TWI569300B - Lighting device - Google Patents
Lighting device Download PDFInfo
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- TWI569300B TWI569300B TW102141386A TW102141386A TWI569300B TW I569300 B TWI569300 B TW I569300B TW 102141386 A TW102141386 A TW 102141386A TW 102141386 A TW102141386 A TW 102141386A TW I569300 B TWI569300 B TW I569300B
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- Prior art keywords
- excimer lamp
- electric field
- processed
- external electrode
- outer casing
- Prior art date
Links
- 230000005684 electric field Effects 0.000 claims description 34
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/458—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen pyroelectrical targets; targets for infrared or ultraviolet or X-ray radiations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/245—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps
- H01J9/247—Manufacture or joining of vessels, leading-in conductors or bases specially adapted for gas discharge tubes or lamps specially adapted for gas-discharge lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2209/00—Apparatus and processes for manufacture of discharge tubes
- H01J2209/01—Generalised techniques
- H01J2209/017—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
本發明係關於具有外部電極的準分子燈的照光裝置，特別是相關於對表面被形成細微的配線圖案的玻璃基板等被處理體照射紫外線進行處理之用的照光裝置。 The present invention relates to an illuminating device for an excimer lamp having an external electrode, and more particularly to an illuminating device for treating a target object such as a glass substrate having a fine wiring pattern on its surface by irradiating ultraviolet rays.
於半導體基板或液晶基板等製造工程，作為除去附著於半導體基板之晶圓，或者是液晶基板之玻璃基板等被處理體的表面之有機化合物等污漬的方法，廣泛利用使用紫外線的乾式洗淨方法。特別是在使用真空紫外光的根據臭氧或活性氧的洗淨方法，使用更有效率地在短時間進行洗淨的照光裝置，例如日本特開2010-125368號公報(專利文獻1)係屬已知。 In a manufacturing process such as a semiconductor substrate or a liquid crystal substrate, a dry cleaning method using ultraviolet rays is widely used as a method of removing a stain such as an organic compound on the surface of a substrate to be processed such as a wafer attached to a semiconductor substrate or a glass substrate such as a liquid crystal substrate. . In particular, in the case of cleaning by ozone or active oxygen using vacuum ultraviolet light, an illuminating device which is more efficiently washed in a short period of time is used, for example, Japanese Laid-Open Patent Publication No. 2010-125368 (Patent Document 1) know.
圖3、4係揭示於專利文獻1的照光裝置的概略構成圖。 3 and 4 are schematic configuration diagrams of the illumination device disclosed in Patent Document 1.
照光裝置21，在鉛直方向的下方側具有光取出開口的金屬製的燈室(lamp house)22的內部，作為光源，被配置封入氙氣等發光氣體的準分子燈23。燈室22的天花板附近設有供供給惰性氣體之用的惰性氣體供給管 24,24。 The illumination device 21 has a metal lamp chamber 22 having a light extraction opening on the lower side in the vertical direction, and an excimer lamp 23 in which a luminescent gas such as xenon gas is sealed as a light source. An inert gas supply pipe for supplying an inert gas is provided near the ceiling of the lamp chamber 22 24, 24.
前述準分子燈23，被配置於被夾於此氣體供給管24,24的空間的鉛直下方，於其更為下方有被處理體(工件)之玻璃基板W通過。 The excimer lamp 23 is disposed vertically below the space of the gas supply pipes 24 and 24, and the glass substrate W of the object to be processed (workpiece) passes therebelow.
前述準分子燈23，於放電容器25的上下外面上具備一對外部電極26,27，中介著放電容器25內的放電空間而對向配置，於上方的外部電極26被施加高電壓作為高壓電極發揮機能，在與被處理體W對向的下方的外部電極27被施加低電壓而作為低壓電極發揮機能。接著，至少下方的外部電極27藉由網目構造等而具有透光性。 The excimer lamp 23 includes a pair of external electrodes 26 and 27 on the upper and lower outer surfaces of the discharge vessel 25, and is disposed opposite to the discharge space in the discharge vessel 25, and a high voltage is applied to the upper external electrode 26 as a high voltage electrode. By functioning, a low voltage is applied to the lower external electrode 27 opposed to the object W to be used as a low-voltage electrode. Next, at least the lower external electrode 27 has light transmissivity by a mesh structure or the like.
