TWI588925B - Light irradiation device - Google Patents

Description

Light irradiation device

The present invention relates to a light irradiation device that irradiates ultraviolet rays. More specifically, the present invention relates to a photo-ashing treatment of a photoresist which can be suitably applied to a manufacturing process of a semiconductor, a liquid crystal, or the like, and a photoresist removal process of a pattern surface attached to a template of a nanoimprint method. A dry cleaning process such as a glass substrate for liquid crystal or a germanium wafer, or a light irradiation device for desmear processing of a printed circuit board manufacturing process.

For example, in a manufacturing process of a semiconductor element, a liquid crystal panel, or the like, ashing treatment of a photoresist and dry cleaning treatment of a glass substrate or a germanium wafer are performed. Further, in the nanoimprint method, the removal treatment of the photoresist attached to the pattern surface of the template is performed. Further, in the printed circuit board manufacturing process, the wiring substrate material is subjected to desmear treatment and roughening of the surface of the insulating layer. Then, as a means for performing the above-described processes, a light irradiation device that irradiates an object to be irradiated with ultraviolet rays in an atmosphere of a processing gas containing an active seed source such as oxygen is known (for example, see Patent Document 1).

In the light irradiation device, by the periphery of the object to be treated The treatment gas is irradiated with vacuum ultraviolet rays, and oxygen in the treatment gas is decomposed to generate oxygen radicals. Then, the object to be treated is brought into contact with the object to be ashed, and specifically, the object to be treated and the foreign matter of the object to be treated are ashed.

In such a light irradiation device, as the ashing of the object to be processed is performed, oxygen which is an active species source is consumed, and a decomposition gas such as CO ₂ is generated. Therefore, the concentration of the active species in the treatment gas around the object to be treated is lowered, and the decomposition gas such as CO ₂ absorbs ultraviolet rays, and the amount of generation of oxygen radicals is lowered. For this reason, the ultraviolet rays are irradiated to the workpiece while the fresh processing gas is supplied from the one end side to the other end side of the workpiece.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-075965

However, in the above-described light irradiation device, the following problems were found.

The decomposition gas such as CO ₂ generated by the ashing of the workpiece flows together with the processing gas. Therefore, the concentration of oxygen in the downstream side region of the flow of the processing gas is lower than the concentration of oxygen in the upstream side region where the fresh processing gas is supplied. Further, the concentration of the decomposition gas such as CO _{2 in the} downstream side region is higher than the concentration of the decomposition gas in the upstream side region. Thereby, the amount of generation of oxygen radicals in the downstream side region is lower than the amount of generation of oxygen radicals in the upstream side region, and it is difficult to uniformly treat the entire surface of the workpiece to be processed.

An object of the present invention is to provide a light irradiation device which can cover the entire surface of a processed object to be processed uniformly.

The light irradiation device of the present invention includes a processing chamber in which a workpiece is disposed, an ultraviolet light emitting lamp that emits vacuum ultraviolet rays to the workpiece, and a gas supply means that supplies a processing gas containing an active seed source to the processing chamber. The light irradiation device is characterized in that a gas supply port for supplying a processing gas to the processing chamber and a gas discharge port for discharging the gas in the processing chamber are provided on both sides of the processing object arrangement region in the processing chamber. A gas flow path through which the processing gas flows from the gas supply port toward the gas discharge port is formed in the processing chamber, and the degree of arrival of the gas discharge port of the gas supply port is controlled to be 60 to 95%.

In the light irradiation device of the present invention, it is preferable that the processing gas supply amount adjusting means for setting the gas amount of the gas supply port and the flow rate measuring the gas amount of the gas discharge port are preferable.

Further, the processing gas supply amount adjusting means for setting the gas amount of the gas supply port and the pressure of the gas pressure for measuring the gas discharge port The force meter is better.

It is preferable that the processing gas supply amount adjusting means for setting the gas amount of the gas supply port and the gas concentration measuring means for measuring the concentration of the specific gas component in the gas of the gas discharge port are preferable.

Further, it is preferable that a gas leaking portion that leaks gas from the processing chamber is formed at a position on both sides in the flow direction of the processing gas in the gas flow path.

Further, the gas recovery chamber for recovering the gas leaking from the processing chamber is preferably provided so as to surround the processing chamber.

