TWI563350B - Substrate and patterning device for use in metrology, metrology method and device manufacturing method - Google Patents

Substrate and patterning device for use in metrology, metrology method and device manufacturing method

Info

Publication number
TWI563350B
TWI563350B TW104113769A TW104113769A TWI563350B TW I563350 B TWI563350 B TW I563350B TW 104113769 A TW104113769 A TW 104113769A TW 104113769 A TW104113769 A TW 104113769A TW I563350 B TWI563350 B TW I563350B
Authority
TW
Taiwan
Prior art keywords
metrology
substrate
device manufacturing
patterning device
patterning
Prior art date
Application number
TW104113769A
Other languages
English (en)
Other versions
TW201546569A (zh
Inventor
Richard Quintanilha
Willem Marie Julia Marcel Coene
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW201546569A publication Critical patent/TW201546569A/zh
Application granted granted Critical
Publication of TWI563350B publication Critical patent/TWI563350B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW104113769A 2014-05-13 2015-04-29 Substrate and patterning device for use in metrology, metrology method and device manufacturing method TWI563350B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14168067 2014-05-13

Publications (2)

Publication Number Publication Date
TW201546569A TW201546569A (zh) 2015-12-16
TWI563350B true TWI563350B (en) 2016-12-21

Family

ID=50693516

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104113769A TWI563350B (en) 2014-05-13 2015-04-29 Substrate and patterning device for use in metrology, metrology method and device manufacturing method

Country Status (8)

Country Link
US (1) US9915879B2 (zh)
JP (1) JP6412163B2 (zh)
KR (1) KR101901770B1 (zh)
CN (1) CN106462078B (zh)
IL (1) IL248489B (zh)
NL (1) NL2014647A (zh)
TW (1) TWI563350B (zh)
WO (1) WO2015172963A1 (zh)

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CN109073568B (zh) * 2016-04-29 2022-01-11 Asml荷兰有限公司 用于确定结构的特性的方法和装置、器件制造方法
EP3321737A1 (en) * 2016-11-10 2018-05-16 ASML Netherlands B.V. Method for determining an optimized set of measurement locations for measurement of a parameter of a lithographic process, metrology system
EP3361315A1 (en) 2017-02-09 2018-08-15 ASML Netherlands B.V. Inspection apparatus and method of inspecting structures
EP3370486A1 (en) 2017-03-02 2018-09-05 ASML Netherlands B.V. Radiation source
EP3396458A1 (en) * 2017-04-28 2018-10-31 ASML Netherlands B.V. Method and apparatus for optimization of lithographic process
EP3404488A1 (en) 2017-05-19 2018-11-21 ASML Netherlands B.V. Method of measuring a target, metrology apparatus, lithographic cell, and target
IL270977B2 (en) 2017-05-31 2024-01-01 Asml Netherlands Bv Methods and device for predicting performance of measurement method, measurement method and device
EP3410211A1 (en) 2017-05-31 2018-12-05 Stichting VU Methods and apparatus for predicting performance of a measurement method, measurement method and apparatus
KR102340174B1 (ko) * 2017-06-20 2021-12-16 에이에스엠엘 네델란즈 비.브이. 엣지 러프니스 파라미터 결정
EP3467589A1 (en) 2017-10-06 2019-04-10 ASML Netherlands B.V. Determining edge roughness parameters
EP3435161A1 (en) 2017-07-24 2019-01-30 ASML Netherlands B.V. Determining an edge roughness parameter of a periodic structure
EP3441820A1 (en) 2017-08-11 2019-02-13 ASML Netherlands B.V. Methods and apparatus for determining the position of a spot of radiation and inspection apparatus
US10983227B2 (en) * 2017-08-14 2021-04-20 Kla-Tencor Corporation On-device metrology using target decomposition
KR20230147216A (ko) * 2017-11-29 2023-10-20 케이엘에이 코포레이션 디바이스 검사 시스템을 사용한 오버레이 에러의 측정
EP3521930A1 (en) * 2018-02-02 2019-08-07 ASML Netherlands B.V. Method of optimizing a metrology process
EP3598235A1 (en) * 2018-07-18 2020-01-22 ASML Netherlands B.V. Metrology apparatus and method for determining a characteristic relating to one or more structures on a substrate
WO2020141092A1 (en) 2018-12-31 2020-07-09 Asml Netherlands B.V. In-die metrology methods and systems for process control
EP3686673A1 (en) 2019-01-25 2020-07-29 ASML Netherlands B.V. Wavefront sensor and associated metrology apparatus
US11468656B2 (en) * 2019-06-29 2022-10-11 Intel Corporation Hierarchical graph-based domain selection algorithm to improve diversity
US11914290B2 (en) 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
CN110531591B (zh) * 2019-08-30 2021-11-26 上海华力微电子有限公司 套刻精度修正方法
IL279727A (en) * 2019-12-24 2021-06-30 Asml Netherlands Bv Method of determining information about pattern procedure, method of error reduction in measurement data, metrology process calibration method, method of selecting metrology targets
WO2021144066A1 (en) * 2020-01-16 2021-07-22 Asml Netherlands B.V. Substrate, patterning device and lithographic apparatuses
WO2023117610A1 (en) * 2021-12-23 2023-06-29 Asml Netherlands B.V. Generating an alignment signal without dedicated alignment structures

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US20130304424A1 (en) * 2012-05-08 2013-11-14 Kla-Tencor Corporation Metrology Tool With Combined X-Ray And Optical Scatterometers

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Also Published As

Publication number Publication date
TW201546569A (zh) 2015-12-16
JP2017516138A (ja) 2017-06-15
CN106462078A (zh) 2017-02-22
JP6412163B2 (ja) 2018-10-24
US20150331336A1 (en) 2015-11-19
WO2015172963A1 (en) 2015-11-19
CN106462078B (zh) 2018-10-02
IL248489B (en) 2020-06-30
US9915879B2 (en) 2018-03-13
KR101901770B1 (ko) 2018-09-27
IL248489A0 (en) 2016-12-29
NL2014647A (en) 2016-03-31
KR20160145819A (ko) 2016-12-20

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