對這些外部電極26,27施加高頻高電壓的話，在放電容器25內產生氙氣的準分子發光，產生波長172nm的紫外線，由放電容器25的下方往位在外殼21的下方的被處理體W照射。 When a high-frequency high voltage is applied to these external electrodes 26 and 27, excimer light emission of helium gas is generated in the discharge vessel 25, and ultraviolet rays having a wavelength of 172 nm are generated, and the object to be processed W which is positioned below the casing 21 from below the discharge vessel 25 Irradiation.
被處理體W，例如為液晶面板用的玻璃基板，以搬送輥等搬送的被處理體W到達準分子燈23的正下方時，照射來自該準分子燈23的真空紫外光。被處理體W的表面，藉由紫外線以及在周圍產生的活性氧等作用，使有機物被分解除去，洗淨後的被處理體W被搬出到外殼22的外部。 The object to be processed W is, for example, a glass substrate for a liquid crystal panel, and when the object to be processed W conveyed by a conveyance roller or the like reaches the position immediately below the excimer lamp 23, the vacuum ultraviolet light from the excimer lamp 23 is irradiated. The surface of the object W is decomposed and removed by the action of ultraviolet rays and active oxygen generated in the surroundings, and the object to be processed W after being washed is carried out to the outside of the casing 22.
又，收容準分子燈23的外殼22的內部，為了極力抑制由燈所放射的紫外線的衰減的目的，透過氣體供給管24,24導入而填充氮氣氣體等惰性氣體。 Further, the inside of the outer casing 22 accommodating the excimer lamp 23 is introduced through the gas supply pipes 24 and 24 for the purpose of suppressing the attenuation of the ultraviolet rays emitted from the lamp as much as possible, and is filled with an inert gas such as a nitrogen gas.
然而，作為前述被處理體W採用液晶面板用玻璃基板等的場合，照光處理，在被加工為液晶面板用之前的狀態下進行，因此，於基板(被處理體)W，如圖4所示，於表面上會有以導電性物質形成的配線圖案30露出。這樣的場合，在前述照光裝置21藉由光照射來處理基板W時，會發生此導電性物質破損的情形。 However, when the object to be processed W is a glass substrate for a liquid crystal panel or the like, the illuminating treatment is performed in a state before being processed into a liquid crystal panel. Therefore, the substrate (subject to be processed) W is as shown in FIG. A wiring pattern 30 formed of a conductive material is exposed on the surface. In such a case, when the substrate W is processed by the light irradiation device 21 by light irradiation, the conductive material may be damaged.
針對這樣的損傷，經過本案發明人銳意調查的結果，徹底查明了原因在於藉由被施加至準分子燈23的外部電極26,27的高電壓，在燈的周圍被形成電場，而此電場影響到被處理體W。 With respect to such damage, the result of the intensive investigation by the inventors of the present invention thoroughly ascertained that the electric field was formed around the lamp by the high voltage applied to the external electrodes 26, 27 of the excimer lamp 23, and this electric field was formed. Affects the object W to be processed.
針對此現象參照圖5、圖6進行說明。 This phenomenon will be described with reference to FIGS. 5 and 6 .
圖5係表現在外殼22內配設準分子燈23的照光裝置21的作用之模式圖，外殼22，係以SUS板或鋁板構成，於其內部的下方收容準分子燈23。 Fig. 5 is a schematic view showing the action of the illuminating device 21 in which the excimer lamp 23 is disposed in the casing 22. The casing 22 is made of a SUS plate or an aluminum plate, and the excimer lamp 23 is accommodated below the inside.