In such a light irradiation device, it is preferable that the internal pressure of the gas recovery chamber is maintained at a pressure lower than the internal pressure of the processing chamber during operation.

Further, during the operation, it is preferable that the internal pressure of the gas recovery chamber is maintained at a pressure lower than atmospheric pressure.

According to the light-irradiating apparatus of the present invention, the degree of arrival of the gas discharge port of the gas supply port is controlled to be 60 to 95%, and the concentration of the active seed source is suppressed in the downstream side region of the processing gas flow path. It is lowered and the rise in the concentration of the decomposition gas is suppressed. Therefore, it is possible to cover the light irradiation device which uniformly processes the entire surface of the object to be processed.

10‧‧‧ mounting table

12‧‧‧ gas supply port

13‧‧‧ gas discharge

15‧‧‧Processing room forming materials

20‧‧‧Light source unit

21‧‧‧ housing

22‧‧‧UV transmission window

25‧‧‧UV emission lamp

40‧‧‧Processing gas supply means

41‧‧‧ gas pipe

42‧‧‧ flowmeter

45‧‧‧Processing gas supply adjustment means

46‧‧‧ gas pipe

47‧‧‧Ozone concentration meter

48‧‧‧ Flowmeter

50‧‧‧Gas recovery chamber forming materials

51‧‧‧One side wall

52‧‧‧Other side wall

55‧‧‧Air inlet

56‧‧‧ gas suction port

57‧‧‧Differential pressure gauge

W‧‧‧Processed objects

S1‧‧‧ lamp tube storage room

S2‧‧‧Processing Room

S3‧‧‧ gas recovery room

Fig. 1 is a view showing the internal structure of an example of the light irradiation device of the present invention. Make a rough description of the cross-section.

Fig. 2 is a plan view showing a state in which the light source unit is removed in the light irradiation device shown in Fig. 1.

Fig. 3 is an explanatory view showing the shape of a side wall view of a processing chamber forming material in the light irradiation device shown in Fig. 1.

Fig. 4 is a graph showing the relationship between the degree of arrival of the gas discharge port of the gas amount of the gas supply port measured in the experimental example and the uniformity of the ashing treatment.

Hereinafter, embodiments of the light irradiation device of the present invention will be described in detail.

Fig. 1 is a cross-sectional view for explaining an outline of the structure inside an example of the light irradiation device of the present invention. Fig. 2 is a plan view showing a state in which the light source unit is removed in the light irradiation device shown in Fig. 1;

In the light irradiation device, for example, a mounting table 10 on which a workpiece W having a substantially flat shape is placed is provided. The light source unit 20 is disposed on the mounting table 10 via a rectangular frame-shaped processing chamber forming material 15 disposed along a peripheral portion of the upper surface of the mounting table 10.

The light source unit 20 is provided with a casing 21 having a box shape of a substantially rectangular parallelepiped shape. A substantially flat ultraviolet ray transmitting window 22 that transmits vacuum ultraviolet rays is provided on the lower wall portion of the casing 21. A sealed bulb storage chamber S1 is formed inside the casing 21. Further, between the ultraviolet ray transmitting window 22 and the mounting table 10, the processing chamber forming material 15 is surrounded, and a treatment is formed. Processing chamber S2 of physical object W.

Further, in the light irradiation device of the illustrated example, the gas recovery chamber S3 that recovers the gas leaking from the processing chamber S2 is provided so as to surround the processing chamber S2. Specifically, the light irradiation device is provided with a box-shaped gas recovery chamber forming material 50 having a rectangular parallelepiped shape in the upper wall portion. Inside the gas recovery chamber forming material 50, the mounting table 10 and the processing chamber forming material 15 are housed. The light source unit 20 is disposed on the processing chamber forming material 15 in a state in which the casing 21 is fitted into the opening of the gas recovery chamber forming material 50. Then, the gas recovery chamber S3 is formed by surrounding the inner surface of the gas recovery chamber forming material 50 with the outer surfaces of the mounting table 10 and the processing chamber forming material 15.

In the lamp tube accommodating chamber S1, the rod-shaped plurality of ultraviolet light-emitting lamps 25 are arranged in parallel with each other in the same horizontal plane. Further, a mirror (not shown) is provided above the ultraviolet light emitting lamp 25 of the bulb storage chamber S1. Further, a gas removing means (not shown) for cleaning the inside of the lamp storage chamber S1 by an inert gas such as nitrogen gas is provided in the casing 21.

