TWI570264B - Gas - phase growth device and gas - phase growth method - Google Patents

Gas - phase growth device and gas - phase growth method Download PDF

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Publication number
TWI570264B
TWI570264B TW103120707A TW103120707A TWI570264B TW I570264 B TWI570264 B TW I570264B TW 103120707 A TW103120707 A TW 103120707A TW 103120707 A TW103120707 A TW 103120707A TW I570264 B TWI570264 B TW I570264B
Authority
TW
Taiwan
Prior art keywords
gas
path
gas supply
organic metal
supply path
Prior art date
Application number
TW103120707A
Other languages
English (en)
Chinese (zh)
Other versions
TW201508086A (zh
Inventor
山田拓未
佐藤裕輔
Original Assignee
紐富來科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 紐富來科技股份有限公司 filed Critical 紐富來科技股份有限公司
Publication of TW201508086A publication Critical patent/TW201508086A/zh
Application granted granted Critical
Publication of TWI570264B publication Critical patent/TWI570264B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW103120707A 2013-07-08 2014-06-16 Gas - phase growth device and gas - phase growth method TWI570264B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013142616A JP6109657B2 (ja) 2013-07-08 2013-07-08 気相成長装置および気相成長方法

Publications (2)

Publication Number Publication Date
TW201508086A TW201508086A (zh) 2015-03-01
TWI570264B true TWI570264B (zh) 2017-02-11

Family

ID=52131950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120707A TWI570264B (zh) 2013-07-08 2014-06-16 Gas - phase growth device and gas - phase growth method

Country Status (4)

Country Link
US (1) US9546435B2 (https=)
JP (1) JP6109657B2 (https=)
KR (1) KR101598913B1 (https=)
TW (1) TWI570264B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
JP2018204433A (ja) * 2015-09-25 2018-12-27 株式会社日立製作所 内燃機関
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
US9964780B2 (en) * 2016-04-14 2018-05-08 Johnson & Johnson Vision Care, Inc. Methods and apparatus to enhance oxygen concentrations for advanced ophthalmic devices
KR102710128B1 (ko) * 2020-06-30 2024-09-27 주식회사 케이씨텍 초임계 유체 배기 시스템 및 그 방법
US20250075369A1 (en) * 2023-08-28 2025-03-06 Applied Materials, Inc. Method and apparatus for gas delivery in a processing chamber

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313731A (ja) * 2001-04-10 2002-10-25 Nippon Sanso Corp 有機金属気相成長装置
JP2005315634A (ja) * 2004-04-27 2005-11-10 Tamagawa Seiki Co Ltd 絶対位置検出方法及び装置
JP2005331287A (ja) * 2004-05-18 2005-12-02 Tamagawa Seiki Co Ltd フィールドバス対応型レゾルバ装置
TW200936802A (en) * 2007-11-29 2009-09-01 Nuflare Technology Inc Vapor phase growth apparatus and vapor phase growth method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472719A (ja) * 1990-07-13 1992-03-06 Matsushita Electron Corp 半導体気相成長装置
JP3124376B2 (ja) * 1992-06-17 2001-01-15 株式会社東芝 化合物半導体の気相成長装置
US7163197B2 (en) 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
JP2002367911A (ja) * 2001-06-07 2002-12-20 Sumitomo Chem Co Ltd 気相成長半導体製造装置及び方法
JP4399517B2 (ja) 2004-01-05 2010-01-20 株式会社堀場製作所 成膜装置と成膜方法
KR20060112056A (ko) * 2005-04-26 2006-10-31 주식회사 리 첼 유기금속 화학기상 증착장치를 이용한 아연산화물 박막형성방법
JP5634216B2 (ja) * 2010-10-29 2014-12-03 株式会社アルバック ガス供給システム
JP5626113B2 (ja) * 2011-05-18 2014-11-19 株式会社Ihi ガス分岐装置およびガス分岐方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313731A (ja) * 2001-04-10 2002-10-25 Nippon Sanso Corp 有機金属気相成長装置
JP2005315634A (ja) * 2004-04-27 2005-11-10 Tamagawa Seiki Co Ltd 絶対位置検出方法及び装置
JP2005331287A (ja) * 2004-05-18 2005-12-02 Tamagawa Seiki Co Ltd フィールドバス対応型レゾルバ装置
TW200936802A (en) * 2007-11-29 2009-09-01 Nuflare Technology Inc Vapor phase growth apparatus and vapor phase growth method

Also Published As

Publication number Publication date
KR101598913B1 (ko) 2016-03-02
US9546435B2 (en) 2017-01-17
JP6109657B2 (ja) 2017-04-05
KR20150006355A (ko) 2015-01-16
JP2015015429A (ja) 2015-01-22
US20150007766A1 (en) 2015-01-08
TW201508086A (zh) 2015-03-01

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