設於準分子燈23的上下外面上的一對外部電極26,27間被施加高頻高電壓，但通常於準分子燈23的上方外部電極26施加高電壓，對向於被處理體W的下方外部電極27被施加低電壓。因此，於準分子燈23得上面側被形成強的電場X。 A high-frequency high voltage is applied between the pair of external electrodes 26 and 27 provided on the upper and lower outer surfaces of the excimer lamp 23, but a high voltage is applied to the external electrode 26 above the excimer lamp 23, and is opposed to the object W to be processed. The lower external electrode 27 is applied with a low voltage. Therefore, a strong electric field X is formed on the upper side of the excimer lamp 23.
準分子燈23與被處理體W係被配置於接近的位置，此電場X的一部分，如圖5所示，其等電位線以到達準分子燈23的下方的被處理體W的位置為止的方式被形成。 The excimer lamp 23 and the object to be processed W are disposed at positions close to each other, and a part of the electric field X is as shown in FIG. 5, and the equipotential line reaches the position of the object W below the excimer lamp 23. The way is formed.
圖6係將圖5所示的照光裝置的準分子燈23及工件W沿著工件W的搬送方向切段的部分擴大剖面 圖。 Fig. 6 is a partially enlarged cross-sectional view showing the excimer lamp 23 and the workpiece W of the illuminating device shown in Fig. 5 cut along the conveying direction of the workpiece W. Figure.
被形成於玻璃基板等被處理體W上的導電性物質的配線圖案30有各種各樣，近來多被形成細微的配線圖案，隨著基板上的導電性物質的配置狀態，如圖所示，會受到被施加於準分子燈23的高電壓導致的電場，藉由配線圖案30在鄰接的導電性物質間產生電位差，而會在此間產生異常放電Y。 The wiring pattern 30 of the conductive material formed on the object W to be processed such as a glass substrate is various, and a fine wiring pattern is formed in recent years, and the arrangement state of the conductive material on the substrate is as shown in the figure. An electric field caused by a high voltage applied to the excimer lamp 23 is generated, and a potential difference is generated between the adjacent conductive substances by the wiring pattern 30, and an abnormal discharge Y is generated therebetween.
結果，據推測導電性物質會瞬間放電(spark)而飛散、破損。 As a result, it is presumed that the conductive material is scattered and damaged by a spark.
[專利文獻1]日本特開2010-125368號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-125368
本發明，有鑑於前述從前技術之問題點而完成之發明，目的在於提供在下方設有光取出開口的外殼內，收容著於放電容器的上下外面上具備一對外部電極的準分子燈而構成的照光裝置，使發生於上下外部電極間的電場的影像不會及於被處理體，防止在被處理體上的配線圖案產生異常放電，可以防止其破損之可信賴性高的照光裝置的構造。 The present invention has been made in view of the above problems of the prior art, and an object of the invention is to provide an excimer lamp having a pair of external electrodes on an upper and lower outer surface of a discharge vessel, which is provided in a casing having a light extraction opening. In the illuminating device, the image of the electric field generated between the upper and lower external electrodes is prevented from being in contact with the object to be processed, and the wiring pattern on the object to be processed is prevented from being abnormally discharged, and the structure of the illuminating device having high reliability can be prevented from being damaged. .
為了解決前述課題，相關於本發明的照光裝置，特徵在於在前述外殼的光取出開口，在高壓側的外部電極與被處理體之間，且在沿著前述準分子燈的長邊方向的位置，具備遮蔽被形成於高壓側的外部電極與低壓側的外部電極之間的電場之電場遮蔽構件。 In order to solve the above problems, an illumination device according to the present invention is characterized in that a light extraction opening of the casing is located between the external electrode on the high voltage side and the object to be processed, and along the longitudinal direction of the excimer lamp. There is provided an electric field shielding member that shields an electric field between the external electrode formed on the high voltage side and the external electrode on the low voltage side.
此外，特徵為前述電場遮蔽構件，被導電連接於前述外殼，透過該外殼接地。 Further, the electric field shielding member is electrically connected to the outer casing and grounded through the outer casing.
此外，特徵為在前述外殼內，具備供給惰性氣體的氣體供給手段，前述電場遮蔽構件，具備使前述惰性氣體朝向前述被處理體流出的通風孔。 Further, the inside of the casing is provided with a gas supply means for supplying an inert gas, and the electric field shielding member includes a vent hole for allowing the inert gas to flow toward the object to be processed.
