TWI575551B - 蝕刻裝置及方法 - Google Patents

蝕刻裝置及方法 Download PDF

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Publication number
TWI575551B
TWI575551B TW101142192A TW101142192A TWI575551B TW I575551 B TWI575551 B TW I575551B TW 101142192 A TW101142192 A TW 101142192A TW 101142192 A TW101142192 A TW 101142192A TW I575551 B TWI575551 B TW I575551B
Authority
TW
Taiwan
Prior art keywords
etching
substrate
camera
topography
edge
Prior art date
Application number
TW101142192A
Other languages
English (en)
Chinese (zh)
Other versions
TW201331977A (zh
Inventor
奧利薇Ｊ 安塞爾
Original Assignee
Ｓｐｔｓ科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｓｐｔｓ科技公司 filed Critical Ｓｐｔｓ科技公司
Publication of TW201331977A publication Critical patent/TW201331977A/zh
Application granted granted Critical
Publication of TWI575551B publication Critical patent/TWI575551B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
TW101142192A 2011-11-14 2012-11-13 蝕刻裝置及方法 TWI575551B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Publications (2)

Publication Number Publication Date
TW201331977A TW201331977A (zh) 2013-08-01
TWI575551B true TWI575551B (zh) 2017-03-21

Family

ID=45444084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101142192A TWI575551B (zh) 2011-11-14 2012-11-13 蝕刻裝置及方法

Country Status (6)

Country Link
EP (1) EP2592646B1 (https=)
JP (2) JP6301578B2 (https=)
KR (3) KR101986845B1 (https=)
CN (1) CN103107113B (https=)
GB (1) GB201119598D0 (https=)
TW (1) TWI575551B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
NL2019007A (en) * 2016-06-13 2017-12-20 Asml Netherlands Bv Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW464967B (en) * 1999-09-14 2001-11-21 Tokyo Electron Ltd Plasma etching termination detecting method
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US7481944B2 (en) * 2003-06-05 2009-01-27 Tokyo Electron Limited Etch amount detection method, etching method, and etching system
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
TW464967B (en) * 1999-09-14 2001-11-21 Tokyo Electron Ltd Plasma etching termination detecting method
US7481944B2 (en) * 2003-06-05 2009-01-27 Tokyo Electron Limited Etch amount detection method, etching method, and etching system
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Also Published As

Publication number Publication date
TW201331977A (zh) 2013-08-01
CN103107113B (zh) 2017-03-01
KR20190044046A (ko) 2019-04-29
JP2013106050A (ja) 2013-05-30
JP2018014538A (ja) 2018-01-25
KR101986845B1 (ko) 2019-06-07
EP2592646A2 (en) 2013-05-15
EP2592646B1 (en) 2020-09-23
KR102287783B1 (ko) 2021-08-06
KR20200001587A (ko) 2020-01-06
JP6301578B2 (ja) 2018-03-28
EP2592646A3 (en) 2017-05-24
GB201119598D0 (en) 2011-12-28
CN103107113A (zh) 2013-05-15
KR20130054187A (ko) 2013-05-24

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