TWI557163B - 用於微流道晶片裝置的模具 - Google Patents

用於微流道晶片裝置的模具 Download PDF

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TWI557163B
TWI557163B TW104142028A TW104142028A TWI557163B TW I557163 B TWI557163 B TW I557163B TW 104142028 A TW104142028 A TW 104142028A TW 104142028 A TW104142028 A TW 104142028A TW I557163 B TWI557163 B TW I557163B
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mold
base
module
flow channel
micro flow
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洪健中
李佳翃
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國立清華大學
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Description

用於微流道晶片裝置的模具
本發明是有關於一種用於微流道晶片裝置之模具，特別是指一種用於製備以高分子為構成材料之微流道晶片裝置的模具。
近年來，陸續有利用形狀記憶材料做為微流道晶片或控制微流道晶片之驅動及開關閥的相關研究。例如發明人於美國專利公開號US2011/0247707A1中揭示一種利用形狀記憶高分子材料(Shape memory polymer)構成之基座，做為驅動微流體動力源的微流道晶片。其中，該基座由形狀記憶高分子材料構成，具有一變化部，該變化部在記憶型態及暫時型態會產生體積的變化，而讓與該變化部連通的微流道的壓力產生變化，而驅動流體進入該微流道。
然而，於製備前述具有記憶型態的該基座時，如US2011/0247707A1所揭示，是利用單一模具製備單一個基座，並不適用大量的製備，此外，當用於製備該形狀記憶高分子的單體於交聯反應完成，得到該由形狀記憶高分子製得的基座，而欲將該基座自該模具取出時，也因為取出不易而造成該基座毀損，導致該基座成品的良率不高。
因此，本發明之目的，即在提供一種用於微流道晶片裝置的模具，該微流道晶片裝置包括一基座及一與該基座連接的微流道晶片，該模具用於製備該基座。該基座是由形狀記憶高分子所構成，具有一呈現記憶型態的變化部，且該記憶型態的變化部是自該基材表面向下形成的凹穴。
於是，本發明該模具，包含：一個底模、一個中模，及一個上蓋。
該底模包括一個底座、一個自該底座表面向上延伸的平台，及多個自該平台向上凸伸且彼此間隔設置的模塊，且該每一個模塊具有至少一個自該模塊的頂面凸伸的凸塊。
該中模設置於該底模上，且與該底模彼此為可拆移的緊密配合，包括一個具有預定的高度且底部與該底模的平台邊緣密合的中模塊，及多個貫通該中模塊且與該等模塊的位置及外輪廓相配合的模孔，且該每一個模孔與相對應的模塊共同定義出一用於容置液體的空間。
該上蓋蓋設該中模塊遠離該底模的表面。
本發明之功效在於：利用二段阻隔防漏結構及多模孔的模具設計，因此反應單體於模具內反應時可不洩漏，並可大量製備，且於反應製得成品後，可快速拆卸離型不破壞成品，而提升整體的製程良率。
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
參閱圖1、圖2，本發明的模具的一實施例是用於製備如圖1所示的微流道晶片裝置的基座21，該微流道晶片裝置包括該基座21及一與該基座21連接的微流道晶片22。
該基座21是由形狀記憶高分子所構成，具有一呈現記憶型態變化部211，且該記憶型態變化部211是自該基座21表面向下形成的凹穴。
要說明的是，前述該形狀記憶高分子是利用聚合後可得到具備形狀記憶特性的高分子材料的單體組成聚合後而得。該單體組成包括聚合單體、交聯劑，如，Ethylene glycol dimethacrylate，EGDMA)、Tetraethylene glycol dimethacrylate，TEGDMA)，及起始劑(如2,2-azobisisobutyronitrile，AIBN、1,1-azobiscyclohexanecarbonitrile，ABCN)。
其中，該形狀記憶高分子可為化學交聯型玻璃相之網狀高分子(covalently cross-linked glassy thermoset networks as SMP)、化學交聯型半結晶性之網狀高分子(covalently cross-linked semi-crystalline networks as SMP)、物理交聯型玻璃相之共聚高分子(physically cross-linked glassy copolymers as SMP)，及物理交聯型半結晶性之共聚高分子(physically cross-linked semi-crystalline block copolymers as SMP) ，由於該單體組成中聚合單體的種類選擇及相關配比可依據需求而自行調整且為本技術領域者知悉，故於此不再多加贅述。以本實施例之該基座21為由熱感應式形狀記憶高分子材料構成為例，該單體組成是選自可聚合得到壓克力系形狀記憶高分子的甲基壓克力(methyl methacrylate，MMA)及丁基壓克力(butyl methyacrylate，BMA)。較佳地，為了提升該基座21熱感變化的速度，該單體組成還可包括一添加量介於1~5wt%的導熱添加劑，該導熱添加劑選自奈米碳材或氮化硼等高導熱性材料。
