CN103107113B - 刻蚀装置和方法 - Google Patents

刻蚀装置和方法 Download PDF

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Publication number
CN103107113B
CN103107113B CN201210459115.8A CN201210459115A CN103107113B CN 103107113 B CN103107113 B CN 103107113B CN 201210459115 A CN201210459115 A CN 201210459115A CN 103107113 B CN103107113 B CN 103107113B
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China
Prior art keywords
etching
substrate
face
light
edge
Prior art date
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CN201210459115.8A
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English (en)
Chinese (zh)
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CN103107113A (zh
Inventor
奥立佛·J·安塞尔
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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Publication of CN103107113A publication Critical patent/CN103107113A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Weting (AREA)
CN201210459115.8A 2011-11-14 2012-11-14 刻蚀装置和方法 Active CN103107113B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1119598.9 2011-11-14
GBGB1119598.9A GB201119598D0 (en) 2011-11-14 2011-11-14 Etching apparatus and methods

Publications (2)

Publication Number Publication Date
CN103107113A CN103107113A (zh) 2013-05-15
CN103107113B true CN103107113B (zh) 2017-03-01

Family

ID=45444084

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210459115.8A Active CN103107113B (zh) 2011-11-14 2012-11-14 刻蚀装置和方法

Country Status (6)

Country Link
EP (1) EP2592646B1 (https=)
JP (2) JP6301578B2 (https=)
KR (3) KR101986845B1 (https=)
CN (1) CN103107113B (https=)
GB (1) GB201119598D0 (https=)
TW (1) TWI575551B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134618B (zh) * 2014-06-12 2017-12-08 京东方科技集团股份有限公司 一种关键图形的尺寸检测装置及尺寸检测方法
NL2019007A (en) * 2016-06-13 2017-12-20 Asml Netherlands Bv Methods and apparatus for determining the position of a target structure on a substrate, methods and apparatus for determining the position of a substrate
CN109148316A (zh) * 2018-09-07 2019-01-04 北京智芯微电子科技有限公司 用于精确判定等离子体刻蚀机刻蚀芯片终点的监测方法
GB201916079D0 (en) * 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6541388B1 (en) * 1999-09-14 2003-04-01 Tokyo Electron Limited Plasma etching termination detecting method
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
CN1574243A (zh) * 2003-06-05 2005-02-02 东京毅力科创株式会社 蚀刻量检测方法、蚀刻方法和蚀刻装置
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028233A (ja) * 1983-07-27 1985-02-13 Hitachi Ltd エツチングのモニタ装置
JPS60124823A (ja) * 1983-12-09 1985-07-03 Hitachi Ltd エツチング・モニタ方法
JPS62171127A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd エツチングの終点検出方法
JP3044728B2 (ja) * 1989-12-26 2000-05-22 ソニー株式会社 埋め込みプラグの製造方法
JP2001319922A (ja) * 2000-05-10 2001-11-16 Nec Corp 異常放電検出装置および検出方法
JP2001332534A (ja) * 2000-05-25 2001-11-30 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP2003004644A (ja) * 2001-06-19 2003-01-08 Toshiba Corp 表面評価方法、表面処理方法およびその装置
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP4278497B2 (ja) * 2003-11-26 2009-06-17 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
JP2010010242A (ja) * 2008-06-25 2010-01-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670200B2 (en) * 1998-05-21 2003-12-30 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6541388B1 (en) * 1999-09-14 2003-04-01 Tokyo Electron Limited Plasma etching termination detecting method
CN1574243A (zh) * 2003-06-05 2005-02-02 东京毅力科创株式会社 蚀刻量检测方法、蚀刻方法和蚀刻装置
CN101459049A (zh) * 2007-12-11 2009-06-17 中芯国际集成电路制造(上海)有限公司 一种用于探测刻蚀终点的装置及方法

Also Published As

Publication number Publication date
TW201331977A (zh) 2013-08-01
KR20190044046A (ko) 2019-04-29
JP2013106050A (ja) 2013-05-30
JP2018014538A (ja) 2018-01-25
KR101986845B1 (ko) 2019-06-07
TWI575551B (zh) 2017-03-21
EP2592646A2 (en) 2013-05-15
EP2592646B1 (en) 2020-09-23
KR102287783B1 (ko) 2021-08-06
KR20200001587A (ko) 2020-01-06
JP6301578B2 (ja) 2018-03-28
EP2592646A3 (en) 2017-05-24
GB201119598D0 (en) 2011-12-28
CN103107113A (zh) 2013-05-15
KR20130054187A (ko) 2013-05-24

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