) | WO2016003596A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017045849A (en) * | 2015-08-26 | 2017-03-02 | 東京エレクトロン株式会社 | Seasoning method and etching method |
WO2017213193A1 (en) * | 2016-06-10 | 2017-12-14 | 東京エレクトロン株式会社 | Method for etching copper layer |
JP6745199B2 (en) * | 2016-06-10 | 2020-08-26 | 東京エレクトロン株式会社 | How to etch a copper layer |
CN110770881B (en) * | 2017-06-22 | 2023-09-26 | 应用材料公司 | Plasma etching for patterning of copper |
JP7066263B2 (en) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | Machining method, etching equipment, and laser processing equipment |
US11104988B2 (en) | 2018-02-22 | 2021-08-31 | Universal Display Corporation | Modular confined organic print head and system |
KR102081614B1 (en) * | 2018-03-29 | 2020-02-26 | 인하대학교 산학협력단 | Method for Dry Etching of Copper Thin Films |
CN112041966A (en) * | 2018-03-30 | 2020-12-04 | 朗姆研究公司 | Topographically and regioselectively ALD using fluorocarbon blocking layers |
US11688586B2 (en) * | 2018-08-30 | 2023-06-27 | Tokyo Electron Limited | Method and apparatus for plasma processing |
KR102030548B1 (en) * | 2018-11-15 | 2019-10-10 | 인하대학교 산학협력단 | Method for Dry Etching of Copper Thin Films |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2926864B2 (en) * | 1990-04-12 | 1999-07-28 | ソニー株式会社 | Copper-based metal film etching method |
US5350484A (en) | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
US6010966A (en) * | 1998-08-07 | 2000-01-04 | Applied Materials, Inc. | Hydrocarbon gases for anisotropic etching of metal-containing layers |
US6692903B2 (en) | 2000-12-13 | 2004-02-17 | Applied Materials, Inc | Substrate cleaning apparatus and method |
WO2004003256A1 (en) * | 2002-06-28 | 2004-01-08 | Tokyo Electron Limited | Anisotropic dry etching of cu-containing layers |
WO2008153674A1 (en) | 2007-06-09 | 2008-12-18 | Boris Kobrin | Method and apparatus for anisotropic etching |
JP2012054304A (en) | 2010-08-31 | 2012-03-15 | Tokyo Electron Ltd | Etching method and etching apparatus |
-
2014
- 2014-06-30 US US14/320,058 patent/US9290848B2/en active Active
-
2015
- 2015-06-04 EP EP15815902.0A patent/EP3161861A4/en not_active Withdrawn
- 2015-06-04 KR KR1020177002491A patent/KR102457878B1/en active IP Right Grant
- 2015-06-04 SG SG11201610893WA patent/SG11201610893WA/en unknown
- 2015-06-04 WO PCT/US2015/034259 patent/WO2016003596A1/en active Application Filing
- 2015-06-04 JP JP2017521053A patent/JP6584022B2/en active Active
- 2015-06-26 TW TW104120667A patent/TWI588892B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20170020530A (en) | 2017-02-22 |
TWI588892B (en) | 2017-06-21 |
US20150376797A1 (en) | 2015-12-31 |
EP3161861A1 (en) | 2017-05-03 |
EP3161861A4 (en) | 2018-07-18 |
WO2016003596A1 (en) | 2016-01-07 |
TW201620034A (en) | 2016-06-01 |
US9290848B2 (en) | 2016-03-22 |
JP2017520938A (en) | 2017-07-27 |
JP6584022B2 (en) | 2019-10-02 |
KR102457878B1 (en) | 2022-10-21 |
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