根據此發明之照光裝置，藉由被施加於準分子燈的高頻高電壓，被形成於一對外部電極間的電場的影響不會及於被處理體，所以可以達成即使處理表面上被形成導電性物質所構成的配線圖案的被處理體的場合，也不會在配線圖案間產生不希望的異常放電，可以防患構成配線圖案的導電性物質的損傷於未然的效果。 According to the illumination device of the present invention, the influence of the electric field formed between the pair of external electrodes does not affect the object to be processed by the high-frequency high voltage applied to the excimer lamp, so that even if the surface is formed on the treatment surface In the case of the object to be processed of the wiring pattern formed of the conductive material, undesired abnormal discharge does not occur between the wiring patterns, and the effect of the damage of the conductive material constituting the wiring pattern can be prevented.
1‧‧‧照光裝置 1‧‧‧Lighting device
2‧‧‧外殼 2‧‧‧ Shell
2a‧‧‧光取出開口 2a‧‧‧Light removal opening
3‧‧‧準分子燈 3‧‧‧Excimer lamp
4‧‧‧惰性氣體供給管 4‧‧‧Inert gas supply pipe
5‧‧‧放電容器 5‧‧‧discharger
6‧‧‧高壓側外部電極 6‧‧‧High-voltage side external electrode
7‧‧‧低壓側外部電極 7‧‧‧Low-side external electrode
9‧‧‧外部電源 9‧‧‧External power supply
10‧‧‧電場遮蔽構件 10‧‧‧Electrical shielding members
11‧‧‧光取出窗 11‧‧‧Light removal window
12‧‧‧通風孔 12‧‧‧ Ventilation holes
W‧‧‧工件 W‧‧‧Workpiece
X‧‧‧電場 X‧‧‧ electric field
Y‧‧‧異常放電 Y‧‧‧Abnormal discharge
圖1係本發明的照光裝置的剖面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing an illumination device of the present invention.
圖2係說明本發明的作用的剖面圖。 Figure 2 is a cross-sectional view showing the action of the present invention.
圖3係從前的照光裝置的剖面圖。 Figure 3 is a cross-sectional view of a prior illumination device.
圖4係其一部分之擴大立體圖。 Figure 4 is an enlarged perspective view of a portion thereof.
圖5係說明從前的照光裝置的作用之剖面圖。 Fig. 5 is a cross-sectional view showing the action of the former illumination device.
圖6係其一部分之擴大剖面圖。 Figure 6 is an enlarged cross-sectional view of a portion thereof.
圖1係顯示本發明的照光裝置的構成之剖面圖。照光裝置1，在外殼2的內部被配設準分子燈3，於其下方被處理體W藉由搬送機構搬送，通過準分子燈3的正下方時，由該準分子燈3放射的紫外光，例如波長172nm的真空紫外光被照射於此被處理體，進行表面的乾式洗淨。 Fig. 1 is a cross-sectional view showing the configuration of an illuminating device of the present invention. In the illuminating device 1, the excimer lamp 3 is disposed inside the outer casing 2, and the object to be processed W is transported by the transport mechanism, and the ultraviolet light emitted from the excimer lamp 3 is directly emitted below the excimer lamp 3 For example, vacuum ultraviolet light having a wavelength of 172 nm is irradiated onto the object to be processed, and dry cleaning of the surface is performed.
於前述外殼2內的上方的天花板部附近設有惰性氣體供給管4,4，氮氣等惰性氣體被導入外殼2內，被充填，抑制來自燈2的真空紫外光的衰減。 Inert gas supply pipes 4, 4 are provided in the vicinity of the upper ceiling portion in the casing 2, and an inert gas such as nitrogen gas is introduced into the casing 2 to be filled, thereby suppressing the attenuation of the vacuum ultraviolet light from the lamp 2.
此外，前述外殼2的下端被形成取出來自準分子燈3的光的光取出開口2a。 Further, the lower end of the outer casing 2 is formed with a light extraction opening 2a for taking out light from the excimer lamp 3.
