TWI565789B - 向列型液晶組成物 - Google Patents
向列型液晶組成物 Download PDFInfo
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- TWI565789B TWI565789B TW101127672A TW101127672A TWI565789B TW I565789 B TWI565789 B TW I565789B TW 101127672 A TW101127672 A TW 101127672A TW 101127672 A TW101127672 A TW 101127672A TW I565789 B TWI565789 B TW I565789B
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- C09K19/2007—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings linked by a chain containing carbon and oxygen atoms as chain links, e.g. esters or ethers the chain containing -COO- or -OCO- groups
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- C09K19/16—Non-steroidal liquid crystal compounds containing at least two non-condensed rings containing at least two benzene rings linked by a carbon chain the chain containing carbon-to-carbon double bonds, e.g. stilbenes
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Description
本發明係關於一種液晶組成物,其作為電光學的液晶顯示材料為有用的介電各向異性(anisotropyic)(△ε)顯示正值的向列型液晶組成物。
液晶顯示元件,在以時鐘、計算機為始,正逐漸被使用於各種測定機器、汽車用面板、文字處理機、電子記事本(electronic organizer)、印表機、電腦、電視、時鐘、廣告顯示板等。以液晶顯示方式而言,其代表性之物則有IPS(平面內切換(In-Plane switching))型/FFS型等,其特徵為VA型或水平配向,這種VA型或水平配向的特徵為使用TN(扭轉向列型)型、STN(超扭轉向列型)型、TFT(薄膜電晶體)的垂直配向。使用於該等液晶顯示元件之液晶組成物相對於水分、空氣、熱、光等外部因素則為穩定,又,謀求以室溫為中心盡可能以廣泛的溫度範圍顯示液晶相,為低黏性,且驅動電壓低者。進一步為了使相對於各個顯示元件組合最適合的介電各向異性(△ε)或/及折射率各向異性(△n)等成為最合適的值,液晶組成物係由數種類至數十種類之化合物所構成。
在垂直配向型顯示器中,係使用△ε為負的液晶組成物,在TN型、STN型或IPS型等之水平配向型顯示器中,係使用△ε為正的液晶組成物。近年來,在無外加電壓時使△ε為正的液晶組成物進行垂直配向,亦有報告提出藉由外加IPS型/FFS型電場而顯示之驅動方式,△ε為正的液
晶組成物之必要性係進一步提高。一方面,在全部的驅動方式中,謀求低電壓驅動、高速響應、廣泛作用溫度範圍。亦即,要求△ε為正且絕對值大、黏度(η)小,高向列相-各向同性液體相轉移溫度(Tni)。又,有必要由為△n與晶格間隙(cell gap)(d)之乘積的△n×d之設定,使液晶組成物之△n與晶格間隙一致並調節於適當的範圍。再加上將液晶顯示元件應用於電視等之情形,因高速響應性受到重視,故要求γ1小的液晶組成物。
作為液晶組成物之構成成分,雖有揭示使用△ε為正的液晶化合物之式(A-1)或(A-2)所示化合物的液晶組成物(專利文獻1至4),不過該等液晶組成物尚未能實現十分低的黏性。
[專利文獻1]WO96/032365號
[專利文獻2]日本特開平09-157202號
[專利文獻3]WO98/023564號
[專利文獻4]日本特開2003-183656號
本發明所欲解決之問題係提供一種液晶組成物,其藉由調整成所期望之折射率各向異性(△n),並抑制向列相-各向同性液體相轉移溫度(Tni)之減低及向列相下限溫度之上升,而不使向列相之溫度範圍惡化,並使黏度(η)充分地低,而且,介電各向異性(△ε)為正值的液晶組成物。
本發明人等,經研討各種氟苯衍生物,首先發現藉由組合特定之化合物,而解決該問題,臻至完成本件發明。
本發明係提供一種液晶組成物,且進一步提供使用該液晶組成物的液晶顯示元件。該液晶組成物具有正的介電各向異性,其特徵為該液晶組成物含有選自通式(LC0)所示化合物之一種或二種以上之化合物,且進一步含有選自通式(LC1)至通式(LC5)所示化合物之群組中一種或二種以上之化合物。
