TWI586760B - 量子點組合物 - Google Patents
量子點組合物 Download PDFInfo
- Publication number
- TWI586760B TWI586760B TW104108723A TW104108723A TWI586760B TW I586760 B TWI586760 B TW I586760B TW 104108723 A TW104108723 A TW 104108723A TW 104108723 A TW104108723 A TW 104108723A TW I586760 B TWI586760 B TW I586760B
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- Prior art keywords
- pdms
- quantum dot
- composition
- polymer
- polyoxyalkylene
- Prior art date
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- 239000002096 quantum dot Substances 0.000 title claims description 96
- 239000000203 mixture Substances 0.000 title claims description 20
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 44
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 44
- 239000003446 ligand Substances 0.000 claims description 35
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 229920000642 polymer Polymers 0.000 claims description 25
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011324 bead Substances 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002981 blocking agent Substances 0.000 claims description 4
- -1 polydimethylsiloxane Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- XTDKZSUYCXHXJM-UHFFFAOYSA-N 2-methoxyoxane Chemical compound COC1CCCCO1 XTDKZSUYCXHXJM-UHFFFAOYSA-N 0.000 claims description 3
- 229920002675 Polyoxyl Polymers 0.000 claims description 2
- 150000003973 alkyl amines Chemical class 0.000 claims description 2
- 150000004982 aromatic amines Chemical class 0.000 claims description 2
- 150000004668 long chain fatty acids Chemical class 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 229930192474 thiophene Natural products 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 4
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 4
- 150000003573 thiols Chemical class 0.000 claims 4
- 229920006324 polyoxymethylene Polymers 0.000 claims 2
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 12
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- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 238000006862 quantum yield reaction Methods 0.000 description 8