As the ultraviolet light emitting lamp 25, any known light bulb can be used as long as it emits ultraviolet light. Specifically, for example, the ultraviolet light emitting lamp 25 can be exemplified by a low-pressure mercury lamp that emits vacuum ultraviolet light of 185 nm, a xenon excimer lamp that emits vacuum ultraviolet light having a center wavelength of 172 nm, or a helium gas enclosed in the light-emitting tube, and is inside the light-emitting tube. For example, a fluorescent excimer lamp or the like formed by emitting a fluorescent material having a vacuum ultraviolet light of 190 nm is applied.

The material constituting the ultraviolet ray transmitting window 22 may be transmissive to vacuum ultraviolet rays emitted from the ultraviolet ray emitting lamp 25, and may have resistance to vacuum ultraviolet rays and active species generated. As such a material, for example, synthetic quartz glass can be used.

In the mounting table 10, the gas supply port 12 for supplying the processing gas in the processing chamber S2 is inserted in the thickness direction of the mounting table 10 on the side (the right side in the drawing) where the workpiece arrangement region of the workpiece W is placed. form. In addition, the gas discharge port 13 of the gas discharged into the processing chamber S2 is formed to penetrate the thickness direction of the mounting table 10 on the other side (the left side in the drawing) of the workpiece arrangement region in which the workpiece W is placed. Thereby, a gas flow path through which the processing gas flows from the gas supply port 12 toward the gas discharge port 13 is formed in the processing chamber S2. The individual opening shapes of the gas supply port 12 and the gas discharge port 13 are in a strip shape extending in the direction of the tube axis of the ultraviolet light emitting lamp 25.

A gas pipe 41 is connected to the gas supply port 12. A processing gas supply means 40 for supplying a processing gas to the processing chamber S2 is connected to the gas pipe 41. The gas pipe 41 is provided with a flow meter 42 that measures the amount of gas of the gas supply port 12. Further, in the gas pipe 41, a processing gas supply amount adjusting means 45 for setting the amount of gas of the gas supply port 12 is provided at a position between the processing gas supply means 40 and the flow meter 42.

As the processing gas supplied from the processing gas supply means 40, a source containing an active species is used. The active species contained in the processing gas may be an active species that is subjected to vacuum ultraviolet rays. Specific examples of such an active seed source include oxygen radicals such as oxygen (O ₂ ) and ozone (O ₃ ), OH radicals such as water vapor, and halogen radicals (for example, A fluorine radical such as carbon tetrafluoride (CF ₄ ) is generated, and a chlorine radical such as chlorine (Cl ₂ ) or a bromine radical such as hydrogen bromide (HBr) is generated. Among these, oxygen radicals are preferred.

The concentration of the active seed source in the treatment gas is preferably 50% by volume or more, more preferably 70% by volume or more. When such a treatment gas is used, a sufficient amount of active species can be generated by the treatment gas being subjected to vacuum ultraviolet rays, so that the desired treatment can be surely performed.

A gas pipe 46 is connected to the gas discharge port 13. The gas pipe 46 is provided with an ozone concentration meter 47 that measures the concentration of a characteristic gas component such as ozone in the gas of the gas discharge port 13, and a flow meter 48 that measures the gas amount of the gas discharge port 13.

Further, it is preferable that the mounting table 10 is provided with a heating means (not shown) for heating the workpiece W. According to this configuration, as the temperature of the surface to be treated of the workpiece W rises, the action of the active species can be promoted. Therefore, the processing for the workpiece W can be performed efficiently. Moreover, the processing gas can be supplied to the processing chamber S2 by the processing gas flowing through the gas supply port 12. Therefore, even if the processing gas flows along the surface to be processed of the workpiece W, the temperature of the surface to be processed of the workpiece W can be increased, and as a result, the above effects can be more reliably obtained.

The heating condition by the heating means is such that the temperature of the surface to be treated of the workpiece W is, for example, 80 ° C or higher, and the temperature is preferably 340 ° C or lower. It is desirable to be a condition of 80 ° C or more and 200 ° C or less.