本發明之液晶組成物的△ε為正值,並具有其絕對值可變大的特徵。又η亦低,旋轉黏度(γ1)亦小,液晶性優異,在廣泛的溫度範圍顯示穩定的液晶相。再者,對於熱、光、水等,為化學上穩定、可在低電壓驅動之實用上可靠度極高的液晶組成物。
本案發明中液晶組成物含有選自該通式(LC0)所示化合物之一種或二種以上之化合物,且進一步含有選自包含通式(LC1)至通式(LC5)所示化合物之化合物群組中一種或二種以上之化合物。含有通式(LC0)所示化合物與通式(LC1)至通式(LC5)所示化合物的液晶組成物係因即使在低溫也顯示穩定的液晶相,故可為實用的液晶組成物。
該等通式(LC0)至通式(LC5)中,較佳為R01至R52係各自獨立地表示碳數1至8之烷基、碳數2至8之烯基或碳數1至8之烷氧基,較佳為直鏈。在R01至R52為烯基之情形下,較佳為選自式(R1)至式(R5)之任一者所示之基。
在A01、A11、A21、A31、A41、A51、A53為反式-1,4-伸環己基之情形下,該等為佳,更佳為式(R1)、式(R2)、式(R4)。再更佳為在通式(LC5)中的R51、R53之至少一者含有一種或二種以上的式(R1)至式(R5)中任一種之烯基的化合物。
A01至A42較佳為各自獨立地為反式-1,4-伸環己基、1,4-伸苯基、3-氟-1,4-伸苯基或3,5-二氟-1,4-伸苯基及四氫哌喃基。在A01至A42含有四氫哌喃基之情形下,較佳為A01、A11、A21及A31。以具體的較佳之具有四氫哌喃基之化合物而言,可例舉後述記載之通式(LC0-7)至通式(LC0-9)、通式(LC0-23)、通式(LC0-24)、通式(LC0-26)、通式(LC0-27)、通式(LC0-20)、通式(LC0-40)、通式(LC0-51)至通式(LC0-53)、通式(LC0-110)、通式(LC0-111)、通式(LC2-9)至通式(LC2-14)、通式(LC3-23)至通式(LC3-32)、通式(LC4-12)至通式(LC4-14)、通式(LC4-16)、通式(LC4-19)及通式(LC4-22)。在此情形下,含有選自該等化合物之群組中一種或二種以上之化合物者,用以解決本發明之問題則較恰當。
A51至A53較佳為各自獨立地為反式-1,4-伸環己基、1,4-伸苯基、3-氟-1,4-伸苯基或2-氟-1,4-伸苯基。
Z01及Z02較佳為各自獨立地為單鍵、-CH=CH-、-C≡C-、-CH2CH2-、-OCF2-或-CF2O-,在存在之Z01及Z02中一個表示-CH=CH-、-C≡C-、-CH2CH2-、-(CH2)4-、-OCF2-或-CF2O-之情形下,其他較佳為表示單鍵,更佳為全部表示單鍵。
Z31至Z42較佳為各自獨立地為單鍵、-CH=CH-、-C≡C-、-CH2CH2-、-OCH2-、-CH2O-、-OCF2-或-CF2O-,在存在之Z31至Z42之一個表示-CH=CH-、-C≡C-、-CH2CH2-、-(CH2)4-、-OCF2-或-CF2O-之情形下,其他較佳為單鍵。
Z51及Z52較佳為各自獨立地為單鍵、-CH=CH-、-C≡C-、-CH2CH2-、-OCF2-或-CF2O-,在存在之Z51及Z52之一個表示-CH=CH-、-C≡C-、-CH2CH2-、-(CH2)4-、-OCH2-、-CH2O-、-OCF2-或-CF2O-之情形下,其他較佳為單鍵,更佳為全部表示單鍵。
X01為F者,相對較大的介電各向異性(△ε)或同程度之介電各向異性(△ε),因成為顯著低的黏度(η)故特佳。
X11至X43較佳為各自獨立地為H或F,X11、X21、X31、及X41較佳為F。
Y01至Y41特佳為各自獨立地為F、CF3或OCF3。
m01至m51係可各自獨立地表示0至3之整數,不過m01+m02更佳為1或2,m21更佳為0,m31+m32更佳為1、2或3,m41+m42更佳為1或2。
通式(LC0)所示之液晶化合物更佳為下述通式(LC0-a)至(LC0-h)(式中,R01、A01、A02、A03、Z01、Z02、X01及Y01在通式(LC0)中表示相同意義;在A01、A03及/或Z01、Z02存在2個以上之情形下,各自可為相同亦可為相異)所示之化合物。
本發明之液晶組成物,作為通式(LC0)所示之化合物,較佳為含有一種或二種以上的(LC0-a)至(LC0-h)所示化合物。
進一步更佳為下述通式(LC0-1)至通式(LC0-111)
通式(LC2)所示之化合物更佳為下述通式(LC2-1)至通式(LC2-14)
(式中,X23、X24、X25及X26係各自獨立地表示氫原子、Cl、F、CF3或OCF3;X22、R21及Y21表示與通式(LC2)中相同意義)所示之化合物。通式(LC2-1)至通式(LC2-4)及通式(LC2-9)至通式(LC2-11)所示之化合物群組係更佳。
通式(LC3)所示之化合物更佳為下述通式(LC3-1)至通式(LC3-32)
(式中,X33、X34、X35、X36、X37及X38係各自獨立地表示H、Cl、F、CF3或OCF3;X32、R31、A31、Y31及Z31表示在通式(LC3)中同義)所示之化合物。其中更佳為將通式(LC3-5)、通式(LC3-15)、通式(LC3-20)至通式(LC3-32)所示之化合物群組與為本發明必須成分之通式(LC0)併用。又,更佳為將通式(LC3-20)及通式(LC3-21)中X33與X34為F之化合物群組及/或選自通式(LC3-25)、通式(LC3-26)、通式(LC3-30)至通式(LC3-32)之化合物群組中之化合物,與為本發明必須成分之通式(LC0)併用者。
