TWI555874B - 批量處理技術 - Google Patents
批量處理技術 Download PDFInfo
- Publication number
- TWI555874B TWI555874B TW101138221A TW101138221A TWI555874B TW I555874 B TWI555874 B TW I555874B TW 101138221 A TW101138221 A TW 101138221A TW 101138221 A TW101138221 A TW 101138221A TW I555874 B TWI555874 B TW I555874B
- Authority
- TW
- Taiwan
- Prior art keywords
- module
- batch
- reaction chamber
- substrate
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 110
- 238000006243 chemical reaction Methods 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 52
- 239000002243 precursor Substances 0.000 claims description 48
- 238000000231 atomic layer deposition Methods 0.000 claims description 47
- 238000000151 deposition Methods 0.000 claims description 36
- 238000012805 post-processing Methods 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 16
- 238000007781 pre-processing Methods 0.000 claims description 15
- 238000011010 flushing procedure Methods 0.000 claims description 12
- 238000011068 loading method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 238000009738 saturating Methods 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims 2
- 238000009826 distribution Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 29
- 239000011261 inert gas Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000002203 pretreatment Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/FI2011/051017 WO2013076347A1 (en) | 2011-11-22 | 2011-11-22 | An atomic layer deposition reactor for processing a batch of substrates and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201323650A TW201323650A (zh) | 2013-06-16 |
| TWI555874B true TWI555874B (zh) | 2016-11-01 |
Family
ID=48469186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101138221A TWI555874B (zh) | 2011-11-22 | 2012-10-17 | 批量處理技術 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20140335267A1 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2783023B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5927305B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR20140096365A (cg-RX-API-DMAC7.html) |
| CN (1) | CN103946418A (cg-RX-API-DMAC7.html) |
| IN (1) | IN2014DN04032A (cg-RX-API-DMAC7.html) |
| RU (1) | RU2586956C2 (cg-RX-API-DMAC7.html) |
| SG (1) | SG11201402372TA (cg-RX-API-DMAC7.html) |
| TW (1) | TWI555874B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2013076347A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2627789B2 (ja) | 1988-09-07 | 1997-07-09 | 本田技研工業株式会社 | 複数ベアリングの同時圧入装置 |
| SG11201509725WA (en) | 2013-06-27 | 2015-12-30 | Picosun Oy | Anti-counterfeit signature |
| JP6346022B2 (ja) * | 2013-07-31 | 2018-06-20 | 京セラ株式会社 | 薄膜形成方法および太陽電池素子の製造方法 |
| JP7037551B2 (ja) * | 2016-09-16 | 2022-03-16 | ピコサン オーワイ | 原子層堆積のための装置および方法 |
| RU172394U1 (ru) * | 2017-01-13 | 2017-07-06 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | Устройство для атомно-слоевого осаждения |
| RU2752059C1 (ru) * | 2020-07-14 | 2021-07-22 | Пикосан Ой | Устройство для атомно-слоевого осаждения (ald) |
| CN111850518B (zh) * | 2020-07-21 | 2024-07-19 | 理想万里晖半导体设备(上海)股份有限公司 | 托盘预热腔及对应的pecvd设备 |
| KR102581325B1 (ko) * | 2020-12-22 | 2023-09-22 | 한국전자기술연구원 | 배치 타입 원자층 증착 장치 |
| FI131711B1 (en) * | 2022-03-30 | 2025-10-08 | Beneq Oy | Reaction chamber, atomic layer growth equipment and method |
| CN115404464A (zh) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | 沉积薄膜的方法和设备、薄膜以及太阳能电池 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201015738A (en) * | 2008-10-03 | 2010-04-16 | Ind Tech Res Inst | Atomic layer deposition apparatus |
