TWI585495B - 矽基液晶之單元級液晶組裝製造方法 - Google Patents
矽基液晶之單元級液晶組裝製造方法 Download PDFInfo
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- TWI585495B TWI585495B TW104143705A TW104143705A TWI585495B TW I585495 B TWI585495 B TW I585495B TW 104143705 A TW104143705 A TW 104143705A TW 104143705 A TW104143705 A TW 104143705A TW I585495 B TWI585495 B TW I585495B
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Description
本發明係關於液晶組裝製造方法,尤指矽基液晶之單元級液晶組裝製造方法。
第1圖係習知技術之外部電性連接透明導電玻璃(ITO)及真空注入液晶之液晶組裝製造方法流程圖。如第1圖所示,在習知技術中液晶組裝製造方法為先將基板洗淨101,形成液晶配向層102後塗佈框膠103並貼合之104。之後切割矽晶圓及透明導電玻璃基板並予以切割分離(cell singulation)105,真空注入液晶106後封口107,接著黏晶108、焊線109及封裝110,最後外部電性連接透明導電111。第2圖係習知技術另一態樣,為內部電性連接透明導電玻璃及滴入式注入液晶(One Drop Fill,ODF)之面板製造方法流程圖。係先將基板洗淨201,形成液晶配向層202後塗佈框膠203,內部電性連接透明導電玻璃204後滴入式注入液晶(One Drop Fill,ODF)205並貼合之206,接著切割矽晶圓及透明導電玻璃基板並予以切割分離207,最後黏晶208、焊線209並封裝210。
然而習知技術未能於六吋、八吋及十二吋晶圓製造過程中適用同一製程或相同設備,在使用斜向蒸鍍法(SiOx/SiO2 process)形成液晶配向層時,越大尺寸規格的晶圓即需要越大的真空蒸鍍裝置(vacuum deposition system),並因而增加形成液晶配向層之時間;且於使用滴入式注入液晶(ODF)時,由於各個晶片之製程狀態不盡相同,越大尺寸規格的晶圓製程將更形複雜;再者,習知技術必須對整片晶圓進行加工處理,未能於製造過程前期中及早篩選出良裸晶片並排除劣等晶片進行後續程序,以致製造成本大幅增加;除此之外,於習知技術中焊墊(bond pad)僅能位於兩個最後劃線裂片區域(scribe and break area)其中之一個之上;更甚之,習知技術之製程循環週期時間過於漫長並因而延緩開發時間(development time);液晶顯示模組(LCM)之電路板也無法先於液晶組裝流程而製造。
有鑑於此,本發明提供一種矽基液晶之單元級液晶組裝製造方法,於本發明中主要元件為晶片之承載及處理裝置,其中該載板之使用近似於扇出型晶圓級封裝技術(wafer level fan-out process),為重要技術特徵之一。該載板具有個別液晶矽基元件載體序列,得承載不同數量之晶片,並確保各個晶片得位於準確的方位上進行液晶組裝程序。在每一次液晶組裝程序完成後,全部載體將被清洗以便製造下一批次之
液晶矽基元件。於本發明部分實施例中,載板上亦可具有旁側支架(arm)或後側真空塞孔(vacuum jack)支撐晶片。
本發明之其中一種矽基液晶之單元級液晶組裝製造方法包括以下步驟:先切割矽晶圓及透明導電玻璃基板並予以切割分離,再揀選適當之切割後所得之矽晶片(die)及透明導電玻璃晶片分別置入不同載板,洗淨後於其上各自形成液晶配向層,接著塗佈框膠後貼合矽晶片及透明導電玻璃晶片再固化框膠,之後自該載板中揀選出適當之液晶矽基元件(cell),真空注入液晶後封口,然後黏晶並焊線後封裝,最後外部電性連接透明導電玻璃。
