TWI560168B - - Google Patents
Info
- Publication number
- TWI560168B TWI560168B TW104127070A TW104127070A TWI560168B TW I560168 B TWI560168 B TW I560168B TW 104127070 A TW104127070 A TW 104127070A TW 104127070 A TW104127070 A TW 104127070A TW I560168 B TWI560168 B TW I560168B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014172233A JP6041219B2 (ja) | 2014-08-27 | 2014-08-27 | スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201607914A TW201607914A (zh) | 2016-03-01 |
TWI560168B true TWI560168B (es) | 2016-12-01 |
Family
ID=55418759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104127070A TW201607914A (zh) | 2014-08-27 | 2015-08-20 | 濺鍍靶材 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6041219B2 (es) |
KR (2) | KR20160025459A (es) |
CN (1) | CN105385995B (es) |
TW (1) | TW201607914A (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020170949A1 (ja) * | 2019-02-18 | 2020-08-27 | 出光興産株式会社 | 酸化物焼結体、スパッタリングターゲット及びスパッタリングターゲットの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201300344A (zh) * | 2011-03-02 | 2013-01-01 | Kobelco Res Inst Inc | 氧化物燒結體及濺鍍靶 |
TW201307595A (zh) * | 2011-04-29 | 2013-02-16 | Mitsubishi Materials Corp | 濺鍍靶及其製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4552950B2 (ja) | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
JP2009010052A (ja) * | 2007-06-26 | 2009-01-15 | Kobe Steel Ltd | 表示装置の製造方法 |
JP5309722B2 (ja) * | 2007-11-14 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
JP2009123957A (ja) | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
JP2009212033A (ja) | 2008-03-06 | 2009-09-17 | Sumitomo Chemical Co Ltd | 透明導電性結晶膜の製造方法 |
JP5024226B2 (ja) * | 2008-08-06 | 2012-09-12 | 日立金属株式会社 | 酸化物焼結体およびその製造方法、スパッタリングターゲット、半導体薄膜 |
JP2012180248A (ja) * | 2011-03-02 | 2012-09-20 | Kobelco Kaken:Kk | 酸化物焼結体およびスパッタリングターゲット |
JP6212869B2 (ja) * | 2012-02-06 | 2017-10-18 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット |
JP2014062316A (ja) | 2012-09-03 | 2014-04-10 | Idemitsu Kosan Co Ltd | スパッタリングターゲット |
-
2014
- 2014-08-27 JP JP2014172233A patent/JP6041219B2/ja active Active
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2015
- 2015-08-19 KR KR1020150116648A patent/KR20160025459A/ko not_active Application Discontinuation
- 2015-08-20 TW TW104127070A patent/TW201607914A/zh unknown
- 2015-08-27 CN CN201510536644.7A patent/CN105385995B/zh active Active
-
2017
- 2017-03-28 KR KR1020170039254A patent/KR101884563B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201300344A (zh) * | 2011-03-02 | 2013-01-01 | Kobelco Res Inst Inc | 氧化物燒結體及濺鍍靶 |
TW201307595A (zh) * | 2011-04-29 | 2013-02-16 | Mitsubishi Materials Corp | 濺鍍靶及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6041219B2 (ja) | 2016-12-07 |
CN105385995A (zh) | 2016-03-09 |
KR20170039627A (ko) | 2017-04-11 |
KR101884563B1 (ko) | 2018-08-01 |
KR20160025459A (ko) | 2016-03-08 |
JP2016044357A (ja) | 2016-04-04 |
TW201607914A (zh) | 2016-03-01 |
CN105385995B (zh) | 2019-11-19 |