TWI563573B - Fin-like field-effect transistor (finfet) device and method for fabricating the same - Google Patents

Fin-like field-effect transistor (finfet) device and method for fabricating the same

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Publication number
TWI563573B
TWI563573B TW104102647A TW104102647A TWI563573B TW I563573 B TWI563573 B TW I563573B TW 104102647 A TW104102647 A TW 104102647A TW 104102647 A TW104102647 A TW 104102647A TW I563573 B TWI563573 B TW I563573B
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TW
Taiwan
Prior art keywords
finfet
fabricating
fin
field
same
Prior art date
Application number
TW104102647A
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English (en)
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TW201541525A (zh
Inventor
Kuo Cheng Ching
Ka-Hing Fung
Chih Sheng Chang
Zhiqiang Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
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Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201541525A publication Critical patent/TW201541525A/zh
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Publication of TWI563573B publication Critical patent/TWI563573B/zh

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TW201541525A (zh) 2015-11-01
US9209185B2 (en) 2015-12-08

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