該微流道晶片22具有一個微流道221，該微流道221的兩端分別與外界連通。當要將該基座21與該微流道晶片22組裝時，須先將該基座21表面熱壓，讓該基座21的變化部從呈凹穴的記憶型態變化部211，變成平坦的暫時型態變化部212，再將該微流道晶片22與該基座21黏接，並讓該微流道221的其中一端開口與該基座21的暫時型態變化部212相連通而得到該微流道晶片裝置。
使用時，則可利用外界的刺激(例如熱、電、光等變化)，令該暫時型態變化部212變換成記憶型態變化部211，藉由該變化部的型態變化所產生的體積變化，使該微流道221的壓力產生變化，而驅動位於該微流道221另一端開口的流體100進入該微流道221。本實施例該基座21是以熱感應形狀記憶高分子材料構成，因此，是利用加熱方式讓該基座21的變化部自該暫時型態變化部212恢復成該記憶型態變化部211。
前述該基座21的目的是讓組裝後的暫時型態變化部212所在位置與該微流道221的其中一端開口連通即可，因此該基座21的形狀或是該變化部的形狀並不須加以限制，也不須限制該基座21的表面積須與該微流道晶片22相同，因此，該基座21可如圖2僅與該微流道晶片22的部份表面連接，或是與該微流道晶片22的表面積相當(圖未示)，而與該微流道晶片22的整體表面連接。
前述該具記憶型態變化部211的基座21，是由本發明該模具的實施例所製得。
參閱圖3、4，該模具包含：一底模31、一中模32，及一上蓋33。
該底模31包括一個底座311、一個自該底座311表面向上延伸的平台312，及多個自該平台312向上凸伸且彼此間隔設置的模塊313，且該每一個模塊313具有一個自該模塊313的頂面凸伸的凸塊314。
要說明的是，為了可以單一製程同時製得多個基座21，因此，自該平台312凸伸的模塊313為多個，彼此間隔且為成陣列方式排列；此外，該等模塊313及凸塊314的形狀可各自為圓形、方形等形狀，其最終主要是讓該凸塊314所在位置形成該具記憶型態的變化部211，因此並不須加以限制形狀。
本發明該模具的實施例為以製備與前述圖2所示之該微流道晶片22配合的該基座21為例做說明，因此，該每一個模塊313為自該平台312向上凸伸且概成圓柱型，而該凸塊314則是自該模塊313的頂面的一側向上凸伸成長柱體。其中，該每一個模塊313的表面積即為對應該基座21的表面積，而該凸塊314則是對應該基座21的記憶型態變化部211。
該中模32設置於該底模31上且與該底模31彼此為可拆移的緊密配合，包括一個具有預定的高度且底部與該底模31的平台312邊緣密合的中模塊321、一個形成於該中模塊321遠離該底模31的表面的周緣的軌道322，及多個貫通該中模塊321且與該等模塊313的位置及外輪廓相配合的模孔323，且該每一個模孔323與相對應的中模塊321共同定義出一用於容置液體的空間324。
該上蓋33與該中模32的軌道322相配合，經由該軌道322以滑動方式蓋設該等模孔323。
較佳地，為了讓聚合後製得的成品可容易脫模，該底模31、中模32，及上蓋33的構成材料為聚四氟乙烯(鐵氟龍)。
當利用本發明該模具製備該微流道晶片裝置的基座21時，則僅須將該底模31與該中模32組裝後，將可經聚合而得到形狀記憶高分子的單體組成置入由該等模孔323與中模塊321所共同定義出的空間324，接著蓋上該上蓋33後，即可進行聚合反應。待反應完成後將該上蓋33及底模31拆除，再將經聚合反應製得的成品自該中模32脫模移出，即可得到多個圖2所示，用於該微流道晶片裝置的基座21。
本發明該模具利用凸出於平台312的凸塊314與該中模32的模孔323配合做為第一道防漏液結構，再利用中模塊321與該平台312的搭配作為第二道防漏液結構，因此，可有效防止單體組成自該底模31及中模32的縫隙中洩漏的缺點；此外由於該上蓋33是利用滑動方式蓋合該中模32，因此，可避免以壓蓋式上蓋於蓋合時會產生空氣壓力擠壓液體，而使得受壓液體向該底模31及中模32之間的隙縫處洩漏的缺點；再者，因為還可藉由該軌道322將該上蓋33固定密合，所以可減少因聚合反應過程中產生的氣體壓力造成上蓋33移動，密封性不夠，所導致的單體組成或溶劑洩漏的問題。
此外，要說明的是，當該微流道晶片22須要較大的驅動力或是須要動力驅動的微流道221不只一條時(圖未示)，除了可在對應每一條須要驅動的微流道221設置一個該基座21之外，也可利用該底模31的設計，將該底模31的凸塊314的體積增加，或是將凸塊314設計成多個，如此即可在製得的該基座21形成體積較大的變化部，或是形成多個變化部，而應用在須要有較大驅動力，或是有多條微流道221的微流道晶片22，而達到所需的要求。
綜上所述，本發明該模具利用可拆式、二道防漏結構及滑動式上蓋的模具設計，因此可有效防止液體自該中模及該底模的縫隙洩漏的問題，且於反應製得成品後，可快速拆卸離型不破壞成品，而提升整體的製程良率，故確實能達成本發明之目的。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
21‧‧‧基座
211‧‧‧記憶型態變化部
212‧‧‧暫時型態變化部
22‧‧‧微流道晶片
221‧‧‧微流道
31‧‧‧底模
311‧‧‧底座
312‧‧‧平台
313‧‧‧模塊
314‧‧‧凸塊
32‧‧‧中模
321‧‧‧中模塊
322‧‧‧軌道
323‧‧‧模孔
324‧‧‧空間
33‧‧‧上蓋
100‧‧‧流體
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是習知含有變化部之基座的一示意圖 圖2是習知微流道晶片裝置的一示意圖； 圖3是本發明該模具的實施例的一立體分解示意圖； 圖4是該實施例的一組合示意圖。
31‧‧‧底模
311‧‧‧底座
312‧‧‧平台
32‧‧‧中模
321‧‧‧中模塊
322‧‧‧軌道
313‧‧‧模塊
314‧‧‧凸塊
323‧‧‧模孔
33‧‧‧上蓋