通式(LC4)所示之化合物較佳為下述通式(LC4-1)至通式(LC4-23)
(式中,X44、X45、X46及X47係各自獨立地表示H、Cl、F、CF3或OCF3;X42、X43、R41及Y41表示與通式(LC4)中同義)所示之化合物。其中更佳為將通式(LC4-1)至通式(LC4-3)、通式(LC4-6)、通式(LC4-9)、通式(LC4-10)、通式(LC4-12)至通式(LC4-17)所示之化合物群組與為本發明必須成分之通式(LC0)併用。再更佳為將選自通式(LC4-9)至通式(LC4-11)及通式(LC4-15)至通式(LC4-17)中X44及或X45為F之化合物群組中之化合物,與本發明必須成分之通式(LC0)併用。
通式(LC5)所示之化合物較佳為下述通式(LC5-1)至通式(LC5-26)
(式中,R51及R52在通式(LC5)中表示相同意義)所示之化合物。其中更佳為將通式(LC5-1)至通式(LC5-8)、通式(LC5-14)、通式(LC5-16)、通式(LC5-18)至通式(LC5-26)所示之化合物群組與本發明必須成分之通式(LC0)併用。再更佳為通式(LC5-1)及通式(LC5-4)中的R51及R52之至
少一者為烯基之化合物群組,特佳為下述式(R1)至(R5)之任一烯基。
通式(LC5)所示之化合物含有一種或二種以上,含量較佳為20至70質量%,更佳為30至70質量%。
本發明之液晶組成物較佳為在20℃之黏度η為20mPa‧s以下。
本發明之液晶組成物可含有一種或二種以上的光學活性化合物。光學活性化合物只要是可扭轉液晶分子並配向者,則可使用任意之物。通常此種扭轉因溫度而變化,故為了獲得所期望之溫度仰賴性,亦可使用複數個光學活性化合物。為了設法不讓向列型液晶相之溫度範圍或黏度等產生不良影響,較佳為選擇使用扭轉效果強的光學活性化合物。作為此種光學活性化合物,具體言之,較佳為膽固醇壬酸酯(CN)等之液晶或下述通式(Ch-1)至通式(Ch-6)所示之化合物。
本發明之液晶組成物可含有一種或二種以上的聚合性化合物,聚合性化合物係將苯衍生物、聯伸三苯衍生物、參茚并苯(Truxene)衍生物、酞菁衍生物或環己烷衍生物作為分子之中心母核,並使直鏈之烷基、直鏈之烷氧基或取代苄醯氧基作為其側鏈,而較佳為取代成放射狀之結構的圓盤狀液晶化合物。
具體言之,聚合性化合物較佳為通式(PC)
更佳為聚合性化合物通式(PC)中MGp係以下述結構
在此,在Sp1及Sp2係各自獨立地表示伸烷基之情形下,該伸烷基可被1個以上之鹵素原子或CN所取代,存在於該基中之1個或2個以上的CH2基可被-O-、-S-、-NH-、-N(CH3)-、-CO-、-COO-、-OCO-、-OCOO-、-SCO-、-COS-或-C≡C-所替換,以不使氧原子直接鄰接。又,P1及P2較佳為各自獨立地為下述通式
更具體言之,聚合性化合物通式(PC)較佳為通式(PC0-1)至通式(PC0-6)
(PC0-3)P 1 -Sp 1 -Q p1 -MG p -Q p2 -Sp 2 -P 2
(PC0-4)P 1 -Q p1 -MG p -Q p2 -P 2
(PC0-5)P 1 -Sp 1 -Q p1 -MG p -R p1
(PC0-6)P 1 -Q p1 -MG p -R p1
(式中,p4係各自獨立地表示1、2或3)所示之聚合性化合物。更具體言之,較佳為通式(PC1-1)至通式(PC1-9)
又,通式(PC)中的MGp較佳為通式(PC1)-9所示之圓盤狀液晶化合物
聚合性化合物之使用量較佳為0.05至2.0質量%。
本發明之含有聚合性化合物之液晶組成物係聚合該聚合性化合物來製作液晶顯示元件。此時,可謀求減低未聚合成分至所期望量以下,相對於液晶組成物,較佳為含有在通式(LC0)中的部分結構具有聯苯基及/或聯三苯基之聚合性化合物。進一步具體言之,較佳為通式(LC0-4)至通式(LC0-6)、通式(LC0-10)至通式(LC0-16)、通式(LC0-27)至通式(LC0-107)所示之化合物,較佳為選擇一種或二種以上且含有0.1至40質量%者。又,較佳為在包含通式(PC1-1)至通式(PC1-3)、通式(PC1-8)或通式(PC1-9)所示聚合性化合物之群組中予以併用者。
該液晶組成物亦可進一步含有一種或二種以上的抗氧化劑,進一步亦可含有一種或二種以上的UV吸收劑。以抗氧化劑而言,較佳為自下述通式(E-1)及或通式(E-2)所示之中選擇者。
Ze1、Ze2係各自獨立地表示單鍵、-CH=CH-、-C≡C-、-CH2CH2-、-(CH2)4-、-COO-、-OCO-、-OCH2-、-CH2O-、-OCF2-或-CF2O-
E1表示環己烷環或苯環;環己烷環中1個或2個以上的-CH2-可被-O-所取代,以不使氧原子直接鄰接,又該環中1個或2個以上的-CH2CH2-可被-CH=CH-、-CF2O-或-OCF2-所取代,苯環中1個或2個以上的-CH=可被-N=所取代,以不使氮原子直接鄰接,該環中一個以上的氫原子可被F、Cl、CH3所取代;q1表示0、1、2或3)。