The gas in the processing chamber S2 is leaked from the processing chamber S2 to a position on both sides in the flow direction of the processing gas in the gas flow path from the gas supply port 12 of the processing chamber S2 to the gas discharge port 13 A gas leaking portion of the gas recovery chamber S3. Specifically, between the upper end of the side wall portion on both sides (the upper side and the lower side in FIG. 2) of the gas flow path of the processing chamber forming member 15, and the lower surface of the casing 21 of the light source unit 20, as shown in FIG. A gap G is formed, and a gas leak is formed by the gap G.

Further, in the present embodiment, the gap G of Fig. 3 has been described. However, the gap G may be any type as long as it is a gas leakable. For example, a slight gap may be formed between the lower surface of the casing 21 of the light source unit 20 and the processing chamber forming material 15 and between the ultraviolet transmitting window 22 and the processing chamber forming material 15.

One side wall portion 51 of the gas recovery chamber forming material 50 is formed with an air introduction port 55 for introducing air into the gas recovery chamber S3. Further, the other side wall portion 52 of the gas recovery chamber forming material 50 is formed with a gas suction port 56 for sucking gas into the gas recovery chamber S3. The gas suction port 56 is connected to a decompression means (not shown) that decompresses the gas recovery chamber S3. The gas in the gas recovery chamber S3 is exhausted by a decompression means such as a blower, and the inside of the gas recovery chamber S3 can be maintained in a reduced pressure state.

Further, the light irradiation device is provided with a differential pressure gauge 57 that measures the difference between the internal pressure of the processing chamber S2 and the internal pressure of the gas recovery chamber S3.

In the light irradiation device of the present invention, the irradiation of the ultraviolet rays to the workpiece W is performed as described below.

First, the workpiece W is placed on the workpiece arrangement area on the mounting table 10. The workpiece W is heated by a heating means provided on the mounting table 10 as needed.

Next, an inert gas is supplied to the bulb storage chamber S1 by means of a gas cleaning means. Thereby, the inside of the lamp storage chamber S1 is cleaned by an inert gas.

Moreover, the processing gas is supplied to the processing chamber S2 through the gas supply means 12 by the processing gas supply means. The processing gas supplied into the processing chamber S2 is discharged from the processing chamber S2 through the gas discharge port 13. Thereby, in the processing chamber S2, the processing gas flows along the gas flow path from the gas supply port 12 toward the gas discharge port 13. At this time, a part of the processing gas supplied from the gas supply port 12 to the processing chamber S2 leaks from the gas leaking portion to the gas recovery chamber S3.

Thereafter, the ultraviolet light emitting lamp 25 of the light source unit 20 is turned on. Then, the vacuum ultraviolet ray from the ultraviolet ray emitting lamp 25 passes through the ultraviolet ray transmitting window 22, is irradiated to the workpiece W, and is irradiated to the ultraviolet ray transmitting window 22 and the workpiece W and the processing gas flowing through the gap. Thereby, the active species are produced by decomposition of the active species contained in the processing gas. As a result, the required treatment of the workpiece W is performed by the vacuum ultraviolet rays reaching the surface to be processed of the workpiece W and the active species generated by the vacuum ultraviolet rays.

In the above, the degree of arrival of the gas amount of the gas supply port 12 at the gas discharge port 13 (hereinafter referred to as "gas amount arrival degree") The control is 60~95%, ideally 63~93%. The gas amount arrival degree represents the ratio of the amount of gas of the gas supply port 12 to the amount of gas of the gas discharge port 13. In the light irradiation device of the illustrated example, the gas amount arrival degree can be confirmed based on the amount of gas measured by the flow meter 42 and the amount of gas measured by the flow meter 48. Further, when the gas amount arrival degree changes, the concentration of ozone in the specific gas component in the gas at the gas discharge port also changes. Therefore, it is also possible to confirm the gas amount arrival degree based on the concentration of ozone measured by the ozone concentration meter 47 by previously performing a calibration curve relating to the gas amount reaching degree and the concentration of ozone in the gas at the gas discharge port. .