| US20110041764A1 (en) * | 2006-06-26 | 2011-02-24 | Aaron Webb | Batch processing platform for ald and cvd |
| CN102046856A (zh) * | 2008-05-27 | 2011-05-04 | 皮考逊公司 | 用于沉积反应器的方法和装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
| KR100347379B1 (ko) * | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
| US6475276B1 (en) * | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
| JP4089113B2 (ja) * | 1999-12-28 | 2008-05-28 | 株式会社Ｉｈｉ | 薄膜作成装置 |
| AU2002343583A1 (en) * | 2001-10-29 | 2003-05-12 | Genus, Inc. | Chemical vapor deposition system |
| US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
| KR20050004379A (ko) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | 원자층 증착용 가스 공급 장치 |
| RU2261289C1 (ru) * | 2004-06-08 | 2005-09-27 | Государственное научное учреждение "Научно-исследовательский институт ядерной физики при Томском политехническом университете министерства образования Российской Федерации" | Устройство для нанесения многослойных токопроводящих покрытий на изделия из диэлектрических материалов и источник ионов для него |
| JP4927623B2 (ja) * | 2007-03-30 | 2012-05-09 | 東京エレクトロン株式会社 | ロードロック装置の昇圧方法 |
| US8367560B2 (en) * | 2007-06-15 | 2013-02-05 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
| NL1036164A1 (nl) * | 2007-11-15 | 2009-05-18 | Asml Netherlands Bv | Substrate processing apparatus and device manufacturing method. |
| US20090291209A1 (en) * | 2008-05-20 | 2009-11-26 | Asm International N.V. | Apparatus and method for high-throughput atomic layer deposition |
| KR101545372B1 (ko) * | 2008-05-20 | 2015-08-18 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 무한 길이 웨브의 연속 소결 방법 |
| US20100098851A1 (en) * | 2008-10-20 | 2010-04-22 | Varian Semiconductor Equipment Associates, Inc. | Techniques for atomic layer deposition |
| US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
-
2011
- 2011-11-22 WO PCT/FI2011/051017 patent/WO2013076347A1/en not_active Ceased
- 2011-11-22 CN CN201180075016.3A patent/CN103946418A/zh active Pending
- 2011-11-22 KR KR1020147016100A patent/KR20140096365A/ko not_active Ceased
- 2011-11-22 EP EP11876170.9A patent/EP2783023B1/en active Active
- 2011-11-22 KR KR1020167023912A patent/KR101696354B1/ko active Active
- 2011-11-22 SG SG11201402372TA patent/SG11201402372TA/en unknown
- 2011-11-22 IN IN4032DEN2014 patent/IN2014DN04032A/en unknown
- 2011-11-22 JP JP2014541718A patent/JP5927305B2/ja active Active
- 2011-11-22 US US14/359,775 patent/US20140335267A1/en not_active Abandoned
- 2011-11-22 RU RU2014124039/02A patent/RU2586956C2/ru active
-
2012
- 2012-10-17 TW TW101138221A patent/TWI555874B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110041764A1 (en) * | 2006-06-26 | 2011-02-24 | Aaron Webb | Batch processing platform for ald and cvd |
| CN102046856A (zh) * | 2008-05-27 | 2011-05-04 | 皮考逊公司 | 用于沉积反应器的方法和装置 |
| TW201015738A (en) * | 2008-10-03 | 2010-04-16 | Ind Tech Res Inst | Atomic layer deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5927305B2 (ja) | 2016-06-01 |
| EP2783023A1 (en) | 2014-10-01 |
| KR101696354B1 (ko) | 2017-01-23 |
| RU2014124039A (ru) | 2015-12-27 |
| KR20140096365A (ko) | 2014-08-05 |
| JP2015505899A (ja) | 2015-02-26 |
| US20140335267A1 (en) | 2014-11-13 |
| WO2013076347A1 (en) | 2013-05-30 |
| CN103946418A (zh) | 2014-07-23 |
| IN2014DN04032A (cg-RX-API-DMAC7.html) | 2015-05-15 |
| TW201323650A (zh) | 2013-06-16 |
| RU2586956C2 (ru) | 2016-06-10 |
| EP2783023B1 (en) | 2020-11-04 |
| EP2783023A4 (en) | 2015-06-24 |
| KR20160105548A (ko) | 2016-09-06 |
| SG11201402372TA (en) | 2014-06-27 |
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