準分子燈3，具備剖面成為平口的矩形形狀之放電容器5，於其內部，作為發光氣體，準分子放電用的氣體以特定的封入量被封入。作為發光氣體使用氙氣的場合，通常封入10~70kPa。 The excimer lamp 3 has a rectangular discharge vessel 5 having a flat cross section, and as a luminescent gas therein, a gas for excimer discharge is sealed with a specific sealing amount. When helium gas is used as the luminescent gas, it is usually sealed at 10 to 70 kPa.
於此準分子燈3的放電容器5的上下外面上設有一對外部電極6,7，至少對向於被處理體W的下方的外部電極 7，藉由網目構造而具有透光性。 A pair of external electrodes 6, 7 are provided on the upper and lower outer surfaces of the discharge vessel 5 of the excimer lamp 3, at least facing the external electrode below the object W to be processed. 7, light transmission by the mesh structure.
前述外部電極6,7被連接於外部電源9，以準分子燈3的上側的外部電極6成為高壓側，與被處理體W對向的下側的外部電極7成為低壓側的方式，被施加高頻高電壓。 The external electrodes 6 and 7 are connected to the external power source 9 and are applied such that the external electrode 6 on the upper side of the excimer lamp 3 is on the high voltage side and the external electrode 7 on the lower side facing the object to be processed W is on the low pressure side. High frequency and high voltage.
於外殼2下端的光取出開口2a，設有電場遮蔽構件10。該電場遮蔽構件10為板狀構件所構成，準分子燈3的高壓側的外部電極6與被處理體W之間，且沿著前述準分子燈3的長邊方向設置，以遮蔽被形成於前述高壓側的外部電極6與前述低壓側的外部電極7之間的電場的方式設置。 An electric field shielding member 10 is provided at the light extraction opening 2a at the lower end of the outer casing 2. The electric field shielding member 10 is formed of a plate-like member, and is disposed between the external electrode 6 on the high voltage side of the excimer lamp 3 and the object W, along the longitudinal direction of the excimer lamp 3, and is formed in the shielding. The electric field between the external electrode 6 on the high voltage side and the external electrode 7 on the low voltage side is provided.
於此實施例，前述電場遮蔽構件10，係在準分子燈3的放電容器5的下面側，且接近於放電容器5的側面沿著其長邊方向設置。於此電場遮蔽構件10，對應於準分子燈3被形成光取出窗11，所以來自前述準分子燈3的射出光由此光取出窗11照射於被處理體W。 In this embodiment, the electric field shielding member 10 is disposed on the lower surface side of the discharge vessel 5 of the excimer lamp 3, and is disposed close to the side surface of the discharge vessel 5 along the longitudinal direction thereof. In the electric field shielding member 10, the light extraction window 11 is formed corresponding to the excimer lamp 3, so that the light emitted from the excimer lamp 3 is irradiated onto the object W by the light extraction window 11.
此電場遮蔽構件10，構成與外殼2導電連接，透過該外殼3接地，總是在GND電位。 The electric field shielding member 10 is electrically connected to the outer casing 2, and is grounded through the outer casing 3, always at the GND potential.
此外，如圖1所示，於外殼2設有惰性氣體供給管4,4的場合，採用於前述電場遮蔽構件10設置通風孔12而朝向被處理體W吹噴惰性氣體的方式亦可。此時，因應於準分子燈3的輸入電力等，有必要設定其大小與間距達到該準分子燈3產生的電場不會透過通風孔12漏出的程度。 In addition, as shown in FIG. 1, when the inert gas supply pipes 4 and 4 are provided in the outer casing 2, the electric field shielding member 10 may be provided with the vent holes 12, and the inert gas may be blown toward the object to be processed W. At this time, in response to the input power of the excimer lamp 3 or the like, it is necessary to set the size and the pitch so that the electric field generated by the excimer lamp 3 does not leak through the vent hole 12.