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- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 7
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- 229910052703 rhodium Inorganic materials 0.000 description 7
- 239000010948 rhodium Substances 0.000 description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 101000801643 Homo sapiens Retinal-specific phospholipid-transporting ATPase ABCA4 Proteins 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 102100033617 Retinal-specific phospholipid-transporting ATPase ABCA4 Human genes 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
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- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
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- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 3
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- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 239000003431 cross linking reagent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- GMSCBRSQMRDRCD-UHFFFAOYSA-N dodecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCOC(=O)C(C)=C GMSCBRSQMRDRCD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 125000003700 epoxy group Chemical group 0.000 description 2
- 230000032050 esterification Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 239000000178 monomer Substances 0.000 description 2
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- 238000007539 photo-oxidation reaction Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012855 volatile organic compound Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DTGKSKDOIYIVQL-MRTMQBJTSA-N (-)-isoborneol Chemical compound C1C[C@@]2(C)[C@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-MRTMQBJTSA-N 0.000 description 1
- GPAAEXYTRXIWHR-UHFFFAOYSA-N (1-methylpiperidin-1-ium-1-yl)methanesulfonate Chemical compound [O-]S(=O)(=O)C[N+]1(C)CCCCC1 GPAAEXYTRXIWHR-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910000796 S alloy Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000090 biomarker Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- DTGKSKDOIYIVQL-UHFFFAOYSA-N dl-isoborneol Natural products C1CC2(C)C(O)CC1C2(C)C DTGKSKDOIYIVQL-UHFFFAOYSA-N 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
