TWI560808B - Wafer dicing using hybrid galvanic laser scribing process with plasma etch - Google Patents

Wafer dicing using hybrid galvanic laser scribing process with plasma etch

Info

Publication number
TWI560808B
TWI560808B TW101121144A TW101121144A TWI560808B TW I560808 B TWI560808 B TW I560808B TW 101121144 A TW101121144 A TW 101121144A TW 101121144 A TW101121144 A TW 101121144A TW I560808 B TWI560808 B TW I560808B
Authority
TW
Taiwan
Prior art keywords
plasma etch
laser scribing
scribing process
wafer dicing
hybrid
Prior art date
Application number
TW101121144A
Other languages
English (en)
Other versions
TW201304067A (zh
Inventor
Wei-Sheng Lei
Saravjeet Singh
Madhava Rao Yalamanchili
Brad Eaton
Ajay Kumar
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201304067A publication Critical patent/TW201304067A/zh
Application granted granted Critical
Publication of TWI560808B publication Critical patent/TWI560808B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/02—Carriages for supporting the welding or cutting element
    • B23K37/0247—Driving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
TW101121144A 2011-06-15 2012-06-13 Wafer dicing using hybrid galvanic laser scribing process with plasma etch TWI560808B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/161,006 US20120322235A1 (en) 2011-06-15 2011-06-15 Wafer dicing using hybrid galvanic laser scribing process with plasma etch

Publications (2)

Publication Number Publication Date
TW201304067A TW201304067A (zh) 2013-01-16
TWI560808B true TWI560808B (en) 2016-12-01

Family

ID=47353992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101121144A TWI560808B (en) 2011-06-15 2012-06-13 Wafer dicing using hybrid galvanic laser scribing process with plasma etch

Country Status (6)

Country Link
US (1) US20120322235A1 (zh)
JP (1) JP6081993B2 (zh)
KR (1) KR101920343B1 (zh)
CN (1) CN103703546A (zh)
TW (1) TWI560808B (zh)
WO (1) WO2012173791A2 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343365B2 (en) * 2011-03-14 2016-05-17 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
TWI511195B (zh) * 2013-12-24 2015-12-01 Ind Tech Res Inst 半導體晶片之精確破斷法與其破斷系統
US9018079B1 (en) * 2014-01-29 2015-04-28 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean
US20150287638A1 (en) * 2014-04-04 2015-10-08 Jungrae Park Hybrid wafer dicing approach using collimated laser scribing process and plasma etch
US9076860B1 (en) * 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
US9165832B1 (en) * 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
US9159624B1 (en) * 2015-01-05 2015-10-13 Applied Materials, Inc. Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach
US9330977B1 (en) * 2015-01-05 2016-05-03 Applied Materials, Inc. Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process
JP6510829B2 (ja) * 2015-02-05 2019-05-08 株式会社ディスコ レーザー加工装置
CN104966701A (zh) * 2015-07-14 2015-10-07 华进半导体封装先导技术研发中心有限公司 一种晶圆级封装用保护封盖及其制作方法
JP2018529527A (ja) * 2015-10-07 2018-10-11 コーニング インコーポレイテッド レーザー切断する予定の被覆基板をレーザーで前処理する方法
US11701739B2 (en) * 2019-04-12 2023-07-18 Skyworks Solutions, Inc. Method of optimizing laser cutting of wafers for producing integrated circuit dies
CN110190010B (zh) * 2019-05-17 2024-04-23 福建兆元光电有限公司 半导体晶片划片装置及划片方法
JP7281709B2 (ja) * 2019-05-30 2023-05-26 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

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US20040180473A1 (en) * 2003-03-11 2004-09-16 Akihito Kawai Method of dividing a semiconductor wafer
US20070272666A1 (en) * 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
US20090255911A1 (en) * 2008-04-10 2009-10-15 Applied Materials, Inc. Laser scribing platform and hybrid writing strategy
US20100173474A1 (en) * 2007-02-08 2010-07-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor chip

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US4684437A (en) * 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
JP2000243721A (ja) * 1999-02-19 2000-09-08 Toshiba Corp 半導体装置の製造装置
ATE537558T1 (de) * 2001-10-01 2011-12-15 Electro Scient Ind Inc Bearbeiten von substraten, insbesondere von halbleitersubstraten
AU2003246348A1 (en) * 2002-02-25 2003-09-09 Disco Corporation Method for dividing semiconductor wafer
TWI221102B (en) * 2002-08-30 2004-09-21 Sumitomo Heavy Industries Laser material processing method and processing device
JP4583004B2 (ja) * 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
JP3764155B2 (ja) * 2003-10-23 2006-04-05 住友重機械工業株式会社 レーザ加工方法及びレーザ加工装置
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JP4018088B2 (ja) * 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
JP4741822B2 (ja) * 2004-09-02 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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JP2006159254A (ja) * 2004-12-07 2006-06-22 Disco Abrasive Syst Ltd レーザー加工装置
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US20040180473A1 (en) * 2003-03-11 2004-09-16 Akihito Kawai Method of dividing a semiconductor wafer
US20070272666A1 (en) * 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
US20100173474A1 (en) * 2007-02-08 2010-07-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor chip
US20090255911A1 (en) * 2008-04-10 2009-10-15 Applied Materials, Inc. Laser scribing platform and hybrid writing strategy

Also Published As

Publication number Publication date
CN103703546A (zh) 2014-04-02
WO2012173791A3 (en) 2013-03-14
JP2014523115A (ja) 2014-09-08
JP6081993B2 (ja) 2017-02-15
TW201304067A (zh) 2013-01-16
KR101920343B1 (ko) 2018-11-20
US20120322235A1 (en) 2012-12-20
KR20140039048A (ko) 2014-03-31
WO2012173791A2 (en) 2012-12-20

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