此外,於本發明所揭露之另一種矽基液晶之單元級液晶組裝製造方法中,包括以下步驟:先切割矽晶圓及透明導電玻璃基板並予以切割分離,再揀選適當之切割後所得之矽晶片及透明導電玻璃晶片分別置入不同載板,洗淨載板後於其上分別形成液晶配向層,塗佈框膠後內部電性連接透明導電玻璃,滴入液晶(ODF)後貼合矽晶片及透明導電玻璃晶片,最後固化框膠並黏晶、焊線及封裝。
使用本發明之方法組裝液晶顯示模組可不受晶圓規格大小之限制,相同之製程及設備可同時適用於六吋、八吋及十二吋之晶圓,在使用斜向蒸鍍法(SiOx/SiO2 process)形成液晶配向層時即可使用相同之真空蒸鍍裝置(vacuum deposition system),也因切割後之晶片體積遠小於晶圓,所需
之真空室容積較小,形成液晶配向層之所需時間亦相形減少;且於本發明製造過程前階段即得早期篩選出適合製造液晶元件之晶片,避免於劣質晶片上製造加工而浪費生產成本及時間;又因每個切割後之晶片後續製造情形及參數皆一致,滴入式注入液晶(ODF)時不會發生因各個晶片之製造狀態迥異而使得製程變得更為複雜的問題出現;除此之外,若使用此單元級液晶組裝製造方法,焊墊可置於晶片四個方位中任一方向,而非限於僅得置於兩個最後劃線裂片區域(scribe and break area)其中之一個之上;本發明並得減少製程循環週期時間進而加快開發時間(development time);液晶顯示模組(LCM)之電路板亦可先於液晶組裝流程而製造。
在參閱圖式及隨後描述之實施方式後,此技術領域具有通常知識者便可瞭解本發明之其他目的,以及本發明之技術手段及實施態樣。
以上之概述與接下來之詳細說明皆為示範性質,是為了進一步說明本發明之申請專利範圍。而有關本發明之其他目的與優點,將在後續之說明與圖示加以闡述。
300‧‧‧矽基液晶之單元級液晶組裝製造方法
301‧‧‧切割分離步驟
302‧‧‧揀選晶片置入載板步驟
303‧‧‧清洗載板步驟
304‧‧‧設置液晶配向層步驟
305‧‧‧塗佈框膠步驟
306‧‧‧貼合步驟
307‧‧‧固化框膠步驟
308‧‧‧自載板揀選液晶矽基元件步驟
309‧‧‧注入液晶步驟
310‧‧‧封口步驟
311‧‧‧黏晶步驟
312‧‧‧焊線步驟
313‧‧‧封裝步驟
314‧‧‧外部電性連接透明導電玻璃步驟
第1圖為習知技術的外部電性連接透明導電玻璃(ITO)及真空注入液晶之液晶組裝製造方法流程圖。
第2圖為習知技術關於內部電性連接透明導電玻璃及滴入式注入液晶(One Drop Fill,ODF)之面板製造方法流
程圖。
第3圖為本發明之矽基液晶之單元級液晶組裝製造方法第一實施例之流程圖。
第4圖為本發明之矽基液晶之單元級液晶組裝製造方法第二實施例之流程圖。
以下將透過實施例來解釋本發明內容。然而,本發明的實施例並非用以限制本發明須在如實施例所述之任何環境、應用或方式方能實施。因此,關於實施例之說明僅為闡釋本發明之目的,而非用以直接限制本發明。需說明者,以下實施例及圖示中,與本發明非直接相關或為該領域具有通常知識者可以理解如何實施之步驟已省略而未繪示。且熟知此技藝者當可瞭解的是,本創作所揭露之液晶組裝方法,當可應用於各種不同場合。
請參看第3圖,其係本發明之矽基液晶之單元級液晶組裝製造方法其中一實施例之流程圖,包括以下步驟:先切割矽晶圓及透明導電玻璃基板而形成單元級尺寸之晶片並予以切割分離301,再揀選適當之切割後所得之矽晶片(die)及透明導電玻璃晶片分別置入不同載板302,洗淨載板後303於其上分別形成液晶配向層304,塗佈框膠305後貼合矽晶片及透明導電玻璃晶片306,固化框膠307並自該載板中揀選出合適之液晶矽基元件(cell)308,真空注入液晶309後封口310,之
後黏晶311並焊線312後封裝313,最後外部電性連接透明導電玻璃314。
