JP6109657B2 - 気相成長装置および気相成長方法 - Google Patents

気相成長装置および気相成長方法 Download PDF

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Publication number
JP6109657B2
JP6109657B2 JP2013142616A JP2013142616A JP6109657B2 JP 6109657 B2 JP6109657 B2 JP 6109657B2 JP 2013142616 A JP2013142616 A JP 2013142616A JP 2013142616 A JP2013142616 A JP 2013142616A JP 6109657 B2 JP6109657 B2 JP 6109657B2
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Prior art keywords
gas
gas supply
path
supply path
mass flow
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JP2013142616A
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English (en)
Japanese (ja)
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JP2015015429A5 (https=
JP2015015429A (ja
Inventor
拓未 山田
拓未 山田
佐藤　裕輔
裕輔 佐藤
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Nuflare Technology Inc
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Nuflare Technology Inc
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Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to JP2013142616A priority Critical patent/JP6109657B2/ja
Priority to TW103120707A priority patent/TWI570264B/zh
Priority to KR1020140081746A priority patent/KR101598913B1/ko
Priority to US14/322,127 priority patent/US9546435B2/en
Publication of JP2015015429A publication Critical patent/JP2015015429A/ja
Publication of JP2015015429A5 publication Critical patent/JP2015015429A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2013142616A 2013-07-08 2013-07-08 気相成長装置および気相成長方法 Active JP6109657B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013142616A JP6109657B2 (ja) 2013-07-08 2013-07-08 気相成長装置および気相成長方法
TW103120707A TWI570264B (zh) 2013-07-08 2014-06-16 Gas - phase growth device and gas - phase growth method
KR1020140081746A KR101598913B1 (ko) 2013-07-08 2014-07-01 기상 성장 장치 및 기상 성장 방법
US14/322,127 US9546435B2 (en) 2013-07-08 2014-07-02 Vapor phase growth apparatus and vapor phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013142616A JP6109657B2 (ja) 2013-07-08 2013-07-08 気相成長装置および気相成長方法

Publications (3)

Publication Number Publication Date
JP2015015429A JP2015015429A (ja) 2015-01-22
JP2015015429A5 JP2015015429A5 (https=) 2016-07-21
JP6109657B2 true JP6109657B2 (ja) 2017-04-05

Family

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Family Applications (1)

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JP2013142616A Active JP6109657B2 (ja) 2013-07-08 2013-07-08 気相成長装置および気相成長方法

Country Status (4)

Country Link
US (1) US9546435B2 (https=)
JP (1) JP6109657B2 (https=)
KR (1) KR101598913B1 (https=)
TW (1) TWI570264B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
JP2018204433A (ja) * 2015-09-25 2018-12-27 株式会社日立製作所 内燃機関
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
US9964780B2 (en) * 2016-04-14 2018-05-08 Johnson & Johnson Vision Care, Inc. Methods and apparatus to enhance oxygen concentrations for advanced ophthalmic devices
KR102710128B1 (ko) * 2020-06-30 2024-09-27 주식회사 케이씨텍 초임계 유체 배기 시스템 및 그 방법
US20250075369A1 (en) * 2023-08-28 2025-03-06 Applied Materials, Inc. Method and apparatus for gas delivery in a processing chamber

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0472719A (ja) * 1990-07-13 1992-03-06 Matsushita Electron Corp 半導体気相成長装置
JP3124376B2 (ja) * 1992-06-17 2001-01-15 株式会社東芝 化合物半導体の気相成長装置
US7163197B2 (en) 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
JP2002313731A (ja) * 2001-04-10 2002-10-25 Nippon Sanso Corp 有機金属気相成長装置
JP2002367911A (ja) * 2001-06-07 2002-12-20 Sumitomo Chem Co Ltd 気相成長半導体製造装置及び方法
JP4399517B2 (ja) 2004-01-05 2010-01-20 株式会社堀場製作所 成膜装置と成膜方法
JP4709963B2 (ja) * 2004-04-27 2011-06-29 多摩川精機株式会社 絶対位置検出方法及び装置
JP4555913B2 (ja) * 2004-05-18 2010-10-06 多摩川精機株式会社 フィールドバス対応型レゾルバ装置
KR20060112056A (ko) * 2005-04-26 2006-10-31 주식회사 리 첼 유기금속 화학기상 증착장치를 이용한 아연산화물 박막형성방법
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP5634216B2 (ja) * 2010-10-29 2014-12-03 株式会社アルバック ガス供給システム
JP5626113B2 (ja) * 2011-05-18 2014-11-19 株式会社Ihi ガス分岐装置およびガス分岐方法

Also Published As

Publication number Publication date
KR101598913B1 (ko) 2016-03-02
US9546435B2 (en) 2017-01-17
TWI570264B (zh) 2017-02-11
KR20150006355A (ko) 2015-01-16
JP2015015429A (ja) 2015-01-22
US20150007766A1 (en) 2015-01-08
TW201508086A (zh) 2015-03-01

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