TWI555076B - 基板處理設備及方法 - Google Patents
基板處理設備及方法 Download PDFInfo
- Publication number
- TWI555076B TWI555076B TW103140558A TW103140558A TWI555076B TW I555076 B TWI555076 B TW I555076B TW 103140558 A TW103140558 A TW 103140558A TW 103140558 A TW103140558 A TW 103140558A TW I555076 B TWI555076 B TW I555076B
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- substrate processing
- processing apparatus
- wafer
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 title claims description 42
- 238000012545 processing Methods 0.000 claims description 87
- 230000000903 blocking effect Effects 0.000 claims description 37
- 239000000919 ceramic Substances 0.000 claims description 29
- 239000000853 adhesive Substances 0.000 claims description 26
- 230000001070 adhesive effect Effects 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 5
- 238000004049 embossing Methods 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 68
- 239000007789 gas Substances 0.000 description 40
- 239000010408 film Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000013022 venting Methods 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140026626A KR101594928B1 (ko) | 2014-03-06 | 2014-03-06 | 기판 처리 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201535498A TW201535498A (zh) | 2015-09-16 |
TWI555076B true TWI555076B (zh) | 2016-10-21 |
Family
ID=54033150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103140558A TWI555076B (zh) | 2014-03-06 | 2014-11-21 | 基板處理設備及方法 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101594928B1 (ko) |
CN (1) | CN104900563A (ko) |
TW (1) | TWI555076B (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102709229B1 (ko) | 2015-12-07 | 2024-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 병합형 커버 링 |
CN106935530B (zh) * | 2015-12-31 | 2020-04-17 | 中微半导体设备(上海)股份有限公司 | 一种等离子体刻蚀光刻胶装置 |
CN113580557A (zh) * | 2021-07-28 | 2021-11-02 | 沛顿科技(深圳)有限公司 | 一种tsv工艺中替代ncf的3d打印方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200805556A (en) * | 2006-03-31 | 2008-01-16 | Tokyo Electron Ltd | Substrate placing stage and substrate processing apparatus |
TW201334062A (zh) * | 2011-11-09 | 2013-08-16 | Tokyo Electron Ltd | 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001525997A (ja) * | 1997-05-20 | 2001-12-11 | 東京エレクトロン株式会社 | 処理装置 |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
JP4951536B2 (ja) * | 2007-03-27 | 2012-06-13 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
JP4858395B2 (ja) * | 2007-10-12 | 2012-01-18 | パナソニック株式会社 | プラズマ処理装置 |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
-
2014
- 2014-03-06 KR KR1020140026626A patent/KR101594928B1/ko active IP Right Grant
- 2014-11-21 TW TW103140558A patent/TWI555076B/zh active
- 2014-11-28 CN CN201410710979.1A patent/CN104900563A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200805556A (en) * | 2006-03-31 | 2008-01-16 | Tokyo Electron Ltd | Substrate placing stage and substrate processing apparatus |
TW201334062A (zh) * | 2011-11-09 | 2013-08-16 | Tokyo Electron Ltd | 基板載置系統、基板處理裝置、靜電夾具及基板冷卻方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201535498A (zh) | 2015-09-16 |
CN104900563A (zh) | 2015-09-09 |
KR101594928B1 (ko) | 2016-02-17 |
KR20150104813A (ko) | 2015-09-16 |
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