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- 231100000053 low toxicity Toxicity 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
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- 238000010926 purge Methods 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
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Description
本申請案主張2014年3月18日申請之美國臨時申請案第61/954,860之權利,其全文以引用方式併入本文中。
不適用
本發明一般係關於包括發光半導體量子點(QD)之材料。更特定而言,其係關於併入基於矽氧烷之聚合物之QD。
包含37CER1.97及1.98揭示資訊之先前技術描述
發光二極體(LED)在每日生活中變得更加重要及據設想其將變成呈眾多照明形式(諸如汽車燈、交通訊號、一般照明、液晶顯示器(LCD)背光及顯示屏)之主要應用之一。目前,LED裝置通常由無機固態化合物半導體,諸如AlGaAs(紅色)、AlGalnP(橘色-黃色-綠色)、及AlGalnN(綠色-藍色)製成。然而,使用該可用固態化合物半導體之混合物,不能製造發射白光之固態LED。此外,難於藉由混合不同頻率之固態LED來製造「純」色。因此,製造所需顏色(包括白色)之顏色混合之主要當前方法,係使用放置於固態LED頂部之磷光材料之組合,由此來自該LED之光(「原色光」)由磷光材料吸收及隨後以不同頻率再發射(「二次光」),即,該磷光材料將原色光降頻轉換為二次
光。此外,使用由磷光體降頻轉換製造之白色LED導致與固態紅綠藍LED之組合相比更低成本及更簡單裝置製造。
目前用於降頻轉換應用之磷光材料吸收UV或主要藍光及將其轉換為更長波長,其中目前最多磷光體使用三價稀土摻雜氧化物或鹵化磷酸鹽。白光發射可藉由摻合在藍、綠、紅色區域發射之磷光體及發藍光或UV固態裝置之磷光體來獲得。即,發藍色光LED加綠色磷光體諸如SrGa2S4:Eu2+、及紅色磷光體諸如SrSiEu2+或發UV光LED加黃色磷光體諸如Sr2P2O7:Eu2+;Mn+2及藍綠磷光體。白色LED亦可藉由將藍色LED與黃色磷光體組合來製備,然而,當使用此方法時顏色控制及顏色呈現可係不良,此係由於缺乏LED與磷光體之可調諧性。此外,習知LED磷光體技術使用具有不良顏色呈現(即,顏色呈現指數(CRI)<75)之降頻轉換材料。
在開發由具有2至50nm級尺寸粒子組成之化合物半導體(通常稱之為量子點(QD)或奈米晶體)之性質方面有受到大量關注。由於其可在眾多商業應用(諸如光學及電子裝置及其他應用,包括在眾多新穎及新興應用中之生物標記、光伏打、催化、生物成像、LED、一般空間照明及電致發光顯示器)開發之尺寸可調諧電子性質,此等材料受到商業關注。
最多研究之半導體材料係硫屬化物II-VI族材料,即ZnS、ZnSe、CdS、CdSe、CdTe;最顯著係CdSe,由於其在光譜可見區域之可調諧性。已經由「自底向上」技術研發出用於大規模生產此等材料之可複驗性方法,由此逐個原子,即,從分子至原子團至粒子,使用「濕」化學程序來製備粒子。
兩個基頻因素,均與個別半導體奈米粒度有關,係代表其獨特性質。第一者係大表面對體積比;粒子變更小時,表面原子數對內部之彼等原子數之比例增加。這導致表面性質在該材料全部性質中起重
要作用。第二因素係,對於包括半導體奈米粒子之眾多材料而言,材料之電子性質隨尺寸改變,此外,由於量子限域效應,隨著粒度減少,能帶間隙逐漸變大。此效應係所謂之「盒中電子」限域之結果,引起離散能階,與在原子及分子中觀察到之彼等相似,而不是在相應塊體半導體材料中觀察到之連續能帶。因此,對於半導體奈米粒子而言,由於物理參數,具有與第一激子轉變相比更大之能量之由電磁輻射光子吸收產生之「電子與電洞」,與其在相應宏晶材料中相比更加緊密在一起。此外,庫倫力相互作用不可忽視。這導致取決於該奈米材料之粒度及組成之狹窄帶寬發射。因此,量子點與相應宏晶材料相比具有較高動態能量及由此該第一激子轉變(能帶間隙)能量隨著粒子直徑減小而增長。
由單一半導體材料及外部有機鈍化層組成之核半導體奈米粒子趨於具有較低量子效率,由於發生位於該奈米粒子表面上會導致非輻射電子電洞復合之缺陷及懸掛鍵處的電子電洞復合。一種消除在該量子點無機表面之缺陷及懸掛鍵之方法係生長第二無機材料,該無機材料具有較寬能帶間隙及與在該核粒子表面外延之核材料之晶格失配之小晶格,以產生「核殼」粒子。核殼粒子從表面狀態分離任何在核中受限制之載波,否則其將充當非輻射性復合中心。一實例係生長在CdSe核表面之ZnS殼。