Claims (6)

  1. 一種用於微流道晶片裝置的模具，該微流道晶片裝置包括一基座及一與該基座連接的微流道晶片，該模具用於製備該基座，該基座是由形狀記憶高分子所構成，具有一呈現記憶型態的變化部，且該記憶型態的變化部是自該基材表面向下形成的凹穴，該模具包含： 一個底模，該底模包括一個底座、一個自該底座表面向上延伸的平台，及多個自該平台向上凸伸且彼此間隔設置的模塊，且該每一個模塊具有至少一個自該模塊的頂面凸伸的凸塊； 一個中模，設置於該底模上且與該底模彼此為可拆移的緊密配合，包括一個具有預定的高度且底部與該底模的平台邊緣密合的中模塊，及多個貫通該中模塊且與該等模塊的位置及外輪廓相配合的模孔，且該每一個模孔與相對應的模塊共同定義出一用於容置液體的空間；及 一個上蓋，蓋設該中模塊遠離該底模的表面。
  2. 如請求項1所述用於微流道晶片裝置的模具，其中，該中模還包括一個形成於該中模塊遠離該底模的表面的軌道，該上蓋經由該軌道以滑動方式蓋設該等模孔。
  3. 如請求項1所述用於微流道晶片裝置的模具，其中，該底模、中模，及上蓋的構成材料為聚四氟乙烯。
  4. 如請求項1所述用於微流道晶片裝置的模具，其中，該每一個模塊具有多個自該模塊的頂面凸伸的凸塊。
  5. 如請求項1所述用於微流道晶片裝置的模具，其中，該等模塊成陣列排列方式凸伸於該平台。
  6. 如請求項1所述用於微流道晶片裝置的模具，其中，該平台係自該底座表面鄰近邊緣的位置向上延伸。
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