請參看第4圖,此係本發明之矽基液晶之單元級液晶組裝製造方法另一實施例之流程圖,包括以下步驟:先切割矽晶圓及透明導電玻璃基板而形成單元級尺寸之晶片並予以切割分離401,再揀選適當之切割後所得之矽晶片(die)及透明導電玻璃晶片分別置入不同載板402,洗淨載板403後於其上分別形成液晶配向層404,塗佈框膠405後內部電性連接透明導電玻璃406,滴入式注入液晶(One Drop Fill,ODF)407後貼合矽晶片及透明導電玻璃晶片408,最後固化框膠409並黏晶410、焊線411及封裝412。
除此之外,由於液晶顯示器的品質主要取決於液晶配向之優劣,故本發明之形成液晶配向層之步驟可採用斜向蒸著法(SiOx/SiO2 process),在高真空室中將二氧化矽(Silicon Dioxide,SiO2)或氧化矽(Silicon Monoxide,SiO)與矽氧化合物(SiOx)等無機材料從特定的角度熱蒸鍍(thermal evaporation)在基板上以產生SiO長柱狀體,藉控制SiO長柱狀體傾斜角度及密度達到液晶配向排列之目的。此方法之優點為可精準控制液晶傾斜角度,提升配向可靠度。
本發明之形成液晶配向層之步驟亦可採用摩擦定向法(PI process),以絨布進行高速滾輪旋轉,以接觸式順向機械摩擦塗佈聚亞醯胺之玻璃表面,使聚亞醯胺主鏈因延
伸而順向排列進而使液晶配向排列,此方法之優點為操作時間極短且得在常溫下操作,並具有優異量產之特性。
本發明之形成液晶配向層之步驟亦可適用光配向法(Photo-Alignment),先形成含有具光反應性基團之光配向聚合物之配向層於液晶層下方,接著利用紫外光(UV)依特定方向照射配向層以引發光學異方性,是以引發光配向聚合物之主鏈排列於一預定方向上,從而該光學性配向之配向層再影響位於其上液晶層內之液晶配向。該光配向聚合物可為環烯烴,其藉由環烯烴系主鏈結構可呈現優異的光反應性、光配向性及配向速率,同時呈現較佳的熱安定性,因而適於做為一光配向聚合物。以光配向法形成液晶配向層不需配向層摩擦定向(rubbing)製程具有熱安定性和配向穩定性等優點。
本發明之形成液晶配向層步驟亦可採用噴墨印刷法(Inkjet Printing process),在基板上以噴墨印刷方式塗佈上至少一層聚合物溶液,形成一既定厚度之液晶配向層。由於噴墨印刷法係採用非接觸方式形成配向層,有效提升液晶配向膜表面的平滑性使畫面顯示更為均質,且得充分有效的使用材料。要有高的光學對比度,就要防止入射光在面板框邊緣透明導電玻璃基板表面之光散射和反射。光吸收光罩材料通常添加在面板框邊緣來吸收和防止這種光散射和反射。因此,噴墨印刷法可用來製造位於環繞面板框邊緣透明導電玻璃基板表面之光罩。又因噴墨印刷法得藉軟體控制將所需之圖形
及光阻塗佈至基板上,故不需額外增置昂貴光罩,達到降低生產成本的目的。此外,若相關設備機台上有兩個以上的噴嘴,則可同時將所需之複數相異光阻塗佈印刷於基板上,藉此縮短製造時間提高生產效率。
惟若以摩擦定向法(PI process)形成配向層,難免產生灰塵以及顆粒狀污染物,需額外購置清潔設備,且每次僅能加工單一基板,導致產率不盡理想;又斜向蒸著法(SiOx/SiO2 process)僅得實施於小型基板(通常為小於10英吋)上,所得出的液晶配向角度亦受限於二氧化矽蒸鍍角度,此外每次僅能加工於相對少量之基板(一般而言不超過6個基板),無法進行大量批次製程。
故本發明亦可採用另一形成液晶配向層之方法,係先將基板放置在真空室中,淨化該真空室後填充惰性氣體,重複數次該真空室的淨化與填充程序以排除真空室中的水蒸氣。再者,該惰性氣體可被事先預熱,使得基板在淨化與再填充步驟中被加溫,該配向層接著藉由使用例如矽烷材料的氣相沉積法直接形成於基板上,或形成一附著於透明導電玻璃之中間層,以讓其他無法附著於透明導電玻璃的矽烷材料附著於其上。其中矽烷材料可為如全氟辛基三乙氧基矽烷、三甲基矽烷基二乙胺、十八烷基三乙氧基矽烷以及三氯矽烷。再者,氣相沉積法亦可結合電漿法於本發明中形成液晶配向層,在氣相沉積法中尚未讓基板接觸到可能污染表面的氣體前,提
供基板之電漿清潔步驟,或是電漿得輔助氣相沉積法提供液晶配向層塗佈材料以及製造被塗佈的材料,並產生刺激化學物質,與基板產生更活潑的反應。使用此方法得以輕易達成批次製作複數基板之目的,且得在高產率及低成本之前提下製造非常薄的有機液晶配向層。