根據圖2說明本發明的作用。準分子燈3的外部電極6,7間被施加高電壓時，於這些電極6,7間被形成電場X，但是藉由前述電場遮蔽構件10使其一部分被遮蔽而停留於外殼2內，不會及於被處理體W側。因此，即使於該被處理體W的表面上被形成配線圖案等導電性物質，在配線圖案間也不會產生電位差，不會產生異常的放電，所以對構成配線圖案的導電性物質的損傷可以防患於未然，可以對被處理體W照射特定的紫外光，安全地進行所期望的處理。 The action of the present invention will be described based on Fig. 2 . When a high voltage is applied between the external electrodes 6, 7 of the excimer lamp 3, an electric field X is formed between the electrodes 6, 7 but a part of the electric field shielding member 10 is shielded and stays in the casing 2, Will be on the side of the object W. Therefore, even if a conductive material such as a wiring pattern is formed on the surface of the workpiece W, a potential difference does not occur between the wiring patterns, and abnormal discharge does not occur. Therefore, damage to the conductive material constituting the wiring pattern can be caused. In order to prevent the problem, the object to be treated W can be irradiated with a specific ultraviolet light, and the desired treatment can be performed safely.
又，為了因應準分子燈3的不同用途關係而選擇由燈射出的射出光的波長，採用在放電容器5的內面塗布螢光體的構造亦可。 Moreover, in order to select the wavelength of the emitted light emitted from the lamp in accordance with the different use relationship of the excimer lamp 3, a structure in which the phosphor is coated on the inner surface of the discharge vessel 5 may be employed.
以下，關於相關於本發明的照光裝置1，例示具體的數值。 Hereinafter, specific numerical values will be exemplified with respect to the illumination device 1 according to the present invention.
準分子燈3，放電容器5的全長為2100mm，寬幅方向的長度為42mm，高度方向的長度為15mm，構成放電容器5的石英玻璃的厚度為2.5mm。 In the excimer lamp 3, the total length of the discharge vessel 5 was 2,100 mm, the length in the width direction was 42 mm, the length in the height direction was 15 mm, and the thickness of the quartz glass constituting the discharge vessel 5 was 2.5 mm.
在此，放電容器5的四個角落的彎曲部，具有1.5mm以上的曲率半徑R。 Here, the bent portions of the four corners of the discharge vessel 5 have a radius of curvature R of 1.5 mm or more.
往準分子燈3的輸入負荷為2~3W/cm。 The input load to the excimer lamp 3 is 2 to 3 W/cm.
外殼2的全長為2300mm，高為50mm，寬幅為150mm。 The outer casing 2 has a total length of 2,300 mm, a height of 50 mm, and a width of 150 mm.
惰性氣體的流量為300L/分鐘。若是此流量的話，外殼2內的氧濃度約為0.5~3%。 The flow rate of the inert gas was 300 L/min. If this flow rate is present, the oxygen concentration in the outer casing 2 is about 0.5 to 3%.
電場遮蔽構件10，係材質SUS所構成的板狀體，板狀體的厚度為0.5~2mm。此外，中央開口(光取出窗11)的尺寸例如為2100mm×45mm。 The electric field shielding member 10 is a plate-like body made of a material SUS, and the thickness of the plate-shaped body is 0.5 to 2 mm. Further, the size of the central opening (light extraction window 11) is, for example, 2100 mm × 45 mm.
進而，電場遮蔽構件10與高壓側的外部電極6之距離約15mm，與低壓側的外部電極7的距離約為0~5mm。 Further, the distance between the electric field shielding member 10 and the external electrode 6 on the high voltage side is about 15 mm, and the distance from the external electrode 7 on the low voltage side is about 0 to 5 mm.
此電場遮蔽構件10，例如以衝壓金屬形成，具備被形成鋸齒狀的圓孔所構成的通風孔12。通風孔12，舉出一例的話，孔的直徑為6mm，中心間距為8mm，開口率為51%，舉其他例的話，孔的直徑為1.5mm，中心間距為2mm，開口率同樣為51%。 The electric field shielding member 10 is formed, for example, of a stamped metal, and includes a vent hole 12 formed by a serrated circular hole. For example, the vent hole 12 has a diameter of 6 mm, a center-to-center spacing of 8 mm, and an aperture ratio of 51%. In other examples, the hole has a diameter of 1.5 mm, a center-to-center spacing of 2 mm, and an aperture ratio of 51%.