When the gas amount arrival degree is less than 60%, it is difficult for the processing gas to flow from the upstream side region of the gas flow path to the downstream side region, and the decomposition gas generated in the downstream side region is retained. Therefore, the concentration of the decomposition gas in the region on the downstream side of the gas flow path becomes high. On the other hand, when the gas amount arrival degree exceeds 95%, all or most of the decomposition gas generated in the upstream region of the gas flow path flows to the downstream side region. Therefore, the concentration of the decomposition gas in the region on the downstream side of the gas flow path becomes high.

The degree of gas arrival can be changed by changing the size of the gas leakage portion, specifically, the upper end of the side wall portion on both sides of the gas flow path of the process chamber forming material S2, and the lower surface of the casing 21 of the light source unit 20, Change the size of the gap to make adjustments.

When the distance between the ultraviolet ray transmitting window 22 and the workpiece W is 0.1 to 3 mm, the gas amount of the gas supply port 12 is preferably 1 to 100 mm/sec, and the flow rate of the processing gas on the workpiece W is preferably 1 to 100 mm/sec. Ideally adjusted in 2~50mm/sec mode.

The flow rate of the processing gas on the workpiece W (the flow rate of the processing gas flowing through the gap between the ultraviolet ray transmitting window 22 and the workpiece W) can be obtained as follows.

The cross-sectional area C of the cross section perpendicular to the flow direction of the processing gas in the gas flow space of the processing chamber S2 is the flow space of the processing gas on the workpiece W (the gap between the ultraviolet ray transmitting window 22 and the workpiece W) The cross-sectional area C1 perpendicular to the flow direction of the processing gas and the cross-sectional area C2 of the cross section perpendicular to the flow direction of the processing gas in the flow space of the processing gas around the workpiece W (C=C1+C2) .

Then, when the ratio (C2/C1×100) of the cross-sectional area C1 to the cross-sectional area C2 is 2% or less, or when the gas amount arrival degree is 70% or more, it can be calculated by the following formula (1) (Approximate) the flow rate of the aforementioned processing gas.

Equation (1): V=Q/C

However, V is the flow rate (unit: m/s) of the processing gas on the workpiece W, and Q is the flow rate (unit: mm ³ /sec) of the processing gas flowing through the gas discharge port 13, and C is the treatment The cross-sectional area (unit: mm ² ) of the cross section perpendicular to the flow direction of the processing gas in the gas flow space of the chamber S2. Here, the flow rate of the processing gas flowing through the gas discharge port 13 is the value obtained by multiplying the flow rate of the processing gas supplied to the processing chamber S2 by the gas amount arrival degree.

In addition, when the ratio (C2/C1×100) of the cross-sectional area C1 to the cross-sectional area C2 exceeds 2%, or when the gas amount arrival degree is less than 70%, for example, the general-purpose thermal fluid analysis software "ANSYS Fluent" is used. (ANSYS The company system is configured to perform the condition setting described later, and analyzes the action of the processing gas in the processing chamber S2, whereby the flow rate of the processing gas can be calculated.

Flow path model: The flow path model of the processing gas is set based on the mounting table 10, the workpiece W, the ultraviolet ray transmitting window 22, the gap between the ultraviolet ray transmitting window 22 and the workpiece W, the shape and arrangement of the sealing member, and the like.

The physical condition setting of the processing gas is to input the density and viscosity coefficient of the processing gas (for example, when the processing gas is oxygen, the density is 1.2999 kg/m ³ and the viscosity coefficient is 1.92 × 10 ^-5 Pa·s).

The marginal condition setting: the inlet of the processing gas (the opening of the gas supply port 12) is set at (m/s). The outflow port of the processing gas (opening of the gas discharge port) is an atmospheric pressure surface.

Moreover, in order to confirm the uniformity of the processing gas, it is performed by a constant calculation. Moreover, the flow velocity of the processing gas is obtained as an average value of the space above the processed surface of the workpiece W (approximation).

Further, in the operation of the light irradiation device, the internal pressure of the gas recovery chamber S3 is preferably maintained at a pressure lower than the internal pressure of the processing chamber S2. Thereby, the gas in the processing chamber S2 can be surely leaked into the gas recovery chamber S3 through the gas leakage portion. Specifically, the difference between the internal pressure of the processing chamber S2 and the internal pressure of the gas recovery chamber S3 is preferably 50 Pa or more, and particularly preferably 100 to 500 Pa.