從前述討論中應瞭解,迄今為止已經廣泛研究多種QD材料併入鎘離子。然而,有眾多與使用鎘及其他重金屬諸如汞及鉛基材料相關聯之環境問題及由此需要開發無鎘奈米粒子材料。特定而言,期望產生顯示與當前鎘基材料相似之單分散性及尺寸可調諧光致發光光譜的不含鎘量子點。商業需求亦要求此等材料可大規模高產率生產,儘可能價格低廉。
早期之基於量子點之發光裝置已經藉由在光學透明LED封裝介質
(通常係聚矽氧或丙烯酸酯)中嵌入膠狀產生之量子點來製備,其隨後放置在固態LED頂部。使用量子點與使用更習知之磷光體相比潛在地具有特定重要優點,諸如調諧發射波長之能力、強吸收性質、及低散射(若量子點係單分散)。
對於量子點在下一代發光裝置之商業應用而言,量子點較佳地係併入LED封裝材料同時儘可能保留全部單分散而不大量損失量子效率。迄今為止開發之方法係有疑慮的,尤其由於當前LED封裝劑之性質。當調配成當前LED封裝劑時量子點可聚結,由此降低量子點之光學性能。此外,一旦量子點併入至LED封裝劑,氧氣可經該封裝劑遷移至量子點表面,其導致光氧化及由此降低量子產率(QY)。
一種解決氧氣遷移至QD問題之方式係將QD併入具有低透氧性之介質,諸如聚合物。併入QD之聚合物可用於製造薄膜或製造珠粒,其可併入發光裝置。然而,QD不與全部聚合物系統相容。特定而言,無鎘QD難以與相容聚合物系統匹配。例如,不相容聚合物系統可與QD反應,導致QD之QY降低。此外,在眾多聚合物系統中QD趨於聚結,引起QY降低。迄今為止,已經發現基於丙烯酸酯單體(諸如甲基丙烯酸酯)之聚合物與QD最相容。然而,大多數丙烯酸酯系統多少可透過氧氣,及出於彼原因,係較不理想。此外,丙烯酸酯聚合物經受因高溫、紫外線輻射、及氧化之降解。
當調配成當前LED封裝劑時量子點(QD)通常聚結。這降低量子點之光學性能。經由封裝劑遷移至量子點表面之氧氣可導致量子點光氧化及由此降低量子產率(QY)。多數丙烯酸酯聚合物系統至少多少可透過氧氣。此外,丙烯酸酯聚合物趨於在高溫及當暴露於紫外線輻射及氧化劑時降解。
聚矽氧烷(無機矽基聚合物)具有極佳耐熱、UV輻射及氧化性。
聚矽氧烷之一實例係聚二甲基矽氧烷(PDMS)。數個官能圖諸如丙烯酸酯及環氧基亦可併入聚矽氧烷中,提供可撓性以製造具有眾多所需性質之交聯薄膜。遺憾地,QD一般在多數聚矽氧烷中分散不良。因此,由分散在聚矽氧烷中之QD製造之薄膜及其他結構顯示較不理想之QY。
已發現特定含矽表面修飾配位體可用於製造與聚矽氧烷更相容之QD。分散在聚矽氧烷基質中之QD可用於例如發光裝置中以改變此等裝置之發射光譜。
101‧‧‧容器
102‧‧‧容器
103‧‧‧含矽聚合物
104‧‧‧基於聚合物之幾何結構
圖1係根據本發明之一實施例製造聚烷基矽氧烷修飾之QD之方法的示意圖。
圖2包含在黏性聚二甲基矽氧烷樹脂中之量子點的照片,該樹脂不具有額外表面配位體(左上小瓶)及具有表面配位體(右上小瓶)及其在氮氣下於50℃固化24小時後之相應薄膜。
圖3顯示在具有及不具有根據本發明之額外表面配位體之低黏度聚二甲基矽氧烷中之QD的分散液。
圖4顯示原始(虛線)及經C22H45-聚二甲基-矽氧烷處理(實線)之QD/交聯聚二甲基矽氧烷薄膜的光譜。
無機矽基聚合物,稱之為聚矽氧烷,由於其對熱、UV輻射及氧化性之極佳抗性通常用於高性能塗層。聚矽氧烷之一實例係聚二甲基矽氧烷(PDMS,以SYLGARD® 184獲得,DOW CORNING CORPORATION 2200 WEST SALZBURG ROAD MIDLAND MICHIGAN 48686)。數個官能團諸如丙烯酸酯及環氧基可併入聚矽氧烷,提供可撓性以製造交聯薄膜及具有其他所需性質(例如,高固態/低揮發性有機化合物、良好耐候性、極佳抗腐蝕性)。聚矽氧烷可提供傳統有機塗層之具成本效益的替代方案。遺憾地,QD一般在多數
聚矽氧烷中分散不良,由於經常在QD上使用之先前技術表面配位體一般與聚矽氧烷基質不相容。因此,由分散在聚矽氧烷中之QD製造之薄膜及其他結構顯示較不理想之QY。
已發現含矽表面修飾配位體可用於使QD與聚矽氧烷更相容。該含矽表面修飾配位體可由結構1至3表示:
(1)R-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)3
(2)R-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-R1
(3)-(Si(R2R3)-O)n-(Si(R3R4)-O)m-
其中R、R1、R2、R3、及R4係脂族基,具有或不具有末端官能團。例如,R、R1、R2、R3、及R4中一或多者可經化學結合至QD表面之官能團取代。此等官能團之實例包括硫醇、羧酸酯及胺。根據特定實施例,R至R4中之任一者可係經取代或未經取代之(-CH2)n鏈。重複單元之數量n可係例如2至30、2至20、2至10、或2至5。