本發明之液晶組成物係可使用於例如:TN模式、OCB模式、ECB模式、IPS(包含FFS電極)模式或VA-IPS模式(包含FFS電極)作為液晶顯示元件,尤其是作為主動矩陣型驅動用液晶顯示元件。在此,VA-IPS模式係指電壓無外加時,將介電各向異性為正值的液晶材料(△ε>0)相對於基板面呈垂直配向,以配置於相同基板面上之像素電
極及通用電極,使液晶分子驅動之方法,在像素電極與通用電極發生之彎曲電場(curved electric field)之方向,液晶分子進行排列,故可容易形成像素分割或多域(multidomain),亦有對響應優異之好處。根據非專利文獻Proc.13th IDW,97(1997)、Proc.13th IDW,175(1997)、SID Sym.Digest,319(1998)、SID Sym.Digest,838(1998)、SID Sym.Digest,1085(1998)、SID Sym.Digest,334(2000)、Eurodisplay Proc.,142(2009),雖有EOC、VA-IPS等各種稱呼,不過在本發明係在以下簡稱為「VA-IPS」。
一般而言,在TN、ECB方式中的伏得列克轉變(Freedericksz transition)之底限電壓(Vc)係以式(I)
表示,在STN方式中係以式(II)
表示;VA方式係以式(III)表示。
(式中,Vc表示伏得列克轉變(V);II表示圓周率;dcell表示第一基板與第二基板之間隔(μm);dgap表示像素電極與通用電極(Common Electrode)之間隔(μm);dITO表示像素電極及/或通用電極之寬(μm);<r1>、<r2>、及<r3>表示
外推長度(extrapolation length)(μm);K11表示斜展彈性常數(splay elastic constant)(N);K22表示扭曲彈性常數(twist elastic constant)(N);K33表示彎曲彈性常數(bend elastic constant)(N);△ε表示介電率之各向異性)。
一方面,在VA-IPS方式中,本發明人等發現可適用式(IV)。
本發明之液晶組成物可調整成較佳之△ε、K11、K33。
液晶組成物之折射率各向異性(△n)與顯示裝置之第一基板及第二基板之間隔(d)之乘積(△n‧d)係與視角特性或響應速度有較強的關連。因此,間隔(d)傾向於薄至3至4μm。乘積(△n‧d)在TN模式、ECB模式、IPS模式之情形下,較佳為0.31至0.33。在VA-IPS模式中,相對於兩基板為垂直配向之情形,較佳為0.20至0.59,特佳為
0.30至0.40。如此藉由各種顯示元件模式之種類,因使乘積(△n‧d)之適性值不同,故謀求液晶組成物之折射率各向異性(△n)與0.070至0.110之範圍、0.100至0.140之範圍、或者0.130至0.180之範圍具有各自不同範圍之折射率各向異性(△n)之液晶組成物。在本發明之液晶組成物中,為了獲得小的或者比較小的折射率各向異性(△n),較佳為選擇包含通式(LC0-1)至通式(LC0-3)、通式(LC0-7)至通式(LC0-9)、通式(LC0-20)至通式(LC0-30)所示化合物之群組中之一種或二種以上,並含有0.1至80質量%,為了獲得較大的或者比較大的折射率各向異性(△n),較佳為選自包含通式(LC0-4)至通式(LC0-6)、通式(LC0-10)至通式(LC0-16)、通式(LC0-27)至通式(LC0-107)所示化合物之群組中之一種或二種以上,並含有0.1至60質量%。
無外加時之液晶配向在基板面必須為大致水平之TN模式、ECB模式情形之傾斜角較佳為0.5至7°,無外加時之液晶配向在基板面必須為大致垂直之VA-IP模式情形之傾斜角較佳為85至90°。如此為了使液晶組成物配向,可設置包含聚醯亞胺(PI)、聚醯胺、查耳酮、桂皮酸酯(cinnamate)或桂皮醯基等之配向膜。又,配向膜係較佳為使用光配向技術而製成之物。含有通式(LC0)中之X01為F之化合物的本發明之液晶組成物係配向膜之容易排列於軸,且易於控制所期望之傾斜角。
進一步,含有通式(PC)所示之化合物之本發明液晶組成物作為聚合性化合物係可提供在電壓外加下或者電
壓無外加下將含於該液晶組成物中之聚合性化合物予以聚合而製作的高分子穩定化之TN模式、OCB模式、ECB模式、IPS模式或VA-IPS模式用液晶顯示元件。
以下例舉實施例進一步詳述本發明,不過本發明並非限定於該等。又,在下述實施例及比較例之組成物中的「%」係指『質量%』之意。
液晶組成物之物性係以下述方式表示。
TN-I:向列相-各向同性液體相轉移溫度(℃)
T-n:向列相之下限溫度(℃)
ε ⊥:在25℃下相對於分子長軸方向之垂直方向之介電率
△ε:在25℃之介電各向異性
no:在25℃之相對於通常光(normal light)之折射率
△n:在25℃之折射率各向異性
Vth:在25℃下外加頻率1KHz之矩形波時在透過率變化
10%之晶格厚6μm之晶格之外加電壓(V)
η20:在20℃之體積黏度(bulk viscosity)(mPa‧s)
γ1:旋轉黏度(rotating viscosity)(mPa‧s)