Further, in the operation of the light irradiation device, it is preferable that the internal pressure of the gas recovery chamber S3 is maintained at a pressure lower than the atmospheric pressure. Thereby preventing The processing gas recovered by the gas recovery chamber S3 flows out to the outside. In addition, since the collected processing gas is diluted by introducing air from the air introduction port 55 by the gas recovery chamber S3, it is easy to perform treatment such as harmful gas in the processing gas. Specifically, the difference between the internal pressure of the gas recovery chamber S3 and the atmospheric pressure is preferably 30 Pa or more, and particularly preferably 30 to 1000 Pa.

Further, in the operation of the light irradiation device, the internal pressure of the processing chamber S2 is preferably maintained at a pressure higher than the internal pressure of the bulb storage chamber S1. Thereby, it is possible to prevent the gas in the bulb storage chamber S1 from flowing into the processing chamber S2. Specifically, the difference between the internal pressure of the processing chamber S2 and the internal pressure of the bulb storage chamber S1 is preferably 30 Pa or more, and particularly preferably 30 to 1000 Pa.

According to the light irradiation device of the present invention, the degree of arrival of the gas discharge port 13 by the gas amount of the gas supply port 12 is controlled to be 60 to 95%, and the active seed source is suppressed in the downstream side region of the processing gas flow path. The concentration is lowered, and the increase in the concentration of the decomposition gas is suppressed. Therefore, it is possible to cover the light irradiation device in which the entire surface of the object to be processed W is processed uniformly.

The light irradiation device of the present invention is not limited to the above embodiment, and various modifications can be applied.

For example, a pressure gauge that measures the gas pressure of the gas discharge port 13 may be provided instead of the ozone concentration meter 47. When the gas amount reaches a degree of change, the gas pressure at the gas discharge port also changes. Therefore, it is also possible to confirm the change in the gas amount arrival degree based on the gas pressure measured by the pressure gauge by performing a calibration curve relating to the gas flow arrival degree and the gas pressure of the gas discharge port in advance.

<Experimental Example 1>

Hereinafter, an experimental example performed to confirm the effects of the present invention will be described.

According to the structure shown in FIGS. 1 to 3, a light irradiation device for experiments was produced in accordance with the specifications described later.

[Placement table (10)]

Size: 650mm × 560mm × 20mm

Material: aluminum

Opening size of the gas supply port 12: 500 mm × 5 mm

Opening size of the gas discharge port 13: 500 mm × 10 mm

[UV emission lamp (25)]

Diameter of ultraviolet injection lamp: 40mm

Light-emitting length of ultraviolet light emitting lamp: 700mm

Input power: 500W

Number of ultraviolet light emitting lamps: 5

[UV transmission window member 22]

Size: 550mm × 550mm × 5mm

Material: Synthetic quartz glass

[Processing Room S2]

Size: 600mm × 504mm × 0.5mm

[Gas recovery chamber S3]

Size: 800mm × 700mm × 40mm

The light irradiation device was operated under the conditions described later, and the gauge pressure (positive pressure) of the gas discharge port and the concentration of ozone were measured. The results are disclosed in Table 1.

[Operating conditions]

Processing gas: oxygen concentration 100%

Gas supply at the gas supply port: 1L/min

The amount of gas in the gas discharge port: as shown in Table 1.

Gauge pressure (negative pressure) of gas recovery chamber: 70Pa

According to the results of Table 1, it can be understood that the gas pressure at the gas discharge port and the ozone concentration also change when the gas amount arrival degree changes. Therefore, the change in the degree of arrival of the gas amount can be confirmed by the gas pressure of the gas discharge port or the concentration of ozone.

<Experimental Example 2>

Using the light irradiation device produced in Experimental Example 1, a desmear treatment was performed on a printed wiring board material to be described later on a condition to be described later.

[Printed wiring substrate material]

Structure: An insulating layer is laminated on the copper foil to form a through hole in the insulating layer.

Plane size: 500mm × 500mm × 0.5mm

The thickness of the copper foil is 35μm

Insulation thickness: 30μm

Through hole diameter: 50μm

〔condition〕

Processing gas: oxygen concentration 100%

Distance between illumination window and printed wiring substrate: 0.5mm

The temperature of the mounting table: 120 ° C

Gas supply at the gas supply port: 0.3L/min

The amount of gas in the gas discharge port: as shown in Table 1.