適宜含矽表面修飾配位體之實例係HOOC-(CH2)10-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-C4H9及HOOC-C18H36-PDMS(獲自Gelest,Inc.,Morrisville,PA)。根據結構1至3之其他適宜含矽表面修飾配位體可藉由熟習此項技術者熟知之技術來合成。例如,接酸化聚矽氧烷與脂族醇之酯化作用可用於獲得經脂族取代之聚矽氧烷。醇,諸如CH3(CH2)n-CH2OH、第三丁醇、及異冰片醇可用於製備不同適用作表面修飾配位體之經脂族封端之聚矽氧烷。下文實例1描述藉由在經羧基封端之PDMS與月桂醇間酯化反應來製備此種配位體。
圖1闡明用於製備如本文描述之QD之基於聚矽氧烷之薄膜的程序。根據在圖1中闡明之程序,將如上文描述製備之聚矽氧烷配位體添加至容器101。該聚矽氧烷配位體通常係液體,及可直接添加至容器或在適宜溶劑中添加。該容器可係例如小瓶或燒瓶。使用惰性氣體(諸如N2)淨化該容器係有益的。隨後可將QD添加至容器102。本發明
不限於任何具體類型之QD。然而,由於其敏感性,無鎘QD從本文揭示之方法特別獲益。無鎘QD之實例包括基於In、P、Zn及S合金的QD,獲自Nanoco Technologies Ltd.(Manchester U.K.),商標為CFQD®。
熟習此項技術者應瞭解,在眾多情況下,在任何核、核/殼或核/多殼、摻雜或分級QD中關於最終無機表面原子之配位通常係不完全的,以高反應性不完全配位原子充當在該粒子表面可引起粒子聚結之「懸掛鍵」。此問題通常藉由使用保護性有機基團(「封端劑」)鈍化(封端)該「裸」表面原子來克服。該封端劑可係於其中奈米粒子已經製備的溶劑或可添加至QD在其中製備之反應混合物。此類配位體包括(但不限於)單或多配位基配位體諸如膦(三辛基膦、三苯基膦、第三丁基膦等)、氧化膦(三辛基氧化膦、三苯基氧化膦等)、烷基磷酸、烷基胺(十六胺、辛胺等)、芳基胺、吡啶、長鏈脂肪酸及噻吩。
當QD與本文揭示之含矽表面修飾配位體混合時,彼等配位體以兩個一般模式中之一者黏附於QD表面。含矽表面修飾配位體可黏附於QD表面之第一模式係藉由配位體交換,由此含矽表面修飾配位體替代數個已經存在於QD表面上之封端劑分子。此黏附模式特別有利於含表面結合物質之含矽表面修飾配位體,諸如硫醇。第二模式係藉由將含矽表面修飾配位體插入由已經存在於QD表面之封端劑分子形成的殼層。
一旦已經使用含矽表面修飾配位體修飾QD表面,QD可與含矽聚合物103混合。適宜含矽聚合物之實例包括PDMS,諸如SYLGARD184,獲自Dow Corning。亦可添加交聯劑及/或硬化劑及充分混合該混合物。該聚合物/QD混合物可隨後用於製備薄膜、珠粒、或任何其他基於聚合物之幾何結構104。形成薄膜或珠粒之方法對熟習此項技術者而言係顯而易見的。例如,可使用旋轉塗佈、液滴塗佈、蒸發塗佈、印刷、刮刀塗覆等。薄膜可在高溫(例如50℃)下固
化,或如相關技術中已知之其他方式。
如下文實例中顯示,當薄膜係經含矽配位體修飾之QD時,QD更容易分散在聚矽氧中及產出更佳及更一致之薄膜。
實例1:經脂族封端之聚二甲基矽氧烷表面配位體之合成。
將經單羧基封端之PDMS(10g,6.67mmol)添加至配有冷卻塔及攪拌棒之三頸圓底燒瓶。隨後在氮氣下,將月桂醇(1.49g,8mmol)添加至該燒瓶及將該混合物溶解於二氯甲烷(DCM,180mL)中。隨後添加二環己基碳二亞胺(DCCl)(1.376g,6.67mmol)及吡咯啶并吡啶(99.8mg,0.667mmol)及在氮氣下攪拌該混合物過夜。隨後使用50℃水浴使該混合物回流6小時,再用去離子水(3 x 250mL)洗滌。隨後使用Na2SO4乾燥該有機相及低壓下移除DCM。用甲醇洗滌如此獲得之液體及隨後再次溶於己烷,再藉由過濾移除己烷溶液中不溶部分。最後,在真空中移除己烷,獲得6.89g透明液體。
實例2:在PDMS樹脂中之QD之薄膜
具有含In、P、Zn、及S之核及具有基於ZnS之殼的發紅光核/殼QD如在美國專利第7,867,556號中所描述來製備,該專利案全部內容以引用之方式併入本文中。在不具有額外表面配位體及具有表面配位體之黏性PDMS樹脂(SYLGARD184,Dow Corning)中的QD及在氮氣下於50℃固化24小時後之其相應薄膜之視覺比較顯示,由上述酯化反應獲得之表面配位體(C22H45-PDMS)明顯地改良在PDMS樹脂中之紅色量子點之分散液及薄膜。
圖3闡明在不具有額外表面配位體之低黏度、未官能化PDMS中的紅色QD之不良非均勻分散液(A至C)、經液體官能化聚矽氧烷處理後之紅色QD之均勻分散液(D)及在低黏度未官能化PDMS中之均勻分散液(D)顯示使用官能化聚矽氧烷以改良在未官能化聚矽氧烷中之分散;(A)經乾燥及與PDMS混合之QD;(B)在添加在甲苯中之PDMS溶
液及混合前經乾燥之QD;(C)與在甲苯中之低黏度PDMS混合之在甲苯中之QD分散液(在50℃加熱不改良此分散);(D)在氮氣下於50℃加熱48至60小時以混合該QD甲苯分散液與4至6莫耳%巰基丙基甲基矽氧烷-二甲基矽氧烷共聚物及使用高真空移除甲苯之後,在巰基官能化矽氧烷中紅色QD之良好分散液;(E)當(D)經稀釋及與低黏度、未官能化PDMS混合時獲得之QD之澄清溶液。
