HK1172152A1 - 使用切割道蝕刻的晶圓切片 - Google Patents

使用切割道蝕刻的晶圓切片

Info

Publication number
HK1172152A1
HK1172152A1 HK12112732.4A HK12112732A HK1172152A1 HK 1172152 A1 HK1172152 A1 HK 1172152A1 HK 12112732 A HK12112732 A HK 12112732A HK 1172152 A1 HK1172152 A1 HK 1172152A1
Authority
HK
Hong Kong
Prior art keywords
scribe line
wafer dicing
line etch
etch
dicing
Prior art date
Application number
HK12112732.4A
Other languages
English (en)
Inventor
錢胤
戴幸志
．毛
．韋內齊亞
．鄭
顧克強
．羅茲
Original Assignee
美商豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商豪威科技股份有限公司 filed Critical 美商豪威科技股份有限公司
Publication of HK1172152A1 publication Critical patent/HK1172152A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK12112732.4A 2010-11-24 2012-12-10 使用切割道蝕刻的晶圓切片 HK1172152A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/954,151 US8071429B1 (en) 2010-11-24 2010-11-24 Wafer dicing using scribe line etch

Publications (1)

Publication Number Publication Date
HK1172152A1 true HK1172152A1 (zh) 2013-04-12

Family

ID=45034383

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12112732.4A HK1172152A1 (zh) 2010-11-24 2012-12-10 使用切割道蝕刻的晶圓切片

Country Status (4)

Country Link
US (1) US8071429B1 (zh)
CN (1) CN102544035B (zh)
HK (1) HK1172152A1 (zh)
TW (1) TWI449096B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782862B (zh) * 2010-02-26 2015-08-26 精材科技股份有限公司 芯片封装体及其制造方法
US8809120B2 (en) * 2011-02-17 2014-08-19 Infineon Technologies Ag Method of dicing a wafer
EP2530709B1 (en) * 2011-06-03 2015-09-09 Nxp B.V. Method of producing a semiconductor wafer
WO2013150427A1 (en) * 2012-04-05 2013-10-10 Koninklijke Philips N.V. Led thin-film device partial singulation prior to substrate thinning or removal
US9266192B2 (en) 2012-05-29 2016-02-23 Electro Scientific Industries, Inc. Method and apparatus for processing workpieces
US8952497B2 (en) * 2012-09-14 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe lines in wafers
US9040389B2 (en) 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
US11335721B2 (en) * 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
US10014333B2 (en) * 2015-08-26 2018-07-03 Semiconductor Components Industries, Llc Back-side illuminated pixels with interconnect layers
US20180015569A1 (en) * 2016-07-18 2018-01-18 Nanya Technology Corporation Chip and method of manufacturing chips
US10720360B2 (en) 2016-07-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die singulation and structures formed thereby
US10916516B2 (en) * 2017-06-07 2021-02-09 Xilinx, Inc. High bandwidth memory (HBM) bandwidth aggregation switch
CN108630599A (zh) * 2017-03-22 2018-10-09 东莞新科技术研究开发有限公司 芯片的形成方法
KR102525161B1 (ko) 2018-07-16 2023-04-24 삼성전자주식회사 반도체 장치 및 상기 반도체 장치를 탑재한 반도체 패키지
WO2021138794A1 (en) * 2020-01-07 2021-07-15 Yangtze Memory Technologies Co., Ltd. Methods for multi-wafer stacking and dicing
DE102020115687B4 (de) 2020-06-15 2024-05-16 Infineon Technologies Ag Herstellung von halbleitervorrichtungen durch dünnen und zerteilen
US12034027B2 (en) 2021-08-20 2024-07-09 Omnivision Technologies, Inc. Semiconductor device contact pad and method of contact pad fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2420443B (en) 2004-11-01 2009-09-16 Xsil Technology Ltd Increasing die strength by etching during or after dicing
TWI300593B (en) * 2006-02-07 2008-09-01 Touch Micro System Tech Method of segmenting wafer
US8049256B2 (en) * 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
US7888236B2 (en) * 2007-05-14 2011-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication methods thereof
US7838424B2 (en) * 2007-07-03 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced reliability of wafer-level chip-scale packaging (WLCSP) die separation using dry etching
CN101383299B (zh) * 2007-09-05 2011-01-19 精材科技股份有限公司 电子元件的晶圆级封装及其制造方法
US8097929B2 (en) * 2008-05-23 2012-01-17 Chia-Sheng Lin Electronics device package and fabrication method thereof

Also Published As

Publication number Publication date
TW201236072A (en) 2012-09-01
US8071429B1 (en) 2011-12-06
CN102544035A (zh) 2012-07-04
CN102544035B (zh) 2015-03-04
TWI449096B (zh) 2014-08-11

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