Gauge pressure (positive pressure) on the gas discharge side: as shown in Table 1

Vacuum ultraviolet light irradiation time: 200 seconds

Gauge pressure (negative pressure) of gas recovery chamber: 70Pa

After the light irradiation treatment, the through hole formed at a position separated by 30 mm from the upstream end portion of the flow path of the processing gas for the printed wiring board material, the through hole formed at the center position, and the position separated from the downstream end portion by 30 mm The bottom portion (copper foil) of the formed through holes was subjected to elemental analysis by X-ray energy dispersive analysis (EDX), and the ratio of carbon to copper (hereinafter referred to as "C/Cu ratio") was measured. Further, the C/Cu ratio of the bottom of each of the through holes of the printed wiring board material before the treatment was 0.80.

Then, based on the obtained C/Cu ratio, the uniformity of the desmear treatment was determined by the following formula. The results are disclosed in Table 2 and Figure 4.

Uniformity = (maximum value of C/Cu ratio - minimum value of C/Cu ratio) / (maximum value of C/Cu ratio + minimum value of C/Cu ratio) × 100 [%]

As shown in Table 2 and FIG. 4, when the gas amount arrival degree is 60 to 95%, good uniformity (uniformity is 20% or less) can be confirmed with respect to the desmear treatment.

10‧‧‧ mounting table

12‧‧‧ gas supply port

13‧‧‧ gas discharge

15‧‧‧Processing room forming materials

20‧‧‧Light source unit

21‧‧‧ housing

22‧‧‧UV transmission window

25‧‧‧UV emission lamp

40‧‧‧Processing gas supply means

41‧‧‧ gas pipe

42‧‧‧ flowmeter

45‧‧‧Processing gas supply adjustment means

46‧‧‧ gas pipe

47‧‧‧Ozone concentration meter

48‧‧‧ Flowmeter

50‧‧‧Gas recovery chamber forming materials

51‧‧‧One side wall

52‧‧‧Other side wall

55‧‧‧Air inlet

56‧‧‧ gas suction port

57‧‧‧Differential pressure gauge

W‧‧‧Processed objects

S1‧‧‧ lamp tube storage room

S2‧‧‧Processing Room

S3‧‧‧ gas recovery room

Claims (8)

A light irradiation device includes a processing chamber in which a workpiece is disposed, an ultraviolet light emitting lamp that emits vacuum ultraviolet rays to the workpiece, and a light supply means that supplies a processing gas containing an active seed source to the processing chamber. The illuminating device is characterized in that a gas supply port for supplying a processing gas to the processing chamber and a gas discharge port for discharging the gas in the processing chamber are provided on both sides of the processing object arrangement region in the processing chamber. A gas flow path through which the processing gas flows from the gas supply port toward the gas discharge port is formed in the processing chamber, and a gas leaking portion that leaks gas from the processing chamber is formed in the gas flow path; and a gas amount of the gas supply port The degree of arrival of the aforementioned gas discharge port is controlled to be 60 to 95%. The light irradiation device according to the first aspect of the invention, wherein the processing gas supply amount adjusting means sets the gas amount of the gas supply port, and the flow meter measures the gas amount of the gas discharge port. The light irradiation device according to the first aspect of the invention, wherein the processing gas supply amount adjusting means sets the gas amount of the gas supply port; and the pressure gauge measures the gas pressure of the gas discharge port. The light irradiation device according to the first aspect of the invention, wherein the processing gas supply amount adjusting means sets the gas amount of the gas supply port; and the gas concentration measuring means measures the gas of the gas discharge port The concentration of a particular gas component in it. The light irradiation device according to the first aspect of the invention, wherein the gas leakage portion is formed at a position on both sides in a flow direction of the processing gas of the gas flow path. The light irradiation device according to the first aspect of the invention, wherein the gas recovery chamber for recovering the gas leaking from the processing chamber is provided to surround the processing chamber. The light irradiation device according to claim 6, wherein during the operation, the internal pressure of the gas recovery chamber is maintained at a pressure lower than an internal pressure of the processing chamber. The light irradiation device according to claim 7, wherein during the operation, the internal pressure of the gas recovery chamber is maintained at a pressure lower than atmospheric pressure.