在化合物記載係使用下述簡稱。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係將實施例3之通式(LC0)所示之化合物取代成具有作為連結基之-CF2O-之化合物的液晶組成物。以實施例3者遠為低黏度,γ1亦小,Tni亦高,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係將實施例3之通式(LC0)所示之化合物取代成具有作為連結基之-CH2O-的化合物之液晶組成物。以實施例3者遠為低黏度,γ1亦小,Tni亦高,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案之通式(LC0)所示化合物之液晶組成物。以實施例3者黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案通式(LC0)所示化合物之液晶組成物。以實施例4者黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物因含有本案之通式(LC0)、通式(LC2)及通式(LC5)所示之化合物,故即使在低△n系,亦可實現低黏度、小的γ1,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物因含有本案通式(LC0)所示之化合物,故即使△ε為大的系統,亦可在低△n實現低黏度、小的γ1,可知本發明之組合為非常優異之物。
如下述般調製以通式(LC5-1)、通式(LC5-4)及通式(LC5-7)所示之化合物所構成的液晶基質組成物A。
茲表示使用液晶基質組成物A而調製的液晶組成物及其物性值。
茲表示使用液晶組成物A而調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案通式(LC0)所示化合物之液晶組成物。以實施例9者黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
如此,實施例1至18之液晶組成物為低黏度、γ1亦小,可知本發明之組合為非常優異之物。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板、與不設置電極結構之第二基板,並在各自基板上形成垂直配向性之配向膜,製作第一基板與第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞注入實施例12所示液晶組成物,並製作液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.45v。又,外加5v時之響應速度為4.6毫秒
,電壓定為off時之響應速度為11.9秒。
藉由相對於實施例12所示液晶組成物99%,添加1%的式(PC-1)-3-1所示聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-A。CLC-A之物性與實施例12所示液晶組成物之物性大部分並無差異。
在上述IPS用空晶胞夾持CLC-A後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下的紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。調整晶胞表面之照射強度成為20mW/cm2,進行600秒照射,獲得使聚合性液晶組成物中的聚合性化合物聚合的垂直配向性液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.58v。又,外加5v時之響應速度為4.2毫秒。又,相較於在實施例12所示之僅以液晶組成物製作的液晶顯示元件,電壓定為off時之響應速度為4.7毫秒,則為非常快速者。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含實施例20之通式(LC0)所示化合物之液晶組成物。以實施例20者黏度遠為低、γ1亦小、Tni亦高,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案通式(LC0)所示化合物之液晶組成物。以實施例21者黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案通式(LC0)所示化合物之液晶組成物。以實施例21者為低電壓驅動且低黏度、γ1亦小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
如此,實施例3至9之液晶組成物為低黏度,γ1亦小,可知本發明之組合為非常優異之物。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板、與不設置電極結構之第二基板,在各自基板上形成垂直配向性之配向膜,製作第一基板與第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞注入實施例22所示液晶組成物,並製作液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.45v。又,外加5v時之響應速度為4.7毫秒,電壓定為off時之響應速度為16.2秒。
