HK1172152A1 - 使用切割道蝕刻的晶圓切片 - Google Patents
使用切割道蝕刻的晶圓切片Info
- Publication number
- HK1172152A1 HK1172152A1 HK12112732.4A HK12112732A HK1172152A1 HK 1172152 A1 HK1172152 A1 HK 1172152A1 HK 12112732 A HK12112732 A HK 12112732A HK 1172152 A1 HK1172152 A1 HK 1172152A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- scribe line
- wafer dicing
- line etch
- etch
- dicing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/954,151 US8071429B1 (en) | 2010-11-24 | 2010-11-24 | Wafer dicing using scribe line etch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1172152A1 true HK1172152A1 (zh) | 2013-04-12 |
Family
ID=45034383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK12112732.4A HK1172152A1 (zh) | 2010-11-24 | 2012-12-10 | 使用切割道蝕刻的晶圓切片 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8071429B1 (zh) |
| CN (1) | CN102544035B (zh) |
| HK (1) | HK1172152A1 (zh) |
| TW (1) | TWI449096B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI546910B (zh) * | 2010-02-26 | 2016-08-21 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
| US8809120B2 (en) * | 2011-02-17 | 2014-08-19 | Infineon Technologies Ag | Method of dicing a wafer |
| EP2530709B1 (en) * | 2011-06-03 | 2015-09-09 | Nxp B.V. | Method of producing a semiconductor wafer |
| US9847445B2 (en) * | 2012-04-05 | 2017-12-19 | Koninklijke Philips N.V. | LED thin-film device partial singulation prior to substrate thinning or removal |
| US9266192B2 (en) | 2012-05-29 | 2016-02-23 | Electro Scientific Industries, Inc. | Method and apparatus for processing workpieces |
| US8952497B2 (en) * | 2012-09-14 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scribe lines in wafers |
| US9040389B2 (en) | 2012-10-09 | 2015-05-26 | Infineon Technologies Ag | Singulation processes |
| US11335721B2 (en) * | 2013-11-06 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated image sensor device with shielding layer |
| US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
| US20180015569A1 (en) * | 2016-07-18 | 2018-01-18 | Nanya Technology Corporation | Chip and method of manufacturing chips |
| US10720360B2 (en) | 2016-07-29 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor die singulation and structures formed thereby |
| US10916516B2 (en) * | 2017-06-07 | 2021-02-09 | Xilinx, Inc. | High bandwidth memory (HBM) bandwidth aggregation switch |
| CN108630599A (zh) * | 2017-03-22 | 2018-10-09 | 东莞新科技术研究开发有限公司 | 芯片的形成方法 |
| KR102525161B1 (ko) | 2018-07-16 | 2023-04-24 | 삼성전자주식회사 | 반도체 장치 및 상기 반도체 장치를 탑재한 반도체 패키지 |
| WO2021138794A1 (en) | 2020-01-07 | 2021-07-15 | Yangtze Memory Technologies Co., Ltd. | Methods for multi-wafer stacking and dicing |
| DE102020115687B4 (de) | 2020-06-15 | 2024-05-16 | Infineon Technologies Ag | Herstellung von halbleitervorrichtungen durch dünnen und zerteilen |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2420443B (en) | 2004-11-01 | 2009-09-16 | Xsil Technology Ltd | Increasing die strength by etching during or after dicing |
| TWI300593B (en) * | 2006-02-07 | 2008-09-01 | Touch Micro System Tech | Method of segmenting wafer |
| US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
| US7888236B2 (en) * | 2007-05-14 | 2011-02-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication methods thereof |
| US7838424B2 (en) * | 2007-07-03 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching |
| CN101383299B (zh) * | 2007-09-05 | 2011-01-19 | 精材科技股份有限公司 | 电子元件的晶圆级封装及其制造方法 |
| US8097929B2 (en) * | 2008-05-23 | 2012-01-17 | Chia-Sheng Lin | Electronics device package and fabrication method thereof |
-
2010
- 2010-11-24 US US12/954,151 patent/US8071429B1/en active Active
-
2011
- 2011-10-25 TW TW100138728A patent/TWI449096B/zh active
- 2011-11-23 CN CN201110392612.6A patent/CN102544035B/zh active Active
-
2012
- 2012-12-10 HK HK12112732.4A patent/HK1172152A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US8071429B1 (en) | 2011-12-06 |
| CN102544035A (zh) | 2012-07-04 |
| CN102544035B (zh) | 2015-03-04 |
| TW201236072A (en) | 2012-09-01 |
| TWI449096B (zh) | 2014-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| HK1172152A1 (zh) | 使用切割道蝕刻的晶圓切片 | |
| HK1209524A1 (zh) | 半導體器件 | |
| EP2652776A4 (en) | Wafer inspection | |
| EP2530721A4 (en) | Semiconductor device | |
| EP2696368A4 (en) | SEMICONDUCTOR DEVICE WITH SILICON CARBIDE | |
| EP2717300A4 (en) | SEMICONDUCTOR DEVICE | |
| EP2587528A4 (en) | SEMICONDUCTOR COMPONENT | |
| EP2546882A4 (en) | SEMICONDUCTOR DEVICE | |
| SG10201500353WA (en) | Semiconductor device | |
| EP2562818A4 (en) | SEMICONDUCTOR DEVICE | |
| EP2560206A4 (en) | SEMICONDUCTOR COMPONENT | |
| EP2541609A4 (en) | SEMICONDUCTOR DEVICE | |
| EP2560207A4 (en) | SEMICONDUCTOR COMPONENT | |
| EP2549534A4 (en) | SEMICONDUCTOR DEVICE | |
| EP2565922A4 (en) | Semiconductor device | |
| EP2544965A4 (en) | SHIPPING PACKAGING THIN SLICES | |
| EP2575134B8 (en) | Semiconductor device | |
| EP2571050A4 (en) | Semiconductor device | |
| EP2793250A4 (en) | PROCESS FOR MANUFACTURING SILICON INSULATING WAFER | |
| EP2672516A4 (en) | SEMICONDUCTOR DEVICE | |
| HK1219173A1 (zh) | 半導體器件 | |
| EP2642517A4 (en) | SEMICONDUCTOR COMPONENT | |
| EP2551900A4 (en) | SEMICONDUCTOR COMPONENT | |
| EP2721381A4 (en) | SPECTROMETER AT PLATE LEVEL | |
| EP2525397B8 (de) | Leistungshalbleiter |