TWI563640B - Array substrate of display panel - Google Patents
Array substrate of display panelInfo
- Publication number
- TWI563640B TWI563640B TW103128987A TW103128987A TWI563640B TW I563640 B TWI563640 B TW I563640B TW 103128987 A TW103128987 A TW 103128987A TW 103128987 A TW103128987 A TW 103128987A TW I563640 B TWI563640 B TW I563640B
- Authority
- TW
- Taiwan
- Prior art keywords
- display panel
- array substrate
- array
- substrate
- panel
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103128987A TWI563640B (en) | 2014-08-22 | 2014-08-22 | Array substrate of display panel |
US14/529,099 US9728554B2 (en) | 2014-08-22 | 2014-10-30 | Array substrate of display panel |
JP2015056806A JP6002265B2 (ja) | 2014-08-22 | 2015-03-19 | 表示パネルのアレイ基板 |
KR1020150042455A KR101701599B1 (ko) | 2014-08-22 | 2015-03-26 | 디스플레이 패널의 어레이 기판 |
US15/643,439 US10644034B2 (en) | 2014-08-22 | 2017-07-06 | Array substrate of display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103128987A TWI563640B (en) | 2014-08-22 | 2014-08-22 | Array substrate of display panel |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201608707A TW201608707A (zh) | 2016-03-01 |
TWI563640B true TWI563640B (en) | 2016-12-21 |
Family
ID=55348950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103128987A TWI563640B (en) | 2014-08-22 | 2014-08-22 | Array substrate of display panel |
Country Status (4)
Country | Link |
---|---|
US (2) | US9728554B2 (zh) |
JP (1) | JP6002265B2 (zh) |
KR (1) | KR101701599B1 (zh) |
TW (1) | TWI563640B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955765A (en) * | 1996-03-15 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film dual gate, common channel semiconductor device having a single first gate and a multi-gate second gate structure |
TW548821B (en) * | 2002-06-21 | 2003-08-21 | Wintek Corp | Design method for avoiding ESD by ITO layout and resistance regulation |
TW200415427A (en) * | 2003-02-14 | 2004-08-16 | Quanta Display Inc | A two TFT pixel structure liquid crystal display |
CN101194276A (zh) * | 2005-05-27 | 2008-06-04 | 株式会社半导体能源研究所 | 半导体器件 |
US20120319237A1 (en) * | 2011-06-20 | 2012-12-20 | International Business Machines Corporation | Corner-rounded structures and methods of manufacture |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243963A (ja) * | 1999-02-17 | 2000-09-08 | Sanyo Electric Co Ltd | 薄膜トランジスタ及び表示装置 |
TW480554B (en) * | 1999-07-22 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP2001196594A (ja) * | 1999-08-31 | 2001-07-19 | Fujitsu Ltd | 薄膜トランジスタ、液晶表示用基板及びその製造方法 |
US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
US7483001B2 (en) * | 2001-11-21 | 2009-01-27 | Seiko Epson Corporation | Active matrix substrate, electro-optical device, and electronic device |
JP4842017B2 (ja) * | 2005-05-30 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5147196B2 (ja) * | 2005-06-01 | 2013-02-20 | 株式会社半導体エネルギー研究所 | 素子基板 |
US7675796B2 (en) | 2005-12-27 | 2010-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007201437A (ja) | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP5909198B2 (ja) | 2013-01-21 | 2016-04-26 | 株式会社ジャパンディスプレイ | 液晶表示パネル及び電子機器 |
JP2014149322A (ja) | 2013-01-30 | 2014-08-21 | Japan Display Inc | 液晶表示パネル及び電子機器 |
KR102049444B1 (ko) * | 2013-05-10 | 2019-11-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 유기 발광 표시 장치 제조용 포토 마스크 |
KR102189223B1 (ko) * | 2014-07-10 | 2020-12-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 그 구동 방법 및 제조 방법 |
-
2014
- 2014-08-22 TW TW103128987A patent/TWI563640B/zh active
- 2014-10-30 US US14/529,099 patent/US9728554B2/en active Active
-
2015
- 2015-03-19 JP JP2015056806A patent/JP6002265B2/ja active Active
- 2015-03-26 KR KR1020150042455A patent/KR101701599B1/ko active IP Right Grant
-
2017
- 2017-07-06 US US15/643,439 patent/US10644034B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955765A (en) * | 1996-03-15 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin-film dual gate, common channel semiconductor device having a single first gate and a multi-gate second gate structure |
TW548821B (en) * | 2002-06-21 | 2003-08-21 | Wintek Corp | Design method for avoiding ESD by ITO layout and resistance regulation |
TW200415427A (en) * | 2003-02-14 | 2004-08-16 | Quanta Display Inc | A two TFT pixel structure liquid crystal display |
CN101194276A (zh) * | 2005-05-27 | 2008-06-04 | 株式会社半导体能源研究所 | 半导体器件 |
US20120319237A1 (en) * | 2011-06-20 | 2012-12-20 | International Business Machines Corporation | Corner-rounded structures and methods of manufacture |
Also Published As
Publication number | Publication date |
---|---|
US10644034B2 (en) | 2020-05-05 |
KR20160023544A (ko) | 2016-03-03 |
KR101701599B1 (ko) | 2017-02-01 |
JP2016045486A (ja) | 2016-04-04 |
US20160056182A1 (en) | 2016-02-25 |
JP6002265B2 (ja) | 2016-10-05 |
US9728554B2 (en) | 2017-08-08 |
US20170309648A1 (en) | 2017-10-26 |
TW201608707A (zh) | 2016-03-01 |
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