藉由相對於該實施例22所示之液晶組成物99%,添
加1%的式(PC-1)-3-1所示之聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-B。CLC-B之物性與實施例22所示液晶組成物之物性大部分並無差異。
在上述IPS用空晶胞夾持CLC-B後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下的紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。調整晶胞表面之照射強度成為20mW/cm2,照射600秒,獲得使聚合性液晶組成物中之聚合性化合物聚合之垂直配向性液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.71v。又,外加5v時之響應速度為4.6毫秒。又,相較於實施例22所示之僅以液晶組成物製作的液晶顯示元件,電壓定為off時之響應速度為4.2毫秒,為非常快速者。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含本案通式(LC0)所示化合物之液晶組成物。以實施例30者黏度遠為低、γ1亦小,可知
本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
如此,實施例31至38之液晶組成物為低黏度、γ1亦小,可知本發明之組合為非常優異之物。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板、與不設置電極結構之第二基板,在各自基板上形成垂直配向性之配向膜,製作第一基板及第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞注入實施例32所示液晶組成物,並製作液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.63v。又,外加5v時之響應速度為4.4毫秒,電壓定為off時之響應速度為12.3秒。
藉由相對於該實施例32所示液晶組成物99%,添加1%的式(PC-1)-3-1所示之聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-C。CLC-C之物性與實施例32所示液晶組成物之物性大部分並無差異。
在上述IPS用空晶胞中夾持CLC-C後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下的紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。進行調整以使晶胞表面之照射強度成為20mW/cm2,照射600秒,並獲得使聚合性液晶組成物中之聚合性化合物聚合之垂直配向性液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.86v。又外加5v時之響應速度為4.4毫秒。又,電壓定為off時之響應速度為4.3毫秒,相較於僅實施例32所示之液晶組成物製作的液晶顯示元件,為非常快速者。
調製含有通式(LC0)所示化合物之液晶組成物及不含有該化合物之液晶組成物,以下表示其物性值。
實施例1之液晶組成物含有本發明之通式(LC0-98)所示之化合物,而比較例10之液晶組成物係不含通式(LC0)所示化合物之液晶組成物。△ε及△n雖表示大致相同之值,不過以實施例1者,Tni大幅上升,液晶相之上限溫度大幅擴大,而且黏度變成約20%左右的小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
如此,實施例2至8之液晶組成物為低黏度、γ1亦小,可知本發明之組合為非常優異之物。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板與不設置電極結構之第二基板,在各自基板上形成垂直配向性之配向膜,製作第一基板及第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞中注入實施例44所示之液晶組成物,並製作液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.33v。又外加5v時之響應速度為4.4毫秒、電壓定為off時之響應速度為11.9秒。
藉由相對於該實施例45所示之液晶組成物99%,添加1%的式(PC-1)-3-1所示之聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-D。CLC-D之物性與實施例44所示之液晶組成物之物性大部分並無差異。
在上述IPS用空晶胞夾持CLC-D後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下之紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。調整晶胞表面之照射強度成為20mW/cm2並照射600秒,獲得使聚合性液晶組成物中聚合性化合物聚合之垂直配向性液晶顯示元件。在測定了該顯示元件之電光學特性,則透過率變化10%之外加電壓為1.36v。又,外加5v時之響應速度
