CN103946418A - 用于处理成批的衬底的原子层沉积反应器及其方法 - Google Patents

用于处理成批的衬底的原子层沉积反应器及其方法 Download PDF

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Publication number
CN103946418A
CN103946418A CN201180075016.3A CN201180075016A CN103946418A CN 103946418 A CN103946418 A CN 103946418A CN 201180075016 A CN201180075016 A CN 201180075016A CN 103946418 A CN103946418 A CN 103946418A
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CN
China
Prior art keywords
batch
substrate
module
reaction chamber
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201180075016.3A
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English (en)
Chinese (zh)
Inventor
S·林德弗斯
P·J·苏瓦尼南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Picosun Oy
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picosun Oy filed Critical Picosun Oy
Publication of CN103946418A publication Critical patent/CN103946418A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
CN201180075016.3A 2011-11-22 2011-11-22 用于处理成批的衬底的原子层沉积反应器及其方法 Pending CN103946418A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2011/051017 WO2013076347A1 (en) 2011-11-22 2011-11-22 An atomic layer deposition reactor for processing a batch of substrates and method thereof

Publications (1)

Publication Number Publication Date
CN103946418A true CN103946418A (zh) 2014-07-23

Family

ID=48469186

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180075016.3A Pending CN103946418A (zh) 2011-11-22 2011-11-22 用于处理成批的衬底的原子层沉积反应器及其方法

Country Status (10)

Country Link
US (1) US20140335267A1 (cg-RX-API-DMAC7.html)
EP (1) EP2783023B1 (cg-RX-API-DMAC7.html)
JP (1) JP5927305B2 (cg-RX-API-DMAC7.html)
KR (2) KR20140096365A (cg-RX-API-DMAC7.html)
CN (1) CN103946418A (cg-RX-API-DMAC7.html)
IN (1) IN2014DN04032A (cg-RX-API-DMAC7.html)
RU (1) RU2586956C2 (cg-RX-API-DMAC7.html)
SG (1) SG11201402372TA (cg-RX-API-DMAC7.html)
TW (1) TWI555874B (cg-RX-API-DMAC7.html)
WO (1) WO2013076347A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109689930A (zh) * 2016-09-16 2019-04-26 皮考逊公司 用于原子层沉积的设备和方法
CN115404464A (zh) * 2022-09-23 2022-11-29 江苏微导纳米科技股份有限公司 沉积薄膜的方法和设备、薄膜以及太阳能电池

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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JP2627789B2 (ja) 1988-09-07 1997-07-09 本田技研工業株式会社 複数ベアリングの同時圧入装置
SG11201509725WA (en) 2013-06-27 2015-12-30 Picosun Oy Anti-counterfeit signature
JP6346022B2 (ja) * 2013-07-31 2018-06-20 京セラ株式会社 薄膜形成方法および太陽電池素子の製造方法
RU172394U1 (ru) * 2017-01-13 2017-07-06 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Устройство для атомно-слоевого осаждения
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
CN111850518B (zh) * 2020-07-21 2024-07-19 理想万里晖半导体设备(上海)股份有限公司 托盘预热腔及对应的pecvd设备
KR102581325B1 (ko) * 2020-12-22 2023-09-22 한국전자기술연구원 배치 타입 원자층 증착 장치
FI131711B1 (en) * 2022-03-30 2025-10-08 Beneq Oy Reaction chamber, atomic layer growth equipment and method

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US20040067641A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20080318442A1 (en) * 2007-06-15 2008-12-25 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
CN101438387A (zh) * 2006-06-26 2009-05-20 应用材料股份有限公司 用于ald和cvd的批式处理平台
TW201015738A (en) * 2008-10-03 2010-04-16 Ind Tech Res Inst Atomic layer deposition apparatus
US20100098851A1 (en) * 2008-10-20 2010-04-22 Varian Semiconductor Equipment Associates, Inc. Techniques for atomic layer deposition
US20100190343A1 (en) * 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber
CN102046856A (zh) * 2008-05-27 2011-05-04 皮考逊公司 用于沉积反应器的方法和装置

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US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
JP4089113B2 (ja) * 1999-12-28 2008-05-28 株式会社Ｉｈｉ 薄膜作成装置
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NL1036164A1 (nl) * 2007-11-15 2009-05-18 Asml Netherlands Bv Substrate processing apparatus and device manufacturing method.
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
KR101545372B1 (ko) * 2008-05-20 2015-08-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 무한 길이 웨브의 연속 소결 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040067641A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
CN101438387A (zh) * 2006-06-26 2009-05-20 应用材料股份有限公司 用于ald和cvd的批式处理平台
US20080318442A1 (en) * 2007-06-15 2008-12-25 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
CN102046856A (zh) * 2008-05-27 2011-05-04 皮考逊公司 用于沉积反应器的方法和装置
TW201015738A (en) * 2008-10-03 2010-04-16 Ind Tech Res Inst Atomic layer deposition apparatus
US20100098851A1 (en) * 2008-10-20 2010-04-22 Varian Semiconductor Equipment Associates, Inc. Techniques for atomic layer deposition
TW201026889A (en) * 2008-10-20 2010-07-16 Varian Semiconductor Equipment Techniques for atomic layer deposition
US20100190343A1 (en) * 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109689930A (zh) * 2016-09-16 2019-04-26 皮考逊公司 用于原子层沉积的设备和方法
CN109689930B (zh) * 2016-09-16 2022-07-29 皮考逊公司 用于原子层沉积的设备和方法
CN115404464A (zh) * 2022-09-23 2022-11-29 江苏微导纳米科技股份有限公司 沉积薄膜的方法和设备、薄膜以及太阳能电池

Also Published As

Publication number Publication date
JP5927305B2 (ja) 2016-06-01
EP2783023A1 (en) 2014-10-01
KR101696354B1 (ko) 2017-01-23
RU2014124039A (ru) 2015-12-27
KR20140096365A (ko) 2014-08-05
JP2015505899A (ja) 2015-02-26
US20140335267A1 (en) 2014-11-13
WO2013076347A1 (en) 2013-05-30
TWI555874B (zh) 2016-11-01
IN2014DN04032A (cg-RX-API-DMAC7.html) 2015-05-15
TW201323650A (zh) 2013-06-16
RU2586956C2 (ru) 2016-06-10
EP2783023B1 (en) 2020-11-04
EP2783023A4 (en) 2015-06-24
KR20160105548A (ko) 2016-09-06
SG11201402372TA (en) 2014-06-27

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Application publication date: 20140723

RJ01 Rejection of invention patent application after publication