圖4顯示使用LABSPHERE®積分球(LABSPHERE INC.231 Shaker Street NORTH SUTTON NEW HAMPSHIRE 03260)獲得之原始(虛線)及經C22H45-PDMS處理(實線)之無鎘QD/交聯PDMS(SYLGARD184)薄膜的光譜。明顯地,經C22H45-PDMS處理之無鎘QD薄膜之發射峰區域對激發峰區域之比高於原始無鎘QD薄膜之彼等,其與經處理之無鎘量子點更好地分散於PDMS之事實一致。原始(虛線)及經C22H45-PDMS處理(實線)之無鎘QD/交聯PDMS薄膜的QE分別係38及52%。
註釋:HOOCC10H21-PDMS-C4H9係經羧基封端之聚二甲基矽氧烷(HOOC-(CH2)10-Si(CH3)2-O-((Si)2-O)n-Si(CH3)2-C4H9,黏度=20cps)之略寫,獲自ABCR GmbH(76187 Karlsruhe,Germany);C18H36-PDMS係經十八烷基封端之聚二甲基矽氧烷(ABCR)之略寫;C22H45-PDMS係獲自HOOCC10H21-PDMS-C4H9與月桂醇之酯化反應之配位體的略寫及MPMS-PDMS係4至6莫耳%巰基丙基甲基矽氧烷-二甲基矽氧烷共聚物之略寫(獲自ABCR GmbH)。QD/PDMS薄膜通常係在氮氣氛圍中於50℃下固化24小時。
本文揭示之實施例提供以下優點:其提供製備用於顯示器及照明應用中具有可比較性能及新穎性質之在聚矽氧油中之QD/聚合物薄膜或QD分散液之替代途徑;QD聚矽氧烷薄膜係如使用甲基丙烯酸月桂酯(LMA)作為單體及三羥甲基丙烷三甲基丙烯酸酯(TMPTM)作為交聯劑製備的薄膜般可撓性及該聚矽氧烷薄膜之基質在對抗熱、UV、腐蝕及氧化時更穩定;及存在更少環境及健康相關問題,由於聚矽氧烷與獲自(甲基)丙烯酸酯及聚胺基甲酸酯之傳統聚合物材料相比具有高固體含量、低VOC及低毒性。
儘管已經顯示及描述特定實施例,但應瞭解上文討論並非意在將本發明限制於此等實施例。熟習此項技術者應瞭解可在不脫離由隨後申請專利範圍照字面及等效覆蓋之本發明範圍下進行各種變化及改良。
101‧‧‧容器
102‧‧‧容器
103‧‧‧含矽聚合物
104‧‧‧基於聚合物之幾何結構
Claims (12)
- 一種組合物,其包括:至少一包括半導體材料之量子點;位於該量子點表面上之表面配位體,該表面配位體具有包含R'-(CH2)10-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-C4H9、R'-C10H21-PDMS-C4H9、R'-C18H36-PDMS及C22H45-PDMS中任一者之化學式,其中,PDMS係聚二甲基矽氧烷,n係整數,及R'係羧酸、硫醇或胺。
- 如請求項1之組合物,其進一步包括聚矽氧聚合物。
- 如請求項2之組合物,其中該聚矽氧聚合物係聚矽氧烷。
- 如請求項1之組合物,其中該量子點係無鎘量子點。
- 如請求項1之組合物,其中該量子點包括選自由下列組成之群之封端劑:膦、氧化膦、烷基磷酸、烷基胺、芳基胺、吡啶、長鏈脂肪酸及噻吩。
- 一種照明裝置,其包括封裝在組合物中之發光二極體(LED),該組合物包括:至少一包括半導體材料之量子點;位於該量子點表面上之表面配位體,該表面配位體具有包含R'-(CH2)10-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-C4H9、R'-C10H21-PDMS-C4H9、R'-C18H36-PDMS及C22H45-PDMS中任一者之化學式,其中,PDMS係聚二甲基矽氧烷,n係整數,及 R'係羧酸、硫醇或胺。
- 一種聚合物薄膜,其包括具有組合物分散於其中之聚矽氧聚合物,該組合物包括:至少一包括半導體材料之量子點;位於該量子點表面上之表面配位體,該表面配位體具有包含R'-(CH2)10-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-C4H9、R'-C10H21-PDMS-C4H9、R'-C18H36-PDMS及C22H45-PDMS中任一者之化學式,其中,PDMS係聚二甲基矽氧烷,n係整數,及R'係羧酸、硫醇或胺。
- 如請求項7之聚合物薄膜,其中該聚矽氧聚合物包括聚矽氧烷。
- 一種聚合物珠粒,其包括具有組合物分散於其中之聚矽氧聚合物,該組合物包括:至少一包括半導體材料之量子點;位於該量子點表面上之表面配位體,該表面配位體具有包含R'-(CH2)10-Si(CH3)2-O-(Si(CH3)2-O)n-Si(CH3)2-C4H9、R'-C10H21-PDMS-C4H9、R'-C18H36-PDMS及C22H45-PDMS中任一者之化學式,其中,PDMS係聚二甲基矽氧烷,n係整數,及R'係羧酸、硫醇或胺。
- 如請求項9之聚合物珠粒,其中該聚矽氧聚合物包括聚矽氧烷。
- 如請求項9之聚合物珠粒,其中該聚矽氧聚合物基本上由聚矽氧烷組成。
- 如請求項11之聚合物珠粒,其中該聚矽氧烷係聚二甲基矽氧烷。
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