為4.5毫秒。又,與實施例44所示之僅以液晶組成物製作的液晶顯示元件比較,電壓定為off時之響應速度為4.6毫秒,則為非常快速者。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含有本案之具有-Ph3-OCH2-之部分結構之通式(LC0)所示化合物之液晶組成物。以實施例1者,儘管是大的介電各向異性(△ε)且高的向列相-各向同性液體相轉移溫度(Tni),但是黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板、與不設置電極結構之第二基板,在各自基板上形成垂直配向性之配向膜,製作第一基板與第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞中注入實施例49所示之液晶組成物,並製作液晶顯示元件。
藉由相對於該實施例49所示之液晶組成物99%,添加1%的式(PC-1)-3-1所示之聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-E。CLC-E之物性與實施例49所示之液晶組成物之物性大部分並無差異。
在上述IPS用空晶胞夾持CLC-E後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下之紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。進行調整以使晶胞表面之照射強度成為20mW/cm2,並照射600秒,獲得使聚合性液晶組成物中聚合性化合物聚合之垂直配向性液晶顯示元件。該顯示元件,相較於僅以實施例49所示液晶組成物製作的液晶顯示元件,為非常快速之響應速度。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
該液晶組成物係不含有本案之具有-Ph3-OCH2-之部分結構的通式(LC0)所示化合物之液晶組成物。以實施例1者,儘管是大的介電各向異性(△ε)且高的向列相-各向同性液體相轉移溫度(Tni),不過黏度遠為低,γ1亦小,可知本發明之組合為非常優異之物。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
茲表示調製的液晶組成物及其物性值如下。
使用設置一對梳子形電極結構之透明電極於相同基板之第一基板、與不設置電極結構之第二基板,在各自基板上形成垂直配向性之配向膜,製作第一基板與第二基板為間隙間隔4.0微米之IPS用空晶胞。在該空晶胞中注入實施例60所示之液晶組成物,並製作液晶顯示元件。
藉由相對於該實施例60所示液晶組成物99%,添加1%的式(PC-1)-3-1所示聚合性化合物,
予以均勻溶解,來調製聚合性液晶組成物CLC-F。CLC-F之物性與實施例60所示之液晶組成物之物性大部分並無
差異。在上述IPS用空晶胞中夾持CLC-F後,以頻率1KHz外加1.8V之矩形波,同時經由切割300nm以下的紫外線之濾光器,以高壓汞燈照射紫外線於液晶晶胞。進行調整以使晶胞表面之照射強度成為20mW/cm2,照射600秒,獲得使聚合性液晶組成物中之聚合性化合物聚合之垂直配向性液晶顯示元件。相較於實施例60所示之僅以液晶組成物製作的液晶顯示元件,該顯示元件為非常快速之響應速度。
Claims (22)
- 一種液晶組成物,其具有正的介電各向異性(dielectric anisotropy),其特徵為該液晶組成物含有選自通式(LC0)所示化合物之一種或二種以上之化合物,且進一步含有選自通式(LC1)至通式(LC5)所示化合物群組中一種或二種以上之化合物,
- 如申請專利範圍第1項之液晶組成物,其含有選自通式(LC0)所示化合物之一種或二種以上之化合物,且進一步含有選自通式(LC1)至通式(LC4)所示化合物群組之一種或二種以上之化合物,再進一步含有選自通式(LC5)所示化合物群組之一種或二種以上之化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含通式(LC2-1)至通式(LC2-14)所示化合物群組中一種或二種以上之化合物作為通式(LC2)所示化合物,
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含通式(LC3-1)至通式(LC3-32)所示化合物群組中一種或二種以上之化合物作為通式(LC3)所示化合物,
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含通式(LC4-1)至通式(LC4-23)所示化合物群組中一種或二種以上之化合物作為通式(LC4)所示化合物,
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含通式(LC5-1)至通式(LC5-26)所示化合物群組中一種或二種以上之化合物作為通式(LC5)所示化合物,
