TWI562344B - Image sensing devie and method for fabricating the same - Google Patents
Image sensing devie and method for fabricating the sameInfo
- Publication number
- TWI562344B TWI562344B TW104120259A TW104120259A TWI562344B TW I562344 B TWI562344 B TW I562344B TW 104120259 A TW104120259 A TW 104120259A TW 104120259 A TW104120259 A TW 104120259A TW I562344 B TWI562344 B TW I562344B
- Authority
- TW
- Taiwan
- Prior art keywords
- devie
- fabricating
- same
- image sensing
- sensing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/463,938 US9640576B2 (en) | 2014-08-20 | 2014-08-20 | Image sensing device and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201608712A TW201608712A (zh) | 2016-03-01 |
TWI562344B true TWI562344B (en) | 2016-12-11 |
Family
ID=55348955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104120259A TWI562344B (en) | 2014-08-20 | 2015-06-24 | Image sensing devie and method for fabricating the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US9640576B2 (zh) |
JP (1) | JP2016046510A (zh) |
CN (1) | CN105390511B (zh) |
TW (1) | TWI562344B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431624B2 (en) * | 2015-07-08 | 2019-10-01 | Samsung Electronics Co., Ltd. | Method of manufacturing image sensor including nanostructure color filter |
KR20190119970A (ko) | 2018-04-13 | 2019-10-23 | 삼성전자주식회사 | 이미지 센서 및 전자 장치 |
US20190339422A1 (en) * | 2018-05-03 | 2019-11-07 | Visera Technologies Company Limited | Method for forming micro-lens array and photomask therefor |
US10880467B2 (en) * | 2018-06-25 | 2020-12-29 | Omnivision Technologies, Inc. | Image sensors with phase detection auto-focus pixels |
US10684400B2 (en) * | 2018-08-03 | 2020-06-16 | Visera Technologies Company Limited | Optical elements and method for fabricating the same |
KR102649313B1 (ko) | 2019-02-13 | 2024-03-20 | 삼성전자주식회사 | 이미지 센서 |
US11569291B2 (en) * | 2020-11-05 | 2023-01-31 | Visera Technologies Company Limited | Image sensor and method forming the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090230394A1 (en) * | 2008-03-12 | 2009-09-17 | Omnivision Technologies, Inc. | Image sensor array with conformal color filters |
US20110279727A1 (en) * | 2010-02-25 | 2011-11-17 | Nikon Corporation | Backside illumination image sensor and image-capturing device |
US20120044395A1 (en) * | 2010-08-20 | 2012-02-23 | Andrea Del Monte | Image sensors with antireflective layers |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58219748A (ja) * | 1982-06-15 | 1983-12-21 | Toshiba Corp | 半導体装置 |
JP2601148B2 (ja) | 1993-07-23 | 1997-04-16 | 日本電気株式会社 | 固体撮像装置 |
JPH09116127A (ja) | 1995-10-24 | 1997-05-02 | Sony Corp | 固体撮像装置 |
JP2004079608A (ja) * | 2002-08-12 | 2004-03-11 | Sanyo Electric Co Ltd | 固体撮像装置および固体撮像装置の製造方法 |
JP2006196634A (ja) | 2005-01-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | カラー固体撮像装置の製造方法 |
JP2009026808A (ja) * | 2007-07-17 | 2009-02-05 | Fujifilm Corp | 固体撮像装置 |
JP2012074521A (ja) * | 2010-09-28 | 2012-04-12 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
JP2013021168A (ja) * | 2011-07-12 | 2013-01-31 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
JP5845856B2 (ja) * | 2011-11-30 | 2016-01-20 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
KR101352433B1 (ko) * | 2012-04-04 | 2014-01-24 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
JP2014154662A (ja) * | 2013-02-07 | 2014-08-25 | Sony Corp | 固体撮像素子、電子機器、および製造方法 |
JP6166640B2 (ja) * | 2013-10-22 | 2017-07-19 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
-
2014
- 2014-08-20 US US14/463,938 patent/US9640576B2/en active Active
-
2015
- 2015-01-15 JP JP2015005590A patent/JP2016046510A/ja active Pending
- 2015-06-24 TW TW104120259A patent/TWI562344B/zh active
- 2015-07-06 CN CN201510390305.2A patent/CN105390511B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090230394A1 (en) * | 2008-03-12 | 2009-09-17 | Omnivision Technologies, Inc. | Image sensor array with conformal color filters |
US20110279727A1 (en) * | 2010-02-25 | 2011-11-17 | Nikon Corporation | Backside illumination image sensor and image-capturing device |
US20120044395A1 (en) * | 2010-08-20 | 2012-02-23 | Andrea Del Monte | Image sensors with antireflective layers |
Also Published As
Publication number | Publication date |
---|---|
JP2016046510A (ja) | 2016-04-04 |
US9640576B2 (en) | 2017-05-02 |
TW201608712A (zh) | 2016-03-01 |
US20160056193A1 (en) | 2016-02-25 |
CN105390511B (zh) | 2019-03-01 |
CN105390511A (zh) | 2016-03-09 |
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