如以上所說明的，於本發明，藉由在收容了準分子燈的外殼的光取出開口，在前述準分子燈的高壓側的外部電極與被處理體之間，具備遮蔽該高壓側的外部電極與低壓側的外部電極之間形成的電場的電場遮蔽構件，使得在一對外部電極間施加高頻高電壓時形成的電場的一部分藉由前述電場遮蔽構件遮蔽而不及於被處理體側，可以在被處理體上的配線圖案間不發生異常放電，可以防止其損傷。 As described above, in the present invention, the light extraction opening of the outer casing in which the excimer lamp is housed is provided with an external portion that shields the high voltage side between the external electrode on the high voltage side of the excimer lamp and the object to be processed. An electric field shielding member of an electric field formed between the electrode and the external electrode on the low voltage side causes a part of the electric field formed when a high-frequency high voltage is applied between the pair of external electrodes to be shielded by the electric field shielding member from the side of the object to be processed. No abnormal discharge can occur between the wiring patterns on the object to be processed, and damage can be prevented.
1‧‧‧照光裝置 1‧‧‧Lighting device
2‧‧‧外殼 2‧‧‧ Shell
2a‧‧‧光取出開口 2a‧‧‧Light removal opening
3‧‧‧準分子燈 3‧‧‧Excimer lamp
4‧‧‧惰性氣體供給管 4‧‧‧Inert gas supply pipe
5‧‧‧放電容器 5‧‧‧discharger
6‧‧‧高壓側外部電極 6‧‧‧High-voltage side external electrode
7‧‧‧低壓側外部電極 7‧‧‧Low-side external electrode
9‧‧‧外部電源 9‧‧‧External power supply
10‧‧‧電場遮蔽構件 10‧‧‧Electrical shielding members
11‧‧‧光取出窗 11‧‧‧Light removal window
12‧‧‧通風孔 12‧‧‧ Ventilation holes
W‧‧‧工件 W‧‧‧Workpiece
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|---|---|---|---|
| JP2013008064A JP5601551B2 (en) | 2013-01-21 | 2013-01-21 | Light irradiation device |
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|---|---|
| TW201432779A TW201432779A (en) | 2014-08-16 |
| TWI569300B true TWI569300B (en) | 2017-02-01 |
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| TW102141386A TWI569300B (en) | 2013-01-21 | 2013-11-14 | Lighting device |
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| JP (1) | JP5601551B2 (en) |
| KR (2) | KR101955042B1 (en) |
| CN (1) | CN103943536A (en) |
| TW (1) | TWI569300B (en) |
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| JP7003431B2 (en) * | 2017-04-06 | 2022-01-20 | ウシオ電機株式会社 | Light irradiation device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005050705A (en) * | 2003-07-29 | 2005-02-24 | Hamamatsu Photonics Kk | Static charge eliminator |
| TW200937492A (en) * | 2008-02-21 | 2009-09-01 | Orc Mfg Co Ltd | Ultraviolet radiation apparatus |
| JP2010125368A (en) * | 2008-11-26 | 2010-06-10 | Ushio Inc | Excimer lamp device |
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| JP5155041B2 (en) * | 2008-07-03 | 2013-02-27 | 浜松ホトニクス株式会社 | Planar mercury lamp and light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005050705A (en) * | 2003-07-29 | 2005-02-24 | Hamamatsu Photonics Kk | Static charge eliminator |
| TW200937492A (en) * | 2008-02-21 | 2009-09-01 | Orc Mfg Co Ltd | Ultraviolet radiation apparatus |
| JP2010125368A (en) * | 2008-11-26 | 2010-06-10 | Ushio Inc | Excimer lamp device |
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| KR101955109B1 (en) | 2019-03-06 |
| KR20140094437A (en) | 2014-07-30 |
| TW201432779A (en) | 2014-08-16 |
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| KR101955042B1 (en) | 2019-03-06 |
| CN103943536A (en) | 2014-07-23 |
| JP5601551B2 (en) | 2014-10-08 |
| KR20170101860A (en) | 2017-09-06 |
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