- 如申請專利範圍第1或2項之液晶組成物,其含有一種或二種以上的光學活性化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有選自R01至R52為碳數2至5之烯基的通式(LC0)至通式(LC5)所示化合物群組中一種或二種以上之化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含下列化合物之群組中一種或二種以上之化合物:存在於通式(LC0)之A01至A03中至少一種為四氫哌喃-2,5-二基之化合物;在通式(LC1)中之A11為四氫哌喃-2,5-二基之化合物;存在於通式(LC2)之A21至A23中至少一種為四氫哌喃-2,5-二基之化合物;存在於通式(LC3)之A31至A32中至少一種為四氫哌喃-2,5-二基之化合物;存在於通式(LC4)之A41至A42中至少一種為四氫哌喃-2,5-二基之化合物及存在於通式(LC5)之A51至A53中至少一種為四氫哌喃-2,5-二基之化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有選自包含下列化合物之群組中一種或二種以上之化合物:存在於通式(LC0)之Z01至Z02中至少一種為-CF2O-或-OCF2-之化合物;存在於通式(LC3)之Z31至Z32中至少一種為-CF2O-或-OCF2-之化合物;存在於通式(LC4)之Z41至Z42中至少一種為-CF2O-或-OCF2-之化合物及存在於通式(LC5)之Z51至Z52中至少一種為-CF2O-或-OCF2-之化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有30至70質量%的通式(LC5)所示化合物,且液晶組成物在20℃之黏度η為20mPa‧s以下。
- 如申請專利範圍第1或2項之液晶組成物,其含有一種或二種以上的聚合性化合物。
- 如申請專利範圍第1或2項之液晶組成物,其含有一種或二種以上的抗氧化劑。
- 如申請專利範圍第1或2項之液晶組成物,其含有一種或二種以上的UV吸收劑。
- 一種液晶顯示元件,其使用如申請專利範圍第1至14項中任一項之液晶組成物。
- 一種主動矩陣型驅動用液晶顯示元件,其使用如申請專利範圍第1至14項中任一項之液晶組成物。
- 一種下N模式、OCB模式、ECB模式、IPS模式或VA-IPS模式用液晶顯示元件,其係使用如申請專利範圍第1至14項中任一項之液晶組成物。
- 一種TN模式、OCB模式、ECB模式、IPS模式或VA-IPS模式用液晶顯示元件,其係使用如申請專利範圍第12項之液晶組成物,在外加電壓下或者無外加電壓下,將該液晶組成物中含有之聚合性化合物予以聚合而製作的高分子穩定化之液晶顯示元件。
- 如申請專利範圍第15至18項中任一項之液晶顯示元件,其中在與液晶分子接觸之面將該液晶分子進行水平、傾斜或垂直配向之配向層係含有選自聚醯亞胺(PI)、聚醯胺、查耳酮、桂皮酸酯或桂皮醯基之至少一種化合物的配向膜。
- 如申請專利範圍第19項之液晶顯示元件,其中在配向層,進一步含有聚合性液晶化合物及聚合性非液晶化合物中之任一種以上。
- 如申請專利範圍第19項之液晶顯示元件,其中作為與液晶組成物接觸之面之配向層,係設置使用光配向技術而製作的配向膜。
- 如申請專利範圍第20項之液晶顯示元件,其中作為與液晶組成物接觸之面之配向層,係設置使用光配向技術而製作的配向膜。
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- 2012-07-31 CN CN201510152301.0A patent/CN104861988B/zh active Active
- 2012-07-31 JP JP2012551016A patent/JP5376269B2/ja active Active
- 2012-07-31 KR KR1020147002445A patent/KR101488314B1/ko active IP Right Grant
- 2012-07-31 CN CN201280038280.4A patent/CN103717708B/zh active Active
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TW201313882A (zh) | 2013-04-01 |
WO2013018796A1 (ja) | 2013-02-07 |
CN104861988B (zh) | 2017-05-24 |
JP5376269B2 (ja) | 2013-12-25 |
CN103717708A (zh) | 2014-04-09 |
US20140225036A1 (en) | 2014-08-14 |
JPWO2013018796A1 (ja) | 2015-03-05 |
KR20140031383A (ko) | 2014-03-12 |
US9039929B2 (en) | 2015-05-26 |
CN104861988A (zh) | 2015-08-26 |
CN103717708B (zh) | 2017-03-22 |
KR101488314B1 (ko) | 2015-01-30 |
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