熟知本發明技術之人應清楚了解本發明不受限於上開說明之實施方式之細節,本發明得以其他特定形式實施而不脫離本發明之基本屬性,實施方式僅係說明而非限制本發明,本發明以專利申請範圍為依據,而非以上開說明為依據,申請專利範圍之意義及均等範圍中之所有變形均屬本發明之範圍。
300‧‧‧矽基液晶之單元級液晶組裝製造方法
301‧‧‧切割分離步驟
302‧‧‧揀選晶片置入載板步驟
303‧‧‧清洗步驟
304‧‧‧設置液晶配向層步驟
305‧‧‧塗佈框膠步驟
306‧‧‧貼合步驟
307‧‧‧固化框膠步驟
308‧‧‧自載板揀選液晶矽基元件步驟
309‧‧‧真空注入液晶步驟
310‧‧‧封口步驟
311‧‧‧黏晶步驟
312‧‧‧焊線步驟
313‧‧‧封裝步驟
314‧‧‧外部電性連接透明導電玻璃步驟
Claims (10)
- 一種矽基液晶之單元級液晶組裝製造方法,包括如下步驟:先切割矽晶圓及透明導電玻璃基板而形成單元級尺寸之晶片;揀選晶片並置入載板;洗淨載板;形成液晶配向層;塗佈框膠並貼合晶片後固化框膠;自載板中揀選液晶矽基元件;注入液晶後封口;黏晶並焊線後封裝;以及外部電性連接透明導電玻璃。
- 根據申請專利範圍第1項所述之矽基液晶之單元級液晶組裝製造方法,其中該形成液晶配向層步驟可使用摩擦定向法或斜向蒸鍍法或光配向法或噴墨印刷法。
- 根據申請專利範圍第1項所述之矽基液晶之單元級液晶組裝製造方法,其中該形成液晶配向層步驟可為在真空室中放置一基板,淨化該真空室後利用氣相沉積法沉積液晶配向層。
- 根據申請專利範圍第3項所述之矽基液晶之單元級液晶組裝製造方法,其中該利用氣相沉積法沉積配向層係包括利用電漿輔助氣相沉積法沉積該液晶配向層。
- 根據申請專利範圍第2項所述之矽基液晶之單元級液晶組裝製造方法,其中噴墨印刷法可用來製造位於環繞面板框邊緣透明導電玻璃基板表面之光罩。
- 一種單元級矽基液晶之單元級液晶組裝製造方法,包括如下步驟:先切割矽晶圓及透明導電玻璃基板而形成單元級尺寸之晶片;揀選晶片並置入載板;洗淨載板;形成液晶配向層;塗佈框膠;內部電性連接透明導電玻璃;注入液晶;貼合晶片後固化框膠;以及黏晶並焊線後封裝。
- 根據申請專利範圍第6項所述之矽基液晶之單元級液晶組裝製造方法,其中該形成液晶配向層步驟可使用摩擦定向法或斜向蒸鍍法或光配向法或噴墨印刷法。
- 根據申請專利範圍第6項所述之矽基液晶之單元級液晶組裝製造方法,其中該形成液晶配向層步驟可為在真空室中放置一基板,淨化該真空室後利用氣相沉積法沉積液晶配向層。
- 根據申請專利範圍第8項所述之矽基液晶之單元級液晶組裝製造方法,其中該利用氣相沉積法沉積配向層係包括利用電漿輔助氣相沉積法沉積該液晶配向層。
- 根據申請專利範圍第7項所述之矽基液晶之單元級液晶組裝製造方法,其中噴墨印刷法可用來製造位於環繞面板框邊緣透明導電玻璃基板表面之光罩。
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TW201026784A (en) * | 2009-01-08 | 2010-07-16 | Sharp Kk | Composition for forming liquid crystal alignment film and liquid crystal display device |
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TW201026784A (en) * | 2009-01-08 | 2010-07-16 | Sharp Kk | Composition for forming liquid crystal alignment film and liquid crystal display device |
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